JP2763446B2 - Package for storing semiconductor elements - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement in a semiconductor device housing package for housing a semiconductor device.

[0002]

2. Description of the Related Art Conventionally, a semiconductor device housing package for housing a semiconductor device is made of an electrically insulating material such as alumina ceramic as shown in FIG. Tungsten, molybdenum derived from around the mounting portion 11a to the bottom surface,
Metallized wiring layer made of high melting point metal powder such as manganese
An insulating substrate 11 having a metal frame 13 joined via a brazing material such as silver brazing so as to surround a mounting portion 11a on which the semiconductor element of the insulating substrate 11 is mounted;
13 and a metal lid 14 bonded to the upper surface of the semiconductor substrate 13.
15 is mounted and fixed via an adhesive such as brazing material, glass, resin, etc., and then the respective electrodes of the semiconductor element 15 are connected to the metallized wiring layer 12.
Then, a lid 14 is joined to the upper surface of the metal frame 13 by employing a welding method such as a seam welding method, and then the insulating base 11 and the metal frame are connected. A semiconductor device as a final product is obtained by hermetically housing the semiconductor element 15 in a container including the lid 13 and the lid 14.

The metal frame 13 is usually made of a metal such as Kovar metal or 42 alloy, and is formed by rolling an ingot (lumps) of Kovar metal or the like into a plate having a predetermined thickness by a rolling process and punching out the same. It is formed by punching into a frame shape by a method.

[0004]

However, in this conventional package for housing a semiconductor element, a metal frame is required.
13 is formed by punching a plate made of Kovar metal or the like into a predetermined frame shape by a punching press method,
When forming the metal frame 13 by a punching press method,
In view of the workability of the punching, the width W must be larger than the thickness t. Therefore, when it is desired to join the metal frame 13 having a large thickness t to the upper surface of the insulating base 11, the width of the metal frame 13 is inevitably increased, and as a result, the overall shape of the semiconductor element storage package becomes large. Thus, there has been a drawback that the mounting of such devices on communication devices and the like, which are becoming smaller in recent years, becomes difficult.

[0005] In order to solve the above-mentioned drawbacks, a metal frame
It is conceivable to use a squeeze press working method which can work with the width W smaller than the thickness t instead of forming the 13 by the punch press method. However, when the metal frame 13 is formed by squeezing and pressing, the upper inner surface of the metal frame 13 becomes a curved surface, and the lid 14 is placed on the upper surface of the metal frame 13, and both are seamed. When joining by welding such as a welding method, the lid 14 slides on the metal frame 13 and cannot join them securely. As a result, the insulating base 11 and the metal frame 13 and the lid 14 The hermetic sealing of the container thus formed is incomplete, causing a disadvantage that the semiconductor element 15 housed therein cannot be operated normally and stably for a long period of time.

[0006]

SUMMARY OF THE INVENTION The present invention has been devised in view of the above-mentioned drawbacks, and has as its object to reduce the size of a semiconductor device and to allow the semiconductor device contained therein to operate normally and stably for a long period of time. To provide packages for

[0007]

SUMMARY OF THE INVENTION The present invention provides an insulating base having a mounting portion on which a semiconductor element is mounted, a metal frame joined to the insulating base so as to surround the mounting portion, and the metal frame. A package for storing semiconductor elements, comprising a lid joined to an upper surface of a body, wherein the metal frame is formed by laminating a plurality of frame members formed by a punching press method, or a first member formed by a pressing method. And a second frame member formed by a punching press method is laminated on the upper surface of the frame member.

[0008]

According to the semiconductor device storage package of the present invention, a plurality of frame members formed by punching and pressing a metal frame are punched on the upper surface of the first frame member formed by pressing and pressing. Since the second frame member formed by the pressing method is formed by lamination, the width can be reduced, and the height can be increased,
As a result, it is possible to reduce the size of the package for storing the semiconductor element to the required minimum size and to reduce the size.

In addition, the metal frame has a flat upper surface, and the lid is securely joined to the metal frame. The reliability of hermetic sealing of the semiconductor element is greatly improved, and It can be operated normally and stably for a long time.

[0010]

BRIEF DESCRIPTION OF THE DRAWINGS FIG. FIG. 1 shows an embodiment of a package for housing a semiconductor element according to the present invention, wherein 1 is an insulating base made of an electrically insulating material, and 2 is a lid.

The insulating base 1 has a mounting portion 1a on which the semiconductor element 3 is mounted at the center of the upper surface, and the semiconductor element 3 is mounted on the mounting portion 1a via an adhesive such as resin, glass, brazing material or the like. Mounted and fixed.

The insulating substrate 1 is made of, for example, alumina ceramics, and is made of alumina (Al ₂ O ₃ ) silica (SiO ₂ ).
, Calcia (CaO), magnesia (MgO) and other suitable raw materials are mixed with an appropriate organic solvent and solvent to form a slurry, which is then formed into a ceramic green by employing a conventionally known doctor blade method or calender roll method. A sheet (ceramic green sheet) is formed, and thereafter, the ceramic green sheet is subjected to an appropriate punching process, a plurality of sheets are laminated, and fired at a high temperature (about 1600 ° C.).

A plurality of metallized wiring layers 4 extending from the periphery of the mounting portion 1a on which the semiconductor element 3 is mounted to the bottom surface are formed on the insulating base 1, and the semiconductor element mounting portion 1a of the metallized wiring layer 4 is formed. Semiconductor element 3 around
These electrodes are electrically connected via bonding wires 5, and a portion led out to the bottom surface of the insulating base 1 is attached and connected to a wiring conductor of an external electric circuit board via a brazing material such as solder.

The metallized wiring layer 4 is made of tungsten
(W), molybdenum (Mo), manganese (Mn) and other high melting point metal powder, a suitable organic solvent to the high melting point metal powder, a metal paste obtained by adding and mixing a solvent, a conventionally well-known screen printing method By adopting a thick film technique such as that described above and previously attaching the ceramic green sheet to be the insulating substrate 1, the insulating substrate 1 is formed so as to be led out from the periphery of the semiconductor element mounting portion 1a to the bottom surface.

The metallized wiring layer 4 is formed by plating a metal having good conductivity and excellent corrosion resistance, such as nickel or gold, to a thickness of 1.0 to 20.0 μm on the exposed outer surface by plating. In addition, the oxidation corrosion of the metallized wiring layer 4 can be effectively prevented and the metallized wiring layer 4 can be effectively prevented.
Connection between metal and bonding wire 5 and metallized wiring layer
The connection between 4 and the wiring conductor of the external electric circuit board is extremely strong. Therefore, oxidation corrosion of the metallized wiring layer 4 is prevented, and the metallized wiring layer 4 and the bonding wire are prevented.
To ensure a strong connection between the metallized wiring layer 4 and the connection between the metallized wiring layer 4 and the wiring conductor of the external electric circuit board, the exposed outer surface of the metallized wiring layer 4 is made of nickel, gold or the like having a thickness of 1.0 to 20.0 μm. It is preferable to make a layer.

A metal frame 6 is provided on the upper surface of the insulating base 1.
Are joined so as to surround the semiconductor element mounting portion 1a, and the metal frame 6 is attached to the semiconductor element 3 together with the insulating base 1.
And acts to form a cavity for accommodating the air.

The metal frame 6 has a structure in which a first frame member 6a and a second frame member 6b are laminated, and the first frame member 6a
And the second frame member 6b is, for example, Kovar metal (Fe-Ni-Co
Alloy) or 42 alloy (Fe-Ni alloy), etc., formed by punching out a metal plate of the same size and width by a punching press method and laminating the first and second frame members 6a and 6b. Body 6 is twice as high as its width. Therefore, according to the package for housing a semiconductor element, even if the height of the metal frame 6 is increased, the width does not greatly expand, and the package can be made as small as possible.

The metal frame 6 is formed by laminating first and second frame members 6a and 6b formed by a punching press method, and the upper surface thereof is flat. Therefore, when the lid 2 is joined to the upper surface of the metal frame 6 to be described later by welding such as a seam-welt method, the joining between the two becomes reliable and strong, and as a result, the reliability of hermetic sealing of the semiconductor element 3 is greatly improved. And the semiconductor element 3 can be operated normally and stably for a long period of time.

The metal frame 6 is bonded to the upper surface of the insulating substrate 1 by previously applying a metallized metal layer to the outer peripheral portion of the upper surface of the insulating substrate 1 and then applying a brazing material such as silver brazing to the metallized metal layer. Joined by brazing, and
The first frame member 6a and the second frame member 6b are similarly joined by a brazing material such as silver brazing to form a metal frame 6.

The metal frame 6 is not limited to one formed by laminating a plurality of frame members formed by a punching press method. As shown in FIG. The frame member 6c may be formed by laminating the second frame member 6d formed by the punching press method. In this case, the first frame member 6c formed by the squeezing press method has a curved upper inner surface, but the flat second frame member 6d formed by the punching press method is joined to the upper surface. The upper surface of the metal frame 6 becomes flat, and as a result, the metal frame 6
When the lid 2 is joined to the upper surface of the semiconductor device by welding such as a seam-welt method, the joining of the two becomes reliable and strong, and the reliability of hermetic sealing of the semiconductor device 3 is greatly improved.
3 can operate normally and stably for a long time.

Further, when the metal frame 6 is formed by laminating a first frame member 6c formed by squeezing press working and a second frame member 6d formed by punching pressing, the metal frame 6 With a very narrow width,
In addition, the height can be increased. Therefore, if this metal frame 6 is used, the package for housing the semiconductor element can be made as small as possible.

Thus, according to the package for housing a semiconductor element of the present invention, the semiconductor element 3 is mounted and fixed on the semiconductor element mounting portion 1a of the insulating base 1 via an adhesive, and each electrode of the semiconductor element 3 is connected to the metallized wiring layer 4a. Is electrically connected to the insulating substrate 1 via a bonding wire 5.
A metal lid 2 is placed on a metal frame 6 joined to the upper surface of the container, and the metal lid 2 is joined by welding such as a seam welding method, so that the inside of the container including the insulating base 1, the metal frame 6 and the lid 2 is formed. The semiconductor device as a final product is obtained by hermetically housing the semiconductor element 3 in the housing.

The present invention is not limited to the above-described embodiment, and various changes can be made without departing from the gist of the present invention.

[0024]

According to the semiconductor device housing package of the present invention, the upper surface of the first frame member formed by laminating a plurality of frame members formed by punching and pressing a metal frame or by squeezing press processing. Since the second frame member formed by the punching press method is laminated and formed, even if the height of the metal frame body is increased, the width does not greatly expand, and the package is reduced to the necessary minimum size. I can do it.

The upper surface of the metal frame becomes flat, and when the lid is joined to the upper surface of the metal frame by welding such as a seam-welt method, the joining of the two becomes reliable and strong. The reliability of hermetic sealing is greatly improved,
The semiconductor element can be normally and stably operated for a long time.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing one embodiment of a semiconductor element storage package according to the present invention.

FIG. 2 is a sectional view showing another embodiment of the present invention.

FIG. 3 is a cross-sectional view of a conventional semiconductor element storage package.

[Description of Signs] 1 ... Insulating base 1a ... Semiconductor element mounting section 2 ... Lid 3 ... Semiconductor element 4 ... Metalized wiring layer 6 ... ... metal frame 6a, 6c ... first frame member 6b, 6d ... second frame member

──────────────────────────────────────────────────続 き Continued on front page (58) Field surveyed (Int.Cl. ⁶ , DB name) H01L 23/00-23/26

Claims (1)

(57) [Claims] An insulating base having a mounting portion on which the semiconductor element is mounted; a metal frame joined to the insulating base so as to surround the mounting portion; and an upper surface of the metal frame formed by welding.
Accordingly, a semiconductor element storage package comprising a lid body to be joined, wherein the metal frame body is subjected to a squeezing press working method.
Pressing method on the upper surface of the first frame member formed by pressing
A semiconductor element housing package formed by laminating second frame members formed by molding .