JP3203685B2 - Semiconductor device and manufacturing method thereof - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device, and more particularly to a method of manufacturing a semiconductor device having a vertical bipolar transistor and a lateral bipolar transistor, or a semiconductor device having a vertical bipolar transistor, a lateral bipolar transistor and an MIS capacitor.

[0002]

2. Description of the Related Art In a semiconductor device having a lateral bipolar transistor, hot carriers are Si-Si.
In order to prevent the characteristics of the lateral bipolar transistor from deteriorating due to an interface level or the like generated when breaking the bond of the hydrogen molecule existing at the O ₂ interface, for example, SiN is formed on a SiO ₂ film serving as a surface protection film. It is effective to do.

FIG. 7 is a cross-sectional view showing a state before an electrode is formed in such a method of manufacturing a semiconductor device. In the figure, a is a silicon oxide film for protecting a semiconductor substrate, and b is a silicon oxide film formed by LPCVD. An insulating film for stabilizing the characteristics of a lateral bipolar transistor, c is a polycrystalline silicon film, d is a silicon oxide film formed by CVD,
e is a resist mask for opening a window for taking out an electrode.

In a conventional semiconductor device having an insulating film for stabilizing characteristics, as shown in FIG. 7, an insulating film b for stabilizing characteristics of a lateral bipolar transistor is formed almost entirely, and an emitter of the lateral bipolar transistor is formed. The film b was selectively removed only in the electrode extraction region of the collector and the base and emitter formation portions of the vertical bipolar transistor. Therefore, the interlayer insulating film has a three-layer structure of SiO ₂ / SiN / SiO ₂ or Si.
It has a two-layer structure of O ₂ / SiN.

[0005]

Conventionally, an insulating film is etched by using a resist film e as a mask, and each electrode, that is, a base electrode of a lateral bipolar transistor, a collector extraction electrode, an emitter extraction electrode, and a vertical bipolar transistor. When extracting the base extraction electrode, the emitter extraction electrode, and the collector electrode, the emitter extraction electrode, base extraction electrode, and vertical bipolar transistor emitter extraction electrode and collector extraction electrode of a vertical bipolar transistor are the uppermost layers of the three-layer insulating film. Only the SiO ₂ film d needs to be removed by etching.

However, when taking out the collector electrode connected to the semiconductor substrate of the vertical bipolar transistor and the base electrode connected to the semiconductor substrate of the lateral bipolar transistor, the insulating films d, b and a having a three-layer structure are completely removed. To expose the surface of the semiconductor substrate. As described above, when the structure of the layer to be etched differs depending on the location, the etching is extremely difficult, and in many cases, good etching cannot be performed, and the defect rate increases. This is because it is extremely difficult to accurately monitor the thickness of a multilayer film in a fine region such as an electrode extraction region, and in order to etch a multilayer film, it is necessary to increase the etching time in consideration of variations in the film thickness. It is necessary to set it, but if you do so, the top layer Si
In the portion where only the O ₂ film d is removed, that is, in the base extraction electrode c and the emitter extraction electrode c of the vertical bipolar transistor, the emitter extraction electrode c and the collector extraction electrode c of the lateral bipolar transistor, a very excessive overetching is caused. This is because the thickness of the polycrystalline silicon film c becomes thin, which causes an increase in contact resistance and a contact failure.

The present invention has been made to solve such problems, and one object of the present invention is to provide a multi-layer insulating film for providing a characteristic stabilizing insulating film to protect the surface of a semiconductor substrate. Another object of the present invention is to provide a method for forming an insulating film for stabilizing the characteristics of a lateral bipolar transistor and to effectively utilize the film patterning process. It is in.

[0008]

According to a first aspect of the present invention, there is provided a semiconductor device having a vertical bipolar transistor and a lateral bipolar transistor, wherein a selectively formed silicon oxide film covering a surface of a semiconductor substrate is provided. A silicon nitride film selectively formed on the film and forming a multilayer insulating film with the silicon oxide film; and a silicon nitride film and the silicon nitride film on a base region of the lateral bipolar transistor. It has a multilayer insulating film, and the silicon nitride film is selectively formed so as not to be in contact with at least the base electrode of the lateral bipolar transistor and the collector electrode of the vertical bipolar transistor.

According to a second aspect of the present invention, in the method of manufacturing a semiconductor device having at least a vertical bipolar transistor and a lateral bipolar transistor on a semiconductor substrate, a collector region of the vertical bipolar transistor and the lateral bipolar transistor which are separated from each other. Forming a silicon oxide film on the entire surface of the semiconductor substrate having a base region formed on the surface thereof; forming a silicon nitride film on the silicon oxide film; A part of the base region of the lateral bipolar transistor remains except for the base electrode extraction region from which the base electrode is taken out, and at least a part of the collector region of the vertical bipolar transistor takes a collector electrode. Selectively etching so that the portion above the collector electrode extraction region does not remain, and etching the silicon nitride film and the silicon oxide film to form a base forming opening of the vertical bipolar transistor, the lateral bipolar transistor, and the like. Forming an opening for taking out the emitter electrode of the transistor and an opening for taking out the collector electrode; and forming the opening for forming the base of the vertical bipolar transistor and the taking out the emitter electrode of the lateral bipolar transistor on the silicon nitride film or the silicon oxide film. A base region of the vertical bipolar transistor to be formed and connected to the surface of the semiconductor substrate through an opening and an opening for taking out a collector electrode; a collector region of the lateral bipolar transistor; Forming a first semiconductor film containing an impurity of the same conductivity type as the emitter region, and selectively etching the first semiconductor film to form a base extraction electrode of the vertical bipolar transistor; Forming an emitter extraction electrode and a collector extraction electrode, forming a second silicon oxide film on the entire surface, exposing the semiconductor substrate to the second silicon oxide film and the first semiconductor film; Forming an opening for forming an emitter of the vertical bipolar transistor, forming a sidewall on an inner peripheral surface of the opening for forming the emitter, and forming an emitter region of the vertical bipolar transistor on the second silicon oxide film. Containing the same conductivity type impurities as the A step of forming a second semiconductor film connected to the surface of the semiconductor substrate through an opening for forming an emitter of the bipolar transistor, and an annealing process for forming a base forming opening of the vertical bipolar transistor on the semiconductor substrate; A base region of the vertical bipolar transistor having the same conductivity type as an impurity contained in the semiconductor film is provided at a portion in contact with the first semiconductor film through the opening for taking out an emitter electrode and the opening for taking out a collector electrode of the transistor. A portion of the emitter region and the collector region of the transistor which is in contact with the second semiconductor film through the emitter formation opening of the vertical bipolar transistor is provided with a vertical bipolar transistor having the same conductivity type as an impurity contained in the semiconductor film. Forming an emitter of the registers, and having a.

According to a third aspect of the present invention, there is provided a semiconductor device having at least a vertical bipolar transistor, a lateral bipolar transistor, and an MIS capacitor, wherein a selectively formed silicon oxide film covering a surface of a semiconductor substrate; A silicon nitride film which is selectively formed as an upper layer and partially constitutes a multilayer film with a silicon oxide film, such that the silicon oxide film forms a MIS opening on the MIS capacitor; The silicon nitride film is selectively removed, and the silicon nitride film comes into contact with the semiconductor substrate surface through the MIS opening.
Formed on the base region of the lateral bipolar transistor, the multilayer insulating film comprising the silicon oxide film and the silicon nitride film, wherein the silicon nitride film is formed of a lateral bipolar transistor. Is formed so as not to be in contact with at least the base electrode and the collector electrode of the vertical bipolar transistor.

According to a fourth aspect of the present invention, in the method of manufacturing a semiconductor device having at least a vertical bipolar transistor, a lateral bipolar transistor, and a MIS capacitor on a semiconductor substrate, the collector region of the vertical bipolar transistor separated from each other is provided. Forming a silicon oxide film over the entire surface of the semiconductor substrate on which a base region of the lateral bipolar transistor and a semiconductor region forming one electrode of the MIS capacitor are formed on a surface portion; and selecting the silicon oxide film. Forming a MIS opening for bringing a dielectric formed after the MIS capacitor into contact with the surface of the semiconductor substrate by etching, and forming a silicon nitride film on the silicon oxide film and the MIS opening. In part Forming the entire surface of the MIS capacitor in contact with the semiconductor substrate through an IS opening to form a dielectric of the MIS capacitor; and forming a part of the silicon nitride film on at least a base region of the lateral bipolar transistor. Then, the base electrode is taken out from the region where the base electrode is taken out, and is left as a dielectric in a portion in contact with the semiconductor substrate surface through the MIS opening. At least a part of the collector region of the vertical bipolar transistor is left. And selectively etching the silicon nitride film and the silicon oxide film so that the portion on the collector electrode extraction region from which the collector electrode is extracted does not remain, thereby forming the base of the vertical bipolar transistor by etching the silicon nitride film and the silicon oxide film. Opening, lateral above Forming an opening for taking out an emitter electrode and an opening for taking out a collector electrode of a polar transistor; and forming an opening for forming a base of a vertical bipolar transistor and taking out an emitter electrode of the lateral bipolar transistor on the silicon nitride film or the silicon oxide film. A first electrode connected to the surface of the semiconductor substrate through the first opening and the collector electrode take-out opening and containing impurities of the same conductivity type as the base region of the vertical bipolar transistor to be formed, and the collector region and the emitter region of the lateral bipolar transistor; Forming a semiconductor film of
By selectively etching the first semiconductor film, a base extraction electrode of the vertical bipolar transistor, an emitter extraction electrode, a collector extraction electrode of the lateral bipolar transistor, and the MIS
Forming the other electrode of the type capacitor, forming a second silicon oxide film on the entire surface, exposing the semiconductor substrate to the second silicon oxide film and the first semiconductor film, Forming an opening for forming the emitter of the vertical bipolar transistor, forming a sidewall on the inner peripheral surface of the opening for forming the emitter, and forming an emitter region of the vertical bipolar transistor on the second silicon oxide film. Forming a second semiconductor film that contains impurities of the same conductivity type and that is connected to the surface of the semiconductor substrate through an opening for forming an emitter of the vertical bipolar transistor on an inner peripheral surface thereof; The opening for forming the base of the vertical bipolar transistor, the lateral bipolar transistor A base region of the vertical bipolar transistor having the same conductivity type as an impurity contained in the semiconductor film, a portion contacting the first semiconductor film through the emitter electrode take-out opening and the collector electrode take-out opening; A portion of the emitter region and the collector region of the transistor which is in contact with the second semiconductor film through the emitter formation opening of the vertical bipolar transistor is provided with an emitter of the vertical bipolar transistor having the same conductivity type as an impurity contained in the semiconductor film. And forming.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A method for manufacturing a semiconductor device according to the present invention will be described below in detail with reference to the drawings. 1 to 5 are sectional views showing one embodiment of a method for manufacturing a semiconductor device according to the present invention in the order of steps. (1) An n ⁺ -type buried layer 2 is formed in a p-type semiconductor substrate 1 and n
A selective oxide film 4 is formed by forming a type epitaxial layer 3 and selectively oxidizing the layer 3.

Next, a p ⁺ -type isolation layer 5 is formed below the selective oxide film 4, an n ⁺ -type plug-in region 6 is formed in the epitaxial layer 3, and an S ⁺ -type plug-in region 6 is formed on the surface of the epitaxial layer 3.
An iO ₂ film (silicon oxide film) 7 is formed, and the MI
An MIS opening 8 is formed in a portion where an S-type capacitor is to be formed, and thereafter, a SiN film (silicon nitride film) 9 for stabilizing lateral bipolar transistor characteristics is formed on the surface by LPCVD. The purpose of forming the SiN film 9 is to prevent H, OH, and the like from entering the base surface of a lateral bipolar transistor having a structure in which the base that largely determines important characteristics of the transistor is entirely exposed. is there.

That is, when hot carriers generated by the reverse bias between the collector and the emitter jump into the interface between the base and the SiO ₂ film, an interface state is generated, the base current increases, and the characteristics such as a decrease in current amplification factor are reduced. A phenomenon occurs in which H or OH penetrates the interface.
The more the amount, the more intense. The SiO ₂ film 7 covering the substrate surface cannot effectively prevent the intrusion of H and OH, but the SiN film 9 whose film quality is denser than that of the SiO ₂ film has H or O.
H can be effectively prevented from entering. Therefore, in order to stabilize the characteristics of the lateral bipolar transistor, the SiN film 9 is used.
Is formed. FIG. 1 shows a state after forming the SiN film 9 for stabilizing the characteristics.

(2) Next, the SiN film 9 for stabilizing the characteristics of the lateral bipolar transistor is selectively etched. This etching is performed so that the SiN film 9 remains only on the base region and the MIS capacitor region of the lateral bipolar transistor. The reason why this etching is performed is that, as described above, since the SiN film 9 is effective for stabilizing the characteristics of the lateral bipolar transistor, it needs to be present on the base region of the lateral bipolar transistor. This is because it is not necessary in the part, and on the contrary, it hinders the formation of the opening for taking out the electrode as described above. Having this step is a feature of the method of manufacturing the semiconductor device.

However, since the SiN film 9 for stabilizing the characteristics of the lateral bipolar transistor is also used as a dielectric film of the MIS capacitor, the SiN film 9 is left in the MIS capacitor. 9a shows a dielectric film of the MIS type capacitor. Thereafter, a resist film 10 for forming an active window is selectively formed. FIG. 2 shows the resist film 1
0 shows the state after formation.

(3) Next, using the resist film 10 as a mask, the SiO ₂ film 7 or the SiO ₂ film 7 and the SiN film 9 are used.
The active layer 11 is formed by etching the double-layered film, and then a polycrystalline silicon film 12 is formed by CVD, boron B is ion-implanted into the polycrystalline silicon film 12, and the polycrystalline silicon film 12 is selected. Patterning is performed by selective etching. After that, an SiO ₂ film (second silicon oxide film) 13 is formed. FIG. 3 shows the S
The state after the formation of the iO ₂ film 13 is shown.

(4) Next, an opening 1 for forming an emitter of a vertical bipolar transistor is formed in the SiO ₂ film 13.
4 and a sidewall 15 is formed on the inner peripheral surface of the opening 14.
Is formed, and then the polysilicon film 1 for forming the emitter is formed.
6, the polycrystalline silicon film 16 is doped with an n-type impurity, and then the base 17 of the vertical bipolar transistor, the emitter 18, the collector 19, and the emitter 20 of the vertical bipolar transistor are formed by annealing. I do. After that, the polycrystalline silicon film 16 is patterned. FIG. 4 shows a state after the polycrystalline silicon film 16 is patterned. (5) Next, the SiO ₂ film 13 or the SiO ₂ film 1
An opening is formed in each electrode extraction region by selectively etching 3 and 7, and then an electrode 21 made of, for example, aluminum is formed. FIG. 5 shows a state after the electrodes 21 are formed.

Incidentally, the etching of the SiO ₂ films 13 and 7 can be performed without a fear of over-etching. This will be described below. That is, when the SiN film 9 for stabilizing the characteristics of the lateral bipolar transistor is entirely formed, the characteristics of the lateral bipolar transistor are stabilized by the SiN film 9 for stabilizing the characteristics.
When the window for electrode formation is opened while the film 9 is formed almost entirely, the base electrode and the emitter electrode of the vertical bipolar transistor, the collector electrode and the emitter electrode of the lateral bipolar transistor are SiO ₂ which is the uppermost layer of the insulating film. Only the film needs to be removed, but the remaining electrodes, that is, the base electrode of the lateral bipolar transistor and the collector electrode of the vertical bipolar transistor, have to be completely removed of SiO ₂ / SiN / SiO ₂ .

[0020] However, in the method of manufacturing the semiconductor device, the lateral bipolar transistor characteristics SiN film 9 after formation of stabilizing, so to remove the unnecessary portion of the SiN film 9, the SiO ₂ film 13 formed thereafter On the other hand, it is not necessary to remove the SiN film 9 for stabilizing characteristics when opening the window for taking out the collector electrode of the vertical bipolar transistor and for taking out the base electrode of the lateral bipolar transistor. The etching for opening the window can be performed without accompanying the above.

In addition, forming an SiN film for stabilizing the characteristics of a lateral bipolar transistor and selectively etching it to remove unnecessary portions simply stabilizes the characteristics of the lateral bipolar transistor and forms the insulating film. Not only contributes to smoothing out the window for taking out electrodes,
It is also useful for forming a dielectric film of the MIS capacitor, and the number of steps does not increase unnecessarily. This is because the SiN film 9 for stabilizing characteristics is used as a dielectric film in the MIS capacitor.

The MIS capacitor can be used as a capacitive element of an active pull-down circuit for increasing the speed of the ECL gate and reducing power consumption. FIG. 6 shows an example of such an active pull-down circuit (Nikkei Electronics Feb. 6, 1989). In this circuit, the signal input to the base of the input transistor Q ₁ is the case where the level up from the low level to the high level, similarly to the ordinary ECL output is pulled up. That is, the emitter follower transistor Q ₁ is turned is turned on.

Next, when the signal inputted to the base of the transistor Q ₁ is the level down from the high level to the low level, high-speed through the base capacitance element Cc active pull-down transistors Q ₅ the transistor Q ₁ is then turned off in is charged, the transistor Q ₅ is turned on. As a result, the output side through the transistor Q ₅ is discharged, the output side is pulled down.

The speed-up capacitive element Cc which is indispensable for such a circuit for speeding up can be formed with a small occupied area if it is formed by a MIS type capacitor. This MIS type capacitor is made of SiN for stabilizing characteristics.
After the formation of the film 9, the dielectric film 9a is formed in the process of removing unnecessary portions of the SiN film 9 so that the formation can be performed without any additional steps. Therefore, ECL for the purpose of speeding up
In a semiconductor device having a gate, S for stabilizing characteristics is used.
Providing a step of removing the iN film 9 after forming it does not waste any steps.

In this embodiment, the SiN film 9 serving as an insulating film for stabilizing the characteristics of the lateral bipolar transistor is used.
By selective etching [see step (2)], the portion on the base region of the lateral bipolar transistor and MI
Only the S-type capacitor was left.
However, if this selective etching removes only the vertical bipolar transistor collector electrode extraction region, the lateral bipolar transistor base electrode extraction region, and the semiconductor substrate side electrode extraction region of the MIS type capacitor, the lateral bipolar transistor characteristic stabilizing SiN film 9 is removed. Well, it is not necessary to remove other parts. On the other hand, by leaving the residual, it is useful to reduce the parasitic capacitance.

[0026]

According to a first aspect of the present invention, there is provided a semiconductor device having at least a vertical bipolar transistor and a lateral bipolar transistor on a semiconductor substrate, wherein a selectively formed silicon oxide film covering a surface of the semiconductor substrate; A silicon nitride film selectively formed on the oxide film to form a multilayer insulating film with the silicon oxide film; and a silicon oxide film and the silicon nitride film on a base region of the lateral bipolar transistor. The semiconductor device includes the multilayer insulating film, wherein the silicon nitride film is selectively formed so as not to be in contact with at least a base electrode of the lateral bipolar transistor and a collector electrode of the vertical bipolar transistor.

Therefore, according to the method of manufacturing a semiconductor device of the first aspect, the silicon nitride film, which is an insulating film for stabilizing characteristics, exists on the base region of the lateral bipolar transistor. Since the characteristics can be stabilized, and the silicon nitride film is removed so that the base electrode take-out region of the lateral bipolar transistor and the collector electrode take-out region of the vertical bipolar transistor are not in contact with each other. Can be performed without any trouble.

A method of manufacturing a semiconductor device according to claim 2, wherein in the method of manufacturing a semiconductor device having at least a vertical bipolar transistor and a lateral bipolar transistor on a semiconductor substrate, a collector region of the vertical bipolar transistor and the lateral bipolar transistor which are separated from each other. Forming a silicon oxide film on the entire surface of the semiconductor substrate having a base region formed on the surface thereof; forming a silicon nitride film on the silicon oxide film; A part of the base region of the lateral bipolar transistor remains except for the base electrode extraction region from which the base electrode is taken out, and at least a part of the collector region of the vertical bipolar transistor takes a collector electrode. Selectively etching so that the portion above the collector electrode extraction region does not remain, and etching the silicon nitride film and the silicon oxide film to form a base forming opening of the vertical bipolar transistor, the lateral bipolar transistor, and the like. Forming an opening for taking out the emitter electrode of the transistor and an opening for taking out the collector electrode; and forming the opening for forming the base of the vertical bipolar transistor and the taking out the emitter electrode of the lateral bipolar transistor on the silicon nitride film or the silicon oxide film. A base region of the vertical bipolar transistor to be formed and connected to the surface of the semiconductor substrate through an opening and an opening for taking out a collector electrode; a collector region of the lateral bipolar transistor; Forming a first semiconductor film containing an impurity of the same conductivity type as the emitter region, and selectively etching the first semiconductor film to form a base extraction electrode of the vertical bipolar transistor; Forming an emitter extraction electrode and a collector extraction electrode, forming a second silicon oxide film on the entire surface, exposing the semiconductor substrate to the second silicon oxide film and the first semiconductor film; Forming an opening for forming an emitter of the vertical bipolar transistor, forming a sidewall on an inner peripheral surface of the opening for forming the emitter, and forming an emitter region of the vertical bipolar transistor on the second silicon oxide film. Containing the same conductivity type impurities as the A step of forming a second semiconductor film connected to the surface of the semiconductor substrate through an opening for forming an emitter of the bipolar transistor, and an annealing process for forming a base forming opening of the vertical bipolar transistor on the semiconductor substrate; A base region of the vertical bipolar transistor having the same conductivity type as an impurity contained in the semiconductor film is provided at a portion in contact with the first semiconductor film through the opening for taking out an emitter electrode and the opening for taking out a collector electrode of the transistor. A portion of the emitter region and the collector region of the transistor which is in contact with the second semiconductor film through the emitter formation opening of the vertical bipolar transistor is provided with a vertical bipolar transistor having the same conductivity type as an impurity contained in the semiconductor film. Forming an emitter of the registers, and having a.

According to the method of manufacturing a semiconductor device of the present invention, the silicon nitride film, which is an insulating film for stabilizing characteristics, can be present on the base region of the lateral bipolar transistor. Characteristics can be stabilized. Then, the silicon nitride film is removed so that the silicon nitride film does not contact the base electrode of the lateral bipolar transistor and the collector electrode of the vertical bipolar transistor, so that the selective etching for taking out the electrode is performed without any trouble. can do.

According to a third aspect of the present invention, in the semiconductor device,
In a semiconductor device having at least a vertical bipolar transistor, a lateral bipolar transistor, and a MIS capacitor, a selectively formed silicon oxide film covering a surface of the semiconductor substrate, and a layer selectively formed as a layer above the silicon oxide film A silicon nitride film partially forming a multilayer film with a silicon oxide film, wherein the silicon oxide film is selectively removed on the MIS capacitor so as to form a MIS opening; Is formed so as to be in contact with the surface of the semiconductor substrate through the MIS opening to form a dielectric of the MIS type capacitor, and on the base region of the lateral bipolar transistor, the multilayer insulating film comprising the silicon oxide film and the silicon nitride film And the silicon nitride film has a lateral The base and collector electrodes of the vertical bipolar transistor of La transistor characterized by comprising selectively formed so as not least contact.

According to the semiconductor device of the third aspect, since the silicon nitride film, which is an insulating film for stabilizing characteristics, is also used as the dielectric film of the MIS capacitor, no special process is required. To obtain a semiconductor device in which a MIS capacitor is added.

According to a fourth aspect of the present invention, in the method of manufacturing a semiconductor device having at least a vertical bipolar transistor, a lateral bipolar transistor, and a MIS capacitor on a semiconductor substrate, the collector region of the vertical bipolar transistor separated from each other can be provided. Forming a silicon oxide film over the entire surface of the semiconductor substrate on which a base region of the lateral bipolar transistor and a semiconductor region forming one electrode of the MIS capacitor are formed on a surface portion; and selecting the silicon oxide film. Forming a MIS opening for bringing a dielectric formed after the MIS capacitor into contact with the surface of the semiconductor substrate by etching, and forming a silicon nitride film on the silicon oxide film and the MIS opening. In part Forming the entire surface of the MIS capacitor in contact with the semiconductor substrate through an IS opening to form a dielectric of the MIS capacitor; and forming a part of the silicon nitride film on at least a base region of the lateral bipolar transistor. Then, the base electrode is taken out from the region where the base electrode is taken out, and is left as a dielectric in a portion in contact with the semiconductor substrate surface through the MIS opening. At least a part of the collector region of the vertical bipolar transistor is left. And selectively etching the silicon nitride film and the silicon oxide film so that the portion on the collector electrode extraction region from which the collector electrode is extracted does not remain, thereby forming the base of the vertical bipolar transistor by etching the silicon nitride film and the silicon oxide film. Opening, lateral above Forming an opening for taking out an emitter electrode and an opening for taking out a collector electrode of a polar transistor; and forming an opening for forming a base of a vertical bipolar transistor and taking out an emitter electrode of the lateral bipolar transistor on the silicon nitride film or the silicon oxide film. A first electrode connected to the surface of the semiconductor substrate through the first opening and the collector electrode take-out opening and containing impurities of the same conductivity type as the base region of the vertical bipolar transistor to be formed, and the collector region and the emitter region of the lateral bipolar transistor; Forming a semiconductor film of
By selectively etching the first semiconductor film, a base extraction electrode of the vertical bipolar transistor, an emitter extraction electrode, a collector extraction electrode of the lateral bipolar transistor, and the MIS
Forming the other electrode of the type capacitor, forming a second silicon oxide film on the entire surface, exposing the semiconductor substrate to the second silicon oxide film and the first semiconductor film, Forming an opening for forming the emitter of the vertical bipolar transistor, forming a sidewall on the inner peripheral surface of the opening for forming the emitter, and forming an emitter region of the vertical bipolar transistor on the second silicon oxide film. Forming a second semiconductor film that contains impurities of the same conductivity type and that is connected to the surface of the semiconductor substrate through an opening for forming an emitter of the vertical bipolar transistor on an inner peripheral surface thereof; The opening for forming the base of the vertical bipolar transistor, the lateral bipolar transistor A base region of the vertical bipolar transistor having the same conductivity type as an impurity contained in the semiconductor film, a portion contacting the first semiconductor film through the emitter electrode take-out opening and the collector electrode take-out opening; A portion of the emitter region and the collector region of the transistor which is in contact with the second semiconductor film through the emitter formation opening of the vertical bipolar transistor is provided with an emitter of the vertical bipolar transistor having the same conductivity type as an impurity contained in the semiconductor film. And forming.

Therefore, according to the method of manufacturing a semiconductor device of the present invention, since the SiN film, which is an insulating film for stabilizing characteristics, is used as a dielectric film of the MIS capacitor by patterning, a special step is provided. Claim 1
A semiconductor device in which a MIS capacitor is added to the semiconductor device described above can be obtained.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing a first step of one embodiment of a method for manufacturing a semiconductor device of the present invention.

FIG. 2 is a sectional view showing a second step in the same manner.

FIG. 3 is a sectional view showing a third step.

FIG. 4 is a sectional view showing a fourth step in the same manner.

FIG. 5 is a sectional view showing a fifth step in the same manner.

FIG. 6 is a circuit diagram of an active pull-down circuit of the ECL circuit.

FIG. 7 is a cross-sectional view illustrating a conventional example.

[Description of Signs] 9 Lateral bipolar transistor characteristic stabilizing insulating film 9a Dielectric film

Continuation of the front page (58) Field surveyed (Int.Cl. ⁷ , DB name) H01L 27/082 H01L 27/06 H01L 29/72

Claims (4)

(57) [Claims] At least a vertical via is provided on a semiconductor substrate.
Polar and lateral bipolar transistors
Semiconductor device having a selectively formed silicon covering a surface of the semiconductor substrate.
Oxide film and selectively formed on the silicon oxide film.
A silicon nitride film forming a multilayer insulating film with the silicon oxide film;
On the base region of the lateral bipolar transistor.
Are at least the silicon oxide film and the silicon nitride film
And the silicon nitride film is formed of a lateral bipolar transistor.
Base electrode and vertical bipolar transistor
Formed so that it does not contact at least the collector electrode of the star
A semiconductor device characterized by being made . 2. A method of manufacturing a semiconductor device having at least a vertical bipolar transistor and a lateral bipolar transistor on a semiconductor substrate, wherein the vertical bipolar transistors separated from each other are provided.
Collector region and the lateral bipolar transistor described above
Forming a silicon oxide film on the entire surface of the semiconductor substrate having a base region formed on the surface thereof; forming a silicon nitride film on the silicon oxide film; A part of the base region is formed on the base region of the lateral bipolar transistor.
And residual <br/> exist except base electrode extraction upper region taken out over the source electrode, preparative collector electrode forms part of the collector region of at least the vertical bipolar transistor
Ri put in <br/> so that part of the collector electrode extraction region is not left, selectively etching, by etching the silicon nitride film and the silicon oxide film, for the base form of the vertical bipolar transistor opening, forming an emitter electrode lead-out opening and the collector electrode extraction opening of the lateral bipolar transistor, in the silicon nitride film or the silicon oxide film, the base forming opening of the vertical bipolar transistor, said lateral bipolar transistor Connected to the surface of the semiconductor substrate through the opening for taking out the emitter electrode and the opening for taking out the collector electrode , and
Above the base region of the vertical bipolar transistor
The collector region of the lateral bipolar transistor;
First half containing impurities of the same conductivity type as the emitter region
Forming a conductive film , and selectively etching the first semiconductor film.
Base of vertical bipolar transistor
Emitting electrode, the above-mentioned lateral bipolar transistor
Forming a collector extraction electrode and a collector extraction electrode
A step of forming a second silicon oxide film on the entire surface; and forming the second silicon oxide film and the first semiconductor film on the entire surface .
The vertical bipolar transistor exposing the semiconductor substrate.
Forming an opening for forming an emitter of a semiconductor transistor
And a sidewall formed on the inner peripheral surface of the emitter forming opening.
A step of forming, on said second silicon oxide film, the vertical by Po
Impurity of the same conductivity type as the emitter region of the transistor
And the inner peripheral surface has the above-mentioned vertical bipolar transistor.
Through the opening for forming the emitter of the
Forming a second semiconductor film connected to the surface, and annealing the semiconductor substrate by the annealing process.
Opening for base formation of bipolar transistor,
For taking out the emitter electrode of an Ral bipolar transistor
The first through the opening and the opening for taking out the collector electrode.
The portion that is in contact with the semiconductor film is not included in the semiconductor film.
The above vertical bipolar transistor of the same conductivity type as the pure product
Star base area, lateral bipolar transistor above
The emitter and collector regions of the
Through the opening for forming the emitter of the bipolar transistor
The portion in contact with the second semiconductor film includes the semiconductor film.
Vertical bipolar tiger of the same conductivity type as the impurities contained
Forming a transistor emitter . 3. The method according to claim 1, wherein the semiconductor substrate has at least a vertical via.
Polar and lateral bipolar transistors
And a MIS-type capacitor, selectively formed silicon covering the surface of the semiconductor substrate.
Selectively as a silicon oxide film and a layer above the silicon oxide film.
And a multilayer film composed partially of silicon oxide film
It has a silicon nitride film, the silicon oxide on the MIS-type capacitor
The film is selectively removed to form a MIS opening,
The silicon nitride film is formed on the semiconductor substrate through the MIS opening.
Contact the surface to form a dielectric of the MIS capacitor
Formed on the base region of the lateral bipolar transistor.
Consists of the silicon oxide film and the silicon nitride film
The silicon nitride film has a multi-layer insulating film, and the silicon nitride film has a lateral bipolar transistor.
Base electrode and vertical bipolar transistor
Formed so that it does not contact at least the collector electrode of the star
A semiconductor device characterized by being made . 4. A method for manufacturing a semiconductor device having at least a vertical bipolar transistor, a lateral bipolar transistor, and an MIS capacitor on a semiconductor substrate, wherein the vertical bipolar transistors separated from each other are provided.
Collector region and the lateral bipolar transistor described above
Base region and one electrode of the MIS capacitor
Forming an entirely silicon oxide film on the semiconductor substrate having a semiconductor region formed in a surface portion forming a by selective etching of the silicon oxide film, the M
Forming a MIS opening for bringing a dielectric formed after the IS-type capacitor into contact with the surface of the semiconductor substrate; forming a silicon nitride film on the silicon oxide film;
A step of forming a dielectric of the MIS capacitor entirely in contact with the semiconductor substrate through the MIS opening in a portion corresponding to the opening; and forming the silicon nitride film at least in a base region of the lateral bipolar transistor. Above it is a part
And residual <br/> exist except base electrode extraction upper region taken out over the source electrode, further the semiconductor substrate surface through the MIS opening
And remains at least in the collector region of the vertical bipolar transistor.
As a form part of the collector electrode extraction region for taking out the collector electrode part do not remain out of, and selectively etching, by etching the silicon nitride film and the silicon oxide film, the vertical base forming opening of the bipolar transistor, forming an emitter electrode lead-out opening and the collector electrode extraction opening of the lateral bipolar transistor, in the silicon nitride film or the silicon oxide film, bar
Opening of the base for forming the bipolar transistor
Port, the emitter voltage of the above-mentioned lateral bipolar transistor.
Through the opening for taking out the pole and the opening for taking out the collector electrode
Connected to the surface of the semiconductor substrate and to be formed
Above the base region of the vertical bipolar transistor
The collector region of the lateral bipolar transistor;
First half containing impurities of the same conductivity type as the emitter region
Forming a conductive film, and selectively etching the first semiconductor film.
Base of vertical bipolar transistor
Emitting electrode, the above-mentioned lateral bipolar transistor
Electrode, collector extraction electrode and MI
Forming the other electrode of the S-type capacitor, forming a second silicon oxide film on the entire surface, and forming the second silicon oxide film and the first semiconductor film on the entire surface .
The vertical bipolar transistor exposing the semiconductor substrate.
Forming an opening for forming an emitter of a semiconductor transistor
And a sidewall formed on the inner peripheral surface of the emitter forming opening.
A step of forming, on said second silicon oxide film, the vertical by Po
Impurity of the same conductivity type as the emitter region of the transistor
And the inner peripheral surface has the above-mentioned vertical bipolar transistor.
Through the opening for forming the emitter of the
Forming a second semiconductor film connected to the surface, and annealing the semiconductor substrate by the annealing process.
Opening for base formation of bipolar transistor,
For taking out the emitter electrode of an Ral bipolar transistor
The first through the opening and the opening for taking out the collector electrode.
The portion that is in contact with the semiconductor film is not included in the semiconductor film.
The above vertical bipolar transistor of the same conductivity type as the pure product
Star base area, lateral bipolar transistor above
The emitter and collector regions of the
Through the opening for forming the emitter of the bipolar transistor
The portion in contact with the second semiconductor film includes the semiconductor film.
Vertical bipolar tiger of the same conductivity type as the impurities contained
Forming a transistor emitter .