JP4569423B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP4569423B2 JP4569423B2 JP2005251090A JP2005251090A JP4569423B2 JP 4569423 B2 JP4569423 B2 JP 4569423B2 JP 2005251090 A JP2005251090 A JP 2005251090A JP 2005251090 A JP2005251090 A JP 2005251090A JP 4569423 B2 JP4569423 B2 JP 4569423B2
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- semiconductor device
- solder
- semiconductor element
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Images
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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Description
半導体素子と、接続部材を介して前記半導体素子と接続される被接続部材と、を有する半導体装置であって、前記接続部材は、前記半導体素子と、表面にNi層を形成した前記被接続部材との間に配置したCuを3〜7wt%有するCu6Sn5相を含むSn‐Cuはんだを加熱溶融及び凝固をさせ析出させたCu6Sn5化合物により前記Ni層の少なくとも一部を覆うことにより形成されていることを特徴とする半導体装置。
接続構造は、実施例1−6と同じである。その結果は表1に示す通り、初期接続強度の80%以上の強度を有している場合を○、80%未満の強度の場合を×で表記した。比較例1、2において、-40℃(30min.)/200℃(30min.)500サイクルの温度サイクル試験後、初期接続強度の80%以上の強度を維持することを確認した。しかしながら、210℃1000hの高温放置試験後では、比較例1、2ともに初期接続強度の80%未満の強度となった。接続断面を観察すると、図10,11のようなボイド14が接続界面に形成されていた。高温放置により界面反応が進み、化合物層の成長に伴う体積変化で生じたボイド形成により、接続強度が低下したと考えられる。図13に、一例としてSn-3Ag-0.5Cuはんだで接続したサンプルを210℃で1000h高温放置したときの接続界面の断面を示す。Cu-Sn化合物のバリア層が形成されないため、SnとNiが反応してNi層が完全に消失し、更に下地のCuまでもSnと反応しCu-Sn化合物層が厚く形成されている。その結果、大きな体積変化が生じボイドが形成され、良好な接続状況を維持することができなくなる。
101 表面実装部品、102 プリント基板、103 チップ部品、104 挿入実装部品、105 フレーム、106 モールド樹脂、107 リード、108 ワイヤ、109 モジュール基板、110 はんだボール
Claims (5)
- 半導体素子と、前記半導体素子と接続される被接続部材と、を有する半導体装置の製造方法であって、
前記半導体素子と、表面にNi層を形成した前記被接続部材との間にCuを3〜7wt%有するCu6Sn5相を含むSn‐Cuはんだを配置する工程と、
前記Sn‐Cuはんだを加熱してCu6Sn5化合物を析出させ、前記析出したCu6Sn5化合物により前記Ni層の少なくとも一部を覆う工程と、
を有することを特徴とする半導体装置の製造方法。 - 請求項1記載の半導体装置の製造方法であって、
前記Sn‐Cuはんだは箔またはペーストまたはワイヤのいずれかの形状であり、前記被接続部材はプリント基板であることを特徴とする半導体装置の製造方法。 - 請求項1または請求項2に記載の半導体装置の製造方法であって、
前記半導体素子の表面はNiで覆われており、前記半導体装置の表面は前記被接続部材に対向していることを特徴とする半導体装置の製造方法。 - 半導体素子と、前記半導体素子の第一の面と接続され表面をNiによりめっきされている支持部材と、前記支持部材により支持され表面をNiによりめっきされている前記半導体素子の第二の面と接続されるリード電極体と、を有する半導体装置の製造方法であって、
前記半導体素子と前記支持部材との間にCuを3〜7wt%有するCu6Sn5相を含むSn‐Cuはんだを配置する工程と、
前記Sn‐Cuはんだを加熱してCu6Sn5化合物を析出させ、前記析出したCu6Sn5化合物により前記支持部材の表面のNi層の少なくとも一部を覆う工程と、
を有することを特徴とする半導体装置の製造方法。 - 請求項4記載の半導体装置の製造方法であって、
さらに、前記Cu6Sn5を含むSn‐Cuはんだを、前記半導体素子と前記リード電極体との間に配置する工程を有することを特徴とする半導体装置の製造方法。
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
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JP2005251090A JP4569423B2 (ja) | 2005-08-31 | 2005-08-31 | 半導体装置の製造方法 |
EP10007226.3A EP2234155B1 (en) | 2005-08-31 | 2006-05-31 | Method of fabricating a semiconductor device |
EP06252827.8A EP1760783B1 (en) | 2005-08-31 | 2006-05-31 | Semiconductor device |
US11/471,476 US20070057021A1 (en) | 2005-08-31 | 2006-06-21 | Semiconductor device and automotive AC generator |
CNA2006101154017A CN101123229A (zh) | 2005-08-31 | 2006-08-08 | 半导体装置及半导体装置的制造方法 |
CN201110265728.3A CN102324405B (zh) | 2005-08-31 | 2006-08-08 | 半导体装置的制造方法 |
CN2010100014608A CN101783304B (zh) | 2005-08-31 | 2006-08-08 | 半导体装置的制造方法 |
US12/232,676 US7964492B2 (en) | 2005-08-31 | 2008-09-22 | Semiconductor device and automotive AC generator |
US13/117,544 US8421232B2 (en) | 2005-08-31 | 2011-05-27 | Semiconductor device and automotive ac generator |
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JP2005251090A JP4569423B2 (ja) | 2005-08-31 | 2005-08-31 | 半導体装置の製造方法 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10312211B2 (en) | 2015-11-16 | 2019-06-04 | Toyota Jidosha Kabushiki Kaisha | Method of manufacturing semiconductor device |
US11195815B2 (en) | 2019-01-11 | 2021-12-07 | Denso Corporation | Semiconductor device and manufacturing method thereof with Cu and Sn intermetallic compound |
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---|---|---|---|---|
WO2009027888A2 (en) * | 2007-08-24 | 2009-03-05 | Nxp B.V. | Solderable structure |
JP5331322B2 (ja) * | 2007-09-20 | 2013-10-30 | 株式会社日立製作所 | 半導体装置 |
KR20090042556A (ko) * | 2007-10-26 | 2009-04-30 | 삼성전기주식회사 | 인쇄회로기판 및 그 제조방법 |
JP4961398B2 (ja) | 2008-06-30 | 2012-06-27 | 株式会社日立製作所 | 半導体装置 |
EP2340554B1 (en) * | 2008-09-18 | 2017-05-10 | Imec | Methods and systems for material bonding |
JP2010087072A (ja) * | 2008-09-30 | 2010-04-15 | Hitachi Automotive Systems Ltd | パワー半導体モジュールおよびこれを用いたインバータシステム |
WO2010047139A1 (ja) * | 2008-10-24 | 2010-04-29 | 三菱電機株式会社 | はんだ合金および半導体装置 |
JP4921502B2 (ja) * | 2009-02-26 | 2012-04-25 | 株式会社日立製作所 | 半導体装置 |
WO2010119489A1 (ja) * | 2009-04-14 | 2010-10-21 | 三菱伸銅株式会社 | 導電部材及びその製造方法 |
JP5473388B2 (ja) | 2009-04-24 | 2014-04-16 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
EP2444999A4 (en) | 2009-06-18 | 2012-11-14 | Rohm Co Ltd | SEMICONDUCTOR DEVICE |
CN101988165B (zh) * | 2009-07-31 | 2014-06-18 | 中国科学院金属研究所 | 一种抗高温氧化的无铅搪锡合金 |
JP2011044624A (ja) * | 2009-08-24 | 2011-03-03 | Hitachi Ltd | 半導体装置および車載用交流発電機 |
DE102009041641B4 (de) | 2009-09-17 | 2020-09-24 | Pac Tech-Packaging Technologies Gmbh | Diodenanordnung und Verfahren zur Herstellung einer Diodenanordnung |
US9666501B2 (en) | 2009-10-20 | 2017-05-30 | Rohm Co., Ltd. | Semiconductor device including a lead frame |
JP2013038330A (ja) * | 2011-08-10 | 2013-02-21 | Toshiba Corp | 半導体装置の製造方法及び半導体装置 |
JP5588419B2 (ja) * | 2011-10-26 | 2014-09-10 | 株式会社東芝 | パッケージ |
TWI482231B (zh) * | 2012-10-05 | 2015-04-21 | Univ Nat Chiao Tung | 具有奈米雙晶銅之電性連接體、其製備方法、以及包含其之電性連接結構 |
US8878409B2 (en) | 2012-09-13 | 2014-11-04 | Hamilton Sundstrand Space Systems International, Inc. | Containment band for permanent magnet generator |
JP6281468B2 (ja) | 2014-10-30 | 2018-02-21 | トヨタ自動車株式会社 | 半導体装置とその製造方法 |
JP6287759B2 (ja) * | 2014-10-30 | 2018-03-07 | トヨタ自動車株式会社 | 半導体装置とその製造方法 |
WO2016079881A1 (ja) * | 2014-11-21 | 2016-05-26 | 株式会社日立製作所 | 半導体パワーモジュールおよびその製造方法ならびに移動体 |
WO2018020640A1 (ja) * | 2016-07-28 | 2018-02-01 | 三菱電機株式会社 | 半導体装置 |
DE102020130638A1 (de) * | 2019-12-11 | 2021-06-17 | Infineon Technologies Ag | Lotmaterial, schichtstruktur, chipgehäuse, verfahren zum bilden einer schichtstruktur, verfahren zum bilden eines chipgehäuses, chipanordnung und verfahren zum bilden einer chipanordnung |
JP7492375B2 (ja) * | 2020-05-26 | 2024-05-29 | 株式会社 日立パワーデバイス | 半導体装置 |
JP7553194B2 (ja) * | 2020-12-23 | 2024-09-18 | ミネベアパワーデバイス株式会社 | 半導体装置およびその製造方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0353780B2 (ja) * | 1985-01-31 | 1991-08-16 | ||
JP2802530B2 (ja) * | 1990-02-06 | 1998-09-24 | 株式会社日立製作所 | 電子装置 |
JP2002305213A (ja) * | 2000-12-21 | 2002-10-18 | Hitachi Ltd | はんだ箔および半導体装置および電子装置 |
JP2003309223A (ja) * | 2002-04-17 | 2003-10-31 | Hitachi Ltd | 半導体装置及びその製造方法、電子装置及びその製造方法 |
JP2005184976A (ja) * | 2003-12-19 | 2005-07-07 | Hitachi Ltd | 車載用交流発電機 |
JP2005252030A (ja) * | 2004-03-04 | 2005-09-15 | Hitachi Metals Ltd | 鉛フリー半田材料および半田材料の製造方法 |
JP2005252029A (ja) * | 2004-03-04 | 2005-09-15 | Renesas Technology Corp | 半導体装置およびその製造方法、電子装置ならびに実装構造体 |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52147065A (en) | 1976-06-01 | 1977-12-07 | Mitsubishi Electric Corp | Semiconductor device |
US5006922A (en) * | 1990-02-14 | 1991-04-09 | Motorola, Inc. | Packaged semiconductor device having a low cost ceramic PGA package |
US5527628A (en) * | 1993-07-20 | 1996-06-18 | Iowa State University Research Foudation, Inc. | Pb-free Sn-Ag-Cu ternary eutectic solder |
JP3250635B2 (ja) | 1994-02-04 | 2002-01-28 | サンケン電気株式会社 | 半導体装置 |
US5798566A (en) * | 1996-01-11 | 1998-08-25 | Ngk Spark Plug Co., Ltd. | Ceramic IC package base and ceramic cover |
JP3184449B2 (ja) | 1996-02-20 | 2001-07-09 | 松下電子工業株式会社 | 半導体素子用ダイボンド材 |
JP3226213B2 (ja) | 1996-10-17 | 2001-11-05 | 松下電器産業株式会社 | 半田材料及びそれを用いた電子部品 |
US5863493A (en) * | 1996-12-16 | 1999-01-26 | Ford Motor Company | Lead-free solder compositions |
US6190947B1 (en) * | 1997-09-15 | 2001-02-20 | Zowie Technology Corporation | Silicon semiconductor rectifier chips and manufacturing method thereof |
JP3660798B2 (ja) | 1998-02-26 | 2005-06-15 | 京セラ株式会社 | 回路基板 |
EP0985486B1 (en) | 1998-03-26 | 2004-07-21 | Nihon Superior Sha Co., Ltd | Leadless solder |
US7722962B2 (en) * | 2000-12-21 | 2010-05-25 | Renesas Technology Corp. | Solder foil, semiconductor device and electronic device |
JP3910363B2 (ja) | 2000-12-28 | 2007-04-25 | 富士通株式会社 | 外部接続端子 |
JP4656275B2 (ja) * | 2001-01-15 | 2011-03-23 | 日本電気株式会社 | 半導体装置の製造方法 |
JP2002222708A (ja) | 2001-01-24 | 2002-08-09 | Toko Inc | 鉛フリー半田を用いた小型コイル |
JP2002359328A (ja) * | 2001-03-29 | 2002-12-13 | Hitachi Ltd | 半導体装置 |
US6602777B1 (en) * | 2001-12-28 | 2003-08-05 | National Central University | Method for controlling the formation of intermetallic compounds in solder joints |
US6805974B2 (en) * | 2002-02-15 | 2004-10-19 | International Business Machines Corporation | Lead-free tin-silver-copper alloy solder composition |
US6767411B2 (en) * | 2002-03-15 | 2004-07-27 | Delphi Technologies, Inc. | Lead-free solder alloy and solder reflow process |
JP2003297873A (ja) * | 2002-03-29 | 2003-10-17 | Hitachi Ltd | 半導体装置,構造体及び電子装置 |
US6892925B2 (en) * | 2002-09-18 | 2005-05-17 | International Business Machines Corporation | Solder hierarchy for lead free solder joint |
US6854636B2 (en) * | 2002-12-06 | 2005-02-15 | International Business Machines Corporation | Structure and method for lead free solder electronic package interconnections |
JP2004214517A (ja) * | 2003-01-08 | 2004-07-29 | Hitachi Ltd | 半導体装置 |
US6867503B2 (en) * | 2003-05-07 | 2005-03-15 | Texas Instruments Incorporated | Controlling interdiffusion rates in metal interconnection structures |
US7132746B2 (en) * | 2003-08-18 | 2006-11-07 | Delphi Technologies, Inc. | Electronic assembly with solder-bonded heat sink |
EP1658637A1 (de) * | 2003-08-18 | 2006-05-24 | Robert Bosch Gmbh | Einpressdiode mit versilbertem drahtanschluss |
DE10339462A1 (de) * | 2003-08-27 | 2005-03-31 | Infineon Technologies Ag | Verfahren zum Befestigen eines Anschlussbügels /-beins an einem Halbleiterchip |
US7605481B2 (en) * | 2003-10-24 | 2009-10-20 | Nippon Mining & Metals Co., Ltd. | Nickel alloy sputtering target and nickel alloy thin film |
JP2005288458A (ja) * | 2004-03-31 | 2005-10-20 | Toshiba Corp | 接合体、半導体装置、接合方法、及び半導体装置の製造方法 |
US20050275096A1 (en) * | 2004-06-11 | 2005-12-15 | Kejun Zeng | Pre-doped reflow interconnections for copper pads |
CN1269613C (zh) * | 2004-08-24 | 2006-08-16 | 陈明汉 | 一种改进型Sn-0.7wt%Cu无铅焊料 |
JP2006100739A (ja) * | 2004-09-30 | 2006-04-13 | Toshiba Corp | 接合体、半導体装置、接合方法及び半導体装置の製造方法 |
-
2005
- 2005-08-31 JP JP2005251090A patent/JP4569423B2/ja active Active
-
2006
- 2006-05-31 EP EP06252827.8A patent/EP1760783B1/en active Active
- 2006-05-31 EP EP10007226.3A patent/EP2234155B1/en active Active
- 2006-06-21 US US11/471,476 patent/US20070057021A1/en not_active Abandoned
- 2006-08-08 CN CN201110265728.3A patent/CN102324405B/zh active Active
- 2006-08-08 CN CN2010100014608A patent/CN101783304B/zh active Active
- 2006-08-08 CN CNA2006101154017A patent/CN101123229A/zh active Pending
-
2008
- 2008-09-22 US US12/232,676 patent/US7964492B2/en active Active
-
2011
- 2011-05-27 US US13/117,544 patent/US8421232B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0353780B2 (ja) * | 1985-01-31 | 1991-08-16 | ||
JP2802530B2 (ja) * | 1990-02-06 | 1998-09-24 | 株式会社日立製作所 | 電子装置 |
JP2002305213A (ja) * | 2000-12-21 | 2002-10-18 | Hitachi Ltd | はんだ箔および半導体装置および電子装置 |
JP2003309223A (ja) * | 2002-04-17 | 2003-10-31 | Hitachi Ltd | 半導体装置及びその製造方法、電子装置及びその製造方法 |
JP2005184976A (ja) * | 2003-12-19 | 2005-07-07 | Hitachi Ltd | 車載用交流発電機 |
JP2005252030A (ja) * | 2004-03-04 | 2005-09-15 | Hitachi Metals Ltd | 鉛フリー半田材料および半田材料の製造方法 |
JP2005252029A (ja) * | 2004-03-04 | 2005-09-15 | Renesas Technology Corp | 半導体装置およびその製造方法、電子装置ならびに実装構造体 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10312211B2 (en) | 2015-11-16 | 2019-06-04 | Toyota Jidosha Kabushiki Kaisha | Method of manufacturing semiconductor device |
US11195815B2 (en) | 2019-01-11 | 2021-12-07 | Denso Corporation | Semiconductor device and manufacturing method thereof with Cu and Sn intermetallic compound |
Also Published As
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US8421232B2 (en) | 2013-04-16 |
EP1760783B1 (en) | 2016-06-22 |
EP2234155A3 (en) | 2010-12-08 |
EP1760783A2 (en) | 2007-03-07 |
US20090159650A1 (en) | 2009-06-25 |
US7964492B2 (en) | 2011-06-21 |
CN101783304B (zh) | 2013-03-13 |
CN102324405B (zh) | 2014-10-15 |
JP2007067158A (ja) | 2007-03-15 |
US20070057021A1 (en) | 2007-03-15 |
EP2234155A2 (en) | 2010-09-29 |
CN102324405A (zh) | 2012-01-18 |
EP1760783A3 (en) | 2007-11-28 |
CN101123229A (zh) | 2008-02-13 |
US20110223718A1 (en) | 2011-09-15 |
CN101783304A (zh) | 2010-07-21 |
EP2234155B1 (en) | 2017-10-04 |
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