JP3394924B2 - Frequency conversion circuit - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a frequency conversion circuit (hereinafter referred to as a mixer) used in a microwave band radio device.
Related to.

[0002]

2. Description of the Related Art There are a receiving mixer and a transmitting mixer as mixers used in radio equipment. The reception mixer is a circuit that adds a weak high-frequency reception signal (RF signal) and a local oscillation signal (LO signal) to a non-linear element and extracts the difference frequency signal as an intermediate frequency signal (IF signal). It is called a down-converter because it is converted into an IF signal of low. The transmission mixer is a circuit that adds an IF signal and a LO signal to a non-linear element and extracts a sum frequency signal or a difference frequency signal thereof as an RF signal, and is generally called an up converter.

The mixer is the first or second RF stage of the radio.
It is the second most important circuit that affects the operation of the entire radio, and its performance is evaluated by dynamic range, conversion loss, bandwidth, noise figure (NF), third-order distortion, and the like. Furthermore, in mobile communication in recent years, downsizing of portable devices,
Along with the reduction in power consumption, mixers are required to have smaller integration and lower power consumption in addition to the above performance improvements.

Generally, when a mixer is configured, there is a single-ended mixer (SEM) using one nonlinear element, for example, one diode. However, noise included in a local oscillation signal is reduced or high-order mixing is performed. Balanced mixers (BM: balanced mixers) that use multiple diodes are widely used for applications that place importance on distortion characteristics that suppress the level of modulation components, and are used for wireless devices that aim for low noise and low power consumption. A single balanced mixer (SBM: single balanced mixer) using two passive elements (passive devices) or a double balanced mixer (DBM: double balanced mixer) using four passive elements is widely used.

FIG. 6 is a block diagram of a conventional single balanced mixer (SBM). In the figure, 1 is 0 / π
The converter 2 is a demultiplexer, and D ₁ and D ₂ are non-linear passive elements, for example, Schottky barrier diodes (SBD). 0
The / LO converter 1 converts the input LO signal into LO signals of 0-phase and π-phase, which are opposite in phase to each other, and outputs the LO signals, which are applied to both ends of _two diodes D ₁ and D ₂ connected in series. The RF signal input from the duplexer 2 is input to the midpoint of the two diodes connected in series (neutral point of the balanced circuit), mixed by the non-linearity of the diodes, and the difference obtained from the midpoint is detected. The frequency IF signal is taken out by the demultiplexer 2.

FIG. 7 is a concrete circuit diagram of a conventional single balanced mixer (SBM). The 0 / π converter 1 is composed of a winding transformer 11, and the demultiplexer 2 is an HPF (high pass filter) 21. And LPF (low-pass filter) 22. However, with this configuration, there is the winding transformer 11, so that integration cannot be realized.

FIG. 8 is another concrete circuit example of the conventional SBM. In order to realize integration, the 0 / π converter 1 is composed of a distributed constant circuit 12, a so-called Marchand balun 180 ° phaser. It is a thing. However, in principle, this phase shifter is basically constructed with a transmission line having a length of ½ wavelength and ¼ wavelength, and therefore, when integrated, the chip size is inevitably expanded. Therefore, it is effective in the frequency band of 5 GHz or more, but there is a problem that the size reduction effect is small in the 1 to 2 GHz band.

FIG. 9 shows a conventional double balanced mixer (D
An arrangement illustration of BM), in which using four diodes _{D 1, D 2, D 3} , D 4 as a nonlinear element. Although the distortion characteristic is further improved as compared with the single balanced mixer (SBM) shown in FIG. 7, there is a problem that the number of elements increases.

[0009]

As is widely known, a nonlinear passive element for a mixer is a diode having a small output distortion product when used as a mixer and having a high sensitivity, that is, a low forward direction. bias voltage (V _F) the diode current (I _D) · silicon having a flow liable to nonlinear Schottky barrier diode (hereinafter, referred to as SBD)
Has been widely adopted, and is widely used as a frequency conversion circuit (passive mixer) having a small size and a passive element excellent in distortion characteristics in each device of mobile communication and microwave band communication.

Shots commonly used in mixers
The Q barrier diode SBD is a
A specific current I_DVoltage V_FDepending on the characteristics,
It is roughly divided into the following three stages. However, here,
Bias voltage V corresponding to the height of the rear_FThe "threshold"
Indicate.   Low threshold (low barrier diode (LBD)):
I_D= 1-2 mA / V _F= 0.2V   Medium threshold (medium barrier diode (MB
D)): I_D= 1mA / V_F= 0.3-0.5V   High threshold (high barrier diode (HBD)):
I_D= 1mA / V_F= 0.6 to 0.8V

The SBDs thus divided are used properly according to the injection power of the local signal and the value of the intermodulation distortion when they are used in the mixer. For example, the LBD has a relatively low level of local injection power (0 to +
It is widely used for general mobile communication terminals because of its excellent distortion characteristics of 3 dBm). MB of
D is a medium level local injection power (+4 to +10 dB).
m), a high distortion characteristic is obtained, so that it is widely used for in-vehicle devices for mobile communication. Since the HBD is used by applying a high level of local injection power (+10 to +20 dBm) for the purpose of obtaining an extremely high distortion characteristic, a base station device for mobile communication and a relay device of a frequency conversion system are used. In some cases, a plurality of diodes are further connected in series to be used as a mixer having higher distortion characteristics.

In the conventional passive mixer, the above-described highly sensitive Schottky barrier diode (SBD) made of silicon with a low threshold is applied as a non-linear element, and the distortion is excellent at a relatively low level of local injection power. The characteristics are obtained. On the other hand, recently, high-frequency millimeter-wave and quasi-millimeter-wave band single-ended mixers (SEM)
Although gallium arsenide Schottky barrier diodes are widely used as a general-purpose integrated circuit,
High cost and many difficulties with other requirements LS
I conversion is difficult.

Therefore, in order to reduce the size of a portable device in mobile communication, an active mixer using an active element which can be integrated while satisfying a required distortion performance, in contrast to the above passive mixer using a passive element. Has been proposed, and an example thereof is a mixer (mixer) using an analog multiplier called Gilbert Cell, which is widely used in general.

However, the active mixer by Gilbert cell is a double-balanced mixer (DBM) and has an advantage that the conversion gain is positive (plus), but distortion improvement and low power consumption have contradictory characteristics. There is a problem that the distortion characteristics are deteriorated if power consumption is pursued, and the power consumption is increased if the distortion characteristics are prioritized. Also, the noise figure is large, and due to the Gilbert cell configuration, the noise source is doubled (3 dB
However, it is difficult to obtain a noise figure of one digit (10 dB) or less, and it is extremely difficult to realize integration of a low noise mixer.

As described above, when integrating the mixer, a balanced mixer (balanced mixer) is preferable because it suppresses local oscillation noise and has good distortion characteristics. However, regardless of single balance (single balanced type) / double balance (double balanced type), the configuration of the local signal injection circuit is one problem of integration. That is, the conventional balanced mixer needs a 0 / π converter as a local signal injection circuit to obtain two signals of 0 phase and π phase whose phase difference is π in principle. As shown in FIG. 7, the LC lumped constant element 11 may be used, or
The distributed constant line 12 is used as shown in FIG. However, if both are integrated, the chip size will increase,
High cost and little effect of integration. The application development of the integrated circuit exhibits umami in the frequency band of 5 to 10 GHz or more in relation to the wavelength, but the integration effect is small in the target band of 1 to 2 GHz for the time being.

The small-scale integration satisfying the performance of low noise and low distortion under the condition of low power consumption of the front end of the receiver is as follows.
"LNA (Low Noise Amplifier), which constitutes the front end,
It depends on how to configure the reception mixer of the "down converter (reception mixer) and the intermediate frequency amplifier of the subsequent stage". The biggest problem is that the Schottky barrier diode used as the non-linear element of the receiving mixer cannot be integrated with other constituent elements in the same manufacturing process.

An object of the present invention is to avoid bottleneck, that is, 0/0 in the prior art when integrating a mixer in the 1 to 2 GHz band.
It is to overcome the problems such as small integration of π converter and special manufacturing process of barrier of Schottky barrier diode. The selection and configuration of nonlinear elements and the circuit configuration of mixer are improved and integrated by the same manufacturing process. It is to provide a mixer capable of Furthermore, the conversion gain, which is a bottleneck of the passive mixer, is changed from the negative region to the positive region, that is, from the attenuation circuit to the amplification circuit, and a noiseless negative feedback amplifier with low noise figure, low power consumption, and low distortion is combined into an IC. The purpose is to provide a mixer that can.

[0018]

A frequency conversion circuit according to the present invention
Includes a 0 / [pi converter for balanced output from the two terminals of the pair with respect to converting the station unit oscillator signal into two opposite phase of the local oscillation signal to one another the ground, gallium arsenide-based semiconductor or silicon-based bipolar semiconductor Of the three terminals of one of the three-terminal transistors, the gate electrode or the base electrode is used as one terminal, and the short-circuit electrode in which the source electrode and the drain electrode are short-circuited or the short-circuit electrode in which the emitter electrode and the collector electrode are short-circuited is the other. A non-linear element, which is a two-terminal pseudo diode that operates as a passive element serving as a terminal of the two non-linear elements, is connected in series, and a series circuit of the two non-linear elements connected between the two terminals; A demultiplexer for inputting a high frequency signal to a neutral point, extracting a difference frequency signal between the high frequency signal and the local oscillation signal from the neutral point, and demultiplexing and outputting the signal, and the 0 / π converter Is connected between the two terminals forming a pair to form a return path between the high frequency signal input from the demultiplexer to the neutral point and the difference frequency signal to be extracted, and forward from the outside to the two two-terminal pseudo diodes. It is composed of an integrated circuit in which a low impedance circuit for applying a bias voltage is integrated.

Further, it cascaded to the difference frequency signal output terminal of the demultiplexer of the frequency converter, between the ground and the source terminal of the source-grounded amplifier of gallium arsenide based semiconductor transistors or silicon-based bipolar junction semiconductor transistor, An amplifier having an inductance connected between the emitter terminal of the grounded-emitter amplifier and the ground as a negative feedback circuit may be further integrated into the integrated circuit.
You can Alternatively, it is cascade-connected to the difference frequency signal output terminal of the duplexer of the frequency conversion circuit , and is connected between the gate terminal of the gate-grounded amplifier of the gallium arsenide-based semiconductor transistor and the ground, or the base-grounded amplifier of the silicon-based bipolar junction semiconductor transistor. Further integrating an amplifier having a negative feedback circuit with a capacitance connected between the base terminal and the ground of the integrated circuit into the integrated circuit.
You can

Further, the frequency conversion circuit of the present invention converts the local oscillation signal into two local oscillation signals having mutually opposite phases and outputs the balanced output from two terminals paired with the ground.
Converter and gallium arsenide based semiconductor or silicon based
One of the three-terminal transistors of the polar semiconductor
Between the drain terminal and the source terminal of the three terminals or 1
Passive element utilizing the non-linearity between the connector and emitter terminals
Non-linear element that is a three-terminal pseudo diode that operates as a child
Two children are connected in series, a series circuit of the connected the two nonlinear element between the two terminals, and inputs the RF signal to the neutral point of the series circuit, said a neutral point demultiplexer for extracting and demultiplexing output a difference frequency signal of the high frequency signal and the local oscillation signal, is composed of three terminals pseudo diode utilizing nonlinearities between between source over scan terminal or collector terminal and the emitter terminal , A gate for setting the operating range of the passive element at the gate or base of the three-terminal transistor.
Integration that integrates the bias voltage from the outside
It is composed of a circuit.

Further, it cascaded to the difference frequency signal output terminal of the demultiplexer of the frequency converter, between the ground and the source terminal of the source-grounded amplifier of gallium arsenide based semiconductor transistors or silicon-based bipolar junction semiconductor transistor, An amplifier having an inductance connected between the emitter terminal of the grounded-emitter amplifier and the ground as a negative feedback circuit may be further integrated into the integrated circuit.
You can Alternatively, it is cascade-connected to the difference frequency signal output terminal of the duplexer of the frequency conversion circuit, and is connected between the gate terminal of the gate-grounded amplifier of the gallium arsenide-based semiconductor transistor and the ground, or the base of the transistor of the silicon-based bipolar junction semiconductor transistor. An amplifier using a capacitance connected between the base terminal of the grounded amplifier and the ground as a negative feedback circuit is further added to the integrated circuit.
Can be integrated .

[0022]

BEST MODE FOR CARRYING OUT THE INVENTION The mixer of the present invention is used as a non-linear element in any one of different processes such as a gallium arsenide compound semiconductor (GaAs) manufacturing process or a silicon bipolar semiconductor manufacturing process. By using the transistor of the manufacturing process of, the requirements for integration are satisfied. For example, G
Source (S) of aAsFET (field effect transistor)
An electrode and a drain (D) electrode are short-circuited in a semiconductor integrated circuit manufacturing process, and a two-terminal pseudo diode having a short-circuited electrode terminal and a gate (G) electrode terminal is used as a mixer diode.
By using the same process as the integrated circuit manufacturing process for other elements such as amplifiers, it is possible to integrate a high-performance and low-cost mixer.

Further, it is a two-terminal pseudo diode which operates as a passive element in which two electrodes of a GaAs transistor or a bipolar junction transistor are short-circuited.
The "threshold" of the nonlinear element , that is, the optimum value of the forward bias voltage for obtaining a mixer output with low applied power and low distortion is the same as that of the above-mentioned high barrier diode (HBD) due to the structure of the transistor. Since the current sensitivity is similar to that of the current sensitivity, by operating the forward bias voltage (current), the performance can be approximated to that of M (medium) BD or L (low) BD. it can. Therefore, when used in a mixer, it is possible to set the conversion loss and distortion characteristics to the optimum state under the conditions of the required local injection power, and to obtain characteristics equivalent to those of a conventional mixer using a silicon Schottky barrier diode. Therefore, a low power consumption mixer can be realized as a whole.

Further, the mixer of the present invention with a negative feedback amplifier using a noiseless resistor not only converts the negative conversion gain, which is the greatest drawback of the passive mixer, into a positive conversion gain, that is, the attenuation mixer is used as a gain mixer. It is possible to realize integration of a single balanced mixer (SBM) that combines low power consumption, low distortion, and low noise amplifiers.

[0025]

FIG. 1 is a block diagram of a mixer as an object of the present invention, which is an example of a down converter. In the figure,
01 indicates a single function of the mixer, 02 indicates a single mixer 01
Intermediate frequency amplifier (IF
A). 03 is a single mixer 01 and a subsequent IFA02
Is a composite mixer that combines and integrates.

FIG. 2 is a block diagram of the first embodiment of the present invention, which is an example of a single-balanced mixer (single-balanced mixer). In the figure, 1 is a 0 / π converter and 2 is a demultiplexer. GaAs FETs 3 and 4 are non-linear elements.
It is a two-terminal pseudo diode obtained by short-circuiting the drain (D) electrode and the source (S) electrode of (three-terminal transistor). Reference numeral 5 constitutes a return path for the RF signal applied from the demultiplexer 2 to the connection point (neutral point) of the two 2-terminal pseudo diodes 3 and 4 and the return path of the mixing output IF signal extracted from the neutral point, and is connected in series. L and C for applying a predetermined bias voltage V _B to the two two-terminal pseudo diodes 3 and 4
Is a low impedance circuit. The capacitor 53 acts as a DC block for a given bias voltage V _B. The coils 51 and 52 are resonance coils for the local frequency signal (LO signal).

The resistor 54 switches the two two-terminal pseudo-diodes 3 and 4 alternately so that the injected local power is efficient, and the "threshold" at which the conversion loss and the distortion characteristic become the best, that is, the bias voltage V _B. Bias resistor for setting.

By applying local powers of opposite phases to the two ends of the two two-terminal pseudo diodes 3, 4 connected in series to the two output terminals of the 0 / π converter 1 which are paired with respect to the ground. The two pseudo diodes 3 and 4 are switched, and the frequency mixing operation is performed by the conversion conductance (g _c ) of the diodes. That is, the radio frequency (R
The F) signal and the local frequency (LO) signal are mixed to obtain an intermediate frequency (IF) signal.

FIG. 3 is a block diagram showing a second embodiment of the present invention.
And is another example of a single balanced mixer. 6 and 7 are non-wire
As a shaped element, the gate (G) of GaAs FET is
Pressure V _BFix with, and pseudo between drain (D) and source (S)
GaAs FET 3 terminal pseudo diode as a similar diode
It is The same parts as those in FIG. 2 are designated by the same reference numerals. Miki
The singing operation is essentially the same as in the first embodiment described above.
It

FIG. 4 operates as a passive element used in the present invention.
It is a figure which compares the structural example of the nonlinear element which does with the conventional example . (A) is a silicon Schottky barrier diode (SBD) used in a conventional mixer. A is an anode and C is a cathode. (B) is a two-terminal pseudo diode in which two of the three terminal electrodes (drain D and source S) of the gallium arsenide FET are short-circuited to form two terminals. This two-terminal pseudo diode
It is used in the first embodiment of the present invention shown in FIG. (C) is a two-terminal pseudo diode in which two of the three terminal electrodes (collector C and emitter E) of the silicon bipolar junction transistor are short-circuited to form two terminals. This two-terminal pseudo diode is the above-mentioned GaAsFE
It can be used in place of the T2 terminal pseudo diode. (D) is a three-terminal pseudo diode in which the gate (G) of the three-terminal GaAsFET is fixed at a predetermined voltage V _B and the non-linear characteristic between the drain (D) and the source (S) is used.
This three-terminal pseudo diode is used in the second embodiment of the present invention shown in FIG. (E) fixes the base (B) of a three-terminal silicon bipolar junction transistor at a predetermined voltage V _B ,
This is a three-terminal pseudo diode that utilizes the non-linear characteristic between the collector (C) and the emitter (E). This three-terminal pseudo diode can be used in place of the above three-terminal pseudo diode of GaAsFET.

FIG. 5 is a concrete circuit configuration diagram showing a third embodiment of the present invention, which is 0 / .pi. Of the first embodiment shown in FIG.
The internal specific example of the converter 1 and the internal specific example of the demultiplexer 2 are shown. Further, although the two two-terminal pseudo diodes 3 and 4 and the low impedance circuit 5 are the same, a noiseless intermediate frequency amplifier (IF) is connected to the IF output terminal of the duplexer 2.
A) 8 is cascaded so that it can be integrated.

In order to facilitate the integration of the 0 / π converter 1, the drain (D) which is the operating principle of the transistor 13 is used.
Focusing on the phase difference between the source and the source (S) being π (180 °), a so-called active balun (active balanced circuit) is used as the 0 / π phase converter 1. When the local signal power is input to the active balun, the local signals of opposite phases are injected into the non-linear element, that is, the two 2-terminal pseudo diodes 3 and 4 connected in series.

Coil 14, 15 and capacitor 16, 1
Reference numeral 7 is an L, C matching circuit for increasing the power efficiency of the active balun and ensuring the 0 / π phase. The coils 51 and 52 of the low impedance circuit 5 are F
The capacitance component of the ET transistor 13 is set to cause parallel resonance with the local oscillation frequency.

The demultiplexer 2 includes HPFs 21 and LPs having L and C elements for demultiplexing an RF signal input and an IF signal output.
The element constant is set so as to satisfy the matching condition and minimize the conversion loss for each signal. Reference numeral 9 is a DC blocking capacitor for blocking the forward bias current.

In the noiseless intermediate frequency amplifier (IFA) 8, 81 is a FET, 82 and 83 form a matching circuit of L and C with respect to the load, and 85 adjusts the bias voltage supplied to the gate (G). It is a bias resistor. A silicon bipolar junction transistor may be used instead of the GaAs FET 81.

The inductance 84 is the low noise of the present invention.
It is a device that characterizes a high-intercept, low-power-consumption composite mixer, and acts as a noiseless resistor having an ohmic dimension by the product of the intrinsic g _m and C _gs of the transistor 81 and the inductor 84. This inductance 8
Reference numeral 4 serves as a current feedback circuit for the load and constitutes a negative feedback amplifier.

Generally, the negative feedback amplifier has a significantly improved distortion characteristic due to its negative feedback amount (NFB).
In the case of NFB by resistance feedback using a resistor between the source S of T and the ground, a signal current flows in the feedback resistor and Joule heat loss occurs, and the signal power is consumed by this amount and the noise figure of the amplifier is increased. There is a problem of deterioration, and a large NFB cannot be set even if the noise figure is lowered.

Therefore, the NFB of the FET 81 is converted into an equivalent resistor (g _m · L / C _gs ≈2πF) by the inductance 84.
_t · L), it becomes a “noiseless register” and the noise figure does not deteriorate due to NFB.
Therefore, the operation range of the linear region is widened, the integration of the amplifier composite mixer with low noise and high intercept is
It has an excellent feature that it can be realized under the condition of low power consumption.

A capacitance may be used instead of the inductance 84. In that case, in the case of GaAs FET, a capacitor may be inserted between the gate of the grounded ground amplifier and the ground. In the case of a silicon bipolar transistor, a capacitor is inserted between the base of the base-grounded amplifier and the ground.

The outline of the data showing the total effect when the composite mixer having the configuration of the third embodiment shown in FIG. 5 of the present invention is made into an IC is as follows. That is, the power consumption including the 0 / π converter 1 in the local signal input section, so-called active balun, is approximately 30 mW (≈10 mA × 3 V), the noise figure is one digit (NF _MAX <10 dB), and the conversion gain is 10 dB.
(G _c > 14 dB) The output third-order intermodulation intercept, which is an index of the third-order intermodulation distortion, has two digits (OIP ₃ > 20 dB).
m), which is roughly 1/3 (5d) in noise figure as compared with the conventional active mixer IC by Gilbert cell.
B), it is possible to realize an improvement of 10 times (10 dB) in the output third-order intercept and 1/3 in the power consumption. Table 1 below is an example comparative data table showing the above improvements.

[0041]

[Table 1]

Although the above embodiments of the present invention have been described as down converters of the receiving circuit of the portable device, the mixer is also used for transmission, and is not limited to the portable device, and the on-vehicle radio device and the base station transmitter are not limited thereto. Needless to say, similar effects can be obtained by integrating the up-converter of the transmission circuit such as the above with the same configuration as the present invention. Further, in the case of a transmission circuit, distortion characteristics may be more important than low power consumption, so a double balanced mixer (DBM: double balanced mixer) using four or more nonlinear elements is useful.

[0043]

As described in detail above, the following effects can be obtained by implementing the present invention. (1) GaAs without using Schottky barrier diode
The single-balanced mixer is composed of FETs or transistors of the same process of silicon bipolar as mixing diodes, so it is extremely easy to integrate. When integrated, it is small, low distortion, low conversion loss, low noise, and low power consumption. ， All the advantages of low cost can be satisfied. (2) The optimum value for reducing distortion when the local injection power is at a low level can be set by externally operating the forward bias voltage (current). (3) Since the noiseless negative feedback amplifiers are cascaded in the subsequent stage of the mixer alone to obtain a positive conversion gain, large-scale integration is easy, miniaturization, and low-cost receiver front-end integration. As a circuit, it is extremely effective in practice.

[Brief description of drawings]

FIG. 1 is a block diagram of a mixer targeted by the present invention.

FIG. 2 is a configuration diagram showing a first embodiment of the present invention.

FIG. 3 is a configuration diagram showing a second embodiment of the present invention.

FIG. 4 shows a configuration of a non-linear element used in the present invention and an example of a conventional element.
It is an explanatory diagram of the.

FIG. 5 is a specific circuit configuration diagram showing a third embodiment of the present invention.

FIG. 6 is a diagram showing a configuration example of a conventional single balanced mixer (SBM).

FIG. 7 is a specific circuit example diagram of a conventional SBM.

FIG. 8 is a diagram showing another specific circuit example of the conventional SBM.

FIG. 9 is a diagram showing a configuration example of a conventional double balanced mixer (DBM).

[Explanation of symbols]

01 mixer 02 IFA 03 Mixer with IFA 10 / π converter 2 demultiplexer 3,4 2-terminal pseudo diode 5 Low impedance circuit 6.7 3-terminal pseudo diode 8 Noiseless IFA 9 capacitors 11 winding transformer 12 Marchand Balun 180 ° Phaser 13 FET 14,15 coils 16 capacitors 21 HPF 22 LPF 51,52 coil 53 condenser 54 resistor 81 FET 82, 84 coils 83 Capacitor 85 resistor

─────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-3-160803 (JP, A) JP-A-10-163758 (JP, A) Fukukaihei 6-81126 (JP, U) International Publication 99/10756 (WO, A1) (58) Fields investigated (Int.Cl. ⁷ , DB name) H03D ^7/ 12-7/14

Claims (6)

(57) [Claims] 1. A 0 / π converter for converting a local oscillation signal into two local oscillation signals having opposite phases and balanced output from two terminals paired with a ground, and a gallium arsenide semiconductor or a silicon bipolar transistor. A short-circuit electrode in which the gate electrode or the base electrode of the three terminals of any one of the semiconductor three-terminal transistors is used as one terminal and the source electrode and the drain electrode are short-circuited or the emitter electrode and the collector electrode are short-circuited. Two non-linear elements, which are two-terminal pseudo-diodes that operate as passive elements with the other terminal of
A series circuit of the two nonlinear elements connected between two terminals, and a high frequency signal is input to a neutral point of the series circuit, and a difference frequency signal between the high frequency signal and the local oscillation signal is input from the neutral point. A demultiplexer for extracting and demultiplexing and outputting, and a difference frequency to be extracted between the demultiplexer and a high-frequency signal input to the neutral point from the demultiplexer, which is connected between two terminals forming a pair. A frequency constituted by an integrated circuit that integrates a low impedance circuit that forms a signal return path and externally applies a forward bias voltage for setting a required operating range of a passive element to the two two-terminal pseudo diodes. Conversion circuit. 2. A source of a gallium arsenide semiconductor transistor grounded between the source terminal and the ground of a gallium arsenide semiconductor transistor connected to the difference frequency signal output terminal of the duplexer of the frequency conversion circuit, or a silicon bipolar junction semiconductor transistor. amplifier for the inductance connected between an emitter terminal of the common emitter amplifier and the ground and the negative feedback circuit further frequency conversion circuit according to claim 1, characterized in that it has been added integrated in the integrated circuit. 3. A differential frequency signal output terminal of a demultiplexer of the frequency conversion circuit, which is cascade-connected to a gate terminal of a gallium arsenide semiconductor transistor grounded amplifier and ground, or a silicon bipolar junction semiconductor transistor. base amplifier for the capacitance which is connected to the negative feedback circuit between the base terminal of the grounding amplifier and the ground is further frequency conversion circuit according to claim 1, characterized in that it has been added integrated in the integrated circuit. 4. A 0 / π converter for converting a local oscillation signal into two local oscillation signals having mutually opposite phases and balanced output from two terminals paired with a ground, and a gallium arsenide semiconductor or a silicon bipolar transistor. Non-linear element that is a three-terminal pseudo diode that operates as a passive element utilizing non-linearity between the drain terminal and the source terminal and the one collector terminal and the emitter terminal among the three terminals of one of the three terminals of the semiconductor Of the two nonlinear elements connected in series and connected between the two terminals, and a high frequency signal is input to a neutral point of the series circuit, and the high frequency signal is input from the neutral point. A demultiplexer for extracting and demultiplexing a frequency difference signal between the signal and the local oscillation signal, and an operating range as the passive element is set in the gate or base of the three-terminal transistor Frequency conversion circuit constituted by an integrated circuit and means for supplying a bias voltage from an external integrated. 5. The source of the gallium arsenide semiconductor transistor is connected in series to the difference frequency signal output terminal of the duplexer of the frequency conversion circuit and is connected between the source terminal of the source grounded amplifier of the gallium arsenide semiconductor transistor and the ground, or of the silicon bipolar junction semiconductor transistor. 5. The frequency conversion circuit according to claim 4 , wherein an amplifier having an inductance connected between the emitter terminal of the grounded-emitter amplifier and the ground as a negative feedback circuit is additionally integrated in the integrated circuit. 6. The frequency conversion circuit and a differential frequency signal output terminal of a demultiplexer of the frequency conversion circuit are cascade-connected and are connected between a gate terminal and a ground of a gate-grounded amplifier of a gallium arsenide semiconductor transistor, or silicon. An amplifier using a capacitance connected between the base terminal of the base-grounded amplifier of the transistor of the system bipolar junction semiconductor transistor and the ground as a negative feedback circuit is further additionally integrated in the integrated circuit. 4. The frequency conversion circuit according to item 4 .