JP4106039B2 - ワイヤボンディング方法 - Google Patents
ワイヤボンディング方法 Download PDFInfo
- Publication number
- JP4106039B2 JP4106039B2 JP2004066541A JP2004066541A JP4106039B2 JP 4106039 B2 JP4106039 B2 JP 4106039B2 JP 2004066541 A JP2004066541 A JP 2004066541A JP 2004066541 A JP2004066541 A JP 2004066541A JP 4106039 B2 JP4106039 B2 JP 4106039B2
- Authority
- JP
- Japan
- Prior art keywords
- wire
- bond point
- capillary
- point
- bonding method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48095—Kinked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Wire Bonding (AREA)
Description
B 第2ボンド点
1 回路基板
2 電極パッド
3 ダイ
4 ワイヤ
5 キャピラリ
11 圧着ボール
21、22 屈折部
31 円弧部
32 水平部分
33 傾斜部
Claims (2)
- 第1ボンド点と第2ボンド点との間をワイヤで接続するワイヤボンディング方法において、第1ボンド点にワイヤの先端に形成されたボールを圧着して圧着ボールを形成する工程と、次にキャピラリを少し上昇させ、続いて第2ボンド点の方向に移動させ、その後キャピラリを前記上昇量より少ない量だけ下降させる工程と、次にキャピラリを上昇させてワイヤを繰り出し、キャピラリを第2ボンド点の方向に移動させてワイヤを第2ボンド点に接続する工程とを行うことを特徴とするワイヤボンディング方法。
- 第1ボンド点と第2ボンド点との間をワイヤで接続するワイヤボンディング方法において、第1ボンド点にワイヤの先端に形成されたボールを圧着して圧着ボールを形成する工程と、次にキャピラリを少し上昇させ、続いて第2ボンド点の方向に移動させ、その後キャピラリを前記上昇量より少ない量だけ下降させる工程と、次にキャピラリを上昇させ、続いてキャピラリを第2ボンド点と反対方向に移動させるリバース動作を少なくとも1回行う工程と、その後キャピラリを上昇させてワイヤを繰り出し、キャピラリを第2ボンド点の方向に移動させてワイヤを第2ボンド点に接続する工程とを行うことを特徴とするワイヤボンディング方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004066541A JP4106039B2 (ja) | 2003-06-27 | 2004-03-10 | ワイヤボンディング方法 |
US10/879,566 US7458498B2 (en) | 2003-06-27 | 2004-06-28 | Semiconductor device and a wire bonding method |
US11/582,627 US7617966B2 (en) | 2003-06-27 | 2006-10-16 | Semiconductor device |
US12/283,383 US7661576B2 (en) | 2003-06-27 | 2008-09-10 | Wire bonding method |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003183918 | 2003-06-27 | ||
JP2004066541A JP4106039B2 (ja) | 2003-06-27 | 2004-03-10 | ワイヤボンディング方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008029894A Division JP4879923B2 (ja) | 2003-06-27 | 2008-02-12 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005039192A JP2005039192A (ja) | 2005-02-10 |
JP4106039B2 true JP4106039B2 (ja) | 2008-06-25 |
Family
ID=33543536
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004066541A Expired - Fee Related JP4106039B2 (ja) | 2003-06-27 | 2004-03-10 | ワイヤボンディング方法 |
Country Status (2)
Country | Link |
---|---|
US (3) | US7458498B2 (ja) |
JP (1) | JP4106039B2 (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI263286B (en) * | 2004-02-06 | 2006-10-01 | Siliconware Precision Industries Co Ltd | Wire bonding method and semiconductor package using the method |
JP4534828B2 (ja) * | 2005-03-24 | 2010-09-01 | アイシン精機株式会社 | 車両用シート装置 |
KR101133123B1 (ko) | 2005-03-25 | 2012-04-06 | 삼성테크윈 주식회사 | 와이어 본딩 방법 및 그에 의한 반도체 패키지 |
US20070150033A1 (en) * | 2005-12-22 | 2007-06-28 | Cherlin Johnson | Cooling blanket |
JP2008235787A (ja) * | 2007-03-23 | 2008-10-02 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
WO2008117488A1 (ja) * | 2007-03-23 | 2008-10-02 | Sanyo Electric Co., Ltd | 半導体装置およびその製造方法 |
JP4361593B1 (ja) * | 2008-10-21 | 2009-11-11 | 株式会社新川 | ワイヤボンディング方法 |
JP4344002B1 (ja) | 2008-10-27 | 2009-10-14 | 株式会社新川 | ワイヤボンディング方法 |
KR100935854B1 (ko) | 2009-09-22 | 2010-01-08 | 테세라 리써치 엘엘씨 | 와이어 본딩 및 기준 와이어 본딩에 의해 제어되는 임피던스를 가진 마이크로전자 어셈블리 |
KR100950511B1 (ko) * | 2009-09-22 | 2010-03-30 | 테세라 리써치 엘엘씨 | 와이어 본딩 및 도전성 기준 소자에 의해 제어되는 임피던스를 포함하는 마이크로전자 어셈블리 |
JP4558832B2 (ja) * | 2009-06-05 | 2010-10-06 | 株式会社新川 | 半導体装置 |
JP4616924B2 (ja) * | 2009-10-30 | 2011-01-19 | 株式会社新川 | 半導体装置 |
KR101610827B1 (ko) | 2009-12-03 | 2016-04-08 | 삼성전자주식회사 | 본딩 구조물의 형성 방법 |
US8853708B2 (en) | 2010-09-16 | 2014-10-07 | Tessera, Inc. | Stacked multi-die packages with impedance control |
US8786083B2 (en) | 2010-09-16 | 2014-07-22 | Tessera, Inc. | Impedance controlled packages with metal sheet or 2-layer RDL |
US8581377B2 (en) | 2010-09-16 | 2013-11-12 | Tessera, Inc. | TSOP with impedance control |
US9136197B2 (en) | 2010-09-16 | 2015-09-15 | Tessera, Inc. | Impedence controlled packages with metal sheet or 2-layer RDL |
JP6519599B2 (ja) | 2017-01-27 | 2019-05-29 | 日亜化学工業株式会社 | 発光装置の製造方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6336269B1 (en) * | 1993-11-16 | 2002-01-08 | Benjamin N. Eldridge | Method of fabricating an interconnection element |
JP3333413B2 (ja) * | 1996-12-27 | 2002-10-15 | 株式会社新川 | ワイヤボンディング方法 |
JP3189115B2 (ja) | 1996-12-27 | 2001-07-16 | 株式会社新川 | 半導体装置及びワイヤボンディング方法 |
JPH1167809A (ja) * | 1997-08-26 | 1999-03-09 | Sanyo Electric Co Ltd | 半導体装置 |
JP3455092B2 (ja) * | 1997-10-27 | 2003-10-06 | 株式会社新川 | 半導体装置及びワイヤボンディング方法 |
EP0937530A1 (de) * | 1998-02-19 | 1999-08-25 | ESEC Management SA | Verfahren zum Herstellen von Drahtverbindungen an Halbleiterchips |
JP3377747B2 (ja) * | 1998-06-23 | 2003-02-17 | 株式会社新川 | ワイヤボンディング方法 |
JP2000114304A (ja) * | 1998-10-08 | 2000-04-21 | Shinkawa Ltd | ワイヤボンディング方法 |
JP3685779B2 (ja) * | 2002-08-27 | 2005-08-24 | 株式会社新川 | ワイヤボンディング方法、ワイヤボンディング装置及びワイヤボンディングプログラム |
US6815836B2 (en) * | 2003-03-24 | 2004-11-09 | Texas Instruments Incorporated | Wire bonding for thin semiconductor package |
US7494042B2 (en) * | 2003-10-02 | 2009-02-24 | Asm Technology Singapore Pte. Ltd. | Method of forming low wire loops and wire loops formed using the method |
US7214606B2 (en) * | 2004-03-11 | 2007-05-08 | Asm Technology Singapore Pte Ltd. | Method of fabricating a wire bond with multiple stitch bonds |
-
2004
- 2004-03-10 JP JP2004066541A patent/JP4106039B2/ja not_active Expired - Fee Related
- 2004-06-28 US US10/879,566 patent/US7458498B2/en active Active
-
2006
- 2006-10-16 US US11/582,627 patent/US7617966B2/en not_active Expired - Fee Related
-
2008
- 2008-09-10 US US12/283,383 patent/US7661576B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20090308914A1 (en) | 2009-12-17 |
US20040262369A1 (en) | 2004-12-30 |
US7661576B2 (en) | 2010-02-16 |
JP2005039192A (ja) | 2005-02-10 |
US7617966B2 (en) | 2009-11-17 |
US7458498B2 (en) | 2008-12-02 |
US20070034674A1 (en) | 2007-02-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4106039B2 (ja) | ワイヤボンディング方法 | |
JP4530975B2 (ja) | ワイヤボンディング方法 | |
US6715666B2 (en) | Wire bonding method, method of forming bump and bump | |
US20070029367A1 (en) | Semiconductor device | |
JP4298665B2 (ja) | ワイヤボンディング方法 | |
KR101286874B1 (ko) | 반도체 장치 및 그 제조 방법 | |
JP2004247672A (ja) | バンプ形成方法及びワイヤボンディング方法 | |
JP4021378B2 (ja) | ワイヤボンディング方法 | |
US6352197B1 (en) | Method and apparatus for wire-bonding for electric components | |
US20040164127A1 (en) | Wire bonding method | |
JP4105996B2 (ja) | ワイヤボンディング方法 | |
CN101604667B (zh) | 具有特殊结构的跨接导线的半导体布置结构及其制造方法 | |
JP4642047B2 (ja) | 半導体装置 | |
JP4879923B2 (ja) | 半導体装置 | |
US20170179065A1 (en) | Electrical interconnections for semiconductor devices and methods for forming the same | |
JP2005167178A (ja) | 半導体装置及びワイヤボンディング方法 | |
JP4547405B2 (ja) | ワイヤボンディング方法 | |
JP2006302963A (ja) | 半導体装置及び半導体装置の製造方法 | |
JP4369401B2 (ja) | ワイヤボンディング方法 | |
KR100718889B1 (ko) | 투스텝 하이 보틀넥을 갖는 와이어 본딩 캐필러리 | |
KR20020016083A (ko) | 반도체 패키지의 와이어 본딩방법 | |
JP2007150144A (ja) | 半導体装置およびその製造方法 | |
KR100660821B1 (ko) | 와이어본딩 방법 | |
JP2004319921A (ja) | ワイヤボンディング方法 | |
JP2000106381A (ja) | 半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060414 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20071225 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080115 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080212 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20080317 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20080328 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110404 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120404 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130404 Year of fee payment: 5 |
|
LAPS | Cancellation because of no payment of annual fees |