JP4618170B2 - Solid-state imaging device - Google Patents

Description

  The present invention relates to a solid-state imaging device, and more particularly to a solid-state imaging device using a ring-shaped gate electrode.

  The solid-state imaging device includes a photoelectric conversion unit that converts light into an electrical optical signal such as an electric charge, and an output unit that transmits the electric charge to the outside of the pixel as an optical signal. As the photoelectric conversion means, there is a photodiode using a semiconductor diode portion. As an output means, a charge is transferred like a CCD (Charge Coupled Device), or an amplifying device (mainly a MOS field effect transistor (hereinafter referred to as MOSFET)) is built in each pixel to output an optical signal. There is an amplification type solid-state imaging device that amplifies and outputs the signal. Some amplifying devices use a junction type FET (JFET) and a bipolar transistor in addition to the above MOSFET. Further, as a special gate electrode shape of the FET constituting the amplifying device, there is a ring shape in plan view.

  Conventionally, attempts have been made to reduce the number of contacts per pixel in a solid-state imaging device using a ring-shaped gate electrode (see, for example, Patent Documents 1 and 2). That is, Patent Document 1 discloses a solid-state imaging device having a structure in which a gate electrode is a polysilicon wiring connected in a lateral direction with polysilicon as a material, and a contact to the gate electrode is eliminated. Patent Document 2 discloses a solid-state imaging device having a structure in which ring-shaped gate electrodes are connected in units of two pixels via a contact buffer layer. Thus, if the number of contacts per pixel is reduced, the aperture ratio can be increased.

  Note that these amplification type solid-state imaging devices are called a rolling shutter type and have different types of exposure time information for each pixel.

JP-A-1-270263 JP-A-6-268188

  The conventional solid-state imaging devices described in Patent Documents 1 and 2 describe a method of increasing the aperture ratio by reducing the number of contacts per pixel for an amplification-type solid-state imaging device having a ring-shaped gate electrode. However, since the conventional solid-state imaging devices described in Patent Documents 1 and 2 are of a rolling shutter type, there is a problem that time information is shifted in all pixels, and as a result, the image is distorted. In order to solve this, it is necessary to have a global shutter function in which time information is uniform in all pixels, but a structure that has a global shutter function and increases the aperture ratio has not been known.

  The present invention has been made in view of the above points, and an object thereof is to provide a solid-state imaging device having a global shutter function and having a large aperture ratio in an amplification type solid-state imaging device having a ring-shaped gate electrode. To do.

To achieve the above object, the present invention includes a photoelectric conversion region for accumulating the charge incident light by photoelectric conversion, converts the input charges into an optical signal, and for amplifying an output that amplifies and outputs transistor and a pixel having a charge transfer means for transferring charges accumulated in the photoelectric conversion region to the amplifier output transistor, Ri Contact are regularly arranged in the row and column directions, simultaneously in the photoelectric conversion region of all pixels The charge accumulated by exposure and photoelectric conversion is transferred to the amplification output transistors of all pixels simultaneously by the charge transfer means of all pixels, and then the optical signal is output as an imaging signal from the amplification output transistors of each pixel. for example Bei the drive means,
The transistor for amplification output includes a ring-shaped gate electrode on the substrate, a source electrode diffusion region provided at the position of the substrate corresponding to the central opening of the ring-shaped gate electrode, and surrounds the source electrode diffusion region and is in a ring shape The transistor is provided with a region near the source provided on the substrate so as not to reach the outer periphery of the gate electrode, and outputs the amount of input charge as a change in threshold value. Charge transfer means accumulates in the photoelectric conversion region And a ring-shaped gate electrode between adjacent pixels in the row direction is connected to each other by a common first polysilicon layer and a first signal wiring is provided. The transfer gate electrodes of adjacent pixels in the row direction are connected to each other by a common second polysilicon layer. Are connected via a second contact in common to the second signal lines together are, drive means, the connected ring gate electrode in common to the first contact via the first signal line at the same time The transfer gate electrode is driven, and the transfer gate electrode commonly connected to the second contact through the second signal wiring is simultaneously driven.

In order to achieve the above object, the present invention is characterized in that the first contact and the second contact of the present invention are provided every other pixel in the row direction.

According to the present invention, Te solid-state imaging device odor having a global shutter function, in which to reduce the number of connection means of one pixel compared to the traditional, it is possible to increase the aperture ratio as compared with the conventional, thereby Sensitivity can be improved as compared with the prior art.

  Next, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a plan view of an embodiment of a solid-state imaging device according to the present invention. As shown in the figure, the pixels 10 are regularly arranged in a two-dimensional matrix. In FIG. 1, only 2 rows and 4 columns are shown among the pixels 10 arranged in a large number.

  The pixel 10 includes a photoelectric conversion region (photodiode) 50, a transfer gate electrode 51, and a ring-shaped gate electrode 45. The outer periphery of the ring-shaped gate electrode 45 is the drain electrode diffusion region 48 and the center of the ring-shaped gate electrode 45. The opening is the source electrode diffusion region 46. A transfer gate electrode wiring 55, a ring-shaped gate electrode wiring 53, a drain electrode wiring 52, and a source electrode wiring 54 are connected to each electrode through any of the contacts VIA 59a to 59c. There is a source vicinity region 47 in the vicinity of the source electrode diffusion region 46.

  The transfer gate electrodes 51 of two pixels adjacent in the horizontal direction (row direction) are connected to the transfer gate electrode wiring 55 via one contact VIA 59b, and the transfer gate electrodes 51 of the two pixels 10 can be driven simultaneously. It is like that. The ring-shaped gate electrodes 45 of two pixels adjacent in the horizontal direction are also connected to the ring-shaped gate electrode wiring 53 through one contact VIA 59a, and the ring-shaped gate electrodes 45 of the two pixels 10 are simultaneously connected. It can be driven. That is, the ring-shaped gate electrode 45 and the transfer gate electrode 51 share one contact VIA 59a and 59b with two pixels, respectively.

  Here, as shown in FIG. 1, a set of two horizontally adjacent pixels having two ring-shaped gate electrodes 45 connected in common to one contact 59a and one contact 59b are connected in common. Further, the set of two pixels adjacent in the horizontal direction having two transfer gate electrodes 51 is shifted by one pixel in the horizontal direction. Further, the source electrode diffusion region provided in the central opening of the ring-shaped gate electrode 45 of each pixel 10 is connected to the source electrode wiring 54 via the contact VIA 59d. Accordingly, the average number of contact VIAs in one pixel 10 is 3, which is one less than the number of four electrodes in one pixel 10, so that the aperture ratio can be increased accordingly.

A portion other than the upper portion of the photoelectric conversion region (photodiode) 50 is covered with a light shielding film, but this is omitted in FIG. This is shown in FIGS. FIG. 2 is a cross-sectional view taken along line XX ′ of FIG. 1 and shows a state of connection of the ring-shaped gate electrode 45. 2 and 3, the same components as those in FIG. 1 are denoted by the same reference numerals. In FIG. 2, a p ⁻ type epitaxial layer 42 is grown on a p ⁺ substrate 41. An n-well 43 is provided in the p ⁻ -type epitaxial layer, and a ring-shaped gate electrode 45 having a ring shape in plan view is formed on the n-well 43 with a gate oxide film 44 interposed therebetween.

There is an n ⁺ -type source electrode diffusion region 46 on the surface of the n-well 43 in the central opening of the ring-shaped gate electrode 45, and a p-type source vicinity region 47 so as to surround the source electrode diffusion region 46. The source vicinity region 47 does not reach the outer peripheral portion of the ring-shaped gate electrode 45. The ring-shaped gate electrode 45 is connected to the ring-shaped gate electrode wiring 53 through a contact VIA 59a. The transfer gate electrode 51 is connected to the transfer gate electrode wiring 55 through a contact VIA 59b. The source electrode diffusion region 46 is connected to the source electrode wiring 54 via the contact VIA 59d. Each of the above elements is covered with an insulating film 56, and a light shielding film 57 is formed on the insulating film 56. The light shielding film 57 is formed of a metal or an organic film.

  The ring-shaped gate electrode wiring 53 drives the ring-shaped gate electrode 45 through the contact VIA 59a. Since the ring-shaped gate electrode 45 is made of polysilicon and the ring-shaped gate electrodes of all the pixels are connected in the row direction, one contact VIA 59a may be provided for a plurality of pixels, and the ratio can be freely set. At most, there may be one contact VIA 59a in a certain row. However, since the resistance of the polysilicon constituting the ring-shaped gate electrode 45 is high, the optimum ratio is determined in consideration of the driving frequency. In the embodiment, the contact VIA 59a is drawn at a rate of one contact for every two pixels.

  In the present embodiment, the ring-shaped gate electrode 45 of each pixel is connected to the ring-shaped gate electrode 45 of all pixels in the same row among the pixels arranged in a two-dimensional matrix. In practice, all pixels in the same row may be separated into several groups. In that case, at least one contact VIA 59a is formed for the group.

  In FIG. 2, the transfer gate electrode 51 is also made of polysilicon and is second polysilicon formed after the ring-shaped gate electrode 45. The transfer gate electrode 51 connected to the transfer gate electrode wiring 55 via the contact VIA 59b drives a plurality of pixels. In this embodiment, as described in conjunction with FIG. 1, the transfer gate electrodes 51 of two pixels are simultaneously driven by one contact VIA 59b. As described above, the ring-shaped gate electrode 45 and the transfer gate electrode 55 are connected to each other by forming one contact VIA, whereby the aperture ratio can be increased.

FIG. 3 is a sectional view taken along line YY ′ of FIG. 3, the same components as those in FIGS. 1 and 2 are denoted by the same reference numerals, and the description thereof is omitted. As shown in FIG. 3, there is an n ⁺ -type drain electrode diffusion region 48 on the surface of the n-well 43 that is separated from the source electrode diffusion region 46 and the source vicinity region 47. The drain electrode diffusion region 48 is connected to the drain electrode wiring 52 through a contact VIA 59c. A buried p ⁻ -type region 49 is formed in the n-well 43 outside the ring-shaped gate electrode 45, and the photoelectric conversion region (photodiode) 50 shown in FIG.

Between the buried p ⁻ -type region 49 (photodiode 50) and the ring-shaped gate electrode 45, there is a transfer gate electrode 51. In addition, an opening 58 is formed at a position corresponding to the p ⁻ type region 49 (photodiode 50) embedded in the light shielding film 57. The light reaches the photodiode 50 through the opening 58 and is photoelectrically converted.

  Next, the pixel structure of the embodiment of the solid-state imaging device according to the present invention and the overall structure of the imaging device will be described with reference to FIG. 4 expressed by an electric circuit. In the figure, first, pixels are arranged in a pixel spread area 61 in m rows and n columns. In FIG. 4, one pixel 62 of s rows and t columns among these m rows and n columns pixels is represented by an equivalent circuit. The pixel 62 includes a ring-shaped gate MOSFET 63, a photodiode 64, and a transfer gate MOSFET 65. The drain of the ring-shaped gate MOSFET 63 is connected to the n-side terminal of the photodiode 64 and the drain electrode wiring 66 (52 in FIGS. 1 and 3). The source of the transfer gate MOSFET 65 is connected to the p-side terminal of the photodiode 64, and the drain is connected to the back gate of the ring-shaped gate MOSFET 63.

In FIG. 3, the ring-shaped gate MOSFET 63 has an n ⁺ -type source electrode diffusion region 46 and an n ⁺ -type drain electrode diffusion region 48 with the source vicinity region 47 immediately below the ring-shaped gate electrode 45 as a gate region. An n-channel MOSFET is an amplification output transistor that converts input charges into optical signals and amplifies and outputs the signals. In FIG. 3, the transfer gate MOSFET 65 has an n well 43 just below the transfer gate electrode 51 as a gate region, a p ⁻ type region 49 embedded with a photodiode 50 as a source electrode diffusion region, and a source vicinity region 47 as a drain electrode diffusion. This is a p-channel MOSFET as a region.

  In FIG. 4, in order to read a signal for one frame from each pixel of m rows and n columns, there is a circuit 67 for generating a frame start signal for giving a signal to start reading. This frame start signal may be given from outside the imaging apparatus. This frame start signal is supplied to the vertical shift register 68. The vertical shift register 68 outputs a signal indicating which row of pixels is read out from each pixel of m rows and n columns.

  The pixels in each row are connected to a control circuit that controls the potentials of the ring-shaped gate electrode, transfer gate electrode, and drain electrode, and these control circuits are supplied with the output signal of the vertical register 68. For example, the ring-shaped gate electrode of each pixel in the s-th row is connected to the ring-shaped gate potential control circuit 70 via a ring-shaped gate electrode wiring 69 (corresponding to 53 in FIGS. 1 and 2), and transfer of each pixel is performed. The gate electrode is connected to the transfer gate potential control circuit 72 via a transfer gate electrode wiring 71 (corresponding to 55 in FIGS. 1 and 2), and the drain electrode of each pixel is a drain electrode wiring 66 (FIGS. 1 and 3). To the drain potential control circuit 73. Each control circuit 70, 72, 73 is supplied with an output signal from the vertical shift register 68.

  Since the ring-shaped gate electrode is controlled for each row, wiring is performed in the horizontal direction. However, since the transfer gate electrode is controlled simultaneously for all pixels, the wiring direction is not limited and the vertical direction may be used. Here, it is expressed as wiring in the horizontal direction. The drain potential control circuit 73 controls all the pixels at the same time, but may be controlled for each row. Therefore, the drain potential control circuit 73 is represented by being connected to both the frame start signal and the vertical register 68.

  The source electrode of the ring-shaped gate MOSFET 63 of the pixel 62 is branched into two via a source electrode wiring 74 (corresponding to 54 in FIGS. 1 and 3), one of which controls the source electrode potential via the switch SW1. The other is connected to the circuit 75, and the other is connected to the signal readout circuit 76 via the switch SW2. When reading the signal, the switch SW1 is turned off and the switch SW2 is turned on. When the source potential is controlled, the switch SW1 is turned on and the switch SW2 is turned off. Since the signal is output in the vertical direction, the wiring direction of the source electrode is set to be vertical.

  The signal readout circuit 76 is configured as follows. The output of the pixel 62 is performed from the source of the ring-shaped gate MOSFET 63, and a load, for example, a current source 77 is connected to the output line 74. Therefore, it is a source follower circuit. One end of each of the capacitor C1 and the capacitor C2 is connected to the current source 77 via the switch sc1 and the switch sc2. One end of each of the capacitors C1 and C2 whose other ends are grounded is connected to the inverting input terminal and the non-inverting input terminal of the differential amplifier 78, and the potential difference between the capacitors C1 and C2 is output from the differential amplifier 78. It is like that.

  Such a signal readout circuit 76 is called a CDS circuit (correlated double sampling circuit), and various circuits other than the method described here have been proposed, and the circuit is not limited to this circuit. The signal output from the signal readout circuit 76 is output via the output switch swt. The output switches swt in the same column are subjected to switching control by a signal output from the horizontal shift register 79.

Next, a method for driving the solid-state imaging device shown in FIG. 4 will be described with reference to the timing chart of FIG. First, in the period shown in FIG. 5A, light is incident on the embedded photodiode (50 in FIG. 1, 64 in FIG. 4, etc.), and an electron / hole pair is generated by the photoelectric conversion effect. Holes are accumulated in the p ⁻ type region 49. At this time, the potential of the transfer gate electrode 51 is the same as the drain potential Vdd, and the transfer gate MOSFET 65 is off. These accumulations are performed at the same time as the previous frame read operation is being performed.

  In the subsequent period shown in FIG. 5 (2), when the reading of the previous frame is completed, a new frame start signal is transmitted as shown in FIG. First, all the pixels are performed simultaneously from the photodiode (50 in FIG. 1, 64 in FIG. 4) to the source vicinity region (47 in FIGS. 2 and 3) from the ring-shaped gate electrode (45 in FIGS. 1 to 3). Is to transfer the hole to. Therefore, as shown in FIG. 5B, the transfer gate control signal output from the transfer gate potential control circuit 72 falls from Vdd to Low2, the potential of the transfer gate electrode (51 in FIGS. 1 to 3) becomes Low2, The transfer gate MOSFET 65 is turned on.

  At this time, the potential of the ring-shaped gate electrode wiring 69 controlled by the ring-shaped gate potential control circuit 70 changes from Low to Low1 as shown in FIG. 5C, but Low2 is larger than Low1. Low1 may be the same as Low. Most simply, Low1 = Low = 0 (V) is set.

  On the other hand, the source potential of all the pixels including the source potential supplied from the source potential control circuit 75 to the source of the ring-shaped gate MOSFET 63 from the source electrode wiring 74 via the switch SW1 is as shown in FIG. The potential is set to S1. S1> Low1, which keeps the ring-shaped gate MOSFET 63 off and prevents current from flowing. As a result, charges (holes) accumulated in the photodiodes of all the pixels are transferred all at once under the ring-shaped gate electrodes of the corresponding pixels.

  In the region below the ring-shaped gate electrode 45 shown in FIG. 3, the source vicinity region 47 has the lowest potential, so the holes accumulated in the photodiode reach the source vicinity region 47 and are accumulated there. As a result of the accumulation of holes, the potential of the source vicinity region 47 increases.

Subsequently, in the period shown in FIG. 5 (3), as shown in FIG. 5 (B), the transfer gate electrode becomes Vdd again, and the transfer gate MOSFET 65 is turned off. As a result, in the photodiode (50 in FIG. 1, 64 in FIG. 4, etc.), electron-hole pairs are generated again due to the photoelectric conversion effect, and holes start to accumulate in the buried p ⁻ -type region 49 of the photodiode. This accumulation operation is continued until the next charge transfer.

  On the other hand, since the read operation is performed in units of rows, the potential of the ring-shaped gate electrode is low as shown in FIG. 5C in the period (3) of reading the first row to the (s−1) th row. In this state, a standby state is entered while holes are accumulated in the source vicinity region 47. The source potential can take various values depending on the value of the signal from the pixel while the signal is read from another row. The ring-shaped gate electrode potential can take various values for each row, but is set to Low in the s-th row, and the ring-shaped gate MOSFET 63 is in an off state.

  In the subsequent period shown in FIGS. 5 (4) to (6), pixel signal readout is performed. This signal readout operation will be described representatively for the pixel 62 in the sth row and the tth column. First, in the state where holes are accumulated in the source vicinity region 47, the output signal of the vertical shift register 68 shown in FIG. However, the potential of the ring-shaped gate electrode 45 is controlled by the control signal output from the ring-shaped gate potential control circuit 70 to the ring-shaped gate electrode wiring 69 in the period (4) in the low level as shown in FIG. Is raised from Low to Vg1, as shown in FIG.

Here, the potential Vg1 is between the potentials Low, Low1, and Vdd described above.
Low ≦ Low1 ≦ Vg1 ≦ Vdd (where Low <Vdd)
Is an electric potential that holds the inequality. In the period (4), the switch SW1 is turned off as shown in FIG. 5I, the switch SW2 is turned on as shown in FIG. 5J, and the switch sc1 is turned on as shown in FIG. The switch sc2 is turned off as shown in FIG. As a result, the source follower circuit connected to the source of the ring-shaped gate MOSFET 63 works, and the source potential of the ring-shaped gate MOSFET 63 becomes S2 (= Vg1-Vth1) in the period (4) as shown in FIG. Become. Here, Vth1 is a threshold voltage of the ring-shaped gate MOSFET 63 in a state where there is a hole in the back gate (source vicinity region 47). The source potential S2 is stored in the capacitor C1 through the switch sc1 that is turned on.

  In the subsequent period shown in FIG. 5 (5), the potential of the ring-shaped gate electrode 45 is set as shown in FIG. 5 (K) by the control signal output from the ring-shaped gate potential control circuit 70 to the ring-shaped gate electrode wiring 69. At the same time as raising to High1, the switch SW1 is turned on and the switch SW2 is turned off as shown in FIGS. 1I and 1J, and the source potential output from the source potential control circuit 75 is shown in FIG. Raise to Highs as shown. Here, High1 and Highs> Low1.

  The values of the potentials High1 and Highs may be the same or different, but High1 and Highs ≦ Vdd are desirable for simplicity of design. In a simple setting, High1 = Highs = Vdd. Further, it is desirable to set the potential so that the ring-shaped gate MOSFET 63 is turned on and no current flows. As a result, the potential of the source vicinity region 47 rises, and holes are discharged to the epitaxial layer 42 beyond the barrier of the n-well 43 (reset).

  In the subsequent period shown in FIG. 5 (6), the same signal readout state as in the period (4) is set again. However, unlike the period (4), as shown in FIGS. 5M and 5N, the switch sc1 is turned off and the switch sc2 is turned on. The ring-shaped gate electrode has the same Vg1 as that in the period (4) as shown in FIG. However, in this period (6), holes are discharged to the substrate in the immediately preceding period (5), and no holes exist in the source vicinity region 47. Therefore, the source potential of the ring-shaped gate MOSFET 63 is as shown in FIG. In the period (6), S0 (= Vg1-Vth0) is obtained. Here, Vth0 is a threshold voltage of the ring-shaped gate MOSFET 63 in a state where there is no hole in the back gate (source vicinity region 47).

  The source potential S0 is stored in the capacitor C2 through the switch sc2 that is turned on. The differential amplifier 78 outputs the potential difference between the capacitors C1 and C2. That is, the differential amplifier 78 outputs (Vth0−Vth1). This output value (Vth0-Vth1) is a change in threshold value due to hole charge. Thereafter, among the pulses shown in FIG. 5F output from the horizontal shift register 79, the output switch swt in FIG. 4 is turned on based on the output pulse in the t-th column shown in FIG. As schematically shown by hatching in FIG. 5 (P), the threshold change due to the Hall charge from the differential amplifier 78 is output outside the sensor as the output signal Vout of the pixel 62 during the ON period.

  Subsequently, in the period indicated by (7) in FIG. 5, the potential of the ring-shaped gate electrode 45 is set to low again as shown in FIG. 5B, and all the p-type regions 47 near the source have no holes. It waits until the signal processing of the next row is completed (until the readout of the pixels of the s + 1 row to the nth row is completed). During these readout periods, the photodiode 64 is accumulating holes due to the photoelectric conversion effect. Thereafter, the process returns to the period (1) and repeats from the hole transfer. Thereby, the output signal shown in FIG. 5G is read from each pixel.

  In the solid-state imaging device having the configuration shown in FIGS. 1 to 3, the ring-shaped gate MOSFET 63 having the ring-shaped gate electrode 45 is an amplification MOSFET, and the amplification MOSFET is provided in each pixel as shown in FIG. This is a kind of CMOS sensor. This CMOS sensor realizes a global shutter by simultaneously transferring charges (holes) accumulated in the photodiode to the source vicinity region 47 under the ring-shaped gate electrode of the corresponding pixel. is doing.

  Note that the potential supply of the source electrode wiring 74 at the time of resetting in the period (5) of FIG. That is, in the period (5), both the switches SW1 and SW2 are turned off, and the source electrode wiring 74 is floated. Here, when the potential of the ring-shaped gate electrode wiring 69 is High1, the ring-shaped gate MOSFET 63 is turned on, current is supplied from the drain to the source electrode, and the source electrode potential rises. As a result, the potential of the source vicinity region 47 is raised, and holes are discharged to the p-type epitaxial layer 42 beyond the barrier of the n-well 43 (reset). The source electrode potential when the holes are completely discharged becomes High1-Vth0. This method can reduce the number of transistors that supply Highs in the source potential control circuit 75, and as a result, the chip area can be reduced.

  Next, another embodiment of the present invention will be described. FIG. 6 shows a top view of another embodiment of the solid-state imaging device according to the present invention. In the figure, the same components as those in FIG. In the embodiment shown in FIGS. 1 to 3, the aperture ratio is increased by setting the contacts VIA 59a and 59b to the ring-shaped gate electrode 45 and the transfer gate electrode 51 at a ratio of one for a plurality of pixels.

  On the other hand, in the embodiment shown in FIG. 6, the contact VIA connecting the drain electrode wiring 52 and the drain electrode diffusion region in the pixel is set to a ratio of one for a plurality of pixels as indicated by 59e. There is a feature. Thereby, in this embodiment, the aperture ratio is further increased and the sensitivity is further improved as compared with the above embodiment.

1 is a plan view of an embodiment of a solid-state imaging device of the present invention. It is sectional drawing which follows the X-X 'line | wire of FIG. It is sectional drawing which follows the Y-Y 'line | wire of FIG. It is the figure expressed with the electric circuit about the pixel structure of one Embodiment of the solid-state imaging device of this invention, and the structure of the whole imaging device. 5 is a timing chart for explaining the operation of FIG. 4. It is a top view of other embodiments of a solid imaging device of the present invention.

Explanation of symbols

10 1 pixel 43 n well 44 gate oxide film 45 ring-shaped gate electrode 46 source electrode diffusion region 47 near source region 48 drain electrode diffusion region 49 buried p ^- type region 50, 64 photodiode 51 transfer gate electrode 52, 66 drain electrode Wiring 53, 69 Ring-shaped gate electrode wiring 54, 74 Source electrode wiring 55, 71 Transfer gate electrode wiring 59a to 59e Contact VIA (connection point)
61 pixel covering area 62 pixels (s rows and t columns)
63 Ring-shaped gate MOSFET
65 Transfer gate MOSFET
67 Frame start signal generation circuit 68 Vertical shift register 70 Ring-shaped gate potential control circuit 72 Transfer gate potential control circuit 73 Drain potential control circuit 75 Source potential control circuit 76 Signal readout circuit 77 Current source (load)
78 Differential amplifier 79 Horizontal shift register

Claims (2)

A photoelectric conversion region for accumulating incident light as charges by photoelectric conversion, converts the input charges into an optical signal, and an amplifier output transistor that amplifies and outputs the electric charge accumulated in the photoelectric conversion region pixels and a charge transfer means for transferring to said amplifier output transistor, Ri Contact are regularly arranged in the row direction and a column direction, are accumulated by photoelectric conversion at the same time exposed to the photoelectric conversion region of all pixels the charge, after transferring the amplified output transistor of all pixels at once by said charge transfer means for all the pixels, Bei example a driving means for outputting the optical signal as an imaging signal from the amplifier output transistor of each pixel ,
The amplification output transistor surrounds a ring-shaped gate electrode on the substrate, a source electrode diffusion region provided at a position of the substrate corresponding to a central opening of the ring-shaped gate electrode, and the source electrode diffusion region, And a source vicinity region provided on the substrate so as not to reach the outer periphery of the ring-shaped gate electrode, and a transistor that outputs the amount of input charge as a change in threshold value,
The charge transfer means includes a transfer gate electrode that transfers the charge accumulated in the photoelectric conversion region to the source vicinity region,
The ring-shaped gate electrodes of pixels adjacent in the row direction are connected to each other by a common first polysilicon layer and are connected to a first signal wiring via a first contact in common. ,
The transfer gate electrodes of pixels adjacent in the row direction are connected to each other by a common second polysilicon layer and connected to the second signal wiring via a second contact in common,
The driving means simultaneously drives the ring-shaped gate electrode commonly connected to the first contact via the first signal wiring, and is connected to the second contact via the second signal wiring. A solid-state imaging device , wherein the transfer gate electrodes connected in common are simultaneously driven. The solid-state imaging device according to claim 1, wherein the first contact and the second contact are provided every other pixel in the row direction .

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