JP4338768B1 - 発光装置 - Google Patents
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- JP4338768B1 JP4338768B1 JP2009008916A JP2009008916A JP4338768B1 JP 4338768 B1 JP4338768 B1 JP 4338768B1 JP 2009008916 A JP2009008916 A JP 2009008916A JP 2009008916 A JP2009008916 A JP 2009008916A JP 4338768 B1 JP4338768 B1 JP 4338768B1
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2103/00—Elongate light sources, e.g. fluorescent tubes
- F21Y2103/10—Elongate light sources, e.g. fluorescent tubes comprising a linear array of point-like light-generating elements
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- General Engineering & Computer Science (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
- Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Abstract
【解決手段】発光装置1は、板状の放熱部材2と、放熱部材2に搭載され、基板31及び基板31上に形成される半導体積層体32を有し線状あるいは面状に発光する発光体3と、放熱部材2上の発光体3を覆う蛍光レンズ4と、蛍光レンズ4と発光体3との間に形成された発光体側真空断熱層5と、を備え、発光面積を拡大しつつ放熱性能を確保した。
【選択図】図1
Description
図6に示すように、発光装置101は、板状の放熱部材としての外部基板102と、外部基板102に搭載され線状に発光する発光体103と、外部基板2上の発光体103を覆う蛍光レンズ104と、蛍光レンズ104と発光体103の間に形成された発光体側真空断熱層105と、を備えている。また、発光装置101は、蛍光レンズ104の外側を覆い蛍光レンズ104を透過した光を拡散させる拡散レンズ114と、拡散レンズ114と蛍光レンズ104との間に形成されたレンズ側真空断熱層115と、を備えている。また、発光体103は、成長基板131と、成長基板131上にエピタキシャル成長により形成された半導体積層体132と、を有している。また、発光装置101は、外部基板102上に設けられ、発光体103から発せられる光を所定方向へ反射する反射板106を備えている。
図7に示すように、発光体103は、成長基板31上に半導体積層体32が形成された円板状の半導体ウェハ200をカットすることにより作成される。半導体ウェハ200の中央側には、長尺な発光体103がその幅方向に隣接して形成される。そして、半導体ウェハ200における各発光体103の外側には、点光源LEDに用いられる略正方形の発光体201が形成される。
そして、外部基板102の排出孔121を通じて空気を排出し、発光体側真空断熱層105及びレンズ側真空断熱層115を真空状態とした後、排出孔121を閉塞部材122により塞ぐ。
また、本実施形態の発光装置101によれば、蛍光レンズ104及び拡散レンズ114がガラスであるので、樹脂からなるものに比べて、耐熱性、耐候性等が向上する。
また、発光体103を紫外光を発するものとし、蛍光レンズ104に紫外光により励起される青色蛍光体、緑色蛍光体及び赤色蛍光体を含有させたものであってもよい。この場合、拡散レンズ114が紫外光を透過しないものとすることで、発光体103から紫外光が外部へ放出することを防止することができる。
2 外部基板
2a 第1電極
2b 第2電極
3 発光体
3a 第1ワイヤ
3b 第2ワイヤ
4 蛍光レンズ
4a 蛍光層
4b 拡散層
5 発光体側真空断熱層
6 反射板
7 封止樹脂
8 蛍光体
9 断熱材
16 リフレクタ部材
18 拡散材
31 成長基板
32 半導体積層体
33 n型半導体層
34 発光層
35 p型半導体層
36 n側電極
37 p側電極
101 発光装置
102 外部基板
102a 第1電極
102b 第2電極
103 発光体
103a 第1ワイヤ
103b 第2ワイヤ
104 蛍光レンズ
105 発光体側真空断熱層
106 反射板
107 封止樹脂
108 蛍光体
109 断熱材
115 レンズ側真空断熱層
116 リフレクタ部材
118 拡散材
121 連通孔
122 閉塞部材
131 成長基板
132 半導体積層体
133 n型半導体層
134 発光層
135 p型半導体層
136 n側電極
137 p側電極
Claims (6)
- 板状の放熱部材と、
前記放熱部材に搭載され、基板と、第1導電型の第1半導体層、発光層及び第2導電型の第2半導体層を含み所定方向へ延びる半導体積層体と、を有し、線状あるいは面状に発光する発光体と、
前記放熱部材上の前記発光体を覆い、前記発光体から発せられる光により励起されると当該光と異なる波長の光を発する蛍光レンズと、
前記蛍光レンズと前記発光体との間に形成された発光体側真空断熱層と、
前記蛍光レンズの外側を覆い、前記蛍光レンズを透過した光を拡散させる拡散レンズと、
前記拡散レンズと前記蛍光レンズとの間に形成されたレンズ側真空断熱層と、を備え、
前記放熱部材は、前記発光体の延在方向と同方向へ延びる発光装置。 - 前記拡散レンズは、外部からの紫外光の侵入を阻止する請求項1に記載の発光装置。
- 前記放熱部材の上面の外縁側に設けられた断熱材を備え、
前記拡散レンズは、前記断熱材を介して前記放熱部材に設けられている請求項1または2に記載の発光装置。 - 前記拡散レンズは、前記断熱材に溶着されている請求項3に記載の発光装置。
- 前記蛍光レンズは、前記断熱材を介して前記放熱部材に設けられている請求項4に記載の発光装置。
- 前記蛍光レンズ及び前記拡散レンズは、ガラスからなる請求項3から5のいずれか1項に記載の発光装置。
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009008916A JP4338768B1 (ja) | 2008-08-12 | 2009-01-19 | 発光装置 |
EP09806718A EP2315264A4 (en) | 2008-08-12 | 2009-08-11 | LIGHT EMITTING DEVICE |
AU2009280606A AU2009280606A1 (en) | 2008-08-12 | 2009-08-11 | Light-emitting device |
KR1020107027899A KR20110003586A (ko) | 2008-08-12 | 2009-08-11 | 발광 장치 |
PCT/JP2009/064189 WO2010018827A1 (ja) | 2008-08-12 | 2009-08-11 | 発光装置 |
RU2011109198/28A RU2011109198A (ru) | 2008-08-12 | 2009-08-11 | Светоизлучающее устройство |
US13/058,522 US20110149578A1 (en) | 2008-08-12 | 2009-08-11 | Light-emitting device |
CN2009801311823A CN102119451A (zh) | 2008-08-12 | 2009-08-11 | 发光装置 |
CA2734292A CA2734292C (en) | 2008-08-12 | 2009-08-11 | Light-emitting device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008229048 | 2008-08-12 | ||
JP2009008916A JP4338768B1 (ja) | 2008-08-12 | 2009-01-19 | 発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP4338768B1 true JP4338768B1 (ja) | 2009-10-07 |
JP2010067939A JP2010067939A (ja) | 2010-03-25 |
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Application Number | Title | Priority Date | Filing Date |
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JP2009008916A Expired - Fee Related JP4338768B1 (ja) | 2008-08-12 | 2009-01-19 | 発光装置 |
JP2009125428A Pending JP2010067948A (ja) | 2008-08-12 | 2009-05-25 | 発光装置 |
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Application Number | Title | Priority Date | Filing Date |
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JP2009125428A Pending JP2010067948A (ja) | 2008-08-12 | 2009-05-25 | 発光装置 |
Country Status (9)
Country | Link |
---|---|
US (1) | US20110149578A1 (ja) |
EP (1) | EP2315264A4 (ja) |
JP (2) | JP4338768B1 (ja) |
KR (1) | KR20110003586A (ja) |
CN (1) | CN102119451A (ja) |
AU (1) | AU2009280606A1 (ja) |
CA (1) | CA2734292C (ja) |
RU (1) | RU2011109198A (ja) |
WO (1) | WO2010018827A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010050501A1 (ja) * | 2008-10-29 | 2010-05-06 | パナソニック電工株式会社 | 半導体発光素子およびその製造方法、発光装置 |
JP2011192793A (ja) * | 2010-03-15 | 2011-09-29 | Heiji Niiyama | 発光装置 |
WO2013014732A1 (ja) * | 2011-07-24 | 2013-01-31 | Niiyama Heiji | 発光装置 |
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2009
- 2009-01-19 JP JP2009008916A patent/JP4338768B1/ja not_active Expired - Fee Related
- 2009-05-25 JP JP2009125428A patent/JP2010067948A/ja active Pending
- 2009-08-11 WO PCT/JP2009/064189 patent/WO2010018827A1/ja active Application Filing
- 2009-08-11 AU AU2009280606A patent/AU2009280606A1/en not_active Abandoned
- 2009-08-11 CN CN2009801311823A patent/CN102119451A/zh active Pending
- 2009-08-11 EP EP09806718A patent/EP2315264A4/en not_active Withdrawn
- 2009-08-11 CA CA2734292A patent/CA2734292C/en active Active
- 2009-08-11 RU RU2011109198/28A patent/RU2011109198A/ru not_active Application Discontinuation
- 2009-08-11 KR KR1020107027899A patent/KR20110003586A/ko not_active Application Discontinuation
- 2009-08-11 US US13/058,522 patent/US20110149578A1/en not_active Abandoned
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WO2010050501A1 (ja) * | 2008-10-29 | 2010-05-06 | パナソニック電工株式会社 | 半導体発光素子およびその製造方法、発光装置 |
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JP2011192793A (ja) * | 2010-03-15 | 2011-09-29 | Heiji Niiyama | 発光装置 |
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Also Published As
Publication number | Publication date |
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EP2315264A1 (en) | 2011-04-27 |
RU2011109198A (ru) | 2012-09-20 |
WO2010018827A1 (ja) | 2010-02-18 |
CN102119451A (zh) | 2011-07-06 |
AU2009280606A1 (en) | 2010-02-18 |
KR20110003586A (ko) | 2011-01-12 |
CA2734292A1 (en) | 2010-02-18 |
EP2315264A4 (en) | 2012-04-04 |
JP2010067948A (ja) | 2010-03-25 |
JP2010067939A (ja) | 2010-03-25 |
US20110149578A1 (en) | 2011-06-23 |
CA2734292C (en) | 2012-06-19 |
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