JP2822662B2 - Measurement method of semiconductor acceleration detector - Google Patents

Description

Description: TECHNICAL FIELD The present invention relates to a measuring method of a semiconductor acceleration detecting device.

[Conventional technology]

FIG. 2 is an operation explanatory view showing an outline of a measuring method of a conventional semiconductor acceleration detecting device.

That is, in the configuration of the conventional device shown in FIG.
Denotes a semiconductor acceleration detecting device, 2 denotes a vibrator for vibrating the semiconductor acceleration detecting device 1, 3 denotes a mounting board on which the semiconductor acceleration detecting device 1 is mounted, and 4 denotes a semiconductor acceleration detecting device 1 via the mounting substrate 3. Is a vibration shaft that is connected to and fixed to the vibration device 2.

Reference numeral 5 denotes a main axis (Y-axis) direction which is the axis direction having the highest acceleration detection sensitivity, 6 denotes a first other axis (X-axis) direction which is one axis direction orthogonal to the Y-axis direction, and 7 denotes the same. A second other axis (Z axis) direction, which is the other axis direction, is shown respectively,
Further, 8 is a vibration direction with respect to the semiconductor acceleration detecting device 1, and 9 is a gravity direction.

Next, a description will be given of a measuring method using the conventional apparatus having the above-described configuration.

Referring to FIG. 2, in this conventional method, the semiconductor acceleration detecting device 1 is mounted on the mounting board 4 such that the X-axis direction 6 coincides with the vibration direction 8 of the vibrator 2 and the direction of gravity 9. In this state, the vibrator 2 is operated and the semiconductor acceleration detecting device 1 is vibrated in this state, so that the acceleration sensitivity in the X-axis direction of the semiconductor acceleration detecting device 1 is reduced. Similarly, the mounting substrate 4 can be measured and detected so that the Z-axis direction 7 coincides with the vibration direction 8 of the vibrator 2 and the gravitational direction 9.
The semiconductor acceleration detecting device 1 is fixed to the semiconductor acceleration detecting device 1 in this state, and in this state, the vibrator 2 is operated and the semiconductor acceleration detecting device 1 is vibrated, whereby the Z in the semiconductor acceleration detecting device 1 is changed. The acceleration sensitivity in the axial direction can be measured and detected.

[Problems to be solved by the invention]

However, in the conventional method for measuring a semiconductor acceleration detecting device performed as described above, the semiconductor acceleration detecting device must be vibrated by a vibrator, and thus the device configuration itself becomes complicated, and There are also problems such as poor measurement accuracy.

SUMMARY OF THE INVENTION The present invention has been made to solve such a conventional problem, and an object of the present invention is to provide a first and second other axes without vibrating a semiconductor acceleration detecting device. An object of the present invention is to provide a measurement direction of a semiconductor acceleration detecting device of this kind, which can measure the acceleration sensitivity in a direction easily and with high accuracy.

[Means for solving the problem]

In order to achieve the above object, a method for measuring a semiconductor acceleration detecting device according to the present invention provides an acceleration detecting direction in a semiconductor acceleration detecting device in which an axis direction having the highest acceleration detection sensitivity is set as a main axis (Y axis) direction. Two axial directions orthogonal to the axial direction are respectively defined as first and second other axes (X axis, Z axis).
When the output per gravity acceleration in the Y-axis direction is the Y-axis sensitivity (S _Y ), the semiconductor acceleration detection device is installed so that the X-axis direction and the gravity acceleration direction coincide. Then, the acceleration output (S _X1 ) is measured, and the semiconductor acceleration detecting device is moved around the Z axis or the Y axis.
After rotating 180 °, the acceleration output (S _X2 ) is measured. From these results, (S _X1 −S _X2 ) / (2 · S _Y ) is set as the acceleration sensitivity of the first other axis (X axis). Then, a semiconductor acceleration detecting device is installed so that the Z-axis direction and the gravity acceleration direction coincide with each other, its acceleration output (S _Z1 ) is measured, and the semiconductor acceleration detecting device is connected to the X-axis or Y
Rotate 180 ° about the axis and measure the acceleration output (S _Z2 ). From these results, (S _Z1 −S _Z2 ) / (2 · S _Y )
Is obtained as the acceleration sensitivity of the second other axis (Z-axis).

[Action]

Accordingly, in the case of the measuring method of the semiconductor acceleration detecting device according to the present invention, the respective measuring operations before and after the rotation result in the main axis (Y-axis) direction and the first and second respective directions. Since the direction on the non-measuring side on the other axis (X axis, Y axis) is orthogonal to the direction of gravity, the gravitational acceleration is
Is added only in the direction of the measurement side in each of the other axes (X axis, Y axis). Therefore, {(output before rotation−output after rotation) / 2 · spindle sensitivity} The acceleration sensitivity in each of the first and second other axes (X axis, Y axis) can be measured with high accuracy.

〔Example〕

Hereinafter, an embodiment of a measuring method of a semiconductor acceleration detecting device according to the present invention will be described in detail with reference to FIG.

FIG. 1 is an operation explanatory view showing an outline of a measuring method of a semiconductor acceleration detecting device to which an embodiment of the present invention is applied.

That is, in the configuration of the embodiment of FIG.
11 is a semiconductor acceleration detecting device, 12 is a rotating device for rotating the semiconductor acceleration detecting device 11 to a predetermined rotation angle position, here, 180 ° position, and 13 is a semiconductor acceleration detecting device.
The mounting rotary board for mounting the 11, the semiconductor rotary acceleration detecting device 11 via the mounting rotary board 13
This is a rotating shaft that is connected to and fixed to.

Reference numeral 15 denotes a main axis (Y-axis) direction which is the axis direction having the highest acceleration detection sensitivity, 16 denotes a first other axis (X-axis) direction which is one axis direction orthogonal to the Y-axis direction, and 17 denotes the same. A second other axis (Z axis) direction, which is the other axis direction, is shown respectively,
Further, 18 indicates the direction of gravity.

Next, a description will be given of a measuring method in the embodiment device having the above configuration.

Referring to FIG. 1, in the measurement method according to the embodiment, in this case, regarding the acceleration detection direction in the semiconductor acceleration detection device, first, the axis direction having the highest acceleration detection sensitivity is set to the Y-axis direction 15 as described above. In addition, two axis directions to be measured orthogonal to the Y-axis direction 15 are set as an X-axis direction 16 and a Z-axis direction 17, respectively.
The output per gravitational acceleration is defined as Y-axis sensitivity (S _Y ).

In the method of this embodiment, first, the Z-axis direction
The direction position is selected so that 17 and the Y-axis direction 15 are orthogonal to the gravitational direction 18, and the acceleration output in the X-axis direction 16 is provided in a state where the semiconductor acceleration detection device 11 is attached and fixed to the attached rotating board 13. (S _X1 ) can be detected and measured.
By operating the rotating device 12, the semiconductor acceleration detecting device 11 is rotated by 180 ° about the X axis (16) (or the Y axis (15) by changing the selection of the direction position), and the X axis is rotated. The acceleration output (S _X2 ) in the direction opposite to the direction 16 can be detected and measured. Based on the difference between these two outputs, the following equation is obtained from the following equation: (S _X1 −S _X2 ) / ( 2 · S _Y ), that is, {(output before rotation−output after rotation) / 2 · spindle sensitivity}, the X-axis direction 16, that is, the first other-axis direction 16
Acceleration sensitivity can be obtained.

In the same manner as described above, first, a direction position is selected so that the X-axis direction 16 and the Y-axis direction 15 are orthogonal to the gravitational direction 18, and the semiconductor acceleration detecting device 11 in the mounting fixed state can be measured by detecting the Z-axis direction 17 facing the acceleration output (S _Z1), then by actuating the rotating device 12, Z-axis the semiconductor acceleration detecting device 11 (17) ( Alternatively, it is possible to detect and measure the acceleration output (S _Z2 ) in the opposite direction of the Z-axis direction 17 in a state of being rotated by 180 ° about the Y-axis (15) by changing the selection of the direction position. From the difference between these two outputs,
In this case, according to the following equation, (S _Z1 −S _Z2 ) / (2 · S _Y ), the Z axis direction 17, that is, the second other axis direction 17 is obtained.
Acceleration sensitivity can be obtained.

〔The invention's effect〕

As described above in detail, according to the method of the present invention, with respect to the acceleration detection direction in the semiconductor acceleration detection device, the axis direction having the highest acceleration detection sensitivity is defined as the main axis (Y-axis) direction,
The two axis directions orthogonal to the Y axis direction are respectively the first and the second.
When the output per gravitational acceleration in the Y-axis direction is Y-axis sensitivity (S _Y ) in the second other axis (X-axis, Z-axis) direction, the X-axis direction matches the gravitational acceleration direction. As if
A semiconductor acceleration detector is installed and its acceleration output (S
_X1 ) is measured, and the semiconductor acceleration detector is connected to the Z axis,
Alternatively, the acceleration output (S _X2 ) is rotated by 180 ° about the Y-axis, and (S _X1 −S _X2 ) is obtained from these results.
/ (2 · S _Y ) can be obtained as the acceleration sensitivity of the first other axis (X axis). On the other hand, the semiconductor acceleration detecting device is set so that the Z axis direction and the gravitational acceleration direction coincide with each other. After installing the sensor, measure its acceleration output (S _Z1 ) and connect the semiconductor acceleration detector to the X-axis or Y-axis.
After rotating by 0 °, the acceleration output (S _Z2 ) is measured, and from these results, (S _Z1 −S _Z2 ) / (2 · S _Y ) is also converted to the second other axis (Z axis). Can be obtained as the acceleration sensitivity.

That is, in the case of the measuring method according to the present invention, each of the above-mentioned measuring operations before and after rotation results in the main axis (Y-axis) direction and the first and second other axes (X Axis, Y
Axis) is orthogonal to the direction of gravity, so the applied gravitational acceleration is
It acts only in the direction of the side to be measured in each of the second other axes (X axis, Y axis). Therefore, in this example, {(output before rotation−output after rotation) / 2 · spindle sensitivity} Acceleration sensitivities on these first and second other axes (X axis, Y axis) can be measured with good accuracy and good accuracy, and the apparatus configuration itself is simplified as compared with the conventional one. Therefore, it has excellent features such as being able to be provided at a low cost.

[Brief description of the drawings]

FIG. 1 is an operation explanatory view showing an outline of a measuring method of a semiconductor acceleration detecting device to which one embodiment of the present invention is applied, and FIG. 2 is an operation showing an outline of a measuring method of a conventional semiconductor acceleration detecting device. FIG. 11 ... Semiconductor acceleration detector, 12 ... Rotating device, 13 ... Rotating substrate, 14 ... Rotating axis. 15: Main axis (Y axis) direction, 16: First other axis (X axis) direction, 17: Second second axis (Z axis) direction, 18: Gravity direction.

──────────────────────────────────────────────────続 き Continued on front page (58) Field surveyed (Int.Cl. ⁶ , DB name) G01P 21/00

Claims (1)

(57) [Claims] 1. An acceleration detection direction in a semiconductor acceleration detection device, wherein an axis direction having the highest acceleration detection sensitivity is defined as a main axis (Y-axis) direction, and two axis directions orthogonal to the Y-axis direction are defined as first and second axes, respectively.
1. When the output per gravity acceleration in the Y-axis direction is Y-axis sensitivity (S _Y ) in the second other axis (X-axis, Z-axis) direction, the X-axis direction and the gravitational acceleration direction Is set to match the acceleration acceleration output (S _X1 )
Is measured, and the semiconductor acceleration detecting device is rotated by 180 ° about the Z axis or the Y axis, and the acceleration output (S
_X2 ) was measured, and based on these results, (S _X1 −S _X2 ) / (2
· S _Y ) is determined as the acceleration sensitivity of the first other axis (X axis). Subsequently, a semiconductor acceleration detection device is installed so that the Z axis direction matches the gravity acceleration direction, and its acceleration output ( S _Z1 ) and measure the semiconductor acceleration detection device with X
The axis or the Y axis is rotated 180 °, the acceleration output (S _Z2 ) is measured, and from these results, (S _Z1 −S
_A method for measuring a semiconductor acceleration detecting device, wherein _Z2 ) / (2 · S _Y ) is obtained as acceleration sensitivity of a second other axis (Z axis).