JP5044797B2 - Process for producing reaction sintered silicon nitride matrix composite - Google Patents

Description

The present invention relates to a method for producing a reaction-sintered silicon nitride based composite materials, and more particularly, high reliability as a structural member, yet inexpensive raw material is the silicon base of the composite materials nitride fabricated using It relates to a manufacturing method. The present invention as compared with silicon nitride to produce a high performance reaction sintering silicon nitride based composite material produced an inexpensive silicon as a main material, to provide a use as the structural member.

Since silicon nitride (Si ₃ N ₄ ) sintered bodies are excellent in strength and thermal shock resistance, they are being developed as various structural materials such as engine component materials, bearing materials, and tool materials, and are being put to practical use. It has been. In addition, various developments have been made to improve the performance of this silicon nitride sintered body, and high strength and toughness has been obtained.

As an example of development, a method for suppressing the nitriding of zirconia and applying the sintering aid to the surface of zirconia (ZrO ₂ ) and then sintering to effectively develop toughness due to stress-induced transformation has also been developed. (Patent Document 1).

Further, in the prior art document, a development example of a reactive silicon nitride sintered body (Patent Document 2) in which ZrO ₂ is dispersed for a member for a repellent molten metal is shown, but this material has a density of 75-85. It can be inferred that the presence of large pores reduces strength when used as a structural material.

  When silicon nitride powder is used, it is possible to produce a high-performance ceramic material having high strength and high toughness. However, since the price of the raw material powder is high, the price as a member increases. In addition, since the shrinkage during sintering is large, quality control is difficult.

  On the other hand, when silicon powder is used, the raw material cost is low, but since the melting point of silicon and the reaction sintering temperature are close to each other, the nitriding reaction that is an exothermic reaction proceeds, so that the temperature of the silicon powder becomes the melting point. It is necessary to control to be as follows, and a long reaction sintering time is required. In general, coarse silicon particles of 30 microns or more are not nitrided and are present inside the sintered body and impair mechanical properties, so that it is difficult to obtain high strength and high toughness.

  Further, iron oxide is known as an additive that promotes nitridation of silicon (Non-patent Document 1). However, iron oxide reacts with silicon to produce iron silicide, but the compound is difficult to wet with silicon nitride particles, and thus becomes a defect, resulting in a decrease in strength. In addition, if silicon is refined, high strength can be achieved. However, when silicon, which is originally active, is pulverized by a ball mill for a long time, alcohol must be used as a solvent in order to suppress the reaction between silicon and the solvent. I do not get.

  However, the use of the organic solvent is not only expensive, but is not desirable from the viewpoint of reducing the environmental load. On the other hand, when water is used, mixing is performed for a short time, and as a result, the silicon is not refined and remains coarse. Usually, coarse silicon particles of 30 microns or more are not nitrided, exist inside the sintered body, and impair mechanical properties. Therefore, it is difficult to obtain high strength and high toughness.

Japanese Patent Application Laid-Open No. 64-51377 JP 58-213677 A A. J. MOULSON, Review, Reaction-bonded silicon nitride: its formation and properties, JOURNAL OF MATERIALS SCIENCE 14 (1979) pp.1017-1051

Under such circumstances, the present inventors have aimed to develop a new silicon nitride-based composite material that is highly reliable as a structural member and can be manufactured at low cost in view of the above-described conventional technology. As a result of accumulating intensive research, we have clarified additives or conditions to complete nitriding and densification of molded bodies made of coarse silicon as the main raw material in the lowest possible temperature and in the shortest possible time. The inventors have found that a silicon nitride-based composite material produced by adding zirconium oxide has sufficient characteristics as a practical structural member, and has completed the present invention. The present invention aims to provide a manufacturing how the reaction sintering silicon nitride based composite materials of high performance produced an inexpensive silicon as compared to silicon nitride as a main raw material.

The present invention for solving the above-described problems comprises the following technical means.
( 1 ) A raw material containing silicon is used as a starting raw material, and the silicon contains 5-40% of particles having a particle size of 30 microns or larger, and zirconium oxide and spinel as a sintering aid are prescribed. mixed by blending, molding, after the reaction sintering allowed to nitride silicon sintered at a predetermined temperature in nitrogen, the temperature was raised and fired at a predetermined temperature, nitriding the silicon-based composite that Ru densified A method of manufacturing a material ,
The sintering temperature for nitriding is in the range of 1300-1500 ° C, the firing temperature after reaction sintering is in the range of 1650-1950 ° C, 2-20 parts by weight of zirconium oxide, 5-10 parts by weight of spinel Silicon nitride characterized in that, after forming the mixed powder to which each is added, after converting silicon to silicon nitride in an atmosphere containing nitrogen, the temperature is raised and the density is increased to 95% or more (relative density) Manufacturing method of matrix composite material.
( 2 ) Zirconium oxide to be mixed is zirconia or partially stabilized zirconia in which at least 90% is stabilized to tetragonal or cubic by addition of Y, Mg or Ce element, as described in ( 1 ) above A method for producing a silicon nitride-based composite material.
( 3 ) The method for producing a silicon nitride-based composite material according to ( 1 ), wherein the zirconium oxide is partially stabilized by yttrium oxide.
( 4 ) The method for producing a silicon nitride-based composite material according to ( 1 ), wherein zirconium oxide is tetragonal at least 90% of the crystal phase by adding 2-3 mol of yttrium oxide.
( 5 ) The method for producing a silicon nitride-based composite material according to ( 1 ), wherein a raw material in which silicon nitride powder is blended is used as a starting raw material.
( 6 ) The method for producing a silicon nitride-based composite material according to ( 1 ), wherein the silicon powder contains 0.2-5% Fe element.

Next, the present invention will be described in more detail.
The present invention is a method for producing a silicon nitride-based composite material that has been densified after a reactive sintering step of nitriding silicon in nitrogen using a raw material containing silicon, the densified nitriding The silicon-based composite material contains an oxide and / or nitride of Zr in a dispersed state, and the grain boundary phase is an oxide or oxynitride amorphous phase containing at least Al and Si. It is characterized by that.

  Further, the present invention is a method for producing the above silicon nitride-based composite material, wherein a raw material containing silicon is used as a starting material, and zirconium oxide and a sintering aid are mixed and molded by a predetermined blending, and in nitrogen After performing reactive sintering in which silicon is nitrided, the temperature is raised and densification is performed. At this time, the zirconium oxide to be used is tetragonal zirconium oxide in which yttrium oxide is dissolved, thereby controlling the time or temperature required to complete nitriding and the ratio of α and β generated after nitriding. be able to. This α / β ratio affects the second stage sintering.

  In the present invention, the following means are employed. That is, zirconium oxide that has a nitriding promoting effect and forms a weak interface due to the difference between the stress-induced transformation and the thermal expansion coefficient when present in the sintered body, and the silicon oxide component on the silicon nitride surface A sintering aid component that forms a liquid phase is added. As a result, silicon nitride is efficiently generated by the reaction of silicon and nitrogen, and in the subsequent sintering process, the sintering aid can promote densification.

  In addition, zirconium oxide and zirconium nitride dispersed in the grain boundary after sintering effectively toughen to obtain a silicon nitride-based composite material having sufficient characteristics as a practical part even at a density of 95% or more. It becomes possible. In addition, Fe impurities contained in the raw material silicon are dispersed in the grain boundary portion and form a weak interface, similarly to zirconium oxide and zirconium nitride, and thus contribute to toughening.

As a method for producing the silicon nitride-based composite material, silicon powder is used as a main raw material, ZrO ₂ and a sintering aid are mixed and molded by a predetermined composition, reaction sintering is performed in nitrogen, and then the temperature is raised. , Promote densification.

  The silicon powder used as the main raw material in the present invention preferably contains particles having a particle size of 30 microns or more, thereby improving the fluidity of the powder at the time of molding, and more inexpensive silicon. It becomes possible to obtain powder. Moreover, it is desirable that the silicon powder contains 0.2-5% Fe element. As the silicon powder, for example, a low-purity raw material (so-called metallic silicon, purity 99% or less) or a pulverized powder of a low-purity silicon wafer at the time of producing a silicon wafer used for semiconductor applications, so-called # 200 to # A silicon powder equivalent to 600 is exemplified.

As the mixed zirconium oxide powder, for example, a fine powder having a primary particle size of about 100 nm is desirable, but the same effect can be obtained even in a powder having an average particle size of 3 microns. If no powder is used, there is no problem. The same effect can be obtained when ZrO _{2 to be} mixed is stabilized zirconia or partially stabilized zirconia stabilized by an element such as Y, Mg or Ce. Among them, about 3 moles of yttrium oxide is added. It is preferable to use tetragonal zirconia.

  In the case of a thick product, the sintering for nitriding is usually desirably performed within a range of 1350 to 1500 ° C. over a sufficient time. Depending on the wall thickness, nitriding can be performed at 1300 ° C. for about 5 hours. In the case of 1300 ° C. or lower, the in-situ reaction does not end, so in the subsequent sintering process, unreacted silicon melts and volatilizes, causing defects in the sintered body and possibly cracking the sintered body . Moreover, it is desirable to perform the firing after the reactive sintering at about 1650 to 1950 ° C.

In the present invention, as a starting material, silicon nitride powder can be blended in addition to the main materials silicon, ZrO ₂ and the sintering aid, and rapid heat generation accompanying nitriding can be appropriately controlled. As described above, silicon nitride is characterized in that it contains Zr oxide and / or nitride in a dispersed state and the grain boundary phase is an oxide or nitride amorphous phase containing at least Al and Si. A matrix composite is produced.

  In the silicon nitride-based composite material, the dispersed Zr oxide and / or nitride preferably has a particle size of 20 microns or less. The volume fraction of the dispersed Zr oxide and / or nitride preferably does not exceed 20 vol%.

  The silicon nitride-based composite material of the present invention contains a Fe oxide or silicide dispersed in the grain boundary phase, thereby forming a weak interface, which may improve toughness. In particular, since it is difficult to wet with silicon nitride, a large amount causes defects.

A sintered body produced using silicon nitride powder has high strength and excellent reliability, but is expensive. On the other hand, the reaction sintered silicon nitride sintered body has a low raw material cost, but it is difficult to obtain a sintered body having sufficient reliability and strength. In the present invention, when producing a reaction-sintered silicon nitride-based composite material including silicon nitriding process using silicon cheaper than silicon nitride as a main raw material, the nitriding reaction of silicon is performed by adding ZrO _2. As well as promoting, the interface weakens due to the effect of tensile stress due to the difference in thermal expansion coefficient between ZrO ₂ and silicon nitride, and the stress at the crack tip is relaxed, so the strength of the sintered body itself is greatly improved, and the reliability This makes it possible to produce materials. At the same time, by adding Fe ₃ O ₄ , the effect is further increased, and a reaction-sintered silicon nitride-based composite material having excellent reliability can be obtained.

The present invention has the following effects.
(1) The present invention can produce and provide a silicon nitride-based composite material having high reliability as a structural member and sufficient characteristics as a practical structural member at low cost, using silicon as a main raw material. And
(2) The silicon nitride-based composite material produced by the present invention has excellent characteristics that can be suitably used as a structural member having high strength and toughness even when the relative density is about 95%. Yes.
(3) In the present invention, it is possible to produce and provide a high-quality silicon nitride-based composite material having high strength and high toughness with a low reaction sintering time, energy saving, using an inexpensive raw material.
(4) The silicon nitride-based composite material produced in the present invention can provide an inexpensive member as compared with a silicon nitride sintered body produced using a conventional silicon nitride powder as a raw material. It is possible to obtain advantages such as easy quality control.
(5) Since the method of reactive sintering is used, the shrinkage during sintering is small compared to the case where a conventional silicon nitride raw material is used. Yield is improved.
(6) Since coarse silicon particles can be nitrided at a low temperature for a short time, it is possible to use water instead of alcohol as a solvent at the time of mixing, so it is possible to obtain a material with a low environmental load. is there.

  Next, the present invention will be specifically described based on examples, but the present invention is not limited to these examples.

For 1.8 g of high-purity silicon, powders of Al ₂ O ₃ , MgAl ₂ O ₄ , MgO, Y ₂ O ₃ , Fe ₂ O ₃ , m-ZrO ₂ , 3Y-ZrO ₂ , 8Y-ZrO ₂ 0.2 g of each was added, 10 mL of ethanol was added, and ball mill mixing was performed. After mixing and drying, thermogravimetric analysis (TG) was performed in nitrogen to confirm the nitriding behavior of silicon.

The conditions of thermogravimetric analysis were as follows: sample 30 mg, heated to 1400 ° C. at 10 ° C./min, and cooled to room temperature without holding time. In addition, the atmosphere at the time of the test was in N ₂ and kept flowing during the test at a flow rate of 20 ml / min. The weight increase rate after the test is shown in FIG. Obviously, the zirconia added was confirmed to have a large weight increase in any zirconia. When silicon becomes silicon nitride, the reaction is as follows.
3Si + 2N ₂ → Si ₃ N ₄
In this case, the mass increases about 1.67 times. That is, this test result shows that addition of ZrO ₂ promotes nitriding of silicon.

  Table 1 shows the mixing ratio of the raw material powders used. These raw materials are weighed, and 1% ethanol and polyvinyl butyral 1.5 times the total weight of the powder are added, and the mixture is slurried by mixing for about 6 hours with a ball mill. Produced. Next, the granulated powder was put in a mold having an inner size of 20 × 80 mm, pressurized at 8.3 MPa, preformed, put in a nylon bag, and sealed by reducing the pressure inside.

This was pressurized with a CIP apparatus at a pressure of 200 MPa to obtain a molded body. Next, degreasing treatment was performed by heating to 550 ° C. in an N ₂ atmosphere of 0.2 MPa, and reaction sintering was performed by heating to a maximum of 1300 ° C. in an N ₂ atmosphere of 0.93 MPa. Thereafter, the temperature was continuously increased, and main sintering was performed at 1750 ° C. for 4 hours.

FIG. 2 shows X-ray diffraction when the temperature is raised to 1300 ° C. and reaction sintering is performed. FIG. 3 shows the nitriding rate calculated from the weight increase in that case. In the case of the developed material to which ZrO ₂ is added, the nitriding rate is 95% or more for all the samples at this temperature without depending on the added amount of the stabilizer Y ₂ O _3. It was confirmed that the nitriding rate was 60% or less and a large amount of unreacted silicon remained. Moreover, when the reaction sintered body was calcined at 1750 ° C. under these conditions, the developed material obtained a good sintered body in any case, whereas the comparative material was fused with silicon. However, the sintered body could not be produced.

  Table 2 shows the mixing ratio of the raw material powders used. These raw materials are weighed, and 1% ethanol and polyvinyl butyral 1.5 times the total weight of the powder are added, and the mixture is slurried by mixing for about 6 hours with a ball mill. Produced. Next, the granulated powder was put in a mold having an inner size of 20 × 80 mm, pressurized at 8.3 MPa, preformed, put in a nylon bag, and sealed by reducing the pressure inside.

This was pressurized with a CIP apparatus at a pressure of 200 MPa to obtain a molded body. Next, degreasing treatment was performed by heating to 550 ° C. in a N ₂ atmosphere of 0.2 MPa, and reaction sintering was performed by heating to a maximum of 1450 ° C. in a N ₂ atmosphere of 0.93 MPa. Thereafter, the temperature was continuously increased, and main sintering was performed at 1750 ° C. for 4 hours. After processing the obtained sintered body, four-point bending strength was evaluated according to JIS R1601.

FIG. 4 shows the result. In the case of the developed material to which ZrO ₂ was added, all the samples showed a strength of 600 MPa or more, and it was confirmed that the strength was higher than that of the comparative material. The amount of ZrO ₂ is also below 1 vol% in fraction of the sintered body (developing material 11, ZrO ₂ about 0.45vol%), it contributes to higher strength, 20 vol% (the developed material 14, ZrO ₂ shows a toughening behavior up to about 20 vol%.

However, the addition of 20 vol% or more (development material 15, ZrO ₂ approximately 26 vol%) shows a tendency for the strength to decrease. As for strength, the case where the sintering aid is MgAl ₂ O ₄ (spinel) shows a slightly higher tendency than Al ₂ O ₃ , but there is no significant advantage, and in either case, It showed high strength.

  FIG. 5 shows the microstructure of the sintered body. It was confirmed that zirconia does not work as a grain boundary phase component similar to the conventional silicon nitride auxiliary agent but exists in the sintered body in a dispersed state. Moreover, it was confirmed that the silicon nitride particles are columnar as in the case of conventional silicon nitride ceramics. FIG. 6 shows the microstructure observed by TEM. It was confirmed that the zirconium compound was dispersed in the silicon nitride matrix. It was also confirmed that there was no delamination or the like due to the difference in thermal expansion coefficient at the interface.

  Using the composition of the developed material 1 shown in Table 1, weighed these raw materials, added 1% ethanol and polyvinyl butyral 1.5 times the total weight of the powder, and mixed them in a ball mill for about 6 hours to make a slurry. Then, granulated powder was produced using a spray dryer. Similarly, 1% of distilled water 1.5 times the total weight of the powder and polyvinyl alcohol were added, and the mixture was slurried by mixing with a ball mill for about 6 hours, and then granulated powder was produced using a spray dryer. Next, the granulated powder was put in a mold having an inner size of 20 × 80 mm, pressurized at 8.3 MPa, preformed, put in a nylon bag, and sealed by reducing the pressure inside.

This was pressurized with a CIP apparatus at a pressure of 200 MPa to obtain a molded body. Next, degreasing treatment was performed by heating to 550 ° C. in an N ₂ atmosphere of 0.2 MPa, and reaction sintering was performed by heating to a maximum of 1400 ° C. in an N ₂ atmosphere of 0.93 MPa. Thereafter, the temperature was continuously increased, and sintering was performed at 1750 ° C. for 4 hours. After processing the obtained sintered body, four-point bending strength was evaluated according to JIS R1601.

When the difference in crystal phase when mixed with water and when mixed with alcohol is confirmed, when mixed with water, a large amount of ZrO ₂ is generated, whereas when mixed with alcohol,
Although it was confirmed that the amount of ZrN produced was large, in any case, it showed a high strength of about 800 MPa. This is because the stress-induced transformation of ZrO ₂ is not the main factor for toughening, and a weak interface due to thermal expansion difference is formed at the grain boundary with silicon nitride as a matrix, so that cracks progress along the interface. This is thought to be due to toughening.

  Table 3 shows the mixing ratio of the raw material powders used. These raw materials are weighed, and 1% ethanol and polyvinyl butyral 1.5 times the total weight of the powder are added, and the mixture is slurried by mixing for about 6 hours with a ball mill. Produced. Next, the granulated powder was put in a mold having an inner size of 20 × 80 mm, pressurized at 8.3 MPa, preformed, put in a nylon bag, and sealed by reducing the pressure inside.

This was pressurized with a CIP apparatus at a pressure of 200 MPa to obtain a molded body. Next, degreasing treatment was performed by heating to 550 ° C. in a N ₂ atmosphere of 0.2 MPa, and reaction sintering was performed by heating to a maximum of 1450 ° C. in a N ₂ atmosphere of 0.93 MPa. Thereafter, the temperature was continuously increased, and main sintering was performed at 1750 ° C. for 4 hours. After processing the obtained sintered body, four-point bending strength was evaluated according to JIS R1601. In the obtained sintered body, the added Fe ₃ O ₄ is an Fe compound (silicide, FeSi ₂ ), and as shown in FIG. 7, a peeled portion was also confirmed at the interface.

FIG. 8 shows the relationship between the added amount of Fe ₃ O ₄ and the strength. The strength of 700 MPa or higher was exhibited up to 5 wt% of the added amount of Fe ₃ O ₄ , but the strength significantly decreased when the amount exceeded 5 wt%. This is because when the added Fe ₃ O ₄ becomes an Fe compound at the time of sintering, the bond with the matrix interface is weak, and in the case of a small amount, a crack is drawn and contributes to toughening. In this case, it is considered that weak interfaces are bonded to each other, resulting in a large defect. For this reason, it is not desirable to add 5 wt% or more.

As silicon powders having different particle sizes, powders having an average particle size of _{2, 30,} and 80 microns were used, and Al ₂ O ₃ and partially stabilized zirconia 3Y-ZrO ₂ were each added to 84.25 g of each silicon powder. After adding 83 g at a time, adding 1% ethanol and polyvinyl butyral 1.5 times the total weight of the powder and mixing with a ball mill for about 6 hours, the mixture was slurried and then granulated powder was prepared using a spray dryer. . Similarly, a mixed powder obtained by adding 7.83 g of Al ₂ O ₃ and Y ₂ O ₃ to 84.25 g of the powder was also produced in the same manner.

Next, the granulated powder was put in a mold having an inner size of 20 × 80 mm, pressurized at 8.3 MPa, preformed, put in a nylon bag, and sealed by reducing the pressure inside. This was pressurized with a CIP apparatus at a pressure of 200 MPa to obtain a molded body. Next, degreasing treatment was performed by heating to 550 ° C. in an N ₂ atmosphere of 0.2 MPa, and reaction sintering was performed by heating to a maximum of 1300 ° C. in an N ₂ atmosphere of 0.93 MPa.

Comparing the nitridation rate of silicon after reaction sintering, when 3Y-ZrO ₂ was added, the nitridation rate of 90% or more was exhibited under the present reaction sintering conditions when silicon powder of any particle size was used. On the other hand, when 3Y—ZrO ₂ is not added, the nitriding rate decreases as the silicon particle size increases, and when an 80 micron starting material is used, only about 30% nitriding rate is obtained. I couldn't.

FIG. 9 shows the results of investigating the influence of Y amount-difference ZrO ₂ addition on silicon nitridation. The weight increase behavior under the condition of keeping at 1300 ° C. in a nitrogen stream was measured by a thermobalance. From the figure, it can be seen that when only silicon is nitrided, nitriding proceeds at once, whereas in the samples coexisting with zirconia, the increase in weight accompanying nitriding is slow. This indicates the possibility of nitriding in a short time by increasing the speed of the reaction sintering process. It was also found that when zirconia stabilized with 3 mol of yttria was used, the weight increase associated with nitriding increased.

  FIG. 10 shows the results of forming pellets made of Si + auxiliary, raising the temperature to 1300 ° C., immediately taking out the temperature after cooling and furnace cooling, and measuring the weight. Among the various combinations, it has been found that the auxiliary agent containing zirconia including the simultaneous addition with spinel is effective in promoting nitriding even at 1300 ° C. In particular, spinel is known to form a liquid phase at a low temperature, and the combination of zirconia and spinel is effective when considering nitriding and lowering the second-stage densification process.

FIG. 11 shows the result of investigating the produced phase after nitriding of the Y-difference ZrO ₂ -added Si powder using XRD. The processing conditions were planetary mill 500 rpm 1 h pulverized powder, ZrO ₂ addition amount: 5 wt%, nitriding: 1450 ° C. × 4 H. α ratio was calculated from α (102), α (210), β (101), β (210) peak intensity. It was found that nitriding was completed in all samples, and the α rate generated by nitriding silicon varied depending on the composition of zirconia. This is presumably because dissolution and reprecipitation behavior, which is one of the sintering mechanisms of silicon nitride, occurs simultaneously with nitriding.

That is, since most of the silicon after nitriding is usually generated through a gas phase reaction, the α phase is the main component, but even in this reaction sintering process, a small amount of SiO ₂ is the main component. A liquid phase is formed. The mechanism in which α-phase silicon nitride particles are dissolved in the liquid phase and re-precipitated as β-phase is also in progress. In addition, yttrium oxide added to 3Y—ZrO ₂ used in this test has an effect of accelerating the change from α phase to β phase in this dissolution and re-precipitation. When there are many, it is thought that many (beta) phases have arisen.

FIG. 12 shows the results of measuring the weight change after nitriding at 1300 ° C. and 1450 ° C. in order to clarify the effects of temperature and time on nitriding. From the figure, it was found that in the ZrO ₂ + MgAl ₂ O ₄ added system, nitriding was almost completed when the temperature reached 1300 ° C. This result is consistent with the result obtained using the previous thermobalance. From the test results described above, the effect of zirconia addition in the nitriding process was estimated. With only the silicon coarse powder, the reaction rate is high, the surface is nitrided for a short time, and then becomes rate limiting. In addition, when using fine powder, since heat_generation | fever accompanies, sound control becomes difficult.

On the other hand, in the system to which zirconia is added, the following reaction occurs stepwise, and nitriding proceeds with a slow reaction. As a result, the rate of temperature increase can be increased, leading to a reduction in nitriding time.
0.5N ₂ [g] + ZrO ₂ [sl] = O ₂ [g] + ZrN [sl]
2SiO ₂ [sl] + ZrN [sl] = 0.5N ₂ [g] + 2SiO [g] + ZrO ₂ [sl]
2N ₂ [g] + 3SiO [g] = 1.5O ₂ [g] + Si ₃ N ₄ [s]

  Table 4 shows the mixing ratio of the raw material powders used in this example. Weigh these ingredients, add 1% ethanol and polyvinyl butyral 1.5 times the total weight of the powder, mix with a ball mill for about 6 hours, and then slurry to produce granulated powder using a spray dryer. did. Next, the granulated powder was put in a mold having an inner dimension of 45 × 45 mm, pressurized at 2 MPa, preformed, put in a nylon bag, and sealed by reducing the pressure inside.

This was pressurized with a CIP device at a pressure of 200 MPa to obtain a molded body. Next, degreasing treatment was performed by heating to 550 ° C. in a 0.2 MPa N ₂ atmosphere, and reaction sintering was performed by heating to a maximum of 1450 ° C. in a 0.1 MPa N ₂ atmosphere. Thereafter, the temperature was continuously increased, and main sintering was performed at 1750 ° C. for 8 hours in 0.9 MPa of nitrogen.

The density, open porosity and the like of the obtained sintered body were measured by the Archimedes method. Further, the four-point bending strength was evaluated according to JIS R1601 after processing. Moreover, the plasma resistance was evaluated by a plasma etching apparatus using CF ₄ gas. FIG. 13 shows the density and open porosity of the sintered body. When ZrO ₂ was not added, none of the samples had a low density and the open porosity was large and not densified. On the other hand, when ZrO ₂ was added, a dense body with a high density and a small open porosity could be obtained.

FIG. 14 shows the relationship between the Z value and strength of SiAlON. It was confirmed that the sample to which ZrO ₂ was added had clearly higher strength than the sample without addition. FIG. 15 shows an SEM image of the sample evaluated for plasma resistance. In contrast to conventional silicon nitride ceramics, the particles themselves are corroded by plasma. In the case of SiAlON to which ZrO ₂ is added, no corrosion of the particles or the like is confirmed, and the same characteristics as conventional SiAlON ceramics are observed. Was.

As described above in detail, the present invention according to the manufacturing method of reaction sintering silicon nitride based composite materials, the present invention, at a low cost, highly reliable as a structural member, silicon nitride based composite Materials can be manufactured and provided. Reaction sintering silicon nitride-based composite material produced in the present invention can be manufactured using inexpensive raw materials, the present invention has a high strength and high toughness, it is suitably used as a structural member It is possible to provide a high-performance ceramic material and a high-performance ceramic having high corrosion resistance.

The nitriding rate of the powder after TG is shown. The X-ray diffraction of 1300 degreeC reaction sintered compact is shown. The nitriding rate of silicon when the temperature is raised to 1300 ° C. is shown. The 4 point | piece bending strength of a sintered compact is shown. It shows the etched surface of the sintered body of _{(3Y-ZrO 2, MgAl 2} O 4 added). It shows sintered TEM images of _{(3Y-ZrO 2, MgAl 2} O 4 added). The relationship between the added amount of Fe ₃ O ₄ and the strength is shown. The Fe compound particle | grains inside a sintered compact are shown. It shows the results of Y weight difference ZrO ₂ addition was investigated the effect on nitridation of silicon. The result of molding and pelletizing Si + auxiliaries, raising the temperature to 1300 ° C., immediately taking down the temperature and cooling the furnace, and measuring the weight. Y amount difference ZrO ₂ added Si powder production phase after the nitriding are shown the results of investigation using XRD. In order to clarify the influence of temperature and time on nitriding, the results of measuring the weight change after nitriding at 1300 and 1450 ° C. are shown. The density and open porosity when the developed material and the comparative material are sintered at the same temperature are shown. The four-point bending strength when the developed material and the comparative material are sintered at the same temperature is shown. The SEM photograph of the sample surface after plasma etching is shown.

Claims (6)

A raw material containing silicon is used as a starting raw material, and the silicon contains 5-40% of particles having a particle size of 30 microns or larger, and zirconium oxide and spinel as a sintering aid are mixed by a predetermined composition. , the production of molded, after the reaction sintering allowed to nitride silicon sintered at a predetermined temperature in nitrogen, the temperature was raised and fired at a predetermined temperature, nitriding the silicon-based composite material Ru densified A method ,
The sintering temperature for nitriding is in the range of 1300-1500 ° C, the firing temperature after reaction sintering is in the range of 1650-1950 ° C, 2-20 parts by weight of zirconium oxide, 5-10 parts by weight of spinel Silicon nitride characterized in that, after forming the mixed powder to which each is added, after converting silicon to silicon nitride in an atmosphere containing nitrogen, the temperature is raised and the density is increased to 95% or more (relative density) Manufacturing method of matrix composite material. 2. The silicon nitride group composite according to claim 1 , wherein the zirconium oxide to be mixed is zirconia or partially stabilized zirconia in which at least 90% is stabilized to tetragonal or cubic by addition of Y, Mg or Ce element. Material manufacturing method. The method for producing a silicon nitride-based composite material according to claim 1 , wherein the zirconium oxide is partially stabilized by yttrium oxide. The method for producing a silicon nitride-based composite material according to claim 1 , wherein at least 90% of the crystal phase is tetragonal by adding 2-3 mol of yttrium oxide. As a starting material, using a raw material obtained by mixing a silicon nitride powder, method for producing a silicon nitride-based composite material according to claim 1. The silicon powder, containing 0.2-5% of Fe element, the manufacturing method of the silicon nitride-based composite material according to claim 1.