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JP4840165B2 - Semiconductor device - Google Patents

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JP4840165B2
JP4840165B2 JP2007017552A JP2007017552A JP4840165B2 JP 4840165 B2 JP4840165 B2 JP 4840165B2 JP 2007017552 A JP2007017552 A JP 2007017552A JP 2007017552 A JP2007017552 A JP 2007017552A JP 4840165 B2 JP4840165 B2 JP 4840165B2
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heat radiating
hole
radiating plate
semiconductor device
plates
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JP2008186890A (en
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知巳 奥村
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Denso Corp
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  • Engineering & Computer Science (AREA)
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  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
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Description

本発明は、一対の放熱板の間に半導体素子を挟み込み、これらをモールド樹脂で封止してなる両面放熱型の半導体装置に関する。   The present invention relates to a double-sided heat radiation type semiconductor device in which a semiconductor element is sandwiched between a pair of heat radiation plates and these are sealed with a mold resin.

従来より、この種の半導体装置としては、互いの内面にて対向する第１の放熱板と第２の放熱板との間に、半導体素子を挟み込み、これら両放熱板および半導体素子を、成形金型に投入してモールド樹脂で包み込むように封止してなるものが提案されている（たとえば、特許文献１参照）。   Conventionally, as a semiconductor device of this type, a semiconductor element is sandwiched between a first heat radiating plate and a second heat radiating plate that are opposed to each other on the inner surface, and both the heat radiating plate and the semiconductor element are molded metal. There has been proposed one that is put into a mold and sealed so as to be wrapped with a mold resin (for example, see Patent Document 1).

そして、このような半導体装置においては、第１の放熱板および第２の放熱板のそれぞれにおける内面とは反対側の面である外面が、モールド樹脂から露出しており、それによって、半導体素子からの熱は、第１の放熱板と第２の放熱板から放熱されるようになっている。つまり、半導体素子の表裏両面からの放熱を可能としており、いわゆる両面放熱型の半導体装置となっている。   In such a semiconductor device, the outer surface, which is the surface opposite to the inner surface of each of the first heat radiating plate and the second heat radiating plate, is exposed from the mold resin. This heat is radiated from the first heat radiating plate and the second heat radiating plate. That is, heat radiation from both the front and back surfaces of the semiconductor element is possible, and a so-called double-sided heat radiation type semiconductor device is obtained.

ここで、従来では、放熱板に接合された半導体素子をモールド樹脂で封止する工程において、樹脂注入時の空気の巻きこみを防ぐため、樹脂の成形条件を調節したり、成形金型において樹脂を注入するゲート位置を調整する手法や、成形金型にエアベントを設けて空気を抜けやすくする手法が、一般に行われている。
特開２００５−１３６０１８号公報 Here, conventionally, in the process of sealing the semiconductor element bonded to the heat sink with a mold resin, in order to prevent air entrainment at the time of resin injection, the resin molding conditions are adjusted, or the resin is used in the molding die. In general, a method for adjusting the position of the gate to be injected and a method for providing an air vent in the molding die to make air easily escape.
JP 2005-136018 A

しかしながら、上記特許文献１に記載されているような２枚の放熱板に半導体素子が挟まれた構造の半導体装置においては、樹脂注入時の空気の巻きこみによって、両放熱板の間のモールド樹脂にボイドが発生しやすい。特に、両放熱板の間に、半導体素子が２素子以上実装されるような構造では、これら２素子の間にて空気が抜け切れず、ボイドとして残りやすい。   However, in a semiconductor device having a structure in which a semiconductor element is sandwiched between two heat sinks as described in Patent Document 1, voids are formed in the mold resin between both heat sinks due to air entrainment during resin injection. Likely to happen. In particular, in a structure in which two or more semiconductor elements are mounted between the two heat sinks, air cannot easily escape between these two elements and tends to remain as voids.

また、大型のモールドパッケージ（たとえば５０ｍｍ×４０ｍｍ×６ｍｍ程度以上）では、樹脂の硬化時間を考慮して、早く注入を行う必要があるため、樹脂を注入するゲートを複数設ける場合がある。しかし、この場合、樹脂が合流するところで空気が閉じ込められてしまい、最終的にボイドとなるという問題がある。   Further, in a large mold package (for example, about 50 mm × 40 mm × 6 mm or more), it is necessary to perform the injection quickly in consideration of the curing time of the resin, so that a plurality of gates for injecting the resin may be provided. However, in this case, there is a problem that air is confined at the place where the resin joins, and eventually becomes a void.

本発明は、上記問題に鑑みてなされたものであり、一対の放熱板の間に半導体素子を挟み込み、これらをモールド樹脂で封止してなる両面放熱型の半導体装置において、両放熱板の間にてモールド樹脂にボイドが発生するのを極力防止することを目的とする。   The present invention has been made in view of the above problems, and in a double-sided heat dissipation type semiconductor device in which a semiconductor element is sandwiched between a pair of heat dissipation plates and these are sealed with a mold resin, the mold resin is interposed between both heat dissipation plates. The purpose is to prevent the generation of voids as much as possible.

上記目的を達成するため、請求項１、８、９に記載の発明は、両放熱板（３、４）が対向している部位において両放熱板（３、４）の少なくとも一方の放熱板に、当該少なくとも一方の放熱板の内面（３ａ、４ａ）から外面（３ｂ、４ｂ）まで貫通する貫通穴（１１）を設けたことを特徴とする。 In order to achieve the above object, the invention according to claims 1, 8, and 9 is provided in at least one of the heat radiating plates (3, 4) at a portion where both the heat radiating plates (3, 4) face each other. A through hole (11) that penetrates from the inner surface (3a, 4a) to the outer surface (3b, 4b) of the at least one heat radiating plate is provided.

それによれば、樹脂封止時において、両放熱板（３、４）の間に入り込む樹脂の中に、空気が入り込んでも、両放熱板（３、４）の間から貫通穴（１１）を介して当該空気を排出できるため、両放熱板（３、４）の間にてモールド樹脂（７）にボイドが発生するのを極力防止することができる。また、貫通穴（１１）にモールド樹脂（７）が食い込むことにより放熱板（３、４）とモールド樹脂（７）との密着強度を向上させることが可能となる。
さらに、請求項１に記載の発明は、第１の放熱板（３）と第２の放熱板（４）は、それぞれ、単一の導電性板材からなり、半導体素子（１、２）は第１の放熱板（３）と第２の放熱板（４）との間に複数個挟まれており、貫通穴（１１）は、複数個の半導体素子（１、２）において隣り合う半導体素子（１、２）の間に位置するように設けられていることを特徴とする。
複数個の半導体素子（１、２）が存在する場合、隣り合う半導体素子（１、２）間ではボイドが発生しやすいが、当該半導体素子（１、２）間に貫通穴（１１）を設ければ、この半導体素子（１、２）間にて樹脂中の空気を排出しやすくなる。
請求項１に記載の発明においては、例えば、請求項５に記載のように、複数個の半導体素子（１、２）は、第１の半導体素子（１）としての絶縁ゲート型バイポーラトランジスタと、第２の半導体素子（２）としてのフライホイールダイオードとを有しており、
貫通穴（１１）は、第１、第２の半導体素子（１、２）の間に位置するように設けられている構成を採用できる。 According to this, even when air enters the resin that enters between the heat radiating plates (3, 4) during resin sealing, the air passes between the heat radiating plates (3, 4) through the through hole (11). Therefore, it is possible to prevent the occurrence of voids in the mold resin (7) between the heat radiating plates (3, 4) as much as possible. Moreover, it becomes possible to improve the adhesive strength of a heat sink (3, 4) and mold resin (7) by a mold resin (7) biting into a through-hole (11).
Further, in the first aspect of the present invention, the first heat radiating plate (3) and the second heat radiating plate (4) are each made of a single conductive plate material, and the semiconductor element (1, 2) is the first radiating plate. A plurality of the heat radiation plates (3) and the second heat radiation plate (4) are sandwiched between the plurality of semiconductor elements (1, 2). 1, 2).
When there are a plurality of semiconductor elements (1, 2), voids are likely to occur between adjacent semiconductor elements (1, 2), but a through hole (11) is provided between the semiconductor elements (1, 2). Then, it becomes easy to discharge the air in the resin between the semiconductor elements (1, 2).
In the invention described in claim 1, for example, as described in claim 5, the plurality of semiconductor elements (1, 2) include an insulated gate bipolar transistor as the first semiconductor element (1), A flywheel diode as a second semiconductor element (2),
A configuration in which the through hole (11) is provided so as to be positioned between the first and second semiconductor elements (1, 2) can be employed.

ここで、貫通穴（１１）は、両放熱板（３、４）が対向する部位において、両放熱板（３、４）のいずれか一方の放熱板にのみに設けられていてもよいし（後述の図９参照）、両方に設けられていてもよい（後述の図２、図５、図７、図８等参照）。   Here, the through hole (11) may be provided only in one of the heat radiating plates (3, 4) at a portion where both the heat radiating plates (3, 4) face each other ( 9 (described later) and may be provided in both (see FIGS. 2, 5, 7, 8, etc. described later).

また、両放熱板（３、４）の両方に貫通穴（１１）を設けた場合、樹脂封止時に両放熱板（３、４）の間から樹脂中の空気をスムーズに排出するという点を考慮すれば、第１の放熱板（３）に設けられた貫通穴（１１）と、第２の放熱板（４）に設けられた貫通穴（１１）とは、同じ位置にあること（後述の図２等参照）が好ましい。   Further, when the through holes (11) are provided in both the heat radiating plates (3, 4), the air in the resin is smoothly discharged from between the two heat radiating plates (3, 4) when the resin is sealed. In consideration, the through hole (11) provided in the first heat radiating plate (3) and the through hole (11) provided in the second heat radiating plate (4) are in the same position (described later). In FIG. 2).

また、請求項６、７、８、９に記載の発明では、貫通穴（１１）が、当該貫通穴（１１）が設けられている放熱板（３、４）の内面（３ａ、４ａ）から外面（３ｂ、４ｂ）に向かって拡がるテーパ形状をなすものや（後述の図５参照）、放熱板（３、４）の内面（３ａ、４ａ）と外面（３ｂ、４ｂ）との間に位置する中間部が絞られた鼓形状をなすもの（後述の図７参照）であることを特徴とする。 Moreover, in invention of Claim 6, 7, 8, 9, the through-hole (11) is from the inner surface (3a, 4a) of the heat sink (3, 4) in which the said through-hole (11) is provided. A taper shape that expands toward the outer surface (3b, 4b) (see FIG. 5 described later), or a position between the inner surface (3a, 4a) and the outer surface (3b, 4b) of the heat sink (3, 4) It is characterized by having a drum shape with a narrowed middle part (see FIG. 7 described later) .

モールド樹脂（７）と放熱板（３、４）との密着性を考慮すれば、貫通穴（１１）をこれらのテーパ形状や鼓形状とすることが好ましい。   Considering the adhesion between the mold resin (7) and the heat sink (3, 4), it is preferable that the through hole (11) has a tapered shape or a drum shape.

なお、特許請求の範囲およびこの欄で記載した各手段の括弧内の符号は、後述する実施形態に記載の具体的手段との対応関係を示す一例である。   In addition, the code | symbol in the bracket | parenthesis of each means described in the claim and this column is an example which shows a corresponding relationship with the specific means as described in embodiment mentioned later.

以下、本発明の実施形態について図に基づいて説明する。なお、以下の各実施形態相互において、互いに同一もしくは均等である部分には、説明の簡略化を図るべく、図中、同一符号を付してある。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, parts that are the same or equivalent to each other are given the same reference numerals in the drawings in order to simplify the description.

（第１実施形態）
図１は、本発明の第１実施形態に係る半導体装置１００の概略平面構成を示す図であり、図２は、図１中のＡ−Ａ線に沿った概略断面図である。この半導体装置１００は、たとえば自動車などの車両に搭載され、車両用電子装置を駆動するための装置として適用されるものである。 (First embodiment)
FIG. 1 is a diagram showing a schematic plan configuration of a semiconductor device 100 according to the first embodiment of the present invention, and FIG. 2 is a schematic cross-sectional view along the line AA in FIG. The semiconductor device 100 is mounted on a vehicle such as an automobile and is applied as a device for driving a vehicle electronic device.

図１、図２に示されるように、本半導体装置１００は、平面的に配置された２個の半導体素子１、２を備える。たとえば、第１の半導体素子１はＩＧＢＴ（絶縁ゲート型バイポーラトランジスタ）１であり、第２の半導体素子２は、ＦＷＤ（フライホイールダイオード）２である。   As shown in FIGS. 1 and 2, the semiconductor device 100 includes two semiconductor elements 1 and 2 arranged in a plane. For example, the first semiconductor element 1 is an IGBT (insulated gate bipolar transistor) 1, and the second semiconductor element 2 is an FWD (flywheel diode) 2.

そして、これら両半導体素子１、２の両面は、半導体素子１、２の電極および放熱部材として機能する一対の放熱板３、４にて挟まれている。これら放熱板３、４は、一般的なリードフレーム材料などよりなるもので、たとえば、銅合金にニッケルメッキを施した板材により構成されている。   Then, both surfaces of both semiconductor elements 1 and 2 are sandwiched between a pair of heat radiation plates 3 and 4 that function as electrodes of the semiconductor elements 1 and 2 and a heat radiation member. These heat sinks 3 and 4 are made of a general lead frame material or the like, and are made of, for example, a plate material obtained by applying nickel plating to a copper alloy.

ここで、一対の放熱板３、４は、互いの内面３ａ、４ａにて対向するように配置されているが、図２において、一対の放熱板３、４のうち上側に位置する放熱板３を、第１の放熱板３とし、下側に位置する放熱板４を、第２の放熱板４とする。また、各放熱板３、４において、内面３ａ、４ａとは反対側の面である外面３ｂ、４ｂは放熱面として構成されている。   Here, although a pair of heat sinks 3 and 4 are arrange | positioned so that it may mutually oppose on inner surface 3a, 4a, in FIG. Is the first heat radiating plate 3, and the heat radiating plate 4 located on the lower side is the second heat radiating plate 4. Further, in each of the heat radiating plates 3 and 4, outer surfaces 3b and 4b which are surfaces opposite to the inner surfaces 3a and 4a are configured as heat radiating surfaces.

ここでは、両放熱板３、４は平面略矩形の板であるが、第１の放熱板３は、第２の放熱板４よりも一回り大きな平面サイズを有するものであり、第１の放熱板３の周辺部が第２の放熱板４の端部からはみ出している。   Here, although both the heat sinks 3 and 4 are plane substantially rectangular boards, the 1st heat sink 3 has a plane size one size larger than the 2nd heat sink 4, and is 1st heat dissipation. The periphery of the plate 3 protrudes from the end of the second heat radiating plate 4.

そして、図２に示されるように、第１の放熱板３と第２の放熱板４とが重なり合って両内面３ａ、４ａ同士が正対している領域Ｒ１が、両放熱板３、４が対向している部位Ｒ１であり、第１の放熱板３の周辺部が第２の放熱板４の端部からはみ出している領域Ｒ２が、両放熱板３、４が対向していない部位Ｒ２である。   As shown in FIG. 2, the region R1 in which the first heat radiating plate 3 and the second heat radiating plate 4 overlap and the inner surfaces 3a and 4a face each other is opposed to the heat radiating plates 3 and 4 facing each other. The region R2 in which the peripheral portion of the first heat radiating plate 3 protrudes from the end of the second heat radiating plate 4 is the portion R2 where the heat radiating plates 3 and 4 do not face each other. .

そして、両半導体素子１、２は、これら両放熱板３、４の内面の間に挟まれており、両半導体素子１、２の一面と第１の放熱板３の内面３ａとの間は、はんだ５によって電気的・熱的に接続されている。また、両半導体素子１、２の他面と第２の放熱板４との間には、ブロック体６が介在している。   The two semiconductor elements 1 and 2 are sandwiched between the inner surfaces of the heat radiating plates 3 and 4, and the space between one surface of both the semiconductor elements 1 and 2 and the inner surface 3 a of the first heat radiating plate 3 is Electrically and thermally connected by solder 5. A block body 6 is interposed between the other surfaces of the semiconductor elements 1 and 2 and the second heat radiating plate 4.

このブロック体６は、電気導電性、熱伝導性に優れた矩形ブロック状のもので、通常銅からなるが、モリブデンなどを用いてもよい。そして、各半導体素子１、２とブロック体６との間、および、ブロック体６と第２の放熱板４の内面との間は、それぞれ、はんだ５によって電気的・熱的に接続されている。   The block body 6 is a rectangular block having excellent electrical conductivity and thermal conductivity, and is usually made of copper, but molybdenum or the like may be used. And between each semiconductor element 1 and 2 and the block body 6, and between the block body 6 and the inner surface of the 2nd heat sink 4, it is electrically and thermally connected by the solder 5, respectively. .

ここで、上記の各部を接続するはんだ５は、一般的な半導体装置の分野にて採用されるはんだ材料とすることができ、たとえば、すず−銅合金系はんだなどの鉛フリーはんだを採用することができる。   Here, the solder 5 that connects the above-mentioned parts can be a solder material that is employed in the field of general semiconductor devices. For example, a lead-free solder such as a tin-copper alloy solder is employed. Can do.

そして、図１、図２に示されるように、本実施形態の半導体装置１００においては、一対の放熱板３、４およびこれに挟み込まれた半導体素子１、２、ブロック体６が、モールド樹脂７にて封止されている。このモールド樹脂７はエポキシ樹脂などの通常のモールド材料よりなり、成形金型を用いた樹脂成形によって作製されたものである。   As shown in FIGS. 1 and 2, in the semiconductor device 100 of the present embodiment, the pair of heat sinks 3, 4 and the semiconductor elements 1, 2 and the block body 6 sandwiched between them are molded resin 7. It is sealed with. This mold resin 7 is made of a normal mold material such as an epoxy resin, and is produced by resin molding using a molding die.

また、図１に示されるように、一対の放熱板３、４のそれぞれにおいて外面３ｂ、４ｂが、モールド樹脂７から露出している。これにより、本半導体装置１００は、第１および第２の半導体素子１、２の両面のそれぞれにて、第１の放熱板３、第２の放熱板４を介した放熱が行われる両面放熱型の構成となっている。   As shown in FIG. 1, the outer surfaces 3 b and 4 b are exposed from the mold resin 7 in each of the pair of heat sinks 3 and 4. Thereby, this semiconductor device 100 is a double-sided heat radiation type in which heat is radiated through the first heat sink 3 and the second heat sink 4 on both surfaces of the first and second semiconductor elements 1 and 2. It becomes the composition of.

また、一対の放熱板３、４は、はんだ５やブロック体６を介して、両半導体素子１、２の各面の図示しない電極に電気的に接続されている。たとえば、第１の放熱板３、第２の放熱板４は、それぞれ、第１の半導体素子１としてのＩＧＢＴ１のコレクタ側の電極および第２の半導体素子２としてのＦＷＤ２のカソード側の電極、ＩＧＢＴのエミッタ側の電極およびＦＷＤのアノード側の電極となるものである。   The pair of heat sinks 3 and 4 are electrically connected to electrodes (not shown) on the respective surfaces of the semiconductor elements 1 and 2 via the solder 5 and the block body 6. For example, the first heat radiating plate 3 and the second heat radiating plate 4 are respectively an electrode on the collector side of the IGBT 1 as the first semiconductor element 1 and an electrode on the cathode side of the FWD 2 as the second semiconductor element 2. The emitter side electrode and the FWD anode side electrode.

そして、図示しない端子が、第１の放熱板３および第２の放熱板４のそれぞれと一体に形成されており、各放熱板３、４はこの端子を介して外部と電気的に接続できるようになっている。   A terminal (not shown) is formed integrally with each of the first heat radiating plate 3 and the second heat radiating plate 4 so that each of the heat radiating plates 3 and 4 can be electrically connected to the outside through this terminal. It has become.

また、図示しないが、モールド樹脂７の内部にてＩＧＢＴ１の周囲には、放熱板３、４とは別体のリードフレームからなる制御端子が設けられている。この制御端子は、ＩＧＢＴ１のゲート端子や各種の検査用端子などとして構成されるものであり、モールド樹脂７内において、図示しないボンディングワイヤを介して、ＩＧＢＴ１と電気的に接続されている。   Although not shown, a control terminal made of a lead frame separate from the heat sinks 3 and 4 is provided around the IGBT 1 inside the mold resin 7. This control terminal is configured as a gate terminal of IGBT 1, various inspection terminals, and the like, and is electrically connected to IGBT 1 through a bonding wire (not shown) in mold resin 7.

このような構成において、第２の放熱板４と半導体素子１、２との間に介在するブロック体６は、このＩＧＢＴ１と上記制御端子とのワイヤボンディングを行うにあたって、上記ワイヤの高さを維持するために、ＩＧＢＴ１のワイヤボンディング面と第２の放熱板４との間の高さを確保している。   In such a configuration, the block body 6 interposed between the second heat sink 4 and the semiconductor elements 1 and 2 maintains the height of the wire when wire bonding is performed between the IGBT 1 and the control terminal. Therefore, the height between the wire bonding surface of the IGBT 1 and the second heat radiating plate 4 is secured.

また、図２に示されるように、第２の放熱板４の内面４ａのうちはんだ５が設置される領域の外周には、このはんだ５の広がりを防止するための溝であるはんだ溝１０が設けられている。このはんだ溝１０は、それぞれ対応するブロック体６の平面サイズよりも一回り大きな環状の溝として構成されている。   In addition, as shown in FIG. 2, a solder groove 10 that is a groove for preventing the solder 5 from spreading is formed on the outer periphery of a region where the solder 5 is installed in the inner surface 4 a of the second heat radiating plate 4. Is provided. Each solder groove 10 is configured as an annular groove that is slightly larger than the planar size of the corresponding block body 6.

このような半導体装置１００において、本実施形態では、図１、図２に示されるように、第１の放熱板３には、第１の放熱板３の内面３ａから外面３ｂまで貫通する貫通穴１１が設けられており、また、第２の放熱板４にも、第２の放熱板４の内面４ａから外面４ｂまで貫通する貫通穴１１が設けられている。   In such a semiconductor device 100, in the present embodiment, as shown in FIGS. 1 and 2, the first heat radiating plate 3 has a through hole penetrating from the inner surface 3 a to the outer surface 3 b of the first heat radiating plate 3. 11 is also provided, and the second heat radiating plate 4 is also provided with a through hole 11 penetrating from the inner surface 4a to the outer surface 4b of the second heat radiating plate 4.

つまり、両放熱板３、４の両方に、それぞれ厚さ方向に貫通する貫通穴１１が設けられている。ここで、貫通穴１１は、上記図２に示した両放熱板３、４が対向している部位Ｒ１において、両放熱板３、４に設けることが必須であり、両放熱板３、４が対向していない部位Ｒ２には、貫通穴１１は設けても設けなくてもよい。   That is, both the heat sinks 3 and 4 are provided with through holes 11 penetrating in the thickness direction. Here, it is essential to provide the through hole 11 in both the heat radiating plates 3 and 4 in the portion R1 where the both heat radiating plates 3 and 4 shown in FIG. The through hole 11 may or may not be provided in the portion R2 that is not opposed.

このような貫通穴１１は、放熱板３、４にプレス加工などを施すことにより形成されるものである。ここでは、図１に示されるように、貫通穴１１の開口形状は円形、すなわち丸穴形状としている。   Such a through hole 11 is formed by subjecting the heat sinks 3 and 4 to press working or the like. Here, as shown in FIG. 1, the opening shape of the through hole 11 is circular, that is, a round hole shape.

また、本実施形態では、図２に示されるように、この貫通穴１１の内部にモールド樹脂７が充填されている。つまり、貫通穴１１にモールド樹脂７が入り込んでいる。ここでは、貫通穴１１の深さ方向の全体にモールド樹脂７が入り込んでいるが、貫通穴１１の内面３ａ側から深さ方向の途中部分まで、モールド樹脂７が入り込んだものであってもよいし、貫通穴１１にモールド樹脂７が入り込んでいなくてもよい。   In the present embodiment, as shown in FIG. 2, the mold resin 7 is filled in the through hole 11. That is, the mold resin 7 enters the through hole 11. Here, the mold resin 7 enters the entire depth direction of the through hole 11, but the mold resin 7 may enter from the inner surface 3 a side of the through hole 11 to the middle portion in the depth direction. However, the mold resin 7 may not enter the through hole 11.

また、図２に示されるように、第１の放熱板３に設けられた貫通穴１１と第２の放熱板４に設けられた貫通穴１１とは、互いに正対する位置に設けられている。つまり、貫通穴１１は、互いの放熱板３、４において同じ位置に設けられている。   As shown in FIG. 2, the through hole 11 provided in the first heat radiating plate 3 and the through hole 11 provided in the second heat radiating plate 4 are provided at positions facing each other. That is, the through holes 11 are provided at the same positions in the heat radiating plates 3 and 4.

そして、本実施形態では、半導体素子１、２は、第１の放熱板３と第２の放熱板４との間に２個挟まれているが、第１の放熱板３および第２の放熱板４に設けられた各貫通穴１１は、隣り合う２個の半導体素子１、２の間に位置している。具体的には、図１中の一点鎖線Ａ−Ａが当該２個の半導体素子１、２を結ぶ仮想直線に相当するが、貫通穴１１は、隣り合う２個の半導体素子１、２間にて当該仮想直線上に位置する。   In the present embodiment, two semiconductor elements 1 and 2 are sandwiched between the first heat radiating plate 3 and the second heat radiating plate 4, but the first heat radiating plate 3 and the second heat radiating plate 3 are disposed. Each through hole 11 provided in the plate 4 is located between two adjacent semiconductor elements 1 and 2. Specifically, the alternate long and short dash line AA in FIG. 1 corresponds to a virtual straight line connecting the two semiconductor elements 1 and 2, but the through-hole 11 is formed between two adjacent semiconductor elements 1 and 2. Located on the virtual straight line.

次に、上記半導体装置１００の製造方法について、図３を参照して述べる。図３は、本製造方法における樹脂封止工程を示す概略断面図である。まず、上記図１、図２においてモールド樹脂７が無いもの、すなわち、モールド樹脂７によって樹脂封止されるワークＷ（図３参照）を作製する。   Next, a method for manufacturing the semiconductor device 100 will be described with reference to FIG. FIG. 3 is a schematic cross-sectional view showing a resin sealing step in the present manufacturing method. First, in FIG. 1 and FIG. 2, a workpiece without mold resin 7, that is, a workpiece W (see FIG. 3) that is resin-sealed with mold resin 7 is produced.

このワークＷは、第１の放熱板３、半導体素子１、２、ブロック体６、第２の放熱板４を、はんだ５を介して積層し接合するとともに、上記制御端子とＩＧＢＴ１との間でワイヤボンディングを行うことにより、作製される。   The workpiece W is formed by laminating and joining the first heat radiating plate 3, the semiconductor elements 1, 2, the block body 6, and the second heat radiating plate 4 via the solder 5, and between the control terminal and the IGBT 1. It is manufactured by performing wire bonding.

次に、このワークＷをモールド樹脂７により封止する。この樹脂封止は、一般的なトランスファーモールド法に用いられる成形金型を用いて行われる。なお、図３では、樹脂注入の途中の状態が示されているが、当該成形金型は省略してある。この成形金型は、半導体装置１００におけるモールド樹脂７の外形に実質的に一致した形状のキャビティを有するもので、このキャビティ内にワークＷをセットし、樹脂充填を行う。   Next, the workpiece W is sealed with the mold resin 7. This resin sealing is performed using a molding die used in a general transfer molding method. FIG. 3 shows a state in the middle of resin injection, but the molding die is omitted. This molding die has a cavity having a shape substantially corresponding to the outer shape of the mold resin 7 in the semiconductor device 100, and a workpiece W is set in the cavity to perform resin filling.

図３に示されるように、ワークＷの一方の端部側からモールド樹脂７が充填されていき、ワークＷが封止されていく。このとき、本実施形態では、両放熱板３、４の間に入り込むモールド樹脂７の中に空気が入り込んでも、当該空気は、図３中の矢印に示されるように、両放熱板３、４の両方に設けられた貫通穴１１を介して、両放熱板３、４の間から追い出される。   As shown in FIG. 3, the mold resin 7 is filled from one end side of the workpiece W, and the workpiece W is sealed. At this time, in the present embodiment, even if air enters the mold resin 7 that enters between the heat radiating plates 3 and 4, as shown by the arrows in FIG. Are expelled from between the two heat sinks 3 and 4 through the through-holes 11 provided in both.

そして、この樹脂封止工程の終了後、必要に応じて、両放熱板３、４の外面３ｂ、４ｂに付着した樹脂のバリを除去する工程などを行うことにより、本実施形態の半導体装置１００ができあがる。   Then, after the resin sealing step is completed, the semiconductor device 100 according to the present embodiment is performed by removing a resin burr attached to the outer surfaces 3b and 4b of the heat radiating plates 3 and 4 as necessary. Is completed.

ところで、本実施形態によれば、両面放熱型の半導体装置１００において、第１の放熱板３および第２の放熱板４のそれぞれに、内面３ａ、４ａから外面３ｂ、４ｂまで貫通する貫通穴１１を設けている。   By the way, according to the present embodiment, in the double-sided heat dissipation type semiconductor device 100, the through holes 11 that penetrate the first heat dissipation plate 3 and the second heat dissipation plate 4 from the inner surfaces 3a, 4a to the outer surfaces 3b, 4b, respectively. Is provided.

そのため、樹脂封止時において、両放熱板３、４の間に入り込むモールド樹脂７の中に空気が入り込んでも、上述したように、貫通穴１１を介して当該空気を排出できる。そのため、両放熱板３、４の間にてモールド樹脂７への空気の巻き込みが防止され、ボイドの発生が極力防止される。   Therefore, at the time of resin sealing, even if air enters the mold resin 7 that enters between the heat radiating plates 3 and 4, the air can be discharged through the through hole 11 as described above. For this reason, air is prevented from being caught in the mold resin 7 between the heat radiating plates 3 and 4, and generation of voids is prevented as much as possible.

また、図２に示したように、この貫通穴１１にモールド樹脂７が食い込んだ状態となり、各放熱板３、４とモールド樹脂７との密着強度が向上する。つまり、本実施形態によれば、貫通穴１１がいわゆるロックホールの機能を果たすため、信頼性に優れた半導体装置１００が提供される。   Further, as shown in FIG. 2, the mold resin 7 enters the through hole 11, and the adhesion strength between the heat radiating plates 3 and 4 and the mold resin 7 is improved. That is, according to this embodiment, since the through hole 11 functions as a so-called lock hole, the semiconductor device 100 having excellent reliability is provided.

また、本実施形態では、第１の放熱板３側の貫通穴１１と第２の放熱板４側の貫通穴１１とを同じ位置にあるものとしているため、樹脂封止時において両放熱板３、４の間からモールド樹脂７中の空気をスムーズに排出される。   Moreover, in this embodiment, since the through hole 11 on the first heat radiating plate 3 side and the through hole 11 on the second heat radiating plate 4 side are at the same position, both the heat radiating plates 3 are sealed during resin sealing. 4, the air in the mold resin 7 is discharged smoothly.

また、本実施形態では、空気の巻きこみボイドが発生しやすい２個の半導体素子１、２に挟まれた領域に貫通穴１１を設けているため、当該半導体素子１、２間にてモールド樹脂７中の空気を、両放熱板３、４の間から排出しやすくなり、ボイドの発生を防止するという点で効果的である。   In the present embodiment, since the through hole 11 is provided in a region sandwiched between two semiconductor elements 1 and 2 that are likely to generate air entrainment voids, the mold resin 7 is interposed between the semiconductor elements 1 and 2. This is effective in that the air inside can be easily discharged from between the heat radiating plates 3 and 4 and the generation of voids is prevented.

（第２実施形態）
図４は、本発明の第２実施形態に係る半導体装置１０１の概略平面構成を示す図であり、図５は、図４中のＢ−Ｂ線に沿った概略断面図である。本実施形態は、上記第１実施形態に示した半導体装置において、貫通穴１１の形状を変形したものであり、貫通穴１１による効果は上記第１実施形態と同様に発揮される。 (Second Embodiment)
FIG. 4 is a diagram showing a schematic plan configuration of a semiconductor device 101 according to the second embodiment of the present invention, and FIG. 5 is a schematic cross-sectional view along the line BB in FIG. The present embodiment is obtained by modifying the shape of the through hole 11 in the semiconductor device shown in the first embodiment, and the effect of the through hole 11 is exhibited in the same manner as in the first embodiment.

上記第１実施形態では、上記図１および図２に示したように、貫通穴１１は深さ方向の全体に渡って径が同一のストレートな穴形状であった。それに対して、本実施形態では、図４および図５に示されるように、貫通穴１１は、深さ方向に沿った断面形状がテーパ形状となっている。具体的には、貫通穴１１は、当該貫通穴１１が設けられている各放熱板３、４の内面３ａ、４ａから外面３ｂ、４ｂに向かって径が拡がっている。   In the first embodiment, as shown in FIGS. 1 and 2, the through hole 11 has a straight hole shape having the same diameter throughout the depth direction. On the other hand, in this embodiment, as shown in FIGS. 4 and 5, the through hole 11 has a tapered cross-sectional shape along the depth direction. Specifically, the diameter of the through hole 11 is increased from the inner surface 3a, 4a of each heat radiating plate 3, 4 provided with the through hole 11 toward the outer surface 3b, 4b.

このようなテーパ形状の貫通穴１１とすれば、上記図２に示したようなストレート形状の貫通穴１１に比べて、モールド樹脂７と放熱板３、４との密着強度が向上し、温度変化などによってモールド樹脂７の熱膨張・収縮が発生しても、モールド樹脂７の剥離を極力抑制することができる。   If such a tapered through hole 11 is used, the adhesion strength between the mold resin 7 and the heat sinks 3 and 4 is improved as compared to the straight through hole 11 as shown in FIG. Even if thermal expansion / contraction of the mold resin 7 occurs due to the above, peeling of the mold resin 7 can be suppressed as much as possible.

（第３実施形態）
図６は、本発明の第３実施形態に係る半導体装置１０２の概略平面構成を示す図であり、図７は、図６中のＣ−Ｃ線に沿った概略断面図である。本実施形態も、上記第１実施形態に示した半導体装置において、貫通穴１１の形状を変形したものである。 (Third embodiment)
FIG. 6 is a diagram showing a schematic plan configuration of a semiconductor device 102 according to the third embodiment of the present invention, and FIG. 7 is a schematic cross-sectional view along the line CC in FIG. This embodiment is also a modification of the shape of the through hole 11 in the semiconductor device shown in the first embodiment.

図６および図７に示されるように、本実施形態では、貫通穴１１は、深さ方向に沿った断面形状がくびれた鼓形状をなしている。ここでは、貫通穴１１の鼓形状は、当該貫通穴１１が設けられている各放熱板３、４の内面３ａ、４ａと外面３ｂ、４ｂとの間に位置する中間部が絞られた形状となっている。   As shown in FIG. 6 and FIG. 7, in the present embodiment, the through hole 11 has a drum shape with a narrow cross-sectional shape along the depth direction. Here, the drum shape of the through hole 11 is a shape in which an intermediate portion located between the inner surfaces 3a, 4a and the outer surfaces 3b, 4b of the heat radiation plates 3, 4 provided with the through hole 11 is narrowed. It has become.

このような鼓形状の貫通穴１１は、たとえば、放熱板３、４の内面３ａ、４ａ側と外面３ｂ、４ｂ側の両面側からプレス加工を行うことにより形成される。そして、この場合も、モールド樹脂７と放熱板３、４との密着強度の向上が図れ、上記第２実施形態と同様の効果が発揮される。   Such a drum-shaped through-hole 11 is formed by, for example, pressing from the inner surfaces 3a, 4a side and the outer surfaces 3b, 4b side of the radiator plates 3, 4. Also in this case, the adhesion strength between the mold resin 7 and the heat sinks 3 and 4 can be improved, and the same effect as in the second embodiment can be exhibited.

（第４実施形態）
図８は、本発明の第４実施形態に係る半導体装置１０３の概略断面構成を示す図である。両放熱板３、４の両方に貫通穴１１がある場合、上記実施形態のように互いの貫通穴１１が同じ位置でなくてもよく、図８に示されるように、互いの貫通穴１１が正対せずに異なる位置にあってもよい。 (Fourth embodiment)
FIG. 8 is a diagram showing a schematic cross-sectional configuration of a semiconductor device 103 according to the fourth embodiment of the present invention. When both the heat sinks 3 and 4 have the through holes 11, the through holes 11 do not have to be at the same position as in the above-described embodiment, and as shown in FIG. You may be in a different position without facing up.

もちろん、この場合も、両放熱板３、４の間にてモールド樹脂７にボイドが発生するのを極力防止することができ、また、貫通穴１１のロックホール機能により放熱板３、４とモールド樹脂７との密着強度を向上させることが可能となる。   Of course, in this case as well, it is possible to prevent the occurrence of voids in the mold resin 7 between the heat radiating plates 3 and 4 and the heat radiating plates 3 and 4 and the mold by the lock hole function of the through hole 11. The adhesion strength with the resin 7 can be improved.

（第５実施形態）
図９は、本発明の第５実施形態に係る半導体装置１０４の概略断面構成を示す図である。上記各実施形態では、貫通穴１１は、両放熱板３、４の両方に設けられていたが、このように、両放熱板３、４のいずれか一方にのみ設けられていてもよい。 (Fifth embodiment)
FIG. 9 is a diagram showing a schematic cross-sectional configuration of a semiconductor device 104 according to the fifth embodiment of the present invention. In each said embodiment, although the through-hole 11 was provided in both the both heat sinks 3 and 4, it may be provided only in either one of the both heat sinks 3 and 4 in this way.

図９では、両放熱板３、４のうち第１の放熱板３にのみ貫通穴１１を設けている。もちろん、図示しないが、第２の放熱板４にのみ貫通穴１１を設けてもよい。本実施形態の場合も、貫通穴１１による空気排出機能およびロックホール機能が発揮され、ボイドの発生防止および樹脂密着強度の向上が可能となる。   In FIG. 9, the through-hole 11 is provided only in the first heat radiating plate 3 of both the heat radiating plates 3 and 4. Of course, though not shown, the through hole 11 may be provided only in the second heat radiating plate 4. Also in the case of this embodiment, the air discharge function and the lock hole function by the through hole 11 are exhibited, and it becomes possible to prevent the generation of voids and improve the resin adhesion strength.

（他の実施形態）
なお、貫通穴１１の開口形状は、上記各図に示したような丸穴形状に限定されるものではなく、楕円形の穴形状、多角形の穴形状、細長のスリット形状など、空気抜き用として機能するものであれば、どのような形状であってもよい。また、片方の放熱板について貫通穴１１を複数個設けてもよい。 (Other embodiments)
In addition, the opening shape of the through hole 11 is not limited to the round hole shape as shown in each of the above drawings, but is used for air venting such as an elliptical hole shape, a polygonal hole shape, and an elongated slit shape. Any shape may be used as long as it functions. Moreover, you may provide multiple through-holes 11 about one heat sink.

また、一対の金属板３、４に挟まれる半導体素子としては、両面に配置される一対の金属板３、４を電極や放熱板として用いることが可能なものであれば、上記したＩＧＢＴ１やＦＷＤ２でなくてもよい。また、半導体素子は２個に限定されるものではなく、１個でもよいし、３個以上でもよい。   Further, as the semiconductor element sandwiched between the pair of metal plates 3 and 4, as long as the pair of metal plates 3 and 4 arranged on both surfaces can be used as an electrode or a heat sink, the above-described IGBT 1 or FWD 2 is used. Not necessarily. Further, the number of semiconductor elements is not limited to two, but may be one or three or more.

そして、半導体素子が３個以上ある場合は、貫通穴１１を、隣り合う半導体素子の間にそれぞれ設ければよい。貫通穴１１のサイズや個数は、製品の熱抵抗が許す範囲で大きく且つ多い方が有利である。   And when there are three or more semiconductor elements, the through holes 11 may be provided between adjacent semiconductor elements. It is advantageous that the size and number of the through holes 11 are large and large as long as the thermal resistance of the product allows.

また、上述したように、ヒートシンクブロック６は、ＩＧＢＴ１と第２の金属板４との間に介在し、これら両部材１、４との間の高さを確保する役割を有するものであるが、可能であるならば、上記実施形態において、ヒートシンクブロック６は存在しないものであってもよい。つまり、半導体装置としては、一対の放熱板の間に半導体素子を挟み込んだ構成を有していればよい。   Further, as described above, the heat sink block 6 is interposed between the IGBT 1 and the second metal plate 4 and has a role of ensuring the height between the members 1 and 4. If possible, in the above embodiment, the heat sink block 6 may not exist. That is, the semiconductor device may have a configuration in which a semiconductor element is sandwiched between a pair of heat sinks.

本発明の第１実施形態に係る半導体装置の概略平面図である。1 is a schematic plan view of a semiconductor device according to a first embodiment of the present invention. 図１中のＡ−Ａ概略断面図である。It is an AA schematic sectional drawing in FIG. 第１実施形態に係る半導体装置の製造方法における樹脂封止工程を示す概略断面図である。It is a schematic sectional drawing which shows the resin sealing process in the manufacturing method of the semiconductor device which concerns on 1st Embodiment. 本発明の第２実施形態に係る半導体装置の概略平面図である。It is a schematic plan view of the semiconductor device which concerns on 2nd Embodiment of this invention. 図４中のＢ−Ｂ概略断面図である。It is a BB schematic sectional drawing in FIG. 本発明の第３実施形態に係る半導体装置の概略平面図である。It is a schematic plan view of the semiconductor device which concerns on 3rd Embodiment of this invention. 図６中のＣ−Ｃ概略断面図である。It is CC schematic sectional drawing in FIG. 本発明の第４実施形態に係る半導体装置の概略断面図である。It is a schematic sectional drawing of the semiconductor device which concerns on 4th Embodiment of this invention. 本発明の第５実施形態に係る半導体装置の概略断面図である。It is a schematic sectional drawing of the semiconductor device which concerns on 5th Embodiment of this invention.

符号の説明Explanation of symbols

１…半導体素子としてのＩＧＢＴ、２…半導体素子としてのＦＷＤ、
３…第１の放熱板、３ａ…第１の放熱板の内面、３ｂ…第１の放熱板の外面、
４…第２の放熱板、４ａ…第２の放熱板の内面、４ｂ…第２の放熱板の外面、
７…モールド樹脂、１１…貫通穴。 DESCRIPTION OF SYMBOLS 1 ... IGBT as a semiconductor element, 2 ... FWD as a semiconductor element,
3 ... 1st heat sink, 3a ... Inner surface of 1st heat sink, 3b ... Outer surface of 1st heat sink,
4 ... 2nd heat sink, 4a ... inner surface of 2nd heat sink, 4b ... outer surface of 2nd heat sink,
7: Mold resin, 11: Through hole.

Claims (9)

互いの内面（３ａ、４ａ）にて対向する第１の放熱板（３）と第２の放熱板（４）との間に、半導体素子（１、２）を挟み込み、
これら両放熱板（３、４）および半導体素子（１、２）を包み込むようにモールド樹脂（７）で封止するとともに、前記両放熱板（３、４）における前記内面（３ａ、４ａ）とは反対側の外面（３ｂ、４ｂ）を前記モールド樹脂（７）から露出させてなる半導体装置において、
前記両放熱板（３、４）が対向している部位において前記両放熱板（３、４）の少なくとも一方の放熱板には、当該少なくとも一方の放熱板の前記内面（３ａ、４ａ）から前記外面（３ｂ、４ｂ）まで貫通する貫通穴（１１）が設けられており、
前記第１の放熱板（３）と前記第２の放熱板（４）は、それぞれ、単一の導電性板材からなり、
前記半導体素子（１、２）は前記第１の放熱板（３）と前記第２の放熱板（４）との間に複数個挟まれており、
前記貫通穴（１１）は、これら複数個の半導体素子（１、２）において隣り合う半導体素子（１、２）の間に位置するように設けられていることを特徴とする半導体装置。 The semiconductor element (1, 2) is sandwiched between the first heat radiating plate (3) and the second heat radiating plate (4) facing each other on the inner surfaces (3a, 4a),
The heat radiating plates (3, 4) and the semiconductor element (1, 2) are sealed with a mold resin (7) so as to wrap, and the inner surfaces (3a, 4a) of the heat radiating plates (3, 4) In the semiconductor device in which the outer surface (3b, 4b) on the opposite side is exposed from the mold resin (7),
At a portion where the heat radiating plates (3, 4) are opposed to each other, at least one heat radiating plate of the two heat radiating plates (3, 4) is formed from the inner surface (3a, 4a) of the at least one heat radiating plate. There is a through hole (11) that penetrates to the outer surface (3b, 4b) ,
The first heat radiating plate (3) and the second heat radiating plate (4) are each made of a single conductive plate material,
A plurality of the semiconductor elements (1, 2) are sandwiched between the first heat radiating plate (3) and the second heat radiating plate (4),
The semiconductor device, wherein the through hole (11) is provided so as to be positioned between adjacent semiconductor elements (1, 2) in the plurality of semiconductor elements (1, 2) . 前記貫通穴（１１）は、前記両放熱板（３、４）のいずれか一方の放熱板にのみ設けられていることを特徴とする請求項１に記載の半導体装置。   The semiconductor device according to claim 1, wherein the through hole (11) is provided only in one of the heat radiating plates (3, 4). 前記貫通穴（１１）は、前記両放熱板（３、４）の両方の放熱板に設けられていることを特徴とする請求項１に記載の半導体装置。   The semiconductor device according to claim 1, wherein the through hole (11) is provided in both heat radiation plates of the heat radiation plates (3, 4). 前記第１の放熱板（３）に設けられた前記貫通穴（１１）と、前記第２の放熱板（４）に設けられた前記貫通穴（１１）とは、同じ位置にあることを特徴とする請求項３に記載の半導体装置。   The through hole (11) provided in the first heat radiating plate (3) and the through hole (11) provided in the second heat radiating plate (4) are in the same position. The semiconductor device according to claim 3. 前記複数個の半導体素子（１、２）は、第１の半導体素子（１）としての絶縁ゲート型バイポーラトランジスタと、第２の半導体素子（２）としてのフライホイールダイオードとを有しており、The plurality of semiconductor elements (1, 2) include an insulated gate bipolar transistor as a first semiconductor element (1) and a flywheel diode as a second semiconductor element (2).
前記貫通穴（１１）は、前記第１、第２の半導体素子（１、２）の間に位置するように設けられていることを特徴とする請求項１ないし４のいずれか１つに記載の半導体装置。The said through hole (11) is provided so that it may be located between the said 1st, 2nd semiconductor elements (1, 2), The one of Claim 1 thru | or 4 characterized by the above-mentioned. Semiconductor device. 前記貫通穴（１１）は、当該貫通穴（１１）が設けられている前記放熱板（３、４）の前記内面（３ａ、４ａ）から前記外面（３ｂ、４ｂ）に向かって拡がるテーパ形状をなすものであることを特徴とする請求項１ないし５のいずれか１つに記載の半導体装置。   The through hole (11) has a tapered shape that extends from the inner surface (3a, 4a) to the outer surface (3b, 4b) of the heat radiating plate (3, 4) provided with the through hole (11). The semiconductor device according to claim 1, wherein the semiconductor device is a device. 前記貫通穴（１１）は、当該貫通穴（１１）が設けられている前記放熱板（３、４）の前記内面（３ａ、４ａ）と前記外面（３ｂ、４ｂ）との間に位置する中間部が絞られた鼓形状をなすものであることを特徴とする請求項１ないし５のいずれか１つに記載の半導体装置。   The through hole (11) is an intermediate located between the inner surface (3a, 4a) and the outer surface (3b, 4b) of the radiator plate (3, 4) provided with the through hole (11). 6. The semiconductor device according to claim 1, wherein the portion has a drum shape with a narrowed portion. 互いの内面（３ａ、４ａ）にて対向する第１の放熱板（３）と第２の放熱板（４）との間に、半導体素子（１、２）を挟み込み、
これら両放熱板（３、４）および半導体素子（１、２）を包み込むようにモールド樹脂（７）で封止するとともに、前記両放熱板（３、４）における前記内面（３ａ、４ａ）とは反対側の外面（３ｂ、４ｂ）を前記モールド樹脂（７）から露出させてなる半導体装置において、
前記両放熱板（３、４）が対向している部位において前記両放熱板（３、４）の少なくとも一方の放熱板には、当該少なくとも一方の放熱板の前記内面（３ａ、４ａ）から前記外面（３ｂ、４ｂ）まで貫通する貫通穴（１１）が設けられており、
前記貫通穴（１１）は、当該貫通穴（１１）が設けられている前記放熱板（３、４）の前記内面（３ａ、４ａ）から前記外面（３ｂ、４ｂ）に向かって拡がるテーパ形状をなすものであることを特徴とする半導体装置。 The semiconductor element (1, 2) is sandwiched between the first heat radiating plate (3) and the second heat radiating plate (4) facing each other on the inner surfaces (3a, 4a),
The heat radiating plates (3, 4) and the semiconductor element (1, 2) are sealed with a mold resin (7) so as to wrap, and the inner surfaces (3a, 4a) of the heat radiating plates (3, 4) In the semiconductor device in which the outer surface (3b, 4b) on the opposite side is exposed from the mold resin (7),
At a portion where the heat radiating plates (3, 4) are opposed to each other, at least one heat radiating plate of the two heat radiating plates (3, 4) is formed from the inner surface (3a, 4a) of the at least one heat radiating plate. There is a through hole (11) that penetrates to the outer surface (3b, 4b),
The through hole (11) has a tapered shape that extends from the inner surface (3a, 4a) to the outer surface (3b, 4b) of the heat radiating plate (3, 4) provided with the through hole (11). semi conductor arrangement, characterized in that those forms. 互いの内面（３ａ、４ａ）にて対向する第１の放熱板（３）と第２の放熱板（４）との間に、半導体素子（１、２）を挟み込み、
これら両放熱板（３、４）および半導体素子（１、２）を包み込むようにモールド樹脂（７）で封止するとともに、前記両放熱板（３、４）における前記内面（３ａ、４ａ）とは反対側の外面（３ｂ、４ｂ）を前記モールド樹脂（７）から露出させてなる半導体装置において、
前記両放熱板（３、４）が対向している部位において前記両放熱板（３、４）の少なくとも一方の放熱板には、当該少なくとも一方の放熱板の前記内面（３ａ、４ａ）から前記外面（３ｂ、４ｂ）まで貫通する貫通穴（１１）が設けられており、
前記貫通穴（１１）は、当該貫通穴（１１）が設けられている前記放熱板（３、４）の前記内面（３ａ、４ａ）と前記外面（３ｂ、４ｂ）との間に位置する中間部が絞られた鼓形状をなすものであることを特徴とする半導体装置。 The semiconductor element (1, 2) is sandwiched between the first heat radiating plate (3) and the second heat radiating plate (4) facing each other on the inner surfaces (3a, 4a),
The heat radiating plates (3, 4) and the semiconductor element (1, 2) are sealed with a mold resin (7) so as to wrap, and the inner surfaces (3a, 4a) of the heat radiating plates (3, 4) In the semiconductor device in which the outer surface (3b, 4b) on the opposite side is exposed from the mold resin (7),
At a portion where the heat radiating plates (3, 4) are opposed to each other, at least one heat radiating plate of the two heat radiating plates (3, 4) is formed from the inner surface (3a, 4a) of the at least one heat radiating plate. There is a through hole (11) that penetrates to the outer surface (3b, 4b),
The through hole (11) is an intermediate located between the inner surface (3a, 4a) and the outer surface (3b, 4b) of the radiator plate (3, 4) provided with the through hole (11). semiconductors and wherein the part is a component of hourglass shape is narrowed.
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