JP4160518B2 - 金属−セラミックス接合部材およびその製造方法 - Google Patents
金属−セラミックス接合部材およびその製造方法 Download PDFInfo
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- JP4160518B2 JP4160518B2 JP2004030139A JP2004030139A JP4160518B2 JP 4160518 B2 JP4160518 B2 JP 4160518B2 JP 2004030139 A JP2004030139 A JP 2004030139A JP 2004030139 A JP2004030139 A JP 2004030139A JP 4160518 B2 JP4160518 B2 JP 4160518B2
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- 239000000919 ceramic Substances 0.000 title claims description 70
- 238000004519 manufacturing process Methods 0.000 title claims description 31
- 238000007747 plating Methods 0.000 claims description 82
- 229910052751 metal Inorganic materials 0.000 claims description 56
- 239000002184 metal Substances 0.000 claims description 55
- 238000000034 method Methods 0.000 claims description 45
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 39
- 229910052725 zinc Inorganic materials 0.000 claims description 39
- 239000011701 zinc Substances 0.000 claims description 39
- 239000000243 solution Substances 0.000 claims description 31
- 238000005304 joining Methods 0.000 claims description 19
- 239000000126 substance Substances 0.000 claims description 17
- 239000003513 alkali Substances 0.000 claims description 15
- 238000001994 activation Methods 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 14
- 229910000838 Al alloy Inorganic materials 0.000 claims description 11
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 11
- 230000002378 acidificating effect Effects 0.000 claims description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 10
- 230000004913 activation Effects 0.000 claims description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 9
- 229910000521 B alloy Inorganic materials 0.000 claims description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 238000005498 polishing Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 229910001096 P alloy Inorganic materials 0.000 claims description 7
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 claims description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- -1 aluminum-silicon-boron Chemical compound 0.000 claims description 6
- 229910000676 Si alloy Inorganic materials 0.000 claims description 5
- 239000007864 aqueous solution Substances 0.000 claims description 5
- QDWJUBJKEHXSMT-UHFFFAOYSA-N boranylidynenickel Chemical compound [Ni]#B QDWJUBJKEHXSMT-UHFFFAOYSA-N 0.000 claims description 5
- 238000005238 degreasing Methods 0.000 claims description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims description 4
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- SNAAJJQQZSMGQD-UHFFFAOYSA-N aluminum magnesium Chemical compound [Mg].[Al] SNAAJJQQZSMGQD-UHFFFAOYSA-N 0.000 claims description 3
- 238000005219 brazing Methods 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 238000005470 impregnation Methods 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910000861 Mg alloy Inorganic materials 0.000 claims description 2
- 239000002131 composite material Substances 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 238000006467 substitution reaction Methods 0.000 description 26
- 229910000679 solder Inorganic materials 0.000 description 17
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- 239000003960 organic solvent Substances 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 238000007689 inspection Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000011592 zinc chloride Substances 0.000 description 2
- 235000005074 zinc chloride Nutrition 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910018134 Al-Mg Inorganic materials 0.000 description 1
- 229910018467 Al—Mg Inorganic materials 0.000 description 1
- 208000023514 Barrett esophagus Diseases 0.000 description 1
- 229910020816 Sn Pb Inorganic materials 0.000 description 1
- 229910020922 Sn-Pb Inorganic materials 0.000 description 1
- 229910008783 Sn—Pb Inorganic materials 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 150000003751 zinc Chemical class 0.000 description 1
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- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
- C23C18/1608—Process or apparatus coating on selected surface areas by direct patterning from pretreatment step, i.e. selective pre-treatment
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
- C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
- C23C18/1827—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment only one step pretreatment
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
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- H05K3/243—Reinforcing the conductive pattern characterised by selective plating, e.g. for finish plating of pads
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
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- C23C18/1689—After-treatment
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- H05K2201/03—Conductive materials
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- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0703—Plating
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- H05K2203/0786—Using an aqueous solution, e.g. for cleaning or during drilling of holes
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Description
図1〜図4に示すように、セラミックス基板10として41mm×35.5mm×0.635mmの大きさの窒化アルミニウム(AlN)基板を用意し(図1)、溶湯接合法により厚さ0.4mmの純アルミニウム板12をAlN基板10に接合して研磨した(図2)後、アルカリ剥離タイプのレジスト(三井化学(株)製のMT−UV−5203P)14を回路パターン形状にスクリーン印刷し(図3)、塩化鉄溶液により不要部分をエッチング除去して回路を形成した(図4)。
3%NaOH溶液によりレジスト16を溶解除去した後に80%の窒素と20%の水素を含むガス雰囲気下において280℃で熱処理した以外は実施例1と同様の方法により金属−セラミックス回路基板を作製した。このようにして得られた金属−セラミックス回路基板について、実施例1と同様にめっきの密着性および半田濡れ性の評価と外観検査を行ったところ、めっきの密着性および半田濡れ性が良好な所望のめっきパターンが得られ、外観も良好であった。
純アルミニウム板12の代わりにAl−0.5重量%Siからなる金属板を接合した以外は実施例2と同様の方法により金属−セラミックス回路基板を作製した。このようにして得られた金属−セラミックス回路基板について、実施例1と同様にめっきの密着性および半田濡れ性の評価と外観検査を行ったところ、めっきの密着性および半田濡れ性が良好な所望のめっきパターンが得られ、外観も良好であった。
アルカリ性の亜鉛置換液(上村工業(株)製のAZ−301−3X)の水溶液を使用した以外は実施例1と同様の方法により金属−セラミックス回路基板を作製した。このようにして得られた金属−セラミックス回路基板について、実施例1と同様にめっきの密着性および半田濡れ性の評価と外観検査を行ったところ、めっきの密着性および半田濡れ性は良好であったが、亜鉛置換工程でレジストが剥離して所望のめっきパターンが得られず、ほぼ全面にめっきが形成された。
レジスト16として有機溶剤剥離タイプのレジスト(太陽インキ製造(株)製のM−85K)を使用した以外は実施例1と同様の方法により金属−セラミックス回路基板を作製した。このようにして得られた金属−セラミックス回路基板について、実施例1と同様にめっきの密着性および半田濡れ性の評価と外観検査を行ったところ、めっきの密着性および半田濡れ性が良好であり、所望のめっきパターンが得られたが、レジストが残存していたため、Alワイヤーボンディングができなかった。
亜鉛置換液としてフッ化物を含有しない薬液(0.03重量%の塩酸の水溶液に1重量%の塩化亜鉛を溶解した薬液)を使用した以外は実施例1と同様の方法により金属−セラミックス回路基板を作製した。このようにして得られた金属−セラミックス回路基板について、実施例1と同様にめっきの密着性および半田濡れ性の評価と外観検査を行ったところ、めっきの密着性および半田濡れ性は良好であったが、外観にめっきムラが見られ、さらにレジストがあった部分の近傍に不めっきが見られた。
12 アルミニウム板
14 レジスト
16 レジスト
18 合金めっき
Claims (10)
- セラミックス部材にアルミニウムまたはアルミニウム合金からなる金属部材を接合した後、金属部材の不要部分をエッチングして金属回路板を形成し、この金属回路板の表面の所定の部分に無電解ニッケル合金めっきを施す、金属−セラミックス接合部材の製造方法において、セラミックス部材に接合した金属部材の表面に所定形状のアルカリ剥離タイプのレジストを付着させ、金属部材の不要部分をエッチング除去して金属回路板を形成し、この金属回路板の表面に付着したアルカリ剥離タイプのレジストを除去した後、所定形状のアルカリ剥離タイプのレジストを金属回路板の表面に付着させ、このレジストが付着していない金属回路板の表面の部分に対して、フッ化物または珪フッ化物を含有する酸性の亜鉛置換液により活性化処理を行い、無電解ニッケル合金めっきを施した後、レジストをアルカリで剥離することにより所定の形状のめっきを施すことを特徴とする、金属−セラミックス接合部材の製造方法。
- 前記アルミニウム合金が、アルミニウム−シリコン系合金、アルミニウム−マグネシウム系合金、アルミニウム−シリコン−ボロン系合金またはアルミニウム−マグネシウム−シリコン系合金であることを特徴とする、請求項1に記載の金属−セラミックス接合部材の製造方法。
- 前記活性化処理が、ダブルジンケート法による処理であることを特徴とする、請求項1または2に記載の金属−セラミックス接合部材の製造方法。
- 前記ダブルジンケート法による処理において、亜鉛置換膜除去液として、硝酸、塩酸、硫酸および酢酸の水溶液の少なくとも一つからなる酸性の水溶液を使用し、この亜鉛置換膜除去液により亜鉛置換膜を除去することを特徴とする、請求項3に記載の金属−セラミックス接合部材の製造方法。
- 前記セラミックス部材の主成分が、アルミナ、窒化アルミニウム、炭化珪素または窒化硅素であることを特徴とする、請求項1乃至4のいずれかに記載の金属−セラミックス接合部材の製造方法。
- 前記金属部材のセラミックス部材への接合が、溶湯接合法、含浸接合法、ろう材接合法または直接接合法によって行われることを特徴とする、請求項1乃至5のいずれかに記載の金属−セラミックス接合部材の製造方法。
- 前記無電解ニッケル合金めっきが、ニッケル−リン合金めっき、ニッケル−ホウ素合金めっき、またはニッケル−リン合金めっきとニッケル−ホウ素合金めっきの複合めっきであることを特徴とする、請求項1乃至6のいずれかに記載の金属−セラミックス接合部材の製造方法。
- 前記セラミックス部材がセラミックス基板であることを特徴とする、請求項1乃至7のいずれかに記載の金属−セラミックス接合部材の製造方法。
- 前記活性化処理の前に脱脂処理および化学研磨処理の少なくとも一方を行うことを特徴とする、請求項1乃至8のいずれかに記載の金属−セラミックス接合部材の製造方法。
- 請求項1乃至9のいずれかに記載の金属−セラミックス接合部材の製造方法により製造される金属−セラミックス接合部材。
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JP2004030139A JP4160518B2 (ja) | 2004-02-06 | 2004-02-06 | 金属−セラミックス接合部材およびその製造方法 |
US11/046,614 US20050175773A1 (en) | 2004-02-06 | 2005-01-28 | Metal/ceramic bonding member and method for producing same |
EP05001964A EP1562411B1 (en) | 2004-02-06 | 2005-01-31 | Metal/ceramic bonding member and method for producing same |
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EP1518847B1 (en) * | 2003-09-29 | 2013-08-28 | Dowa Metaltech Co., Ltd. | Aluminum/ceramic bonding substrate and method for producing same |
JP5102497B2 (ja) * | 2007-01-19 | 2012-12-19 | Dowaメタルテック株式会社 | 金属セラミックス接合回路基板の製造方法 |
JP5736945B2 (ja) * | 2011-05-12 | 2015-06-17 | トヨタ自動車株式会社 | 部分的にめっきをおこなう方法 |
CN103140094A (zh) * | 2011-11-24 | 2013-06-05 | 富准精密工业(深圳)有限公司 | 电子装置壳体及其制造方法 |
JP5675754B2 (ja) * | 2012-11-12 | 2015-02-25 | トヨタ自動車株式会社 | アルミニウム材料の部分めっき法 |
CN103805973A (zh) * | 2012-11-15 | 2014-05-21 | 青岛软控精工有限公司 | 镍磷合金镀液及乘用胎模具表面化学镀加工方法 |
KR101630382B1 (ko) * | 2015-04-16 | 2016-06-21 | 김동진 | 알루미늄을 기반으로 한 플렉시블피씨비의 동도금방법 |
US10529646B2 (en) | 2015-04-24 | 2020-01-07 | Amosense Co., Ltd. | Methods of manufacturing a ceramic substrate and ceramic substrates |
EP3321957B1 (en) * | 2015-07-09 | 2022-07-27 | Kabushiki Kaisha Toshiba | Ceramic metal circuit board and semiconductor device using same |
JP7048304B2 (ja) | 2017-12-22 | 2022-04-05 | 上村工業株式会社 | 耐熱用パワーモジュール基板及び耐熱用めっき皮膜 |
CN109136892A (zh) * | 2018-10-13 | 2019-01-04 | 娄底市安地亚斯电子陶瓷有限公司 | 一种陶瓷壳体挂镀化学镍的方法 |
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US3969199A (en) * | 1975-07-07 | 1976-07-13 | Gould Inc. | Coating aluminum with a strippable copper deposit |
JPS58187260A (ja) * | 1982-04-26 | 1983-11-01 | Mitsubishi Electric Corp | アルミニウム金属への半田被着法 |
JPH03267377A (ja) * | 1990-03-16 | 1991-11-28 | Seiko Instr Inc | アルミニウムの表面処理方法 |
JPH0738232A (ja) * | 1993-07-22 | 1995-02-07 | Asahi Chem Ind Co Ltd | 印刷回路パターンの形成方法 |
JPH07224387A (ja) * | 1994-02-15 | 1995-08-22 | Nkk Corp | りん酸亜鉛処理性に優れたZn系めっきアルミニウム板 の製造方法 |
US5965193A (en) * | 1994-04-11 | 1999-10-12 | Dowa Mining Co., Ltd. | Process for preparing a ceramic electronic circuit board and process for preparing aluminum or aluminum alloy bonded ceramic material |
JP3933342B2 (ja) * | 1999-04-05 | 2007-06-20 | 東洋アルミニウム株式会社 | 二次電池の集電体用金属箔および二次電池用集電体 |
DE60107500T2 (de) * | 2000-06-23 | 2005-04-07 | Toyo Aluminium K.K. | Antennenspule für Chipkarten und Herstellungsverfahren |
JP2003013246A (ja) * | 2001-07-02 | 2003-01-15 | Fuji Electric Co Ltd | 半導体装置の電極の製造方法 |
JP3795354B2 (ja) * | 2001-07-19 | 2006-07-12 | 同和鉱業株式会社 | 金属−セラミックス接合基板の製造方法 |
JP3949505B2 (ja) * | 2002-04-26 | 2007-07-25 | シャープ株式会社 | 接続端子及びその製造方法並びに半導体装置及びその製造方法 |
US6790265B2 (en) * | 2002-10-07 | 2004-09-14 | Atotech Deutschland Gmbh | Aqueous alkaline zincate solutions and methods |
US20040149689A1 (en) * | 2002-12-03 | 2004-08-05 | Xiao-Shan Ning | Method for producing metal/ceramic bonding substrate |
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