JP3045121B2 - Semiconductor device and method of manufacturing semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device having a semiconductor chip mounted on a film carrier tape and a method of manufacturing the semiconductor device, and more particularly to a semiconductor device having a frame-type reinforcing plate mounted on a film carrier tape and a semiconductor device. The present invention relates to a device manufacturing method.

[0002]

2. Description of the Related Art Conventionally, semiconductor devices are generally manufactured by three-layer one-metal technology. A TBGA (Tape Ball Grid Ar) having a semiconductor device of this configuration using a single-sided film carrier tape and a frame-shaped reinforcing plate mechanically fixed on the film carrier tape at a predetermined potential.
A (ray) type semiconductor device will be described as an example.

A conventional example 1 is described in the specification of Japanese Patent Application No. 6-236985. Here, the base film of the film carrier tape has a thickness of 10
Since the thickness is around 0 μm, the mechanical strength is insufficient, and the substrate is likely to be warped or undulated, which impairs the ease of mounting which is a feature of the BGA package. For this reason, it is necessary to attach a reinforcing plate for the purpose of reinforcing mechanical strength.

A semiconductor device described in the specification of the above-mentioned conventional example 1 will be described with reference to the drawings. The base film 3 illustrated in FIG. 7A is formed of a non-conductive material such as a polyimide resin, and has a device hole 5 for mounting the semiconductor chip 7 and a through hole 15. An inner lead 17 extending from the peripheral portion of the base film 3 to the inside of the device hole 5 is formed on one surface (a surface facing upward in the figure) of the base film 3. An electrode pad 12 is provided on the through hole 15 at the terminal end on the side. A region on the base film 3 other than the upper surface of the electrode pad 12 is covered with the solder resist 4. Further, the terminal end of the inner lead 17 on the device hole 5 side is electrically connected to the chip electrode 22 on the semiconductor chip 8 by bonding.

Next, as shown in FIGS. 7B and 7C,
The semiconductor chip 8 in the device hole 5 is sealed with the sealing resin 7. The ball-shaped first bumps 6 are formed on the electrode pads 12 not covered with the solder resist 4 by a conductive material such as solder.
Are used as external connection electrode members.

Further, in this conventional example, as shown in FIG. 7D, a frame-type reinforcing plate 25 made of a conductive material such as copper and having a size capable of covering portions other than the device holes of the base film 3 is used. A solder resist 24 is coated on one surface (the surface facing upward in the figure) of the frame-type reinforcing plate 25 except for an arbitrary position corresponding to the through hole 15 of the base film 3. The second bumps 23 are formed on portions where the solder resist 24 is not covered, as in the case of the base film 3.

Next, as shown in FIG. 7 (e), the frame type reinforcing plate 25 with the second bumps 23 and the base film 3 having the through holes 15 shown in FIG.
Are inverted so that the bumps 23 and the through holes 15 face each other. In this state, the second bumps 23 are softened and poured into the through holes 15 to electrically connect the arbitrary electrode pads 12 and the frame-shaped reinforcing plate 25 to give a predetermined potential, thereby mechanically moving the base film 3. Fix it.

Further, as a modification or application example of the conventional example 1, a form of a structure having a heat radiation function will be described with reference to FIG. As shown in FIG. 8A, the heat dissipation plate 26 does not have an opening at the center, and thus the frame-type reinforcing plate 25 shown in FIG.
Is different. In this connection, the high heat conductive adhesive 9 is applied to the center of the heat sink 26, and the periphery of the center is shown in FIG.
The structure is the same as that of the frame type reinforcing plate 2 shown in FIG. The heat sink 26 is mounted on the base film 3 having the semiconductor chip 8 and the through hole 15 with the second bump 23 facing downward, as shown in FIG. 8B. Therefore, the second bump 23 is positioned so as to face the through hole 15 of the base film 3, while the central high thermal conductive adhesive 9 contacts the back surface of the semiconductor chip 8. In this state,
When the second bump 23 and the high thermal conductive adhesive 9 are softened and melted, the second bump 23 is electrically connected to the electrode pad 12 through the through hole 15. On the other hand, the heat sink 26 is mechanically fixed to the back surface of the semiconductor chip 8 via the high thermal conductive adhesive 9.

[0009]

However, when the frame-type reinforcing plate 25 is mounted on the base film 3 in the process of manufacturing the semiconductor device, the frame-type reinforcing plate 25 (or the heat radiating plate 26) provided on the frame-type reinforcing plate 25 (or the heat radiating plate 26). The positions of the solder bumps 23 and the through holes 15 provided in the base film 3 must be aligned with each other. Therefore, the frame type reinforcing plate 2
5 must be equipped with a device having a positioning function. Further, the frame-type reinforcing plate 25 (or the heat sink 2)
6), a solder resist 24 must be applied, and the second solder ball 23 must be mounted in advance. Therefore, it takes time and cost to process the frame-type reinforcing plate 25. further,
The frame type reinforcing plate 25 (or the heat radiating plate 26) and the base film 3 are connected via the second solder bumps 23. For this reason, there is a problem that the thickness of the entire package increases.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a semiconductor device and a method of manufacturing a semiconductor device in which the number of steps can be reduced and the outer shape can be reduced.

[0011]

In order to achieve the above object, a semiconductor device according to the present invention has a device hole (5) inside and at least two electrode pads (12) on one side on the periphery of the device hole. And metal wiring (17)
, A semiconductor chip (8) fixed and supported in a device hole (5), and a metal wiring () electrically connecting the semiconductor chip (8) and the electrode pad (12). 17), a ball-shaped bump (6) made of a conductive material formed on an electrode pad (12), and a frame-type reinforcing plate made of a conductive material mechanically fixed on a base film (3) (2), and a through hole (1) is formed on the base film of an arbitrary electrode pad portion.
5), and the frame-type reinforcing plate (2) is used as the base film (3).
The frame-type reinforcing plate (2) and the electrode pads (12) are electrically connected via through holes (15).

Further, the frame-type reinforcing plate (2) is mechanically fixed on the base film (3), and the frame-type reinforcing plate (2) and the electrode pads (1) are inserted through the through holes (15).
2) electrical connection with a predetermined conductive adhesive (13)
Good to follow.

Further, in the above-described semiconductor device, an arbitrary metal wiring (17) on the base film (3) is projected into a device hole or an outer peripheral portion of the base film or an arbitrary position on the base film. Projection (17
1) is formed, and the protrusion (171) and the frame type reinforcement (2) are formed.
And may be electrically connected.

The frame-type reinforcing plate (2) is mechanically fixed on the base film (3) using a predetermined insulating adhesive, and the frame-type reinforcing plate (2) is reinforced through the through holes (15). The electrical connection between the plate (2) and the electrode pad (12) is made by penetrating the insulating adhesive layer using a predetermined metal piece, and any metal wiring on the base film and the frame-type reinforcing plate are connected. May be electrically connected to the inside of the device hole or the outer peripheral portion of the base film or the through hole at an arbitrary position on the base film by using another conductive material.

Further, the semiconductor device has a heat radiating plate made of a heat conductive substrate for radiating heat, and the heat radiating plate is electrically connected to the frame-shaped reinforcing plate. It is preferable that they have the same potential.

According to the method of manufacturing a semiconductor device of the present invention, a device hole (5) is provided inside a predetermined base film (3), and at least two electrode pads (12) are provided on one surface on a peripheral portion of the device hole. ) And metal wiring (1)
7), a step of fixing and supporting the semiconductor chip (8) in the device hole (5), and a step of connecting the semiconductor chip (8) and the electrode pad (12) to the metal wiring (17).
Electrical connection, a step of forming a ball-shaped bump (6) made of a conductive material on the electrode pad (12), and a frame-shaped reinforcing plate made of the conductive material on the base film (3) (2) providing a mechanically fixed step, providing a through hole (15) on the base film of an arbitrary electrode pad portion, and mounting the frame-type reinforcing plate (2) on the base film (3). And the frame-type reinforcing plate (2) and the electrode pad (12) are electrically connected via a through hole (15).

Further, the frame-shaped reinforcing plate (2) is mechanically fixed on the base film (3), and the frame-shaped reinforcing plate (2) and the electrode pads (1) are inserted through the through holes (15).
2) electrical connection with a predetermined conductive adhesive (13)
Good to follow.

[0018]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of a semiconductor device and a method of manufacturing a semiconductor device according to the present invention will be described below in detail with reference to the accompanying drawings. 1 to 6 show one embodiment of a semiconductor device and a method of manufacturing the semiconductor device according to the present invention.

<First Embodiment> FIGS. 1 (a), (b),
With reference to (c), (d) and (e), the first aspect of the present invention
A semiconductor device according to the embodiment, a method for manufacturing the semiconductor device, and a method for manufacturing the semiconductor device will be described. The semiconductor device shown in FIG. 1 includes a frame-type reinforcing plate 2, a base film 3, a solder resist 4, a device hole 5, a bump 6, a sealing resin 7, a semiconductor chip 8, an electrode pad 12, a conductive adhesive 13, a through-hole. Hole 15, inner lead (or metal wiring) 1
7 and the like.

In the structure and manufacturing method of the semiconductor device according to the first embodiment, first, as shown in FIG. 1A, a semiconductor chip 8 and a base film 3 are prepared. The illustrated base film 3 is formed of a non-conductive material such as a polyimide resin, and has a device hole 5 and a peripheral portion surrounding the device hole 5 and partitioned by a cut hole (not shown) as in FIG. And A plurality of through holes 15 are provided in this peripheral portion. On one surface of the base film 3 (the surface facing upward in the figure), inner leads 17 extending from the peripheral portion of the base film 3 to the inside of the device hole 5 are formed. An electrode pad 12 provided on the through hole 15 is provided at a terminal portion on the peripheral side of the inner lead 17. The electrode pads 12 are also provided at predetermined solder bump mounting positions other than on the through holes 15. Electrode pad 12
Is covered with a cover resist, that is, a solder resist 4. Further, the end of the inner lead 17 on the device hole 5 side is electrically connected to the chip electrode 22 on the semiconductor chip 8 by bonding.

Next, as shown in FIG. 1B, the semiconductor chip 8 in the device hole 5 is sealed with a sealing resin 7. In this state, the portion of the electrode pad 12 is not covered with the solder resist 4 and is exposed to the outside. Further, in this embodiment, FIG.
, The package is turned upside down, and a conductive adhesive 13 such as a silver paste, a solder paste or an AI paste is applied to the base film 3 (the surface facing upward in the figure) through the through-hole 15. Is applied while embedding. Next, as shown in FIG. 1D, a frame-type reinforcing plate 2 made of a conductive metal such as copper and having a size capable of covering the peripheral portion of the base film 3 is prepared. The peripheral portion of the film 3 is covered and adhered.
Finally, as shown in FIG.
Ball-shaped bumps 6 are formed on the electrode pads 12 which are not covered with the solder by soldering or the like.
Are used as external connection electrode members.

<Modification of First Embodiment> Next, FIG.
(A), (b), (c), (d), (e), and (f)
With reference to, a description will be given of a modification (or an application) of the semiconductor device and the method of manufacturing the semiconductor device according to the first embodiment of the present invention. This modification is a case where the semiconductor device of the first embodiment further includes a heat sink.

The semiconductor device shown in FIG. 2 has a heat sink 1, a frame-shaped reinforcing plate 2, a base film 3, a solder resist 4,
Device hole 5, bump 6, sealing resin 7, semiconductor chip 8, high thermal conductive adhesive 9, insulating adhesive 10, insulating adhesive 11, electrode pad 12, conductive adhesive 13, conductive adhesive 14. , Through holes 15, base film openings 16, inner leads (or metal wiring) 17, and the like.

In a variation of the semiconductor device and the method of manufacturing the semiconductor device according to the first embodiment, first, FIG.
As shown in (a) and (b), the semiconductor chip 8, the inner lead 17, the electrode pad 12, the through hole 1
5 is prepared. The end of the inner lead 17 on the device hole 5 side is connected to the semiconductor chip 8.
It is electrically connected to the upper chip electrode 22 by bonding. The semiconductor chip 8 in the device hole 5 is sealed with the sealing resin 7. These are the cases where the heat sink of the first embodiment is not provided (FIG. 1A,
Same as (b)).

Next, as shown in FIG. 2C, the package is turned upside down, and a conductive adhesive 13 is applied to the base film 3 (the surface facing upward in the figure) while the through holes 15 are embedded. In addition, a highly heat conductive adhesive 9 is applied on the semiconductor chip 8. Further, as shown in FIG. 2D, the frame-shaped reinforcing plate 2 and the heat radiating plate 1 are mechanically fixed in advance using a conductive adhesive 14 and are electrically connected. As shown in FIG. 2E, the conductive adhesive 1
3 and the semiconductor chip 8 are adhered and fixed to the peripheral portion of the base film 3 and the semiconductor chip 8 via the high thermal conductive adhesive 9. Finally,
As shown in FIG. 2 (f), ball-shaped bumps 6 are formed by soldering or the like on the electrode pads 12 not covered with the solder resist 4, and these bumps 6 are used as external connection electrode members. .

<Second Embodiment> Next, FIG.
A second embodiment of the present invention will be described with reference to (b), (c), and (d). As shown in FIG. 3A, the base film 3 having the semiconductor chip 8 and the inner leads 17 is prepared, and the device holes 5 of the inner leads 17 are provided.
Are electrically connected to chip electrodes 22 on the semiconductor chip 8 by bonding. These are the same as in the first embodiment. In the second embodiment, a lead is projected into the base film opening 16 provided in the base film 3 or in the device hole or the outer periphery of the base film, in addition to the connection with the chip electrode 22 of the semiconductor chip 8, that is, the protrusion is made. This is different from the first embodiment in that a lead (or a protrusion) 171 is provided.

The protruding leads 171 are joined on the frame-shaped reinforcing plate 2 as shown in joints 18, 19 and 20 in FIG. At this time, the frame-shaped reinforcing plate 2 is
(Or an insulating adhesive) and is previously adhered and fixed to the base film 3 in the same manner as in the first embodiment. Thereafter, as shown in FIGS. 3C and 3D, the semiconductor chip 8 is sealed with a sealing resin 7 and the solder resist 4
The bumps 6 on the balls are formed by soldering or the like on the electrode pads 12 which are not covered by the bumps. The point that these bumps 6 are used as external connection electrode members is the same as in the first embodiment.

<Modification of Second Embodiment> Next, FIG.
(A), (b), (c), (d), (e), and (f)
A description will be given of a modification (or an application) of the semiconductor device and the method of manufacturing the semiconductor device according to the second embodiment of the present invention with reference to FIG. This modification is a case where the semiconductor device of the second embodiment further includes a heat sink.

As shown in FIGS. 4A, 4B and 4C, a base film 3 having a semiconductor chip 8 and an inner lead 17 is prepared. It is electrically connected to the chip electrode 22 on the semiconductor chip 8 by bonding. In addition to connecting to the chip electrodes 22 of the semiconductor chip 8, the leads are projected to form projecting leads 171, which are joined to the frame-shaped reinforcing plate 2. These points are when the heat sink of the second embodiment is not provided (FIGS. 3A, 3B, and 3C).
Is the same as

Thereafter, as shown in FIG. 4D, a conductive adhesive 14 is applied on the base film 3 and a high thermal conductive adhesive 9 is applied on the semiconductor chip 8. Further, as shown in FIG. 4E, the heat sink 1 is bonded and fixed to the peripheral portion of the base film 3 and the semiconductor chip 8 via these adhesives. Finally, as shown in FIG. 4F, ball-shaped bumps 6 are formed on the electrode pads 12 not covered with the solder resist 4 by soldering or the like.
Are used as external connection electrode members.

<Third Embodiment> Next, FIG.
A third embodiment of the present invention will be described with reference to (b), (c), (d), (e), and (f). FIG. 5 (a),
As shown in (b), a base film 3 having a semiconductor chip 8 and inner leads 17 is prepared. Also,
The end of the inner lead 17 on the device hole 5 side is electrically connected to the chip electrode 22 on the semiconductor chip 8 by bonding, and the semiconductor chip 8 in the device hole 5 is sealed with the sealing resin 7. These things are
This is the same as in the first embodiment. 3 (c), (d)
As shown in FIG.
(Or an insulating adhesive) is applied, and the frame-type reinforcing plate 2 is bonded and fixed via the same as in the first embodiment.

In the third embodiment, as shown in FIG. 3E, a metal piece 21 made of a conductive material is inserted from above the electrode pad 12 having a predetermined potential toward the frame-type reinforcing plate 2. Thereby, the frame-type reinforcing plate 2 and the electrode pads 12 are electrically connected. At this time, the metal piece 21 has a length sufficient to reach from the electrode pad 12 to the frame-shaped reinforcing plate 2. Finally, as shown in FIG. 5F, ball-shaped bumps 6 are formed by soldering or the like on the electrode pads 12 not covered with the solder resist 4 and the electrode pads 12 into which the metal pieces 21 are inserted. You. These bumps 6
Are used as external connection electrode members.

<Modification of Third Embodiment> Next, FIG.
(A), (b), (c), (d), (e), and (f)
A description will be given of a modification (or an application) of the semiconductor device and the method of manufacturing the semiconductor device according to the third embodiment of the present invention with reference to FIG. This modification is a case where the semiconductor device of the third embodiment further includes a heat sink.

As shown in FIGS. 6A and 6B, the semiconductor chip 8, the inner leads 17, and the electrode pads 1 are formed.
2. A base film 3 having a through hole 15 is prepared. Also, the device hole 5 of the inner lead 17
The side end is electrically connected to the chip electrode 22 on the semiconductor chip 8 by bonding. Further, the semiconductor chip 8 in the device hole 5 is sealed with the sealing resin 7. These are the same as in the case of not having the heat sink of the first embodiment (FIGS. 5A and 5B).

Next, as shown in FIGS. 6C and 6D, a conductive adhesive 14 (or an insulating adhesive) is provided on the base film 3 and a high thermal conductive adhesive 9 is provided on the semiconductor chip 8.
Are applied, and the heat sink 1 is bonded and fixed. Then, as shown in FIGS. 6E and 6F, the point where the metal piece 21 is attached and the bump 6 is mounted is the case where the heat sink 1 of the third embodiment is not provided (FIGS. 5E and 5F). Is the same as

As described above, in each of the embodiments, since the second solder balls are not mounted on the frame-type reinforcing plate and are bonded to the base film, the frame-type reinforcing plate and the base film are not precisely aligned. Can be joined. This reduces the number of steps. Further, the joining layer between the frame-type reinforcing plate and the base film can be made thin. Therefore, the thickness of the entire package can be reduced. Thereby, the external dimensions can be reduced. Further, a process for applying a solder resist to the frame-type reinforcing plate, a process for mounting solder balls, and the like can be eliminated, and an arbitrary potential can be easily applied to the frame-type reinforcing plate. Thereby, the versatility of the semiconductor device is improved.

The above embodiment is an example of a preferred embodiment of the present invention. However, it is not limited to this.
Various modifications can be made without departing from the spirit of the present invention.

[0038]

As is clear from the above description, the semiconductor device and the method of manufacturing the semiconductor device according to the present invention are provided with a device hole inside a predetermined base film, and at least one surface on a peripheral portion of the device hole. It has two electrode pads and metal wiring, and fixes and supports a semiconductor chip in a device hole. The semiconductor chip and the electrode pads are electrically connected by metal wiring, ball-shaped bumps made of a conductive material are formed on the electrode pads, and a frame-type reinforcing plate made of the conductive material is provided on the base film. With this configuration, a through hole is provided on the base film of any electrode pad portion, the frame-type reinforcing plate is mechanically fixed on the base film, and the frame-type reinforcing plate and the electrode pad are electrically connected through the through hole. Connect to

According to the above construction, the frame type reinforcing plate is bonded,
At the time of fixing, since an adhesive is applied to the entire surface of the base film and fixed, detailed alignment between the base film and the frame-type reinforcing plate is not required, and the assembling process is facilitated. In addition, an effect similar to that of the conventional structure can be obtained in that any electrode pad or lead can be opened to the base film by opening the base film, or the frame-type reinforcing plate can be set to a predetermined potential directly or via a conductive adhesive. Can be Furthermore, this allows the frame-type reinforcing plate to adhere to the base film without mounting the second bump on the frame-type reinforcing plate, and to set the frame-type reinforcing plate to an arbitrary potential.
Eliminating the step of bumping the frame-type reinforcing plate is required. In addition, in the present invention, the frame-type reinforcing plate is bonded and fixed to the entire base film, as compared with the conventional bonding portion between the base film and the frame-type reinforcing plate, which is only the portion where the second bump is formed. Therefore, the joint strength between the frame-type reinforcing plate and the base film is high, and the thickness of the entire product can be reduced.

[Brief description of the drawings]

FIG. 1 is a process diagram illustrating a first embodiment of a semiconductor device and a method of manufacturing a semiconductor device according to the present invention.

FIG. 2 is a modification of the first embodiment and is a process diagram illustrating a configuration having a heat sink.

FIG. 3 is a process chart illustrating a second embodiment.

FIG. 4 is a modified example of the second embodiment and is a process diagram showing a configuration having a heat sink.

FIG. 5 is a process chart illustrating a third embodiment.

FIG. 6 is a modification of the third embodiment and is a process diagram illustrating a configuration having a heat sink.

FIG. 7 is a process chart illustrating a conventional embodiment.

FIG. 8 is a process example showing a configuration having a heat sink, which is a modification of the conventional embodiment.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Heat sink 2 Frame-shaped reinforcing plate 3 Base film 4 Solder resist 5 Device hole 6 Bump 7 Sealing resin 8 Semiconductor chip 9 High heat conductive adhesive 10 Insulating adhesive 11 Insulating adhesive 12 Electrode pad 13 Conductive adhesive Reference Signs List 14 conductive adhesive 15 through hole 16 base film opening 17 inner lead 18 joint 19 joint 20 joint 21 metal piece 22 chip electrode 23 bump 24 solder resist 25 metal plate

Claims (8)

(57) [Claims] 1. A base film (3) having a device hole (5) inside and having at least two electrode pads (12) and metal wiring (17) on one surface on the periphery of the device hole; (5) a semiconductor chip (8) fixed and supported inside; a metal wiring (17) for electrically connecting the semiconductor chip (8) to the electrode pad (12); and the electrode pad (12). A ball-shaped bump (6) made of a conductive material formed thereon, and a frame-type reinforcing plate (2) made of a conductive material mechanically fixed on the base film (3); A through hole (15) is provided on the base film of the electrode pad portion of (1), and the frame-type reinforcing plate (2) is mechanically fixed on the base film (3). Electrode pad (12) Ruhoru (1
5) A semiconductor device characterized by being electrically connected via 2. The mechanical fixing of the frame type reinforcing plate (2) on the base film (3), and the frame type reinforcing plate (2) and the electrode via the through hole (15). 2. The semiconductor device according to claim 1, wherein the electrical connection with the pad is made by a predetermined conductive adhesive. 3. The semiconductor device further projects any metal wiring (17) on the base film (3) into a device hole, an outer peripheral portion of the base film, or a through hole at an arbitrary position on the base film. The semiconductor device according to claim 1, wherein the projected portion is formed, and the projected portion is electrically connected to the frame-shaped reinforcement. 4. A predetermined insulating adhesive is used for mechanically fixing the frame-type reinforcing plate (2) on the base film (3), and the frame is inserted through the through-hole (15). 2. The semiconductor according to claim 1, wherein the electrical connection between the mold reinforcing plate and the electrode pad is made by penetrating the insulating adhesive layer using a predetermined metal piece. 3. apparatus. 5. An arbitrary conductive material is connected to an arbitrary metal wiring on the base film and a frame-shaped reinforcing plate in a device hole or an outer peripheral portion of the base film or an through hole at an arbitrary position on the base film. The semiconductor device according to claim 1, wherein the semiconductor device is electrically connected. 6. The semiconductor device further includes a heat radiating plate made of a heat conductive substrate for radiating heat, the heat radiating plate being electrically connected to the frame-shaped reinforcing plate, and the frame-shaped reinforcing plate and the heat radiating plate. 6. The semiconductor device according to claim 1, wherein the potentials are the same. 7. A step of providing a device hole (5) inside a predetermined base film (3), and at least two electrode pads (12) and metal wiring (17) on one surface on a peripheral portion of the device hole. Providing; fixing and supporting a semiconductor chip (8) in the device hole (5); and electrically connecting the semiconductor chip (8) and the electrode pad (12) by a metal wiring (17). Forming a ball-shaped bump (6) made of a conductive material on the electrode pad (12); and forming a frame-shaped reinforcing plate (2) made of a conductive material on the base film (3). And mechanically fixing the base film. A through hole (15) is provided on a base film of an arbitrary electrode pad portion, and the frame-shaped reinforcing plate (2) is mechanically mounted on the base film (3). Fixed to The frame-type reinforcing plate (2) and the electrode pad (12) are inserted through the through-hole (1).
5) A method for manufacturing a semiconductor device, wherein the semiconductor device is electrically connected via 8. The mechanical fixing of the frame-shaped reinforcing plate (2) on the base film (3), and the frame-shaped reinforcing plate (2) and the electrode via the through hole (15). The method according to claim 7, wherein the electrical connection with the pad (12) is made by a predetermined conductive adhesive (13).