JP4299827B2 - 誘電体磁器組成物、電子部品および積層セラミックコンデンサ - Google Patents
誘電体磁器組成物、電子部品および積層セラミックコンデンサ Download PDFInfo
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- JP4299827B2 JP4299827B2 JP2005351288A JP2005351288A JP4299827B2 JP 4299827 B2 JP4299827 B2 JP 4299827B2 JP 2005351288 A JP2005351288 A JP 2005351288A JP 2005351288 A JP2005351288 A JP 2005351288A JP 4299827 B2 JP4299827 B2 JP 4299827B2
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Description
誘電体粒子と、これら誘電体粒子の間に存在する粒界相とを有する誘電体磁器組成物であって、
前記誘電体磁器組成物が、チタン酸バリウムからなる主成分と、
MgO,CaO,BaOおよびSrOから選ばれる少なくとも1種からなる第1副成分と、
Siおよび/またはA元素(ただし、Aは、Al、GaおよびGeから選ばれる少なくとも1種)の酸化物から選ばれる少なくとも1種からなる第2副成分と、
V 2 O 5 ,MoO 3 およびWO 3 から選ばれる少なくとも1種からなる第3副成分と、
R1の酸化物(ただし、R1はSc,Er,Tm,YbおよびLuから選択される少なくとも1種)からなる第4副成分と、
R2の酸化物(ただし、R2はY、Dy、Ho、Tb、GdおよびEuから選択される少なくとも1種)からなる第5副成分と、
CaZrO 3 からなる第6副成分と、
MnOからなる第7副成分とを有し、
前記主成分100モルに対する上記各副成分の比率が、
第1副成分:0.1〜3モル、
第2副成分:2〜10モル、
第3副成分:0.01〜0.5モル、
第4副成分:0.5〜7モル、
第5副成分:0.5〜9モル、
第6副成分:0.5〜3モル、
第7副成分:0.01〜0.5モルであり、
前記粒界相に含まれるSiおよび/またはA元素(ただし、Aは、Al、GaおよびGeから選ばれる少なくとも1種)の濃度を測定した場合に、Siおよび/またはA元素の濃度が粒界相内の位置によってばらついており、
粒界相内のSiおよび/またはA元素の濃度のばらつきが、CV値で、10%よりも大きく、58%未満であり、より好ましくは、20〜50%である。
図1は、本発明の一実施形態に係る積層セラミックコンデンサの断面概略図である。
図2は、図1に示す誘電体層を構成する誘電体粒子の断面図である。
図3は、実施例において、CV値の算出方法を説明する模式図である。
誘電体層
MgO,CaO,BaOおよびSrOから選ばれる少なくとも1種からなる第1副成分と、
Siおよび/またはA元素(ただし、Aは、Al、GaおよびGeから選ばれる少なくとも1種)の酸化物から選ばれる少なくとも1種からなる第2副成分と、
V2 O5 ,MoO3 およびWO3 から選ばれる少なくとも1種からなる第3副成分と、
R1の酸化物(ただし、R1はSc,Er,Tm,YbおよびLuから選択される少なくとも1種)からなる第4副成分と、
R2の酸化物(ただし、R2はY、Dy、Ho、Tb、GdおよびEuから選択される少なくとも1種)からなる第5副成分と、
CaZrO3 からなる第6副成分と、
MnOからなる第7副成分とを有する。
主成分であるBaTiO3 に対する上記各副成分の比率は、BaTiO3 100モルに対し、
第1副成分:0.1〜3モル、
第2副成分:2〜10モル、
第3副成分:0.01〜0.5モル、
第4副成分:0.5〜7モル、
第5副成分:0<第5副成分≦9モル、
第6副成分:5モル以下、
第7副成分:0.5モル以下であり、
好ましくは、
第1副成分:0.1〜2.5モル、
第2副成分:3〜8モル、
第3副成分:0.1〜0.4モル、
第4副成分:0.5〜5.0モル、
第5副成分:0.5〜9モル、
第6副成分:0.5〜3モル、
第7副成分:0.01〜0.5モルである。
誘電体粒子の構造
内部電極層
端子電極
積層セラミックコンデンサの製造方法
実施例1
昇温速度:200°C/時間
保持温度:700°C
保持時間:2時間
雰囲気:空気中
で行い、
条件2では、
昇温速度:200°C/時間
保持温度:800°C
保持時間:2時間
雰囲気:空気中
で行った。
昇温速度:60°C/時間、
保持温度:260°C、
保持時間:8時間、
雰囲気:空気中、
で行った。
昇温速度:200°C/時間、
保持温度:1240°C、
保持時間:6時間、
酸素分圧:10−11気圧、
雰囲気:H2−N2−H2Oガス、
で行った。
昇温速度:200°C/時間、
保持温度:1000°C、
保持時間:2時間、
酸素分圧:10−7気圧、
雰囲気:加湿したN2 ガス、
で行った。
CV値
特性評価
実施例2
実施例3
実施例4
4… コンデンサ素体
4a… 第1端部
4b… 第2端部
6,8… 端子電極
10… 誘電体層
12… 内部電極層
20… 誘電体粒子
22… 粒界相
Claims (5)
- 誘電体粒子と、これら誘電体粒子の間に存在する粒界相とを有する誘電体磁器組成物であって、
前記誘電体磁器組成物が、チタン酸バリウムからなる主成分と、
MgO,CaO,BaOおよびSrOから選ばれる少なくとも1種からなる第1副成分と、
Siおよび/またはA元素(ただし、Aは、Al、GaおよびGeから選ばれる少なくとも1種)の酸化物から選ばれる少なくとも1種からなる第2副成分と、
V2 O5 ,MoO3 およびWO3 から選ばれる少なくとも1種からなる第3副成分と、
R1の酸化物(ただし、R1はSc,Er,Tm,YbおよびLuから選択される少なくとも1種)からなる第4副成分と、
R2の酸化物(ただし、R2はY、Dy、Ho、Tb、GdおよびEuから選択される少なくとも1種)からなる第5副成分と、
CaZrO3 からなる第6副成分と、
MnOからなる第7副成分とを有し、
前記主成分100モルに対する上記各副成分の比率が、
第1副成分:0.1〜3モル、
第2副成分:2〜10モル、
第3副成分:0.01〜0.5モル、
第4副成分:0.5〜7モル、
第5副成分:0.5〜9モル、
第6副成分:0.5〜3モル、
第7副成分:0.01〜0.5モルであり、
前記粒界相に含まれるSiおよび/またはA元素(ただし、Aは、Al、GaおよびGeから選ばれる少なくとも1種)の濃度を測定した場合に、前記Siおよび/またはA元素の濃度が粒界相内の位置によってばらついており、
粒界相内の前記Siおよび/またはA元素の濃度のばらつきが、CV値で、10%よりも大きく、58%未満であることを特徴とする誘電体磁器組成物。 - 前記誘電体磁器組成物を構成する誘電体粒子の平均粒径をD50とした場合に、平均粒径D50の値を示す誘電体粒子の周囲に存在する粒界相において前記Siおよび/またはA元素の濃度のばらつきが、CV値で、10%よりも大きく、58%未満である請求項1に記載の誘電体磁器組成物。
- 請求項1または2に記載の誘電体磁器組成物で構成してある誘電体層を有する電子部品。
- 請求項1または2に記載の誘電体磁器組成物で構成してある誘電体層と、内部電極層とが、交互に積層されたコンデンサ素体を有する積層セラミックコンデンサ。
- 誘電体粒子と、これら誘電体粒子の間に存在する粒界相とを有し、
チタン酸バリウムからなる主成分と、
MgO,CaO,BaOおよびSrOから選ばれる少なくとも1種からなる第1副成分と、
Siおよび/またはA元素(ただし、Aは、Al、GaおよびGeから選ばれる少なくとも1種)の酸化物から選ばれる少なくとも1種からなる第2副成分と、
V 2 O 5 ,MoO 3 およびWO 3 から選ばれる少なくとも1種からなる第3副成分と、
R1の酸化物(ただし、R1はSc,Er,Tm,YbおよびLuから選択される少なくとも1種)からなる第4副成分と、
R2の酸化物(ただし、R2はY、Dy、Ho、Tb、GdおよびEuから選択される少なくとも1種)からなる第5副成分と、
CaZrO 3 からなる第6副成分と、
MnOからなる第7副成分と、を有し、
前記主成分100モルに対する上記各副成分の比率が、
第1副成分:0.1〜3モル、
第2副成分:2〜10モル、
第3副成分:0.01〜0.5モル、
第4副成分:0.5〜7モル、
第5副成分:0.5〜9モル、
第6副成分:0.5〜3モル、
第7副成分:0.01〜0.5モルである誘電体磁器組成物を製造する方法であって、
前記主成分の原料と、前記第1〜7副成分の原料と、を準備する工程と、
前記主成分の原料および第1〜7副成分の原料を全て混合して、少なくとも2つに分割する工程と、
分割された前記主成分の原料および第1〜7副成分の原料を、それぞれ異なる仮焼条件で仮焼する工程と、
仮焼された前記主成分の原料および第1〜7副成分の原料を混合して、誘電体原料を得る工程と、
前記誘電体原料を焼成して、誘電体磁器組成物を得る工程と、を有し、
前記誘電体磁器組成物において、前記粒界相に含まれるSiおよび/またはA元素(ただし、Aは、Al、GaおよびGeから選ばれる少なくとも1種)の濃度を測定した場合に、前記Siおよび/またはA元素の濃度が粒界相内の位置によってばらついており、
粒界相内の前記Siおよび/またはA元素の濃度のばらつきが、CV値で、10%よりも大きく、58%未満であることを特徴とする誘電体磁器組成物の製造方法。
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JP2003176171A (ja) * | 2001-10-04 | 2003-06-24 | Ube Electronics Ltd | 誘電体磁器組成物 |
US6828266B1 (en) * | 2003-05-16 | 2004-12-07 | Ferro Corporation | X7R dielectric composition |
CN100509696C (zh) * | 2003-08-14 | 2009-07-08 | 罗姆股份有限公司 | 电介质瓷器组合物、积层型陶瓷电容器和电子部件 |
JP4407299B2 (ja) * | 2004-01-30 | 2010-02-03 | Tdk株式会社 | 積層セラミックコンデンサ |
JP4073416B2 (ja) * | 2004-03-31 | 2008-04-09 | Tdk株式会社 | 積層セラミックコンデンサ |
JP4203452B2 (ja) * | 2004-06-28 | 2009-01-07 | Tdk株式会社 | 積層型セラミックコンデンサの製造方法 |
JP4095586B2 (ja) * | 2004-06-29 | 2008-06-04 | Tdk株式会社 | 積層型セラミックコンデンサおよびその製造方法 |
TWI275582B (en) * | 2004-08-30 | 2007-03-11 | Tdk Corp | Dielectric ceramic composition and electronic device |
JP4483659B2 (ja) * | 2005-04-04 | 2010-06-16 | Tdk株式会社 | 電子部品、誘電体磁器組成物およびその製造方法 |
-
2005
- 2005-12-05 JP JP2005351288A patent/JP4299827B2/ja active Active
-
2006
- 2006-12-01 US US11/606,936 patent/US20070142209A1/en not_active Abandoned
- 2006-12-04 EP EP06125316A patent/EP1792881A1/en not_active Withdrawn
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EP1792881A1 (en) | 2007-06-06 |
JP2007153673A (ja) | 2007-06-21 |
US20070142209A1 (en) | 2007-06-21 |
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