JP3882625B2 - Sound insulation wall and cleaning method for sound insulation wall - Google Patents
Sound insulation wall and cleaning method for sound insulation wall Download PDFInfo
- Publication number
- JP3882625B2 JP3882625B2 JP2002020533A JP2002020533A JP3882625B2 JP 3882625 B2 JP3882625 B2 JP 3882625B2 JP 2002020533 A JP2002020533 A JP 2002020533A JP 2002020533 A JP2002020533 A JP 2002020533A JP 3882625 B2 JP3882625 B2 JP 3882625B2
- Authority
- JP
- Japan
- Prior art keywords
- sound insulation
- insulation wall
- photocatalyst
- layer
- railway
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 238000009413 insulation Methods 0.000 title claims description 43
- 238000000034 method Methods 0.000 title claims description 10
- 238000004140 cleaning Methods 0.000 title claims description 6
- 239000011941 photocatalyst Substances 0.000 claims description 43
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 31
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 18
- 125000000962 organic group Chemical group 0.000 claims description 15
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 10
- 229920001296 polysiloxane Polymers 0.000 claims description 9
- 239000000356 contaminant Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 6
- 230000002209 hydrophobic effect Effects 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 230000009471 action Effects 0.000 claims description 4
- 229910052741 iridium Inorganic materials 0.000 claims description 4
- 229910052762 osmium Inorganic materials 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052703 rhodium Inorganic materials 0.000 claims description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 3
- 230000005855 radiation Effects 0.000 claims description 2
- 238000005406 washing Methods 0.000 claims description 2
- 238000000576 coating method Methods 0.000 description 26
- 239000011248 coating agent Substances 0.000 description 25
- 239000010410 layer Substances 0.000 description 21
- 125000000524 functional group Chemical group 0.000 description 12
- 150000004756 silanes Chemical class 0.000 description 12
- 230000000694 effects Effects 0.000 description 11
- 239000002344 surface layer Substances 0.000 description 9
- 239000000428 dust Substances 0.000 description 8
- 125000003545 alkoxy group Chemical group 0.000 description 7
- 125000005843 halogen group Chemical group 0.000 description 7
- 239000008199 coating composition Substances 0.000 description 6
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 6
- 230000018044 dehydration Effects 0.000 description 5
- 238000006297 dehydration reaction Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000012643 polycondensation polymerization Methods 0.000 description 5
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- 238000006460 hydrolysis reaction Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000001443 photoexcitation Effects 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000001723 curing Methods 0.000 description 3
- VGWJKDPTLUDSJT-UHFFFAOYSA-N diethyl dimethyl silicate Chemical compound CCO[Si](OC)(OC)OCC VGWJKDPTLUDSJT-UHFFFAOYSA-N 0.000 description 3
- 239000003344 environmental pollutant Substances 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 229920000578 graft copolymer Polymers 0.000 description 3
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- 231100000719 pollutant Toxicity 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- UQMOLLPKNHFRAC-UHFFFAOYSA-N tetrabutyl silicate Chemical compound CCCCO[Si](OCCCC)(OCCCC)OCCCC UQMOLLPKNHFRAC-UHFFFAOYSA-N 0.000 description 3
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 3
- KBQVDAIIQCXKPI-UHFFFAOYSA-N 3-trimethoxysilylpropyl prop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C=C KBQVDAIIQCXKPI-UHFFFAOYSA-N 0.000 description 2
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 229910002367 SrTiO Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- YSALUHGLIBYTET-UHFFFAOYSA-N benzyl(dibutoxy)silane Chemical compound CCCCO[SiH](OCCCC)CC1=CC=CC=C1 YSALUHGLIBYTET-UHFFFAOYSA-N 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000004927 clay Substances 0.000 description 2
- 238000002485 combustion reaction Methods 0.000 description 2
- 239000002772 conduction electron Substances 0.000 description 2
- MGQFVQQCNPBJKC-UHFFFAOYSA-N dibutoxy(diethyl)silane Chemical compound CCCCO[Si](CC)(CC)OCCCC MGQFVQQCNPBJKC-UHFFFAOYSA-N 0.000 description 2
- GQNWJCQWBFHQAO-UHFFFAOYSA-N dibutoxy(dimethyl)silane Chemical compound CCCCO[Si](C)(C)OCCCC GQNWJCQWBFHQAO-UHFFFAOYSA-N 0.000 description 2
- ZMAPKOCENOWQRE-UHFFFAOYSA-N diethoxy(diethyl)silane Chemical compound CCO[Si](CC)(CC)OCC ZMAPKOCENOWQRE-UHFFFAOYSA-N 0.000 description 2
- MNFGEHQPOWJJBH-UHFFFAOYSA-N diethoxy-methyl-phenylsilane Chemical compound CCO[Si](C)(OCC)C1=CC=CC=C1 MNFGEHQPOWJJBH-UHFFFAOYSA-N 0.000 description 2
- VSYLGGHSEIWGJV-UHFFFAOYSA-N diethyl(dimethoxy)silane Chemical compound CC[Si](CC)(OC)OC VSYLGGHSEIWGJV-UHFFFAOYSA-N 0.000 description 2
- BZCJJERBERAQKQ-UHFFFAOYSA-N diethyl(dipropoxy)silane Chemical compound CCCO[Si](CC)(CC)OCCC BZCJJERBERAQKQ-UHFFFAOYSA-N 0.000 description 2
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 2
- CVQVSVBUMVSJES-UHFFFAOYSA-N dimethoxy-methyl-phenylsilane Chemical compound CO[Si](C)(OC)C1=CC=CC=C1 CVQVSVBUMVSJES-UHFFFAOYSA-N 0.000 description 2
- ZIDTUTFKRRXWTK-UHFFFAOYSA-N dimethyl(dipropoxy)silane Chemical compound CCCO[Si](C)(C)OCCC ZIDTUTFKRRXWTK-UHFFFAOYSA-N 0.000 description 2
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 description 2
- 238000003618 dip coating Methods 0.000 description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 description 2
- KUCGHDUQOVVQED-UHFFFAOYSA-N ethyl(tripropoxy)silane Chemical compound CCCO[Si](CC)(OCCC)OCCC KUCGHDUQOVVQED-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- RJMRIDVWCWSWFR-UHFFFAOYSA-N methyl(tripropoxy)silane Chemical compound CCCO[Si](C)(OCCC)OCCC RJMRIDVWCWSWFR-UHFFFAOYSA-N 0.000 description 2
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 2
- FABOKLHQXVRECE-UHFFFAOYSA-N phenyl(tripropoxy)silane Chemical compound CCCO[Si](OCCC)(OCCC)C1=CC=CC=C1 FABOKLHQXVRECE-UHFFFAOYSA-N 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 230000003405 preventing effect Effects 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- ZQZCOBSUOFHDEE-UHFFFAOYSA-N tetrapropyl silicate Chemical compound CCCO[Si](OCCC)(OCCC)OCCC ZQZCOBSUOFHDEE-UHFFFAOYSA-N 0.000 description 2
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 2
- GIHPVQDFBJMUAO-UHFFFAOYSA-N tributoxy(ethyl)silane Chemical compound CCCCO[Si](CC)(OCCCC)OCCCC GIHPVQDFBJMUAO-UHFFFAOYSA-N 0.000 description 2
- GYZQBXUDWTVJDF-UHFFFAOYSA-N tributoxy(methyl)silane Chemical compound CCCCO[Si](C)(OCCCC)OCCCC GYZQBXUDWTVJDF-UHFFFAOYSA-N 0.000 description 2
- INUOIYMEJLOQFN-UHFFFAOYSA-N tributoxy(phenyl)silane Chemical compound CCCCO[Si](OCCCC)(OCCCC)C1=CC=CC=C1 INUOIYMEJLOQFN-UHFFFAOYSA-N 0.000 description 2
- WAAWAIHPWOJHJJ-UHFFFAOYSA-N tributoxy(propyl)silane Chemical compound CCCCO[Si](CCC)(OCCCC)OCCCC WAAWAIHPWOJHJJ-UHFFFAOYSA-N 0.000 description 2
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 description 2
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 2
- JCVQKRGIASEUKR-UHFFFAOYSA-N triethoxy(phenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC=C1 JCVQKRGIASEUKR-UHFFFAOYSA-N 0.000 description 2
- NBXZNTLFQLUFES-UHFFFAOYSA-N triethoxy(propyl)silane Chemical compound CCC[Si](OCC)(OCC)OCC NBXZNTLFQLUFES-UHFFFAOYSA-N 0.000 description 2
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 2
- HQYALQRYBUJWDH-UHFFFAOYSA-N trimethoxy(propyl)silane Chemical compound CCC[Si](OC)(OC)OC HQYALQRYBUJWDH-UHFFFAOYSA-N 0.000 description 2
- VUWVDNLZJXLQPT-UHFFFAOYSA-N tripropoxy(propyl)silane Chemical compound CCCO[Si](CCC)(OCCC)OCCC VUWVDNLZJXLQPT-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- BMVXCPBXGZKUPN-UHFFFAOYSA-N 1-hexanamine Chemical compound CCCCCCN BMVXCPBXGZKUPN-UHFFFAOYSA-N 0.000 description 1
- 241000894006 Bacteria Species 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- SMZOGRDCAXLAAR-UHFFFAOYSA-N aluminium isopropoxide Chemical compound [Al+3].CC(C)[O-].CC(C)[O-].CC(C)[O-] SMZOGRDCAXLAAR-UHFFFAOYSA-N 0.000 description 1
- 230000003373 anti-fouling effect Effects 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 150000007514 bases Chemical class 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002734 clay mineral Substances 0.000 description 1
- 239000004567 concrete Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
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- 230000001788 irregular Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 235000019645 odor Nutrition 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000001699 photocatalysis Effects 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- ZMYXZXUHYAGGKG-UHFFFAOYSA-N propoxysilane Chemical compound CCCO[SiH3] ZMYXZXUHYAGGKG-UHFFFAOYSA-N 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000012686 silicon precursor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- 239000003981 vehicle Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F13/00—Arrangements for modifying heat-transfer, e.g. increasing, decreasing
- F28F13/18—Arrangements for modifying heat-transfer, e.g. increasing, decreasing by applying coatings, e.g. radiation-absorbing, radiation-reflecting; by surface treatment, e.g. polishing
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24F—AIR-CONDITIONING; AIR-HUMIDIFICATION; VENTILATION; USE OF AIR CURRENTS FOR SCREENING
- F24F8/00—Treatment, e.g. purification, of air supplied to human living or working spaces otherwise than by heating, cooling, humidifying or drying
- F24F8/20—Treatment, e.g. purification, of air supplied to human living or working spaces otherwise than by heating, cooling, humidifying or drying by sterilisation
- F24F8/22—Treatment, e.g. purification, of air supplied to human living or working spaces otherwise than by heating, cooling, humidifying or drying by sterilisation using UV light
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F2245/00—Coatings; Surface treatments
- F28F2245/02—Coatings; Surface treatments hydrophilic
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Combustion & Propulsion (AREA)
- Paints Or Removers (AREA)
- Devices Affording Protection Of Roads Or Walls For Sound Insulation (AREA)
- Surface Treatment Of Glass (AREA)
Description
【0001】
【発明の属する技術分野】
本発明は、表面を水を用いて清浄化することの可能な塗膜を形成した道路又は鉄道の遮音壁に関する。
【0002】
【従来の技術】
建築及び塗料の分野においては、環境汚染に伴い、建築外装材料や屋外建造物やその塗膜の汚れが問題となっている。大気中に浮遊する煤塵や粒子は晴天には建物の屋根や外壁に堆積する。堆積物は降雨に伴い雨水により流され、建物の外壁を流下する。更に、雨天には浮遊煤塵は雨によって持ち運ばれ、建物の外壁や屋外建造物の表面を流下する。その結果、表面には、雨水の道筋に沿って汚染物質が付着する。表面が乾燥すると、表面には縞状の汚れが現れる。建築外装材料や塗膜の汚れは、カ−ボンブラックのような燃焼生成物や、都市煤塵や粘土粒子のような無機質物質の汚染物質からなる。このような汚染物質の多様性が防汚対策を複雑にしているものと考えられる(橘高義典著“外壁仕上材料の汚染の促進試験方法”、日本建築学会構造系論文報告集、第404号、1989年10月、p.15−24)。従来の通念では、上記建築外装などの汚れを防止するためにはポリテトラフルオロエチレン(PTFE)のような撥水性の塗料が好ましいと考えられていたが、最近では、疎水性成分を多く含む都市煤塵に対しては、塗膜の表面を出来るだけ親水性にするのがよいと考えられている(高分子、44巻、1995年5月号、p.307)。そこで、親水性のグラフトポリマ−で建物を塗装することが提案されている(新聞“化学工業日報”、1995年1月30日)。報告によれば、この塗膜は水との接触角に換算して30〜40゜の親水性を呈する。しかしながら、粘土鉱物で代表される無機質塵埃の水との接触角は20゜から50゜であり、水との接触角が30〜40゜のグラフトポリマ−に対して親和性を有し、その表面に付着しやすいので、このグラフトポリマ−の塗膜は無機質塵埃による汚れを防止することができないと考えられる。
【0003】
【発明が解決しようとする課題】
本発明の目的は、表面を高度に親水化することにより、表面が汚れるのを防止し、又は表面を水を用いて清浄化することの可能な塗膜を形成するための、保存安定性に優れた道路又は鉄道の遮音壁を提供することである。
【0004】
【課題を解決するための手段】
本発明は、光触媒を含有する表面層を形成した部材において、光触媒を光励起すると、部材の表面が高度に親水化されるという発見に基づく。この現象は以下に示す機構により進行すると考えられる。すなわち、光触媒の価電子帯上端と伝導帯下端とのエネルギ−ギャップ以上のエネルギ−を有する光が光触媒に照射されると、光触媒の価電子帯中の電子が励起されて伝導電子と正孔が生成し、そのいずれかまたは双方の作用により、表面に極性が付与される。それにより、表面に、水が化学吸着し、さらに、その上に物理吸着水層が形成され増加する。それにより、表面が水濡れ角10゜以下の高度の親水性を呈するようになる。
【0005】
本発明に係る道路又は鉄道の遮音壁は、表面を半導体光触媒含有層で被覆してなり、前記光触媒含有層は光触媒の粒子が分散されたシリコーンによって形成されており、前記光触媒含有層のシリコーン分子のケイ素原子に結合した有機基が光触媒の作用により少なくとも部分的に水酸基に置換されたシリコーン誘導体で形成されており、前記光触媒が太陽光によって光励起されるに応じて前記層の表面がは水との接触角が10°以下に親水化され、もって、疎水性の汚染物質が遮音壁の表面に付着するのが防止され、若しくは、遮音壁が降雨にさらされた時に遮音壁の表面に付着した汚れが雨水により洗い流される構成とした。
【0006】
また、本発明に係る道路又は鉄道の遮音壁は、表面を半導体光触媒含有層で被覆してなり、前記光触媒含有層はTiO2、ZnO、SnO2、SrTiO3、WO3、Bi2O3、Fe2O3からなる群から選ばれた1種の光触媒を含み、前記光触媒含有層は、更に、Pt、Pd、Rh、Ru、Os、Irからなる群から選ばれた1種の金属を含み、前記光触媒が太陽光によって光励起されるに応じて前記層の表面が親水化され、もって、疎水性の汚染物質が遮音壁の表面に付着するのが防止され、若しくは、遮音壁が降雨にさらされた時に遮音壁の表面に付着した汚れが雨水により洗い流される構成とした。
【0007】
前記遮音壁の少なくとも一部を透明な材料とし、前記光触媒含有層を透明とする構成が考えられ、光触媒含有層はTiO2、ZnO、SnO2、SrTiO3、WO3、Bi2O3、Fe2O3からなる群から選ばれた1種の光触媒を含み、より具体的にはアナターゼ型チタニアとすることができる。
また、前記光触媒含有層は、更に、Pt、Pd、Rh、Ru、Os、Irからなる群から選ばれた1種の金属を含むようにしてもよい。
【0008】
また、本発明に係る道路又は鉄道の遮音壁の洗浄方法は、半導体光触媒含有層によって被覆された遮音壁を道路又は鉄道の側部に設置し、前記遮音壁を太陽の照射にさらすことにより太陽光によって光触媒を励起させて前記層の表面を親水化させ、前記遮音壁を降雨にさらすことにより前記層の表面に付着した汚れを雨水により洗い流させるようにした。
【0009】
本発明に係る道路又は鉄道の遮音壁の他の洗浄方法は、半導体光触媒含有層によって被覆された遮音壁を道路又は鉄道の側部に設置し、前記遮音壁を太陽の照射にさらすことにより太陽光によって光触媒を励起させて前記層の表面を親水化させ、前記層の表面に水を供給することにより前記層の表面に付着した汚染物質を洗い流すようにした。
【0010】
前記水の供給は例えば遮音壁に水を噴射することにより行い、前記水の噴射は例えば走行中の作業車から行う。
【0011】
【発明の実施の形態】
本発明に係る道路用または鉄道用遮音壁として適用可能な基材としては、防曇効果を期待する場合には透明な部材であり、その材質はガラス、プラスチック等が好適に利用でき、表面清浄化効果を期待する場合にはその材質は、例えば、金属、セラミック、ガラス、プラスチック、木、石、セメント、コンクリ−ト、繊維、布帛、それらの組合せ、それらの積層体が好適に利用できる。
【0012】
前記道路用または鉄道用遮音壁の表面は、半導体光触媒含有層で被覆され、光触媒含有層は光触媒の粒子が分散されたシリコーンによって形成され、光触媒含有層のシリコーン分子のケイ素原子に結合した有機基が光触媒の作用により少なくとも部分的に水酸基に置換されたシリコーン誘導体で形成されている。
【0013】
本発明において、光触媒性酸化チタンとは、その結晶の伝導帯と価電子帯との間のエネルギ−ギャップよりも大きなエネルギ−(すなわち短い波長)の光(励起光)を照射したときに、価電子帯中の電子の励起(光励起)が生じて、伝導電子と正孔を生成しうる酸化チタンをいい、例えば、アナタ−ゼ型酸化チタン、ルチル型酸化チタン等の結晶性酸化チタンが好適に利用できる。本発明における高度の親水性とは、水との接触角に換算して10゜以下、好ましくは5゜以下の水濡れ性を呈する状態をいう。
【0014】
またシリコ−ンは、平均組成式RpSiO(4-p)/2(式中、Rは一価の有機基の1種若しくは2種以上からなる官能基、又は、一価の有機基と水素基から選ばれた2種以上からなる官能基であり、Xはアルコキシ基、又は、ハロゲン原子であり、pは0<p<2を満足する数である)で表される樹脂である。この樹脂は後述するシリコ−ンの前駆体を部分的に加水分解、脱水縮重合することにより得ることができる。
【0015】
ここでシリコ−ンの前駆体としては、平均組成式RpSiXqO(4-p-q)/2(式中、Rは一価の有機基の1種若しくは2種以上からなる官能基、又は、一価の有機基と水素基から選ばれた2種以上からなる官能基であり、Xはアルコキシ基、又は、ハロゲン原子であり、p及びqは0<p<2、0<q<4を満足する数である)で表されるシロキサンからなる塗膜形成要素、又は一般式RpSiX4-p(式中、Rは一価の有機基の1種若しくは2種以上からなる官能基、又は、一価の有機基と水素基から選ばれた2種以上からなる官能基であり、Xはアルコキシ基、又は、ハロゲン原子であり、pは1または2である)で表される加水分解性シラン誘導体からなる塗膜形成要素、が好適に利用できる。
【0016】
ここで上記加水分解性シラン誘導体からなる塗膜形成要素としては、メチルトリメトキシシラン、メチルトリエトキシシラン、メチルトリプロポキシシラン、メチルトリブトキシシラン、エチルトリメトキシシラン、エチルトリエトキシシラン、エチルトリプロポキシシラン、エチルトリブトキシシラン、フェニルトリメトキシシラン、フェニルトリエトキシシラン、フェニルトリプロポキシシラン、フェニルトリブトキシシラン、ジメチルジメトキシシラン、ジメチルジエトキシシラン、ジメチルジプロポキシシラン、ジメチルジブトキシシラン、ジエチルジメトキシシラン、ジエチルジエトキシシラン、ジエチルジプロポキシシラン、ジエチルジブトキシシラン、フェニルメチルジメトキシシラン、フェニルメチルジエトキシシラン、フェニルメチルジプロポキシシラン、フェニルメチルジブトキシシラン、n−プロピルトリメトキシシラン、n−プロピルトリエトキシシラン、n−プロピルトリプロポキシシラン、n−プロピルトリブトキシシラン、γ−グリコキシドキシプロピルトリメトキシシラン、γ−アクリロキシプロピルトリメトキシシラン等が好適に利用できる。
【0017】
また、上記シロキサンからなる塗膜形成要素としては、上記加水分解性シラン誘導体の部分加水分解及び脱水縮重合、又は上記加水分解性シラン誘導体の部分加水分解物と、テトラメトキシシラン、テトラエトキシシラン、テトラプロポキシシラン、テトラブトキシシラン、ジエトキシジメトキシシラン等の部分加水分解物との脱水縮重合等で作製することができる。
【0018】
加水分解性シラン誘導体は、一般式RpSiX4-p(式中、Rは一価の有機基の1種若しくは2種以上からなる官能基、又は、一価の有機基と水素基から選ばれた2種以上からなる官能基であり、Xはアルコキシ基、又は、ハロゲン原子であり、pは1または2である)で表される加水分解性シラン誘導体である。
【0019】
ここで上記加水分解性シラン誘導体としては、メチルトリメトキシシラン、メチルトリエトキシシラン、メチルトリプロポキシシラン、メチルトリブトキシシラン、エチルトリメトキシシラン、エチルトリエトキシシラン、エチルトリプロポキシシラン、エチルトリブトキシシラン、フェニルトリメトキシシラン、フェニルトリエトキシシラン、フェニルトリプロポキシシラン、フェニルトリブトキシシラン、ジメチルジメトキシシラン、ジメチルジエトキシシラン、ジメチルジプロポキシシラン、ジメチルジブトキシシラン、ジエチルジメトキシシラン、ジエチルジエトキシシラン、ジエチルジプロポキシシラン、ジエチルジブトキシシラン、フェニルメチルジメトキシシラン、フェニルメチルジエトキシシラン、フェニルメチルジプロポキシシラン、フェニルメチルジブトキシシラン、n−プロピルトリメトキシシラン、n−プロピルトリエトキシシラン、n−プロピルトリプロポキシシラン、n−プロピルトリブトキシシラン、γ−グリコキシドキシプロピルトリメトキシシラン、γ−アクリロキシプロピルトリメトキシシラン等が好適に利用できる。
【0020】
酸化チタンを被覆するシロキサンオリゴマ−は、平均組成式RpSiXqO(4-p-q)/2(式中、Rは一価の有機基の1種若しくは2種以上からなる官能基、又は、一価の有機基と水素基から選ばれた2種以上からなる官能基であり、Xはアルコキシ基、又は、ハロゲン原子であり、p及びqは0<p<2、0<q<4を満足する数である)で表されるシロキサンオリゴマ−であり、上記加水分解性シラン誘導体の部分加水分解及び脱水縮重合、又は上記加水分解性シラン誘導体の部分加水分解物と、テトラメトキシシラン、テトラエトキシシラン、テトラプロポキシシラン、テトラブトキシシラン、ジエトキシジメトキシシラン等の部分加水分解物との脱水縮重合等で作製することができる加水分解性シラン誘導体の2〜10量体をいう。
【0021】
酸化チタンを被覆する4官能加水分解性シラン誘導体は、一般式SiX4(式中、Rは一価の有機基の1種若しくは2種以上からなる官能基、又は、一価の有機基と水素基から選ばれた2種以上からなる官能基であり、Xはアルコキシ基、又は、ハロゲン原子である)で表される4官能加水分解性シラン誘導体である。
【0022】
ここで上記4官能加水分解性シラン誘導体としては、テトラメトキシシラン、テトラエトキシシラン、テトラプロポキシシラン、テトラブトキシシラン、ジエトキシジメトキシシラン等が好適に利用できる。
【0023】
酸化チタンを被覆するシリケ−トオリゴマ−は、平均組成式SiXqO(4-q)/2(式中、Xはアルコキシ基、又は、ハロゲン原子であり、qは0<q<4を満足する数である)で表されるシリケ−トオリゴマ−であり、上記4官能加水分解性シラン誘導体の部分加水分解及び脱水縮重合等で作製することができる4官能加水分解性シランの2〜10量体をいう。
【0024】
酸化チタン粒子への上記被覆物の固定方法は、例えば、スプレ−コ−ティング法、ディップコ−ティング法、フロ−コ−ティング法、スピンコ−ティング法、ロ−ルコ−ティング法、刷毛塗り、スポンジ塗り等の方法で被覆後、熱処理等の方法で固定する。
【0025】
コ−ティング組成物には、Ag、Cu、Znのような金属を添加することができる。前記金属を添加した場合、塗膜により形成される表面層は、表面に付着した細菌や黴を暗所でも死滅させることができる。
【0026】
コ−ティング組成物には、Pt、Pd、Ru、Rh、Ir、Osのような白金族金属を添加することができる。前記金属を添加した場合、塗膜により形成される表面層は、光触媒の酸化還元活性を増強でき、有機物汚れの分解性、有害気体や悪臭の分解性を向上させることができる。
【0027】
コ−ティング組成物は、その他に水、エタノ−ル、プロパノ−ル等の溶媒や、塩酸、硝酸、硫酸、酢酸、マレイン酸等のシリコ−ンの前駆体の加水分解を促進する触媒や、トリブチルアミン、ヘキシルアミンなどの塩基性化合物類、アルミニウムトリイソプロポキシド、テトライソプロピルチタネ−トなどの酸性化合物類等のシリコ−ンの前駆体を硬化させる触媒や、シランカップリング剤等のコ−ティング液の分散性を向上させる界面活性剤などを添加してもよい。
【0028】
上記コ−ティング組成物の利用方法は、基本的には、道路又は鉄道の遮音壁の壁面表面にコ−ティング組成物を塗布し、硬化させて塗膜を形成する。
【0029】
上記コ−ティング組成物の塗布方法としては、スプレ−コ−ティング法、ディップコ−ティング法、フロ−コ−ティング法、スピンコ−ティング法、ロ−ルコ−ティング法、刷毛塗り、スポンジ塗り等の方法が好適に利用できる。硬化方法としては、熱処理、室温放置、紫外線照射等により重合させて行うことができる
。
【0030】
上記方法で遮音壁表面に塗膜を形成すると、壁面表面は光触媒の光励起に応じて親水性を呈するようになる。ここで、光触媒の光励起により、基材表面が高度に親水化されるためには、励起光の照度は0.001mW/cm2以上あればよいが、0.01mW/cm2以上だと好ましく、0.1mW/cm2以上だとより好ましい。光触媒の光励起に用いる光源としては、太陽光、室内照明、蛍光灯、水銀灯、白熱電灯、キセノンランプ、高圧ナトリウムランプ、メタルハライドランプ、BLBランプ等が好適に利用できる。
【0031】
遮音壁表面に塗膜により形成される表面層の膜厚は、0.4μm以下にするのが好ましい。そうすれば、光の乱反射による白濁を防止することができ、表面層は実質的に透明となる。さらに、表面層の膜厚を、0.2μm以下にすると一層好ましい。そうすれば、光の干渉による表面層の発色を防止することができる。また、表面層が薄ければ薄いほどその透明度は向上する。更に、膜厚を薄くすれば、表面層の耐摩耗性が向上する。
【0032】
【発明の効果】
本発明に係る道路又は鉄道の遮音壁によれば、遮音壁表面が水との接触角に換算して10゜以下の状態になることで、空気中の湿分や湯気が結露しても、凝縮水が個々の水滴を形成せずに一様な水膜になる傾向が顕著になる。従って、表面に光散乱性の曇りを生じない傾向が顕著になる。
また、同様に、遮音壁表面が水との接触角に換算して10゜以下、好ましくは5゜以下の状態であれば、都市煤塵、自動車等の排気ガスに含有されるカ−ボンブラック等の燃焼生成物、油脂、シ−ラント溶出成分等の疎水性汚染物質、及び無機粘土質汚染物質双方が付着しにくく、付着しても降雨や水洗により簡単に落せる状態になる。
【0027】
更に、壁面表面が上記高度の親水性を呈し、かつその状態を維持することで、防曇効果、表面清浄化効果の他、帯電防止効果(ほこり付着防止効果)、断熱効果、水中での気泡付着防止効果、熱交換器における効率向上効果、生体親和性向上効果等が発揮されるようになる。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a sound insulation wall of a road or a railway having a coating film whose surface can be cleaned with water.
[0002]
[Prior art]
In the field of construction and paint, contamination of building exterior materials, outdoor buildings and coating films has become a problem with environmental pollution. Dust and particles floating in the atmosphere accumulate on the roof and outer walls of buildings in fine weather. Sediment is washed away by rainwater along with the rain and flows down the outer wall of the building. Furthermore, in the rainy weather, suspended dust is carried by the rain and flows down the outer wall of the building and the surface of the outdoor building. As a result, contaminants adhere to the surface along the rainwater path. As the surface dries, striped stains appear on the surface. The dirt of building exterior materials and coating films consists of combustion products such as carbon black, and inorganic contaminants such as urban dust and clay particles. It is thought that such a variety of pollutants complicates antifouling measures (Yoshinori Tachibana, “Promoting test for contamination of exterior wall finishing materials”, Architectural Institute of Japan, Structured Papers No. 404, October 1989, p. 15-24). Conventional wisdom has been that water-repellent paints such as polytetrafluoroethylene (PTFE) have been considered preferable to prevent dirt on the exterior of the building, but recently, cities that contain a large amount of hydrophobic components. It is considered that the surface of the coating film should be made as hydrophilic as possible against soot and dust (Polymer, Vol. 44, May 1995, p. 307). Therefore, it has been proposed to paint a building with a hydrophilic graft polymer (newspaper "Chemical Industry Daily", January 30, 1995). According to reports, this coating film exhibits a hydrophilicity of 30 to 40 ° in terms of a contact angle with water. However, the contact angle with water of inorganic dust typified by clay minerals is 20 ° to 50 °, and has an affinity for graft polymers with a contact angle with water of 30 to 40 °. It is thought that this graft polymer coating cannot prevent contamination by inorganic dust.
[0003]
[Problems to be solved by the invention]
The object of the present invention is to improve the storage stability to prevent the surface from becoming dirty or to form a coating film that can be cleaned with water by making the surface highly hydrophilic. It is to provide an excellent road or railway sound insulation wall.
[0004]
[Means for Solving the Problems]
The present invention is based on the discovery that in a member in which a surface layer containing a photocatalyst is formed, when the photocatalyst is photoexcited, the surface of the member is highly hydrophilized. This phenomenon is considered to proceed by the mechanism shown below. That is, when the photocatalyst is irradiated with light having energy greater than the energy gap between the upper end of the valence band of the photocatalyst and the lower end of the conduction band, the electrons in the valence band of the photocatalyst are excited to cause conduction electrons and holes to be generated. The polarity is imparted to the surface by the action of either or both of the generated and generated. Thereby, water is chemically adsorbed on the surface, and further, a physical adsorption water layer is formed thereon and increases. Thereby, the surface becomes highly hydrophilic with a water wetting angle of 10 ° or less.
[0005]
The sound insulation wall of the road or railway according to the present invention has a surface covered with a semiconductor photocatalyst-containing layer, and the photocatalyst-containing layer is formed of silicone in which particles of the photocatalyst are dispersed. An organic group bonded to a silicon atom is formed of a silicone derivative that is at least partially substituted with a hydroxyl group by the action of a photocatalyst, and the surface of the layer is made of water as the photocatalyst is photoexcited by sunlight. The contact angle is reduced to 10 ° or less, so that hydrophobic contaminants are prevented from adhering to the surface of the sound insulation wall, or when the sound insulation wall is exposed to rain, dirt adhered to the surface of the sound insulation wall is caused by rainwater. The structure was washed away.
[0006]
The road or railway sound insulation wall according to the present invention is made by coating the surface with a semiconductor photocatalyst-containing layer, the photocatalyst-containing layer is TiO 2, ZnO, SnO 2, SrTiO 3, WO 3, Bi 2 O 3, Fe Including one photocatalyst selected from the group consisting of 2 O 3 , the photocatalyst-containing layer further including one metal selected from the group consisting of Pt, Pd, Rh, Ru, Os, Ir, When the photocatalyst is photoexcited by sunlight, the surface of the layer is made hydrophilic, thereby preventing hydrophobic contaminants from adhering to the surface of the sound insulation wall, or when the sound insulation wall is exposed to rain. The dirt attached to the surface of the sound insulation wall is washed away by rainwater.
[0007]
A configuration in which at least a part of the sound insulation wall is made of a transparent material and the photocatalyst containing layer is transparent is conceivable. The photocatalyst containing layer is composed of TiO 2 , ZnO, SnO 2 , SrTiO 3 , WO 3 , Bi 2 O 3 , Fe 2. One type of photocatalyst selected from the group consisting of O 3 is included, and more specifically, anatase titania can be used.
The photocatalyst-containing layer may further contain one kind of metal selected from the group consisting of Pt, Pd, Rh, Ru, Os, and Ir.
[0008]
Further, the method for cleaning a sound insulation wall of a road or a railway according to the present invention is such that a sound insulation wall covered with a semiconductor photocatalyst containing layer is installed on a side of a road or a railway, and the sound insulation wall is exposed to the sun to expose the sound insulation wall to sunlight. The surface of the layer is hydrophilized by exposing the sound insulation wall to rain, and the dirt adhering to the surface of the layer is washed away with rain water.
[0009]
Another method for cleaning a road or railway sound insulation wall according to the present invention is to install a sound insulation wall covered with a semiconductor photocatalyst containing layer on the side of a road or railway, and to expose the sound insulation wall to solar radiation, thereby photocatalyzing with sunlight. The surface of the layer is hydrophilized by supplying water, and water is supplied to the surface of the layer to wash away contaminants adhering to the surface of the layer.
[0010]
The water is supplied by, for example, injecting water onto a sound insulation wall, and the water is injected from, for example, a traveling work vehicle.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
As a base material applicable as a sound insulation wall for roads or railways according to the present invention, it is a transparent member when antifogging effect is expected, and its material can be suitably used glass, plastic, etc. When the effect is expected, for example, metal, ceramic, glass, plastic, wood, stone, cement, concrete, fiber, fabric, a combination thereof, or a laminate thereof can be suitably used.
[0012]
The surface of the sound insulation wall for road or railway is covered with a semiconductor photocatalyst containing layer, the photocatalyst containing layer is formed of silicone in which particles of photocatalyst are dispersed, and an organic group bonded to silicon atoms of silicone molecules of the photocatalyst containing layer is formed. It is formed of a silicone derivative that is at least partially substituted with a hydroxyl group by the action of a photocatalyst.
[0013]
In the present invention, photocatalytic titanium oxide is valence when irradiated with light (excitation light) having energy (ie, short wavelength) larger than the energy gap between the conduction band and valence band of the crystal. This refers to titanium oxide that can generate conduction electrons and holes due to excitation (photoexcitation) of electrons in the electron band. For example, crystalline titanium oxide such as anatase type titanium oxide and rutile type titanium oxide is preferred. Available. High hydrophilicity in the present invention refers to a state exhibiting water wettability of 10 ° or less, preferably 5 ° or less in terms of contact angle with water.
[0014]
Silicon has an average composition formula RpSiO (4-p) / 2 (wherein R is a functional group composed of one or more monovalent organic groups, or a monovalent organic group and a hydrogen group). A functional group consisting of two or more selected from: X is an alkoxy group or a halogen atom, and p is a number satisfying 0 <p <2. This resin can be obtained by partially hydrolyzing and dehydrating polycondensation of a silicon precursor described later.
[0015]
Here, as a precursor of silicon, an average composition formula RpSiXqO (4-pq) / 2 (wherein R is a functional group composed of one or more monovalent organic groups, or a monovalent It is a functional group composed of two or more selected from an organic group and a hydrogen group, X is an alkoxy group or a halogen atom, and p and q are numbers satisfying 0 <p <2, 0 <q <4 Or a general formula RpSiX4-p (wherein R is a functional group consisting of one or more monovalent organic groups, or a monovalent organic group). A functional group consisting of two or more selected from a group and a hydrogen group, X is an alkoxy group or a halogen atom, and p is 1 or 2. A film forming element can be suitably used.
[0016]
Here, as the coating film forming element comprising the hydrolyzable silane derivative, methyltrimethoxysilane, methyltriethoxysilane, methyltripropoxysilane, methyltributoxysilane, ethyltrimethoxysilane, ethyltriethoxysilane, ethyltripropoxy Silane, ethyltributoxysilane, phenyltrimethoxysilane, phenyltriethoxysilane, phenyltripropoxysilane, phenyltributoxysilane, dimethyldimethoxysilane, dimethyldiethoxysilane, dimethyldipropoxysilane, dimethyldibutoxysilane, diethyldimethoxysilane, Diethyldiethoxysilane, diethyldipropoxysilane, diethyldibutoxysilane, phenylmethyldimethoxysilane, phenylmethyldiethoxysilane, Nylmethyldipropoxysilane, phenylmethyldibutoxysilane, n-propyltrimethoxysilane, n-propyltriethoxysilane, n-propyltripropoxysilane, n-propyltributoxysilane, γ-glycoxydoxypropyltrimethoxysilane, γ-acryloxypropyltrimethoxysilane or the like can be suitably used.
[0017]
In addition, as the film-forming element comprising the siloxane, partial hydrolysis and dehydration condensation polymerization of the hydrolyzable silane derivative, or partial hydrolyzate of the hydrolyzable silane derivative, tetramethoxysilane, tetraethoxysilane, It can be produced by dehydration condensation polymerization with a partial hydrolyzate such as tetrapropoxysilane, tetrabutoxysilane, diethoxydimethoxysilane or the like.
[0018]
The hydrolyzable silane derivative has a general formula RpSiX4-p (wherein R is a functional group composed of one or more monovalent organic groups or a monovalent organic group and a hydrogen group selected from 2). A hydrolyzable silane derivative represented by a functional group comprising at least a species, X is an alkoxy group or a halogen atom, and p is 1 or 2.
[0019]
Here, as the hydrolyzable silane derivative, methyltrimethoxysilane, methyltriethoxysilane, methyltripropoxysilane, methyltributoxysilane, ethyltrimethoxysilane, ethyltriethoxysilane, ethyltripropoxysilane, ethyltributoxysilane , Phenyltrimethoxysilane, phenyltriethoxysilane, phenyltripropoxysilane, phenyltributoxysilane, dimethyldimethoxysilane, dimethyldiethoxysilane, dimethyldipropoxysilane, dimethyldibutoxysilane, diethyldimethoxysilane, diethyldiethoxysilane, diethyl Dipropoxysilane, diethyldibutoxysilane, phenylmethyldimethoxysilane, phenylmethyldiethoxysilane, phenylmethyldipropoxy Sisilane, phenylmethyldibutoxysilane, n-propyltrimethoxysilane, n-propyltriethoxysilane, n-propyltripropoxysilane, n-propyltributoxysilane, γ-glycoxideoxypropyltrimethoxysilane, γ-acryloxy Propyltrimethoxysilane or the like can be suitably used.
[0020]
The siloxane oligomer that coats titanium oxide has an average composition formula RpSiXqO (4-pq) / 2 (wherein R is a functional group composed of one or more monovalent organic groups or a monovalent organic group). A functional group comprising two or more selected from a group and a hydrogen group, X is an alkoxy group or a halogen atom, and p and q are numbers satisfying 0 <p <2, 0 <q <4 A partial hydrolysis and dehydration condensation polymerization of the hydrolyzable silane derivative, or a partial hydrolyzate of the hydrolyzable silane derivative, tetramethoxysilane, tetraethoxysilane, tetra It refers to a dimer to 10-mer of a hydrolyzable silane derivative that can be prepared by dehydration condensation polymerization with a partial hydrolyzate such as propoxysilane, tetrabutoxysilane, diethoxydimethoxysilane and the like.
[0021]
The tetrafunctional hydrolyzable silane derivative covering titanium oxide has a general formula SiX4 (wherein R is a functional group composed of one or more monovalent organic groups, or a monovalent organic group and a hydrogen group). And a functional group consisting of two or more selected from the group consisting of an alkoxy group and a halogen atom.
[0022]
Here, as the tetrafunctional hydrolyzable silane derivative, tetramethoxysilane, tetraethoxysilane, tetrapropoxysilane, tetrabutoxysilane, diethoxydimethoxysilane and the like can be suitably used.
[0023]
The silicate oligomer covering titanium oxide has an average composition formula of SiXqO (4-q) / 2 (wherein X is an alkoxy group or a halogen atom, and q is a number satisfying 0 <q <4. And a di- to 10-mer of tetrafunctional hydrolyzable silane that can be prepared by partial hydrolysis and dehydration condensation polymerization of the above tetrafunctional hydrolyzable silane derivative. .
[0024]
Examples of the method for fixing the coating to the titanium oxide particles include spray coating, dip coating, flow coating, spin coating, roll coating, brush coating, and sponge. After coating by a method such as coating, the plate is fixed by a method such as heat treatment.
[0025]
Metals such as Ag, Cu, and Zn can be added to the coating composition. When the metal is added, the surface layer formed by the coating film can kill bacteria and wrinkles attached to the surface even in the dark.
[0026]
A platinum group metal such as Pt, Pd, Ru, Rh, Ir, and Os can be added to the coating composition. When the metal is added, the surface layer formed by the coating film can enhance the redox activity of the photocatalyst, and can improve the degradability of organic contaminants and the decomposability of harmful gases and odors.
[0027]
In addition, the coating composition includes a catalyst that promotes hydrolysis of a solvent such as water, ethanol, and / or a precursor of silicone such as hydrochloric acid, nitric acid, sulfuric acid, acetic acid, and maleic acid, Catalysts for curing the precursors of silicon such as basic compounds such as tributylamine and hexylamine, acidic compounds such as aluminum triisopropoxide and tetraisopropyl titanate, and copolymers such as silane coupling agents. -You may add surfactant etc. which improve the dispersibility of a ting liquid.
[0028]
Basically, the coating composition is applied by coating the coating composition on the wall surface of a sound insulation wall of a road or railway and curing it to form a coating film.
[0029]
Examples of the coating composition coating method include spray coating, dip coating, flow coating, spin coating, roll coating, brush coating, and sponge coating. The method can be suitably used. As the curing method, polymerization can be performed by heat treatment, standing at room temperature, irradiation with ultraviolet rays, or the like.
[0030]
When a coating film is formed on the sound insulation wall surface by the above method, the wall surface becomes hydrophilic in response to photoexcitation of the photocatalyst. Here, in order for the substrate surface to be highly hydrophilic by photoexcitation of the photocatalyst, the illuminance of the excitation light may be 0.001 mW / cm 2 or more, preferably 0.01 mW / cm 2 or more. More preferably, it is 1 mW / cm 2 or more. As the light source used for photoexcitation of the photocatalyst, sunlight, indoor lighting, fluorescent lamp, mercury lamp, incandescent lamp, xenon lamp, high-pressure sodium lamp, metal halide lamp, BLB lamp and the like can be suitably used.
[0031]
The film thickness of the surface layer formed by the coating on the sound insulating wall surface is preferably 0.4 μm or less. By doing so, white turbidity due to irregular reflection of light can be prevented, and the surface layer becomes substantially transparent. Furthermore, it is more preferable that the film thickness of the surface layer is 0.2 μm or less. By doing so, coloration of the surface layer due to light interference can be prevented. Further, the thinner the surface layer, the higher the transparency. Furthermore, if the film thickness is reduced, the wear resistance of the surface layer is improved.
[0032]
【The invention's effect】
According to the sound insulation wall of the road or railway according to the present invention, the surface of the sound insulation wall is converted to a contact angle with water of 10 ° or less, so that condensed water can be used even if moisture or steam in the air is condensed. However, the tendency of forming a uniform water film without forming individual water droplets becomes remarkable. Therefore, the tendency not to cause light scattering haze on the surface becomes remarkable.
Similarly, if the sound insulation wall surface is in a state of 10 ° or less, preferably 5 ° or less in terms of contact angle with water, carbon black contained in exhaust gas from urban dust, automobiles, etc. Hydrophobic pollutants such as combustion products, fats and oils, sealant elution components, and inorganic clay pollutants are difficult to adhere, and even if they adhere, they can be easily removed by rainfall or water washing.
[0027]
Furthermore, the surface of the wall surface exhibits the above-mentioned high degree of hydrophilicity and maintains this state, so that in addition to the antifogging effect and the surface cleaning effect, the antistatic effect (dust adhesion preventing effect), the heat insulating effect, and the bubbles in water Adhesion prevention effect, efficiency improvement effect in heat exchanger, biocompatibility improvement effect, etc. come to be exhibited.
Claims (6)
前記光触媒含有層は光触媒の粒子が分散されたシリコーンによって形成されており、
前記光触媒含有層のシリコーン分子のケイ素原子に結合した有機基が光触媒の作用により少なくとも部分的に水酸基に置換されたシリコーン誘導体で形成されており、
前記光触媒が太陽光によって光励起されるに応じて前記層の表面は水との接触角が10°以下に親水化され、
もって、疎水性の汚染物質が遮音壁の表面に付着するのが防止され、
若しくは、遮音壁が降雨にさらされた時に遮音壁の表面に付着した汚れが雨水により洗い流されるようになっていることを特徴とする
道路又は鉄道の遮音壁。The surface of the sound insulation wall of a road or railway is covered with a semiconductor photocatalyst containing layer,
The photocatalyst-containing layer is formed of silicone in which photocatalyst particles are dispersed,
The organic group bonded to the silicon atom of the silicone molecule of the photocatalyst containing layer is formed of a silicone derivative that is at least partially substituted with a hydroxyl group by the action of the photocatalyst,
As the photocatalyst is photoexcited by sunlight, the surface of the layer is hydrophilized so that the contact angle with water is 10 ° or less ,
This prevents hydrophobic contaminants from adhering to the surface of the sound insulation wall,
Alternatively, the sound insulation wall of a road or railway, wherein dirt attached to the surface of the sound insulation wall is washed away by rain water when the sound insulation wall is exposed to rain.
前記遮音壁を太陽の照射にさらすことにより太陽光によって光触媒を励起させて
前記層の表面を水との接触角が10°以下に親水化させ、
前記遮音壁を降雨にさらすことにより前記層の表面に付着した汚れを雨水により洗い流させることを特徴とする
道路又は鉄道の遮音壁の洗浄方法。Install a sound insulation wall covered with a semiconductor photocatalyst containing layer on the side of a road or railway,
Exposing a photocatalyst by sunlight by exposing the sound insulation wall to solar radiation to make the surface of the layer hydrophilic with a water contact angle of 10 ° or less ,
A method of cleaning a sound insulation wall of a road or a railway, wherein the sound insulation wall is exposed to rain to wash away dirt adhering to the surface of the layer with rain water.
前記層の表面を水との接触角が10°以下に親水化させ、
前記層の表面に水を供給することにより前記層の表面に付着した汚染物質を洗い流すことからなる道路又は鉄道の遮音壁の洗浄方法。A sound insulation wall covered with a semiconductor photocatalyst-containing layer is installed on the side of a road or railway, and the sound insulation wall is exposed to the sun to excite the photocatalyst by sunlight so that the surface of the layer has a contact angle with water of 10 Hydrophilize below ° ,
A method for cleaning a sound insulation wall of a road or a railway, comprising washing away contaminants adhering to the surface of the layer by supplying water to the surface of the layer.
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