JP4760609B2 - Component mounting method and apparatus on board - Google Patents

Description

  The present invention relates to a component mounting method and apparatus on a substrate, and more particularly to a component mounting method and apparatus on a substrate for bonding components after plasma processing of a component bonding portion of the substrate with atmospheric pressure plasma.

  Conventionally, a mixed gas of an inert gas and a reactive gas is supplied from one end of a cylindrical reaction space in the vicinity of atmospheric pressure (in a pressure range of 500 to 1500 mmHg), and between a pair of electrodes arranged inside and outside the reaction space A plasma head that generates atmospheric pressure plasma by applying a high-frequency voltage to the reaction space to generate atmospheric pressure plasma and blows out as a plasma jet from the other end of the reaction space is used. It is known that plasma processing such as cleaning and surface modification of a component bonding portion of a substrate is performed by moving along the portion (see, for example, Patent Document 1).

  Further, as shown in FIGS. 9A and 9B, a pair of electrodes 53 and 54 are arranged inside and outside the cylindrical reaction space 52, and an inert gas 55 is supplied from the upper end of the reaction space 52, A plasma head 51 configured to generate a plasma by applying a high-frequency voltage between the electrodes 53 and 54 and to blow out a plasma jet 56 from the lower end 52a of the reaction space 52 is used. The plasma head 51 is a flat panel display panel. It is also known that the connection electrode portion 59 formed of the transparent electrode 59a formed in parallel with the side end portion of the panel 57 is subjected to plasma processing by moving the relative position with respect to the table 58 on which the position 57 is positioned as indicated by an arrow a. (For example, refer to Patent Document 2).

  Further, as shown in FIG. 10, a plasma head 61 is used in which a pair of electrodes 63 and 64 are arranged on the outer periphery of a cylindrical reaction vessel or a reaction vessel 62 having a rectangular cross-section with an appropriate interval in the axial direction. The plasma jet is blown out from the lower end 62a of the reaction vessel 62 by applying a high-frequency voltage between the electrodes 63 and 64 by the high-frequency power source 65 while supplying an inert gas from the upper end of the reaction vessel 62. It is also known that plasma treatment is performed by irradiating a connection electrode portion of a flat panel display panel (see, for example, Patent Document 3).

A small microplasma jet generator that generates a microinductively coupled plasma jet under atmospheric pressure has been proposed (see, for example, Patent Document 4).
Japanese Patent Laid-Open No. 11-251304 JP 2002-28597 A JP 2003-167526 A Japanese Patent No. 3616088

However, the plasma generation methods described in the above Patent Documents 1 to 3 generate capacitively coupled plasma (non-equilibrium plasma) using a pair of electrodes in accordance with a parallel plate type. Since the density is limited to 10 ¹¹ to 10 ¹² / cm ³ and the plasma density is low, if the plasma processing is performed on the component bonding portion of the substrate using such capacitively coupled plasma, the processing takes time, Since it cannot be matched with the tact of other parts mounting process, it is necessary to perform plasma processing in a process different from the part mounting process, and there is a problem that productivity of component mounting is greatly reduced. When the plasma processing is performed, there is a problem that the portion subjected to the plasma processing is contaminated again while the substrate is transferred from the plasma processing step to the component mounting step. Furthermore, although it is still possible to cope with the case where the size of the flat panel display is several inches, since the size of the flat panel display has recently increased to over 40 inches, plasma processing is incorporated into the component mounting line. This is practically impossible. Note that the plasma temperature of the capacitively coupled plasma is about several hundred degrees Celsius, and there is little risk of thermal damage to the flat panel display.

On the other hand, the inductively coupled plasma (thermal plasma) described in Patent Document 4 has a plasma density of 10 ¹⁶ to 10 ¹⁷ / cm ³ and is about 10 ⁵ times as high as capacitively coupled plasma. However, thermal plasma has a plasma temperature of several thousand to 10,000 ° C. Therefore, if the substrate to which the plasma is irradiated has a portion that is vulnerable to heat, There is a problem of causing thermal damage. For example, in recent liquid crystal panel manufacturing processes, electronic components for driving liquid crystal are mounted on a component mounting line with a polarizing plate attached in advance, and plasma processing is performed on the mounting line. When the process is incorporated, it is impossible to apply the polarizing plate because the polarizing plate is damaged by being affected by heat from the high-temperature plasma.

  The present invention solves the above-described conventional problems, and can efficiently perform plasma processing on a component bonding portion of a substrate without causing thermal damage, and can incorporate the plasma processing into a component mounting process. An object of the present invention is to provide a component mounting method and apparatus.

The component mounting method on a substrate of the present invention is a component mounting method on a substrate in which a component is bonded to the bonding portion after plasma processing is performed on the component bonding portion of the substrate by performing plasma irradiation with a plasma head. The plasma head has a reaction container that forms a reaction space, and a mixed gas container that has an open end that extends from the end of the reaction container toward the substrate toward the substrate and faces the substrate, and forms a mixed gas region And supplying a first inert gas to the reaction space and applying a high frequency voltage to an antenna disposed in the vicinity of the reaction space to generate a primary plasma composed of inductively coupled plasma from the reaction space. blown into the mixed gas region, the primary plasma, disposed in the wall upper portion of the mixed gas container, a gas supply port for supplying the mixed gas into the mixed gas container The supplied said second inert gas in the mixed gas region and a main mixed gas of an appropriate amount of the reactive gas, wherein by generating a secondary plasma collide with the portion below the lower end of the reaction vessel The secondary plasma developed in the mixed region is irradiated from the open end of the mixed gas container to the joint part of the substrate component.

  According to this configuration, when the primary plasma composed of inductively coupled plasma having a high plasma density collides with the mixed gas region of the second inert gas and the reactive gas, the second inert gas collided with the primary plasma is As a result of the avalanche phenomenon, the plasma is developed and spread over the entire mixed gas region, and a secondary plasma is generated in which the reactive gas is turned into plasma by the radical of the second inert gas that has been turned into plasma. Can generate a secondary plasma with a higher plasma density and lower plasma temperature than the capacitively coupled plasma, and irradiating this secondary plasma to the part-bonding part of the substrate to cause thermal damage to the substrate The required plasma treatment can be performed efficiently in a short time without giving any contact. Strength and reliably be joined parts can mount components to good productivity substrate incorporating a plasma treatment to the component mounting process.

  In addition, when the mixed gas region is formed by supplying a premixed second inert gas and reactive gas mixed gas to the region, the gas supply configuration is simpler than when both gases are supplied separately. In addition, since the second inert gas and the reactive gas are mixed uniformly, a uniform plasma treatment can be realized as a whole.

  Further, when the mixed gas region is formed by separately supplying the second inert gas and the reactive gas to the region, the reactive gas can be adjusted to an arbitrary concentration and mixed, and a desired plasma treatment can be performed. It can be performed.

  In addition, the substrate is a panel for a flat panel display, the joint part is a connection electrode provided at the end of the panel, the part is an anisotropic conductive film to be affixed on the connection electrode, and a flat panel that is temporarily and permanently crimped thereon. An electronic component for driving a display. When the component mounting process includes a plasma processing step, an anisotropic conductive film pasting step, a temporary pressure bonding step, and a main pressure bonding step, the driving electronic component has an anisotropic conductive film. Thus, the flat panel display mounted via a single component mounting line can be manufactured with high productivity.

In addition, the component mounting apparatus to the substrate of the present invention relatively moves the substrate and the plasma head so that the plasma head relatively moves along the component bonding portion of the substrate and the plasma head that plasma-treats the component bonding portion of the substrate. A component mounting apparatus for mounting on a substrate, comprising: a plasma processing unit provided with a moving means; and a component bonding unit for bonding a component to a component bonding site of the substrate. An active gas is supplied and a high-frequency voltage is applied to an antenna disposed in the vicinity of the reaction vessel to cause primary plasma composed of inductively coupled plasma from the reaction vessel toward the substrate from the end of the reaction vessel on the substrate side. and inductively coupled plasma generator for blown into the mixed gas container having an open end facing the extension out substrate, the primary plasma, the wall upper portion of the mixed gas container Is set, the mixed gas to the second gas mixture obtained by mixing an appropriate amount of a reactive gas mainly containing inert gas in the mixed gas container supplied from the supply gas inlet inside the mixed gas container, said reaction A secondary plasma is generated by colliding with a portion below the lower end of the container to be developed in the mixed region, and the developed secondary plasma is joined to the substrate component from the open end facing the substrate of the mixed gas container. And a plasma developing part for irradiating the site.

  According to this configuration, the component mounting portion of the substrate is plasma-processed by the plasma processing unit having the plasma head and the moving means, and the component is bonded and mounted by the component bonding unit, thereby implementing the component mounting method on the substrate. And the effect can be demonstrated.

  Further, when the moving means includes a robot apparatus and the plasma head is mounted on a movable head that can move in the X, Y, and Z directions of the robot apparatus, the substrate is positioned at a predetermined position and the plasma head is moved along the part bonding portion. By moving it, the component bonding site can be plasma-processed appropriately and efficiently, and plasma processing can be performed with high versatility on any substrate.

  In addition, the substrate is a panel for a flat panel display, the joint part is a connection electrode provided at the end of the panel, the part is an anisotropic conductive film to be affixed on the connection electrode, and a flat panel that is temporarily and permanently crimped thereon. An electronic component for driving a display. When the plasma processing unit, the anisotropic conductive film pasting unit, the temporary crimping unit, and the main crimping unit are included, the driving electronic component is mounted via the anisotropic conductive film. A flat panel display can be manufactured with high productivity in a single device.

  According to the component mounting method and apparatus on the substrate of the present invention, the primary plasma composed of inductively coupled plasma having a high plasma density is caused to collide with the mixed gas region of the second inert gas and the reactive gas, thereby capacitive coupling. A secondary plasma with a higher plasma density and lower plasma temperature than the type plasma is generated, and the plasma treatment is performed by irradiating the secondary plasma to the component bonding part of the substrate, so that the substrate can be shortened without causing thermal damage. The required plasma treatment can be performed efficiently in time, and by joining the parts to the parts joining parts after the plasma treatment, the parts can be joined with high joining strength and reliability. By incorporating the plasma processing, components can be mounted on the substrate with high productivity.

  Hereinafter, an embodiment in which a component mounting apparatus on a substrate of the present invention is applied to a component mounting apparatus for mounting a driving component on a liquid crystal panel which is an example of a flat panel display will be described with reference to FIGS. explain.

(First embodiment)
First, a first embodiment of a component mounting apparatus for a liquid crystal panel according to the present invention will be described with reference to FIGS.

  1A and 1B, reference numeral 1 denotes a component mounting apparatus for a liquid crystal panel, which includes a plasma processing unit 2, an anisotropic conductive film pasting unit 3, a temporary crimping unit 4, and a main crimping unit 5. The liquid crystal panel 6 carried in by carrying-in means (not shown) is first received by the plasma processing unit 2, and surface modification by plasma processing is performed on the component joint portion 7 provided at the side end of the liquid crystal panel 6. Is done. Next, the liquid crystal panel 6 is transported to the anisotropic conductive film pasting portion 3, the component joining portion 7 of the liquid crystal panel 6 is positioned immediately below the anisotropic conductive film pasting means 3 a, and the anisotropic conductive film 8 with respect to the component mounting portion 7. Is pasted. Next, the liquid crystal panel 6 is conveyed to the provisional pressure bonding unit 4, and an electronic component 9 supplied from the component supply unit 4 a, for example, an IC or TAB substrate for driving the liquid crystal panel 6 is provisionally pressure bonded onto the anisotropic conductive film 8. The Next, the liquid crystal panel 6 is transported to the main press-bonding section 5, and each part that is temporarily press-bonded is subjected to main press-bonding by applying a higher temperature and pressure with the press-bonding tool 5a, whereby the electronic component 9 is mounted. The In this way, the liquid crystal panel 6 on which the electronic component 9 is mounted is unloaded from the component mounting apparatus 1.

  The configuration of the liquid crystal panel 6 will be described with reference to FIG. A liquid crystal panel 6 is configured by disposing liquid crystal between two glass substrates 10a and 10b, and a protruding portion 11 is provided by projecting a side end portion of one glass substrate 10a. A connection electrode 12 connected to the electrode for driving is disposed. When the liquid crystal panel 6 is small, the protrusion 11 has only one side end as in the example shown in FIG. 1, and in the case of the medium size, the protrusion 11 has two L-shaped continuous sides as shown in FIG. At the end, in the case of a large size, it is provided at three side ends that are continuous in a U-shape. As shown in FIG. 2A, polarizing plates 13a and 13b are attached in advance to both surfaces of the liquid crystal panel 6 except for the protruding portion 11, and the component mounting apparatus 1 in the state shown in FIG. It is carried in. In the component mounting apparatus 1, the electronic component 9 is mounted so as to be connected to the connection electrode 12 provided on the protruding portion 11 through the anisotropic conductive film as described above, and the state shown in FIG. The liquid crystal panel 6 is carried out, and then, as shown in FIG. 2 (d), a printed board 14 is bonded to each electronic component 9 and incorporated into a liquid crystal display device (not shown).

  In such a liquid crystal panel 6, as shown in FIG. 3A, a plurality of component joining sites 7 having a predetermined length L1 for joining the electronic component 9 are provided at a predetermined pitch interval on the protruding portion 11 of one glass substrate 10a. In the plasma processing step, it is preferable to perform plasma processing only on the component bonding portion 7. In addition, as shown in FIG. 3B, the width L2 of the protrusion 11 may be about several mm to 40 mm in the medium-sized / large-sized liquid crystal panel 6, especially when a liquid crystal driving IC is mounted thereon. In that case, the area to be plasma-treated becomes large. Therefore, when the plasma processing unit 2 is configured to irradiate and process the conventional capacitively coupled plasma, the processing time is long, and the anisotropic conductive film pasting unit 3, the temporary crimping unit 4, and the main crimping unit that follow. The component mounting apparatus 1 in which the plasma processing unit 2, the anisotropic conductive film pasting unit 3, the temporary crimping unit 4, and the main crimping unit 5 are configured in a line cannot be realized.

  As shown in FIG. 1, the plasma processing unit 2 according to the present embodiment includes a robot device 14 as a moving unit that can move and position in three axis directions, and move and move in the three axis directions of XYZ. The plasma head 20 is mounted on the movable head 14a that can be positioned. Further, the liquid crystal panel 6 is carried in / out at a position below the movable range of the plasma head 20 by a carry-in / carry-out unit (not shown), and is positioned and fixed at a predetermined position.

  The configuration of the plasma head 20 will be described with reference to FIGS. 4 (a) and 4 (b). A coiled antenna 23 is disposed around a cylindrical reaction vessel 22 made of a dielectric material that forms a reaction space 21 having a circular cross section, and a high frequency voltage is applied to the antenna 23 from a high frequency power supply 24 to generate a high frequency in the reaction space 21. By applying an electric field and supplying the first inert gas 25 from the upper end 22 a of the reaction vessel 22, the primary plasma 26 composed of high temperature inductively coupled plasma is blown out from the lower end 22 b of the reaction vessel 22. It is configured as follows. This reaction vessel 22 constitutes an inductively coupled plasma generator.

  A rectangular mixed gas container 27 is disposed around the vicinity of the lower end 22b of the reaction container 22, and a plurality of gas supply ports 29 for supplying the mixed gas 28 to the inside are disposed at the upper part of the four peripheral walls. The mixed gas container 27 extends below the lower end 22 b of the reaction container 22, and the lower end open mixed gas in which the primary plasma 26 collides with a portion below the lower end 22 b of the reaction container 22 to generate the secondary plasma 31. Region 30 is formed. This mixed gas container 27 constitutes a plasma developing part.

  As the high-frequency power source 24 for supplying a high-frequency voltage to the antenna 23, one having an output frequency of several tens to several hundreds of MHz is suitable, but one having a microwave frequency band can also be used. A matching unit (matching circuit) that suppresses the reflected wave generated by the antenna 23 is interposed between the high-frequency power supply 24 and the antenna 23.

  As shown in FIG. 5, the control configuration of the plasma processing unit 2 is based on an operation program and control data stored in advance in the storage unit 33 by the control unit 32, and a robot device 14 as a moving unit of the plasma head 20, The high-frequency power supply 24 and the flow rate control unit 35 that controls the gas supply from the gas supply unit 34 to the plasma head 20 are controlled to operate. Further, the control of the flow rate control unit 35 by the control unit 32 is a process start recognizing means for recognizing the timing at which the plasma head 20 faces the component bonding site 7 of the liquid crystal panel 6, that is, the start and end of processing for the component bonding site 7. 36 and the signal input from the processing end recognition means 37, the mixed gas 28 is supplied to the mixed gas container 27 by the processing start signal to perform the plasma processing on the component joining portion 7, and the mixed gas 28 is output by the processing end signal. By stopping the supply of the plasma processing, the plasma processing for the component bonding portion 7 is terminated. In the present embodiment, the process start recognizing unit 36 and the process end recognizing unit 37 are configured to recognize by comparing the control data stored in the storage unit 33 and the current position data from the robot apparatus 14. However, a means for recognizing when the plasma head 20 is opposed to the start point and the end point of the component bonding site 7 may be provided.

  Specifically, the gas supply unit 34 and the flow rate control unit 35 are configured as shown in FIG. That is, the gas supply unit 34 includes a first inert gas supply source 38 that supplies the first inert gas 25, and a mixed gas source 39 that supplies a mixed gas 28 of the second inert gas and the reactive gas. And pressure regulating valves 38a and 39a are provided at the respective gas outlets. The first inert gas 25 is supplied to the reaction vessel 22 via a first flow rate control device 41 including a mass flow controller and the mixed gas 28 is opened and closed with a second flow rate control device 42 including a mass flow controller. The mixed gas container 27 is configured to be supplied via the control valve 40. The opening / closing control valve 40 and the first and second flow rate control devices 41 and 42 constitute a flow rate control unit 35, which is controlled by the control unit 32.

As the first and second inert gases, a single gas or a plurality of mixed gases selected from argon, neon, xenon, helium, and nitrogen are applied. As the reactive gas, oxygen, air, oxidizing gases such as CO ₂ and N ₂ O, reducing gases such as hydrogen and ammonia, and fluorine-based gases such as CF ₄ are applicable depending on the type of plasma treatment. Is done. Although nitrogen gas is not literally an inert gas, it exhibits a behavior similar to that of the original inert gas in the generation of atmospheric pressure plasma, and can be used in substantially the same manner. It is assumed that the active gas contains nitrogen gas.

  In the above configuration, the mixed gas 28 is supplied into the mixed gas container 27 in a state where the primary plasma 26 made of inductively coupled plasma is blown out from the lower end 22b of the reaction container 22, thereby mixing in the mixed gas region 30. The primary plasma 26 collides with the gas 28 to generate a secondary plasma 31, which develops in the entire region of the mixed gas region 30 and further blows downward from the mixed gas region 30. The secondary plasma 31 has a plasma temperature lower than that of the primary plasma 26 and a plasma density as high as several tens to several hundred times that of a conventional capacitively coupled plasma. By irradiating the secondary plasma 31 to the component bonding site 7 of the liquid crystal panel 6, desired plasma processing is efficiently performed in a short time. In addition, since the secondary plasma 31 develops greatly, plasma processing in a large area compared to the cross-sectional area of the reaction vessel 22 can be performed efficiently and reliably in a short time.

  Here, the configuration of the plasma head 20 and a specific example of the supply gas will be described. In FIG. 4, the inner diameter R1 of the reaction vessel 22 = 0.8 mm, the inner diameter R2 of the mixed gas region forming cylinder 27 = 5 mm, and the mixed gas vessel 27. The apparatus has a configuration in which a distance L1 between the lower end of the liquid crystal panel 6 and the plasma processing unit of the liquid crystal panel 6 is 1 mm, and a distance L2 between the lower end of the reaction vessel 22 and the lower end of the mixed gas vessel 27 is 4 mm. The flow rate was set to 50 sccm using argon gas, the flow rate was set to 500 sccm using argon gas or helium gas as the second inert gas, and the flow rate was set to 50 sccm using oxygen gas or the like as the reactive gas. Then, the first inert gas 25 is supplied to the reaction vessel 22, a predetermined high-frequency electric field is applied, and the mixed gas 28 of the second inert gas and the reactive gas is supplied into the mixed gas vessel 27. Then, the secondary plasma 31 was generated and the surface of the plasma processing portion of the liquid crystal panel 6 was irradiated with the secondary plasma 31. As a result, the secondary plasma 31 could be effectively processed in a short time.

  Next, a description will be given of a plasma processing process of the component bonding portion 7 of the liquid crystal panel 6 by the plasma processing unit 2 having the above configuration.

  When the liquid crystal panel 6 is carried into the plasma processing unit 2 and positioned at a predetermined position, the robot apparatus 14 starts to operate, and the plasma head 20 is directed toward the processing start point of the first component joining portion 7 of the liquid crystal panel 6. Move. A primary plasma 26 is generated by supplying a first inert gas 25 to a reaction vessel 22 serving as an inductively coupled plasma generation unit and applying a high-frequency electric field by a high-frequency power source 24, and the primary plasma 26 is mixed. The gas container 27 is blown out, and the state is continuously maintained thereafter.

In this state, when the plasma head 20 approaches the processing start point, as shown in FIG. 7, the detection signal of the processing start recognizing means 36 rises at the time point t ₀ , and the opening / closing control valve 40 is immediately opened. At time t ₁ , the mixed gas 28 is supplied to the mixed gas container 27, the secondary plasma 31 is generated as described above, and the plasma processing of the component bonding portion 7 is started. Thereafter, the plasma head 20 is maintained while maintaining the plasma processing state. Moves on the component bonding part 7, so that the plasma processing of the component bonding part 7 is performed. Next, at the time t ₂ , the detection signal of the processing end recognition means 37 falls, the opening / closing control valve 40 is immediately closed, and the supply of the mixed gas 28 to the mixed gas container 27 is stopped immediately after the time t _3. The generation of the secondary plasma 31 is stopped, the plasma processing is immediately stopped, and the plasma processing of the first component bonding site 7 is completed.

Subsequently, the operation of the robot device 14 continues, and the plasma head 20 moves toward the processing start point of the next component joining portion 7 of the liquid crystal panel 6. In the meantime, even if the state where the primary plasma 26 is blown out to the mixed gas container 27 is maintained, the secondary plasma 31 is not generated and the plasma processing is not performed at all. When the processing start point is approached at time t ₄ , the detection signal of the processing start recognition means 36 rises, and the open / close control valve 40 is immediately opened, and the mixed gas 28 is supplied to the mixed gas container 27 immediately after time t _5. Then, the secondary plasma 31 is generated as described above, and the plasma processing of the next component bonding site 7 is started. Thereafter, the above operation is repeated until the plasma processing of all the component bonding sites 7 of the liquid crystal panel 6 is completed. When the plasma processing of all the component bonding sites 7 is completed, the liquid crystal panel 6 is carried out for the next process, the next liquid crystal panel 6 is carried in, and the plasma processing is performed in the same manner.

  In addition, since the secondary plasma 31 can be switched between formation and stop by supplying / stopping the mixed gas 28 to the mixed gas container 27, a plurality of component joining sites 7 can be maintained while maintaining the height position of the plasma head 20. Since the plasma head 20 travels in a straight path, the plasma head 20 travels in a shorter time and the movement control is simplified, so that the plasma treatment is performed in a shorter time. be able to.

  A specific example of the processing tact is shown in the case of the liquid crystal panel 5 of 10 to 20 inches, the anisotropic conductive film pasting portion 3 is 5 to 7 seconds, the temporary pressure bonding portion 4 is 8 to 15 seconds, and the main pressure bonding portion 5 is 8 It is preferable to set the processing tact of the plasma processing unit 2 to be shorter than that of the anisotropic conductive film pasting unit 3, and this can be realized in this embodiment.

  In the plasma head 20 of the above-described embodiment, the mixed gas container 27 is illustrated as having a rectangular tube shape as shown in FIG. 4, but a cylindrical shape, an inverted prefix pyramid shape with a diameter decreasing downward, or a prefix is illustrated. It may be conical. In the configuration example of FIG. 4, the mixed gas 28 is supplied into the mixed gas container 27 from all of the plurality of gas supply ports 29, but the second reactive gas and the reactive gas are separately supplied to each gas. The gas may be supplied from the supply port 29 into the mixed gas container 27, and these gases may be mixed in the mixed gas container 27 to form the mixed gas region 30.

  Moreover, in the said embodiment, although the robot apparatus 14 carrying the plasma head 20 was shown as a moving means which moves the plasma head 20 and the liquid crystal panel 6 relatively, a moving means is not limited to this. For example, the transport means for transporting the liquid crystal panel 6 may be a moving means, and the plasma head 20 may be fixedly installed. In addition, means for moving the liquid crystal panel 6 and the plasma head 20 may be provided.

(Second Embodiment)
Next, a second embodiment of the component mounting apparatus of the present invention will be described with reference to FIG. In the description of the present embodiment, the same components as those in the first embodiment are denoted by the same reference numerals, description thereof is omitted, and only differences are mainly described.

  In this embodiment, as shown in FIG. 8, in the anisotropic conductive film pasting portion 3, the plasma head 20 is provided above the carry-in / out portion (not shown) so as not to interfere with the anisotropic conductive film pasting means 3a. Is installed, and the plasma processing unit 2 and the anisotropic conductive film pasting unit 3 are provided side by side.

  In the present embodiment, by setting the processing tact of the plasma processing step to 3 to 8 seconds, the processing of the plasma processing portion and anisotropic conductive film pasting portions 2 and 3, the temporary pressure bonding portion 4, and the main pressure bonding portion 5 is performed. All tacts can be unified in 8 to 15 seconds, and the electronic component 9 can be mounted on the liquid crystal panel 6 with high productivity with a compact equipment configuration.

  In the above description of the embodiment, only an example in which the electronic component 9 that drives the flat panel display such as the liquid crystal panel 6 is mounted has been described. However, the present invention is not limited to this, and any various substrates can be used. When the electronic component is mounted on the substrate, it can be suitably applied to the case where the component is mounted after the component bonding portion of the substrate is cleaned by plasma treatment or the surface is modified.

  According to the component mounting method and apparatus on the substrate of the present invention, the plasma density is higher than that of the capacitively coupled plasma and the plasma temperature is lower than that of the inductively coupled plasma. The required plasma treatment can be performed efficiently in a short time, and by joining the parts to the parts joining parts after the plasma treatment, the parts can be joined with high joining strength and reliability. It can be suitably used for a component mounting line for mounting components on the board.

BRIEF DESCRIPTION OF THE DRAWINGS The 1st Embodiment of the component mounting apparatus of this invention is shown, (a) is a whole perspective view, (b) is explanatory drawing of the process process. An explanatory perspective view showing a manufacturing process of a liquid crystal panel. The arrangement | positioning state of the plasma processing site | part of a liquid crystal panel is shown, (a) is a top view, (b) is a fragmentary sectional view. The structure of the plasma head in the same embodiment is shown, (a) is a longitudinal sectional view, (b) is a perspective view. The block diagram of the control structure of the embodiment. The block diagram of the gas supply part and flow control part of the embodiment. Operation | movement explanatory drawing of the plasma processing process of the embodiment. The 2nd Embodiment of the component mounting apparatus of this invention is shown, (a) is a whole perspective view, (b) It is explanatory drawing of a process process. The plasma processing method of the connection electrode site | part in the liquid crystal panel of a prior art example is shown, (a) is a perspective view, (b) is a longitudinal front view. The perspective view which shows the principal part structure of the plasma processing apparatus of another prior art example.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Component mounting apparatus 2 Plasma processing part 3 Anisotropic conductive film sticking part 4 Temporary pressure bonding part 5 Main pressure bonding part 6 Liquid crystal panel (board | substrate)
7 Component bonding site 8 Anisotropic conductive film 9 Electronic component 12 Connection electrode 14 Robot device (moving means)
14a Movable head 20 Plasma head 21 Reaction space 22 Reaction vessel (inductively coupled plasma generator)
23 Antenna 24 High-frequency power supply 25 First inert gas 26 Primary plasma 27 Mixed gas container (plasma developing part)
28 Mixed gas 30 Mixed gas region 31 Secondary plasma

Claims (2)

In a component mounting method on a substrate for bonding a component to the bonding portion after performing plasma treatment by performing plasma irradiation with a plasma head on the component bonding portion of the substrate,
The plasma head includes a reaction container that forms a reaction space, a mixed gas container that has an open end that extends from the end of the reaction container toward the substrate toward the substrate and faces the substrate, and forms a mixed gas region. With
A first inert gas is supplied to the reaction space and a high-frequency voltage is applied to an antenna disposed in the vicinity of the reaction space to generate primary plasma composed of inductively coupled plasma from the reaction space into the mixed gas region. Blow out,
The primary plasma is mainly disposed in the upper part of the wall of the mixed gas container, and mainly includes a second inert gas in the mixed gas region supplied from a gas supply port that supplies the mixed gas into the mixed gas container. A mixed gas in which an appropriate amount of reactive gas is mixed is caused to collide at a portion below the lower end of the reaction vessel to generate secondary plasma, which is developed in the mixed region, and the developed secondary plasma is expanded into the mixed gas. A component mounting method on a board, comprising: irradiating a joint part of a board component from the open end of the container. A plasma processing unit provided with a plasma head for plasma processing of a component bonding portion of the substrate, and a moving means for moving the substrate and the plasma head relative to each other so as to move relative to the component bonding portion of the substrate; A component mounting apparatus on a board having a component bonding portion for bonding a component to a component bonding site,
The plasma head is
A first inert gas is supplied to the reaction vessel and a high-frequency voltage is applied to an antenna disposed in the vicinity of the reaction vessel to cause primary plasma composed of inductively coupled plasma from the reaction vessel to the substrate side of the reaction vessel. An inductively coupled plasma generator that extends from the end toward the substrate and blows into a mixed gas container having an open end facing the substrate;
The primary plasma is mainly disposed on the upper wall of the mixed gas container, and mainly includes a second inert gas in the mixed gas container supplied from a gas supply port that supplies the mixed gas into the mixed gas container. A mixed gas in which an appropriate amount of reactive gas is mixed is caused to collide at a portion below the lower end of the reaction vessel to generate secondary plasma, which is developed in the mixed region, and the developed secondary plasma is expanded into the mixed gas. A component mounting apparatus on a substrate, comprising: a plasma developing unit that irradiates a joint portion of a substrate component from an open end facing the substrate of the container.

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