JP4666960B2 - 静電チャック - Google Patents
静電チャック Download PDFInfo
- Publication number
- JP4666960B2 JP4666960B2 JP2004190462A JP2004190462A JP4666960B2 JP 4666960 B2 JP4666960 B2 JP 4666960B2 JP 2004190462 A JP2004190462 A JP 2004190462A JP 2004190462 A JP2004190462 A JP 2004190462A JP 4666960 B2 JP4666960 B2 JP 4666960B2
- Authority
- JP
- Japan
- Prior art keywords
- aluminum nitride
- dielectric layer
- electrostatic chuck
- electrode
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 78
- 239000002245 particle Substances 0.000 claims description 31
- 239000011148 porous material Substances 0.000 claims description 29
- 239000000919 ceramic Substances 0.000 claims description 20
- 239000013078 crystal Substances 0.000 claims description 12
- 230000001590 oxidative effect Effects 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 229910052684 Cerium Inorganic materials 0.000 claims description 4
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 69
- 235000012431 wafers Nutrition 0.000 description 57
- 230000015556 catabolic process Effects 0.000 description 28
- 238000000034 method Methods 0.000 description 21
- 239000004065 semiconductor Substances 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000010304 firing Methods 0.000 description 7
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 6
- 239000011812 mixed powder Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- 238000000465 moulding Methods 0.000 description 4
- 229920005822 acrylic binder Polymers 0.000 description 3
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 3
- 238000007606 doctor blade method Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000007731 hot pressing Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 238000007088 Archimedes method Methods 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- DRVWBEJJZZTIGJ-UHFFFAOYSA-N cerium(3+);oxygen(2-) Chemical group [O-2].[O-2].[O-2].[Ce+3].[Ce+3] DRVWBEJJZZTIGJ-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Images
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
2:板状セラミックス体
2a:ウェハ載置面
2b:誘電体層
3:電極
4:給電端子
21:絶縁性誘電層
22:電極
23:板状体
Claims (4)
- 窒化アルミニウムを主成分とする板状セラミックス体の一方の主面をウェハ載置面とし、上記板状セラミックス体の他方の主面または内部に電極を備えた静電チャックであって、上記電極から上記ウェハ載置面までの平均距離が0.015cm以上、上記電極と上記ウェハ載置面の間の誘電体層の体積固有抵抗値と上記平均距離との積が1×107〜5×1016Ω・cm2であるとともに、上記誘電体層を形成する窒化アルミニウムの平均粒径が1〜20μm、且つ上記誘電体層の開気孔率が1%以下、さらに上記誘電体層には粒内気孔と粒界気孔が存在し、該粒界気孔の平均径が上記窒化アルミニウムの平均結晶粒径より小さく、上記誘電体層の粒界気孔の比率Sgと粒内気孔の比率Scとの比Sg/Scが1.0以下であることを特徴とする静電チャック。
- 上記誘電体層が窒化アルミニウムを主成分として3a族金属酸化物からなる副成分を0.2〜15質量%含むことを特徴とする請求項1に記載の静電チャック。
- 上記3a族金属がセリウムであることを特徴とする請求項2に記載の静電チャック。
- 請求項1〜3に記載する静電チャックであって、上記窒化アルミニウムからなる板状セラミックス体が、0.2〜200MPaの非酸化性雰囲気中にて1800〜1900℃以下の温度で0.5〜20時間以内保持して焼結させたものであることを特徴とする静電チャック。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004190462A JP4666960B2 (ja) | 2004-06-28 | 2004-06-28 | 静電チャック |
KR1020067027690A KR101142000B1 (ko) | 2004-06-28 | 2005-06-27 | 정전척 |
PCT/JP2005/011743 WO2006001425A1 (ja) | 2004-06-28 | 2005-06-27 | 静電チャック |
US11/571,347 US7586734B2 (en) | 2004-06-28 | 2005-06-27 | Electrostatic chuck |
TW094121434A TWI267940B (en) | 2004-06-28 | 2005-06-27 | Electrostatic chuck |
CNB2005800290751A CN100470756C (zh) | 2004-06-28 | 2005-06-27 | 静电卡盘 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004190462A JP4666960B2 (ja) | 2004-06-28 | 2004-06-28 | 静電チャック |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006013257A JP2006013257A (ja) | 2006-01-12 |
JP4666960B2 true JP4666960B2 (ja) | 2011-04-06 |
Family
ID=35780115
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004190462A Expired - Fee Related JP4666960B2 (ja) | 2004-06-28 | 2004-06-28 | 静電チャック |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4666960B2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5307476B2 (ja) * | 2008-08-20 | 2013-10-02 | 株式会社フェローテックセラミックス | 表面処理セラミックス部材およびその製造方法 |
CA2801857C (en) | 2010-06-08 | 2018-01-23 | Denki Kagaku Kogyo Kabushiki Kaisha | Aluminium nitride substrate for circuit board and production method thereof |
JP7161892B2 (ja) * | 2018-08-31 | 2022-10-27 | 日本特殊陶業株式会社 | 電極埋設部材の製造方法 |
JP7528038B2 (ja) | 2021-08-24 | 2024-08-05 | 東京エレクトロン株式会社 | 静電チャック、基板支持器、プラズマ処理装置及び静電チャックの製造方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10335438A (ja) * | 1997-05-30 | 1998-12-18 | Chichibu Onoda Cement Corp | 静電チャック及び半導体処理装置並びにそれらに好適な絶縁材料 |
JPH11162698A (ja) * | 1997-11-28 | 1999-06-18 | Kyocera Corp | プラズマ発生用部材 |
JP2001089243A (ja) * | 1999-09-27 | 2001-04-03 | Kyocera Corp | 窒化アルミニウム質セラミックス |
JP2001302351A (ja) * | 2000-04-18 | 2001-10-31 | Nippon Tungsten Co Ltd | AlN−Al2O3複合材料 |
JP2002249379A (ja) * | 2000-12-21 | 2002-09-06 | Ngk Insulators Ltd | 窒化アルミニウム焼結体及び半導体製造装置用部材 |
JP2003261383A (ja) * | 2002-03-11 | 2003-09-16 | Taiheiyo Cement Corp | 窒化アルミニウム焼結体およびそれを用いた静電チャック |
JP3457477B2 (ja) * | 1995-09-06 | 2003-10-20 | 日本碍子株式会社 | 静電チャック |
-
2004
- 2004-06-28 JP JP2004190462A patent/JP4666960B2/ja not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3457477B2 (ja) * | 1995-09-06 | 2003-10-20 | 日本碍子株式会社 | 静電チャック |
JPH10335438A (ja) * | 1997-05-30 | 1998-12-18 | Chichibu Onoda Cement Corp | 静電チャック及び半導体処理装置並びにそれらに好適な絶縁材料 |
JPH11162698A (ja) * | 1997-11-28 | 1999-06-18 | Kyocera Corp | プラズマ発生用部材 |
JP2001089243A (ja) * | 1999-09-27 | 2001-04-03 | Kyocera Corp | 窒化アルミニウム質セラミックス |
JP2001302351A (ja) * | 2000-04-18 | 2001-10-31 | Nippon Tungsten Co Ltd | AlN−Al2O3複合材料 |
JP2002249379A (ja) * | 2000-12-21 | 2002-09-06 | Ngk Insulators Ltd | 窒化アルミニウム焼結体及び半導体製造装置用部材 |
JP2003261383A (ja) * | 2002-03-11 | 2003-09-16 | Taiheiyo Cement Corp | 窒化アルミニウム焼結体およびそれを用いた静電チャック |
Also Published As
Publication number | Publication date |
---|---|
JP2006013257A (ja) | 2006-01-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4744855B2 (ja) | 静電チャック | |
WO2006001425A1 (ja) | 静電チャック | |
JP2009238949A (ja) | 静電チャック及びその製造方法 | |
JP4482472B2 (ja) | 静電チャック及びその製造方法 | |
JP7248653B2 (ja) | 複合焼結体、半導体製造装置部材および複合焼結体の製造方法 | |
US20200231509A1 (en) | Method for manufacturing large ceramic co-fired articles | |
JP2003282688A (ja) | 静電チャック | |
JP4666960B2 (ja) | 静電チャック | |
JP4043219B2 (ja) | 静電チャック | |
JP2000277599A (ja) | 静電チャック | |
JP4307218B2 (ja) | ウェハ保持部材及びその製造方法 | |
JP2000143349A (ja) | 窒化アルミニウム質焼結体およびそれを用いた静電チャック | |
JP2002110772A (ja) | 電極内蔵セラミックス及びその製造方法 | |
JP2006044980A (ja) | 窒化アルミニウム焼結体 | |
JP3965468B2 (ja) | 静電チャック | |
JP2004296579A (ja) | 静電チャック及びその製造方法 | |
JP3370532B2 (ja) | 静電チャック | |
JP5192221B2 (ja) | セラミックス焼結体及びそれを用いた静電チャック | |
WO2016121286A1 (ja) | 試料保持具 | |
JPH10189698A (ja) | 静電チャック | |
JP4111013B2 (ja) | 半導体製造装置用ウェハ保持体およびそれを搭載した半導体製造装置 | |
JP3588253B2 (ja) | 静電チャック | |
TW200415693A (en) | Wafer holder for semiconductor manufacturing device and semiconductor manufacturing device in which it is installed | |
JP2006056731A (ja) | 窒化アルミニウム焼結体およびそれを用いた静電チャック | |
JP2007186382A (ja) | 窒化アルミニウム焼結体 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070516 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100525 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100722 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20101214 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110111 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140121 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4666960 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |