JP3725059B2 - Semiconductor dynamic quantity sensor - Google Patents

Description

[0001]
[Industrial application fields]
The present invention relates to a semiconductor dynamic quantity sensor, in particular suitable for a yaw rate sensor.
[0002]
[Prior art]
The present applicant has already proposed a semiconductor yaw rate sensor in Japanese Patent Application No. 223072. As shown in FIG. 17, a beam structure separated from the substrate is formed on a part of the semiconductor substrate, and AC power is applied to one surface of the weight formed at the tip of the beam and the substrate wall facing the weight surface. In addition, the weight is excited by static electricity, and an electrode is disposed opposite to the surface of the weight and the substrate wall facing the weight surface in an axial direction perpendicular to the exciting direction of the weight to change the capacitance between the facing electrodes. The yaw rate acting in the same direction is detected electrically.
[0003]
[Problems to be solved by the invention]
However, a semiconductor dynamic quantity sensor that moves in two directions, such as this semiconductor yaw rate sensor, is insufficient from the viewpoint of its specific structure, and is a future problem.
[0004]
Therefore, an object of the present invention is to provide a semiconductor dynamic sensor having a novel structure.
[0005]
[Means for Solving the Problems]
To achieve the above object, the present invention includes a silicon layer formed over an insulating film on a substrate, a movable portion formed in the silicon layer, facing the movable portion is insulated from the said substrate A counter electrode formed at a position ; an electrode lead- out portion electrically connected to the counter electrode; and a silicon layer formed on the silicon layer and separated from the movable portion through an insulator including a gap; A semiconductor dynamic quantity sensor having a fixed portion fixed to the substrate via the insulating layer between the silicon layer and the substrate and partially disposed so as to be insulated from the substrate. A silicon film is further provided, and an electrical path from the counter electrode to the electrode extraction portion is formed using a part of the silicon layer adjacent to the gap of the fixed portion, and is electrically connected to the electrode extraction portion. Connection First and site that was formed by using a part of the silicon layer which is arranged below the gap, and a second portion for electrically connecting said counter electrode and said first portion The present invention is characterized by a semiconductor dynamic quantity sensor.
[0006]
Furthermore, the present invention has a substrate and a silicon layer, and a movable element is formed from the silicon layer, and the movable element is connected to the substrate in a semiconductor mechanical quantity sensor, between the substrate and the silicon layer. The semiconductor dynamic quantity sensor is characterized in that a conductive layer is provided on the silicon layer and the conductive layer is insulated from the silicon layer portion by the insulating layer.
[0007]
【Example】
(First embodiment)
An embodiment embodying the present invention will be described below with reference to the drawings.
[0008]
FIG. 2 shows a schematic plan view of the semiconductor yaw rate sensor in the present embodiment. That is, in this sensor, the cantilever 102 is formed on the single crystal silicon substrate 101, and the weight 139 is formed at the tip thereof. In addition, three protrusions 103, 104, and 105 are extended from the tip of the weight 139 in the extending direction of the beam. In addition, on the single crystal silicon substrate 1 side facing the tip surface of the cantilever 102 (weight 139), two protrusions 106 and 107 are separated from each other between the protrusions 103 and 104, and the protrusions 103 and 104 are extended. It extends in a state parallel to the direction. Similarly, on the silicon substrate 101 side facing the tip surface of the cantilever 102 (weight 139), two protrusions 108 and 109 are separated between the protrusions 104 and 105, and the extending direction of the protrusions 104 and 105 is the same. It is extended in a parallel state.
[0009]
FIG. 3 is a plan view of the semiconductor yaw rate sensor including the electrodes. Further, FIG. 1 shows a cross-sectional view taken along line AA of FIG. Note that the IC circuit, wiring and the like formed in the SOI circuit are omitted, and only the aluminum electrode for external extraction is shown with respect to only the electrode for extracting the capacitance and the vibration electrode in this sensor. That is, all electrode extraction portions are formed on the main surface of the single crystal silicon substrate 101.
[0010]
As shown in FIG. 1, a single crystal silicon substrate 101 is bonded to a single crystal silicon substrate 110 via a SiO ₂ film 111, and the beam structure described above is formed on the single crystal silicon substrate 101.
[0011]
1 and 3, the movable electrode 112 is formed on the surface of the weight 139 of the cantilever 102. The movable electrode 112 includes three protrusions 103, 104, and 105 of a weight 139. Two electrodes 113 and 114 are arranged in parallel below the weight 139. The excitation electrode 114 is for applying AC power to excite the weight 139 by static electricity. That is, the movable counter electrode 112 and the excitation electrode 114 form an excitation counter electrode.
[0012]
On the other hand, the sensing electrode 113 is for detecting the excitation of the weight 139, and the predetermined weight 139 is excited by feedback control based on the output signal accompanying the excitation of the weight 139. That is, the movable feedback electrode 112 and the sensing electrode 113 form an excitation feedback counter electrode.
[0013]
Further, as shown in FIG. 3, fixed electrodes 133 and 134 (projections 106) are formed with the projection 103 of the cantilever 102 interposed therebetween, and fixed electrodes 135 (projections 107) and 136 (projections) with the projection 104 interposed therebetween. 108) is formed. Further, fixed electrodes 137 (protrusions 109) and 138 are formed with the protrusion 105 interposed therebetween. That is, the protrusion 103 (movable electrode 112) and the fixed electrodes 133 and 134 form a counter electrode, and the protrusion 104 (movable electrode 112) and the fixed electrodes 135 and 136 form a counter electrode. Further, a counter electrode is formed by the protrusion 105 (movable electrode 112) and the fixed electrodes 137 and 138.
[0014]
4 to 8 show the manufacturing process. Hereinafter, the manufacturing process will be described. As shown in FIG. 4, an n-type (100) single crystal silicon substrate 101 of 1 to 20 Ω · cm is prepared, and a recess 115 is formed at a predetermined depth on the main surface of the single crystal silicon substrate 101 by dry etching or wet etching. For example, it is formed with a depth of 0.1 to 5 μm. Then, an SiO ₂ film is formed on the main surface of the single crystal silicon substrate 101, and a pattern is formed by a photolithography technique. Subsequently, a trench 116 of about 0.1 to 30 μm is formed on the main surface of the single crystal silicon substrate 101 including the bottom of the recess 115 by dry etching or the like.
[0015]
In the present embodiment, the recess 115 and the trench 116 form a groove. Then, an n + diffusion layer 117 is formed on the main surface of the single crystal silicon substrate 101 including the inner wall of the trench 116, and an SiO ₂ film 118 is formed on the surface by thermal oxidation.
[0016]
Thereafter, as shown in FIG. 5, a polysilicon film 119 is buried in the recess 115 and the trench 116 by LPCVD. Subsequently, the surface of the polysilicon film 119 is polished using the SiO ₂ film 118 as a stopper to smooth the surface. At this time, it is desirable that the surfaces of the polysilicon film 119 and the SiO ₂ film 118 become smooth.
[0017]
Subsequently, a SiO ₂ film 120 having a thickness of about 0.3 to ₂ μm is formed on the surface by, eg, CVD, and a lower contact 121 for electrical connection with the n + diffusion layer 117 is formed at a predetermined position.
[0018]
Further, n + polysilicon 122 having As and P (phosphorus) as impurities is formed to a thickness of 0.2 to 1 μm, and this is used as a predetermined electrode pattern and shield layer. Next, a BGSP film 123 which is an insulating film, for example, is formed on the surface with a thickness of 0.2 to 1 μm. Then, the surface of the BGSP film 123 is flattened and polished.
[0019]
On the other hand, as shown in FIG. 6, a silicon substrate 110 is prepared, and a 0.2 to 1 μm SiO ₂ film 111 is formed on the surface thereof by thermal oxidation. Subsequently, as shown in FIG. 7, the silicon substrates 101 and 110 are bonded in the N 2 at 1000 ° C., for example, via the SiO ₂ film 111. Then, the back surface of the single crystal silicon substrate 101 is selectively polished using the SiO ₂ film 118 as a stopper. By this polishing, the polysilicon 119 and the region of the silicon substrate 101 separated thereby are exposed on the surface.
[0020]
Subsequently, an IC substrate and other devices (not shown) are produced in a region of the single crystal silicon substrate 101 by a known method, and an aluminum wiring, a passivation film, and a pad window (none are shown) are formed.
[0021]
Subsequently, as shown in FIG. 8, the SiO ₂ film 118 in a predetermined region is removed, and the polysilicon film 119 in the predetermined region is removed using the etching hole 124 shown in FIG. As an example, a TMAH (tetramethylammonium hydroxide) etching solution is used. By this etching, a movable electrode (beam part) is formed.
[0022]
In the semiconductor yaw rate sensor manufactured in this way, the single crystal silicon substrate 101 thinned through the SiO ₂ film 111 is bonded to the silicon substrate 110, and the single crystal silicon substrate 101 has a weight 139 at the tip. A cantilever beam 102 is formed. Further, an n + diffusion layer 117 is formed on one surface of the weight 139 (the lower surface in FIG. 1), and an n + polysilicon 122 (excitation electrode 114) is formed on the lower surface of the single crystal silicon substrate 101 facing the weight surface. An excitation counter electrode is formed by the n + diffusion layer 117 and the n + polysilicon 122. Then, AC power is applied to the counter electrode for excitation, and the weight 139 is excited by static electricity. Further, in the axial direction perpendicular to the excitation direction of the weight 139, an n + diffusion layer 117 is formed on one surface of the weight 139, and an n + diffusion layer 117 is formed on the wall surface of the single crystal silicon substrate 101 facing the weight surface. The n + diffusion layer 117 on the weight 139 side and the n + diffusion layer 117 on the wall surface side of the single crystal silicon substrate 101 form a yaw rate detection electrode. A yaw rate acting in the same direction is detected by detecting a change in electric capacity by the yaw rate detecting electrode.
[0023]
That is, AC power is applied to the excitation counter electrode (n + diffusion layer 117 and n + polysilicon 122) to excite the weight 139 by static electricity. In this state, the capacitance of the yaw rate detection electrode (the n + diffusion layer 117 on the weight 139 side and the n + diffusion layer 117 on the wall surface side of the single crystal silicon substrate 101) varies in the axial direction perpendicular to the excitation direction of the weight 139. Is detected and a yaw rate acting in the same direction is detected.
[0024]
As described above, in this embodiment, the concave portion 115 and the trench 116 as grooves having a predetermined depth for forming the cantilever 102 having the weight 139 are formed on the main surface of the single crystal silicon substrate 101 (first step). ), An n + diffusion layer 117 as a pair of counter electrodes sandwiching the trench 116 in the substrate surface direction (left-right direction in FIG. 4) on the substrate surface region to be the weight 139 and the recess 115 surrounding the weight 139 and the inner wall of the trench 116. At the same time, an n + diffusion layer 117 (first electrode) is formed in a direction perpendicular to the substrate surface direction (vertical direction in FIG. 5; thickness direction of the silicon substrate 101) in the substrate surface region to be the weight 139 (second electrode) Process). Then, the recess 115 and the trench 116 are filled with a polysilicon film 119 as a filler, and an n + polysilicon film 122 (electrode) facing the n + diffusion layer 117 (first electrode) with the polysilicon film 119 interposed therebetween. Further, the main surface of the single crystal silicon substrate 101 is smoothed (third step), and the main surface of the single crystal silicon substrate 101 and the silicon substrate 110 are joined (fourth step). Further, the back surface side of the single crystal silicon substrate 101 is polished by a predetermined amount to reduce the thickness of the single crystal silicon substrate 101 (fifth step), and the polysilicon film 119 is removed by etching from the back surface side of the single crystal silicon substrate 101 to thereby reduce the weight 139. The cantilever beam 102 having the above is formed (sixth step).
[0025]
As a result, the single crystal silicon substrate 101 bonded to the silicon substrate 110 via the SiO ₂ film 111 (insulating film) and thinned, and the beam 102 formed on the single crystal silicon substrate 101 and having the weight 139 The movable electrode 112 and the excitation electrode 114 (first counter electrode) formed on one surface of the weight 139 and the wall surface corresponding to the weight surface are orthogonal to the movable electrode 112 and the excitation electrode 114 of the weight 139. Protrusions 103 to 105 and fixed electrodes 133 to 138 (second counter electrodes) formed on one surface of the weight 139 and a wall surface facing the weight surface in the axial direction are provided.
[0026]
Further, one of the counter electrodes, that is, the movable electrode 112 and the excitation electrode 114 are formed in parallel to the main surface of the single crystal silicon substrate 101. Further, all electrode extraction portions were formed on the same surface of the thinned single crystal silicon substrate 101.
[0027]
As described above, the single crystal silicon substrate 101 bonded to the silicon substrate 110 via the SiO ₂ film 111 and thinned, and the cantilever formed on the single crystal silicon substrate 101 and having the weight 139 at the tip. 102, a counter electrode for excitation formed on one surface of the weight 139 and the wall surface of the single crystal silicon substrate 101 opposite to the weight surface, and exciting the weight 139 with static electricity by applying AC power, and the excitation direction of the weight 139 A yaw rate detection electrode formed on one surface of the weight 139 and the wall surface of the single crystal silicon substrate 101 facing the same weight surface in the direction of the orthogonal axis and for detecting a yaw rate acting in the same direction by detecting a change in electric capacitance. And a semiconductor yaw rate sensor.
[0028]
In this way, surface micromachining technology is used to stabilize the process and prevent contamination during the wafer process, especially during IC circuit fabrication, without performing heat treatment or photolithographic processing in the presence of wafer recesses or through-holes. Nation can be prevented and the device can be stabilized and highly accurate.
[0029]
As an application of the present embodiment, the above embodiment has been described with the structure in which the excitation electrode and the sense electrode are embedded in the substrate, but the sense electrode may be omitted for cost reduction. In this case, in addition to the above structure, the silicon substrate can be used as it is as an excitation electrode.
[0030]
In this embodiment, the electrodes formed parallel to the wafer surface are used as sensing electrodes and excitation electrodes, and the vertical electrodes are used as fixed electrodes for detecting Coriolis force. it can. That is, one of the fixed electrodes formed in the vertical direction on the silicon substrate 101 is used as an excitation electrode, the other vertical electrode is used as a sensing electrode for applying feedback, and a horizontal electrode on the wafer surface is used as a Coriolis force. It is good also as an electrode for detecting.
[0031]
Further, the polysilicon film 119 (that is, the polycrystalline silicon film) for filling the recess 115 and the trench 116 may be amorphous or a silicon film in which polycrystalline and amorphous are mixed.
[0032]
(Second embodiment)
Next, the second embodiment will be described focusing on the differences from the first embodiment.
[0033]
In this embodiment, the output is further increased as compared with the first embodiment, and the beam is prevented from being broken due to excessive impact or the like. 9 to 15 show the manufacturing process of the sensor. Hereinafter, the manufacturing process will be described.
[0034]
In FIG. 4 of the first embodiment, as shown in FIG. 9, after the formation of the SiO ₂ film 118, a 200 to 2000 inch Si ₃ N ₄ film 125 is formed by LPCVD. In this embodiment, the thickness of the Si ₃ N ₄ film 125 is 500 mm.
[0035]
Surface flattening polishing as shown in FIG. 7 of the first embodiment is performed in the same process as the first embodiment. Subsequently, a predetermined pattern is formed with the resist 126 of FIG. 9 by photolithography. Then, as shown in FIG. 10, a region to be a sensor portion of the single crystal silicon substrate 101 is partially removed by dry etching or the like.
[0036]
Next, using the resist 126 as a mask, the SiO ₂ film 118 is removed by wet etching mainly including hydrofluoric acid, for example. Subsequently, the resist 126 is removed.
[0037]
Hereinafter, in order to make the explanation easy to understand, the explanation will be made by using an enlarged view of the sensor portion B of FIG. FIG. 11 is an enlarged portion thereof.
[0038]
As shown in FIG. 12, 500 to 10,000 SiO ₂ films 127 are formed using the Si ₃ N ₄ film 125 as a mask for thermal oxidation. In this embodiment, the thickness of the SiO ₂ film 127 is 1000 mm.
[0039]
Subsequently, as shown in FIG. 13, the Si ₃ N ₄ film 125 used as a mask during thermal oxidation is removed by plasma etching or hot phosphoric acid etching. Subsequently, a polysilicon 128 is formed on the surface by LPCVD or the like, and the surface of the polysilicon 128 is removed by selective polishing using the SiO ₂ film 127 as a stopper.
[0040]
Further, the surface is finished with a TMAH (tetramethylammonium hydroxide) solution. Here, a process for forming an IC circuit or the like in the peripheral portion is performed (not shown).
[0041]
Then, as shown in FIG. 14, 500 to 2000 Si ₃ N ₄ films 129 are formed on the surface, and an n + polysilicon layer 130 is formed as a stopper against excessive amplitude of the electrode layer and sensor. Subsequently, a BPSG film 131 is formed as a surface protective film. This film can also be formed of a Si ₃ N ₄ film or the like. Subsequently, the window 132 is opened.
[0042]
Subsequently, as shown in FIG. 15, the polysilicon 119 and the polysilicon 128 are etched away from the window portion 132 with a TMAH solution. In this way, a sensor having a movable part (cantilever) surrounded by electrodes and stoppers is formed. Further, in this structure, when the weight portion is excited in the direction perpendicular to the substrate, as shown in FIG. 15, since there is b in the range of a> b and a, the capacity for detecting the yaw rate due to excitation is shown. There is little change. As described above, the relationship between a and b can be incorporated into the first embodiment.
[0043]
FIG. 16 is a view showing the overall state in more detail. As described above, in this embodiment, the stopper member is disposed above the cantilever beam 102. Therefore, the output is further increased compared to the first embodiment, and the cantilever beam 102 is prevented from being broken due to excessive impact or the like. it can.
[0044]
The present invention is not limited to the above embodiments. For example, two sensor units may be arranged in a direction orthogonal to each other to detect the yaw rate in the biaxial direction. Moreover, it is not limited to a cantilever. Furthermore, the present invention is not limited to yaw rate detection. For example, the excitation electrode in the above-described embodiment can be used as a mechanical sensor that can detect displacement in two directions by using a capacitance detection electrode for displacement in the vertical direction. It is.
[0045]
【The invention's effect】
As described above in detail, according to the present invention, an excellent effect that a novel semiconductor dynamic sensor can be provided is exhibited.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of a semiconductor yaw rate sensor according to a first embodiment.
FIG. 2 is a schematic plan view of the semiconductor yaw rate sensor in the first embodiment.
FIG. 3 is a plan view of a semiconductor yaw rate sensor including electrodes.
FIG. 4 is a cross-sectional view showing a manufacturing process.
FIG. 5 is a cross-sectional view showing a manufacturing process.
FIG. 6 is a cross-sectional view showing a manufacturing process.
FIG. 7 is a cross-sectional view showing a manufacturing process.
FIG. 8 is a cross-sectional view showing a manufacturing process.
FIG. 9 is a cross-sectional view showing a manufacturing process of the semiconductor yaw rate sensor of the second embodiment.
FIG. 10 is a cross-sectional view showing a manufacturing process.
FIG. 11 is a cross-sectional view showing a manufacturing process.
FIG. 12 is a cross-sectional view showing a manufacturing process.
FIG. 13 is a cross-sectional view showing a manufacturing process.
FIG. 14 is a cross-sectional view showing a manufacturing process.
FIG. 15 is a cross-sectional view showing a manufacturing process.
FIG. 16 is a cross-sectional view showing a manufacturing process.
FIG. 17 is an explanatory diagram for explaining the principle of a sensor;
[Explanation of symbols]
101 SiO ₂ film 112 trench 117 constituting the concave portion 116 groove movable electrode 114 constituting the excitation electrodes 115 groove n + diffusion layer 119 polysicon film as a single-crystal silicon substrate 102 cantilever 103 to 105 projections 110 silicon substrate 111 insulating film 122 n + polysilicon films 133 to 138 Fixed electrode 139 Weight

Claims (4)

A silicon layer formed on the substrate via an insulating film;
A movable part formed in the silicon layer ;
A counter electrode formed at a position facing the movable portion is insulated from the said substrate,
An electrode extraction portion electrically connected to the counter electrode ;
A fixed portion formed on the silicon layer, separated from the movable part via an insulator including a void, and fixed to the substrate via the insulating film;
A semiconductor dynamic quantity sensor comprising:
On the insulating film between the silicon layer and the substrate, further has a silicon film that is partially isolated and insulated from the substrate;
The electrical path from the counter electrode to the electrode extraction part is
A first portion formed using a part of the fixed portion of the silicon layer adjacent to the gap and electrically connected to the electrode extraction portion;
A second part formed by using a part of the silicon film disposed under the gap, and electrically connecting the counter electrode and the first part;
The semiconductor physical quantity sensor comprising: a. 2. The semiconductor dynamic quantity sensor according to claim 1, wherein the silicon film constituting the second portion is made of polycrystalline silicon. The semiconductor mechanical quantity sensor according to claim 1, further comprising a silicon dioxide film disposed on the second portion. 4. The semiconductor dynamic quantity sensor according to claim 1, wherein the electrode lead-out portion is disposed on substantially the same plane as the surface of the movable portion. 5.

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