JP2966354B2 - Semiconductor device mounting method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device mounting method for mounting a semiconductor device on a circuit board face down (surface mounting).

[0002]

2. Description of the Related Art As electronic devices have become smaller and thinner in recent years, the speed of LSI chips, the degree of integration, and the number of pins have been increased. Packaging technology has advanced. Therefore, LSI
Various shapes and structures have also been proposed for chip packages (Nikkei Electronics 1993 No. 8-2 n
o. 587, “Pushing the Leading Edge in High Density Packaging of LSI Packages”, pp. 93-99 A mounting method using face down (a type of surface mounting) is one of them.

A method of mounting a semiconductor device by conventional face-down mounting will be described below. The face-down mounting is a mounting method of mounting the protruding electrodes of the semiconductor device downward on the circuit board. The state in which the semiconductor device is actually mounted on the circuit board by the conventional face-down mounting. Shown in FIGS. 9, 10, 11 and 12
It is. Conventionally, soldering has often been used for mounting a semiconductor device on a circuit board, but in recent years, with the miniaturization of the package of the semiconductor device and the increase in the number of connection terminals, the interval between the connection terminals has been narrowed, and the conventional soldering has been performed. It has become increasingly difficult to deal with mounting techniques. Therefore, recently, a method has been devised in which a bare semiconductor device is directly mounted on a circuit board to reduce the mounting area and use the device efficiently. Among them, the most effective method is that when connecting a semiconductor device to a circuit board, an adhesion metal or a diffusion-prevention metal vapor deposition film is formed on the electrode pads of the semiconductor device in advance, and further thereon. A solder layer is formed by plating,
This is a mounting method in which a semiconductor device having such an electrode structure is turned downward and heated to a high temperature to fuse solder to terminal electrodes of a circuit board. According to this mounting method, the mechanical strength after connection is strong, and connection can be performed collectively. (For example, Industrial Research Council, published on January 15, 1980, Japan Microelectronics Association, "IC mounting technology") A semiconductor device having a solder bump electrode is mounted on a terminal electrode of a circuit board with reference to the drawings below. A specific example of the above-described conventional mounting method will be described. As a conventional example, FIGS. 9, 10, 11 and 12 are schematic cross-sectional views showing a mounting method when a semiconductor device having a solder bump electrode is mounted on a circuit board by face-down mounting. 9, 10, 11 and 12, 1 is a terminal electrode, 2 is a circuit board, 4 is a semiconductor device, 6 is a sealing resin, 7 is a pad electrode, 8 is a filler in the sealing resin, and 13 is a projection electrode ( Solder).

A method of mounting a conventional semiconductor device having solder bump electrodes configured as described above will be described with reference to FIGS.
The outline will be described below with reference to 0, 11, and 12.
A solder bump 13 is formed on the pad electrode 7 of the semiconductor device 4 as shown in FIG. 9, and the solder bump 13 is positioned at a predetermined position on the terminal electrode 1 formed on the circuit board 2 as shown in FIG. The semiconductor device 4 is placed face down so as to overlap. Thereafter, as shown in FIG.
After the solder protruding electrode 13 is melted by heating to a high temperature to be fused to the terminal electrode 1, the space between the semiconductor device 4 and the circuit board 2 is sealed with a sealing resin 6 as shown in FIG. ,
By curing, a package of the semiconductor device is obtained.

[0005]

However, the above-described method for mounting a semiconductor device has the following problems. 1. When a circuit board having a large coefficient of thermal expansion is used when the solder is melted by heating to a high temperature and connected to a terminal electrode of the circuit board, stress is generated at a joint portion, and quality is deteriorated. 2. When a defect occurs in a semiconductor device, considerable high-temperature heating is required to remove the semiconductor device from the circuit board, and the semiconductor device cannot be easily removed.

As a semiconductor mounting method for solving the above-mentioned conventional problems, a projecting electrode is formed into a two-step projecting shape or a substantially projecting shape, and a conductive and thermoplastic resin adhesive is attached to the projecting electrode. Then, there is a method of connecting the protruding electrode of the semiconductor device and the terminal electrode of the circuit board by curing the conductive resin adhesive. However, according to this method, although the above-mentioned problem caused by using solder for connection is solved, since the conductive resin adhesive is used for connection, the connection between the projecting electrode of the semiconductor device and the terminal electrode of the circuit board is performed. The mechanical strength of the portion is weak, which causes a problem such as distortion of the connection portion during a connection state inspection or the like.

The present invention has been made to solve the above problems, and
A method of mounting a semiconductor device that enhances mechanical strength after connection between a semiconductor device and a circuit board, facilitates connection between the semiconductor device and the circuit board, and removal of the semiconductor device from the circuit board, and improves quality thereof. It is intended to provide.

[0008]

In order to solve the above-mentioned problems, a method of mounting a semiconductor device according to the present invention comprises the steps of: adhering a conductive resin adhesive to a protruding electrode of a semiconductor device; A first insulating resin attaching step of attaching a first insulating resin to a part other than the protruding electrodes of the semiconductor device and / or a part other than the terminal electrodes of the circuit board, and to the semiconductor device and / or the circuit board. The semiconductor device and the circuit board are overlapped with each other via the attached first insulating resin and the conductive resin adhesive such that the protruding electrode portion of the semiconductor device and the terminal electrode of the circuit board overlap. A joining step of joining, a first insulating resin curing step of curing the first insulating resin, and an adhesive curing step of curing the conductive resin adhesive, which are performed in combination. In things That.

Further, it is assumed that the semiconductor device and / or the remaining portion of the gap between the circuit boards have a sealing and curing step of filling a second insulating resin as a sealing resin and curing the second insulating resin. Is also good.

The conductive resin adhesive may contain a solvent type thermoplastic resin.

Further, the first insulating resin may have a plurality of spongy holes.

Further, the first insulating resin may be a solvent type thermoplastic resin.

Further, the first insulating resin may be cured and shrunk when a solvent in the first insulating resin is removed.

Further, at the time of curing the first insulating resin, at least one of the circuit board and the semiconductor device may be heated.

[0015] The projection electrode and the terminal electrode are provided on the outer periphery of the semiconductor device and the circuit board, respectively, and the first insulating resin is formed of a plurality of the projection electrodes and / or the semiconductor device. The circuit board may be attached inside the plurality of terminal electrodes.

Also, when sealing between the semiconductor device and the circuit board, it is assumed that the second insulating resin penetrates and fills the plurality of spongy holes of the first insulating resin. Is also good.

Further, the first insulating resin is a solvent-type thermoplastic resin, the conductive resin adhesive is a solvent-type thermoplastic resin, and the solvent contained in the first insulating resin is The boiling point may be lower than the boiling point of the solvent contained in the conductive resin adhesive.

The softening point of the first insulating resin is higher than the softening point of the thermoplastic resin contained in the conductive resin adhesive, and lower than the softening point of the second insulating resin. Is also good.

Further, the second insulating resin may include a filler, and the particle diameter of the filler may be larger than the spongy pore diameter.

[0020] The first insulating resin is a filler such that the thermal expansion coefficient of the first insulating resin after curing is substantially equal to the thermal expansion coefficient of the sealing resin after curing. May be further included.

The second insulating resin has the first insulating resin.
May be filled with a catalyst for curing the insulating resin.

Further, the catalyst may be a solid or a liquid.

The solid catalyst may have a particle size smaller than the spongy pore size.

The second insulating resin has the first insulating resin.
It may be filled with a curing agent for curing the insulating resin.

Further, the protruding electrode of the semiconductor device has 2
It may have a stepped shape or a substantially convex shape.

Further, the shape obtained by curing the first insulating resin in the first insulating resin curing step may be a continuous type or a drum type.

[0027]

Embodiments of the present invention will be described below with reference to the drawings. (Embodiment 1) Hereinafter, a configuration for implementing a semiconductor device mounting method according to a first embodiment of the present invention will be described. FIGS. 1, 2, 3, 4, and 5 are schematic cross-sectional views related to a configuration for implementing the semiconductor device mounting method according to the present embodiment. As shown in FIGS. 1, 2, 3, 4 and 5, 1 is a terminal electrode, 2 is a circuit board, 3 is a bonding layer, 4 is a semiconductor device, 5 is a protruding electrode, 6 is a sealing resin, and 7 is a pad electrode. Reference numeral 8 denotes a filler in the sealing resin, 9 denotes a reinforcing layer, 10 denotes a filler in the reinforcing layer, 11 denotes a spongy hole, 12 denotes a resin component of the sealing resin, and 14 denotes a conductive adhesive transfer film. .

A method of mounting the semiconductor device configured as described above will be described. As shown in FIG. 1, the protruding electrode 5 is formed on each of the plurality of pad electrodes 7 of the semiconductor device 4. By using the two-step projection electrode as shown in FIG. 1, when the conductive adhesive is used as the bonding layer as shown in FIG. 2, the spreading of the bonding layer in the lateral direction can be suppressed. Thus, the mounting density can be greatly improved.

Next, as shown in FIG. 2, with the formation side of the protruding electrode 5 of the semiconductor device 4 facing downward, the semiconductor device 4 is lowered to a transfer film of a conductive adhesive as the bonding layer 3, and the protruding electrode 5 is made conductive. After being immersed in the conductive adhesive, the semiconductor device 4 is lifted upward, and the conductive adhesive as the bonding layer 3 is collectively transferred to the vicinity of the tip of each protruding electrode 5.

Next, as shown in FIG. 3, a reinforcing layer 9 is formed near the center of the semiconductor device 4 using a first insulating resin having thermoplasticity.

Next, as shown in FIG. 4, the projecting electrode 5 of the semiconductor device 4 is electrically connected to the terminal electrode 1 of the circuit board 2 by the bonding layer 3, that is, the projecting electrode 5 of the semiconductor device 4 is formed. Is placed face-down so as to overlap a predetermined position of the terminal electrode 1 of the circuit board 2, and then heated at the curing temperature of the reinforcing layer 9 to cure the reinforcing layer 9, and the semiconductor device 4 and the circuit board 2 are separated from each other. Reinforce mechanically. When the solvent is removed by heating, the reinforcing layer 9 cures and contracts, thereby further mechanically reinforcing the semiconductor device 4 and the circuit board 2. Further, when hardened, spongy holes 1 are formed in the reinforcing layer 9.
1 is formed. In this state, the connection state of the semiconductor device 4 is inspected, and if the electric connection state is poor,
The semiconductor device 4 can be replaced. Semiconductor device 4
When the strength of the reinforcing layer 9 is low, the replacement can be performed at room temperature. When the strength is high, the reinforcing layer 9 can be heated at several tens to hundreds of tens of degrees, then softened and removed.

After the reinforcing layer 9 is cured, the bonding layer 3 is further heated at the curing temperature to improve the electrical connection between the protruding electrodes 5 of the semiconductor device 4 and the terminal electrodes 1 of the circuit board 2. After that, the connection state of the semiconductor device 4 may be inspected.

Next, as shown in FIG. 5, the remaining portion between the semiconductor device 4 and the circuit board 2 is filled with a sealing resin 6 made of a second insulating resin. At this time, the resin component 12 of the sealing resin 6
Is filled in the spongy hole 11. Next, the sealing resin 6 and the resin component 12 of the sealing resin 6 penetrating into the spongy holes 11 are heated and cured. At this time, the final connection state of the semiconductor device 4 may be inspected.

As described above, the semiconductor device 4 and the circuit board 2
Are mechanically joined to each other by the bonding layer 3, the reinforcing layer 9, and the sealing resin 6, thereby obtaining a semiconductor device package.

As is apparent from the above, according to the present embodiment, by providing the reinforcing layer 9 using the first insulating resin, the electrical connection between the protruding electrodes of the semiconductor device and the terminal electrodes of the circuit board is achieved. Connection can be mechanically reinforced,
The semiconductor device can be easily replaced at the time of the inspection before the sealing, and the adverse effect that the vicinity of the connection portion is distorted by the inspection is also eliminated. Also, by filling the spongy holes of the first insulating resin with the insulating sealing resin, the final structure can obtain the same characteristics as those obtained by sealing with the conventional sealing resin alone. it can.

In FIG. 1, the shape of the projecting electrode 5 is 2
It is desirable to have a stepped or convex shape. The material of the protruding electrode 5 is preferably gold, but may be formed of another metal. For example, solder or copper may be used. The protruding electrode 5 can be formed by a wire bonding method using a gold wire or a plating method.

In FIG. 2, the material of the conductive adhesive as the bonding layer 3 is not limited as long as it has thermoplasticity, such as epoxy, polyallyl ether, polyamide, polyester, and polyimide. Absent. Further, as the material of the conductive powder contained in the conductive adhesive, any material may be used as long as it is generally used. An alloy powder such as palladium, a composite powder such as silver-plated copper powder, and a non-metallic powder having conductivity such as carbon can be used. These conductive powders can be used alone or in combination of two or more. The particle size and shape of these conductive powders are not particularly limited.

In FIG. 3, the reinforcing layer 9 may be a syringe nozzle or the like that can supply potting. The material of the reinforcing layer 9 may be any material having thermoplasticity, such as epoxy, polyallyl ether, polyamide, polyester, and polyimide. The filler contained in the reinforcing layer 9 is desirably an insulating and low thermal expansion material such as fused silica (fused silica). The particle size is not particularly limited as long as the powder is 50 μm or less. The filling amount is determined in consideration of the thermal expansion coefficient of the sealing resin.

In FIG. 4, the curing temperature of the reinforcing layer 9 is desirably lower than the curing temperature of the bonding layer 3.

In FIG. 5, since the sealing resin 6 is quickly injected into the gap between the semiconductor device 4 and the circuit board 2 even at a low temperature of about room temperature, it is desirable that the sealing resin 6 has a low viscosity and a low thixotropy index. . The material of the sealing resin 6 may be any material as long as it is generally used. For example, a material obtained by mixing a filler with a cresol novolak type epoxy resin and a novolak type phenol resin, or a polyepoxide (usually an epoxy resin or an epoxy compound ), An acid anhydride resin (cyclic aliphatic system such as methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, etc.) and a filler. The filler in the sealing resin 6 may be a powder having a particle size of 50 μm or less, but may be an oxide compound such as silica or alumina, a nitride compound such as aluminum nitride, a carbide compound such as silicon carbide, or a silicide compound. etc,
It is desirable that the material be thermally stable and have a low coefficient of thermal expansion. (Embodiment 2) Hereinafter, a configuration for implementing a semiconductor device mounting method according to a second embodiment of the present invention will be described. 1, 2, 4, 5, and 6 are schematic cross-sectional views related to a configuration for implementing the semiconductor device mounting method according to the present embodiment. As shown in FIGS. 1, 2, 4, 5, and 6, 1 is a terminal electrode, 2 is a circuit board, 3 is a bonding layer, 4 is a semiconductor device, 5 is a protruding electrode, 6 is a sealing resin, and 7 is a pad electrode. , 8 is a filler in the sealing resin, 9 is a reinforcing layer, 10 is a filler in the reinforcing layer, 11 is a spongy hole, and 12 is a resin component of the sealing resin.

A description will be given of a part of the method for mounting the semiconductor device configured as described above, which is different from the first embodiment. As another method of forming the reinforcing layer 9, as shown in FIG. 6, a first insulating resin is attached near the center of the circuit board 2 corresponding to the center of the semiconductor device 4 to form the reinforcing layer 9. The reinforcing layer 9 may be any one that can supply potting, such as a syringe nozzle. Otherwise, the semiconductor device 4 is mounted on the circuit board 2 under the same conditions as in the first embodiment.

As described above, according to the present embodiment, the first insulating resin is attached not to the center of the semiconductor device 4 but to the portion on the circuit board 2 corresponding to the center of the semiconductor device 4, thereby forming the reinforcing layer. 9, the same effect as in the first embodiment can be obtained. (Embodiment 3) Hereinafter, a configuration for implementing a semiconductor device mounting method according to a third embodiment of the present invention will be described. 7 and 8 are schematic cross-sectional views related to a configuration for implementing the semiconductor device mounting method according to the present embodiment. As shown in FIGS. 1 and 2, 1 is a terminal electrode, 2 is a circuit board, 3 is a bonding layer, 4 is a semiconductor device, 5 is a protruding electrode, 6 is a sealing resin, 8 is a filler in the sealing resin, 9 Is a reinforcing layer, 10 is a filler in the reinforcing layer, 11 is a spongy hole,
Reference numeral 12 denotes a resin component of the sealing resin.

A method of mounting the semiconductor device configured as described above will be described. Embodiment 1 or Embodiment 2
4 and 5 of FIG.
So that the projecting electrode 5 of the semiconductor device 4 is electrically connected to the terminal electrode 1 of the circuit board 2.
After positioning the terminal electrode 1 on the circuit board 2 at a predetermined position and mounting the terminal face down, the semiconductor device 4 and the circuit board 2 are mechanically heated by heating at the curing temperature of the reinforcing layer 9. Reinforce. At this time, the reinforcing layer 9 is hardened after the shape becomes a drum shape instead of a continuous shape. Otherwise, the semiconductor device 4 is mounted on the circuit board 2 under the same conditions as in the first embodiment.

As described above, according to the present embodiment, the same effect as in the first embodiment can be obtained by hardening the reinforcing layer 9 after the shape thereof becomes a drum shape.

The bonding layer 3 is a portion formed by using the conductive resin adhesive of the present invention.

The conductive adhesive is an example of the embodiment of the conductive resin adhesive of the present invention.

The reinforcing layer 9 is a portion formed by using the first insulating resin of the present invention.

The boiling point of the solvent in the first insulating resin of the reinforcing layer 9 may be lower than the boiling point of the solvent in the conductive bonding layer 3.

The softening point of the first insulating resin of the reinforcing layer 9 may be higher than the softening point of the conductive bonding layer 3 and lower than the softening point of the sealing resin 6.

The diameter of the spongy holes 11 of the reinforcing layer 9 may be smaller than the particle diameter of the filler 8 in the sealing resin.

In order to cure the first insulating resin of the reinforcing layer 9 at the same time as the sealing resin 6, a catalyst for curing the reinforcing layer 9 may be mixed into the sealing resin 6. The curing catalyst may be solid or liquid. Further, the catalyst may be solid and the particle size of the catalyst may be smaller than the spongy pore size.

Further, in order to cure the first insulating resin of the reinforcing layer 9 simultaneously with the sealing resin 6, a curing agent for curing the reinforcing layer 9 may be mixed into the sealing resin 6.

Further, the first insulating resin contains a filler so that after the first insulating resin and the second insulating resin are cured, their respective thermal expansion coefficients become substantially equal. It may be.

Further, the first insulating resin may be cured by heating the semiconductor device and / or the circuit board.

The filler 8 in the sealing resin and the filler 10 in the reinforcing layer are one example of the embodiment of the filler of the present invention.

Also, the second insulating resin contains a filler,
The particle size of the filler may be larger than the pore size of the spongy pores.

The formation of the reinforcing layer 9 using the first insulating resin is not limited to the vicinity of the center of the circuit board 2 or the center of the semiconductor device 4.

Further, the protruding electrodes and the terminal electrodes are provided on outer peripheral portions of the semiconductor device and the circuit board, respectively, and the first insulating resin is provided on the semiconductor device and the plurality of protruding electrodes of the semiconductor device. Alternatively, it may be attached to the inside of the plurality of terminal electrodes of the circuit board.

The shape obtained by curing the first insulating resin in the first insulating resin curing step may be a continuous type or a drum type.

[0060]

As is clear from the above, according to the present invention, the electrical connection between the projecting electrode of the semiconductor device and the terminal electrode of the circuit board by the conductive resin adhesive can be mechanically reinforced. Further, at the time of inspection before sealing, the semiconductor device can be easily replaced, and furthermore, there is no adverse effect that the vicinity of the connection portion is distorted by the inspection. Also, by filling the spongy holes of the first insulating resin with the insulating sealing resin, the final structure can obtain the same characteristics as those obtained by sealing with the conventional sealing resin alone. it can. As a result,
Cost reduction and quality improvement are obtained.

[Brief description of the drawings]

FIG. 1 is a schematic cross-sectional view showing a semiconductor device according to first and second embodiments of the present invention, in which a projection electrode has a two-step projection shape.

FIG. 2 is a diagram illustrating a state in which a conductive adhesive is transferred to a bump electrode of a semiconductor device according to the first and second embodiments of the present invention.
FIG. 2 is a schematic cross-sectional view of a semiconductor device and a conductive adhesive transfer film.

FIG. 3 is a schematic sectional view showing a semiconductor device according to the first embodiment of the present invention, on which a reinforcing layer is transferred.

FIG. 4 is a schematic cross-sectional view showing a state where a semiconductor device and a circuit board are joined according to the first and second embodiments of the present invention.

FIG. 5 is a schematic diagram showing a state in which a semiconductor device and a circuit board according to the first and second embodiments of the present invention are joined, and the remaining portion between the semiconductor device and the circuit board is sealed with a sealing resin. Sectional view.

FIG. 6 is a schematic cross-sectional view showing a circuit board to which a reinforcing layer is transferred according to a second embodiment of the present invention.

FIG. 7 is a schematic cross-sectional view showing a semiconductor device and a circuit board according to a third embodiment of the present invention, in which a reinforcing layer has become a drum shape and has been hardened.

FIG. 8 is a schematic cross-sectional view illustrating a semiconductor device according to a third embodiment of the present invention, in which a reinforcing layer has become a drum shape and has been hardened, and a state in which a remaining portion between circuit boards is sealed with a sealing resin. FIG.

FIG. 9 is a schematic cross-sectional view of a conventional semiconductor device in which bump electrodes are solder.

FIG. 10 is a schematic cross-sectional view showing a state in which a semiconductor device in which projecting electrodes are solder is mounted on a conventional circuit board having terminal electrodes.

FIG. 11 is a schematic cross-sectional view showing a state in which a semiconductor device having bumps made of solder is mounted on a circuit board having terminal electrodes according to a conventional example, and then the solder is melted and fused.

FIG. 12 is a schematic cross-sectional view showing a state in which a semiconductor device having a projection electrode made of solder is mounted on a circuit board having terminal electrodes according to a conventional example and sealed with a sealing resin.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Terminal electrode 2 Circuit board 3 Bonding layer 4 Semiconductor device 5 Projection electrode 6 Sealing resin 7 Pad electrode 8 Filler in sealing resin 9 Reinforcement layer 10 Filler in reinforcing layer 11 Spongy hole 12 Resin component of sealing resin 13 Projection electrode (solder) 14 Conductive adhesive transfer film

──────────────────────────────────────────────────続 き Continued on front page (58) Field surveyed (Int.Cl. ⁶ , DB name) H01L 21/60 311

Claims (14)

(57) [Claims] An adhesive bonding step of bonding a conductive resin adhesive to a protruding electrode of the semiconductor device; and a solvent type process for a part of the semiconductor device other than the protruding electrode and / or a part of the circuit board other than the terminal electrode. A first insulating resin attaching step of attaching a first insulating resin made of a thermoplastic resin, and bonding the first insulating resin and the conductive resin attached to the semiconductor device and / or the circuit board. A bonding step of bonding the semiconductor device and the circuit board so that the protruding electrode portion of the semiconductor device and the terminal electrode of the circuit board overlap with each other via an agent, and curing the first insulating resin. To remove the solvent
A first insulating resin curing step in which a plurality of spongy holes are formed therein, an adhesive curing step of curing the conductive resin adhesive, and a gap between the semiconductor device and the circuit board.
Is filled with a second insulating resin as a sealing resin.
The resin component of the second insulating resin is the first insulating resin.
The second insulating resin is hardened by mixing into the internal holes.
A method for mounting a semiconductor device, comprising a sealing and hardening step of performing a combination thereof. 2. The method according to claim 1, wherein the conductive resin adhesive is a solvent-type thermoplastic resin. 3. A second insulating resin includes a filler, a semiconductor device according to claim 1 or 2, the particle size of the filler may be greater than the diameter of the spongy holes How to implement. 4. A second insulating resin, to claim 1 or 2, characterized in that it contains a curing catalyst of the first insulating resin so as to simultaneously cure the first insulating resin <br/> A mounting method of the semiconductor device described in the above. 5. The method according to claim 4 , wherein the curing catalyst is a solid or a liquid. 6. The catalyst according to claim 5, wherein the catalyst is solid and the particle size of the catalyst is smaller than the spongy pore size.
A mounting method of the semiconductor device described in the above. 7. The second insulating resin, according to claim, characterized in that it contains the first curing curing agent for the insulating resin so as to simultaneously cure the first insulating resin 1 Also
3. The method for mounting a semiconductor device according to item 2 . 8. The first insulating resin contains a filler such that the first insulating resin and the second insulating resin have substantially the same coefficient of thermal expansion after being cured. The method of mounting a semiconductor device according to claim 1 , wherein: 9. boiling point of the solvent contained in the first insulating resin, mounting method of a semiconductor device according to claim 2, wherein a lower than the boiling point of the solvent contained in the conductive resin adhesive. 10. A softening point of the first insulating resin is higher than the softening point of the conductive resin bonding agent, according to claim 2, wherein a lower than the softening point of the second insulating resin A method for mounting a semiconductor device. 11. The first insulating resin-curing step, the mounting method of a semiconductor device and / or the claims 1, characterized in that carried out by heating the circuit board 10 according to any one of the semiconductor device. 12. The projection electrode and the terminal electrode are provided on outer peripheral portions of the semiconductor device and the circuit board, respectively, and the first insulating resin is provided on the plurality of projection electrodes and / or the semiconductor device. The method for mounting a semiconductor device according to any one of claims 1 to 11 , wherein the semiconductor device is attached to inside of the plurality of terminal electrodes of the circuit board. The protruding electrode 13. The semiconductor device includes a two-stage projection shape or a substantially implementation of any of the semiconductor device claims 1 to 12, wherein the convex. 14. shape first insulating resin is cured by the first insulating resin curing step claims 1 to either 13 wherein the semiconductor, characterized in that a clutch-type or drum-type How to mount the device.