JP4954434B2 - Manufacturing equipment - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a manufacturing apparatus used for film formation of a material that can be formed by vapor deposition (hereinafter referred to as vapor deposition material) and a method for manufacturing a light-emitting device typified by an EL element. In particular, the present invention is an effective technique for manufacturing a light-emitting device using an organic material as an evaporation material. Note that a light-emitting device in this specification refers to an image display device, a light-emitting device, or a light source (including a lighting device). Also, a module in which a connector such as an FPC (Flexible printed circuit) or TAB (Tape Automated Bonding) tape or TCP (Tape Carrier Package) is attached to the light emitting device, or a module in which a printed wiring board is provided at the end of the TAB tape or TCP In addition, a module in which an IC (integrated circuit) is directly mounted on a light emitting element by a COG (Chip On Glass) method is also included in the light emitting device.
[0002]
[Prior art]
In recent years, research on a light-emitting device having an EL element as a self-luminous element has been actively conducted, and in particular, a light-emitting device using an organic material as an EL material has attracted attention. This light emitting device is also called an organic EL display (OELD) or an organic light emitting diode (OLED).
[0003]
Note that the EL element includes a layer containing an organic compound (hereinafter, referred to as an EL layer) from which luminescence generated by applying an electric field is obtained, an anode, and a cathode. Luminescence in an organic compound includes light emission (fluorescence) when returning from the singlet excited state to the ground state and light emission (phosphorescence) when returning from the triplet excited state to the ground state. The light-emitting device manufactured by the film formation method can be applied to either light emission.
[0004]
Unlike the liquid crystal display device, the light-emitting device is a self-luminous type and has a feature that there is no problem of viewing angle. That is, as a display used outdoors, it is more suitable than a liquid crystal display, and use in various forms has been proposed.
[0005]
An EL element has a structure in which an EL layer is sandwiched between a pair of electrodes, but the EL layer usually has a laminated structure. Typically, a laminated structure of “hole transport layer / light emitting layer / electron transport layer” can be given. This structure has very high luminous efficiency, and most of the light emitting devices that are currently under research and development employ this structure.
[0006]
In addition, a hole injection layer / a hole transport layer / a light emitting layer / an electron transport layer, or a hole injection layer / a hole transport layer / a light emitting layer / an electron transport layer / an electron injection layer are sequentially laminated on the anode. Good structure. You may dope a fluorescent pigment | dye etc. with respect to a light emitting layer. These layers may all be formed using a low molecular weight material, or may be formed using a high molecular weight material.
[0007]
The EL material for forming the EL layer is roughly classified into a low molecular (monomer) material and a high molecular (polymer) material. Of these, the low molecular material is mainly formed by vapor deposition.
[0008]
The EL material is very easily deteriorated, and is easily oxidized and deteriorated in the presence of oxygen or water. Therefore, a photolithography process cannot be performed after the film formation, and in order to form a pattern, it is necessary to separate the film at the same time as the film formation with a mask having an opening (hereinafter referred to as an evaporation mask). Therefore, most of the sublimated organic EL material is attached to the inner wall of the film forming chamber or the deposition shield (a protective plate for preventing the deposition material from adhering to the inner wall of the film forming chamber). Therefore, it is necessary to periodically perform maintenance such as cleaning to remove deposits on the inner walls of the deposition chamber and the deposition shield, and during the maintenance, the vapor deposition system temporarily stops the production line for mass production. It is inevitable to do.
[0009]
Further, in the conventional vapor deposition apparatus, in order to increase the uniformity of the film thickness, the distance between the substrate and the vapor deposition source is widened, and the apparatus itself is enlarged. Further, as shown in FIG. 22, the conventional vapor deposition apparatus has a structure in which a uniform film is obtained by further rotating the substrate with a distance of 1 m or more between the substrate and the vapor deposition source. Furthermore, since the vapor deposition apparatus has a structure in which the substrate is rotated, there is a limit to the vapor deposition apparatus intended for a large area substrate. Further, since the distance between the substrate and the vapor deposition source is wide, the film formation rate is slow, and the time required for exhausting the film formation chamber is long, resulting in a decrease in throughput.
[0010]
In addition, the conventional vapor deposition apparatus has a very low utilization efficiency of expensive EL materials of about 1% or less, and the manufacturing cost of the light emitting device is very expensive.
[0011]
[Problems to be solved by the invention]
The EL material is very expensive, and its gram unit price is several steps higher than that of gold, so that it is desired to use it as efficiently as possible. However, the use efficiency of expensive EL material is low in the conventional vapor deposition apparatus.
[0012]
An object of the present invention is to provide a vapor deposition apparatus and a manufacturing apparatus that improve the utilization efficiency of an EL material, are excellent in uniformity, and have an excellent throughput.
[0013]
Since vapor deposition is performed in vacuum, it takes a long time to evacuate the film forming chamber, or the time required for each process varies from processing chamber to processing chamber, so it is difficult to design as an automated process. There is a limit to improving productivity. In particular, since it takes a long time to deposit and laminate a layer containing an organic compound, there is a limit to shortening the processing time per substrate. Therefore, the present invention also has an object to shorten the processing time per substrate.
[0014]
Another object of the present invention is to provide a manufacturing apparatus capable of maintaining the film forming chamber without temporarily stopping the manufacturing line.
[0015]
The present invention is also applicable to a large area substrate having a substrate size of 320 mm × 400 mm, 370 mm × 470 mm, 550 mm × 650 mm, 600 mm × 720 mm, 680 mm × 880 mm, 1000 mm × 1200 mm, 1100 mm × 1250 mm, 1150 mm × 1300 mm, for example. Thus, a method for efficiently depositing an EL material is provided.
[0016]
Furthermore, the present invention also provides a manufacturing system that can avoid contamination of the EL material with impurities.
[0017]
[Means for Solving the Problems]
The present invention provides a multi-chamber manufacturing apparatus including a plurality of film formation chambers, wherein a first film formation chamber for vapor deposition on a first substrate and a second film formation chamber for vapor deposition on a second substrate are provided. Each of the film formation chambers is characterized in that a plurality of organic compound layers are stacked in parallel (parallel) to shorten the processing time per substrate. That is, after carrying the first substrate from the transfer chamber into the first film formation chamber and then performing vapor deposition on the first substrate, the second substrate is transferred from the transfer chamber to the second film formation chamber. It carries in and vapor-deposits on a 2nd board | substrate. In FIG. 1, four film formation chambers are provided in the transfer chamber 102, and therefore, four substrates are respectively attached as shown in FIG. 6A showing an example of a sequence from substrate carry-in to substrate carry-out. It is possible to carry into the film formation chamber and perform the vapor deposition in parallel sequentially.
[0018]
In the present invention, it is assumed that at least a plurality of vapor deposition chambers and heating chambers are provided in order to adjust the tact during mass production, and that other chambers having a relatively short processing time may be provided. The present invention enables efficient mass production.
[0019]
The configuration 1 of the invention disclosed in this specification is:
A manufacturing apparatus having a load chamber, a transfer chamber connected to the load chamber, and a plurality of film forming chambers connected to the transfer chamber,
The plurality of film formation chambers are connected to an evacuation chamber for evacuating the film formation chamber, and have an alignment unit that aligns the mask and the substrate, a vapor deposition source, and a unit that heats the vapor deposition source. And
Among the plurality of film forming chambers, at least two film forming chambers perform vapor deposition on the substrates carried into the respective film forming chambers in parallel.
[0020]
In addition to a film formation chamber in a layer containing an organic compound, a plurality of film formation chambers, sealing chambers, and pretreatment chambers for forming an electrode (cathode or anode) formed thereon and a protective film are provided in the same manner. The configuration 2 of the invention disclosed in this specification may be formed in parallel.
A manufacturing apparatus having a load chamber, a transfer chamber connected to the load chamber, a plurality of film forming chambers connected to the transfer chamber, and a sealing chamber,
The plurality of film formation chambers are connected to an evacuation chamber for evacuating the film formation chamber, and have an alignment unit that aligns the mask and the substrate, a vapor deposition source, and a unit that heats the vapor deposition source. And
Among the plurality of film forming chambers, at least two film forming chambers perform vapor deposition on the substrates carried into the respective film forming chambers in parallel,
The manufacturing apparatus is characterized in that a plurality of the sealing chambers are provided, and the substrate is sorted and sealed in one of the plurality of sealing chambers.
[0021]
Further, according to the present invention, although the number of processed substrates is reduced, for example, as shown in FIG. 6B showing an example of a sequence from substrate loading to substrate unloading, manufacturing is performed even while the fourth film forming chamber is being maintained. Vapor deposition can be performed sequentially in the first to third film forming chambers without temporarily stopping the line. The configuration 3 of the invention disclosed in this specification is:
A manufacturing apparatus having a load chamber, a transfer chamber connected to the load chamber, and a plurality of film forming chambers connected to the transfer chamber,
The plurality of film formation chambers are connected to an evacuation chamber for evacuating the film formation chamber, and have an alignment unit that aligns the mask and the substrate, a vapor deposition source, and a unit that heats the vapor deposition source. And
Among the plurality of film forming chambers, at least two film forming chambers perform vapor deposition on the substrates carried into the respective film forming chambers in parallel, and at least one film forming chamber cleans the film forming chamber. Is a manufacturing apparatus.
[0022]
In the case of forming a monochromatic light emitting device, a hole transport layer (referred to as HTL), light emission in the same film formation chamber as shown in FIG. 2A showing the sequence from substrate loading to substrate unloading. When a layer and an electron transport layer (referred to as ETL) are continuously stacked, throughput is improved. When a hole transport layer, a light-emitting layer, and an electron transport layer are continuously stacked in the same film formation chamber, a deposition source holder (deposition that moves in the X or Y direction) is provided in one film formation chamber as shown in FIG. A plurality of source holders may be provided. According to the vapor deposition apparatus of FIG. 9, the utilization efficiency of the vapor deposition material is improved.
[0023]
Each of the above structures is characterized in that vapor deposition of a layer containing the same organic compound is performed in parallel in at least two of the plurality of film forming chambers.
[0024]
Further, as shown in FIG. 6A as an example of a sequence from substrate loading to substrate unloading, the route for loading the substrate is divided into the same number of routes as the number of film forming chambers arranged in the transfer chamber. Efficient and sequential film formation is performed. Note that an example of a path from loading and unloading of one substrate is simply indicated by an arrow in FIG. The configuration 4 disclosed in this specification is:
A manufacturing apparatus having a load chamber, a transfer chamber connected to the load chamber, and a plurality of film forming chambers connected to the transfer chamber,
The plurality of film formation chambers are connected to an evacuation chamber for evacuating the film formation chamber, and have an alignment unit that aligns the mask and the substrate, a vapor deposition source, and a unit that heats the vapor deposition source. And
The plurality of substrates to be loaded into the load chamber are distributed and loaded into one of the plurality of film forming chambers in the transfer chamber, and each of the substrates is connected to any one of the same number of different paths as the number of the film forming chambers. It is the manufacturing apparatus characterized by being processed by Kana.
[0025]
In the case of forming a full-color light-emitting device, it is preferable that a hole transport layer, a light-emitting layer, and an electron transport layer are successively stacked in the same film formation chamber as illustrated in FIG. In the case where a hole transport layer, a light emitting layer, and an electron transport layer are continuously stacked in the same film formation chamber, a film formation apparatus as shown in FIG. 9, that is, an evaporation source holder (X direction or A vapor deposition apparatus provided with a plurality of at least three or more vapor deposition source holders moving in the Y direction may be used. In addition, as shown in FIG. 4 showing a sequence from substrate loading to substrate unloading, three different film forming chambers (a film forming chamber for a red light emitting element, a film forming chamber for a blue light emitting element, and a structure for a green light emitting element). All organic layers required in the (film chamber), for example, a hole transport layer, a light-emitting layer, and an electron transport layer may be continuously laminated. For example, a hole transport layer that becomes a red light-emitting element in the first chamber, a light-emitting layer, and an electron transport layer are selectively stacked with an evaporation mask (R), and hole transport that becomes a blue light-emitting element in the second chamber. A layer, a light-emitting layer, and an electron transport layer are selectively stacked with a vapor deposition mask (B), and a hole transport layer, a light-emitting layer, and an electron transport layer that serve as a green light-emitting element in the third chamber are vapor-deposited mask (G). A full color display is realized by selectively laminating with. In FIG. 4, mask alignment is performed before vapor deposition, and a film is formed only in a predetermined region.
[0026]
In addition, when a hole transport layer, a light emitting layer, and an electron transport layer are stacked in one chamber, in order to obtain a full color, for example, a material (hole transport layer or layer) that is optimal for a certain color (R, G, or B) is used. An organic material to be an electron transport layer) can be appropriately selected. Further, it is a feature of the present invention that the film thickness can be changed according to the color. Therefore, the R hole transport layer, light emitting layer, electron transport layer, G hole transport layer, light emitting layer, electron transport layer, and B hole transport layer, light emitting layer, electron transport layer All nine layers can be made of different materials. In addition, it is good also considering the organic material used as a positive hole transport layer and an electron carrying layer as a common material.
[0027]
In addition, when the R, G, and B hole transport layers, the light emitting layer, and the electron transport layer are stacked in three different film formation chambers, an example of a route of one substrate is simply indicated by an arrow in FIG. For example, a first substrate is carried into a first film formation chamber, a layer containing a red light emitting organic compound is stacked, and then the substrate is carried out, and then carried into a second film formation chamber to emit green light. The second substrate is carried into the first deposition chamber while the layer containing the organic compound is stacked, and the layer containing the red light emitting organic compound is stacked, and finally the first substrate is stacked. The substrate is carried into the third deposition chamber, and the second substrate is carried into the second deposition chamber while the layers containing the blue light-emitting organic compound are stacked, and then the third substrate is moved to the second deposition chamber. It may be carried into one film forming chamber and sequentially stacked.
[0028]
Further, the present invention is not limited to a configuration in which a hole transport layer, a light emitting layer, and an electron transport layer are continuously stacked in the same chamber, and the hole transport layer, the light emitting layer, and the electron transport are connected in a plurality of connected chambers. You may laminate | stack a layer. For example, a hole transport layer that becomes a green light emitting element is formed in a first chamber, a light emitting layer that becomes a green light emitting element is formed in a second chamber, and an electron transport that becomes a green light emitting element is formed in a third chamber. A layer containing a green light-emitting organic compound may be stacked to form a layer.
[0029]
In the above description, as a representative example, an example in which three layers of a hole transport layer, a light-emitting layer, and an electron transport layer are stacked as a layer containing an organic compound disposed between a cathode and an anode is shown. The hole injection layer / hole transport layer / light emitting layer / electron transport layer, or hole injection layer / hole transport layer / light emitting layer / electron transport layer / electron injection layer are laminated in this order on the anode. A structure, a two-layer structure, or a single-layer structure may be used. You may dope a fluorescent pigment | dye etc. with respect to a light emitting layer. Further, examples of the light emitting layer include a light emitting layer having a hole transporting property and a light emitting layer having an electron transporting property. These layers may all be formed using a low molecular material, and one or several of them may be formed using a polymer material. Note that in this specification, all layers provided between a cathode and an anode are collectively referred to as a layer containing an organic compound (EL layer). Therefore, the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer, and the electron injection layer are all included in the EL layer. The layer containing an organic compound (EL layer) may also contain an inorganic material such as silicon.
[0030]
Note that the light-emitting element (EL element) includes a layer containing an organic compound (hereinafter, referred to as an EL layer) from which luminescence generated by applying an electric field is obtained, an anode, and a cathode. Luminescence in an organic compound includes light emission (fluorescence) when returning from a singlet excited state to a ground state and light emission (phosphorescence) when returning from a triplet excited state to a ground state, which are produced according to the present invention. The light emitting device can be applied to either light emission.
[0031]
In the light emitting device of the present invention, the screen display driving method is not particularly limited. For example, a dot sequential driving method, a line sequential driving method, a surface sequential driving method, or the like may be used. Typically, a line sequential driving method is used, and a time-division gray scale driving method or an area gray scale driving method may be used as appropriate. The video signal input to the source line of the light-emitting device may be an analog signal or a digital signal, and a drive circuit or the like may be designed in accordance with the video signal as appropriate.
[0032]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below.
[0033]
(Embodiment 1)
Here, FIG. 1 shows an example of a multi-chamber manufacturing apparatus in which the production from the first electrode to sealing is fully automated.
[0034]
FIG. 1 shows gates 100a to 100s, an extraction chamber 119, transfer chambers 104a, 108, 114, and 118, delivery chambers 105 and 107, a preparation chamber 101, a first film formation chamber 106A, and a second film formation. Chamber 106B, third film forming chamber 106C, fourth film forming chamber 106D, other film forming chambers 109a, 109b, 113a, 113b, processing chambers 120a, 120b, and setting chambers 126A, 126B for setting the evaporation source. 126C, 126D, pretreatment chambers 103a, 103b, first sealing chamber 116a, second sealing chamber 116b, first stock chamber 130a, second stock chamber 130b, cassette chambers 120a, 120b, tray This is a multi-chamber manufacturing apparatus having a mounting stage 121 and a cleaning chamber 122.
[0035]
Hereinafter, a procedure for manufacturing a light-emitting device by loading a substrate provided with a thin film transistor, an anode (first electrode), and an insulator covering an end of the anode in advance into the manufacturing apparatus shown in FIG.
[0036]
First, the substrate is set in the cassette chamber 120a or the cassette chamber 120b. When the substrate is a large substrate (for example, 300 mm × 360 mm), it is set in the cassette chamber 120a or 120b. When the substrate is a normal substrate (for example, 127 mm × 127 mm), it is transported to the tray mounting stage 121 and the tray (for example, 300 mm A plurality of substrates are set to × 360 mm).
[0037]
Next, a substrate provided with a plurality of thin film transistors and an anode and an insulator covering the end of the anode is transferred to the transfer chamber 118 and further transferred to the cleaning chamber 122, and impurities (such as fine particles) on the substrate surface are removed with the solution. Remove. When cleaning is performed in the cleaning chamber 122, the substrate is set with the film formation surface facing downward under atmospheric pressure.
[0038]
Before forming a film containing an organic compound, annealing for deaeration is preferably performed in vacuum in order to remove moisture and other gases contained in the substrate, and is connected to the transfer chamber 118. Then, it may be transferred to the pretreatment chambers 103a and 103b and annealed there. In addition, when it is desired to remove a film containing an organic compound formed in an unnecessary place, the film may be transferred to the pretreatment chambers 103a and 103b and the stack of organic compound films may be selectively removed. The pretreatment chambers 103a and 103b have plasma generating means, and perform dry etching by exciting one or more gases selected from Ar, H, F, and O to generate plasma. Here, an example is shown in which two pretreatment chambers 103a and 103b are provided so that processing can be performed on two substrates substantially in parallel.
[0039]
Next, the substrate is transferred from the transfer chamber 118 provided with the substrate transfer mechanism to the preparation chamber 101. In the manufacturing apparatus of this embodiment, the preparation chamber 101 is provided with a substrate reversing mechanism, and the substrate can be reversed appropriately. The charging chamber 101 is connected to a vacuum evacuation treatment chamber, and after evacuating, it is preferable to introduce an inert gas to an atmospheric pressure.
[0040]
Next, the material is transferred to a transfer chamber 102 connected to the preparation chamber 101. It is preferable to maintain a vacuum by evacuating in advance so that moisture and oxygen do not exist in the transfer chamber 102 as much as possible.
[0041]
The vacuum evacuation chamber is provided with a magnetic levitation turbo molecular pump, a cryopump, or a dry pump. As a result, the ultimate vacuum of the transfer chamber connected to the preparation chamber is reduced to 10 ^-Five -10 ^-6 Pa can be set, and the back diffusion of impurities from the pump side and the exhaust system can be controlled. In order to prevent impurities from being introduced into the apparatus, an inert gas such as nitrogen or a rare gas is used as the introduced gas. These gases introduced into the apparatus are those purified by a gas purifier before being introduced into the apparatus. Therefore, it is necessary to provide a gas purifier so that the gas is introduced into the vapor deposition apparatus after being highly purified. Thereby, oxygen, water, and other impurities contained in the gas can be removed in advance, so that these impurities can be prevented from being introduced into the apparatus.
[0042]
Next, the substrate is transferred from the transfer chamber 102 to the first to fourth film formation chambers 106A to 106D. And the organic compound layer which consists of a low molecule used as a positive hole injection layer, a positive hole transport layer, and a light emitting layer is formed.
[0043]
An organic compound layer that emits light of a single color (specifically, white) or full color (specifically, red, green, and blue) can be formed as the entire light-emitting element, but here, it emits white light. An example in which an organic compound layer is simultaneously formed in each of the film formation chambers 106A, 106B, 106C, and 106D (film formation processing is performed substantially in parallel) will be described.
[0044]
The organic compound layer that emits white light is a three-wavelength type containing three primary colors of red, green, and blue, and blue / yellow or blue-green / orange when the light-emitting layers having different emission colors are stacked. Although broadly classified into two-wavelength types using the complementary color relationship, an example of obtaining a white light emitting element using these three-wavelength types will be described here.
[0045]
First, the film forming chambers 106A, 106B, 106C, and 106D will be described. In each film forming chamber 106A, 106B, 106C, 106D, a movable evaporation source holder is installed. A plurality of vapor deposition source holders are prepared, aromatic diamine (TPD) that forms a white light emitting layer in the first vapor deposition source holder, p-EtTAZ that forms a white light emitting layer in the second vapor deposition source holder, Alq for forming a white light emitting layer in the third vapor deposition source holder _Three In the fourth vapor deposition source holder, Alq forms a white light emitting layer. _Three EL material added with NileRed, a red luminescent dye, and Alq for the fifth evaporation source holder _Three Is placed in each film forming chamber in this state.
[0046]
The EL material is preferably installed in these film formation chambers by using the following manufacturing system. That is, it is preferable to form a film using a container (typically a crucible) in which an EL material is stored in advance by a material manufacturer. Further, it is preferable that the installation is performed without touching the atmosphere. When the material is transferred from the material manufacturer, the crucible is preferably introduced into the film formation chamber while being sealed in the second container. Desirably, the installation chambers 126A, 126B, 126C, and 126D having vacuum evacuation means connected to the respective film formation chambers 106A, 106B, 106C, and 106D are set to a vacuum or an inert gas atmosphere, and the crucible from the second container is set therein. And place a crucible in the film formation chamber. By doing so, the crucible and the EL material accommodated in the crucible can be prevented from being contaminated. Note that a metal mask can be stocked in the installation chambers 126A, 126B, 126C, and 126D.
[0047]
Next, the film forming process will be described. In the film formation chamber 106A, a mask is transferred and installed from the installation chamber as necessary. Thereafter, the first to fifth vapor deposition source holders start moving in order, and vapor deposition is performed on the substrate. Specifically, TPD is sublimated from the first vapor deposition source holder by heating and vapor deposited on the entire surface of the substrate. Thereafter, p-EtTAZ is sublimated from the second vapor deposition source holder, and Alq from the third vapor deposition source holder. _Three Is sublimated and Alq is removed from the fourth evaporation source holder. _Three : NileRed is sublimated, Alq from the fifth evaporation source holder _Three Is sublimated and deposited on the entire surface of the substrate.
[0048]
When using the vapor deposition method, for example, the degree of vacuum is 5 × 10. ^-3 Torr (0.665 Pa) or less, preferably 10 ^-Four -10 ^-6 Vapor deposition is preferably performed in a film formation chamber evacuated to Pa.
[0049]
Note that the evaporation source holder in which each EL material is installed is provided in each film formation chamber, and vapor deposition is similarly performed in the film formation chambers 106B to 106D. That is, the same film forming process can be performed on the four substrates substantially in parallel. FIG. 7 simply shows a path in which two of the four substrates are processed. Therefore, even if a certain film formation chamber performs maintenance or cleaning, film formation processing can be performed in the remaining film formation chambers, and the film formation tact time can be improved, and thus the throughput of the light emitting device can be improved.
[0050]
Next, after the substrate is transferred from the transfer chamber 102 to the delivery chamber 105, the substrate is further transferred from the transfer chamber 105 to the transfer chamber 104a without being exposed to the atmosphere.
[0051]
Next, the substrate is transferred to the film formation chamber 109a or the film formation chamber 109b by a transfer mechanism installed in the transfer chamber 104a to form a cathode. This cathode is a very thin metal film (an alloy such as MgAg, MgIn, AlLi, CaN, or the like, or an element belonging to Group 1 or 2 of the periodic table and co-deposited with aluminum formed by vapor deposition using resistance heating. Cathode (lower layer) formed by a sputtering method, a transparent conductive film (ITO (indium tin oxide alloy), indium zinc oxide alloy (In ₂ O _Three (ZnO), zinc oxide (ZnO), or the like) and a laminated film. Therefore, it is preferable to arrange a film forming chamber for forming a thin metal film in this manufacturing apparatus.
[0052]
Through the above steps, the light-emitting element having the stacked structure illustrated in FIGS. 17A and 17B is formed.
[0053]
Next, the protective film made of a silicon nitride film or a silicon nitride oxide film is formed by being transferred from the transfer chamber 104a to the film formation chambers 113a and 113b without being exposed to the air. Here, in the film formation chambers 113a and 113b, a target made of silicon, a target made of silicon oxide, or a target made of silicon nitride is provided. For example, a silicon nitride film can be formed by using a target made of silicon and setting a film formation chamber atmosphere to a nitrogen atmosphere or an atmosphere containing nitrogen and argon. FIG. 1 shows an example in which two film formation chambers 113a and 113b are provided so that a protective film can be formed on two substrates substantially in parallel.
[0054]
Next, the substrate over which the light-emitting element is formed is transferred from the transfer chamber 104a to the delivery chamber 107 without being exposed to the atmosphere, and further transferred from the delivery chamber 107 to the transfer chamber 114. Next, the substrate over which the light-emitting element is formed is transferred from the transfer chamber 114 to the first sealing chamber 116a or the second sealing chamber 116b. Note that in the first sealing chamber 116a and the second sealing chamber 116b, a sealant is formed for later bonding to the substrate or sealing. FIG. 1 shows an example in which two sealing chambers 116a and 116b are provided so that the bonding process can be performed on two substrates substantially in parallel.
[0055]
The sealing substrate is prepared from the outside in the first stock chamber 130a and the second stock chamber 130b. In order to remove impurities such as moisture, it is preferable to perform annealing in advance in vacuum, for example, annealing in the first stock chamber 130a and the second stock chamber 130b. In the case of forming a sealing material to be bonded to a substrate provided with a light emitting element on the sealing substrate, the sealing material was formed by forming the sealing material in the first stock chamber 130a and the second stock chamber 130b. The sealing substrate is transferred to the first sealing chamber 116a and the second sealing chamber 116b. Note that a desiccant may be provided on the sealing substrate in the first sealing chamber 116a and the second sealing chamber 116b. Moreover, you may stock the vapor deposition mask used in the case of vapor deposition in sealing substrate stock chamber 130a, 130b.
[0056]
Next, in order to degas the substrate provided with the light-emitting element, after annealing in a vacuum or an inert atmosphere, the sealing substrate provided with the sealing material and the substrate provided with the light-emitting element are attached. Match. The sealed space is filled with nitrogen or an inert gas. Note that here, an example in which the sealing material is formed over the sealing substrate is described; however, there is no particular limitation, and the sealing material may be formed over the substrate over which the light-emitting element is formed.
[0057]
Next, the pair of bonded substrates is irradiated with UV light by an ultraviolet irradiation mechanism provided in the sealing chambers 116 a and 116 b to cure the sealing material. In addition, although ultraviolet curable + thermosetting resin was used here as a sealing material, it will not specifically limit if it is an adhesive material, What is necessary is just to use curable resin etc. only with ultraviolet rays.
[0058]
Further, instead of filling the sealed space with an inert gas, a resin may be filled. In the case of bottom emission type, since the cathode does not pass light, the resin material to be filled is not particularly limited, and UV curable resin or opaque resin may be used, but in the case of top emission type, the ultraviolet ray passes through the cathode. Since the EL layer is damaged, an ultraviolet curable resin cannot be used. Therefore, in the case of the top emission type, it is preferable to use a transparent resin that is thermoset as the filling resin.
[0059]
Next, the pair of bonded substrates is transferred from the sealing chamber 116 to the transfer chamber 114 and then transferred from the transfer chamber 114 to the take-out chamber 119 and taken out.
[0060]
Moreover, after taking out from the taking-out chamber 119, it heats and hardens a sealing material. When a top emission type is used and a thermosetting resin is filled, it can be cured simultaneously with the heat treatment for curing the sealing material.
[0061]
As described above, by using the manufacturing apparatus illustrated in FIG. 1, it is not necessary to expose the light-emitting element to the atmosphere until the light-emitting element is completely enclosed in a sealed space, and thus a highly reliable light-emitting device can be manufactured. In the transfer chamber 114, vacuum and a nitrogen atmosphere at atmospheric pressure are repeated. However, it is desirable that the transfer chambers 102, 104a, and 108 are always kept in vacuum.
[0062]
Although not shown here, there is provided a control control device that realizes full automation by controlling a path for moving the substrate to each processing chamber.
[0063]
Further, a substrate on which a transparent conductive film is formed as an anode is carried into the manufacturing apparatus shown in FIG. 1, and a light emitting element (light emission generated in a layer containing an organic compound is transparent in a direction opposite to the light emitting direction by the stacked structure). It is also possible to form a structure in which the electrode is extracted from the anode to the TFT (herein referred to as a bottom emission structure).
[0064]
In addition, when both the anode and the cathode are made of a transparent or translucent material, it is also possible to form a structure in which light emitted from a layer containing an organic compound is extracted to both the upper surface and the lower surface (herein referred to as a dual emission structure). It is.
[0065]
Further, FIG. 21 shows that when two kinds of substrates having different sizes are manufactured in parallel, a plurality of take-out chambers are required. Therefore, there are two take-out chambers, and further, a mask stock chamber and a coating chamber. Is an example. The same reference numerals as those in FIG. 1 are used.
[0066]
In FIG. 21, 100t is a gate, 1003 is a coating chamber, 1013 is a mask stock chamber, and 1019a and 1019b are extraction chambers.
[0067]
Note that the mask stock chamber 1013 is a place where a vapor deposition mask to be used for vapor deposition is stocked, and the vapor deposition mask is transported and set to each film deposition chamber when vapor deposition is appropriately performed. In particular, when the mask has a large area, it becomes difficult to stock the installation room. Therefore, it is preferable to separately provide a mask stock room as shown in FIG. Further, other than the vapor deposition mask, for example, a substrate may be stocked in the mask stock chamber 1013.
[0068]
In the coating chamber 1003, a layer made of a polymer material may be formed by an inkjet method, a spin coating method, or the like. For example, on the first electrode (anode), poly (ethylenedioxythiophene) / poly (styrenesulfonic acid) aqueous solution (PEDOT / PSS), polyaniline / camphorsulfonic acid acting as a hole injection layer (anode buffer layer) An aqueous solution (PANI / CSA), PTPDES, Et-PTPDK, PPBA, or the like may be applied to the entire surface and fired.
[0069]
In addition, when PEDOT / PSS is formed by spin coating, the film is formed over the entire surface, so that the end face, peripheral edge, terminal part, connection area between the cathode and lower wiring, etc. can be selectively removed. Preferably, for example, O using a mask in the pretreatment chamber 103a. ₂ It is preferable to remove by ashing or the like.
[0070]
(Embodiment 2)
8A to 8C illustrate a film formation apparatus in which a substrate and an evaporation source move relative to each other. 8A is a cross-sectional view in the X direction (cross section taken along the dotted line AA ′), FIG. 8B is a cross-sectional view in the Y direction (cross section taken along the dotted line BB ′), and FIG. 8C is a top view. . Note that FIGS. 8A to 8C show ones during vapor deposition.
[0071]
In the deposition apparatus shown in FIGS. 8A to 8C, the deposition source holder in which the container in which the deposition material is sealed moves in the deposition moves at a certain pitch with respect to the substrate. The substrate is moved at a pitch with respect to the source. Moreover, it is preferable that the vapor deposition source holder is moved at a certain pitch so that the ends of the sublimated vapor deposition material overlap (overlap).
[0072]
Although this evaporation source holder may be single or plural, if it is provided for each laminated film of EL layers, it can be efficiently and continuously evaporated. Moreover, the container installed in a vapor deposition source holder may be single or plural, and a plurality of containers filled with the same vapor deposition material may be installed. Note that in the case where a container having a different vapor deposition material is provided, a film can be formed on the substrate in a state where the sublimated vapor deposition materials are mixed (this is called co-deposition).
[0073]
8A to 8C, the film forming chamber 11 includes a substrate holder 12, a vapor deposition source holder 17 provided with a vapor deposition shutter 15, and a means (not shown) for moving the vapor deposition source holder. Means for creating a reduced-pressure atmosphere. A substrate 13 and a vapor deposition mask 14 are installed in the film forming chamber 11. In addition, the alignment of the vapor deposition mask may be confirmed using a CCD camera (not shown). The vapor deposition source holder 17 is provided with a container in which a vapor deposition material 18 is enclosed. This film forming chamber 11 has a vacuum degree of 5 × 10 5 by means of a reduced pressure atmosphere. ^-3 Torr (0.665 Pa) or less, preferably 10 ^-Four -10 ^-6 It is evacuated to Pa.
[0074]
Further, during vapor deposition, the vapor deposition material is sublimated (vaporized) in advance by resistance heating, and is scattered toward the substrate 13 by opening the shutter 15 during vapor deposition. The evaporated evaporation material 19 scatters upward and is selectively deposited on the substrate 13 through an opening provided in the deposition mask 14. Note that it is preferable that the film forming speed, the moving speed of the evaporation source holder, and the opening / closing of the shutter can be controlled by a control device such as a PC. The deposition rate can be controlled by the moving speed of the deposition source holder.
[0075]
Although not shown, it is possible to perform deposition while measuring the film thickness of the deposited film with a crystal resonator provided in the film forming chamber 11. When measuring the film thickness of the deposited film using this crystal resonator, the mass change of the film deposited on the crystal resonator can be measured as a change in the resonance frequency.
[0076]
In the vapor deposition apparatus shown in FIGS. 8A to 8C, during vapor deposition, the distance d between the substrate 13 and the vapor deposition source holder 17 is typically 30 cm or less, preferably 20 cm or less, more preferably By narrowing to 5-15 cm, the utilization efficiency and throughput of the vapor deposition material are remarkably improved.
[0077]
In the vapor deposition apparatus, the vapor deposition source holder 17 includes a container (typically a crucible), a heater disposed on the outside of the container via a heat equalizing member, a heat insulating layer provided on the outside of the heater, The outer cylinder which accommodated these, the cooling pipe turned to the outer side of the outer cylinder, and the vapor deposition shutter 15 which opens and closes the opening part of the outer cylinder including the opening part of a crucible are comprised. In addition, the container which can be conveyed in the state to which this heater was fixed to the container may be sufficient. The container is formed of a material such as a sintered body of BN, a composite sintered body of BN and AlN, quartz, or graphite, and can withstand high temperature, high pressure, and reduced pressure.
[0078]
In addition, the evaporation source holder 17 is provided with a mechanism that can move in the film forming chamber 11 in the X direction or the Y direction while keeping the level. Here, the vapor deposition source holder 17 is moved in a zigzag manner on a two-dimensional plane as shown in FIG. 9A or 9B. Moreover, the moving pitch of the vapor deposition source holder 17 may be appropriately adjusted to the interval between the insulators. The insulator 10 is arranged in a stripe shape so as to cover the end portion of the first electrode 21.
[0079]
9A and 9B, the timing at which the vapor deposition source holders A, B, C, and D start to move may be after the previous vapor deposition source holder has stopped or before it has stopped. There may be. For example, an organic material having a hole transport property is set in the vapor deposition holder A, an organic material to be a light emitting layer is set in the vapor deposition holder B, an organic material having an electron transport property is set in the vapor deposition holder C, and the vapor deposition holder D is set. If a material to be a cathode buffer is set, these material layers can be continuously stacked in the same chamber. In addition, when the movement of the next vapor deposition source holder is started before the deposited film is solidified, in the EL layer having a laminated structure, an area where the vapor deposition material is mixed at the interface with each film (mixed area) Can be formed.
[0080]
According to the present invention in which the substrate and the evaporation source holders A, B, C, and D move relative to each other as described above, it is possible to reduce the size of the apparatus without having to provide a long distance between the substrate and the evaporation source holder. Further, since the vapor deposition apparatus is small, the deposition material that has been sublimated is reduced from adhering to the inner wall of the deposition chamber or the deposition shield, and the vapor deposition material can be used without waste. Furthermore, in the vapor deposition method of the present invention, since there is no need to rotate the substrate, it is possible to provide a vapor deposition apparatus that can suppress a shift between the substrate and the mask during rotation and can handle a large area substrate. Further, according to the present invention in which the vapor deposition source holder moves in the X-axis direction and the Y-axis direction with respect to the substrate, it is possible to form the vapor deposition film uniformly.
[0081]
Moreover, the organic compound with which a vapor deposition source holder is equipped does not necessarily need to be 1 type or 1 type, and multiple may be sufficient as it. For example, in addition to one kind of material provided as a light-emitting organic compound in the evaporation source holder, another organic compound (dopant material) that can be a dopant may be provided together. The organic compound layer to be deposited is composed of a host material and a light emitting material (dopant material) that has lower excitation energy than the host material, and the excitation energy of the dopant is the excitation energy of the hole transporting region and the excitation of the electron transport layer. It is preferable to design so that it may become lower than energy. This prevents the diffusion of the molecular excitons of the dopant and allows the dopant to emit light effectively. Further, if the dopant is a carrier trap type material, the carrier recombination efficiency can also be increased. In addition, a case where a material capable of converting triplet excitation energy into light emission is added to the mixed region as a dopant is also included in the present invention. In forming the mixed region, a concentration gradient may be provided in the mixed region.
[0082]
Further, when a plurality of organic compounds are provided in one vapor deposition source holder, it is desirable that the evaporation direction is oblique so as to intersect at the position of the vapor deposition object so that the organic compounds are mixed with each other. In order to perform co-evaporation, the deposition source holder may be provided with four types of deposition materials (for example, two types of host materials as the deposition material a and two types of dopant materials as the deposition material b). In addition, when the pixel size is small (or when the interval between the insulators is narrow), the inside of the container is divided into four, and the film can be accurately formed by performing co-evaporation in which each is appropriately deposited.
[0083]
Further, since the distance d between the substrate 13 and the vapor deposition source holder 17 is typically 30 cm or less, preferably 5 cm to 15 cm, the vapor deposition mask 14 may also be heated. Accordingly, the vapor deposition mask 14 is made of a metal material having a low thermal expansion coefficient that is not easily deformed by heat (for example, a refractory metal such as tungsten, tantalum, chromium, nickel or molybdenum or an alloy containing these elements, a material such as stainless steel, inconel, or hastelloy). ) Is desirable. For example, a low thermal expansion alloy of 42% nickel and 58% iron can be used. Moreover, in order to cool the vapor deposition mask to be heated, a mechanism for circulating a cooling medium (cooling water, cooling gas) in the vapor deposition mask may be provided.
[0084]
In order to clean the deposit attached to the mask, it is preferable that plasma be generated in the film formation chamber by the plasma generation unit to vaporize the deposit attached to the mask and exhaust it outside the film formation chamber. Therefore, an electrode is provided separately from the mask, and the high frequency power supply 20 is connected to one of them.
[0085]
The film formation chamber is Ar, H, F, NF _Three Or a gas introduction means for introducing one or more kinds of gases selected from O, and a means for exhausting the vaporized deposit. With the above configuration, it is possible to clean the film formation chamber without touching the atmosphere during maintenance.
[0086]
For example, for cleaning, the inside of the chamber is purged with nitrogen and then evacuated, and plasma is generated between the mask and the electrode (substrate shutter) so that either one of the high frequency power supplies (13.56 MHz) Can be connected. For example, when argon and hydrogen are introduced at a flow rate of 30 sccm and stabilized, an RF power of 800 W may be applied to generate plasma, and the mask and the inner wall of the chamber can be cleaned.
[0087]
The film formation chamber 11 is connected to an evacuation chamber that evacuates the film formation chamber. As the vacuum evacuation processing chamber, a magnetic levitation type turbo molecular pump, a cryopump, or a dry pump is provided. As a result, the ultimate vacuum in the film forming chamber 11 is 10 ^-Five -10 ^-6 Pa can be set, and the back diffusion of impurities from the pump side and the exhaust system can be controlled. In order to prevent impurities from being introduced into the film formation chamber 11, an inert gas such as nitrogen or a rare gas is used as the introduced gas. These gases to be introduced are those purified by a gas purifier before being introduced into the apparatus. Therefore, it is necessary to provide a gas purifier so that the gas is introduced into the film forming chamber 11 after being highly purified. Accordingly, oxygen, water, and other impurities contained in the gas can be removed in advance, so that these impurities can be prevented from being introduced into the film formation chamber 11.
[0088]
Further, the substrate holder 12 includes a permanent magnet, a vapor deposition mask made of metal is fixed by a magnetic force, and the substrate 13 sandwiched therebetween is also fixed. Here, an example in which the vapor deposition mask is in close contact with the substrate 13 is shown, but a substrate holder or vapor deposition mask holder that is fixed with a certain distance may be provided as appropriate.
[0089]
With the film formation chamber having a mechanism for moving the vapor deposition source holder as described above, it is not necessary to increase the distance between the substrate and the vapor deposition source holder, and the vapor deposition film can be formed uniformly.
[0090]
(Embodiment 3 )
Here, a configuration of a container for enclosing a deposition material and a deposition source holder around the container will be described in detail with reference to FIGS. 10A and 10B show a state where the shutter is opened.
[0091]
FIG. 10A shows a cross-sectional view around one container installed in the evaporation source holder 304. The heating means 303 provided in the evaporation source holder, the power supply 307 of the heating means, and the evaporation of the container A material 302, a filter 305 provided in the container, and a shutter 306 disposed above the opening provided in the upper part of the container are described. The heating means may be resistance heating, high frequency, laser, or the like, and specifically, an electric coil may be used.
[0092]
The vapor deposition material 302 heated by the heating means 303 is sublimated, and the sublimated vapor deposition material rises upward from the opening of the container. At this time, the sublimated material having a certain size (filter eye) or larger cannot pass through the filter 305 provided in the container, returns to the container, and is sublimated again. Alternatively, the filter 305 may be formed of a highly conductive material and heated by a heating unit (not shown). By this heating, the vapor deposition material can be prevented from solidifying and adhering to the filter.
[0093]
A container with such a filter is used to deposit vapor deposition materials of a uniform size, so that the deposition rate can be controlled and a uniform film thickness can be obtained. it can. Of course, when uniform and uniform deposition is possible, it is not always necessary to provide a filter. Note that the shape of the container is not limited to that shown in FIG.
[0094]
Next, a container in which a vapor deposition material having a structure different from that in FIG. 10A is enclosed will be described with reference to FIG.
[0095]
Referring to FIG. 10B, the container 311 installed in the vapor deposition source holder, the vapor deposition material 312 in the container, the first heating means 313 provided in the vapor deposition source holder, and the power source of the first heating means. 318, a shutter 317 disposed on the opening of the container, and provided above the opening filter 316, the second heating means 314 provided so as to surround the filter, and the power source 319 of the second heating means are described.
[0096]
Then, the vapor deposition material 312 heated by the first heating unit 313 is sublimated, and the sublimated vapor deposition material rises upward from the opening of the container 311. At this time, the sublimated material having a certain size or more is provided above the opening of the container. filter 316 cannot pass between the second heating means 314, filter Collides with 316 and returns to the container. And filter Since 316 is heated by the second heating means 314, filter Solidification and adhesion of the vapor deposition material to 316 can be prevented. further, filter 316 is preferably formed using a highly conductive material.
[0097]
Further, the heating temperature (T ₁ ) Is the sublimation temperature (T _A ), The heating temperature by the second heating means 314 (T ₂ ) May be at a lower temperature than the first heating means. This is because the vapor deposition material once sublimated is easily sublimated, and thus sublimates without applying the actual sublimation temperature. That is, each heating temperature is T ₁ ≧ T ₂ > T _A If it becomes.
[0098]
like this, filter The vapor deposition material having a uniform size is sublimated by the container configured to provide the heating means around, and the sublimated material passes near the heating means. filter Adhesion of the vapor deposition material to the substrate can be reduced, the film formation rate can be controlled, and a uniform film thickness can be obtained, so that uniform and uniform vapor deposition can be performed. Of course, if uniform and non-uniform deposition is possible, filter There is no need to provide. Further, the shape of the container is not limited to FIGS. 10A and 10B, and for example, the shape as shown in FIGS. 11A and 11B may be used.
[0099]
FIG. 11A shows an example in which the heating means 402 is provided in the vapor deposition source holder 404, and a cross-sectional view of a shape example of the containers 403 and 405 in which the opening of the container is narrowed upward is described. . Alternatively, after the purified vapor deposition material is sealed in a container having a wide opening, the shape of the containers 403 and 405 illustrated in FIG. And if the diameter of the opening part of the container which narrows toward the top is made into the magnitude | size of the vapor deposition material to form into a film, the effect similar to a filter can be acquired.
[0100]
FIG. 11B illustrates an example in which a heating unit 412 is provided in the container. The shapes of the containers 413 and 415 are the same as those in FIG. 11A, but the heating means 412 is provided in the containers themselves. And the power supply of this heating means should just be designed so that it may become an ON state in the stage installed in the vapor deposition source holder. With such a configuration in which a heating means is provided in the container itself, even a container having an opening that is difficult to heat can sufficiently heat the vapor deposition material.
[0101]
Next, a specific configuration of the vapor deposition source holder will be described with reference to FIG. 12A and 12B are enlarged views of the vapor deposition source holder.
[0102]
FIG. 12A shows a configuration example in which four containers 501 each having a vapor deposition material sealed in a vapor deposition source holder 502 are provided in a lattice shape, and a shutter 503 is provided on each container. FIG. This is a configuration example in which four containers 511 each having a vapor deposition material sealed in a holder 512 are linearly provided, and a shutter 513 is provided on each container.
[0103]
A plurality of containers 501 and 511 in which the same material is sealed may be installed in the vapor deposition source holders 502 and 512 shown in FIG. 12A or 12B, or a single container may be installed. Further, co-evaporation may be performed by installing a container in which different vapor deposition materials (for example, a host material and a guest material) are sealed. As described above, the vapor deposition material is sublimated by heating the container, and film formation is performed on the substrate.
[0104]
Further, as shown in FIG. 12A or 12B, shutters 503 and 513 may be provided above each container to control whether or not the deposited vapor deposition material is formed. Further, only one shutter may be provided above all containers. In addition, this shutter can reduce the unnecessary vapor deposition material from being sublimated and scattered without stopping the heating of the vapor deposition source holder that does not form a film, that is, the standby vapor deposition source holder. In addition, the structure of a vapor deposition source holder is not limited to FIG. 12, What is necessary is just to design a practitioner suitably.
[0105]
With the above evaporation source holder and container, the evaporation material can be sublimated efficiently,
Furthermore, since film formation can be performed with the vapor deposition materials having the same size, a uniform and uniform vapor deposition film is formed. Further, since a plurality of vapor deposition materials can be installed in the vapor deposition source holder, co-vapor deposition can be easily performed. In addition, the EL layer can be formed at a time without changing the deposition chamber for each EL layer film.
[0106]
(Embodiment 4 )
Next, a system of a manufacturing method in which the purified vapor deposition material is sealed in a container as described above, and the container is directly installed in a vapor deposition apparatus that is a film forming apparatus and vapor deposition is performed will be described with reference to FIG. To do.
[0107]
FIG. 13 shows a manufacturer (typically a material manufacturer) 618 that produces and refines an organic compound material that is a vapor deposition material, and a light emitting device manufacturer that has a vapor deposition apparatus. Describes a manufacturing system in a production factory) 619.
[0108]
First, an order 610 is made from the light emitting device manufacturer 619 to the material manufacturer 618. The material manufacturer 618 sublimates and purifies the vapor deposition material based on the order 610 and encloses the powder vapor deposition material 612 purified to a high purity in the first container 611. Thereafter, the material maker 618 isolates the first container 611 from the atmosphere so that extra impurities do not adhere to the inside or outside of the first container, and to the second containers 621a and 621b to prevent contamination from occurring in the clean environment chamber. Store and seal. When sealing, the inside of the second containers 621a and 621b is preferably filled with an inert gas such as vacuum or nitrogen. Note that it is preferable to clean the first container 611 and the second containers 621a and 621b before purifying or storing the ultrahigh-purity vapor deposition material 612. Further, the second containers 621a and 621b may be packaging films having a barrier property to block the mixing of oxygen and moisture, but in order to be able to be taken out automatically, they are sturdy in a cylindrical shape or box shape. It is preferable to use a light-shielding container.
[0109]
After that, the first container 611 is conveyed 617 from the material manufacturer 618 to the light emitting device manufacturer 619 while being sealed in the second containers 621a and 621b.
[0110]
In the light-emitting device manufacturer 619, the first container 611 is directly introduced into the processing chamber 613 that can be evacuated while being sealed in the second containers 621a and 621b. Note that the processing chamber 613 is a vapor deposition apparatus in which a heating unit 614 and a substrate holding unit (not shown) are installed.
[0111]
Thereafter, the inside of the processing chamber 613 is evacuated to a clean state in which oxygen and moisture are reduced as much as possible, and then the first container 611 is taken out from the second containers 621a and 621b without breaking the vacuum, The container 611 is placed in contact with the heating means 614, and a vapor deposition source can be prepared. Note that a deposition target (here, a substrate) 615 is provided in the treatment chamber 613 so as to face the first container 611.
[0112]
Next, heat is applied to the vapor deposition material by the heating means 614 to form a vapor deposition film 616 on the surface of the deposition object 615. The vapor deposition film 616 thus obtained does not contain impurities, and when the light emitting element is completed using the vapor deposition film 616, high reliability and high luminance can be realized.
[0113]
Alternatively, the vapor deposition material remaining in the first container 611 after film formation may be purified by sublimation in the light-emitting device manufacturer 619. After film formation, the first container 611 is placed in the second containers 621a and 621b, taken out from the treatment chamber 613, and transferred to a purification chamber in which sublimation purification is performed. Therefore, the remaining vapor deposition material is purified by sublimation, and the vapor deposition material on the powder purified to high purity is sealed in another container. Then, it conveys to the process chamber 613 in the state sealed with the 2nd container, and performs a vapor deposition process. At this time, the relationship between the temperature (T3) for purifying the remaining vapor deposition material, the rising temperature (T4) around the vapor deposition material, and the temperature (T5) around the vapor deposition material subjected to sublimation purification is T3> T4. It is preferable that T5 is satisfied. That is, in the case of sublimation purification, if the temperature is lowered toward the container that encloses the vapor deposition material to be sublimated and purified, convection occurs and the sublimation purification can be performed efficiently. Note that a purification chamber in which sublimation purification is performed may be provided in contact with the treatment chamber 613, and the sublimation-purified deposition material may be transported without using a second container for sealing.
[0114]
As described above, the first container 611 is installed in the vapor deposition chamber which is the processing chamber 613 without being exposed to the atmosphere, and vapor deposition is performed while maintaining the purity at the stage where the vapor deposition material 612 is stored by the material manufacturer. Make it possible. Therefore, according to the present invention, it is possible to realize a manufacturing system that is fully automated and improves throughput, and that it is possible to realize a consistent closed system that can avoid contamination of the vapor deposition material 612 purified by the material manufacturer 618. Become. Furthermore, since the material maker directly stores the vapor deposition material 612 in the first container 611 based on the order, only a necessary amount can be provided to the light emitting device manufacturer, and a relatively expensive vapor deposition material can be used efficiently. . Note that the first container and the second container can be reused, leading to low cost.
[0115]
Next, the form of the container to convey is demonstrated concretely using FIG. The second container divided into an upper part (621a) and a lower part (621b) used for conveyance is for fixing the first container provided on the upper part of the second container, and pressurizing the fixing means. A spring 705, a gas inlet 708 serving as a gas path for holding the second container provided under the second container under reduced pressure, an O-ring 707 for fixing the upper container 621a and the lower container 621b, It has a fastener 702. In the second container, a first container 611 in which a purified vapor deposition material is enclosed is installed. Note that the second container is preferably formed using a material containing stainless steel, and the first container is preferably formed using a material containing titanium.
[0116]
In the material manufacturer, the purified deposition material is sealed in the first container 611. Then, the second upper part 621a and the lower part 621b are aligned via the O-ring 707, the upper container 621a and the lower container 621b are fixed by the fastener 702, and the first container 611 is sealed in the second container. . Thereafter, the inside of the second container is depressurized via the gas inlet 708, further replaced with a nitrogen atmosphere, the spring 705 is adjusted, and the first container 611 is fixed by the fixing means 706. In addition, you may install a desiccant in a 2nd container. By keeping the inside of the second container in a vacuum, reduced pressure, or nitrogen atmosphere in this way, even a slight amount of oxygen or water can be prevented from adhering to the vapor deposition material.
[0117]
In this state, the first container 611 is transferred directly to the light emitting device manufacturer 619 and installed in the processing chamber 613. Thereafter, the vapor deposition material is sublimated by heating, and a vapor deposition film 616 is formed.
[0118]
Next, a mechanism for installing the first container, which is sealed and transported in the second container, in the film forming chamber will be described with reference to FIGS. 15 and 16. FIG. 15 and FIG. 16 show the middle of the conveyance of the first container.
[0119]
FIG. 15A conveys the first container, a stage 804 on which the first container or the second container is placed, a vapor deposition source holder 803, a rotary stage 807 on which the stage 804 and the vapor deposition source holder 803 are placed, and the first container. FIG. 15B is a perspective view of the installation chamber, and FIG. The installation chamber 805 is disposed adjacent to the film formation chamber 806, and the atmosphere of the installation chamber can be controlled by means for controlling the atmosphere via the gas inlet. In addition, the conveyance means of the present invention is not limited to the configuration for conveying the first container with the side surface sandwiched as shown in FIG. 15, and the first container from above the first container. It may be configured to carry (pinch) the sheet.
[0120]
In such an installation chamber 805, the second container is placed on the table 804 with the fastener 702 removed. Next, the inside of the installation chamber 805 is depressurized by means for controlling the atmosphere. When the pressure in the installation chamber is equal to the pressure in the second container, the second container can be easily opened. Then, the upper part 621 a of the second container is removed by the conveying means 802, and the first container 611 is installed in the vapor deposition source holder 803. Although not shown, a place where the removed upper portion 621a is disposed is provided as appropriate. Then, the evaporation source holder 803 moves from the installation chamber 805 to the film formation chamber 806.
[0121]
Thereafter, the vapor deposition material is sublimated by the heating means provided in the vapor deposition source holder 803, and film formation is started. When a shutter (not shown) provided in the vapor deposition source holder 803 is opened during the film formation, the sublimated vapor deposition material scatters in the direction of the substrate, is vapor deposited on the substrate, and the light emitting layer (hole transport layer, hole injection). A layer, an electron transport layer, and an electron injection layer).
[0122]
After the vapor deposition is completed, the vapor deposition source holder 803 returns to the installation chamber 805, and the first container 611 installed in the vapor deposition source holder 803 is transferred to the second container installed on the table 804 by the transport unit 802. It moves to a lower container (not shown) and is sealed by the upper container 621a. At this time, it is preferable that the first container, the upper container 621a, and the lower container are sealed with the transported combination. In this state, the installation chamber 805 is set to atmospheric pressure, the second container is taken out of the installation chamber, the fastener 702 is fixed, and the material is delivered to the material manufacturer 618.
[0123]
Next, a mechanism for installing a plurality of first containers sealed in a second container different from that shown in FIG. 15 in a plurality of vapor deposition source holders will be described with reference to FIG.
[0124]
FIG. 16A shows a table 904 on which the first container or the second container is placed, a plurality of vapor deposition source holders 903, a plurality of transport means 902 for transporting the first container, and a turntable 907. FIG. 16B is a perspective view of the installation chamber 905. FIG. Further, the installation chamber 905 is disposed adjacent to the film formation chamber 906, and the atmosphere of the installation chamber can be controlled by means for controlling the atmosphere via the gas inlet.
[0125]
The plurality of first containers 611 are installed in the plurality of vapor deposition source holders 903 by using the rotary table 907 and the plurality of transfer units 902, and the plurality of first containers are placed on the table from the plurality of vapor deposition source holders after film formation is completed. The operation of moving to 904 can be performed efficiently. At this time, the first container is preferably installed in the second container that has been transported.
[0126]
Note that the turntable 907 may have a function of rotating in order to efficiently carry the vapor deposition source holder that starts vapor deposition and the vapor deposition source holder that has completed vapor deposition. The turntable 907 is not limited to the above-described configuration, and the turntable 907 has a function of moving to the left and right. The first container may be installed in the vapor deposition source holder.
[0127]
The vapor deposition film formed by the vapor deposition apparatus as described above can reduce impurities to the limit. When a light emitting element is completed using the vapor deposition film, high reliability and luminance can be realized. In addition, such a manufacturing system allows the container enclosed by the material manufacturer to be directly installed in the vapor deposition system, so that the vapor deposition material can prevent the adhesion of oxygen and water, and it can be used for future ultra-high purity of light emitting devices. It becomes possible. Moreover, waste of material can be eliminated by repurifying the container having the remaining evaporation material. Furthermore, the first container and the second container can be reused, and cost reduction can be realized.
[0128]
The present invention having the above-described configuration will be described in more detail with the following examples.
[0129]
(Example)
[Example 1]
In this embodiment, an example in which a TFT is formed over a substrate having an insulating surface and an EL element which is a light emitting element is formed is shown in FIG. In this embodiment, a cross-sectional view of one TFT connected to an EL element in a pixel portion is shown.
[0130]
First, the base insulating film 201 including a stack of insulating films such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film is formed over the substrate 200 having an insulating surface. Here, a two-layer structure is used as the base insulating film 201; however, a single-layer film of the insulating film or a structure in which two or more layers are stacked may be used. As the first layer of the base insulating film, a plasma CVD method is used, and SiH _Four , NH _Three And N ₂ A silicon oxynitride film formed using O as a reaction gas is formed to a thickness of 10 to 200 nm (preferably 50 to 100 nm). Here, a silicon oxynitride film (composition ratio: Si = 32%, O = 27%, N = 24%, H = 17%) with a thickness of 50 nm is formed. Next, as the second layer of the base insulating film, a plasma CVD method is used, and SiH _Four And N ₂ A silicon oxynitride film formed using O as a reaction gas is formed to a thickness of 50 to 200 nm (preferably 100 to 150 nm). Here, a 100-nm-thick silicon oxynitride film (composition ratio Si = 32%, O = 59%, N = 7%, H = 2%) is formed.
[0131]
Next, a semiconductor layer is formed over the base film. The semiconductor layer is formed by forming a semiconductor film having an amorphous structure by a known means (sputtering method, LPCVD method, plasma CVD method, etc.) and then crystallizing treatment (laser crystallization method, thermal crystallization method, or A crystalline semiconductor film obtained by performing a thermal crystallization method using a catalyst such as nickel) is formed into a desired shape by patterning. The semiconductor layer is formed with a thickness of 25 to 80 nm (preferably 30 to 60 nm). There is no limitation on the material of the crystalline semiconductor film, but it is preferably formed of silicon or a silicon germanium alloy.
[0132]
When a crystalline semiconductor film is formed by laser crystallization, a pulse oscillation type or continuous emission type excimer laser, YAG laser, YVO _Four A laser can be used. When these lasers are used, it is preferable to use a method in which laser light emitted from a laser oscillator is linearly collected by an optical system and irradiated onto a semiconductor film. Crystallization conditions are appropriately selected by the practitioner. When an excimer laser is used, the pulse oscillation frequency is 30 Hz and the laser energy density is 100 to 400 mJ / cm. ² (Typically 200-300mJ / cm ² ). When a YAG laser is used, the second harmonic is used and the pulse oscillation frequency is 1 to 10 kHz, and the laser energy density is 300 to 600 mJ / cm. ² (Typically 350-500mJ / cm ² ) Then, if the laser beam condensed linearly with a width of 100 to 1000 μm, for example 400 μm, is irradiated over the entire surface of the substrate, the superposition ratio (overlap ratio) of the linear laser light at this time is 50 to 98%. Good.
[0133]
Next, the surface of the semiconductor layer is washed with an etchant containing hydrofluoric acid to form a gate insulating film 202 that covers the semiconductor layer. The gate insulating film 202 is formed of an insulating film containing silicon with a thickness of 40 to 150 nm by using a plasma CVD method or a sputtering method. In this embodiment, a silicon oxynitride film (composition ratio: Si = 32%, O = 59%, N = 7%, H = 2%) is formed to a thickness of 115 nm by plasma CVD. Needless to say, the gate insulating film is not limited to the silicon oxynitride film, and another insulating film containing silicon may be used as a single layer or a stacked structure.
[0134]
Next, after cleaning the surface of the gate insulating film 202, the gate electrode 210 is formed.
[0135]
Next, an impurity element imparting p-type conductivity to the semiconductor (such as B), here boron, is added as appropriate, so that the source region 211 and the drain region 212 are formed. After the addition, heat treatment, intense light irradiation, or laser light irradiation is performed to activate the impurity element. Simultaneously with activation, plasma damage to the gate insulating film and plasma damage to the interface between the gate insulating film and the semiconductor layer can be recovered. In particular, in an atmosphere of room temperature to 300 ° C., the impurity element is activated from the front surface or the back surface using an excimer laser. Alternatively, the YAG laser may be activated by irradiation with the second harmonic, and the YAG laser is a preferable activation means because it requires less maintenance.
[0136]
In the subsequent steps, after hydrogenation, an insulator 213a made of an organic material or an inorganic material (for example, made of a photosensitive organic resin) is formed, and then an aluminum nitride film, AlN _X O _Y A first protective film 213b made of an aluminum nitride oxide film or a silicon nitride film shown in FIG. AlN _X O _Y The film indicated by may be formed by introducing oxygen, nitrogen, or a rare gas from the gas introduction system by RF sputtering using a target made of AlN or Al. AlN _X O _Y In the layer represented by the above, it may be in a range containing several atm% or more, preferably 2.5 atm% to 47.5 atm%, and oxygen is 47.5 atm% or less, preferably 0.01 to less than 20 atm%. I just need it. Next, a contact hole reaching the source region or the drain region is formed. Next, a source electrode (wiring) 215 and a drain electrode 214 are formed to complete a TFT (p-channel TFT). This TFT is a TFT that controls a current supplied to an OLED (Organic Light Emitting Device).
[0137]
Further, the TFT structure is not limited to the TFT structure of this embodiment. If necessary, a lightly doped drain (LDD) structure having an LDD region between a channel formation region and a drain region (or source region) may be used. . In this structure, a region to which an impurity element is added at a low concentration is provided between a channel formation region and a source region or a drain region formed by adding an impurity element at a high concentration, and this region is referred to as an LDD region. I'm calling. Further, a so-called GOLD (Gate-drain Overlapped LDD) structure in which an LDD region is disposed so as to overlap with a gate electrode through a gate insulating film may be employed. Note that it is preferable that the gate electrode has a stacked structure, the upper gate electrode and the lower gate electrode are etched to have different taper angles, and the LDD structure or the GOLD structure is formed by self-alignment using the gate electrode as a mask.
[0138]
In this embodiment, the p-channel TFT is used for explanation. However, it goes without saying that an n-channel TFT can be formed by using an n-type impurity element (P, As, etc.) instead of the p-type impurity element. Yes.
[0139]
In this embodiment, the top gate type TFT is described as an example. However, the present invention can be applied regardless of the TFT structure. For example, the present invention can be applied to a bottom gate type (reverse stagger type) TFT or a forward stagger type TFT. Is possible.
[0140]
Next, in the pixel portion, first electrodes 217 in contact with the connection electrodes in contact with the drain region are arranged in a matrix. The first electrode 217 serves as an anode or a cathode of the light emitting element. Next, an insulator (referred to as a bank, a partition, a barrier, a bank, or the like) 216 is formed to cover the end portion of the first electrode 217.
[0141]
As the insulator 216, a photosensitive organic resin is used. For example, when negative photosensitive acrylic is used as the material of the insulator 216, the insulator 216 has a curved surface having a first radius of curvature at the upper end of the insulator 216, and a second radius of curvature at the lower end of the insulator. It is preferable that the first radius of curvature and the second radius of curvature are 0.2 μm to 3 μm. Next, a layer 218 containing an organic compound is formed in the pixel portion, and a second electrode 219 is formed thereon to complete an EL element. The second electrode 219 serves as a cathode or an anode of the EL element.
[0142]
Alternatively, the insulator 216 covering the end portion of the first electrode 217 may be covered with a second protective film formed of an aluminum nitride film, an aluminum nitride oxide film, or a silicon nitride film.
[0143]
For example, FIG. 17B illustrates an example in which positive photosensitive acrylic is used as a material for the insulator 216. Only the upper end portion of the insulator 316a using positive photosensitive acrylic has a curved surface having a radius of curvature, and the insulator 316a is formed of an aluminum nitride film, an aluminum nitride oxide film, or a silicon nitride film. 2 with a protective film 316b.
[0144]
Next, when the first electrode 217 is used as an anode, a metal having a high work function (Pt, Cr, W, Ni, Zn, Sn, In) is used as the material of the first electrode 217, and the ends are insulated. After covering with an object (referred to as a bank, a partition, a barrier, a bank, or the like) 216 or 316, the insulator 216 or the like is formed using the evaporation apparatus having the evaporation source holder and the film formation chamber described in Embodiments 1 to 3. Vapor deposition is performed while moving the vapor deposition source in accordance with 316. For example, the degree of vacuum is 5 × 10 ^-3 Torr (0.665 Pa) or less, preferably 10 ^-Four -10 ^-6 Vapor deposition is performed in a deposition chamber evacuated to Pa. At the time of vapor deposition, the organic compound is vaporized in advance by resistance heating, and is scattered in the direction of the substrate by opening the shutter at the time of vapor deposition. The vaporized organic compound is scattered upward and deposited on the substrate through an opening provided in the metal mask, and includes a light emitting layer (including a hole transport layer, a hole injection layer, an electron transport layer, and an electron injection layer). ) Is formed.
[0145]
Moreover, when forming the layer containing the organic compound which shows white as a whole light emitting element by a vapor deposition method, it can form by laminating | stacking each light emitting layer. For example, Alq _Three , Alq partially doped with Nile Red, a red luminescent dye _Three , P-EtTAZ, and TPD (aromatic diamine) are sequentially laminated to obtain a white color.
[0146]
In the case of using a vapor deposition method, as shown in Embodiment Mode 3, a container (typically a crucible) in which an EL material that is a vapor deposition material is stored in advance by a material manufacturer is installed in the film formation chamber. Is preferred. The installation is preferably performed without exposure to the atmosphere, and the crucible is preferably introduced into the film formation chamber while being sealed in the second container. Desirably, a chamber (installation chamber) having vacuum evacuation means connected to the film formation chamber is provided, where the crucible is taken out from the second container in a vacuum or an inert gas atmosphere, and the crucible is installed in the film formation chamber. . By doing so, the crucible and the EL material accommodated in the crucible can be prevented from being contaminated.
[0147]
Next, the second electrode 219 is formed as a cathode over the light-emitting layer. The second electrode 219 includes a thin film containing a metal (Li, Mg, Cs) having a small work function and a transparent conductive film (ITO (indium tin oxide alloy), indium zinc oxide alloy (In ₂ O _Three -ZnO), zinc oxide (ZnO) or the like. In order to reduce the resistance of the cathode, an auxiliary electrode may be provided over the insulator 216. The light-emitting element thus obtained emits white light. Note that although the example in which the layer 218 containing an organic compound is formed by an evaporation method is shown here, the layer is not particularly limited, and may be formed by a coating method (spin coating method, ink jet method, or the like).
[0148]
Further, in this embodiment, an example in which a layer made of a low molecular material is stacked as the organic compound layer is shown, but a layer made of a high molecular material and a layer made of a low molecular material may be stacked.
[0149]
Note that an active matrix light-emitting device having a TFT can have two structures in the light emission direction. One is a structure in which light emitted from the light-emitting element passes through the second electrode and enters the eyes of the observer. This is a case where light emitted from the light-emitting element passes through the second electrode and enters the eyes of an observer, and can be manufactured using the above steps.
[0150]
Another structure is that light emitted from the light emitting element passes through the first electrode and the substrate and enters the eyes of the observer. In the case where a structure in which light emitted from the light-emitting element passes through the first electrode and enters the eyes of the observer, the first electrode 217 is preferably formed using a light-transmitting material. For example, when the first electrode 217 is used as an anode, a transparent conductive film (ITO (indium tin oxide alloy), indium oxide zinc oxide alloy (In ₂ O _Three −ZnO), zinc oxide (ZnO), or the like, and an end portion is covered with an insulator (referred to as a bank, a partition, a barrier, a bank, or the like) 216, and then a layer 218 containing an organic compound is formed thereon. Metal film (MgAg, MgIn, AlLi, CaF ₂ The second electrode 219 made of an alloy such as CaN or a film formed by co-evaporation of an element belonging to Group 1 or Group 2 of the periodic table and aluminum may be formed as a cathode. In forming the cathode, a resistance heating method using vapor deposition may be used, and the cathode may be selectively formed using a vapor deposition mask.
[0151]
After the formation up to the second electrode 219 through the above steps, a sealing substrate is bonded to the light-emitting element formed over the substrate 200 with a sealant.
[0152]
Here, an external view of the entire active matrix light-emitting device will be described with reference to FIGS. 18A is a top view illustrating the light-emitting device, and FIG. 18B is a cross-sectional view taken along line AA ′ in FIG. 18A. A source signal line driver circuit 1101, a path / pixel portion 1102, and a gate signal line driver circuit 1103 are provided over a substrate 1110. Further, a space 1107 is formed on the inner side surrounded by the sealing substrate 1104, the sealant 1105, and the substrate 1110.
[0153]
Note that a wiring 1108 for transmitting a signal input to the source signal line driver circuit 1101 and the gate signal line driver circuit 1103 receives a video signal or a clock signal from an FPC (flexible printed circuit) 1109 serving as an external input terminal. Although only the FPC is shown here, a printed wiring board (PWB) may be attached to the FPC. The light-emitting device in this specification includes not only a light-emitting device body but also a state in which an FPC or a PWB is attached thereto.
[0154]
Next, a cross-sectional structure is described with reference to FIG. A driver circuit and a pixel portion are formed over the substrate 1110. Here, a source signal line driver circuit 1101 and a pixel portion 1102 are shown as the driver circuits.
[0155]
Note that as the source signal line driver circuit 1101, a CMOS circuit in which an n-channel TFT 1123 and a p-channel TFT 924 are combined is formed. Further, the TFT forming the driver circuit may be formed of a CMOS circuit, a PMOS circuit, or an NMOS circuit. Further, in this embodiment, a driver integrated type in which a drive circuit is formed on a substrate is shown, but this is not always necessary, and it can be formed outside the substrate.
[0156]
The pixel portion 1102 is formed by a plurality of pixels including a switching TFT 1111, a current control TFT 1112, and a first electrode (anode) 1113 electrically connected to the drain thereof.
[0157]
In addition, insulating films 1114 are formed on both ends of the first electrode (anode) 1113, and a layer 1115 containing an organic compound is formed on the first electrode (anode) 1113. The layer 1115 containing an organic compound is formed by moving the evaporation source holder in accordance with the insulating film 1114 using the evaporation apparatus described in Embodiments 1 and 2. Further, a second electrode (cathode) 1116 is formed over the layer 1115 containing an organic compound. Thus, a light-emitting element 1118 including the first electrode (anode) 1112, the layer 1115 containing an organic compound, and the second electrode (cathode) 1116 is formed. Here, since the light-emitting element 1118 emits white light, a color filter including a color conversion layer 1131 and a light-blocking layer (BM) 1132 (for the sake of simplicity, an overcoat layer is not shown here) is provided.
[0158]
Note that FIGS. 19A to 19B illustrate a structure in which light emitted from the light-emitting element passes through the second electrode and enters the eyes of the observer, so the color filter is disposed on the sealing substrate side 1104. However, in the case of a structure in which light emitted from the light-emitting element passes through the first electrode and enters the eyes of the observer, the color filter may be disposed on the substrate 1110 side.
[0159]
The second electrode (cathode) 1116 also functions as a wiring common to all pixels, and is electrically connected to the FPC 1109 through the connection wiring 1108. In addition, a third electrode (auxiliary electrode) 1117 is formed over the insulating film 1114, and the resistance of the second electrode is reduced.
[0160]
In addition, the sealing substrate 1104 is attached to the light emitting element 1118 formed over the substrate 1110 with a sealant 1105. Note that a spacer made of a resin film may be provided in order to secure a space between the sealing substrate 1104 and the light-emitting element 1118. The space 1107 inside the sealing agent 1105 is filled with an inert gas such as nitrogen. Note that an epoxy resin is preferably used as the sealant 1105. The sealing agent 1105 is preferably a material that does not transmit moisture and oxygen as much as possible. Furthermore, a substance having an effect of absorbing oxygen and water may be contained in the space 1107.
[0161]
Further, in this embodiment, a plastic substrate made of FRP (Fiberglass-Reinforced Plastics), PVF (polyvinyl fluoride), Mylar, polyester, acrylic, or the like is used as a material constituting the sealing substrate 1104 in addition to a glass substrate or a quartz substrate. be able to. Further, after the sealing substrate 1104 is bonded using the sealing agent 1105, the sealing substrate 1104 can be sealed with a sealing agent so as to cover the side surface (exposed surface).
[0162]
By encapsulating the light-emitting element as described above, the light-emitting element can be completely blocked from the outside, and a substance that promotes deterioration of the organic compound layer such as moisture and oxygen can be prevented from entering from the outside. Therefore, a highly reliable light-emitting device can be obtained.
[0163]
Further, this embodiment can be freely combined with any one of Embodiment Modes 1 to 4.
[0164]
(Example 2 )
As an electronic device using the light emitting device of the present invention, a video camera, a digital camera, a goggle type display (head mounted display), a navigation system, a sound reproduction device (car audio, audio component, etc.), a notebook type personal computer, a game device, Play back a recording medium such as a portable information terminal (mobile computer, mobile phone, portable game machine or electronic book), an image playback device (specifically, Digital Versatile Disc (DVD)) equipped with a recording medium, A device having a display capable of displaying). In particular, it is desirable to use a light-emitting device for a portable information terminal that often has an opportunity to see a screen from an oblique direction because the wide viewing angle is important. Specific examples of these electronic devices are shown in FIGS.
[0165]
FIG. 20A illustrates a light-emitting device, which includes a housing 2001, a support base 2002, a display portion 2003, a speaker portion 2004, a video input terminal 2005, and the like. The light emitting device of the present invention can be used for the display portion 2003. Further, according to the present invention, the light emitting device shown in FIG. Since the light-emitting device is a self-luminous type, a backlight is not necessary and a display portion thinner than a liquid crystal display can be obtained. The light emitting device includes all information display light emitting devices such as a personal computer, a TV broadcast receiver, and an advertisement display.
[0166]
FIG. 20B shows a digital still camera, which includes a main body 2101, a display portion 2102, an image receiving portion 2103, operation keys 2104, an external connection port 2105, a shutter 2106, and the like. The light emitting device of the present invention can be used for the display portion 2102. Further, according to the present invention, the digital still camera shown in FIG. 20B is completed.
[0167]
FIG. 20C illustrates a laptop personal computer, which includes a main body 2201, a housing 2202, a display portion 2203, a keyboard 2204, an external connection port 2205, a pointing mouse 2206, and the like. The light-emitting device of the present invention can be used for the display portion 2203. Further, according to the present invention, the light-emitting device shown in FIG. 20C is completed.
[0168]
FIG. 20D illustrates a mobile computer, which includes a main body 2301, a display portion 2302, a switch 2303, operation keys 2304, an infrared port 2305, and the like. The light emitting device of the present invention can be used for the display portion 2302. Further, according to the present invention, the mobile computer shown in FIG. 20D is completed.
[0169]
FIG. 20E illustrates a portable image reproducing device (specifically, a DVD reproducing device) provided with a recording medium, which includes a main body 2401, a housing 2402, a display portion A2403, a display portion B2404, and a recording medium (DVD or the like). A reading unit 2405, operation keys 2406, a speaker unit 2407, and the like are included. Although the display portion A 2403 mainly displays image information and the display portion B 2404 mainly displays character information, the light-emitting device of the present invention can be used for the display portions A, B 2403, and 2404. Note that an image reproducing device provided with a recording medium includes a home game machine and the like. Further, according to the present invention, the DVD reproducing apparatus shown in FIG.
[0170]
FIG. 20F illustrates a goggle type display (head mounted display), which includes a main body 2501, a display portion 2502, and an arm portion 2503. The light emitting device of the present invention can be used for the display portion 2502. Further, the goggle type display shown in FIG. 20F is completed by the present invention.
[0171]
FIG. 20G illustrates a video camera, which includes a main body 2601, a display portion 2602, a housing 2603, an external connection port 2604, a remote control receiving portion 2605, an image receiving portion 2606, a battery 2607, an audio input portion 2608, operation keys 2609, and the like. . The light-emitting device of the present invention can be used for the display portion 2602. Further, according to the present invention, the video camera shown in FIG.
[0172]
Here, FIG. 20H illustrates a mobile phone, which includes a main body 2701, a housing 2702, a display portion 2703, an audio input portion 2704, an audio output portion 2705, operation keys 2706, an external connection port 2707, an antenna 2708, and the like. The light emitting device of the present invention can be used for the display portion 2703. Note that the display portion 2703 can suppress current consumption of the mobile phone by displaying white characters on a black background. Further, the mobile phone shown in FIG. 20H is completed by the present invention.
[0173]
If the emission luminance of the luminescent material is increased in the future, the light including the output image information can be enlarged and projected by a lens or the like to be used for a front type or rear type projector.
[0174]
In addition, the electronic devices often display information distributed through electronic communication lines such as the Internet and CATV (cable television), and in particular, opportunities to display moving image information are increasing. Since the response speed of the light emitting material is very high, the light emitting device is preferable for displaying moving images.
[0175]
【Effect of the invention】
According to the present invention, it is possible to provide a manufacturing apparatus in which a plurality of film forming chambers for performing a vapor deposition process are continuously arranged. In this manner, since the film formation process is performed in parallel in the plurality of film formation chambers, the throughput of the light emitting device is improved, and the processing time per substrate can be shortened.
[0176]
Further, according to the present invention, although the number of processed sheets is slightly reduced, one or several film forming chambers can be maintained without temporarily stopping the production line.
[Brief description of the drawings]
FIG. 1 is a diagram showing an example of a manufacturing apparatus according to the present invention. (Embodiment 1)
FIG. 2 is a diagram illustrating an example of a sequence. (Embodiment 1)
FIG. 3 is an example of a substrate transport path. (Embodiment 1)
FIG. 4 is a diagram illustrating an example of a sequence. (Embodiment 1)
FIG. 5 is an example of a substrate transport path. (Embodiment 1)
FIG. 6 is a diagram illustrating an example of a sequence. (Embodiment 1)
FIG. 7 is an example of a conveyance path for two substrates. (Embodiment 1)
FIG. 8 is a view showing a vapor deposition apparatus of the present invention. (Embodiment 2)
FIG. 9 is a view showing a vapor deposition apparatus of the present invention. (Embodiment 2)
FIG. 10 is a view showing a container of the present invention. (Embodiment 3)
FIG. 11 is a view showing a container of the present invention. (Embodiment 3)
FIG. 12 is a view showing a vapor deposition source holder according to the present invention. (Embodiment 3)
FIG. 13 is a diagram showing a manufacturing system of the present invention. (Embodiment 4)
FIG. 14 is a view showing a transport container of the present invention. (Embodiment 4)
FIG. 15 is a view showing a vapor deposition apparatus of the present invention. (Embodiment 4)
FIG. 16 is a view showing a vapor deposition apparatus of the present invention. (Embodiment 4)
FIG 17 illustrates a light-emitting device of the present invention. Example 1
FIG. 18 shows a light-emitting device of the present invention. Example 1
FIG 19 shows a light-emitting device of the present invention. Example 1
FIG. 20 illustrates an example of an electronic device using the present invention.
FIG. 21 is a diagram showing an example of a manufacturing apparatus according to the present invention. (Embodiment 1)
FIG. 22 shows a conventional vapor deposition apparatus.

Claims (4)

A manufacturing apparatus having a load chamber, a transfer chamber connected to the load chamber, and a plurality of film forming chambers connected to the transfer chamber,
One of the plurality of film forming chambers is connected to an evacuation processing chamber for evacuating the film forming chamber, aligning means for aligning the mask and the substrate, a vapor deposition source, and heating for heating the vapor deposition source Means,
The vapor deposition source, the deposition source holder, and the container installed in the deposition source holder, provided in an opening portion above the container, sublimation of the eye or the size of and filter over passes the sublimated evaporation material The deposited material has a filter that does not pass through,
The filter is heated by first heating means surrounding the filter, and the container is heated by second heating means surrounding the container,
The said vapor deposition source has the shutter installed in the opening end of the said vapor deposition source holder, and blocks | closes between the said container and the said filter by closing the said shutter, The manufacturing apparatus characterized by the above-mentioned. A manufacturing apparatus having a load chamber, a transfer chamber connected to the load chamber, and a plurality of film forming chambers connected to the transfer chamber,
One of the plurality of film forming chambers is connected to an evacuation processing chamber for evacuating the film forming chamber, aligning means for aligning the mask and the substrate, a vapor deposition source, and heating for heating the vapor deposition source Means,
The vapor deposition source, the deposition source holder, and the container installed in the deposition source holder, provided in an opening portion above the container, sublimation of the eye or the size of and filter over passes the sublimated evaporation material The deposited material has a filter that does not pass through,
The filter is heated by first heating means surrounding the filter, and the container is heated by second heating means surrounding the container,
The vapor deposition source has a shutter installed at an opening end of the vapor deposition source holder, and closes the shutter, thereby blocking between the container and the filter,
The first heating means for heating the vapor deposition source and the second heating means for heating the filter have different power sources , respectively .   3. The manufacturing apparatus according to claim 1, wherein a heating temperature for heating the filter is lower than a heating temperature for heating the vapor deposition source.   4. The manufacturing apparatus according to claim 1, wherein the filter is made of a conductive material.

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