JP4210753B2 - Metal complex dendrimer and its use - Google Patents
Metal complex dendrimer and its use Download PDFInfo
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- JP4210753B2 JP4210753B2 JP2003319749A JP2003319749A JP4210753B2 JP 4210753 B2 JP4210753 B2 JP 4210753B2 JP 2003319749 A JP2003319749 A JP 2003319749A JP 2003319749 A JP2003319749 A JP 2003319749A JP 4210753 B2 JP4210753 B2 JP 4210753B2
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- 239000000412 dendrimer Substances 0.000 title claims description 16
- 229920000736 dendritic polymer Polymers 0.000 title claims description 16
- 150000004696 coordination complex Chemical class 0.000 title claims description 8
- 239000010409 thin film Substances 0.000 claims description 15
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 125000000217 alkyl group Chemical group 0.000 claims description 7
- 125000004432 carbon atom Chemical group C* 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 125000005843 halogen group Chemical group 0.000 claims description 6
- 229910052736 halogen Inorganic materials 0.000 claims description 5
- 229910052790 beryllium Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 238000000034 method Methods 0.000 description 15
- 150000001875 compounds Chemical class 0.000 description 10
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 10
- 239000010410 layer Substances 0.000 description 9
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 8
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000008018 melting Effects 0.000 description 7
- 238000002844 melting Methods 0.000 description 7
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 239000002904 solvent Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000009477 glass transition Effects 0.000 description 3
- 239000012046 mixed solvent Substances 0.000 description 3
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 150000004984 aromatic diamines Chemical class 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- KJIFKLIQANRMOU-UHFFFAOYSA-N oxidanium;4-methylbenzenesulfonate Chemical compound O.CC1=CC=C(S(O)(=O)=O)C=C1 KJIFKLIQANRMOU-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XPNGNIFUDRPBFJ-UHFFFAOYSA-N (2-methylphenyl)methanol Chemical compound CC1=CC=CC=C1CO XPNGNIFUDRPBFJ-UHFFFAOYSA-N 0.000 description 1
- RSEDJGQHEVYWOD-UHFFFAOYSA-N (5-chloro-7-iodoquinolin-8-yl) acetate Chemical compound C1=CN=C2C(OC(=O)C)=C(I)C=C(Cl)C2=C1 RSEDJGQHEVYWOD-UHFFFAOYSA-N 0.000 description 1
- JJIQKIUIIVFHAN-UHFFFAOYSA-N 9-(4-ethynylphenyl)carbazole Chemical compound C1=CC(C#C)=CC=C1N1C2=CC=CC=C2C2=CC=CC=C21 JJIQKIUIIVFHAN-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N EtOH Substances CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- GTEMIOZMYHWLSN-UHFFFAOYSA-N IC1=CC=C2C=CC=NC2=C1OC(C)=O Chemical class IC1=CC=C2C=CC=NC2=C1OC(C)=O GTEMIOZMYHWLSN-UHFFFAOYSA-N 0.000 description 1
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 1
- ZMANZCXQSJIPKH-UHFFFAOYSA-N N,N-Diethylethanamine Substances CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- SMZOGRDCAXLAAR-UHFFFAOYSA-N aluminium isopropoxide Chemical compound [Al+3].CC(C)[O-].CC(C)[O-].CC(C)[O-] SMZOGRDCAXLAAR-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- YNHIGQDRGKUECZ-UHFFFAOYSA-L bis(triphenylphosphine)palladium(ii) dichloride Chemical compound [Cl-].[Cl-].[Pd+2].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 YNHIGQDRGKUECZ-UHFFFAOYSA-L 0.000 description 1
- 150000001716 carbazoles Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- WORJEOGGNQDSOE-UHFFFAOYSA-N chloroform;methanol Chemical compound OC.ClC(Cl)Cl WORJEOGGNQDSOE-UHFFFAOYSA-N 0.000 description 1
- 238000004440 column chromatography Methods 0.000 description 1
- GBRBMTNGQBKBQE-UHFFFAOYSA-L copper;diiodide Chemical compound I[Cu]I GBRBMTNGQBKBQE-UHFFFAOYSA-L 0.000 description 1
- 239000012043 crude product Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- WGLUMOCWFMKWIL-UHFFFAOYSA-N dichloromethane;methanol Chemical compound OC.ClCCl WGLUMOCWFMKWIL-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000002330 electrospray ionisation mass spectrometry Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000003541 multi-stage reaction Methods 0.000 description 1
- PUPKPAZSFZOLOR-UHFFFAOYSA-N n,n-dimethylformamide;toluene Chemical compound CN(C)C=O.CC1=CC=CC=C1 PUPKPAZSFZOLOR-UHFFFAOYSA-N 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 238000010898 silica gel chromatography Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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Description
本発明は、薄膜デバイスを作成するのに適した金属錯体デンドリマー及びその用途に関する。 The present invention relates to a metal complex dendrimer suitable for making a thin film device and use thereof.
トリス(8-キノリノレート)アルミニウム（Alq3）ならびに類縁化合物は、多層型有機ELデバイスにおいて、極めて有用とされる分子であるが、その溶解性の低さ、ならびに結晶性のため、薄膜形成等のデバイス用の加工が困難な分子である。したがって良好な薄膜デバイス作製のために、真空蒸着法などのドライプロセスを用いなければならず、製造コスト低減や効率化をはかるうえで問題が多い。
また、ITOガラス上に、芳香族ジアミンの第１層（ホール移動層）、Alq3の第２層（発光層）を形成し、Mg/Ag電極で挟みこんだ、二層系ＥＬデバイスが報告されている。二層の有機薄膜のモルホロジーがデバイス性能を左右し、両層ともにスムースで連続的でなければならないが、芳香族ジアミン層がアモルファス性である一方で、Alq3層は５００Åの平均サイズを持った微結晶からなっていることが知られている。（非特許文献１参照）
In addition, a two-layer EL device was reported in which a first layer (hole transfer layer) of aromatic diamine and a second layer (light emitting layer) of Alq3 were formed on ITO glass and sandwiched between Mg / Ag electrodes. ing. The morphology of the two-layer organic thin film affects the device performance, and both layers must be smooth and continuous, while the aromatic diamine layer is amorphous, while the Alq3 layer has a fine size with an average size of 500 mm. It is known to consist of crystals. (See Non-Patent Document 1)
分子を用いる薄膜デバイスの作製には、真空蒸着などの乾式法と、スピンコートなどによる湿式法とがある。真空蒸着法は作製した蒸着膜の純度や均一性の点で良好であるが、効率性が低く、時間やコストなどに難点がある。一方、スピンコート法は、簡便で、安価、短時間で大面積の薄膜材料が作製できるなどの特長があり、経済性が高い。
薄膜デバイスとして急速に成長しているELに用いられるAlq3ならびに類縁化合物群は、概して溶解性が低いため、湿式法による薄膜形成が困難で、真空蒸着法により製造されてきた。本発明は、これら従来、難溶性とされるAlq３など、デバイス機能を担う分子を、易溶性ならびにアモルファス性としたもので、湿式法による分子デバイス形成を可能にする分子材料を提供するものである。
本発明は、有機溶剤に溶解しやすい金属錯体デンドリマー及びその用途を開発する。
There are two methods for manufacturing a thin film device using molecules: a dry method such as vacuum deposition and a wet method such as spin coating. The vacuum vapor deposition method is good in terms of the purity and uniformity of the produced vapor deposition film, but has low efficiency and has problems in time and cost. On the other hand, the spin coating method has features such as being simple, inexpensive, and capable of producing a thin film material having a large area in a short time, and is highly economical.
Alq3 and related compounds used in EL, which is rapidly growing as a thin film device, generally have low solubility, so that it is difficult to form a thin film by a wet method and has been manufactured by a vacuum deposition method. The present invention provides a molecular material that enables molecular devices to be formed by a wet process, in which molecules having a device function, such as Alq3, which has been conventionally poorly soluble, are easily soluble and amorphous. .
This invention develops the metal complex dendrimer which is easy to melt | dissolve in an organic solvent, and its use.
本発明は、有機溶剤に溶解しやすい金属錯体デンドリマーである一般式
で示される金属錯体デンドリマー及びこれを用いた薄膜デバイスであり、これが上記課題を達成することが出来ることを見出した。
The present invention is a general formula that is a metal complex dendrimer that is easily dissolved in an organic solvent.
It was found that the metal complex dendrimer shown in the above and a thin film device using the same can achieve the above-mentioned problems.
本発明においては、易溶性の官能基を機能分子周囲に導入することにより、湿式法による良好な薄膜形成が可能な、易溶性かつ非晶質な分子性材料が得られ、また、混合や積層化により得られる性質がこれらをあらかじめ複合化した分子とすることで効率的に発現する。
本発明のデンドリマーをあらかじめデバイス機能の一端を担う分子を含有させた薄膜デバイスは、多層薄膜化を要しない単層薄膜用の分子材料を可能にした。
In the present invention, by introducing an easily soluble functional group around the functional molecule, an easily soluble and amorphous molecular material capable of forming a good thin film by a wet method is obtained. The properties obtained by the conversion can be expressed efficiently by making these molecules complexed in advance.
The thin film device in which the dendrimer of the present invention contains a molecule that plays a part in the device function in advance enables a molecular material for a single layer thin film that does not require a multilayer thin film.
本発明の錯体は、デンドロン化合物と金属原子を反応させて作成することが出来る。錯塩の作成方法は周知の方法であり、本発明ではどの方法を利用してもよい。
本発明の錯体において用いる金属原子は、Ａｌ，Ｚｎ，Ｂｅ，Ｇｅ，Ｇｅ，Ｍｇから選ばれる金属であるが、とくに、Ａｌが好ましい。
本発明で用いるデンドロン化合物は、次のようにして多段階反応により合成した。すなわち、
一般式
化合物（Ｎ−エチニルフェニルカルバゾール類）と、一般式
を反応させて、一般式
デンドロン化合物を得て、さらに当該化合物を加水分解することにより、一般式
The complex of the present invention can be prepared by reacting a dendron compound with a metal atom. The method for preparing the complex salt is a well-known method, and any method may be used in the present invention.
The metal atom used in the complex of the present invention is a metal selected from Al, Zn, Be, Ge, Ge, and Mg, and Al is particularly preferable.
The dendron compound used in the present invention was synthesized by a multistage reaction as follows. That is,
General formula
To give the general formula
製造例
（デンドロン化合物の製造）
（8-アセトキシ-7-[4-(9’-カルバゾリル)フェニルエチニル]-5-クロロキノリンの製造）
9-(4-エチニルフェニル)カルバゾール(3.059 g, 11.443 mmol)、8-アセトキシ-5-クロロ-7-ヨードキノリン(3.911 g, 11.222 mmol)、ジクロロビス(トリフェニルホスフィン)パラジウム(0.183 g, 0.261 mmol)及びヨウ化銅(0.094 g, 0.494 mmol)の混合物をテトラヒドロフラン(40 ml)-トリエチルアミン(10 ml)の混合溶媒中、窒素下室温で一晩撹拌した。その溶液をろ過、溶媒を留去して得られた粗製物を、シリカゲルカラムクロマトグラフィーにて、まずクロロホルム、続いてクロロホルム-メタノール(9: 1 v/v)を流出溶媒として展開、主生成物を分離した。ジクロロメタン-メタノールより再結晶し、粉末を得た（収率71.3%）。
1H NMR (400 MHz, CDCl3, TMS): δ (ppm) 2.62 (s, 3H, CH3), 7.32 (t, J 7.2 Hz, 2H, arom. H), 7.42-7.48 (m, 4H, arom. H), 7.565 (dd, J 8.55 and 4.2 Hz, 1H, quinoline H), 7.63 (d, J 8.4 Hz, 2H, arom. H), 7.79 (d, J 8.4 Hz, 2H, arom. H), 7.82 (s, 1H, quinoline H), 8.16 (d, J 7.7 Hz, 2H, arom. H), 8.565 (dd, J 8.6 and 1.5 Hz, 1H, quinoline H), 9.01 (dd, J 4.2 and 1.5 Hz, 1H, quinoline H); ESI-MS : m/z 509.1 [M+Na]+, 997.4 [2M+Na]+.
Production example (Dendron compound production)
(Production of 8-acetoxy-7- [4- (9'-carbazolyl) phenylethynyl] -5-chloroquinoline)
9- (4-ethynylphenyl) carbazole (3.059 g, 11.443 mmol), 8-acetoxy-5-chloro-7-iodoquinoline (3.911 g, 11.222 mmol), dichlorobis (triphenylphosphine) palladium (0.183 g, 0.261 mmol) ) And copper iodide (0.094 g, 0.494 mmol) were stirred in a mixed solvent of tetrahydrofuran (40 ml) -triethylamine (10 ml) at room temperature overnight under nitrogen. The crude product obtained by filtering the solution and distilling off the solvent was developed using silica gel column chromatography, first with chloroform and then with chloroform-methanol (9: 1 v / v) as the effluent solvent. Separated. Recrystallization from dichloromethane-methanol gave a powder (yield 71.3%).
1 H NMR (400 MHz, CDCl 3 , TMS): δ (ppm) 2.62 (s, 3H, CH 3 ), 7.32 (t, J 7.2 Hz, 2H, arom.H), 7.42-7.48 (m, 4H, arom.H), 7.565 (dd, J 8.55 and 4.2 Hz, 1H, quinoline H), 7.63 (d, J 8.4 Hz, 2H, arom.H), 7.79 (d, J 8.4 Hz, 2H, arom.H) , 7.82 (s, 1H, quinoline H), 8.16 (d, J 7.7 Hz, 2H, arom.H), 8.565 (dd, J 8.6 and 1.5 Hz, 1H, quinoline H), 9.01 (dd, J 4.2 and 1.5 Hz, 1H, quinoline H); ESI-MS: m / z 509.1 [M + Na] + , 997.4 [2M + Na] + .
（7-[4-(9’-カルバゾリル)フェニルエチニル]-5-クロロ-8-キノリノール ）の製造)
上記8-アセトキシ-7-[4-(9’-カルバゾリル)フェニルエチニル]-5-クロロキノリン(1.510 g, 3.101 mmol)を、テトラヒドロフラン(60 ml)-エタノール(15 ml)混合溶媒に溶解し、水酸化ナトリウム(0.221 g, 5.525 mmol)水溶液5 mlを加え室温で一晩撹拌した。150 mlの水を加えた後、p-トルエンスルホン酸一水和物を用いて中和して得られた沈殿を、ろ集、乾燥することにより目的物を得た（収率100%）
1H NMR (400 MHz, DMSO-d6): δ (ppm) 7.33-7.37 (m, 2H, arom. H), 7.48-7.57 (m, 6H, arom. H), 7.67 (d, J 8.5 Hz, 2H, arom. H), 7.75 (d, J 8.5 Hz, 2H, arom. H), 8.27-8.31 (m, 3H, arom. H), 8.66 (s, 1H, arom. H).
(Production of 7- [4- (9'-carbazolyl) phenylethynyl] -5-chloro-8-quinolinol)
The 8-acetoxy-7- [4- (9′-carbazolyl) phenylethynyl] -5-chloroquinoline (1.510 g, 3.101 mmol) was dissolved in a tetrahydrofuran (60 ml) -ethanol (15 ml) mixed solvent, 5 ml of an aqueous solution of sodium hydroxide (0.221 g, 5.525 mmol) was added and stirred overnight at room temperature. After adding 150 ml of water, the precipitate obtained by neutralization with p-toluenesulfonic acid monohydrate was collected by filtration and dried to obtain the desired product (yield 100%)
1 H NMR (400 MHz, DMSO-d 6 ): δ (ppm) 7.33-7.37 (m, 2H, arom.H), 7.48-7.57 (m, 6H, arom.H), 7.67 (d, J 8.5 Hz , 2H, arom.H), 7.75 (d, J 8.5 Hz, 2H, arom.H), 8.27-8.31 (m, 3H, arom.H), 8.66 (s, 1H, arom.H).
実施例１
（金属錯体デンドリマーの製造）
アルミニウム錯体を次のようにして作成した。
一般式
デンドロン化合物(3.3 eq.)及びアルミニウムトリイソプロポキシド(1 eq.)の混合物を、トルエン-ジメチルホルムアミド(5:1 v/v)の混合溶媒中、数時間加熱還流した後に室温まで冷却する。溶媒を留去して得られた残差をクロロホルム(100 ml)-水(200 ml)から抽出する。有機層を水(200 ml)で洗浄し、無水硫酸マグネシウムで乾燥、ろ過し、溶媒を留去する。得られた残差をシリカゲルによるカラムクロマトグラフィーでクロロホルムを流出溶媒として精製し、最後にトルエン-メタノールで再結晶する事により、下記の目的のデンドリマー類をそれぞれ71.3%の収率で得た。
(Production of metal complex dendrimers)
An aluminum complex was prepared as follows.
General formula
A mixture of the dendron compound (3.3 eq.) And aluminum triisopropoxide (1 eq.) Is heated to reflux in a mixed solvent of toluene-dimethylformamide (5: 1 v / v) for several hours and then cooled to room temperature. The residue obtained by distilling off the solvent is extracted from chloroform (100 ml) -water (200 ml). The organic layer is washed with water (200 ml), dried over anhydrous magnesium sulfate and filtered, and the solvent is distilled off. The obtained residue was purified by column chromatography on silica gel using chloroform as an effluent solvent, and finally recrystallized from toluene-methanol to obtain the following target dendrimers in a yield of 71.3%.
溶解性について調べたところ、クロロホルム、ジクロロメタン、テトラヒドロフラン、ジメチルホルムアミド等に易溶性であった。
さらに、熱的安定性及びアモルファス性についても調べた。図１及び図２にその特性を示す。:
DSC測定により行った。方法は合成したデンドリマーの粉末を一度融点以上に加熱して融解させた後、二度目の測定を行った。従って、融点は一度目の測定、ガラス転移温度は二度目の測定により得られたデータになる。このデンドリマーは192.3℃に融点を、また104.3℃にガラス転移温度が観測された。またデンドリマーの一度融解させて得られたガラス状態のサンプルは、二度目の測定において融点は観測されなかった。ガラス転移温度が得られた事、また二度目の測定で融点が観測されなかった事から、このデンドリマーはアモルファス性を示す事が分かった。
When the solubility was examined, it was readily soluble in chloroform, dichloromethane, tetrahydrofuran, dimethylformamide and the like.
In addition, thermal stability and amorphous properties were also investigated. The characteristics are shown in FIGS. :
This was done by DSC measurement. In the method, the synthesized dendrimer powder was once heated to the melting point or higher and melted, and then the second measurement was performed. Accordingly, the melting point is data obtained by the first measurement, and the glass transition temperature is obtained by the second measurement. This dendrimer had a melting point of 192.3 ° C and a glass transition temperature of 104.3 ° C. In addition, the glassy sample obtained by once melting the dendrimer had no melting point observed in the second measurement. Since the glass transition temperature was obtained and the melting point was not observed in the second measurement, it was found that this dendrimer was amorphous.
従来のトリス(8-キノリノレート)アルミニウム（Alq3）ならびに類縁化合物が用いられている多層型有機ELデバイスの分野において、トリス(8-キノリノレート)アルミニウム（Alq3）に置き換わることが出来る上、これよりも安く大量に薄膜形成デバイスを作り出すことが出来る。
In the field of multilayer organic EL devices where conventional tris (8-quinolinolate) aluminum (Alq3) and related compounds are used, it can be replaced with tris (8-quinolinolate) aluminum (Alq3) and cheaper than this. A large number of thin film forming devices can be created.
Claims (2)
で示される金属錯体デンドリマー。 General formula
A metal complex dendrimer represented by
で示される金属錯体デンドリマーを用いた薄膜デバイス。
A thin film device using a metal complex dendrimer represented by
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