JP4137461B2 - Method for manufacturing semiconductor device - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor device formed using a semiconductor film having a crystal structure and a manufacturing method thereof, and particularly includes a field effect transistor in which a channel formation region is formed using a crystalline semiconductor film formed over an insulating surface. The present invention relates to a semiconductor device.
[0002]
[Prior art]
A technique for forming an amorphous silicon film on an insulating substrate made of glass or the like and crystallizing the film to form a semiconductor element such as a transistor has been developed. In particular, a technique for crystallizing an amorphous silicon film by irradiating a laser beam is applied to a manufacturing technique of a thin film transistor (TFT). A transistor manufactured using a semiconductor film having a crystal structure (crystalline semiconductor film) is applied to a flat display device (flat panel display) typified by a liquid crystal display device.
[0003]
Applications of laser light in semiconductor manufacturing processes include technologies for recrystallizing damaged layers and amorphous layers formed on semiconductor substrates or semiconductor films, and technologies for crystallizing amorphous semiconductor films formed on insulating surfaces. Has been deployed. As a laser oscillation device to be applied, a gas laser typified by an excimer laser or a solid-state laser typified by a YAG laser is usually used.
[0004]
An example of crystallization of an amorphous semiconductor film by laser light irradiation is disclosed in Japanese Patent Application Laid-Open No. Sho 62-104117, where the scanning speed of the laser light is set to a beam spot diameter × 5000 / second or higher. In this case, the amorphous semiconductor film is polycrystallized without reaching a complete molten state. US Pat. No. 4,330,363 discloses that the semiconductor film formed in an island shape is irradiated with a stretched laser beam. Discloses a technique for forming a single crystal region. Alternatively, a method of processing and irradiating a beam in a linear shape with an optical system is known, as in a laser processing apparatus disclosed in Japanese Patent Application Laid-Open No. 8-195357.
[0005]
Furthermore, as disclosed in Japanese Patent Application Laid-Open No. 2001-144027, Nd: YVO _Four Using a solid-state laser oscillation device such as a laser, the amorphous semiconductor film is irradiated with laser light, which is the second harmonic, to form a crystalline semiconductor film having a larger crystal grain size than before, and a transistor is manufactured. Technology is disclosed.
[0006]
[Problems to be solved by the invention]
However, when an amorphous semiconductor film formed on a flat surface is crystallized by irradiating it with laser light, the crystal becomes polycrystals, and defects such as crystal grain boundaries are arbitrarily formed to align crystals with uniform orientation. Couldn't get.
[0007]
The crystal grain boundary contains crystal defects, which become carrier traps and cause the mobility of electrons or holes to decrease. In addition, a semiconductor film free from strain or crystal defects could not be formed due to volume shrinkage of the semiconductor film accompanying crystallization, thermal stress with the base, or lattice mismatch. Therefore, without a special method such as bonding SOI (Silicon on Insulator), it is equivalent to a MOS transistor formed on a single crystal substrate with a crystalline semiconductor film formed on an insulating surface and crystallized or recrystallized. Could not get the quality.
[0008]
The above-described flat display device or the like forms a transistor by forming a semiconductor film on a glass substrate, but it is almost impossible to arrange the transistor so as to avoid an arbitrarily formed crystal grain boundary. . In other words, the crystallinity of the channel formation region of the transistor is strictly controlled, and the grain boundaries and crystal defects that are included unintentionally cannot be excluded. As a result, not only the electrical characteristics of the transistors are inferior, but also the characteristics of individual elements vary.
[0009]
The present invention has been made in view of the above problems, and forms a crystalline semiconductor film in which a crystal grain boundary does not exist at least in a channel formation region, enables high-speed operation, high current driving capability, and between a plurality of elements. An object is to provide a semiconductor device including a semiconductor element or a semiconductor element group with small variation.
[0010]
[Means for Solving the Problems]
In order to solve the above problems, the present invention provides an island which is a constituent member of a semiconductor element such as a transistor by forming an insulating film provided with a concavo-convex portion extending in a linear stripe pattern on a substrate having an insulating surface. In accordance with the arrangement of the crystalline semiconductor film divided in a shape, after removing the convex part of the insulating film intersecting with it, an amorphous semiconductor film is formed on the insulating film and the semiconductor melted in the concave part of the insulating film The amorphous semiconductor film is melted and crystallized to form a crystalline semiconductor film, and the crystalline semiconductor film remaining on the projections of the insulating film is removed, and then unnecessary regions are removed by etching. A crystalline semiconductor film divided into islands from a crystalline semiconductor film formed in a recess is formed, and a gate insulating film and a gate electrode in contact with an upper surface portion of the crystalline semiconductor film are formed. is there.
[0011]
The recess may be formed by directly etching the surface of the insulating substrate, or may be formed by etching a silicon oxide, silicon nitride, or silicon oxynitride film. The recess is preferably formed in accordance with the arrangement of the semiconductor element, particularly the island-shaped semiconductor film including the channel formation region of the transistor, and is preferably formed so as to match at least the channel formation region. The recess is provided so as to extend in the channel length direction. The width of the concave portion (channel width direction in the case of forming a channel formation region) is 0.01 μm or more and 2 μm or less, preferably 0.1 to 1 μm, and the depth is 0.01 μm or more and 1 μm or less, preferably 0. It is formed with a thickness of 05 μm or more and 0.2 μm or less.
[0012]
In the first stage, the semiconductor film formed over the insulating film and over the recess is an amorphous semiconductor film or a polycrystalline semiconductor film formed by plasma CVD, sputtering, or low pressure CVD, or a multi-layer formed by solid phase growth. A crystalline semiconductor film or the like is applied. Note that the amorphous semiconductor film referred to in the present invention is not limited to a film having a completely amorphous structure in a narrow sense, but includes a state in which fine crystal particles are included, or a so-called microcrystalline semiconductor film, local Includes a semiconductor film including a crystal structure. Typically, an amorphous silicon film is applied, and in addition, an amorphous silicon germanium film, an amorphous silicon carbide film, or the like can also be applied. The polycrystalline semiconductor film is obtained by crystallizing these amorphous semiconductor films by a known method.
[0013]
As a means for melting and crystallizing the crystalline semiconductor film, pulsed oscillation or continuous oscillation laser light using a gas laser oscillation device or a solid laser oscillation device as a light source is applied. The laser light to be irradiated is focused in a linear shape by an optical system, and the intensity distribution may have a uniform region in the longitudinal direction and may be distributed in the lateral direction. As the oscillation device, a rectangular beam solid laser oscillation device is applied, and a slab laser oscillation device is particularly preferably applied. Alternatively, it is a solid state laser oscillation device using a rod doped with Nd, Tm, and Ho, especially YAG, YVO. _Four , YLF, YAlO _Three A slab structure amplifier may be combined with a solid-state laser oscillation device using a crystal doped with Nd, Tm, or Ho. As the slab material, crystals such as Nd: YAG, Nd: GGG (gadolinium / gallium / garnet), Nd: GsGG (gadolinium / scandium / gallium / garnet) are used. A slab laser travels in a zigzag optical path through this plate-like laser medium while repeating total reflection.
[0014]
Moreover, you may irradiate the strong light according to it. For example, light having a high energy density obtained by condensing light emitted from a halogen lamp, xenon lamp, high-pressure mercury lamp, metal halide lamp, or excimer lamp by a reflecting mirror or a lens may be used.
[0015]
Laser light or strong light condensed in a linear shape and extended in the longitudinal direction irradiates the crystalline semiconductor film, and relatively moves the irradiation position of the laser light and the substrate on which the crystalline semiconductor film is formed, The crystalline semiconductor film is melted by scanning a part or the entire surface of the laser beam, and crystallization or recrystallization is performed through this state. The scanning direction of the laser light is performed along the longitudinal direction of the recess formed in the insulating film and extending in a linear stripe pattern or the channel length direction of the transistor. As a result, the crystal grows along the scanning direction of the laser beam, and the crystal grain boundary can be prevented from crossing the channel length direction.
[0016]
The semiconductor device of the present invention manufactured as described above has a crystal in a direction parallel to a recess formed by a linear stripe pattern formed on an insulating surface connected between a pair of one conductivity type impurity regions. A channel formation region is formed by a crystalline semiconductor film including a plurality of crystal orientations without a grain boundary and a conductive layer overlapping with the crystalline semiconductor film via an insulating layer. The crystalline semiconductor film is characterized by having a channel width direction of 0.01 μm to 2 μm and a thickness of 0.01 μm to 1 μm.
[0017]
The channel formation region is configured such that the channel formation region is formed on the upper surface portion of the crystalline semiconductor film by the gate electrode overlapping with the gate insulating film covering the upper surface portion of the crystalline semiconductor film. . One or a plurality of such channel formation regions are provided in parallel between a pair of one conductivity type impurity regions. In this case, both sides of the channel formation region have a structure in which an insulating film is provided in close contact, and the gate insulating film and the gate electrode do not extend over the step of the semiconductor film. Can be reduced.
[0018]
As another configuration, the crystalline semiconductor film is provided over a glass or quartz substrate on a metal layer including one or more kinds selected from W, Mo, Ti, Ta, and Cr, and the crystalline property of the metal layer An insulating layer may be interposed between the semiconductor film and the semiconductor film. Alternatively, a metal layer containing one or more selected from W, Mo, Ti, Ta, and Cr is provided on a glass or quartz substrate, and an insulating layer made of aluminum nitride or aluminum oxynitride is provided on the metal layer. Further, a structure in which a crystalline semiconductor film is provided thereover may be employed. The metal layer formed here can function as a light-shielding film that blocks light incident on the channel formation region, or a specific potential can be applied to control the spread of the fixed charge or the depletion layer. Moreover, the function as a heat sink which dissipates Joule heat can also be provided.
[0019]
By setting the depth of the recesses to be equal to or greater than the thickness of the semiconductor film, the semiconductor melted by the irradiation with laser light or strong light aggregates and solidifies in the recesses due to surface tension. As a result, the thickness of the semiconductor film on the convex portion of the insulating film is reduced, and stress strain can be concentrated there. The side surface of the recess has the effect of defining the crystal orientation to some extent. The angle of the side surface of the recess is 5 to 120 degrees, preferably 80 to 100 degrees with respect to the substrate surface. By scanning the laser beam in a direction parallel to the channel length direction, the <110> orientation or the <100> orientation can be grown as a preferred orientation along the recess extending in that direction.
[0020]
When the semiconductor film is melted, it is agglomerated in the recesses formed on the insulating surface by surface tension, and the crystal growth from the approximate intersection of the bottom and side surfaces of the recesses concentrates the strain generated by crystallization in the region other than the recesses. Can be made. That is, the crystalline semiconductor film formed so as to fill the recesses can be freed from distortion. Then, the crystalline semiconductor film remaining on the insulating film and containing crystal grain boundaries and crystal defects is removed by etching.
[0021]
According to the present invention, it is possible to designate a semiconductor element such as a transistor, in particular, a location of a channel formation region of the transistor and form a crystalline semiconductor film having no crystal grain boundary. As a result, it is possible to eliminate a factor in which the characteristics vary due to inadvertently interposed crystal grain boundaries and crystal defects, and it is possible to form a transistor or a transistor element group having a small characteristic variation.
[0022]
Further, by forming the gate insulating film and the gate electrode so as to overlap with the side surface portion and the upper surface portion of the crystalline semiconductor film, the area of the channel formation region can be increased and the on-state current can be increased. Furthermore, by applying a gate voltage from three directions, carriers injected into the gate insulating film, particularly hot carriers, can be reduced, and the reliability of the transistor can be improved.
[0023]
DETAILED DESCRIPTION OF THE INVENTION
[Embodiment 1]
Hereinafter, embodiments of the present invention will be described with reference to the drawings. The perspective view shown in FIG. 1 shows a form in which a first insulating film 102 and second insulating films 103 to 105 having a linear stripe pattern are formed on a substrate 101. In FIG. 1, three strip-like patterns are formed by the second insulating film, but the number is not limited to that.
[0024]
As the substrate, a commercially available non-alkali glass substrate, a quartz substrate, a sapphire substrate, a substrate obtained by coating the surface of a single crystal or polycrystalline semiconductor substrate with an insulating film, or a substrate obtained by coating the surface of a metal substrate with an insulating film can be applied. In order to form a linear stripe pattern with a sub-micron design rule, it is necessary to keep the unevenness of the substrate surface, the undulation or twist of the substrate below the depth of focus of the exposure apparatus (particularly the stepper). Specifically, the waviness or twist of the substrate is 1 μm or less, preferably 0.5 μm or less in one exposure light irradiation region.
[0025]
The width W1 of the second insulating film formed in the linear stripe pattern is 0.1 to 10 μm (preferably 0.5 to 1 μm), and the interval W2 between the adjacent second insulating films is 0.01 to 2 μm (preferably 0). 0.1 to 1 μm), and the thickness d of the second insulating film is 0.01 to 1 μm (preferably 0.05 to 0.2 μm). The step shape does not need to be a regular periodic pattern, and may be arranged at a predetermined interval in accordance with the width of the island-shaped semiconductor film. The length L is not limited, and may be long enough to form a channel formation region of a transistor, for example, and may be formed on a part or the entire surface of a substrate.
[0026]
The first insulating film is made of silicon nitride, a material selected from silicon oxynitride, aluminum nitride, or aluminum oxynitride having a nitrogen content larger than the oxygen content, and is formed to a thickness of 30 to 300 nm. A second insulating film is formed of silicon oxide or silicon oxynitride with a thickness of 10 to 3000 nm, preferably 100 to 2000 nm, and a recess having a predetermined shape. Silicon oxide is composed of tetraethyl orthosilicate (TEOS) and O ₂ And can be formed by a plasma CVD method. Silicon nitride oxide film is SiH _Four , NH _Three , N ₂ O or SiH _Four , N ₂ It can be formed by plasma CVD using O as a raw material.
[0027]
As shown in FIG. 1, when a linear stripe pattern is formed with two insulating films, it is necessary to provide a selection ratio between the first insulating film and the second insulating film in the etching process. Actually, it is desirable to appropriately adjust the material and the film forming conditions so that the etching rate of the second insulating film is relatively faster than that of the first insulating film. Etching using buffered hydrofluoric acid or CHF _Three Performed by dry etching using And the angle of the side part of the recessed part formed with a 2nd insulating film should just be set suitably in the range of 5-120 degree | times, Preferably it is 80-100 degree | times.
[0028]
As shown in FIG. 2, an amorphous semiconductor film 106 covering the surface and the recess formed of the first insulating film 102 and the second insulating films 103 to 105 is 0.01 to 1 μm (preferably 0.05 to 0. 2 μm) in thickness. In other words, it is desirable that the second insulating film be formed to have a thickness that is about the same as or deeper than the depth of the recess formed by the second insulating film. For the amorphous semiconductor film, silicon, a compound or alloy of silicon and germanium, or a compound or alloy of silicon and carbon can be used.
[0029]
As shown in the figure, the amorphous semiconductor film is formed so as to cover the concavo-convex structure formed by the underlying first insulating film and second insulating film. Further, the influence of chemical contamination such as boron adhering to the surfaces of the first insulating film and the second insulating film is eliminated, and the amorphous semiconductor film is not directly in contact with the insulating surface. A silicon oxynitride film may be continuously formed as a third insulating film on the lower layer side without being exposed to the atmosphere in the same film forming apparatus.
[0030]
Then, the amorphous semiconductor film 106 is instantaneously melted and crystallized. In this crystallization, laser light or radiated light from a lamp light source is condensed and irradiated with an optical system to an energy density that melts the semiconductor film. In this step, it is particularly preferable to apply laser light using a continuous wave laser oscillation device as a light source. The applied laser light is linearly condensed by the optical system and expanded in the longitudinal direction, and its intensity distribution has a uniform region in the longitudinal direction and has a distribution in the lateral direction. It is desirable.
[0031]
As the laser oscillation device, a rectangular beam solid state laser oscillation device is applied, and a slab laser oscillation device is particularly preferably applied. As the slab material, crystals such as Nd: YAG, Nd: GGG (gadolinium / gallium / garnet), Nd: GsGG (gadolinium / scandium / gallium / garnet) are used. A slab laser travels in a zigzag optical path through this plate-like laser medium while repeating total reflection. Alternatively, it is a solid state laser oscillation device using a rod doped with Nd, Tm, and Ho, especially YAG, YVO. _Four , YLF, YAlO _Three A slab structure amplifier may be combined with a solid-state laser oscillation device using a crystal doped with Nd, Tm, or Ho. Then, as indicated by the arrows in the figure, scanning is performed in a direction intersecting the linear longitudinal direction. The term “linear” as used herein means that the ratio of the length in the longitudinal direction to the length in the short direction is 1 to 10 or more.
[0032]
The wavelength of the continuous wave laser beam is preferably 400 to 700 nm in consideration of the light absorption coefficient of the amorphous semiconductor film. Light in such a wavelength band is obtained by taking out the second harmonic and the third harmonic of the fundamental wave using a wavelength conversion element. As wavelength conversion element, ADP (ammonium dihydrogen phosphate), Ba ₂ NaNb _Five O ₁₅ (Sodium barium niobate), CdSe (selenium cadmium), KDP (potassium dihydrogen phosphate), LiNbO _Three (Lithium niobate), Se, Te, LBO, BBO, KB5 and the like are applied. It is particularly desirable to use LBO. A typical example is Nd: YVO _Four The second harmonic (532 nm) of the laser oscillation device (fundamental wave 1064 nm) is used. The laser oscillation mode is TEM ₀₀ Apply single mode.
[0033]
In the case of silicon selected as the most suitable material, the absorption coefficient is 10 ^Three -10 ^Four cm ^-1 The region which is is almost in the visible light region. When crystallizing a substrate having a high visible light transmittance such as glass and an amorphous semiconductor film formed with a thickness of 30 to 200 nm using silicon, by irradiating light in the visible light region with a wavelength of 400 to 700 nm, Crystallization can be performed without selectively damaging the base insulating film by selectively heating the semiconductor film. Specifically, the penetration depth of light having a wavelength of 532 nm is approximately 100 nm to 1000 nm with respect to the amorphous silicon film, and can sufficiently reach the inside of the amorphous semiconductor film 106 formed with a film thickness of 30 nm to 200 nm. it can. That is, it is possible to heat from the inside of the semiconductor film, and almost the entire semiconductor film in the laser light irradiation region can be heated uniformly.
[0034]
The laser beam is scanned in a direction parallel to the direction in which the linear stripe pattern extends, and the melted semiconductor flows into the recess due to surface tension and solidifies. In the solidified state, the surface becomes almost flat as shown in FIG. Further, a crystal growth end and a crystal grain boundary are formed on the second insulating film (on the convex portion) (region 110 indicated by hatching in the figure). Thus, the crystalline semiconductor film 107 is formed.
[0035]
After that, heat treatment is preferably performed at 500 to 600 ° C. to remove distortion accumulated in the crystalline semiconductor film. This distortion occurs due to semiconductor volume shrinkage caused by crystallization, thermal stress with the base, or lattice mismatch. This heat treatment may be performed using a normal heat treatment apparatus. However, for example, a gas heating type rapid thermal annealing (RTA) method may be used for 1 to 10 minutes. Note that this step is not an essential requirement in the present invention, and may be appropriately selected.
[0036]
Thereafter, as shown in FIG. 4, the surface of the crystalline semiconductor film 107 is etched to selectively extract the crystalline semiconductor films 108 and 109 embedded in the recesses. At this time, only the high-quality semiconductor region can be left by etching away the region 110 where the growth edge and the crystal grain boundary are concentrated.
[0037]
The extracted crystalline semiconductor films 108 and 109 have a feature that they have a plurality of crystal orientations and no crystal grain boundaries are formed. Then, a gate insulating film and a gate electrode are formed using the crystalline semiconductor in the island-shaped semiconductor regions 108 and 109, particularly in the recesses, so that the channel formation region is positioned. Through these steps, a transistor can be completed.
[0038]
FIG. 5 is a conceptual diagram showing the knowledge of crystallization obtained from the experimental results by the present inventors. 5A to 5E schematically illustrate the relationship between crystal growth and the depth and interval of the recesses formed by the first insulating film and the second insulating film.
[0039]
5, t01: thickness of the amorphous semiconductor film on the second insulating film (convex portion), t02: thickness of the amorphous semiconductor film in the concave portion, t11: second Thickness of crystalline semiconductor film on insulating film (convex portion), t12: Thickness of crystalline semiconductor film in concave portion, d: Thickness of second insulating film (depth of concave portion), W1: Second insulating film , W2: the width of the recess.
[0040]
FIG. 5A shows a case where d <t02 and W1, W2 are approximately equal to or smaller than 1 μm. When the depth of the recess is smaller than that of the amorphous semiconductor film 204, melt crystallization is performed. Even through this process, since the recess is shallow, the surface of the crystalline semiconductor film 205 is not sufficiently planarized. That is, the surface state of the crystalline semiconductor film 205 is a state in which the uneven shape of the base is reflected.
[0041]
FIG. 5B shows a case where d ≧ t02 and W1 and W2 are approximately equal to or smaller than 1 μm. In the case where the depth of the recess is substantially equal to or larger than that of the amorphous semiconductor film 203, FIG. The surface tension works and collects in the recess. In the solidified state, the surface becomes almost flat as shown in FIG. In this case, t11 <t12, stress concentrates on the thin portion 220 on the second insulating film 202, strain is accumulated therein, and a crystal grain boundary is formed.
[0042]
The scanning electron microscope (SEM) photograph shown in FIG. 28 shows an example. A 150 nm step is provided, and a 150 nm amorphous silicon film is formed on a base insulating film having a 0.5 μm convex width and spacing. The result of crystallization is shown. The surface of the crystalline semiconductor film is a seco liquid (HF: H) in order to reveal the grain boundary. ₂ O = 2: 1 K as additive ₂ Cr ₂ O ₇ Etched with a chemical solution prepared using As is clear from this photograph, it can be seen that the crystal grain boundaries are concentrated on the step-shaped convex portions.
[0043]
FIG. 29 shows the result of obtaining the orientation of the crystalline semiconductor film formed in the recess by a backscattered electron diffraction pattern (EBSP). EBSP provides a scanning electron microscope (SEM) with a dedicated detector, which irradiates the crystal plane with an electron beam and causes the computer to recognize the crystal orientation from the Kikuchi line. The crystallinity is measured not only on the surface orientation but also in all directions of the crystal (hereinafter, this method is referred to as EBSP method for convenience).
[0044]
The data in FIG. 29 indicates that the crystal grows in the direction parallel to the scanning direction of the laser beam condensed linearly in the concave portion. Although the <110> orientation is dominant as the growth plane orientation, the growth of the <100> orientation also exists.
[0045]
FIG. 5C shows a case where d >> t02 and W1, W2 are approximately equal to or smaller than 1 μm. In this case, the crystalline semiconductor film 204 is formed so as to fill the recess, and the second insulating film It is also possible to make it hardly remain on 203.
[0046]
FIG. 5D shows a case where d ≧ t02 and W1 and W2 are about 1 μm or slightly larger. When the width of the concave portion is widened, the crystalline semiconductor film 205 fills the concave portion, and there is an effect of planarization. Near the center of the recess, a crystal grain boundary and a crystal sub-grain boundary are generated. Similarly, stress is concentrated on the second insulating film, strain is accumulated therein, and a crystal grain boundary is formed. This is presumed to be because the effect of stress relaxation is reduced by increasing the interval.
[0047]
FIG. 5E shows a case where d ≧ t02 and W1 and W2 are larger than 1 μm, and the state of FIG.
[0048]
The scanning electron microscope (SEM) photograph shown in FIG. 30 shows an example. A 150 nm step is provided, and a 150 nm amorphous silicon film is formed on a base insulating film having a 1.8 μm convex width and spacing. The result of crystallization is shown. The surface of the crystalline semiconductor film is etched with Seco solution in order to make the crystal grain boundary obvious. As is clear from comparison with FIG. 28, it can be seen that the crystal grain boundary extends not only to the step-shaped convex portion but also to the concave portion. Therefore, with such a structure, a crystalline semiconductor film having no crystal grain boundary cannot be selectively extracted.
[0049]
As described above with reference to FIGS. 5A and 5B, when a semiconductor element is formed, particularly when a channel formation region in a transistor is formed using such a semiconductor film, the configuration in FIG. 5B is most suitable. it is conceivable that. In addition, although the example in which the uneven shape of the base for forming the crystalline semiconductor film is formed using the first insulating film and the second insulating film is shown here, it is not limited to the form shown here and has a similar shape. It can be replaced if there is one. For example, the concave surface may be formed directly by etching the surface of the quartz substrate to provide an uneven shape.
[0050]
FIG. 6 shows an example of the configuration of a laser processing apparatus that can be applied for crystallization. FIG. 6 shows laser oscillators 401a and 401b, shutters 402, high conversion mirrors 403 to 406, cylindrical lenses 408 and 409, slits 407, mounting table 411, and driving means 412 and 413 for displacing the mounting table 411 in the X and Y directions. A front view and a side view of the configuration of a laser processing apparatus including a control means 414 for controlling the driving means, an information processing means 415 for sending a signal to the control means 414 based on a program stored in advance, and the like. It is shown by the figure.
[0051]
As the laser oscillation device, a rectangular beam solid laser oscillation device is applied, and a slab laser oscillation device is particularly preferably applied. Or YAG, YVO _Four , YLF, YAlO _Three A slab structure amplifier may be combined with a solid-state laser oscillation device using a crystal doped with Nd, Tm, or Ho. As the slab material, crystals such as Nd: YAG, Nd: GGG (gadolinium / gallium / garnet), Nd: GsGG (gadolinium / scandium / gallium / garnet) are used. In addition, a gas laser oscillation device and a solid laser oscillation device capable of continuous oscillation can also be applied. As continuous wave solid state laser oscillator, YAG, YVO _Four , YLF, YAlO _Three A laser oscillation device using a crystal doped with Cr, Nd, Er, Ho, Ce, Co, Ti, or Tm is applied. The fundamental wave of the oscillation wavelength varies depending on the material to be doped, but oscillates at a wavelength of 1 μm to 2 μm. In order to obtain a higher output of 5 W or more, diode-pumped solid state laser oscillation devices may be cascaded.
[0052]
Circular or rectangular laser light output from such a laser oscillation device is condensed linearly in the cross-sectional shape of the irradiated surface by the cylindrical lenses 408 and 409. Further, in order to prevent interference on the irradiation surface, the high conversion mirror is appropriately adjusted so that the incident light is incident from an oblique direction with an angle of 10 to 80 degrees. If the cylindrical lenses 408 and 409 are made of synthetic quartz, a high transmittance can be obtained, and the coating applied to the surface of the lens is applied in order to realize a transmittance of 99% or more with respect to the wavelength of the laser beam. Of course, the cross-sectional shape of the irradiation surface is not limited to a linear shape, and may be an arbitrary shape such as a rectangular shape, an elliptical shape, or an oval shape. In any case, the ratio between the short axis and the long axis is within the range of 1 to 10 to 1 to 100. Further, the wavelength conversion element 410 is provided to obtain harmonics with respect to the fundamental wave.
[0053]
In addition, the substrate 420 can be laser-processed by moving the mounting table 411 in the biaxial direction by the driving means 412 and 413. The movement in one direction can be continuously performed at a constant speed of 1 to 200 cm / sec, preferably 5 to 50 cm / sec, over a distance longer than the length of one side of the substrate 420, and the other side is a line. It is possible to discontinuously step the distance as much as the longitudinal direction of the beam. The oscillation of the laser oscillation devices 401 a and 401 b and the mounting table 411 are operated in synchronization by the information processing means 415.
[0054]
The mounting table 411 linearly moves in the X direction shown in the drawing, so that the entire surface of the substrate can be processed with laser light emitted from a fixed optical system. The position detection means 416 detects that the substrate 420 is at the irradiation position of the laser beam, transmits the signal to the information processing means 415, and the information processing means 415 determines the timing of the oscillation operations of the laser oscillation devices 401a and 401b. Synchronized. In other words, when the substrate 420 is not at the laser light irradiation position, the laser oscillation is stopped and the life thereof is extended.
[0055]
The laser light irradiated onto the substrate 420 by the laser irradiation apparatus having such a structure can process a desired region or the entire surface of the semiconductor film by relatively moving in the X direction or the Y direction shown in the drawing.
[0056]
As described above, a linear stripe pattern having a concavo-convex shape is formed by an insulating film, an amorphous semiconductor film is deposited thereon, and crystallized through a molten state by irradiation with laser light, whereby the semiconductor is formed in the recess. Then, strain or stress accompanying crystallization can be concentrated in a region other than the concave portion, and a region having poor crystallinity such as a crystal grain boundary can be selectively formed.
[0057]
That is, a crystalline semiconductor film in which a plurality of crystal grains extending in a direction parallel to a direction in which a linear stripe pattern extends is formed without a crystal grain boundary having a plurality of crystal orientations in a recess Can remain. By forming a transistor so that a channel formation region is formed using such a crystalline semiconductor film, current driving capability can be improved at high speed, and device reliability can be improved. .
[0058]
[Embodiment 2]
In the formation of the crystalline semiconductor film of the present invention, in addition to the method of crystallizing the amorphous semiconductor film by irradiating the amorphous semiconductor film as shown in Embodiment Mode 1, the laser light is further crystallized after crystallization by solid phase growth. May be melted and recrystallized.
[0059]
For example, after the amorphous semiconductor film 106 is formed in FIG. 2, the crystallization is promoted by lowering the crystallization temperature of the amorphous semiconductor film (eg, amorphous silicon film) and improving the orientation. Ni is added as a catalytic metal element. There is no limitation on the method of adding Ni, and a spin coating method, a vapor deposition method, a sputtering method, or the like can be applied. In the case of the spin coating method, an aqueous solution containing 5 ppm of nickel acetate is applied to form a metal element-containing layer. Of course, the catalyst element is not limited to Ni, and other known materials may be used.
[0060]
Thereafter, the amorphous semiconductor film 106 is crystallized by heat treatment at 580 ° C. for 4 hours. This crystallized semiconductor film is melted and recrystallized by irradiating it with laser light or strong light equivalent thereto. Thus, the crystalline semiconductor film 107 having a substantially flat surface can be obtained as in FIG. Similarly, the crystalline semiconductor film 107 is also formed with a region where a growth edge or a crystal grain boundary 110 is formed.
[0061]
The advantage of using a crystallized semiconductor film as an object to be irradiated with laser light is the fluctuation rate of the light absorption coefficient of the semiconductor film. Even if the crystallized semiconductor film is melted by irradiation with laser light, the light absorption coefficient is Almost no change. Therefore, a wide margin of laser irradiation conditions can be taken.
[0062]
A metal element remains in the crystalline semiconductor film thus formed, but can be removed by gettering treatment. For details of this technique, refer to Japanese Patent Application No. 2001-019367 (or Japanese Patent Application No. 2002-020801). Further, the heat treatment accompanying the gettering treatment has an effect of alleviating distortion of the crystalline semiconductor film.
[0063]
Thereafter, the recessed crystalline semiconductor film is extracted as in the first embodiment. The extracted crystalline semiconductor film has a feature that it has a plurality of crystal orientations and no crystal grain boundary is formed. Then, a gate insulating film and a gate electrode are formed so that the channel formation region is positioned using the crystalline semiconductor in the island-shaped semiconductor region, particularly in the recess. Through these steps, a transistor can be completed.
[0064]
[Embodiment 3]
Next, one embodiment of a transistor in which a crystalline silicon film is formed over a base insulating film having a recess in this embodiment and a channel formation region is provided in a filling region filled in the recess is illustrated in the drawings. It explains using. Note that, in each drawing according to the present embodiment, (A) is a top view, and (B) and subsequent drawings are longitudinal sectional views of corresponding parts.
[0065]
In FIG. 7, a first insulating film 302 made of silicon nitride having a thickness of 30 to 300 nm, silicon oxynitride, aluminum nitride, or aluminum oxynitride having a nitrogen content larger than the oxygen content is formed on a glass substrate 301. A linear stripe pattern having an uneven shape is formed on the second insulating film 303 made of silicon oxide or silicon oxynitride. The silicon oxide film is formed by TEOS and O by plasma CVD. ₂ And a reaction pressure of 40 Pa, a substrate temperature of 400 ° C., and a high frequency (13.56 MHz) power density of 0.6 W / cm. ² And is deposited to a thickness of 10 to 3000 nm, preferably 100 to 2000 nm, and then a recess 304 is formed by etching. The width of the recess is 0.01 to 1 [mu] m, preferably 0.05 to 0.2 [mu] m, particularly in the place where the channel forming region is arranged.
[0066]
Next, as shown in FIG. 8, the second insulating film 303 in a portion intersecting with the arrangement of the island-shaped semiconductor film constituting the transistor (the region surrounded by the dotted line shown in FIG. 8A) is formed. The recess 304 is shaped by removing by etching. The pattern of the second insulating film may be formed at the stage described with reference to FIG.
[0067]
After that, as shown in FIG. 9, the third insulating film 305 and the amorphous silicon film 306 made of an oxide film or a silicon oxynitride film are formed on the first insulating film 302 and the second insulating film 303 using the same plasma CVD apparatus. The film is continuously formed without being exposed to the atmosphere. The amorphous silicon film 305 is formed of a semiconductor film containing silicon as a main component, and SiH is formed by plasma CVD. _Four Is used as a raw material gas. At this stage, a non-flat surface shape is formed by covering the bottom surface and side surfaces of the recess 304 as shown.
[0068]
Crystallization is performed by irradiating a continuous wave laser beam. FIG. 10 shows the state after the crystallization. The crystallization conditions are YVO in continuous oscillation mode. _Four Using a laser oscillator, the output of 5 to 10 W of the second harmonic (wavelength 532 nm) is condensed into linear laser light having a ratio of the longitudinal direction to the transverse direction of 10 or more in the optical system, and the longitudinal direction. Are condensed so as to have a uniform energy density distribution, and are crystallized by scanning at a speed of 5 to 200 cm / sec. A uniform energy density distribution does not exclude anything that is completely constant, but the allowable range in the energy density distribution is ± 10%. A laser processing apparatus having the configuration shown in FIG. 6 can be applied for such laser light irradiation.
[0069]
The relationship between the scanning direction of the laser beam 360 condensed linearly and the arrangement of the recesses is shown in FIG. It is desirable that the intensity distribution of the laser beam 360 condensed linearly has a region where the intensity distribution is uniform in the longitudinal direction. This is because the temperature of the semiconductor to be heated makes the temperature of the irradiated region constant. This is because if the temperature distribution is generated in the longitudinal direction of the laser beam condensed linearly (direction intersecting the scanning direction), the crystal growth direction cannot be limited to the scanning direction of the laser beam. By aligning the linear stripe pattern with the scanning direction of the laser beam 360 condensed linearly as shown in the figure, the crystal growth direction and the channel length direction of all transistors are matched. Can do. Thereby, the characteristic variation between the elements of the transistor can be reduced. In addition, since a part or all of the linear stripe pattern is shared, the margin of laser irradiation conditions can be widened. Accordingly, it is possible to prevent the silicon film from scattering due to ablation.
[0070]
Further, the crystallization by the laser beam condensed linearly may be completed by only one scan (that is, one direction), or may be reciprocated to improve the crystallinity. Furthermore, after crystallizing with laser light, the surface of the silicon film is treated with an alkali solution such as oxide removal with hydrofluoric acid or ammonia hydrogen peroxide solution treatment, and the poor quality part with high etching rate is selectively used. It may be removed and the same crystallization treatment may be performed again. In this way, crystallinity can be increased.
[0071]
By irradiating with laser light under these conditions, the amorphous semiconductor film is instantaneously melted and crystallized. In practice, crystallization proceeds while the melting zone moves. The molten silicon is agglomerated and solidified in the recesses due to surface tension. As a result, as shown in FIG. 10, a crystalline semiconductor film 307 having a flat surface is formed in a form of filling the recesses 304.
[0072]
After that, as shown in FIG. 11, an etching process is performed so that the crystalline semiconductor film 307 remains at least in the concave portion 304. By this etching treatment, the crystalline semiconductor film over the third insulating film 305 is removed, and a crystalline semiconductor film 307 made of a crystalline semiconductor film in accordance with the shape of the recess is obtained. The crystalline semiconductor film can be etched selectively with the underlying oxide film by using a fluorine-based gas and oxygen as etching gases. For example, as an etching gas, CF _Four And O ₂ The mixed gas is applied.
[0073]
Further, island-shaped semiconductor films 308 to 310 shown in FIG. 12 are formed from the crystalline semiconductor film 307 shown in FIG. As shown in Embodiment Mode 1, the island-shaped semiconductor film 308 has a feature that it has a plurality of crystal orientations and no crystal grain boundary is formed. Note that FIG. 12 does not limit the shape of the island-shaped semiconductor films 308 to 310, and as described in the first embodiment, the shape is not particularly limited within a range in accordance with a predetermined design rule. Absent. For example, the shape of the island-shaped semiconductor film in FIG. 12 is such that a plurality of strip-shaped crystalline semiconductor films are connected to a pair of rectangular crystalline semiconductor films. The channel formation region of the transistor is arranged in the strip-shaped crystalline semiconductor film.
[0074]
FIG. 13 shows the top of the island-shaped semiconductor film 308. Face A fourth insulating film 312 used as a cover gate insulating film and conductive films 313 and 314 used as gate electrodes are formed. The fourth insulating film 312 forms a 30-200 nm silicon oxide film or silicon oxynitride film. The conductive films 313 to 314 are formed using tungsten, an alloy containing tungsten, aluminum, an aluminum alloy, or the like.
[0075]
FIG. 14 shows a step of forming one conductivity type impurity regions 315 to 317 in the island-shaped semiconductor films 308 to 310. Here, n-type impurity regions 315 and 317 and a p-type impurity region 316 are provided for convenience. These impurity regions may be formed in a self-aligned manner using the conductive films 313 and 314 used as gate electrodes as a mask, or may be formed by masking with a photoresist or the like. The impurity regions 313 to 317 form source and drain regions, and a low-concentration drain region can be appropriately provided as necessary.
[0076]
For the impurity regions 315 to 317, an ion implantation method or an ion doping method in which impurity ions are accelerated by an electric field and implanted into the semiconductor film is applied. In this case, the presence or absence of mass separation of the ion species to be implanted does not constitute an essential problem in applying the present invention.
[0077]
Then, as shown in FIG. 15, a fifth insulating film 320 is formed of a silicon nitride film or a silicon oxynitride film containing hydrogen of about 50 to 100 nm. By performing heat treatment at 400 to 450 ° C. in this state, hydrogen contained in the silicon nitride film or the silicon oxynitride film is released, and the island-shaped semiconductor film can be hydrogenated. A sixth insulating film 321 formed of a silicon oxide film or the like is formed, and wirings 322 to 326 that are in contact with the impurity regions 313 that form the source and drain regions are formed.
[0078]
Thus, an n-channel transistor and a p-channel transistor can be formed. FIG. 15 shows a multi-channel transistor in which a plurality of channel formation regions are arranged in parallel and are connected to a pair of impurity regions. In addition, an example in which an n-channel multichannel transistor 327 and a p-channel multichannel transistor 328 form an inverter circuit that is a basic circuit of a CMOS structure is shown. In this configuration, the number of channel formation regions provided in parallel is not limited, and a plurality of channel formation regions may be provided as necessary. For example, a single channel such as an n-channel transistor 329 may be used.
[0079]
[Embodiment 4]
In Embodiment 3, the transistor has a single drain structure; however, a lightly doped drain (LDD) may be provided. FIG. 17 shows an example of an n-channel multichannel transistor having an LDD structure.
[0080]
The structure of the transistor illustrated in FIG. 17A is an example in which a gate electrode is formed using a nitride metal 330a such as titanium nitride or tantalum nitride and a refractory metal 330b such as tungsten or tungsten alloy. A spacer 331 is provided on a side surface of the gate electrode 350b. Provided. The spacer 331 may be formed of an insulator such as silicon oxide, may be formed of n-type polycrystalline silicon in order to have conductivity, and is formed by anisotropic dry etching. The LDD region 332 can be formed in a self-aligned manner with respect to the gate electrode 330b by forming the LDD region 332 before forming the spacer. When the spacer is formed of a conductive material, a gate-overlapped LDD (Gate-Overlapped LDD) structure in which the LDD region substantially overlaps with the gate electrode can be obtained.
[0081]
On the other hand, FIG. 17B shows a structure in which the gate electrode 350a is not provided, and in this case, an LDD structure is obtained.
[0082]
In FIG. 17C, an n-type impurity region 334 that forms an LDD region is formed adjacent to the n-type impurity region 315. The gate electrode 333 has a two-layer structure, and the n-type impurity region 334 forming the n-type impurity region 322 and the LDD region can be formed in a self-aligned manner. Refer to Japanese Patent Application No. 2000-128526 or Japanese Patent Application No. 2001-011085 for details of such a gate electrode and impurity region and a manufacturing method thereof.
[0083]
In any case, the structure in which the LDD region is formed in a self-aligned manner by such a gate structure is particularly effective when the design rule is miniaturized. Although a unipolar transistor structure is shown here, a CMOS structure can be formed as in the fourth embodiment.
[0084]
In this embodiment, the configuration other than the configuration of the gate electrode and the LDD region is the same as that of the third embodiment, and detailed description thereof is omitted.
[0085]
[Embodiment 5]
The present invention can be applied to various semiconductor devices. A display panel manufactured based on Embodiment Modes 1 to 4 will be described.
[0086]
In FIG. 18, a substrate 900 includes a pixel portion 902, gate signal side driver circuits 901a and 901b, a data signal side driver circuit 901c, an input / output terminal portion 908, and a wiring or a wiring group 917. The seal pattern 940 may partially overlap with the gate signal side driving circuits 901a and 901b, the data signal side driving circuit 901c, and the wiring or wiring group 917 that connects the driving circuit portion and the input terminal. In this way, the area of the frame region (the peripheral region of the pixel portion) of the display panel can be reduced. An FPC 936 is fixed to the external input terminal portion.
[0087]
Further, a chip 950 on which various logic circuits, high-frequency circuits, memories, microprocessors, media processors / DSPs (Digital Signal Processors), graphics LSIs, cryptographic LSIs, amplifiers and the like are formed using the transistors of the present invention is mounted. May be. These functional circuits are formed with design rules different from those of the pixel portion 902, the gate signal side drive circuits 901a and 901b, and the data signal side drive circuit 901c. Specifically, a design rule of 1 μm or less is applied. The As a gate structure of the transistor, FIGS. 17A and 17B are suitable. Further, the mounting method is not limited, and a COG method or the like is applied.
[0088]
For example, the transistor described in any of Embodiments 3 to 4 can be used as a switching element of the pixel portion 902, and further as an active element constituting the gate signal side driver circuits 901a and 901b and the data signal side driver circuit 901c.
[0089]
FIG. 24 shows an example of the structure of one pixel in the pixel portion 902, which includes transistors 501 to 803. These are switching, resetting, and driving transistors that control the light emitting elements and the liquid crystal elements included in the pixel, respectively. The manufacturing process of these transistors is shown in FIGS. The details of the process are the same as those in the third embodiment, and a detailed description thereof is omitted.
[0090]
FIG. 19 shows a state in which a first insulating film 502 and a second insulating film 503 for forming a linear stripe pattern are formed. A recess 504 is formed by the second insulating film. A region surrounded by a dotted line in the figure indicates a region where an island-shaped semiconductor film including a channel formation region is formed.
[0091]
FIG. 20 shows a step in which an amorphous semiconductor film 505 is deposited thereon and a crystalline semiconductor film 507 is formed by irradiating the amorphous semiconductor film 505 with a linearly focused laser beam 506.
[0092]
FIG. 21 shows a state where the crystalline semiconductor film on the second insulating film 503 is selectively removed by etching, and the crystalline semiconductor film 508 is formed so as to fill the recesses. Further, FIG. 22 shows a state in which the crystalline semiconductor film 508 is etched to form island-shaped semiconductor films 509 and 510.
[0093]
Then, as shown in FIG. 23, a gate insulating film (not shown) and gate electrodes (or gate wirings) 514 to 516 are formed. The recesses 511 to 513 are formed at positions where the island-shaped semiconductor films 509 and 510 intersect with the gate electrodes (or gate wirings) 514 to 516. Thereby, a gate structure similar to that of the third embodiment can be obtained. For the details of the gate structure, the structure shown in Embodiment Mode 4 may be adopted.
[0094]
Thereafter, an n-type or p-type impurity region is formed, and various wirings 518 to 520 and a pixel electrode 517 are formed through an insulating film, whereby the pixel structure shown in FIG. 24 can be obtained.
[0095]
FIG. 25A shows a longitudinal sectional view corresponding to the line AA ′ in FIG. Further, a liquid crystal display device or an organic light emitting device can be completed using the pixel electrode 517 as shown in FIG.
[0096]
FIG. 25B shows a form (upward emission type) in which light emitted from the organic light emitting element 33 is emitted to the side opposite to the substrate side. A cathode which is one electrode of the organic light emitting element 33 connected to the wiring 520 is formed by the pixel electrode 517. The organic compound layer 27 is formed from the cathode side in the order of an electron injecting and transporting layer, a light emitting layer, and a hole injecting and transporting layer. A thin translucent metal layer 28 is provided between the anode 29 formed on the upper layer side. As the anode 29, a light-transmitting conductive film such as indium tin oxide (ITO), zinc oxide (ZnO), indium zinc oxide (IZO), or the like is formed by resistance heating evaporation. The metal layer 28 prevents the organic compound layer 27 from being damaged and the device characteristics from being deteriorated when the anode 29 is formed. Thereafter, a protective film 24 and a passivation film 25 are formed.
[0097]
When the organic compound layer 21 is formed of a low molecular organic compound, a hole injection transport layer formed of copper phthalocyanine (CuPc) and MTDATA and α-NPD which are aromatic amine materials, Tris-8-quinolino Latoaluminum complex (Alq _Three The electron injecting layer and the light emitting layer formed in (1) can be laminated. Alq _Three Enables light emission (fluorescence) from a singlet excited state.
[0098]
In order to increase luminance, it is preferable to use light emission (phosphorescence) from a triplet excited state. In this case, a carbazole-based CBP + Ir (ppy) is formed on the hole injection transport layer formed of CuPc, which is a phthalocyanine-based material, and α-NPD, which is an aromatic amine-based material, as the organic compound layer 21. _Three Is used to form a light emitting layer, and bathocuproin (BCP) is used to form a hole blocking layer, Alq _Three It is also possible to have a structure in which the electron injection / transport layer is stacked.
[0099]
The above two structures are examples using a low molecular weight organic compound, but an organic light emitting device combining a high molecular weight organic compound and a low molecular weight organic compound can also be realized. For example, from the anode side as the organic compound layer 21, a hole injection transport layer by a polythiophene derivative (PEDOT) of a high molecular organic compound, a hole injection transport layer by α-NPD, CBP + Ir (ppy) _Three Light emitting layer, BCP hole blocking layer, Alq _Three An electron injecting and transporting layer may be laminated. By changing the hole injection layer to PEDOT, the hole injection characteristics can be improved and the light emission efficiency can be improved.
[0100]
In any case, light emission from the triplet excited state (phosphorescence) has higher emission efficiency than light emission from the singlet excited state (fluorescence), and the operating voltage (light emission from the organic light emitting element) can be obtained with the same light emission luminance. The voltage required for making it low) can be lowered.
[0101]
As described above, a display panel using an organic light-emitting element can be manufactured using the present invention. Further, if the arrangement of the anode and the cathode is reversed, it is possible to adopt a form in which light emission is emitted to the substrate side (downward emission type). Furthermore, although not illustrated here, a display panel using the electro-optical characteristics of liquid crystal can also be manufactured.
[0102]
[Embodiment 6]
In the transistor of the present invention, by providing a conductive layer on the lower layer side, a so-called substrate bias can be applied. The method for manufacturing the transistor is according to Embodiment Mode 3, and the difference will be described with reference to FIGS.
[0103]
In FIG. 26A, a silicon nitride film is formed as a first insulating film 802 over a substrate, and a tungsten film 803 is formed thereon by a sputtering method. In particular, when a silicon nitride film is formed by a high frequency sputtering method, a dense film can be formed. The second insulating film 803 is formed of a silicon oxide film. The silicon oxide film forms a recess as shown in the figure by etching, but it can be easily processed because the selectivity with the underlying tungsten film is about 30.
[0104]
Over this, a silicon oxynitride film and an amorphous silicon film 805 are successively formed as a third insulating film 805, melted and crystallized, and the surface layer portion is etched to form crystals as shown in FIG. A conductive silicon film 807 is formed. After that, a gate insulating film 808 and a gate electrode 809 are formed as shown in FIG. Since the gate insulating film 808 is formed over the tungsten film 803, there is no short circuit with the gate electrode 809.
[0105]
In such a mode, when the tungsten film 803 is fixed to the ground potential, variation in threshold voltage of the transistor can be reduced. Further, when the same potential as that of the gate electrode 809 is applied for driving, the on-current can be increased.
[0106]
In order to enhance the heat dissipation effect, aluminum nitride or aluminum oxynitride is preferably formed over the tungsten film 803 as shown in FIG. The purpose is to ensure the etching processing selectivity. That is, CHF _Three Silicon nitride is not suitable, and aluminum nitride or aluminum oxynitride is suitable for removing the silicon oxide as the second insulating film with a fluorine-based etching gas or the like and not exposing the underlying metal film. .
[0107]
Such a transistor structure can be applied in combination with any of Embodiment Modes 3 to 5.
[0108]
[Embodiment 7]
Various devices can be completed using the present invention. Examples thereof include portable information terminals (electronic notebooks, mobile computers, mobile phones, etc.), video cameras, digital cameras, personal computers, television receivers, mobile phones, and the like. An example of these is shown in FIG.
[0109]
FIG. 31A illustrates an example of completing a television receiver by applying the present invention, which includes a housing 3001, a support base 3002, a display portion 3003, and the like. In addition to the display portion 3003, a transistor manufactured according to the present invention can be formed using various integrated circuits such as various logic circuits, high-frequency circuits, memories, microprocessors, media processors, and graphics LSIs on a glass substrate. According to the invention, a television receiver can be completed.
[0110]
FIG. 31B shows an example in which the present invention is applied to complete a video camera, which includes a main body 3011, a display portion 3012, an audio input portion 3013, an operation switch 3014, a battery 3015, an image receiving portion 3016, and the like. . In addition to the display portion 3012, various integrated circuits such as various logic circuits, high-frequency circuits, memories, microprocessors, media processors, and graphics LSIs can be formed over the glass and incorporated in the transistor manufactured according to the present invention. A video camera can be completed by the invention.
[0111]
FIG. 31C illustrates an example in which a laptop personal computer is completed by applying the present invention, which includes a main body 3021, a housing 3022, a display portion 3023, a keyboard 3024, and the like. In addition to the display portion 3023, a transistor manufactured according to the present invention can be formed using various integrated circuits such as various logic circuits, high-frequency circuits, memories, microprocessors, media processors, graphics LSIs, and cryptographic LSIs on a glass substrate. The personal computer can be completed according to the present invention.
[0112]
FIG. 31D is an example in which a PDA (Personal Digital Assistant) is completed by applying the present invention, and includes a main body 3031, a stylus 3032, a display portion 3033, operation buttons 3034, an external interface 3035, and the like. In addition to the display portion 3033, various transistors, such as various logic circuits, high-frequency circuits, memories, microprocessors, media processors, graphics LSIs, and cryptographic LSIs, can be formed over a glass and manufactured by the present invention. According to the present invention, a PDA can be completed.
[0113]
FIG. 31E is an example in which a sound reproducing device is completed by applying the present invention, specifically, an in-vehicle audio device, which includes a main body 3041, a display portion 3042, operation switches 3043, 3044, and the like. Has been. In addition to the display portion 3042, a transistor manufactured according to the present invention can include various integrated circuits such as various logic circuits, high-frequency circuits, memories, microprocessors, media processors, graphics LSIs, and amplifier circuits formed on glass. The audio device can be completed according to the present invention.
[0114]
FIG. 31F is an example in which the present invention is applied to complete a digital camera. A main body 3051, a display portion (A) 3052, an eyepiece portion 3053, an operation switch 3054, a display portion (B) 3055, a battery 3056. Etc. Transistors manufactured according to the present invention include a display portion (A) 3052 and a display portion (B) 3055 as well as various integrated circuits such as various logic circuits, high-frequency circuits, memories, microprocessors, media processors, graphics LSIs, and cryptographic LSIs. Can be formed and incorporated on glass, and a digital camera can be completed by the present invention.
[0115]
FIG. 31G illustrates an example in which a cellular phone is completed by applying the present invention, which includes a main body 3061, an audio output portion 3062, an audio input portion 3063, a display portion 3064, operation switches 3065, an antenna 3066, and the like. Yes. In addition to the display portion 3064, the transistor manufactured by the present invention includes various integrated circuits such as various logic circuits, high-frequency circuits, memories, microprocessors, media processors, graphics LSIs, cryptographic LSIs, and mobile phone LSIs formed on glass. The mobile phone can be completed according to the present invention.
[0116]
In addition, the apparatus shown here is only an example and is not limited to these uses.
[0117]
【The invention's effect】
As described above, a linear stripe pattern having a concavo-convex shape is formed by an insulating film, an amorphous semiconductor film is deposited thereon, and crystallized through a molten state by irradiation with laser light to form a recess. By pouring and solidifying the semiconductor, strain or stress accompanying crystallization can be concentrated in a region other than the concave portion, and a region having poor crystallinity such as a crystal grain boundary can be selectively formed.
[0118]
Then, a semiconductor element such as a transistor, in particular, a location of a channel formation region thereof can be designated to form a crystalline semiconductor film having no crystal grain boundary. As a result, it is possible to eliminate a factor in which the characteristics vary due to inadvertently interposed crystal grain boundaries and crystal defects, and it is possible to form a transistor or a transistor element group having a small characteristic variation.
[0119]
Further, by forming the gate insulating film and the gate electrode so as to overlap with the side surface portion and the upper surface portion of the crystalline semiconductor film, the area of the channel formation region can be increased and the on-state current can be increased. Furthermore, by applying a gate voltage from three directions, carriers injected into the gate insulating film, particularly hot carriers, can be reduced, and the reliability of the transistor can be improved.
[Brief description of the drawings]
FIG. 1 is a perspective view for explaining a crystallization method according to the present invention and showing a step of forming a recess with an insulating film.
FIG. 2 is a perspective view for explaining a crystallization method of the present invention, showing a step of forming an amorphous semiconductor film over an insulating film having a recess.
FIG. 3 is a perspective view illustrating a crystallization method according to the present invention, and shows a stage in which a crystalline semiconductor film is formed over an insulating film in which a recess is formed.
FIG. 4 is a perspective view for explaining a crystallization method of the present invention, showing a stage in which a crystalline semiconductor film is left in a recess.
FIG. 5 is a vertical cross-sectional view illustrating details of the relationship between the shape of the opening in crystallization and the form of the crystalline semiconductor film.
FIG. 6 is a layout view showing one embodiment of a laser irradiation apparatus applied to the present invention.
FIGS. 7A and 7B are a top view and a vertical cross-sectional view illustrating a manufacturing process of a transistor manufactured according to the present invention. FIGS.
FIGS. 8A and 8B are a top view and a vertical cross-sectional view illustrating a manufacturing process of a transistor manufactured according to the present invention. FIGS.
FIGS. 9A and 9B are a top view and a vertical cross-sectional view illustrating a manufacturing process of a transistor manufactured according to the present invention. FIGS.
FIGS. 10A and 10B are a top view and a vertical cross-sectional view illustrating a manufacturing process of a transistor manufactured according to the present invention. FIGS.
FIGS. 11A and 11B are a top view and a vertical cross-sectional view illustrating a manufacturing process of a transistor manufactured according to the present invention. FIGS.
12A to 12C are a top view and a vertical cross-sectional view illustrating a manufacturing process of a transistor manufactured according to the present invention.
FIGS. 13A and 13B are a top view and a vertical cross-sectional view illustrating a manufacturing process of a transistor manufactured according to the present invention. FIGS.
FIGS. 14A and 14B are a top view and a vertical cross-sectional view illustrating a manufacturing process of a transistor manufactured according to the present invention. FIGS.
FIGS. 15A and 15B are a top view and a vertical cross-sectional view illustrating a manufacturing process of a transistor manufactured according to the present invention. FIGS.
FIG. 16 is a diagram for explaining linearly focused laser light and its scanning direction in the present invention.
FIG. 17 is a longitudinal sectional view showing an example of a gate structure which can be applied to a transistor manufactured according to the present invention.
FIG. 18 is an example of an external view of a semiconductor device manufactured using the present invention.
FIG. 19 is a top view illustrating a manufacturing process of a pixel portion of the semiconductor device illustrated in FIG. 18;
20 is a top view illustrating a manufacturing process of a pixel portion of the semiconductor device illustrated in FIG. 18;
FIG. 21 is a top view illustrating a manufacturing process of a pixel portion of the semiconductor device illustrated in FIG. 18;
22 is a top view illustrating a manufacturing process of a pixel portion of the semiconductor device illustrated in FIG. 18;
FIG. 23 is a top view illustrating a manufacturing process of a pixel portion of the semiconductor device illustrated in FIG. 18;
24 is a top view illustrating a structure of a pixel portion of the semiconductor device illustrated in FIG.
25 is a longitudinal sectional view illustrating a structure of a pixel portion corresponding to FIG.
FIG 26 is a vertical cross-sectional view illustrating details of a channel formation region of a transistor which is provided with a metal film and is manufactured according to the present invention.
FIG 27 is a vertical cross-sectional view illustrating details of a channel formation region of a transistor which is provided with a metal film and is manufactured according to the present invention.
FIG. 28 shows scanning electrons representing a surface state when a 150 nm amorphous silicon film is formed on a base insulating film provided with a step of 170 nm and a width and interval of convex portions of 0.5 μm and crystallized. Microscope (SEM) photograph (after Seco Etch).
FIG. 29 is a scanning electron showing a surface state when a 150 nm amorphous silicon film is formed on a base insulating film provided with a step of 170 nm and a width and interval of a 1.8 μm protrusion and crystallized. Microscope (SEM) photograph (after Seco Etch).
FIG. 30 is EBSP mapping data showing the orientation of crystals formed in the recesses.
FIG. 31 illustrates an example of a semiconductor device.

Claims (12)

A method for manufacturing a semiconductor device having a crystalline semiconductor film divided into island shapes,
Forming an insulating film provided with concave and convex portions extending in a linear stripe pattern on a substrate having an insulating surface;
In accordance with the arrangement of the crystalline semiconductor film divided into islands, after removing the protrusions of the insulating film intersecting with it, an amorphous semiconductor film is formed on the insulating film,
Forming the crystalline semiconductor film by melting and crystallizing the amorphous semiconductor film so that the molten semiconductor flows into the recess of the insulating film;
After removal of the crystalline semiconductor film remaining on the convex portions of the front Symbol insulating film, wherein the crystalline semiconductor film formed in the recess of the insulating film, forming a divided crystalline semiconductor film on the island,
A method for manufacturing a semiconductor device, comprising forming a gate insulating film and a gate electrode in contact with an upper surface portion of the island-shaped crystalline semiconductor film. A method for manufacturing a semiconductor device having a crystalline semiconductor film divided into island shapes,
Forming an insulating film provided with concave and convex portions extending in a linear stripe pattern on a substrate having an insulating surface;
In accordance with the arrangement of the crystalline semiconductor film divided into islands, after removing the protrusions of the insulating film intersecting with it, an amorphous semiconductor film is formed on the insulating film,
By irradiating laser light, the amorphous semiconductor film is melted and crystallized so as to flow the molten semiconductor into the recesses of the insulating film to form a crystalline semiconductor film,
After removing the crystalline semiconductor film remaining on the convex portion of the insulating film, a crystalline semiconductor film divided into islands is formed from the crystalline semiconductor film formed in the concave portion of the insulating film ,
A method for manufacturing a semiconductor device, comprising forming a gate insulating film and a gate electrode in contact with an upper surface portion of the island-shaped crystalline semiconductor film. A method for manufacturing a semiconductor device having a crystalline semiconductor film divided into island shapes,
Forming an insulating film provided with concave and convex portions extending in a linear stripe pattern on a substrate having an insulating surface;
In accordance with the arrangement of the crystalline semiconductor film divided into islands, after removing the protrusions of the insulating film intersecting with it, an amorphous semiconductor film is formed on the insulating film,
Irradiating a laser beam,且mallet Yaneru by scanning the length direction parallel to the direction, the insulating layer using the amorphous semiconductor film as pouring molten semiconductor in the recess melted by crystallizing of crystalline Forming a semiconductor film,
After removing the crystalline semiconductor film remaining on the convex portion of the insulating film, a crystalline semiconductor film divided into islands is formed from the crystalline semiconductor film formed in the concave portion of the insulating film ,
A method for manufacturing a semiconductor device, comprising forming a gate insulating film and a gate electrode in contact with an upper surface portion of the island-shaped crystalline semiconductor film. In claim 2 or claim 3 ,
A method for manufacturing a semiconductor device, wherein the laser light is irradiated with a continuous wave laser oscillation device as a light source. Forming an insulating film having a stripe pattern composed of linear concave and convex portions on the substrate;
Removing the protrusion of the insulating film disposed in the region where the crystalline semiconductor film divided into islands is formed;
Forming an amorphous semiconductor film so as to cover the insulating film;
A crystalline semiconductor film is formed by melting and crystallizing the amorphous semiconductor film,
Etching a part of the crystalline semiconductor film to expose the protrusions of the insulating film,
Wherein the crystalline semiconductor film provided in the recess of the insulating film is selectively removed to form a divided crystalline semiconductor film on the island,
A method for manufacturing a semiconductor device, wherein a gate electrode is formed over a crystalline semiconductor film divided into island shapes through a gate insulating film. Forming a metal layer containing one or more of W, Mo, Ti, Ta or Cr on the substrate;
Forming an insulating film having a stripe pattern composed of linear concave and convex portions on the metal layer;
Removing the protrusion of the insulating film disposed in the region where the crystalline semiconductor film divided into islands is formed;
Forming an amorphous semiconductor film so as to cover the insulating film;
A crystalline semiconductor film is formed by melting and crystallizing the amorphous semiconductor film,
Etching a part of the crystalline semiconductor film to expose the protrusions of the insulating film,
Wherein the crystalline semiconductor film provided in the recess of the insulating film is selectively removed to form a divided crystalline semiconductor film on the island,
A method for manufacturing a semiconductor device, wherein a gate electrode is formed over a crystalline semiconductor film divided into island shapes through a gate insulating film. Forming a metal layer containing one or more of W, Mo, Ti, Ta or Cr on the substrate;
Forming an insulating layer made of aluminum nitride or aluminum oxynitride on the metal layer;
Forming an insulating film having a stripe pattern composed of linear concave and convex portions on the insulating layer;
Removing the protrusion of the insulating film disposed in the region where the crystalline semiconductor film divided into islands is formed;
Forming an amorphous semiconductor film so as to cover the insulating film;
A crystalline semiconductor film is formed by melting and crystallizing the amorphous semiconductor film,
Etching a part of the crystalline semiconductor film to expose the protrusions of the insulating film,
Wherein the crystalline semiconductor film provided in the recess of the insulating film is selectively removed to form a divided crystalline semiconductor film on the island,
A method for manufacturing a semiconductor device, wherein a gate electrode is formed over a crystalline semiconductor film divided into island shapes through a gate insulating film. Forming a first insulating film on the substrate;
Forming a second insulating film on the first insulating film;
By removing a part of the second insulating film, a stripe pattern composed of linear concave and convex portions is formed,
Removing the second insulating film disposed in the region where the crystalline semiconductor film divided into islands is formed;
A third insulating film and an amorphous semiconductor film are continuously formed so as to cover the first insulating film and the second insulating film;
A crystalline semiconductor film is formed by melting and crystallizing the amorphous semiconductor film,
Etching a part of the crystalline semiconductor film to expose a third insulating film provided on the convex portion;
And selectively removing the crystalline semiconductor film provided in the recess to form a divided crystalline semiconductor film on the island,
A method for manufacturing a semiconductor device, wherein a gate electrode is formed over a crystalline semiconductor film divided into island shapes through a gate insulating film. Forming a first insulating film on the substrate;
Forming a metal layer containing one or more of W, Mo, Ti, Ta or Cr on the first insulating film;
Forming a second insulating film on the metal layer;
By removing a part of the second insulating film, a stripe pattern composed of linear concave and convex portions is formed,
Removing the second insulating film disposed in the region where the crystalline semiconductor film divided into islands is formed;
A third insulating film and an amorphous semiconductor film are continuously formed so as to cover the metal layer and the second insulating film;
A crystalline semiconductor film is formed by melting and crystallizing the amorphous semiconductor film,
Etching a part of the crystalline semiconductor film to expose a third insulating film provided on the convex portion;
And selectively removing the crystalline semiconductor film provided in the recess to form a divided crystalline semiconductor film on the island,
A method for manufacturing a semiconductor device, wherein a gate electrode is formed over a crystalline semiconductor film divided into island shapes through a gate insulating film. Forming a first insulating film on the substrate;
Forming a metal layer containing one or more of W, Mo, Ti, Ta or Cr on the first insulating film;
Forming an insulating layer made of aluminum nitride or aluminum oxynitride on the metal layer;
Forming a second insulating film on the insulating layer;
By removing a part of the second insulating film, a stripe pattern composed of linear concave and convex portions is formed,
Removing the second insulating film disposed in the region where the crystalline semiconductor film divided into islands is formed;
A third insulating film and an amorphous semiconductor film are continuously formed so as to cover the insulating layer and the second insulating film;
Wherein the crystalline semiconductor Motomaku formed by crystallization by melting amorphous semiconductor film,
Etching a part of the crystalline semiconductor film to expose a third insulating film provided on the convex portion;
And selectively removing the crystalline semiconductor film provided in the recess to form a divided crystalline semiconductor film on the island,
A method for manufacturing a semiconductor device, wherein a gate electrode is formed over a crystalline semiconductor film divided into island shapes through a gate insulating film. In any one of Claims 5 thru / or Claim 10 ,
The method for manufacturing a semiconductor device, wherein the amorphous semiconductor film is crystallized by irradiating laser light. In any one of Claims 1 thru | or 11 ,
A method for manufacturing a semiconductor device, wherein the recess has a width of 0.01 μm to 2 μm and a depth of 0.01 μm to 1 μm.

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