JP4762627B2 - 撮像装置および撮像装置の製造方法 - Google Patents
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
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- H—ELECTRICITY
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- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/555—Constructional details for picking-up images in sites, inaccessible due to their dimensions or hazardous conditions, e.g. endoscopes or borescopes
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- H—ELECTRICITY
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- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/57—Mechanical or electrical details of cameras or camera modules specially adapted for being embedded in other devices
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
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- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
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Description
図1は、この発明の実施の形態1である撮像装置の一構成例を模式的に示す斜視図である。図1に示すように、この撮像装置1は、被写体からの光を受光し光電変換して被写体の画像を撮像する固体撮像素子2と、固体撮像素子2の受光面に被写体からの光を集光する光学系3と、固体撮像素子2を実装する回路基板4と、かかる固体撮像素子2と回路基板4との実装強度を補強するとともに固体撮像素子2の受光領域(後述する)以外の領域を遮光する樹脂部材5とを有する。
つぎに、この発明の実施の形態2について説明する。この実施の形態2にかかる撮像装置は、固体撮像素子の上面に設置する光学系の筒部材に位置決め部をさらに形成し、かかる位置決め部によってこの固体撮像素子での設置位置を決定するようにしている。
つぎに、この発明の実施の形態3について説明する。この実施の形態3では、上述した実施の形態1である撮像装置1をカプセル型の筐体の内部に組み込んだカプセル内視鏡を実現している。
2 固体撮像素子
2a CCDチップ
2b カバー部材
2c 突起電極群
2d 受光部
2e 縁部
3,23 光学系
3a レンズ
3b,23b 筒部材
3c 貫通孔
3d 受光領域
4 回路基板
5 樹脂部材
23c,23d 位置決め部
23e 係合面
101 撮像装置
102 固体撮像素子
102a 受光部
102b カバーガラス
102c 半田ボール群
103 光学系
103a レンズ
103b 筒部材
103c 遮光壁
103d 受光領域
104 回路基板
105 樹脂部材
201 カプセル内視鏡
202 筐体
202a 光学ドーム
202b ドーム
203 照明源
205 送信機
206 送信用アンテナ
207 電源部
Claims (6)
- 被写体からの光を受光面を介して受光し光電変換する半導体チップの上面に光透過性部材を設けて該半導体チップを保護し、該半導体チップの下面に電極端子群を設けた固体撮像素子と、
前記光透過性部材の面上であって前記受光面に相対する受光領域上に設けられ前記被写体からの光を集光する光学系と、
前記固体撮像素子が設置される回路基板と該固体撮像素子との間の空隙を埋めて前記回路基板と前記固体撮像素子の電極端子群との接合強度を補強するとともに前記光透過性部材の受光領域以外の領域を覆い、遮光する樹脂部材と、
を備えたことを特徴とする撮像装置。 - 前記樹脂部材は、黒色系樹脂であることを特徴とする請求項1に記載の撮像装置。
- 前記光学系は、前記光透過性部材上の取り付け位置を決定する位置決め部を備えたことを特徴とする請求項1または2に記載の撮像装置。
- 前記固体撮像素子のパッケージ形態は、CSPであることを特徴とする請求項1〜3のいずれか一つに記載の撮像装置。
- 被写体からの光を受光面を介して受光し光電変換する半導体チップの上面に光透過性部材を設け、該半導体チップの下面に電極端子群を設けた固体撮像素子の該電極端子群と回路基板とを接合する接合工程と、
前記光透過性部材の面上であって前記受光面に相対する受光領域上に前記被写体からの光を集光する光学系を設置する光学系設置工程と、
遮光性を有した樹脂部材によって、前記回路基板と前記半導体チップとの間の空隙を埋めて接合強度を補強するとともに前記光透過性部材の受光領域以外の領域を覆って遮光する補強遮光工程と、
を含むことを特徴とする撮像装置の製造方法。 - 被写体からの光を受光面を介して受光し光電変換する半導体チップの上面に光透過性部材を設け、該半導体チップの下面に電極端子群を設けた固体撮像素子の前記光透過性部材の面上であって、前記受光面に相対する受光領域上に前記被写体からの光を集光する光学系を設置する光学系設置工程と、
前記電極端子群と回路基板とを接合する接合工程と、
遮光性を有した樹脂部材によって前記回路基板と前記半導体チップとの間の空隙を埋めて接合強度を補強するとともに前記光透過性部材の受光領域以外の領域を覆って遮光する補強遮光工程と、
を含むことを特徴とする撮像装置の製造方法。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
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JP2005214826A JP4762627B2 (ja) | 2005-07-25 | 2005-07-25 | 撮像装置および撮像装置の製造方法 |
CNB2006800230825A CN100542215C (zh) | 2005-07-25 | 2006-05-25 | 摄像装置和摄像装置的制造方法 |
CA2611916A CA2611916C (en) | 2005-07-25 | 2006-05-25 | Imaging apparatus and method of manufacturing the same |
AU2006273552A AU2006273552B2 (en) | 2005-07-25 | 2006-05-25 | Imaging device and method for manufacturing imaging device |
EP06746874A EP1909488B1 (en) | 2005-07-25 | 2006-05-25 | Imaging device and method for manufacturing imaging device |
PCT/JP2006/310495 WO2007013214A1 (ja) | 2005-07-25 | 2006-05-25 | 撮像装置および撮像装置の製造方法 |
KR1020087001778A KR20080017490A (ko) | 2005-07-25 | 2006-05-25 | 촬상 장치 및 촬상 장치의 제조 방법 |
US11/492,264 US7785024B2 (en) | 2005-07-25 | 2006-07-25 | Imaging apparatus and method of manufacturing the same |
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JP2005214826A JP4762627B2 (ja) | 2005-07-25 | 2005-07-25 | 撮像装置および撮像装置の製造方法 |
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JP2007036481A JP2007036481A (ja) | 2007-02-08 |
JP4762627B2 true JP4762627B2 (ja) | 2011-08-31 |
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JP2005214826A Expired - Fee Related JP4762627B2 (ja) | 2005-07-25 | 2005-07-25 | 撮像装置および撮像装置の製造方法 |
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US (1) | US7785024B2 (ja) |
EP (1) | EP1909488B1 (ja) |
JP (1) | JP4762627B2 (ja) |
KR (1) | KR20080017490A (ja) |
CN (1) | CN100542215C (ja) |
AU (1) | AU2006273552B2 (ja) |
CA (1) | CA2611916C (ja) |
WO (1) | WO2007013214A1 (ja) |
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CN111131663B (zh) * | 2018-10-31 | 2021-12-24 | 中芯集成电路(宁波)有限公司 | 感光组件及其形成方法、镜头模组、电子设备 |
CN112362561A (zh) * | 2020-10-26 | 2021-02-12 | 南京大学 | 一种图像处理系统及方法 |
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JPS5889844A (ja) * | 1981-11-24 | 1983-05-28 | Toshiba Corp | 樹脂封止型半導体装置 |
JP3651577B2 (ja) * | 2000-02-23 | 2005-05-25 | 三菱電機株式会社 | 撮像装置 |
JP3880278B2 (ja) * | 2000-03-10 | 2007-02-14 | オリンパス株式会社 | 固体撮像装置及びその製造方法 |
JP3607160B2 (ja) * | 2000-04-07 | 2005-01-05 | 三菱電機株式会社 | 撮像装置 |
US6603107B2 (en) | 2000-04-10 | 2003-08-05 | Mitsubishi Denki Kabushiki Kaisha | Image pickup device and portable telephone |
JP2003110945A (ja) | 2001-09-26 | 2003-04-11 | Sanyo Electric Co Ltd | カメラモジュール |
JP4022139B2 (ja) | 2002-12-25 | 2007-12-12 | 富士通株式会社 | 電子装置及び電子装置の実装方法及び電子装置の製造方法 |
JP4174664B2 (ja) * | 2003-01-14 | 2008-11-05 | セイコーエプソン株式会社 | 光モジュール及びその製造方法並びに電子機器 |
JP2004319530A (ja) * | 2003-02-28 | 2004-11-11 | Sanyo Electric Co Ltd | 光半導体装置およびその製造方法 |
JP4838501B2 (ja) * | 2004-06-15 | 2011-12-14 | 富士通セミコンダクター株式会社 | 撮像装置及びその製造方法 |
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US20070019952A1 (en) | 2007-01-25 |
EP1909488A1 (en) | 2008-04-09 |
EP1909488A4 (en) | 2009-03-04 |
KR20080017490A (ko) | 2008-02-26 |
CN101208945A (zh) | 2008-06-25 |
CN100542215C (zh) | 2009-09-16 |
WO2007013214A1 (ja) | 2007-02-01 |
AU2006273552A1 (en) | 2007-02-01 |
AU2006273552B2 (en) | 2010-05-20 |
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JP2007036481A (ja) | 2007-02-08 |
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