JP3258524B2 - Image display device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an image display device using a surface conduction electron-emitting device as an electron source and arranging a plurality of these devices on a two-dimensional plane.

[0002]

2. Description of the Related Art Conventionally, two types of electron-emitting devices, a hot cathode device and a cold cathode device, are known. Among them, in the cold cathode device, for example, a surface conduction electron-emitting device,
Field emission devices (hereinafter referred to as FE type) and metal / insulating layer / metal type emission devices (hereinafter referred to as MIM type) are known.

An example of the FE type is, for example, WP Dyke
& W. W. Dolan, “Field emission”, Advance in Elec
tron Physics, 8, 89 (1956) or CA Spindt,
“Physical Properties of thin-film field emission
catheodes with molybdenumcones ”, J. Appl. Phys.,
47, 5248 (1976) and the like.

[0004] Examples of the MIM type include, for example, C.I.
A. Mead, “Operation of tunnel-emission Devices,
J. Appl. Phys., 32,646 (1961) and the like are known.

As a surface conduction electron-emitting device, for example, MI Elinson Radio En-ng. Electron Phys., 10,
1290. (1965) and other examples described below.

The surface conduction electron-emitting device utilizes a phenomenon in which electron emission occurs when a current flows in a small-area thin film formed on a substrate in parallel with the film surface. Examples of the surface conduction electron-emitting device include a device using an SnO2 thin film by Elinson and others, and a device using an Au thin film [G. Dittmer: “Thin Solid Fi
lms ”,, 9,317 (1972)] and those using In2O3 / SnO2 thin films [M. Hartwell and CG Fonstad:“ IEEE Tr
ans. ED Conf. ", 519 (1975)] and those using carbon thin films [Hisashi Araki et al .: Vacuum, Vol. 26, No. 1, 22 (1
983)] has been reported.

As a typical example of the device configuration of these surface conduction electron-emitting devices, a plan view of the device by M. Hartwell et al. Is shown in FIG. In the figure, reference numeral 3001 denotes a substrate, and reference numeral 3004 denotes a conductive thin film made of a metal oxide formed by sputtering. The conductive thin film 3004 is formed in an H-shaped planar shape as shown. An electron emission portion 3005 is formed by subjecting the conductive thin film 3004 to an energization process called energization forming described later. The interval L in the figure is set at 0.5 to 1 [mm], and W is set at 0.1 [mm]. Further, for convenience of illustration, the electron-emitting portion 3005 is shown in a rectangular shape at the center of the conductive thin film 3004, but this is a schematic shape, and the position and shape of the actual electron-emitting portion are faithfully represented. Not necessarily.

In the above-described surface conduction electron-emitting device, such as the device by M. Hartwell et al., The electron-emitting portion 3005 is formed by applying an energization process called energization forming to the conductive thin film 3004 before electron emission. It was common to do. That is, the energization forming is to apply a constant DC voltage to both ends of the conductive thin film 3004 or to apply a DC voltage which is boosted at a very slow rate of, for example, about 1 V / min, and to energize the conductive thin film 3.
004 is locally destroyed, deformed, or altered to form an electron emitting portion 3005 in an electrically high-resistance state. Note that a crack is generated in a part of the conductive thin film 3004 that is locally broken, deformed, or altered. After the energization forming, the conductive thin film 30 is formed.
When an appropriate voltage is applied to the element 04, electrons are emitted near the crack.

The above-described surface conduction electron-emitting device has an advantage that a large number of electron-emitting devices can be formed over a large area because of its simple structure and easy manufacture. Therefore, for example, as disclosed in Japanese Patent Application Laid-Open No. 64-31332 by the present applicant, a method for arranging and driving a large number of elements has been studied.

As for applications of the surface conduction electron-emitting device, for example, image forming apparatuses such as image display apparatuses and image recording apparatuses, charged beam sources, and the like have been studied.

Particularly, as an application to an image display device, for example, US Pat.
As disclosed in -257551,
An image display device using a combination of a surface conduction electron-emitting device and a phosphor that emits light when irradiated with an electron beam has been studied. An image display device using a combination of a surface conduction electron-emitting device and a phosphor is expected to have better characteristics than other conventional image display devices. For example, compared to a liquid crystal display device that has become widespread in recent years, it can be said that it is excellent in that it is a self-luminous type and does not require a backlight and has a wide viewing angle.

As shown in FIG. 21, an arrangement in which pixels of three colors of red (R), green (G), and blue (B) are arranged in a triangle is called a delta arrangement. In this delta arrangement, as shown in the figure, in two vertically adjacent lines, the pixel pitch is shifted by ピ ッ チ pitch in the row direction. In order to produce a display device having such a delta arrangement, a liquid crystal display device shown in FIG.
As shown in FIG. 2, the column wiring is meandering.
No. 64046).

[0013]

As described above, in the display device of the delta arrangement, when the column-direction wiring is meandered, there is a problem that manufacturing is more difficult than when the column-direction wiring is straight.

SUMMARY OF THE INVENTION The present invention has been made in view of the above conventional example, and has as its object to provide an image display device which is arranged in a delta arrangement while keeping the line in the column direction straight.

Another object of the present invention is to provide an image display apparatus in which a predetermined column-direction wiring always transmits a drive signal for causing a phosphor of a predetermined color to emit light, thereby simplifying the configuration of a drive circuit. It is in.

[0016]

In order to achieve the above object, an image display device according to the present invention has the following arrangement.
That is, a surface conduction electron-emitting device having a pair of electrodes and an electron-emitting portion is connected over a plurality of rows to form a multi-electron beam source formed in a matrix, and light is emitted by electrons emitted from the electron beam source. An image display device comprising: a phosphor that is disposed in a plurality of rows such that the positions of the phosphors are shifted from each other by approximately に in a row direction between adjacent rows; The center of each is approximately 3: 1 between the electron emission portions of the surface conduction electron-emitting devices adjacent in the row direction.
And a driving unit for inverting the potential direction applied to the surface-conduction electron-emitting device for each row and driving in accordance with an image signal. .

[0017]

In the above arrangement, the position of the phosphors in a plurality of rows is approximately 1/2 in the row direction between adjacent rows.
The phosphors are arranged so as to be shifted from each other so that the center of each of the phosphors is located above a position where the electron emission portions of the surface conduction electron-emitting devices adjacent in the row direction are divided approximately 3: 1. In addition, the direction of the potential applied to these surface conduction electron-emitting devices is inverted for each row, and the device operates so as to be driven according to an image signal. Accordingly, each surface conduction electron-emitting device can display an image by emitting electrons toward the phosphors whose positions are shifted.

[0018]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below in detail with reference to the accompanying drawings.

<First Embodiment> FIG. 1 is a block diagram showing the configuration of an image display apparatus according to one embodiment of the present invention. In the first embodiment, a case will be described where interlaced scanning is not performed.

The synchronization separation circuit 14 separates the synchronization signal of the NTSC signal s1 from the video signal. This synchronization separation circuit 14
The synchronization signal separated by is sent to the timing control circuit 3, and the video signal is sent to the signal processing unit 1. After performing signal processing such as A / D conversion on the video signal, the signal processing unit 1 sends this to the modulation signal generation unit 2. The modulation signal generator 2 converts the video signal for one line from serial to parallel and outputs it to the gate of the MOS-FET 11 as a pulse width modulation signal s4.

The switching circuit 4 is a circuit for inverting the polarity of the video signal s5 output from the gate 11. Electron emission element 13 in display panel 12
Is a pair of electrodes 5 facing each other, as shown in FIG.
It has a structure in which the electron emission portion 53 is sandwiched between 6, 57. By inverting the polarity of the voltage applied to the pair of electrodes 56 and 57, the electron-emitting device 13 emits electrons in a direction in which electrons are emitted, for example, as shown in FIG. Can be released to the left.
The control signal s2 from the timing control circuit 3 is a signal for controlling the timing of inverting the polarity of the video signal s5. Reference numeral 10 denotes a switch for inverting the polarity of the video signal s5, which is switched in conjunction with a switch 8 described later.

The switching circuit 5 is a circuit for inverting the polarity of the scanning signal s6. The pulse generator 6
The pulse signal s7 having the same polarity is continuously generated. When the switch 8 is switched by the signal s3 from the timing control circuit 3, when the pulse signal s7 from the pulse generator 6 passes through the inverter 9, the polarity of the pulse signal s7 is inverted. . The pulse signal s7 that has passed through the switching circuit 5 is converted into a scanning signal s for which a row to be driven for display is selected by the scanning row selection circuit 7.
6 is sent to the display panel 12.

FIG. 2 shows a display panel 1 of the present embodiment.
FIG. 3 is a diagram for explaining the configuration of FIG.

The electron-emitting device 13 has two electrodes 56 and 57 facing each other, and an electron-emitting portion 53 sandwiched between the electrodes 56 and 57. Between these electrodes 56 and 57,
Electrons are emitted from the electron emitting section 53 by applying a voltage equal to or higher than a certain value. As illustrated, the electrode 57 is connected to the column direction wiring 54 and has the same potential as the potential of the video signal s5. The electrode 56 is connected to the row wiring 55, and has the same potential as the potential of the scanning signal s6 while this line is selected for display scanning. Here, if the polarities of the video signal s5 and the scanning signal s6 are reversed, the electrodes 56, 5
The polarity of the potential applied to 7 is also inverted. Therefore, the polarity of the voltage applied to the electron emission section 53 is also inverted. When the polarity of the voltage applied to the electron emitting section 53 is reversed in this way, the trajectory of the electrons emitted from the electron emitting section 53 changes as shown in FIG.

FIG. 3 is a sectional view showing the structure of one electron-emitting device when cut along section A in FIG.

On the inside of the face plate 101 (on the side of the electron-emitting device section 53), the phosphors 110, 11
1 is applied. The electrodes 56 and 57 are connected to the row direction wiring 55 and the column direction wiring 54, respectively. When a voltage (for example, Vf [v]) higher than a certain value is applied, electrons are emitted from the electron emission unit 53. When electrons are emitted,
The electrons are accelerated in the direction of the face plate 101 by the voltage Va [V] applied between the face plate 101 and the electron emission section 53, and the electrons are accelerated toward the face plate 101.
Are irradiated on the phosphors 110 or 111 of the fluorescent substance. At this time, the electrons do not proceed right above the central axis 100 but proceed along the electron trajectory 102 or 103. When the voltage Vf is applied so that the electrode 56 has a negative polarity and the electrode 57 has a positive polarity (solid line in the figure), the electron emitting portion 5
The electrons emitted from 3 travel on orbits indicated by electron orbits 103 (solid lines). Conversely, the electrode 56 has a positive polarity and the electrode 57
When the voltage Vf is applied so as to have a negative polarity (dotted line in the figure), the trajectory of the electrons emitted from the electron emitting portion 53 becomes as shown by the electron trajectory 102 (dotted line). At this time, the distance Lef between the central axis 100 and the landing position of the electron is:
It can be calculated by the following equation (1).

Lef = 2 × K × Lh × SQRT (Vf / Va) (1) where Lh [m] is the electron emission element 13 and the phosphor 110
Alternatively, it indicates the distance to 111, and K is the electron-emitting device 1
These are constants determined by the types and shapes of the three. Also, SQR
T (Vf / Va) indicates the square root of Vf / Va.

Next, the operation of the display device of this embodiment will be described with reference to FIG.
This will be described with reference to FIG.

For example, NT input from a TV receiving circuit or the like
The SC signal is divided into a synchronization signal and a video signal by a synchronization separation circuit 14. The synchronization signal is sent to the timing control circuit 3, and the video signal is sent to the signal processing unit 1. Signal processing unit 1
Then, demodulation of R, G, and B colors, A / D conversion, and the like are performed, and a digital video signal is sent to the modulation signal generator 2. The modulation signal generating unit 2 performs serial-parallel conversion of one line of data of the video signal sent from the signal processing unit 1 and sends it out to the gate of the MOS-FET 11 as a pulse width modulation signal s4.

The switching circuit 4 is a circuit for inverting the polarity of the video signal s5. The switch 10 receives a switch switching signal s2 from the timing control circuit 3, and the switch 10 receives the switch signal s2 according to the switching signal s2.
Is switched between the terminal a and the terminal b. Now, when the switch 10 is connected to the terminal a, a negative video signal s5 is sent to the display panel 12, and when the switch 10 is connected to the terminal b, the positive video signal s5 is sent. Will be output. The switching between the positive and negative polarities is performed every one horizontal synchronization period (1H).

The switching circuit 5 is a circuit for inverting the polarity of the scanning signal s6 input to the display panel 12. First, the pulse generator 6 generates a 1H-cycle pulse signal s7 having the same polarity (for example, positive polarity).
The switch 8 is switched every 1H by a switch switching signal s3 from the timing control circuit 3. That is, when the switch 8 is connected to the terminal c, the pulse signal s7 passes through the switching circuit 5 as it is and is input to the scanning row selection circuit 7. On the other hand, the switch 8 is connected to the terminal d
When the pulse signal s7 is connected, the polarity of the pulse signal s7 is inverted (negative polarity) by the inverter 9 and sent to the scanning row selection circuit 7. In this manner, the polarity is inverted every horizontal synchronization period, and the scanning signal s6 selected by the scanning row selection circuit 7 is sent to the selected row of the display panel 12.

Next, the operation of this embodiment will be described with reference to the timing chart of FIG. The symbols in the figure are the same as those in FIG.

The video signal of the NTSC signal s1 is subjected to signal processing by the signal processing section 1 and the weighted signal generation section 2 to become a pulse width modulation signal s4. The pulse width modulation signal s4 in FIG. 4 focuses on one signal line in the column direction and shows a signal flowing therethrough. This pulse width modulation signal s
The longer the width L of 4 is, the longer the time in which electrons are emitted from the electron emitting portion 53 is, and thus the brightness of the pixels that emit light is perceived as being brighter. The switch switching signal s2 for switching the switching circuit 4 is generated every 1H, and the switch 10 is switched by the switch switching signal s2.

In FIGS. 4A and 4B, a and b of the switch signal s2 indicate the connection state with the terminal of the switch 10. That is, when the switch 10 is connected to the terminal a, the video signal s5 has a negative polarity, and when the switch 10 is connected to the terminal b, the video signal s5 has a positive polarity. The state of the video signal s5 at this time is shown by the video signal s5 in FIG. Note that a thin solid line indicating the video signal s5 is a ground potential (= 0).
[V]). The pulse width of the video signal s5 is equal to the width L of the pulse width modulation signal s4.

The pulse signal s7 output from the pulse generator 6 is also generated at a 1H cycle as described above. In this embodiment, the pulse signal s7 has a positive polarity. The signal s3 for switching the switch 8 output from the timing control circuit 3 is also generated in a 1H cycle, whereby the switch 8 is switched and connected to the terminals c and d every 1H. In FIG. 4, c and d of the signal s3 indicate the connection state with the terminal and d of the switch 8.
Accordingly, the scanning signal s6 becomes 1H as shown in FIG.
Each time the signal is inverted.

FIG. 5 is a diagram showing how electrons are emitted from each electron emitting portion 53 toward the phosphor when the display device is driven as described above.
When the X, Y, and Z coordinate systems are defined with the column direction as the Y direction, XZ along the n-th row and the (n + 1) -th row emission elements
FIG. 4 shows a cross-sectional view taken along a plane.

In FIG. 5, the upper side is a cross-sectional view of the electron-emitting device in the n-th row, and the lower side is a cross-sectional view of the electron-emitting device in the (n + 1) -th row. In the display device of this embodiment, since the pixel array is a delta array as shown in FIG.
In the (+1) th row, the phosphors 150 are arranged with a shift of 1/2 pitch in the horizontal direction. As described above, the electrode 57 is connected to the column wiring 54 (the wiring i to the wiring 1), and the electrode 56 is connected to the row wiring 55. As shown in the figure, the positions of these electrodes are not shifted in the horizontal direction between the n-th row and the (n + 1) -th row.
Are each composed of one straight line. These electrodes 56,
When a voltage equal to or higher than a predetermined voltage value is applied between the electrodes 57 and 57, electrons are emitted from the electron emitting portion 53 existing in the electron emitting element 13 sandwiched between the electrodes 56 and 57, and an electron trajectory 155 as shown in the drawing is drawn. Irradiates the phosphor 150. Also,
As shown in the figure, the center position of each phosphor 150 in the X-axis direction is above the position where the space between the electron-emitting portions 53 is divided 3: 1.

Next, a method of driving the electron-emitting devices in the two rows of the n-th row and the (n + 1) -th row will be described.

First, the n-th row direction wiring 55 is selected.
The scanning signal s6 of negative polarity is input to the row direction wiring 55. In synchronization with this, a positive polarity video signal s5 is input to the column direction wiring 54. As a result, the potential of the electrode 57 becomes positive and the potential of the electrode 56 becomes negative. As a result, electrons are irradiated onto the phosphor 150 from the electron emission section 53 along an electron trajectory 155 as shown in the figure. Next, (n +
1) The row direction wiring 55 of the row is selected, a positive scanning signal s6 is input to the row direction wiring 55, and in synchronism therewith, a negative video signal s5 is input to the column direction wiring 54. You. As a result, the potential of the electrode 57 becomes negative and the potential of the electrode 56 becomes positive. Thus, the electron emission portion 5
Electrons are irradiated on the phosphor 150 along the electron orbit 155 as shown in FIG. By inverting the polarity of the voltage applied to the electron-emitting portion 53 in the two continuous lines in this manner, a display device having the phosphors 150 arranged in a delta arrangement constitutes a display circuit with straight lines in the column direction. can do.

In FIG. 5, the wirings i and (n +
1) One pixel is formed by the wirings j and k in the row.

Also, as shown in FIG. 6, by changing the output direction of the electron orbit and the length of the orbit, the combination of the electron emitting portion 53 and the phosphor 150 can have a configuration different from that of FIG. It is. Such a change in the electron orbit can be achieved by changing the values of Va and Vf in the above-mentioned equation (1). However, in the case of the configuration as shown in FIG. 5, the same color signal flows through one column wiring 54 (an R signal on the wiring i, a G signal on the wiring j, and a B signal on the wiring k). ), There is an advantage that the driving circuit can be simplified. FIG.
In the example of (1), one pixel is composed of the column direction wiring j of the nth row and the column direction wirings i and j of the (n + 1) th row.

<Second Embodiment> Next, as a second embodiment of the present invention, a method of interlaced scanning and displaying an NTSC signal will be described. Incidentally, this second embodiment can also be realized by the circuit of FIG. 1, as in the first embodiment. However, the switching cycle of the switches 8 and 10 in FIG. 1 is not one horizontal scanning period (1H) but one field period. Further, in order to perform interlaced scanning, the scanning row selection circuit 7 needs to select a scanning row every other row. Further, in the second embodiment, the same electron-emitting device as that in the first embodiment is used, and wiring is performed as shown in FIG.

Next, the operation of this embodiment will be described with reference to the timing chart of FIG. Note that the symbols in the figure are the same as those in FIG.

The video signal of the NTSC signal s1 is subjected to signal processing in the signal processing section 1 and the modulation signal generation section 2 to become a pulse width modulation signal s4. The pulse width modulation signal s4 is a signal that focuses on one column direction signal and indicates a signal flowing therethrough. The longer the width L of the pulse width modulation signal s4, the longer the time period during which electrons are emitted from the electron emission unit 53, so that the bright spot (pixel) feels brighter. The switch switching signal s2 is generated every field period to switch the connection of the switch 10. “A” and “b” in the signal s2 in FIG. 6 represent terminals to which the switch 10 is connected. When the switch 10 is connected to the terminal a, the video signal s5 has a negative polarity, and when the switch 10 is connected to the terminal b, the video signal s5 has a positive polarity. The state of the video signal s5 is shown as s5 in FIG. The thin solid line in the figure represents the ground potential (= 0 [V]). The pulse width of the video signal s5 is equal to the width L of the pulse width modulation signal s4.

The pulse signal s7 is generated in a 1H cycle. In this embodiment, the pulse signal s7 has a positive polarity. The signal s3 for switching the switch 8 is generated in a cycle of one field period. Thereby, the switch 8 is switched so as to be connected to the terminals c and d every field period. Accordingly, the scanning signal s6 is a signal whose polarity is inverted for each field as shown in FIG. In the second embodiment, in order to perform interlaced scanning, odd fields are displayed on odd rows such as the first row, third row, fifth row,.
The data is displayed on even-numbered rows, such as the fourth, fourth, sixth, and so on rows. Also at this time, the polarities of the video signal s5 and the scanning signal s6 must always be opposite.

[Structure of Display Panel 12 and Manufacturing Method] Next, the structure of the display panel 12 of the image display apparatus applied to the present embodiment and the manufacturing method thereof will be described with reference to specific examples.

FIG. 8 is a perspective view of the display (display) panel 12 used in the present embodiment, in which a part of the panel 12 is cut away to show the internal structure thereof.

In the figure, reference numeral 1005 denotes a rear plate, which corresponds to the above-mentioned rear plate 153. 1006 is a side wall,
A face plate 1007 corresponds to the face plate 101 described above. With these 1005 to 1007, the display panel 1
An airtight container for maintaining the inside of the container 2 at a vacuum is formed. When assembling such an airtight container, it is necessary to seal the joints of the members in order to maintain sufficient strength and airtightness. In, 400-degree Celsius
Sealing was achieved by baking at 500 degrees for 10 minutes or more. A method of evacuating the inside of the airtight container to a vacuum will be described later.

A substrate 1001 is fixed to the rear plate 1005. On the substrate 1001, N × M surface-conduction emission devices 1002 are formed. (N, M
Is a positive integer of 2 or more, and is appropriately set according to the target number of display pixels. For example, in a display device for displaying high-definition television, N = 3000, M
It is desirable to set a number equal to or greater than 1000. In this embodiment, N = 3072 and M = 1024).
The N × M surface conduction electron-emitting devices 1002 are arranged in a simple matrix by M row-directional wirings 1003 and N column-directional wirings 1004. The part constituted by 1001 to 1004 is called a multi-electron beam source. In addition, regarding the manufacturing method and structure of the multi-electron beam source,
I will elaborate later.

In this embodiment, the substrate 1001 of the multi-electron beam source is fixed to the rear plate 1005 of the airtight container.
If 1 has sufficient strength, the substrate 100 of the multi-electron beam source is used as a rear plate of the hermetic container.
1 itself may be used.

On the lower surface of the face plate 1007, a fluorescent film 1008 (corresponding to the fluorescent material 150 of the above embodiment) is formed. Since this embodiment is a color display device, phosphors of three primary colors of red, green, and blue used in the field of CRT are separately applied to a portion of the fluorescent film 1008. For example, as shown in FIG.
Phosphors corresponding to each color B are arranged in a delta shape, and a black conductive material 1010 is provided between the phosphors of each color. The purpose of providing the black conductive material 1010 is as follows.
In order to prevent the display color from being shifted even if there is a slight shift in the electron beam irradiation position, to prevent the reflection of external light to prevent the display contrast from lowering, and to further reduce the fluorescent film by the electron beam. This is to prevent charge-up. Although graphite is used as a main component of the black conductor 1010, any other material may be used as long as it is suitable for the above purpose.

When a monochrome display panel is formed, a monochromatic phosphor may be used for the phosphor film 1008, and the black conductive material 1010 is not necessarily required.

The rear plate 10 of the fluorescent film 1008
On the surface on the 05 side, a metal back 1009 known in the field of CRT is provided. The purpose of providing the metal back 1009 is to improve the light utilization rate by mirror-reflecting a part of the light emitted from the fluorescent film 1008, and to protect the fluorescent film 1008 from the collision of negative ions with the electron beam. This is for the purpose of functioning as an electrode for applying an acceleration voltage, and also for functioning as a conductive path for the excited electrons of the fluorescent film 1008. Such a metal back 100
9: After forming the fluorescent film 1008 on the face plate 1007, the surface of the fluorescent film is smoothed, and
(Aluminum) was formed by a vacuum deposition method.
Note that when a fluorescent material for low voltage is used for the fluorescent film 1008, the metal back 1009 is not used.

Although not used in this embodiment, a transparent electrode made of, for example, ITO is provided between the face plate 1007 and the fluorescent film 1008 for the purpose of applying an acceleration voltage and improving the conductivity of the fluorescent film. May be provided.

Further, Dx1 to Dxm, Dy1 to Dyn and Hv
Is a terminal for electric connection of an airtight structure provided for electrically connecting the display panel 12 to an electric circuit (not shown). Dx1 to Dxm are connected to the row wiring 55 of the multi electron beam source, Dy1 to Dyn are connected to the column wiring 54 of the multi electron beam source, and Hv is electrically connected to the metal back 1009 of the face plate 1007. Have been.

In order to evacuate the inside of the hermetic container to a vacuum, after assembling the hermetic container, an exhaust pipe (not shown) and a vacuum pump are connected, and the inside of the hermetic container is raised to 10 −7 [T
orr]. Thereafter, the exhaust pipe is sealed, but a getter film (not shown) is formed at a predetermined position in the airtight container immediately before or after the sealing in order to maintain the degree of vacuum in the airtight container. . The getter film is, for example, a film formed by heating and depositing a getter material containing Ba as a main component by a heater or high-frequency heating.
10 minus 5 or 1 × 10 minus 7 [To
rr].

As described above, the display panel 12 according to one embodiment of the present invention is described.
The basic configuration and its manufacturing method have been described.

Next, a method of manufacturing the multi-electron beam source used for the display panel 12 of the above embodiment will be described. The multi-electron beam source used for the image display device of the present embodiment is:
There is no limitation on the material, shape, or manufacturing method of the surface conduction electron-emitting device as long as it is an electron source in which the surface conduction electron-emitting devices are arranged in a simple matrix. However, the present inventors have found that among the surface conduction electron-emitting devices, those in which the electron-emitting portion or its peripheral portion is formed from a fine particle film have excellent electron-emitting characteristics and can be easily manufactured. Therefore, it can be said that such a multi-electron beam source is most suitable for use in a high-luminance, large-screen image display device. Therefore, in the display panel 12 of the above embodiment, the surface conduction electron-emitting device 1002 in which the electron-emitting portion 53 or its peripheral portion is formed of a fine particle film is used. Therefore, the basic configuration, manufacturing method and characteristics of a suitable surface conduction electron-emitting device will be described first, and then the structure of a multi-electron beam source in which many devices are arranged in a simple matrix will be described.

[Suitable Device Configuration of Surface Conduction Emission Device and Manufacturing Method Thereof] A typical configuration of a surface conduction type emission device in which an electron emitting portion or its peripheral portion is formed from a fine particle film includes a planar type and a vertical type. There are two types.

<Plane type surface conduction electron-emitting device> First, the structure of a planar surface conduction electron-emitting device and its manufacturing method will be described.

FIGS. 10 (a) and 10 (b) are a plan view (a) and a cross-sectional view (b) for explaining the structure of a planar type surface conduction electron-emitting device.

In the figure, 1101 is a substrate, 1102 and 110
3 is an element electrode (corresponding to the electrodes 56 and 57 described above), 110
Reference numeral 4 denotes a conductive thin film, 1105 denotes an electron emitting portion formed by an energization forming process, and 1113 denotes a thin film formed by an energization activation process. As the substrate 1101,
For example, various types of glass substrates such as quartz glass and blue plate glass, various types of ceramics substrates such as alumina, and substrates obtained by laminating an insulating layer made of, for example, SiO2 on the above various types of substrates can be used.

The device electrodes 1102 and 1103 provided on the substrate 1101 in parallel with the substrate surface are formed of a conductive material. For example, N
i, Cr, Au, Mo, W, Pt, Ti, Cu, Pd,
Materials may be appropriately selected from metals such as Ag, alloys of these metals, metal oxides such as In2 O3 -SnO2, and semiconductors such as polysilicon. To form these electrodes 1102 and 1103,
For example, film forming technology such as vacuum evaporation and photolithography,
Although it can be easily formed by using a combination of patterning techniques such as etching, it may be formed by other methods (for example, printing technique).

The shapes of the device electrodes 1102 and 1103 are appropriately designed according to the application purpose of the electron-emitting device.
Generally, the electrode interval L is usually designed by selecting an appropriate value from the range of several hundred angstroms to several hundred micrometers. It is in the range of ten micrometers. As for the thickness d of the device electrode, an appropriate numerical value is usually selected from a range of several hundred angstroms to several micrometers. Further, a fine particle film is used for the conductive thin film 1104. The fine particle film mentioned here refers to a film containing a large number of fine particles as constituent elements (including an island-shaped aggregate). When a fine particle film is examined microscopically, usually, a structure in which individual fine particles are spaced apart from each other, a structure in which fine particles are adjacent to each other, or a structure in which fine particles overlap with each other is observed.

The particle size of the fine particles used in the fine particle film is in the range of several Angstroms to several thousand Angstroms, but preferably in the range of 10 Angstroms to 200 Angstroms. Further, the thickness of the fine particle film is appropriately set in consideration of various conditions described below. That is, the device electrode 1102
Or conditions necessary for good electrical connection with 1103, conditions necessary for good energization forming described later, conditions necessary for setting the electrical resistance of the fine particle film itself to an appropriate value described later. And so on.

More specifically, the setting is made in the range of several Å to several thousand Å, and the most preferable value is in the range of 10 Å to 500 Å.

Materials that can be used to form the fine particle film include, for example, Pd, Pt, Ru, Ag, A
u, Ti, In, Cu, Cr, Fe, Zn, Sn, T
a, W, Pb, etc., PdO, SnO2, In2
O3, PbO, Sb2O3, etc., oxides such as HfB2,
Borides such as ZrB2, LaB6, CeB6, YB4, GdB4, TiC, ZrC, HfC, TaC, Si
Examples thereof include carbides such as C and WC, nitrides such as TiN, ZrN, and HfN, semiconductors such as Si and Ge, and carbon, and are appropriately selected from these.

As described above, the conductive thin film 1104 is formed of a fine particle film.
It was set to be included in the range of 10 3 to 10 7 [Ohm / sq].

The conductive thin film 1104 and the device electrode 11
Since it is desirable that the wires 02 and 1103 be electrically connected well, they have a structure in which a part of each overlaps with the other. In the example of FIG.
From below, a substrate 1101, element electrodes 1102, 1103,
Although the conductive thin films 1104 are stacked in this order, the substrate, the conductive thin film, and the device electrodes may be stacked in this order from the bottom in some cases.

The electron-emitting portion 1105 is a crack-like portion formed in a part of the conductive thin film 1104, and has a higher electrical property than the surrounding conductive thin film. The cracked portion is formed by performing a later-described energization forming process on the conductive thin film 1104. Fine particles having a particle size of several Angstroms to several hundred Angstroms may be arranged in the crack. Since it is difficult to accurately and accurately show the actual position and shape of the electron-emitting portion, they are schematically shown in FIG.

The thin film 1113 is a thin film made of carbon or a carbon compound, and covers the electron emitting portion 1105 and its vicinity. The thin film 1113 is formed by performing an energization activation process described later after the energization forming process.

The thin film 1113 is made of any one of single crystal graphite, polycrystalline graphite and amorphous carbon, or a mixture thereof, and has a thickness of 500 [Å] or less, but 300 [Å] or less. Is more preferable.

Since it is difficult to precisely show the actual position and shape of the thin film 1113, FIG. 10 schematically shows the position and the shape of the thin film 1113, and FIG. Is illustrated.

The basic structure of the preferred elements has been described above. In the examples, the following elements were used.

That is, blue glass was used for the substrate 1101, and Ni thin films were used for the device electrodes 1102 and 1103. The thickness d of these device electrodes 1102 and 1103 is 1
000 [angstrom], and the electrode interval L was 2 [micrometer]. Pd or PdO was used as the main material of the fine particle film, the thickness of the fine particle film was about 100 [angstrom], and the width W was 100 [micrometer].

Next, a description will be given of a method of manufacturing a preferred planar type surface conduction electron-emitting device.

FIGS. 11A to 11E are cross-sectional views for explaining a manufacturing process of the surface conduction electron-emitting device of this embodiment.
The notation of each member is the same as in FIG.

(1) First, as shown in FIG.
Element electrodes 1102 and 1103 are formed over a substrate 1101. In forming these device electrodes, the substrate 1101 is sufficiently washed beforehand with a detergent, pure water, and an organic solvent, and then the material for the device electrodes 1102 and 1103 is deposited.
As a method for this deposition, for example, a vacuum film forming technique such as an evaporation method or a sputtering method may be used. Thereafter, the deposited electrode material is patterned by using a photolithography / etching technique to form a pair of device electrodes (1102 and 1103) shown in FIG.

(2) Next, as shown in FIG.
A conductive thin film 1104 is formed.

In forming the conductive thin film 1104, first, an organic metal solution is applied to the substrate 1101 shown in FIG. 11A, dried, heated and baked to form a fine particle film, and then photolithography is performed. It is patterned into a predetermined shape by etching. Here, the organometallic solution is a solution of an organometallic compound containing a material of fine particles used for the conductive thin film 1104 as a main element. Specifically, in this example, Pd was used as a main element. In the embodiment, the dipping method is used as the coating method, but other methods such as a spinner method and a spray method may be used.

The conductive thin film 11 made of a fine particle film
As a method of forming the film 04, a method other than the method of applying the organometallic solution used in this embodiment, for example, a vacuum evaporation method, a sputtering method, or a chemical vapor deposition method may be used.

(3) Next, as shown in FIG. 10C, the forming electrodes 1110 and 11
The electron-emitting portion 1105 is formed by applying an appropriate voltage during the period 03 and performing the energization forming process.

The energization forming treatment is to energize the conductive thin film 1104 made of a fine particle film, to appropriately break, deform, or alter a part of the conductive thin film 1104 to obtain a structure suitable for performing electron emission. This is the process of changing.
A portion of the conductive thin film made of the fine particle film that has been changed to a structure suitable for emitting electrons (that is, the electron emitting portion 1).
In 105), an appropriate crack is formed in the thin film. Note that the electrical resistance measured between the device electrodes 1102 and 1103 is significantly increased after the formation of the electron emission portions 1105 as compared to before the formation.

FIG. 12 shows an example of an appropriate voltage waveform applied from the forming power supply 1110 in order to describe the energizing method for forming in more detail.

When forming the conductive thin film 1104 made of a fine particle film, a pulse-like voltage is preferable. In the case of this embodiment, a pulse width T is used as shown in FIG.
One triangular wave pulse was continuously applied at a pulse interval T2. At that time, the peak value Vpf of the triangular wave pulse was sequentially increased. In addition, a monitor pulse Pm for monitoring the formation state of the electron emitting portion 1105 is inserted at an appropriate interval between the triangular wave pulses, and the current flowing at that time is measured by the ammeter 1.
111 (FIG. 11 (c)).

In this embodiment, for example, in a vacuum atmosphere of about 10 −5 [torr], for example, the pulse width T1 is 1 [millisecond] and the pulse interval T2 is 10
[Milliseconds], and the peak value Vpf is set to 0.1 for each pulse.
The voltage was increased by [V]. Then, the monitor pulse Pm was inserted at a rate of once every five pulses of the triangular wave were applied.
Here, the voltage Vpm of the monitor pulse Pm is 0.1 [V] so as not to adversely affect the forming process.
Set to. Then, when the electric resistance between the element electrodes 1102 and 1103 becomes 1 × 10 6 [ohm],
That is, when the current measured by the ammeter 1111 became 1 × 10 −7 [A] or less when the monitor pulse was applied, the energization related to the forming process was terminated.

The above method is a preferable method for the surface conduction electron-emitting device of this embodiment. For example, the design of the surface conduction electron-emitting device, such as the material and film thickness of the fine particle film or the distance L between the device electrodes, is determined. If it is changed, it is desirable to appropriately change the energization conditions accordingly.

(4) Next, as shown in FIG.
The device electrodes 1102 and 1103 are supplied from the activation power source 1112.
During the energization activation process, apply an appropriate voltage during
Improve electron emission characteristics.

The energization activation process is a process of energizing the electron emitting portion 1105 formed by the energization forming process under appropriate conditions to deposit carbon or a carbon compound in the vicinity thereof. In the figure, a deposit made of carbon or a carbon compound is schematically shown as a member 1113. By performing such an energization activation process, the emission current at the same applied voltage can be typically increased by a factor of 100 or more as compared to before the activation process.

Specifically, 10 minus the fourth power to 1
By applying a voltage pulse periodically in a vacuum atmosphere within the range of 0 to the fifth power [torr], carbon or a carbon compound originating from an organic compound existing in the vacuum atmosphere is deposited. The deposit 1113 is any of single crystal graphite, polycrystalline graphite, and amorphous carbon, or a mixture thereof, and has a thickness of 500.
[Angstrom] or less, more preferably 300 [angstrom] or less.

FIG. 13A shows an example of an appropriate voltage waveform applied from the activating power supply 1112 in order to explain the energizing method at this time in more detail. In the present embodiment, the energization activation process is performed by periodically applying a rectangular wave having a constant voltage.
[V], pulse width T3 is 1 [millisecond], pulse interval T
4 was set to 10 [milliseconds]. It should be noted that the above-mentioned energization conditions are preferable conditions for the surface conduction electron-emitting device of the present embodiment, and when the design of the surface conduction electron-emitting device is changed, it is desirable to appropriately change the conditions accordingly.

Reference numeral 1114 shown in FIG. 11D denotes an anode electrode for capturing the emission current Ie emitted from the surface conduction electron-emitting device, to which a DC high voltage power supply 1115 and an ammeter 1116 are connected. When the activation process is performed after the substrate 1101 is incorporated into the display panel 12, the phosphor screen of the display panel 12 is set to the anode electrode 111.
Used as 4. While a voltage is applied from the activation power supply 1112, the emission current Ie is measured by the ammeter 1116 to monitor the progress of the energization activation process, and the activation power supply 1
The operation of 112 is controlled.

An example of the emission current Ie measured by the ammeter 1116 is shown in FIG.
When the application of the pulse voltage starts from 2, the emission current Ie increases with time, but eventually saturates and hardly increases. As described above, when the emission current Ie is substantially saturated, the application of the voltage from the activation power supply 1112 is stopped, and the energization activation process ends.

The above-described energization conditions are preferable conditions for the surface conduction electron-emitting device of the present embodiment, and when the design of the surface conduction electron-emitting device is changed, the conditions should be changed accordingly. desirable.

As described above, the planar surface conduction electron-emitting device shown in FIG. 11E was manufactured.

[Vertical Surface Conduction Emitting Element] Next, another typical structure of a surface conduction electron-emitting element in which an electron-emitting portion or its periphery is formed of a fine particle film, that is, a vertical surface-conduction type emission device. The configuration of the emission element will be described.

FIG. 14 is a schematic sectional view for explaining the basic structure of the vertical type.

In the drawing, reference numeral 1201 denotes a substrate, 1202 and 120
Reference numeral 3 denotes an element electrode; 1206, a step forming member; 1204, a conductive thin film using a fine particle film; 1205, an electron emitting portion formed by energization forming; and 1213, a thin film formed by energization activation.

The difference between the vertical type and the flat type described above is that one of the element electrodes (1202) is provided on the step forming member 1206, and the conductive thin film 1204 is provided on the side surface of the step forming member 1206. It is in the point of coating. Accordingly, the element electrode interval L in the planar type shown in FIG.
In the vertical type, the height is set as the step height Ls of the step forming member 1206. Note that the substrate 1201, the element electrode 120
2 and 1203, conductive thin film 120 using fine particle film
For 4, the materials listed in the description of the planar type can be used in the same manner. Step forming member 1
For 206, an electrically insulating material such as SiO2 is used.

Next, a method of manufacturing a vertical surface conduction electron-emitting device will be described. FIGS. 14A to 14F are cross-sectional views for explaining a manufacturing process in the present embodiment. The notation of each member is the same as that in FIG. 14 and manufactured according to the following (1) to (7). .

(1) First, as shown in FIG.
An element electrode 1203 is formed over a substrate 1201.

(2) As shown in FIG. 10B, an insulating layer 1206 for forming a step forming member is laminated. The insulating layer 1206 may be formed by stacking, for example, SiO2 by sputtering, but other film forming methods such as, for example, a vacuum evaporation method or a printing method may be used.

(3) As shown in FIG.
An element electrode 1202 is formed over the element 206.

(4) As shown in FIG.
A part of 206 is removed using, for example, an etching method,
The device electrode 1203 is exposed.

(5) As shown in FIG. 10E, a conductive thin film 1204 using a fine particle film is formed. In order to form the conductive thin film 1204, a film forming technique such as a coating method may be used as in the case of the flat type.

(6) As in the case of the flat type, the energization forming process is performed to form the electron emitting portions 1205.
(A process similar to the planar energization forming process described with reference to FIG. 11C may be performed.) (7) As in the case of the planar type, the energization activation process is performed.
Carbon or carbon compound 12 near the electron emitting portion 1205
13 is deposited. (A process similar to the planar energization activation process described with reference to FIG. 11D may be performed.) As described above, the vertical surface conduction electron-emitting device shown in FIG. Manufactured. [Characteristics of surface conduction electron-emitting device used in display device]
The element structure and manufacturing method of the planar and vertical surface conduction electron-emitting devices have been described. Next, the characteristics when the surface conduction electron-emitting device is used in a display device will be described.

FIG. 16 shows (emission current Ie) vs. (device applied voltage Vf) characteristics and (device current If) vs. (device applied voltage) characteristics of a device using the surface conduction electron-emitting device of this embodiment in a display device. FIG. 5 is a diagram illustrating a typical example of Vf) characteristics.
Note that the emission current Ie is significantly smaller than the element current If, and it is difficult to show the same current on the same scale. In addition, these characteristics are changed by changing design parameters such as the size and shape of the element. For this reason, the two graphs are shown in arbitrary units.

The electron-emitting device used in the display device of this embodiment has the following three characteristics with respect to the emission current Ie.

First, a certain voltage (this is referred to as a threshold voltage Vth
The emission current Ie sharply increases when a voltage having the above magnitude is applied to the element, but the emission current Ie is hardly detected at a voltage lower than the threshold voltage Vth. That is, the non-linear element has a clear threshold voltage Vth with respect to the emission current Ie.

Second, since the emission current Ie changes depending on the voltage Vf applied to the element, the emission current Ie varies with the voltage Vf.
The magnitude of e can be controlled.

Third, since the response speed of the current Ie emitted from the element is fast with respect to the voltage Vf applied to the element, the amount of charge of the electrons emitted from the element depends on the length of time during which the voltage Vf is applied. Can control.

Because of the above-mentioned characteristics, the surface conduction electron-emitting device could be suitably used for a display device. For example, in a display device in which a large number of elements are provided corresponding to pixels of a display screen, if the first characteristic is used, display can be performed by sequentially scanning the display screen. That is, a voltage equal to or higher than the threshold voltage Vth is appropriately applied to the element under driving according to the desired light emission luminance, and the threshold voltage V
A voltage less than th is applied. By sequentially switching the elements to be driven in this manner, display can be performed by sequentially scanning the display screen.

Further, by using the second characteristic or the third characteristic described above, the emission luminance can be controlled, so that a gradation display can be performed.

[Structure of a multi-electron beam source in which a large number of elements are arranged in a simple matrix] Next, a structure of a multi-electron beam source in which the above-described surface conduction electron-emitting elements are arranged on a substrate and arranged in a simple matrix will be described.

FIG. 17 is a plan view of the multi-electron beam source used for the display panel 12 of FIG. As described above, on the substrate 1001, surface conduction type emission elements similar to those shown in FIG. 10 are arranged, and these elements are connected to the row-direction wiring 55 and the column-direction wiring 54, and are arranged in a simple matrix. Have been. An insulating layer (not shown) is formed between the electrodes at a portion where the row wiring 55 and the column wiring 54 intersect, so that electrical insulation is maintained.

FIG. 1 is a sectional view taken along the line AA ′ of FIG.
FIG.

Incidentally, the multi-electron source having such a structure is as follows.
The row direction wiring 55 and the column direction wiring 5 are previously formed on the substrate 1001.
4. After forming the interelectrode insulating layer (not shown), the device electrode of the surface conduction electron-emitting device, and the conductive thin film, power is supplied to each device via the row wiring 55 and the column wiring 54 to supply current. It was manufactured by performing a forming process and a current activation process.

FIG. 19 shows a display panel 12 using the surface conduction electron-emitting device of this embodiment as an electron beam source.
FIG. 1 is a block diagram showing an example of a multi-function display device configured to be able to display image information provided from various image information sources such as a television broadcast.

In the figure, reference numeral 12 denotes the display panel described above, and 2101 denotes a driving circuit for the display panel 12.
2101a is a driving circuit for outputting a video signal, 2101b
Denotes a driving circuit that outputs a scanning signal. Note that the display device of the present embodiment, when receiving a signal including both video information and audio information, such as a television signal, naturally reproduces the audio simultaneously with the display of the video. Reception of audio information not directly related to the features of the embodiment,
Descriptions of circuits, speakers, and the like related to separation, reproduction, processing, storage, and the like are omitted.

Hereinafter, the function of each unit will be described along the flow of the image signal.

First, the TV signal receiving circuit 2113 is a circuit for receiving a TV image signal transmitted using a wireless transmission system such as radio waves or spatial optical communication. The format of the received TV signal is not particularly limited, and may be, for example, a prescription formula such as the NTSC format, the PAL format, or the SECAM format. A TV signal (for example, a so-called high-definition TV such as a MUSE system) composed of a larger number of scanning lines is a signal suitable for taking advantage of the display panel 12 suitable for increasing the area and the number of pixels. Source. The TV signal received by the TV signal receiving circuit 2113 is output to the decoder 2104.

The TV signal receiving circuit 2112 is a circuit for receiving a TV image signal transmitted using a wired transmission system such as a coaxial cable or an optical fiber. As with the TV signal receiving circuit 2113, the type of the TV signal to be received is not particularly limited, and the TV signal received by this circuit is also output to the decoder 2104. Also, the image input interface circuit 2111
Is a circuit for capturing an image signal supplied from an image input device such as a TV camera or an image reading scanner. The captured image signal is output to the decoder 2104.

Image memory interface circuit 2110
Is a circuit for capturing an image signal stored in a video tape recorder (hereinafter abbreviated as VTR), and the captured image signal is output to a decoder 2104. The image memory interface circuit 2109 is a circuit for taking in an image signal stored in the video disk, and the taken-in image signal is output to the decoder 2104.
The image memory interface circuit 2108 is a circuit for taking in an image signal from a device storing still image data, such as a so-called still image disk, and the taken still image data is output to the decoder 2104.

The input / output interface circuit 2105 includes:
A circuit for connecting the present display device to an external computer, a computer network, or an output device such as a printer. In addition to inputting and outputting image data, character data, and graphic information, control signals and numerical data can be input and output between the CPU 2106 included in the display device and the outside in some cases. . The image generation circuit 2107 generates display image data based on image data and character / graphic information input from the outside via the input / output interface circuit 2105 or image data and character / graphic information output from the CPU 2106. It is a circuit for performing. Within this circuit, for example, a rewritable memory for storing image data and character / graphic information, a read-only memory for storing image patterns corresponding to character codes, and a processor for performing image processing A circuit necessary for generating an image such as an image is incorporated.

The display image data generated by the circuit of this embodiment is output to the decoder 2104. In some cases, it is possible to input / output an external computer network or a printer via the input / output interface circuit 2105. It is.

The CPU 2106 mainly performs operations related to operation control of the display device and generation, selection, and editing of a display image. For example, a control signal is output to the multiplexer 2103, and image signals to be displayed on the display panel are appropriately selected or combined. At that time, a control signal is generated to the display panel controller 2102 in accordance with the image signal to be displayed, and the screen display frequency, the scanning method (for example, interlaced or non-interlaced), the number of scanning lines on one screen, and the like. The operation of the display device is appropriately controlled. Image data and character / graphic information are directly output to the image generation circuit 2107, or image data and character / graphic information are input by accessing an external computer or memory via the input / output interface circuit 2105. .

The CPU 2106 may, of course, be involved in work for other purposes. For example,
It may be directly related to a function of generating and processing information, such as a personal computer or a word processor. Alternatively, as described above, the computer may be connected to an external computer network via the input / output interface circuit 2105, and work such as numerical calculation may be performed in cooperation with an external device.

The input unit 2114 is connected to the CPU 21.
06 is for the user to input commands, programs, data, and the like. For example, in addition to a keyboard and a mouse, various input devices such as a joystick, a barcode reader, and a voice recognition device can be used.

A decoder 2104 converts various image signals input from the above 2107 to 2113 into three primary color signals,
Alternatively, it is a circuit for inversely converting a luminance signal into an I signal and a Q signal. It is to be noted that the decoder 2104 desirably includes an image memory therein, as indicated by a dotted line in FIG. This is for handling television signals that require an image memory when performing inverse conversion, such as the MUSE method. Also, by having an image memory,
There is an advantage that display of a still image is facilitated, or image processing and editing such as pixel thinning, interpolation, enlargement, reduction, and synthesis can be easily performed in cooperation with the image generation circuit 2107 and the CPU 2106. Because.

A multiplexer 2103 is connected to the CPU 2
A display image is appropriately selected based on a control signal input from the control unit 106. That is, the multiplexer 2103 selects a desired image signal from the inversely converted image signals input from the decoder 2104, and selects the driving circuit 2101
a, 2101b. In that case, by switching and selecting an image signal within one screen display time, it is possible to divide one screen into a plurality of areas and display different images depending on the areas, as in a so-called multi-screen TV. . Also, the display panel controller 2102
Is a circuit for controlling the operation of the drive circuits 2101a and 2101b based on the control signal input from the CPU 2106.

First, as a signal related to the basic operation of the display panel 12, for example, a signal for controlling an operation sequence of a power supply (not shown) for driving the display panel is output to the driving circuits 2101a and 2101b. .

Further, as a signal relating to the driving method of the display panel, a signal for controlling, for example, a screen display frequency and a scanning method (for example, interlaced or non-interlaced) is output to the driving circuits 2101a and 2101b.

In some cases, control signals related to image quality adjustment such as brightness, contrast, color tone, and sharpness of a display image may be output to the drive circuits 2101a and 2101b. The driving circuits 2101a and 2101b
A circuit for generating a drive signal to be applied to the display panel 12, which operates based on an image signal input from the multiplexer 2103 and a control signal input from the display panel controller 2102.

The function of each unit has been described above. With the configuration illustrated in FIG. 20, in the present display device, image information input from various image information sources is displayed on the display panel 1.
2 can be displayed. That is, various image signals such as television broadcasts are inversely converted by the decoder 2104, then appropriately selected by the multiplexer 2103, and input to the drive circuits 2101a and 2101b.
On the other hand, the display controller 2102 generates a control signal for controlling the operation of the driving circuits 2101a and 2101b according to the image signal to be displayed. Drive circuit 21
01a and 2101b apply drive signals to the display panel 12 based on image signals and control signals.

As a result, an image is displayed on the display panel 12. These series of operations are performed by the CPU
It is controlled overall by 2106. In addition, in the present display device, not only the image information selected from a plurality of pieces of image information is displayed but also displayed by the involvement of the image memory incorporated in the decoder 2104, the image generation circuit 2107 and the CPU 2106. For image information, for example, image processing such as enlargement, reduction, rotation, movement, edge enhancement, thinning, interpolation, color conversion, image aspect ratio conversion,
It is also possible to perform image editing such as combining, erasing, connecting, exchanging, and fitting. Although not specifically described in the description of the present embodiment, a dedicated circuit for processing and editing audio information may be provided as in the above-described image processing and image editing.

Therefore, the present display device is a television broadcast display device, a video conference terminal device, an image editing device that handles still images and moving images, a computer terminal device, an office terminal device such as a word processor, a game machine, and the like. Function can be provided by a single unit, and the range of application is extremely wide for industrial or consumer use.

FIG. 20 shows only an example of the configuration of a display device using a display panel using a surface conduction electron-emitting device as an electron beam source, and it goes without saying that the present invention is not limited to this. No. For example, among the components shown in FIG. 20, circuits relating to functions that are unnecessary for the intended use may be omitted. Conversely, additional components may be added depending on the purpose of use. For example, when the present display device is applied as a videophone, it is preferable to add a transmission / reception circuit including a television camera, an audio microphone, an illuminator, and a modem to the components.

In the present display device, in particular, since the display panel using the surface conduction electron-emitting device as the electron beam source can be easily thinned, the depth of the entire display device can be reduced. In addition, since the display panel using the surface conduction electron-emitting device as the electron beam source is easy to enlarge the screen, has high brightness, and has excellent viewing angle characteristics, the display device of this embodiment is full of immersive and powerful images. Can be displayed with good visibility.

The present invention may be applied to a system composed of a plurality of devices or an apparatus composed of one device. The present invention can also be applied to a case where the present invention is achieved by supplying a program for implementing the present invention to a system or an apparatus.

As described above, according to the present embodiment, in the display device having the delta-arranged phosphors, the positions of the electron-emitting devices are determined according to the arrangement of the phosphors, and the electron-emitting devices are connected. It is not necessary to meander the column direction wiring. Therefore, the wiring in the column direction can be made straight, and the load of creating a wiring pattern can be reduced.

Further, there is an effect that it is not necessary to double the number of column-direction wirings in order to prevent meandering of the column-direction wirings.

Further, since the wiring in the column direction can be made straight,
There is an effect that the line resistance can be further reduced, the fluctuation of the image density due to the line resistance can be suppressed, and the quality of the displayed image can be prevented from being deteriorated.

[0143]

As described above, according to the present invention, there is an effect that the phosphors arranged in the delta arrangement can emit light while the wiring in the column direction is kept straight.

Further, according to the present invention, there is an effect that the configuration of the drive circuit can be simplified by allowing the predetermined column direction wiring to always transmit the drive signal for causing the phosphor of the predetermined color to emit light.

Further, according to the present invention, since both the column direction wiring and the row direction wiring can be wired in a linear pattern, it is possible to provide an image display device which can simplify the manufacturing process.

[0146]

[Brief description of the drawings]

FIG. 1 is a block diagram illustrating a configuration of a display driving circuit of a display device according to an embodiment.

FIG. 2 is a diagram illustrating an arrangement of electron-emitting devices in the display panel of the present embodiment.

FIG. 3 is a diagram illustrating a trajectory of electrons emitted from an electron emitting portion of the electron emitting device of the present embodiment.

FIG. 4 is a timing chart when the display device is driven without performing interlaced scanning in the first embodiment of the present invention.

FIG. 5 is a diagram showing a state in which electrons are emitted from an electron emitting portion and are irradiated on a phosphor in the first embodiment.

FIG. 6 is a view showing a state in which electrons are emitted from an electron emitting portion and are irradiated on a phosphor in another embodiment of the present invention.

FIG. 7 is a timing chart for driving a display device by performing interlaced scanning in a second embodiment of the present invention.

FIG. 8 is a partially exploded perspective view showing a configuration of a display panel of the image forming apparatus according to the embodiment of the present invention.

FIG. 9 is a schematic view of a phosphor screen of a conventional image forming apparatus.

FIGS. 10A and 10B are a plan view and a cross-sectional view, respectively, of a planar type surface conduction electron-emitting device used in this example.

FIG. 11 is a cross-sectional view illustrating a manufacturing process of the planar surface-conduction emission type electron-emitting device of the present embodiment.

FIG. 12 is a diagram showing an applied voltage waveform in the energization forming process in the present embodiment.

FIG. 13 is a diagram showing an applied voltage waveform (a) and a change (b) of an emission current Ie during the energization activation process in this embodiment.

FIG. 14 is a plan view of a vertical surface conduction electron-emitting device used in this example.

FIG. 15 is a cross-sectional view illustrating a manufacturing process of the vertical surface conduction electron-emitting device of the present embodiment.

FIG. 16 is a graph showing typical characteristics of the surface conduction electron-emitting device used in this example.

FIG. 17 is a diagram illustrating an arrangement of a multi-electron source according to the present embodiment.

18 is a cross-sectional view of the substrate of the multi-electron beam source shown by AA ′ in FIG.

FIG. 19 is a block diagram illustrating a configuration of an image forming apparatus according to an embodiment of the present invention.

FIG. 20 is a diagram showing an example of a conventional surface conduction electron-emitting device.

FIG. 21 is a diagram showing an arrangement of pixels of a conventional color image display device.

FIG. 22 is a diagram illustrating a conventional matrix wiring.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Signal processing part 2 Modulation signal generation part 3 Timing control circuit 4,5 Switching circuit 6 Pulse generator 7 Scanning row selection circuit 8,10 Switch 9 Inverter 11 MOS-FET gate 12 Display panel 13,1002 Electron emission element 53 Electron Emission unit 54 Column direction wiring 55 Row direction wiring 56, 57 Electrode 101, 1007 Face plate 110, 150 Phosphor 154, 1005 Rear plate 1001 Substrate

Continuation of the front page (56) References JP-A-3-261028 (JP, A) JP-A-2-299142 (JP, A) JP-A-1-146236 (JP, A) JP-A-64-31332 (JP) , A) (58) Field surveyed (Int. Cl. ⁷ , DB name) H01J 31/12 G09G 3/22

Claims (9)

(57) [Claims] 1. A multi-electron beam source in which a surface conduction electron-emitting device having a pair of electrodes and an electron-emitting portion is connected in a plurality of rows and formed in a matrix, and is emitted from the electron beam source. An image display device comprising: a phosphor that emits light by electrons; wherein the phosphor is disposed over a plurality of rows, and a position of the phosphor is shifted by approximately 1/2 in a row direction between adjacent rows; A phosphor screen disposed such that a substantially center of each of the phosphors is located above a position where the electron emission portions of the surface conduction electron-emitting devices adjacent to each other in the row direction are divided approximately 3: 1; An image display device comprising: driving means for inverting a potential direction to be applied to the electron-emitting device for each row and driving the electron emission element in accordance with an image signal. 2. The device according to claim 1, wherein each of the phosphors is arranged so as to be substantially above an electron emission portion of the surface conduction electron-emitting device in a column direction.
An image display device according to claim 1. 3. Each of the phosphors emits any one of red, green and blue colors when irradiated with electrons emitted from the surface conduction electron-emitting device, and these three colors have a triangular shape. The image display device according to claim 1, wherein the image display device is arranged in the following manner. 4. The image display device according to claim 3, wherein each of the column direction wirings of the matrix outputs a signal for driving a phosphor of the same color. 5. The driving means drives each of the surface conduction electron-emitting devices such that each of the surface conduction electron-emitting devices emits electrons to a phosphor adjacent to a phosphor directly above the surface conduction electron-emitting device. The image display device according to claim 1. 6. The driving device according to claim 1, wherein the driving unit drives each of the surface conduction electron-emitting devices to emit electrons to a phosphor right above the surface conduction electron-emitting device. An image display device according to claim 1. 7. The scanning line selecting unit for selecting a line to be driven among the surface conduction electron-emitting devices of the multi-electron beam source, and the surface conduction selected by the scanning line selecting unit. A drive signal source for applying a drive signal corresponding to an image signal to a row of the mold emission elements; and an inverting unit for inverting a voltage value of the drive signal applied to the pair of electrodes every predetermined period. The image display device according to claim 1, wherein: 8. The image display device according to claim 7, wherein the inverting unit inverts a voltage applied to the pair of electrodes every horizontal period of an image. 9. The image display device according to claim 7, wherein said inverting means inverts a voltage applied to said pair of electrodes every one field period of an image.