JP3779348B2 - High purity furnace for graphite members - Google Patents
High purity furnace for graphite members Download PDFInfo
- Publication number
- JP3779348B2 JP3779348B2 JP09444295A JP9444295A JP3779348B2 JP 3779348 B2 JP3779348 B2 JP 3779348B2 JP 09444295 A JP09444295 A JP 09444295A JP 9444295 A JP9444295 A JP 9444295A JP 3779348 B2 JP3779348 B2 JP 3779348B2
- Authority
- JP
- Japan
- Prior art keywords
- furnace
- graphite
- halogen gas
- pyrolytic carbon
- processed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Landscapes
- Carbon And Carbon Compounds (AREA)
- Coke Industry (AREA)
- Muffle Furnaces And Rotary Kilns (AREA)
Description
【0001】
【産業上の利用分野】
本発明は、高純度の黒鉛部材を得るための黒鉛部材の高純度化処理炉に関する。
【0002】
【従来の技術】
黒鉛部材は、耐熱性、耐薬品性、熱伝導性、高温下での機械的強度性等に優れているため、半導体装置、原子炉装置等の産業上重要性の高い部材の素材として注目されている。
近年は更に、シリコンの単結晶引き上げ装置用部材、エピタキシャル成長用サセプター、プラズマCVDボード、エッチング用電極等の分野で多くの利用価値のあることが判ってきた。しかしながら、これらの用途に使用される黒鉛部材は極めて高い純度が要求されている。
【0003】
高純度の黒鉛部材を得るための黒鉛部材の高純度化方法としては、例えば、高純度化処理炉内に黒鉛炉部材を配置し、炉壁と黒鉛炉部材との間隙にコークス等の詰め粉を入れて、炉の側壁一方向からハロゲンガスを流入させつつ両側壁の電極に通電する方法、処理容器内に黒鉛炉部材からなるタイトボックスを設置し、これを加熱しつつハロゲンガスを導入し強制排気を行う方法等が、特開昭63−248703号公報、特開昭63−79759号公報等に開示されている。
【0004】
しかしながら、これらの方法では、長時間を要したり作業環境に不便があったり、また、一度に処理できる量が制限されたり大型品の処理が不可能であったり、メンテナンスに問題があったり、多くの問題点があった。
【0005】
特開平6−298510号公報には、上記高純度化処理炉において、タイトボックスを設けることなくヒーターをもって密閉容器内を加熱する方法により大型品の処理を可能とする技術が開示されている。しかしながら、処理済の黒鉛部材の純度の高さには、従来法と何ら変わるところがなく、なお問題点を有するものであった。
【0006】
【発明が解決しようとする課題】
従来の黒鉛部材の高純度化処理炉においては、黒鉛部材の高純度化に一定の限度があった。これらの高純度化処理炉の炉部材を構成する黒鉛は、多孔質であるため、高純度化処理時に被処理品から除去された不純物が、処理後の冷却時に炉内の炉部材に吸着される。そして、次回の処理時には再び高純度化処理炉内が高温となるため、この吸着された不純物が放出されて炉内雰囲気を汚染する。
【0007】
このような高純度化処理炉を繰り返し使用することにより、吸着不純物の累積化が起こり、更に炉内雰囲気の汚染度が増大することとなり、これにより、被処理品からの不純物の除去の完全性が次第に低下してゆくこととなる。上記の高純度化の一定の限度は、このために存在するものであった。
【0008】
更に、上記問題点のほか、炉内の炉材が多孔質であると、炉内に導入されたハロゲンガスが、多孔質の炉部材を通過し、処理容器を腐食させたり、また、腐食した金属成分による被処理品の再汚染、処理容器の寿命の短縮化、メンテナンスの困難性等の問題点を生じさせていた。
【0009】
上記に鑑み、本発明は、高純度化を完全なものとし、かつメンテナンスが容易な黒鉛部材の高純度化処理炉を提供することを目的とするものである。
【0010】
【課題を解決するための手段】
上記目的を達成するための本発明の黒鉛部材の高純度化処理炉は、処理容器と、前記処理容器内の中央部に配した被処理品を収容する黒鉛炉部材と、前記被処理品を加熱するためのヒーターと、ハロゲンガス導入口と、ハロゲンガス排気口とを有する黒鉛部材の高純度化処理炉において、前記黒鉛炉部材は多孔質であり、その内側表面に熱分解炭素の緻密な被膜を形成したものであることを特徴とする。
【0011】
上記熱分解炭素の被膜は、通常用いられる各種化学蒸着法(CVD)により行うことができる。例えば、黒鉛炉部材の表面を、800〜2600℃に加熱し、ここに炭化水素又はハロゲン化炭化水素を、水素ガス共存下で接触させ、多数の気孔を有する黒鉛炉部材表面に熱分解炭素の緻密な層を形成させる。
【0012】
上記反応は、常圧又は減圧下に行うことができるが、熱分解炭素の均一性、平滑性等をよくするためには、減圧下に行うことが好ましく、特に300Torr以下で行うことが好ましい。
【0013】
上記熱分解炭素の被膜の厚みは、10〜200μmが好ましい。10μm未満であると、充分な不浸透性を得ることができず、200μmを超えると、表面にクラックを生じる可能性が大きい。
【0014】
【作用】
熱分解炭素の緻密な被膜は、強い気体不浸透性を有する。本発明の黒鉛部材の高純度化処理炉の中央部に配した黒鉛炉部材が、その内側表面に熱分解炭素の被膜を形成したものであることにより、多孔質体である黒鉛炉部材の表面に強い気体不浸透性が付与される。
【0015】
これにより、被処理品から除去された不純物が上記黒鉛炉部材内部へ吸着することがなくなる。従って、炉内雰囲気の汚染がなくなり、被処理品の高純度化が更に完璧になる。また、上記黒鉛炉部材からのハロゲンガスの透過がなくなる。従って、処理容器の腐食や腐食した金属成分による被処理品の再汚染の心配がなくなり、処理容器の寿命の短縮化もなくなる。
【0016】
本発明の高純度化処理炉においては、黒鉛炉部材の外周にヒーターを配置した場合は、ヒーターからの熱が効率よく黒鉛炉部材内部の被処理品に伝わる必要がある。そのためには、黒鉛炉部材は、熱伝導が良いものが好ましい。本発明においては、黒鉛炉部材はその内側表面だけが熱分解炭素の被膜で覆われることになるので、上記の熱伝導は良好な状態のまま保たれ、しかも上述した本発明の特有の効果を喪失することがない。
【0017】
【実施例】
以下に実施例を掲げて本発明を詳しく説明する。図1は、本発明の黒鉛部材の高純度化処理炉の1例を示す。黒鉛部材の高純度化処理炉全体は、処理容器11の内部に配置されている。被処理品14は、黒鉛炉部材13の内部に収容される。黒鉛炉部材13の内側表面13aは、本発明の熱分解炭素の被膜が形成されている。ヒーター12からの熱は、熱伝導よく被処理品14に伝えられる。黒鉛炉部材13の内部には、ハロゲンガス導入口15からハロゲンガスが供給され、このハロゲンガスがハロゲンガス排気口16から排気される。
【図面の簡単な説明】
【図1】本発明の黒鉛部材の高純度化処理炉の断面図。
【符号の説明】
11 処理容器
12 ヒーター
13 黒鉛炉部材
13a 黒鉛炉部材の内側表面
14 被処理品[0001]
[Industrial application fields]
The present invention relates to a graphite member high purification furnace for obtaining a high purity graphite member.
[0002]
[Prior art]
Graphite members are attracting attention as materials for highly industrially important members such as semiconductor devices and nuclear reactor devices because of their excellent heat resistance, chemical resistance, thermal conductivity, and mechanical strength at high temperatures. ing.
In recent years, it has further been found that it has many utility values in the fields of silicon single crystal pulling apparatus members, epitaxial growth susceptors, plasma CVD boards, etching electrodes, and the like. However, extremely high purity is required for the graphite members used in these applications.
[0003]
As a method for purifying a graphite member for obtaining a high-purity graphite member, for example, a graphite furnace member is disposed in a high-purification treatment furnace, and a packing powder such as coke is placed in a gap between the furnace wall and the graphite furnace member. A method of energizing the electrodes on both side walls while flowing halogen gas from one side of the furnace side wall, installing a tight box made of graphite furnace members in the processing vessel, and introducing the halogen gas while heating this For example, Japanese Laid-Open Patent Publication Nos. 63-248703 and 63-79759 disclose methods for performing forced exhaust.
[0004]
However, in these methods, it takes a long time, there is inconvenience in the work environment, the amount that can be processed at one time is limited, the processing of large items is impossible, there are problems in maintenance, There were many problems.
[0005]
Japanese Patent Application Laid-Open No. 6-298510 discloses a technique that enables a large-sized product to be processed by a method of heating the inside of a sealed container with a heater without providing a tight box in the high-purification processing furnace. However, the high purity of the treated graphite member is not different from the conventional method and still has a problem.
[0006]
[Problems to be solved by the invention]
In the conventional furnace for purifying graphite members, there is a certain limit to the purification of graphite members. Since the graphite constituting the furnace member of these high-purity treatment furnaces is porous, impurities removed from the product to be treated during the high-purification treatment are adsorbed by the furnace members in the furnace during cooling after the treatment. The In the next processing, the inside of the high-purity processing furnace becomes high temperature again, so that the adsorbed impurities are released to contaminate the furnace atmosphere.
[0007]
By repeatedly using such a high-purity treatment furnace, accumulation of adsorbed impurities occurs, and the degree of contamination of the atmosphere in the furnace is further increased, which makes it possible to complete the removal of impurities from the product to be treated. Will gradually decline. A certain limit of the above-mentioned high purity has existed for this purpose.
[0008]
Furthermore, in addition to the above problems, if the furnace material in the furnace is porous, the halogen gas introduced into the furnace passes through the porous furnace member, corrodes the processing vessel, or corrodes. Problems such as re-contamination of products to be treated with metal components, shortening of the life of processing containers, difficulty in maintenance, and the like have occurred.
[0009]
In view of the above, it is an object of the present invention to provide a high-purity treatment furnace for a graphite member that is highly purified and easy to maintain.
[0010]
[Means for Solving the Problems]
In order to achieve the above object, a graphite member high-purity processing furnace of the present invention comprises a processing vessel, a graphite furnace member that accommodates a processed product disposed in a central portion of the processing vessel, and the processed product. In a graphite member high-purification treatment furnace having a heater for heating, a halogen gas inlet, and a halogen gas exhaust port, the graphite furnace member is porous and has a dense pyrolytic carbon on its inner surface. A film is formed.
[0011]
The pyrolytic carbon film can be formed by various commonly used chemical vapor deposition (CVD) methods. For example, the surface of the graphite furnace member is heated to 800 to 2600 ° C., and hydrocarbon or halogenated hydrocarbon is brought into contact therewith in the presence of hydrogen gas, and the surface of the graphite furnace member having a large number of pores is made of pyrolytic carbon. A dense layer is formed.
[0012]
The above reaction can be carried out under normal pressure or reduced pressure, but in order to improve the uniformity and smoothness of pyrolytic carbon, it is preferably carried out under reduced pressure, particularly preferably 300 Torr or less.
[0013]
The thickness of the pyrolytic carbon coating is preferably 10 to 200 μm. If it is less than 10 μm, sufficient impermeability cannot be obtained, and if it exceeds 200 μm, there is a high possibility of causing cracks on the surface.
[0014]
[Action]
The dense coating of pyrolytic carbon has a strong gas impermeability. The surface of the graphite furnace member, which is a porous body, is obtained by forming a pyrolytic carbon film on the inner surface of the graphite furnace member disposed in the center of the graphite member purification furnace of the present invention. A strong gas impermeability is imparted.
[0015]
Thereby, impurities removed from the article to be processed are not adsorbed inside the graphite furnace member. Therefore, there is no contamination of the furnace atmosphere, and the purification of the product to be processed becomes more perfect. Further, the permeation of halogen gas from the graphite furnace member is eliminated. Accordingly, there is no concern about the corrosion of the processing container or the recontamination of the object to be processed due to the corroded metal component, and the service life of the processing container is not shortened.
[0016]
In the high-purification processing furnace of the present invention, when a heater is disposed on the outer periphery of the graphite furnace member, it is necessary to efficiently transfer the heat from the heater to the product to be processed inside the graphite furnace member. For that purpose, the graphite furnace member preferably has good heat conduction. In the present invention, only the inner surface of the graphite furnace member is covered with the pyrolytic carbon film, so that the above heat conduction is maintained in a good state, and the above-mentioned characteristic effect of the present invention is obtained. There is no loss.
[0017]
【Example】
Hereinafter, the present invention will be described in detail with reference to examples. FIG. 1 shows an example of a graphite member purification furnace of the present invention. The entire graphite member purification furnace is disposed inside the
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of a graphite member purification furnace of the present invention.
[Explanation of symbols]
DESCRIPTION OF
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP09444295A JP3779348B2 (en) | 1995-03-27 | 1995-03-27 | High purity furnace for graphite members |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP09444295A JP3779348B2 (en) | 1995-03-27 | 1995-03-27 | High purity furnace for graphite members |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH08259209A JPH08259209A (en) | 1996-10-08 |
JP3779348B2 true JP3779348B2 (en) | 2006-05-24 |
Family
ID=14110384
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP09444295A Expired - Lifetime JP3779348B2 (en) | 1995-03-27 | 1995-03-27 | High purity furnace for graphite members |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3779348B2 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4926444B2 (en) * | 2004-10-21 | 2012-05-09 | 新日鐵化学株式会社 | Graphite material high purity treatment furnace and graphite material high purity treatment method |
DE602004010538T2 (en) * | 2004-12-15 | 2008-11-13 | Sgl Carbon Ag | Durable graphite bodies and process for their preparation |
JP6363909B2 (en) * | 2014-08-11 | 2018-07-25 | イビデン株式会社 | Muffle, firing furnace, and muffle manufacturing method |
CN110483048A (en) * | 2019-09-12 | 2019-11-22 | 北京动力机械研究所 | A kind of graphite heat storage and preparation method thereof |
JP7133578B2 (en) * | 2020-03-18 | 2022-09-08 | 中外炉工業株式会社 | clean oven |
-
1995
- 1995-03-27 JP JP09444295A patent/JP3779348B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH08259209A (en) | 1996-10-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6844273B2 (en) | Precleaning method of precleaning a silicon nitride film forming system | |
US5884917A (en) | Thermal processing apparatus | |
US5131842A (en) | Corrosion resistant thermal treating apparatus | |
JPH06206718A (en) | Extra-high purity silicon carbide and high temperature semiconductor processing device produced by said silicon carbide | |
EP3476803B1 (en) | Polycrystalline silicon rod and method for producing same | |
JP3779348B2 (en) | High purity furnace for graphite members | |
US4547404A (en) | Chemical vapor deposition process | |
JP3929140B2 (en) | Corrosion resistant member and manufacturing method thereof | |
JP2002115064A (en) | Method for cleaning cvd system for graphite nanofiber thin film deposition | |
US3635757A (en) | Epitaxial deposition method | |
JPH0586476A (en) | Chemical vapor growth device | |
JPH0817746A (en) | Heater | |
JP2002037684A (en) | Regenerating method of silicon carbide-coated graphite element and silicon carbide-coated graphite element by the method | |
JPH09229587A (en) | Cooling/heating device for semiconductor processing liquid | |
JPH0331479A (en) | Heat treatment | |
JPH0494117A (en) | Vapor growth device | |
JPH03150288A (en) | Apparatus for heating polycrystalline silicon | |
JP4373723B2 (en) | Cylinder type vapor phase growth equipment | |
JP5370209B2 (en) | Manufacturing method of silicon epitaxial wafer | |
JPH0471880B2 (en) | ||
JP2714580B2 (en) | Chemical vapor deposition method and chemical vapor deposition apparatus | |
KR0155381B1 (en) | Treating apparatus | |
JP2686465B2 (en) | Heat treatment equipment | |
JPH1135391A (en) | Silicon carbide-coated susceptor | |
JPH01312833A (en) | Vapor phase growth device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20050113 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20050920 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20051121 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20060228 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20060302 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100310 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100310 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110310 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110310 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130310 Year of fee payment: 7 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140310 Year of fee payment: 8 |
|
EXPY | Cancellation because of completion of term |