JP4628820B2 - 波長走査型ファイバレーザ光源 - Google Patents
波長走査型ファイバレーザ光源 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims description 13
- 238000005259 measurement Methods 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 6
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- 238000004458 analytical method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
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- 229910052691 Erbium Inorganic materials 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 235000008694 Humulus lupulus Nutrition 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 1
- 230000017531 blood circulation Effects 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
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- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- -1 erbium ions Chemical class 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
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- VLCQZHSMCYCDJL-UHFFFAOYSA-N tribenuron methyl Chemical compound COC(=O)C1=CC=CC=C1S(=O)(=O)NC(=O)N(C)C1=NC(C)=NC(OC)=N1 VLCQZHSMCYCDJL-UHFFFAOYSA-N 0.000 description 1
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
- H01S3/083—Ring lasers
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
- H01S3/1055—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length one of the reflectors being constituted by a diffraction grating
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
- H01S3/06791—Fibre ring lasers
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- H—ELECTRICITY
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1608—Solid materials characterised by an active (lasing) ion rare earth erbium
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
- H01S5/142—External cavity lasers using a wavelength selective device, e.g. a grating or etalon which comprises an additional resonator
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- Mechanical Light Control Or Optical Switches (AREA)
Description
YAMASHITA ET AL., IEEE JOURAL ON SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL.7, NO.1 JANUARY/FEBRUARY 2001, PP41〜43
Λ(sinγ+sinδ)=kλ ・・・(1)
ここでkは次数であり、0,±1,±2・・・の値となる。さて回折光にはリトロー配置とリットマン配置とがある。リトロー配置では−1次の回折光と入射光の角度が等しい。従って(1)式においてγ=δ-1とすると、(1)式より回折光の波長は次式で決定される。
λ=2Λsinγ ・・・(2)
ここでΛはグレーティングのピッチ(μm)、即ち単位長さ当たりの格子線数a(本/mm)の逆数である。尚、リットマン配置では入射光と反射光の角度は一致していない。
λ=2Λsin(β+ν) ・・・(3)
ここでΛは回折格子ピッチ(μm)であり、回折格子定数aの定数(本/mm)の逆数である。又回折格子による選択波長の半値幅Δλは次式で与えられる。
Δλ=λ2/{2πWtan(β+ν)} ・・・(4)
ここでWは回折格子27に加わる光の光ビーム径であり、β+νは回折格子に対する入射角である。式(3)より明らかなように入射角が大きくなれば選択波長が長く、入射角が小さくなれば短波長となる。そして入射角が大きくなれば図6に示されるように、回折格子の面上に投影される光ビーム径も大きくなるため、λ2はほぼ一定と考えると、半値幅Δλは短波長となるほど太くなる。
W3=M2W2 ・・・(5)
又この拡大率M2は次式で与えられる。
M2=(cosφ・cosν)/(cosθ・cosμ) ・・・(6)
尚、ビームエキスパンダ31においても同様にビーム径が拡大され、元の光ビーム径W1がW3に拡大される。
11 光ファイバ
12 ゲイン媒体
13,14,41,51 光サーキュレータ
15 光カップラ
16 偏波コントローラ
17 エルビウムドープドファイバ
18 半導体レーザ
19 WDMカップラ
21,23 光ファイバ
22,24 コリメートレンズ
25 ポリゴンミラー
26 駆動部
27 回折格子
31,32 ビームエキスパンダ
61 半導体光増幅器
71 偏波面保存型光ファイバ
81 ミラー
82 ガルバノメータ
91,92 スポット
93 ミラー
Claims (9)
- レーザ発振の光路となる光ファイバループと、
前記光ファイバループに接続され、発振する波長に利得を有するゲイン媒体と、
前記光ファイバループより光を分岐すると共に、分岐光と同一の光路で光を前記光ファイバループに戻す光分岐入射部と、
前記光分岐入射部で分岐された分岐光が与えられ、波長を連続的に可変させつつ選択し、選択した波長の光を同一の光路で光分岐入射部に与える波長可変光フィルタと、
前記光ファイバループに接続され、前記光ファイバループを通過する光の一部を取り出す光学カップラと、を具備し、
前記波長可変フィルタは、
前記光分岐入射部より得られる光ビームを反射し、軸を中心として一定範囲でその反射角度を周期的に変化させる光ビーム偏向部と、
前記光ビーム偏向部で偏向された光が第1の光路を通って入射され、入射角に応じて変化する選択波長の光を前記光ビーム偏向部の軸からみて同一方向に前記第1の光路とは異なる第2の光路を通って反射する回折格子と、
前記第2の光路を通って前記光ビーム偏向部で反射され、第3の光路を通って入射された光を第3の光路に折り返し反射するミラーと、を具備することを特徴とする波長走査型ファイバレーザ光源。 - 前記光ファイバループは、偏波面保存型の光ファイバを含んで構成したことを特徴とする請求項1記載の波長走査型ファイバレーザ光源。
- 前記ゲイン媒体は、前記光ファイバループの一部を構成する光ファイバ増幅器であることを特徴とする請求項1記載の波長走査型ファイバレーザ光源。
- 前記ゲイン媒体は、光を増幅する半導体光増幅器であることを特徴とする請求項1記載の波長走査型ファイバレーザ光源。
- 前記光ファイバループには、光ファイバループを通過する光の偏波方向を一定方向に規定する偏波コントローラを更に有することを特徴とする請求項1記載の波長走査型ファイバレーザ光源。
- 前記波長可変フィルタの光ビーム偏向部は、
前記光ファイバより出射される光軸上に配置され、回転によって光の反射角を変化させる複数の反射面を有するポリゴンミラーと、
前記ポリゴンミラーを回転させて光の反射角度を制御する駆動部と、を有することを特徴とする請求項1記載の波長走査型ファイバレーザ光源。 - 前記波長可変フィルタの光ビーム偏向部は、
前記光ファイバより出射される光軸上に配置され、回転によって光の反射角を変化させるミラーと、
前記ミラーを一定の角度範囲で回動させるガルバノメータと、を有することを特徴とする請求項1記載の波長走査型ファイバレーザ光源。 - 前記波長可変フィルタは、
前記光ビーム偏向部で偏向された光ビームのビーム径を拡大するビームエキスパンダを更に有し、
前記ビームエキスパンダは選択波長が短くなるに従って拡大率を大きくするものであることを特徴とする請求項1記載の波長走査型ファイバレーザ光源。 - 前記ビームエキスパンダは、
前記光ファイバより得られる光ビームのビーム径を拡大し、前記光ビーム偏向部の前に配置された第1のビームエキスパンダと、
前記第1のビームエキスパンダから得られる光ビームのビーム径を拡大する第2のビームエキスパンダとを有することを特徴とする請求項8記載の波長走査型ファイバレーザ光源。
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JP2005051105A JP4628820B2 (ja) | 2005-02-25 | 2005-02-25 | 波長走査型ファイバレーザ光源 |
US11/113,102 US7382809B2 (en) | 2005-02-25 | 2005-04-25 | Tunable fiber laser light source |
US11/405,702 US7489713B2 (en) | 2005-02-25 | 2006-04-18 | Tunable fiber laser light source |
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