JP4303550B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP4303550B2 JP4303550B2 JP2003342705A JP2003342705A JP4303550B2 JP 4303550 B2 JP4303550 B2 JP 4303550B2 JP 2003342705 A JP2003342705 A JP 2003342705A JP 2003342705 A JP2003342705 A JP 2003342705A JP 4303550 B2 JP4303550 B2 JP 4303550B2
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- Prior art keywords
- light emitting
- led element
- sealing member
- emitting device
- buffer layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Led Device Packages (AREA)
- Led Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
(1)ガラス材による封止部材14で全体を封止したことにより、樹脂封止で問題になった黄変や着色による光の減衰を低減することができる。
(2)LED素子12の周囲に緩衝層13を設けたことにより、封止部材14の封止時に粘度の高いガラス材を介してLED素子12に付与される外力が緩和される。すなわち、緩衝層13の介在によってLED素子12と封止部材14とが直接接触しないので、熱膨張・熱収縮によって生じる応力を緩衝層13によって吸収できる。
(3)緩衝層13を介してLED素子12をガラス封止することによって、封止部材14のLED素子12近傍に生じていたクラックの発生を防止することが可能になる。このような緩衝層13を設ける構成は、封止部材14との接触面積が広くなるラージサイズ(1mm×1mm)のLED素子12において特に有効である。
(4)LED素子12を緩衝層13で包囲することによって、バンプの圧潰による電極間の短絡を防ぐことができる。また、緩衝層13がバンプ形状の崩れを抑制することから、ガラス封止によってLED素子12の光軸が傾くことを防げる。
(5)ウェハをスクライブすることによりLED素子12を形成する場合、スクライブされたLED素子12の側面には微細な凹凸が生じている。この凹凸はガラス封止型の発光装置10にとってLED素子12と封止部材14との界面に応力の不均衡部分を形成し、ひいてはマイクロクラックを発生させる要因となる。
このような問題に対しては、LED素子12のスクライブ面となる側面に緩衝層13が設けられているので、封止部材14の熱収縮時におけるマイクロクラックの発生を防げる。
(1)サブマウント52の下部に放熱を促す放熱部材51を設けたため、LED素子41の点灯に伴う発熱を効率良く外部へ放散でき、ガラス材による封止部材55等の温度上昇に伴う熱膨張・熱収縮の発生を抑制してクラックの発生を防止することができる。
(2)緩衝層54に蛍光体54aを混合させたことにより、波長変換が行えると共に光の取り出し効率の向上が可能になる。
11 基板部
11a セラミック基板
11b,11c,11d,11e,11f,11g 配線層
11h,11i,11j,11k Auメッキ膜
11l,11m スルーホール
12 LED素子
12a,12b 電極
13 緩衝層
14 封止部材
20 発光装置
21 緩衝層
30 発光装置
31 基板部
31a セラミック基板
31b,31c,31d,31e 配線層
31f,31g スルーホール
32 LED素子
33 緩衝層
34 封止部材
35a,35b ワイヤ(ボンディングワイヤ)
40 発光装置
41 LED素子
42 バンプ
43 サブマウント
43a,43b 電極
43c スルーホール
44a,44b リード部
45 緩衝層
46 封止部材
50 発光装置
51 放熱部材
52 サブマウント
52a,52b 配線パターン
53a,53b リード部
54 緩衝層
55 封止部材
200 発光装置
201,202 配線導体
203 カップ部
203A 底部
204 LED素子
205 ワイヤ
206 ガラス層
206A 蛍光物質
207 封止樹脂
Claims (3)
- 側面に凹凸が生じている発光素子と、
前記発光素子が上面に搭載され、前記発光素子に給電を行う配線層と、前記配線層が上面に形成されたセラミック基板と、を有する基板部と、
前記発光素子と前記基板部の前記配線層とを接続するワイヤと、
前記発光素子の全体及び前記ワイヤの全部分を覆う多孔質のセラミックからなる緩衝層と、
前記緩衝層の表面及び前記基板部の上面を覆うように形成され、前記発光素子を封止し前記発光素子と熱膨張率が異なる透光性のガラスからなり、前記発光素子の封止加工後に熱収縮による応力が生じている封止部材と、を備え、
前記緩衝層は、前記発光素子と前記封止部材との間に介在して熱収縮によって生じている前記封止部材の応力を吸収し、前記封止部材の封止時と封止加工後の温度変化により前記発光素子と前記封止部材の熱膨張率差に起因して生じる前記封止部材の前記発光素子の近傍におけるクラックの発生を防止することを特徴とする発光装置。 - 前記緩衝層は、SiO 2 であることを特徴とする請求項1に記載の発光装置。
- 前記緩衝層は、蛍光体が混入されていることを特徴とする請求項1または2に記載の発光装置。
Priority Applications (11)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003342705A JP4303550B2 (ja) | 2003-09-30 | 2003-09-30 | 発光装置 |
KR1020057016878A KR100693969B1 (ko) | 2003-03-10 | 2004-03-10 | 고체 소자 디바이스 및 그 제조 방법 |
US10/548,560 US7824937B2 (en) | 2003-03-10 | 2004-03-10 | Solid element device and method for manufacturing the same |
EP04719060.8A EP1603170B1 (en) | 2003-03-10 | 2004-03-10 | Method for manufacturing a solid-state optical element device |
PCT/JP2004/003089 WO2004082036A1 (ja) | 2003-03-10 | 2004-03-10 | 固体素子デバイスおよびその製造方法 |
CN2010101176741A CN101789482B (zh) | 2003-03-10 | 2004-03-10 | 固体元件装置及其制造方法 |
EP13156568.1A EP2596948B1 (en) | 2003-03-10 | 2004-03-10 | Method of making a semiconductor device |
CN2004800064031A CN1759492B (zh) | 2003-03-10 | 2004-03-10 | 固体元件装置的制造方法 |
TW093106393A TWI246780B (en) | 2003-03-10 | 2004-03-10 | Solid-state component device and manufacturing method thereof |
US12/923,788 US8154047B2 (en) | 2003-03-10 | 2010-10-07 | Solid element device and method for manufacturing the same |
US13/419,093 US8685766B2 (en) | 2003-03-10 | 2012-03-13 | Solid element device and method for manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003342705A JP4303550B2 (ja) | 2003-09-30 | 2003-09-30 | 発光装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2009064718A Division JP5126127B2 (ja) | 2009-03-17 | 2009-03-17 | 発光装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006054209A JP2006054209A (ja) | 2006-02-23 |
JP4303550B2 true JP4303550B2 (ja) | 2009-07-29 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2003342705A Expired - Fee Related JP4303550B2 (ja) | 2003-03-10 | 2003-09-30 | 発光装置 |
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JP (1) | JP4303550B2 (ja) |
Families Citing this family (41)
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US7915085B2 (en) | 2003-09-18 | 2011-03-29 | Cree, Inc. | Molded chip fabrication method |
JP4632426B2 (ja) * | 2004-03-31 | 2011-02-16 | シーアイ化成株式会社 | 発光ダイオード組立体の組立方法および発光ダイオード組立体 |
JP4632427B2 (ja) * | 2004-03-31 | 2011-02-16 | シーアイ化成株式会社 | 発光ダイオード組立体の組立方法および発光ダイオード組立体 |
US7217583B2 (en) | 2004-09-21 | 2007-05-15 | Cree, Inc. | Methods of coating semiconductor light emitting elements by evaporating solvent from a suspension |
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US8969908B2 (en) * | 2006-04-04 | 2015-03-03 | Cree, Inc. | Uniform emission LED package |
WO2007135754A1 (ja) | 2006-05-18 | 2007-11-29 | Asahi Glass Company, Limited | 発光装置の製造方法および発光装置 |
JP5555971B2 (ja) * | 2006-07-18 | 2014-07-23 | 日亜化学工業株式会社 | 線状発光装置およびそれを用いた面状発光装置 |
US7943952B2 (en) | 2006-07-31 | 2011-05-17 | Cree, Inc. | Method of uniform phosphor chip coating and LED package fabricated using method |
WO2008026699A1 (en) * | 2006-08-30 | 2008-03-06 | Kyocera Corporation | Light-emitting device |
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US9159888B2 (en) | 2007-01-22 | 2015-10-13 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
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US9401461B2 (en) | 2007-07-11 | 2016-07-26 | Cree, Inc. | LED chip design for white conversion |
KR20090015734A (ko) | 2007-08-09 | 2009-02-12 | 엘지이노텍 주식회사 | 광원 장치 |
JP5212777B2 (ja) * | 2007-11-28 | 2013-06-19 | スタンレー電気株式会社 | 半導体発光装置及び照明装置 |
US8167674B2 (en) | 2007-12-14 | 2012-05-01 | Cree, Inc. | Phosphor distribution in LED lamps using centrifugal force |
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US10008637B2 (en) | 2011-12-06 | 2018-06-26 | Cree, Inc. | Light emitter devices and methods with reduced dimensions and improved light output |
US8637883B2 (en) | 2008-03-19 | 2014-01-28 | Cree, Inc. | Low index spacer layer in LED devices |
US8877524B2 (en) | 2008-03-31 | 2014-11-04 | Cree, Inc. | Emission tuning methods and devices fabricated utilizing methods |
JP5528900B2 (ja) | 2010-04-30 | 2014-06-25 | ローム株式会社 | 発光素子モジュール |
JP5449039B2 (ja) * | 2010-06-07 | 2014-03-19 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
US10546846B2 (en) | 2010-07-23 | 2020-01-28 | Cree, Inc. | Light transmission control for masking appearance of solid state light sources |
JP5755420B2 (ja) * | 2010-09-01 | 2015-07-29 | 日亜化学工業株式会社 | 発光装置 |
JP5049382B2 (ja) | 2010-12-21 | 2012-10-17 | パナソニック株式会社 | 発光装置及びそれを用いた照明装置 |
US9166126B2 (en) | 2011-01-31 | 2015-10-20 | Cree, Inc. | Conformally coated light emitting devices and methods for providing the same |
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US8558252B2 (en) | 2011-08-26 | 2013-10-15 | Cree, Inc. | White LEDs with emission wavelength correction |
US9496466B2 (en) | 2011-12-06 | 2016-11-15 | Cree, Inc. | Light emitter devices and methods, utilizing light emitting diodes (LEDs), for improved light extraction |
JP5978631B2 (ja) * | 2012-01-26 | 2016-08-24 | 日亜化学工業株式会社 | 発光装置 |
US9343441B2 (en) | 2012-02-13 | 2016-05-17 | Cree, Inc. | Light emitter devices having improved light output and related methods |
US9240530B2 (en) | 2012-02-13 | 2016-01-19 | Cree, Inc. | Light emitter devices having improved chemical and physical resistance and related methods |
JP5819469B2 (ja) * | 2014-04-16 | 2015-11-24 | ローム株式会社 | 発光素子モジュール |
WO2018184572A1 (zh) | 2017-04-07 | 2018-10-11 | 宁波舜宇光电信息有限公司 | 基于模制工艺的半导体封装方法和半导体装置 |
CN207664026U (zh) * | 2017-04-07 | 2018-07-27 | 宁波舜宇光电信息有限公司 | 基于模制工艺的半导体装置及包含该半导体装置的图像处理组件、摄像装置和电子设备 |
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2003
- 2003-09-30 JP JP2003342705A patent/JP4303550B2/ja not_active Expired - Fee Related
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