JP4945167B2 - 半導体発光素子の製造方法及び該製造方法により製造された半導体発光素子の実装方法 - Google Patents
半導体発光素子の製造方法及び該製造方法により製造された半導体発光素子の実装方法 Download PDFInfo
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- JP4945167B2 JP4945167B2 JP2006133443A JP2006133443A JP4945167B2 JP 4945167 B2 JP4945167 B2 JP 4945167B2 JP 2006133443 A JP2006133443 A JP 2006133443A JP 2006133443 A JP2006133443 A JP 2006133443A JP 4945167 B2 JP4945167 B2 JP 4945167B2
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 104
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 title claims description 26
- 239000000758 substrate Substances 0.000 claims abstract description 72
- 238000005520 cutting process Methods 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000007772 electrode material Substances 0.000 claims 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 54
- 229910000679 solder Inorganic materials 0.000 description 6
- 239000011247 coating layer Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005429 filling process Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Description
1a…基板層
1b…半導体エピ層
1c…PNジャンクション
2…凹部
3…マスク
4…半導体エピ層電極
5…表面電極
6…基板層電極
7…電極部
10…半導体発光装置
20…回路基板
21…パッド
Claims (5)
- 基板層上に当該基板層と平行な半導体発光層を有する半導体エピ層を備えた半導体発光装置製造方法において、
前記基板層表面に複数の基板層凹部を形成し、該基板層凹部に基板層電極を形成した後に基板層表面電極を形成する第一電極形成工程と、前記半導体エピ層表面に複数の半導体エピ層凹部を形成し、該半導体エピ層凹部に半導体エピ層電極を形成した後に半導体エピ層表面電極を形成する第二電極形成工程とを有し、前記基板層凹部と前記半導体エピ層凹部とが略対称の位置とされる正、負の電極形成工程と、
正極および負極の前記基板層電極および半導体エピ層電極の位置にて切断して個別化するダイシング工程とを備えた半導体発光装置の製造方法。 - 前記第一電極形成工程および第二電極形成工程の電極層の形成は、電極材料が充填され前記基板層および半導体エピ層表面を平坦化した後に、前記基板層表面電極および半導体エピ層表面電極を形成する、ことを特徴とする請求項1に記載の半導体発光装置の製造方法。
- 前記基板層凹部および半導体エピ層凹部は、前記基板層面内方向において適宜の間隔を隔てて複数の前記基板層凹部および半導体エピ層凹部が整列しており、前記ダイシング工程は、前記基板層面内方向に整列する前記基板層凹部および半導体エピ層凹部と、隣接する基板層凹部の間または半導体エピ層凹部の間の非凹部領域に切断して個別化するダイシング工程である、ことを特徴とする請求項1または請求項2に記載の半導体発光装置の製造方法。
- 前記基板層表面電極および半導体エピ層表面電極は、夫々前記基板層凹部および半導体エピ層凹部を覆い、ダイシングされる非凹部領域を覆わないように形成する、ことを特徴とする請求項3に記載の半導体発光装置の製造方法。
- 基板層上に当該基板層と平行な半導体発光層を有する半導体エピ層を備えた半導体発光装置を配線基板上に実装する実装方法において、
前記基板層表面および前記半導体エピ層表面に対峙するように凹部を形成し、前記凹部内に電極層を形成した後に、前記凹部および凹部周辺の非凹部領域を覆う表面電極を形成し、その後に前記基板層電極および半導体エピ層電極の位置にて切断して個別化して、
前記半導体発光層と平行な端面に設けられた正極および負極の表面電極と、前記半導体発光層と略直交方向とされ前記表面電極と接続する前記電極層を有する面実装型の半導体発光装置を形成し、
正極および負極の前記電極層が、前記配線基板の配線パターンに乗るように配置し、
次に前記半導体発光装置端面の表面電極と前記配線パターンとを電気的に接続することを特徴とする半導体発光装置の実装方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006133443A JP4945167B2 (ja) | 2006-05-12 | 2006-05-12 | 半導体発光素子の製造方法及び該製造方法により製造された半導体発光素子の実装方法 |
US11/677,097 US7691728B2 (en) | 2006-05-12 | 2007-02-21 | Semiconductor device and method for manufacturing the same |
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JP2006133443A JP4945167B2 (ja) | 2006-05-12 | 2006-05-12 | 半導体発光素子の製造方法及び該製造方法により製造された半導体発光素子の実装方法 |
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JP2007305829A JP2007305829A (ja) | 2007-11-22 |
JP4945167B2 true JP4945167B2 (ja) | 2012-06-06 |
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Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5227677B2 (ja) * | 2008-06-23 | 2013-07-03 | スタンレー電気株式会社 | Ledの実装構造、led光源及びこれを備えたバックライト装置 |
JP5262533B2 (ja) * | 2008-09-30 | 2013-08-14 | 豊田合成株式会社 | 半導体装置の製造方法 |
CN103137832B (zh) * | 2013-03-13 | 2017-03-15 | 深圳市晨日科技有限公司 | Led一体化制造工艺 |
TWI506813B (zh) * | 2013-04-09 | 2015-11-01 | Unity Opto Technology Co Ltd | Single crystal dual light source light emitting element |
CN104201269A (zh) * | 2014-08-29 | 2014-12-10 | 李媛 | 一种单侧电极芯片的led封装结构 |
Family Cites Families (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0530972B1 (en) * | 1991-08-02 | 1997-11-05 | Canon Kabushiki Kaisha | Liquid crystal image display unit |
US5643803A (en) * | 1992-09-18 | 1997-07-01 | Nippondenso Co., Ltd. | Production method of a semiconductor dynamic sensor |
DE4305296C3 (de) * | 1993-02-20 | 1999-07-15 | Vishay Semiconductor Gmbh | Verfahren zum Herstellen einer strahlungsemittierenden Diode |
JP3022049B2 (ja) | 1993-05-14 | 2000-03-15 | シャープ株式会社 | チップ部品型の発光ダイオードの実装方法 |
JPH08501663A (ja) * | 1993-07-07 | 1996-02-20 | ダイコネックス パテンテ アクチエンゲゼルシャフト | 構造化プリント回路基板および箔プリント回路基板、およびそれらの製造方法 |
US5418190A (en) * | 1993-12-30 | 1995-05-23 | At&T Corp. | Method of fabrication for electro-optical devices |
US5949118A (en) * | 1994-03-14 | 1999-09-07 | Nippondenso Co., Ltd. | Etching method for silicon substrates and semiconductor sensor |
CN1054941C (zh) * | 1994-05-16 | 2000-07-26 | 雷伊化学公司 | 有聚合物正温度系数电阻元件的电路保护器件 |
JPH0818087A (ja) * | 1994-07-05 | 1996-01-19 | Fuji Electric Co Ltd | 半導体光センサおよびその製造方法 |
JPH0936385A (ja) * | 1995-07-25 | 1997-02-07 | Nissan Motor Co Ltd | 半導体装置の製造方法 |
JP2907323B2 (ja) * | 1995-12-06 | 1999-06-21 | 日本電気株式会社 | 半導体装置およびその製造方法 |
JPH1012928A (ja) * | 1996-06-21 | 1998-01-16 | Stanley Electric Co Ltd | ワイヤーボンドレス面実装型led素子 |
DE69725689T2 (de) * | 1996-12-26 | 2004-04-29 | Matsushita Electric Industrial Co., Ltd., Kadoma | Gedruckte Leiterplatte und elektronische Bauteile |
AU7712098A (en) * | 1997-06-04 | 1998-12-21 | Tyco Electronics Corporation | Circuit protection devices |
US6201264B1 (en) * | 1999-01-14 | 2001-03-13 | Lumileds Lighting, U.S., Llc | Advanced semiconductor devices fabricated with passivated high aluminum content III-V materials |
US6838972B1 (en) * | 1999-02-22 | 2005-01-04 | Littelfuse, Inc. | PTC circuit protection devices |
DE69925837T2 (de) * | 1999-10-29 | 2005-10-27 | Sensonor Asa | Mikromechanischer Sensor |
TW511405B (en) * | 2000-12-27 | 2002-11-21 | Matsushita Electric Ind Co Ltd | Device built-in module and manufacturing method thereof |
US6995032B2 (en) * | 2002-07-19 | 2006-02-07 | Cree, Inc. | Trench cut light emitting diodes and methods of fabricating same |
US7367114B2 (en) * | 2002-08-26 | 2008-05-06 | Littelfuse, Inc. | Method for plasma etching to manufacture electrical devices having circuit protection |
US7132321B2 (en) * | 2002-10-24 | 2006-11-07 | The United States Of America As Represented By The Secretary Of The Navy | Vertical conducting power semiconductor devices implemented by deep etch |
WO2004066391A1 (ja) * | 2003-01-20 | 2004-08-05 | Mitsubishi Denki Kabushiki Kaisha | 半導体装置 |
JP2004319784A (ja) * | 2003-04-16 | 2004-11-11 | Sanyo Electric Co Ltd | 固体撮像素子及びその製造方法 |
JP2005159035A (ja) * | 2003-11-26 | 2005-06-16 | Sumitomo Electric Ind Ltd | 発光ダイオード及び発光装置 |
US7259411B1 (en) * | 2003-12-04 | 2007-08-21 | National Semiconductor Corporation | Vertical MOS transistor |
JP4049119B2 (ja) * | 2004-03-26 | 2008-02-20 | セイコーエプソン株式会社 | 強誘電体メモリ素子の製造方法 |
KR20070034005A (ko) * | 2004-06-23 | 2007-03-27 | 로무 가부시키가이샤 | 백색 발광 소자 및 그 제조 방법 |
JP2006278610A (ja) * | 2005-03-29 | 2006-10-12 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
JP5048230B2 (ja) * | 2005-03-30 | 2012-10-17 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置およびその製造方法 |
JP2007005568A (ja) * | 2005-06-23 | 2007-01-11 | Toshiba Corp | 半導体装置 |
JP2008066694A (ja) * | 2006-03-16 | 2008-03-21 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
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- 2006-05-12 JP JP2006133443A patent/JP4945167B2/ja not_active Expired - Fee Related
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- 2007-02-21 US US11/677,097 patent/US7691728B2/en not_active Expired - Fee Related
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JP2007305829A (ja) | 2007-11-22 |
US7691728B2 (en) | 2010-04-06 |
US20070262329A1 (en) | 2007-11-15 |
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Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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