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JP2584546Y2 - Pressure application stage for pressure element measurement - Google Patents

Pressure application stage for pressure element measurement

Info

Publication number
JP2584546Y2
JP2584546Y2 JP1992004022U JP402292U JP2584546Y2 JP 2584546 Y2 JP2584546 Y2 JP 2584546Y2 JP 1992004022 U JP1992004022 U JP 1992004022U JP 402292 U JP402292 U JP 402292U JP 2584546 Y2 JP2584546 Y2 JP 2584546Y2
Authority
JP
Japan
Prior art keywords
pressure
mounting plate
wafer
pressure element
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP1992004022U
Other languages
Japanese (ja)
Other versions
JPH0564784U (en
Inventor
康行 飯田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Seimitsu Co Ltd
Original Assignee
Tokyo Seimitsu Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Seimitsu Co Ltd filed Critical Tokyo Seimitsu Co Ltd
Priority to JP1992004022U priority Critical patent/JP2584546Y2/en
Publication of JPH0564784U publication Critical patent/JPH0564784U/en
Application granted granted Critical
Publication of JP2584546Y2 publication Critical patent/JP2584546Y2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Description

【考案の詳細な説明】[Detailed description of the invention]

【0001】[0001]

【産業上の利用分野】本考案は、半導体ウエハ上に形成
された圧力素子の特性を圧力を加えながら測定するため
の圧力素子測定用圧力印加ステージに関し、特にステー
ジ上での半導体ウエハの位置合わせを容易に行えるよう
にした圧力印加用ステージに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pressure application stage for measuring a pressure element formed on a semiconductor wafer while applying pressure, and more particularly to a positioning of a semiconductor wafer on the stage. The present invention relates to a pressure application stage which can easily perform the pressure application.

【0002】[0002]

【従来の技術】半導体素子の一つに圧力素子と呼ばれる
ものがある。これは圧力を加えることにより電圧を生じ
る材料を組み込んだ素子であり、半導体ウエハ上に回路
も含めて一体に形成される。図6の(a)に示すように
このような圧力素子11は、半導体ウエハ1上に多数形
成される。
2. Description of the Related Art One of semiconductor devices is a device called a pressure device. This is an element incorporating a material that generates a voltage by applying a pressure, and is integrally formed on a semiconductor wafer including a circuit. As shown in FIG. 6A, many such pressure elements 11 are formed on the semiconductor wafer 1.

【0003】半導体ウエハ上に形成された半導体素子
(チップ)を切り離す前に、各素子の特性を測定して不
良チップを後工程から除くことが行われる。通常は電気
的特性について測定するため、各素子の電極パッドに触
針を接触させ、この触針を介して電気信号を入出力して
測定を行う。この触針を電極パッドに接触させる装置が
プロービング装置と呼ばれ、電気信号の発生及び処理を
行うのがICテスタである。
Before separating a semiconductor element (chip) formed on a semiconductor wafer, the characteristics of each element are measured to remove defective chips from a subsequent process. Usually, in order to measure the electrical characteristics, a stylus is brought into contact with the electrode pad of each element, and an electric signal is input / output via the stylus to perform the measurement. A device for bringing the stylus into contact with the electrode pad is called a probing device, and an IC tester generates and processes an electric signal.

【0004】圧力素子が形成された半導体ウエハに対し
て上記のような特性測定を行う場合、実際に圧力を印加
した上での特性を測定する必要がある。そこで図6の
(a)及び(b)に示すように、特製の載置台3上に半
導体ウエハ1を載置して各素子11に圧力を印加した上
で、プローブソケット9の触針91を電極パッドに接触
させて測定を行う。ICテスタはプローブソケット9に
接続される。載置台3は三軸方向に移動可能なXYZ移
動台上に設けられており、触針91を各素子の電極パッ
ドに接触させる。
When the above-described characteristic measurement is performed on a semiconductor wafer on which a pressure element is formed, it is necessary to measure the characteristic after actually applying a pressure. Then, as shown in FIGS. 6A and 6B, the semiconductor wafer 1 is mounted on the special mounting table 3 and pressure is applied to each element 11, and then the stylus 91 of the probe socket 9 is moved. The measurement is performed by contacting the electrode pad. The IC tester is connected to the probe socket 9. The mounting table 3 is provided on an XYZ movable table that can move in three axial directions, and brings the stylus 91 into contact with the electrode pad of each element.

【0005】載置台3には半導体ウエハ1上の各素子1
1の位置に対応する形で開口31が設けられており、各
開口31は連絡穴32により連絡されており、更に接続
口33を通して外部と連絡されている。この接続口33
に真空ポンプを接続して真空圧を印加すると、開口31
に接する素子11の部分に力が加えられるので、この状
態で測定を行う。開口31の大きさは圧力素子11の所
定部分に圧力が印加されるように設定される。空気経路
32を形成するには載置台3を上下に分割した上で加工
を設した後一体化する。空気経路32を全面に渡って大
きくすると真空圧を印加した時に上面に歪みが生じ、そ
れが圧力素子に影響する。従って空気経路32は細い経
路で連絡されている必要がある。
On the mounting table 3, each element 1 on the semiconductor wafer 1 is mounted.
An opening 31 is provided in a form corresponding to the position 1, and each opening 31 is connected by a communication hole 32, and further connected to the outside through a connection port 33. This connection port 33
When a vacuum pump is connected to and a vacuum pressure is applied, the opening 31
Since a force is applied to the portion of the element 11 that is in contact with, measurement is performed in this state. The size of the opening 31 is set so that pressure is applied to a predetermined portion of the pressure element 11. In order to form the air path 32, the mounting table 3 is divided into upper and lower parts, processed, and then integrated. If the air path 32 is enlarged over the entire surface, distortion occurs on the upper surface when a vacuum pressure is applied, which affects the pressure element. Therefore, the air path 32 needs to be connected by a thin path.

【0006】上記より明らかなように、半導体ウエハ1
上の素子11の配列に合わせて載置台3上に開口31を
設ける必要があり、測定時には開口31と素子11の位
置を合わせる必要がある。一つの方法は肉眼で観察しな
がら合わせる方法であるが、半導体ウエハ1は不透明で
あり、各素子11と開口31を合わせるのは容易でな
い。
As is clear from the above, the semiconductor wafer 1
It is necessary to provide an opening 31 on the mounting table 3 in accordance with the arrangement of the elements 11 above, and it is necessary to align the position of the opening 31 with the element 11 during measurement. One method is to match while observing with the naked eye. However, since the semiconductor wafer 1 is opaque, it is not easy to match each element 11 with the opening 31.

【0007】そのため、ウエハ載置板2の基準面21が
基準ガイド4に接触するように押し当てる位置決めは、
これまでは人間がウエハ載置板を押すことによって行っ
ていた。
Therefore, the positioning for pressing the reference surface 21 of the wafer mounting plate 2 so as to contact the reference guide 4 is performed as follows.
Until now, this was done by a human pushing the wafer mounting plate.

【0008】[0008]

【考案が解決しようとする課題】プロービング装置に
は、測定操作の自動化が求められている。そのため図8
に示すようにプロービング装置への半導体ウエハ1の供
給は、格納ボックス101に複数の半導体ウエハを収容
して行う。ボックス101内のウエハ1は搬送装置で一
枚づつ取り出され、ウエハステージ(ウエハチャック)
8上に固定されて触針を有するプローブソケット9の下
に移動され、顕微鏡等を用いてウエハ1と触針との位置
を微調整した後、触針を電極パッドに接触させて測定を
行なう。ウエハ1上のすべての素子の測定終了後、ウエ
ハ1は上記と逆の経路を通って格納ボックス101に戻
される。
The probing apparatus is required to automate the measurement operation. Therefore, FIG.
As shown in (1), the supply of the semiconductor wafer 1 to the probing apparatus is performed by storing a plurality of semiconductor wafers in the storage box 101. The wafers 1 in the box 101 are taken out one by one by a transfer device, and are set on a wafer stage (wafer chuck).
After being moved below the probe socket 9 having the stylus fixed on the probe 8 and finely adjusting the positions of the wafer 1 and the stylus using a microscope or the like, the measurement is performed by bringing the stylus into contact with the electrode pad. . After the measurement of all the elements on the wafer 1 is completed, the wafer 1 is returned to the storage box 101 through the reverse path.

【0009】上記のような半導体ウエハ1の供給の他、
半導体素子の種類に応じたプローブソケットの供給や半
導体素子と触針の位置調整も自動化が図られている。し
かし圧力素子の半導体ウエハを図8に示すウエハ自動供
給機構で供給する場合、ウエハステージ8上に真空圧を
生じる開口を設けても、ウエハステージ8と半導体ウエ
ハとの位置が合致しないため、各素子に圧力を印加する
ことはできない。
In addition to the supply of the semiconductor wafer 1 as described above,
The supply of probe sockets and the adjustment of the positions of the semiconductor element and the stylus according to the type of the semiconductor element are also automated. However, when supplying the semiconductor upper lobe of the pressure element in the wafer autofeed mechanism shown in FIG. 8, be provided with openings resulting vacuum pressure on the wafer stage 8, the wafer stage 8 and the semiconductor weather
Since the position of c does not match, pressure cannot be applied to each element.

【0010】半導体ウエハ1には、通常オリエンテーシ
ョンフラットと呼ばれる切り欠き部分が設けられてお
り、載置台3にガイドを設けてこれにオリエンテーショ
ンフラットを押し当て位置合わせすることが考えられ
る。しかし、半導体ウエハ1は載置台3に密着する必要
があるため、半導体ウエハ1は載置台3の表面内に完全
に入る必要がある上、半導体ウエハ1は薄い板状である
ため、載置台3上の半導体ウエハ1をガイドに押し当て
るような機構を実現するのはかなり難しく、誤って半導
体ウエハ1に傷を発生させる恐れがある。更に、半導体
ウエハ1を載置台3上で滑らせるように移動する場合に
は、半導体ウエハ1の裏面に傷が生じる。圧力素子で
は、このような裏面の傷も大きな問題になる。
The semiconductor wafer 1 usually has an orientation
There is a cutout called a flat
And a guide is provided on the mounting table 3 for orientation.
It is conceivable that the flat
You. However, the semiconductor wafer 1 needs to be in close contact with the mounting table 3.
The semiconductor wafer 1 is completely within the surface of the mounting table 3
And the semiconductor wafer 1 has a thin plate shape
Therefore, the semiconductor wafer 1 on the mounting table 3 is pressed against the guide.
It is quite difficult to realize such a mechanism,
There is a possibility that the body wafer 1 may be damaged. Furthermore, semiconductor
When moving the wafer 1 so that it slides on the mounting table 3
Causes a scratch on the back surface of the semiconductor wafer 1. With pressure element
In such a case, such a scratch on the back surface is also a major problem.

【0011】本考案は上記問題点に鑑みてなされたもの
であり、圧力素子の半導体ウエハに圧力を印加しながら
特性を測定することができるプロービング装置の圧力印
加ステージを自動化が可能なように改良することを目的
とする。
The present invention has been made in view of the above problems, and has been improved to enable automation of a pressure application stage of a probing apparatus that can measure characteristics while applying pressure to a semiconductor wafer of a pressure element. The purpose is to do.

【0012】[0012]

【課題を解決するための手段】上記問題点を解決するた
め、本考案では、半導体ウエハの各圧力素子に対応した
位置に貫通穴を有するとウエハ載置板を用意し、このウ
エハ載置板に半導体ウエハを取り付けて運用する。その
上で、載置台上でウエハ載置板を移動させる手段を備え
る。又は載置台を移動させる手段及び移動する載置台と
一緒に移動するウエハ載置板を停止させる手段を備え
る。 すなわち本考案は、半導体ウエハ上に多数形成され
た圧力素子の特性を各圧力素子に圧力を加えながら測定
するための圧力素子測定用圧力印加ステージにおいて、
半導体ウエハの各圧力素子に対応した貫通穴を有し、側
面に二つの基準面を有するウエハ載置板、貫通穴に対応
する位置に開口を有する相互に連絡した空気経路、及び
基準面が接触される基準ガイドを上面に有する載置台、
空気経路に真空圧を印加するバキューム手段、及びウエ
ハ載置板を載置台上で移動させる載置板移動手段を備
え、圧力素子が貫通穴に対応するように半導体ウエハを
ウエハ載置板上に載置した後、ウエハ載置板の基準面を
基準ガイドに押し当てることにより貫通穴と空気経路の
開口との位置合わせを行い、空気経路より真空圧を印加
して各圧力素子に圧力を印加することを特徴とする。
Means for Solving the Problems To solve the above problems,
Therefore, in the present invention, each pressure element of the semiconductor wafer
If there is a through hole at the position, a wafer mounting plate is prepared.
A semiconductor wafer is mounted on the EHA mounting plate for operation. That
Means for moving the wafer mounting plate on the mounting table
You. Or means for moving the mounting table and the mounting table
Equipped with means for stopping the wafer mounting plate moving together
You. That is, the present invention is formed on a semiconductor wafer in large numbers.
Measure the characteristics of the pressure elements while applying pressure to each pressure element
In the pressure application stage for pressure element measurement to perform
It has through holes corresponding to each pressure element of the semiconductor wafer,
Supports wafer mounting plate with two reference planes on the surface, through hole
An interconnected air path having an opening at a location where
A mounting table having a reference guide on the upper surface with which a reference surface is in contact,
Vacuum means for applying vacuum pressure to the air path;
(C) mounting plate moving means for moving the mounting plate on the mounting table;
The semiconductor wafer so that the pressure elements correspond to the through holes.
After mounting on the wafer mounting plate, the reference surface of the wafer mounting plate is
By pressing against the reference guide, the through hole and air path
Align with opening and apply vacuum pressure from air path
Then, pressure is applied to each pressure element.

【0013】また本考案の別の態様では、載置板移動手
段の替わりに、載置台を移動させる載置台移動手段及び
載置台に載置されて移動するウエハ載置板を停止させる
載置板停止手段を備えることを特徴とする。
In another aspect of the present invention, instead of the mounting plate moving means, a mounting table moving means for moving the mounting table and a mounting plate for stopping the wafer mounting plate mounted and moved on the mounting table. It is characterized by having a stopping means.

【0014】[0014]

【作用】ウエハ載置板は、精密に加工することが可能で
あり、ガイドなどにより載置台との正確な位置決めが可
能である。また、ウエハ載置板へのウエハの取付けは独
立して行うことができるので、例えば、ウエハ載置板の
裏側から見ながら行うことも可能であり、各素子をウエ
ハ載置板の各穴に正確に位置決めすることは比較的正確
に且つ容易に行える。半導体ウエハを載置したウエハ載
置板は、ある程度の方向精度と位置精度で載置台上に載
置されるので、載置板移動手段で基準ガイドに向かって
押せば基準面が基準ガイドに接触して位置決めが行なえ
る。また載置台移動手段により移動する載置台上のウエ
ハ載置板を載置板停止手段で停止させれば、ウエハ載置
板は相対的に基準ガイドに向かって進むので、同様に基
準面が基準ガイドに接触して位置決めが行なえる。
[Function] The wafer mounting plate can be processed precisely.
Yes, accurate positioning with the mounting table is possible with a guide, etc.
Noh. The mounting of the wafer on the wafer mounting plate is independent.
For example, the wafer mounting plate
It is also possible to perform while looking from the back side, and each element is mounted on a wafer.
C It is relatively accurate to accurately position each hole in the mounting plate
And easily. Since the wafer mounting plate on which the semiconductor wafer is mounted is mounted on the mounting table with a certain degree of directional accuracy and positional accuracy, the reference surface comes into contact with the reference guide if it is pushed toward the reference guide by the mounting plate moving means. To perform positioning. Also, if the wafer mounting plate on the mounting table that is moved by the mounting table moving means is stopped by the mounting plate stopping means, the wafer mounting plate relatively moves toward the reference guide. Positioning can be performed by contacting the guide.

【0015】[0015]

【実施例】図7は、ウエハ載置板と載置台3のガイドと
の位置合わせを示す図である。図示のように、半導体ウ
エハ1上の素子11の配列に対応する貫通穴22を有す
るウエハ載置板2に、あらかじめ素子と貫通穴22の位
置を合わせた状態で半導体ウエハ1を載置し、両者を貼
り付ける。ウエハ載置板2の側面には基準面21が設け
られており、この基準面21を基準ガイド4に押し当て
ると載置台3とウエハ載置板2の位置関係が定まる。載
置台3には貫通穴22に対応する穴で開口31が設けら
れており、位置決めした時に貫通穴22と開口31が一
致し、接続口33に真空圧を印加することで各素子11
に圧力が印加される。 ウエハ載置板2は一般的にガラス
製平板で、半導体ウエハ1を取り付ける場合にも裏面よ
り観察しながら行える。従って、半導体ウエハ1の各圧
力素子を貫通穴22に正確に位置決めすることが可能で
あり、しかも容易に行える。ウエハ載置板2は、載置台
3の面と精密に接触するように加工されており、載置台
3の面上を摺動可能で且つ接触した状態で充分な真空圧
が各素子に印加可能である。図1は、上はウエハ載置板
2を移動させる構造を示す図である。半導体ウエハ1は
このウエハ載置板2に貼り付けられて供給される。
FIG . 7 shows a wafer mounting plate and a guide for the mounting table 3.
It is a figure which shows the position alignment. As shown,
It has a through hole 22 corresponding to the arrangement of the elements 11 on Eha 1.
The elements and through holes 22 are previously placed on the wafer mounting plate 2
The semiconductor wafer 1 is placed in a state where it is aligned, and both are attached.
Attach. A reference surface 21 is provided on a side surface of the wafer mounting plate 2.
The reference surface 21 is pressed against the reference guide 4.
Then, the positional relationship between the mounting table 3 and the wafer mounting plate 2 is determined. Loading
An opening 31 is provided in the mounting table 3 with a hole corresponding to the through hole 22.
The through hole 22 and the opening 31 are aligned when positioning is performed.
By applying a vacuum pressure to the connection port 33, each element 11
Is applied. The wafer mounting plate 2 is generally made of glass
When the semiconductor wafer 1 is mounted on a flat plate,
It can be done while observing. Therefore, each pressure of the semiconductor wafer 1
It is possible to accurately position the force element in the through hole 22
Yes, and easily. The wafer mounting plate 2 includes a mounting table
It is machined to make precise contact with the surface of 3
Sufficient vacuum pressure while slidable and in contact on the surface of 3
Can be applied to each element. Figure 1 is a top Ru FIG der showing a structure for moving the wafer mounting plate 2. Semiconductors wafer 1 is supplied attached to the wafer mounting plate 2.

【0016】3は載置台であり、載置面に基準ガイド4
を備えており、上記の基準面21がこの基準ガイド4に
接触して位置決めされ。位置決めされた状態でウエハ載
置板2の貫通穴22に対応する位置に開口31がある。
開口31は空気経路32によって連絡されており、この
空気経路32には真空ポンプ5が接続されており、各開
口31には真空力が印加される。
Reference numeral 3 denotes a mounting table, on which a reference guide 4 is provided.
The reference surface 21 is positioned in contact with the reference guide 4. An opening 31 is provided at a position corresponding to the through hole 22 of the wafer mounting plate 2 in the positioned state.
The openings 31 are connected by an air path 32, and the vacuum pump 5 is connected to the air path 32, and a vacuum force is applied to each opening 31.

【0017】6はウエハ載置板2を移動させる移動手段
であり、押し板61をエアシリンダ62で押す構造にな
っている。ここでウエハ載置板2を押す時のウエハ載置
板2の動作を図2を参照して説明する。ウエハ載置板は
ある程度の方向精度及び位置精度で載置台3上に載置さ
れる。これを押し板61で押す。基準ガイド4は押し板
61で押す方向に対して45°をなしており、基準面2
1が基準ガイド4の面にほぼ平行になるように載置され
る。
Reference numeral 6 denotes a moving means for moving the wafer mounting plate 2, which has a structure in which a pressing plate 61 is pressed by an air cylinder 62. Here, the operation of the wafer mounting plate 2 when pushing the wafer mounting plate 2 will be described with reference to FIG. The wafer mounting plate is mounted on the mounting table 3 with a certain degree of directional accuracy and positional accuracy. This is pushed by the push plate 61. The reference guide 4 makes an angle of 45 ° with respect to the pressing direction of the pressing plate 61, and the reference surface 2
1 is placed so as to be substantially parallel to the surface of the reference guide 4.

【0018】載置される位置は、図2で一点鎖線で示す
線上が理想的であるが、たとえずれても図示のように押
し板61によって押され、まず左側の基準ガイド4と基
準面21が接触する。その後左側の基準ガイド4に沿っ
て移動し、上方の基準ガイドに接触して停止する。押し
板61を押すのはエアシリンダ62であり、その押し圧
を適当に設定することによりウエハ載置板2は載置台3
の上面を摺動し、一方の基準ガイドに接触した後もその
まま摺動し、両方の基準ガイド4に接触した時に停止す
る。従ってウエハ載置板2と載置台3の上面、基準ガイ
ド4の面、及び押し板61との接触面は容易に摺動可能
なように加工されていることが必要である。
Ideally, the mounting position is on a line indicated by a dashed line in FIG. 2, but even if it is displaced, it is pushed by the push plate 61 as shown in FIG. Contact. Thereafter, it moves along the reference guide 4 on the left side and contacts the upper reference guide and stops. An air cylinder 62 pushes the pressing plate 61, and by appropriately setting the pressing pressure, the wafer mounting plate 2
And slides as it is after contacting one of the reference guides, and stops when it comes into contact with both reference guides 4. Therefore, the upper surfaces of the wafer mounting plate 2 and the mounting table 3, the surface of the reference guide 4, and the contact surface with the pressing plate 61 need to be processed so as to be easily slidable.

【0019】ウエハ載置板2の載置方向がずれた場合に
は、ウエハ載置板2が押されて基準ガイドに接触した時
にウエハ載置板2を回転させる力が働き、基準面21と
基準ガイド4が接触する。ウエハ載置板2の載置位置の
許容誤差範囲はウエハ載置板2の中心が押し板61の幅
内にある範囲である。
When the mounting direction of the wafer mounting plate 2 is deviated, a force for rotating the wafer mounting plate 2 when the wafer mounting plate 2 is pushed and comes into contact with the reference guide acts, and the reference surface 21 and the reference surface 21 are displaced. The reference guide 4 comes into contact. The allowable error range of the mounting position of the wafer mounting plate 2 is a range where the center of the wafer mounting plate 2 is within the width of the push plate 61.

【0020】次にウエハ載置板2を図3に示すような二
点で接触する押し板で押す場合を考えてみる。この場合
ウエハ載置板2の位置は、押し板61の二つの接触点及
び基準ガイド4の二つの接触面のうちの三つで規定され
るため、図3に示すように基準ガイド4の一方に接触し
ないことも起こり得る。従って正確な位置決めが行えず
好ましくないが、基準ガイド4と押し板61との方向及
び位置関係が充分な精度を有すれば実際には問題ない。
Next, consider a case where the wafer mounting plate 2 is pushed by a push plate that contacts at two points as shown in FIG. In this case, since the position of the wafer mounting plate 2 is defined by three of the two contact points of the push plate 61 and the two contact surfaces of the reference guide 4, as shown in FIG. It can also happen that no contact is made. Therefore, accurate positioning cannot be performed, which is not preferable. However, if the direction and the positional relationship between the reference guide 4 and the pressing plate 61 have sufficient accuracy, there is no practical problem.

【0021】図1の実施例では、押し板61は一個であ
り、エアシリンダ62も一個であったが、図4に示すよ
うに押し板63と65、及びエアシリンダ64と66を
組み合わせて二方向からウエハ載置板2を押すようにし
てもよい。この場合一方向のみに移動させて一方の基準
ガイドにエアシリンダの力で押し付けた状態でもう一方
の方向に移動させるのは摩擦力が大きくなるため好まし
くない。そこで一方に押し付けた後は、力を解除しても
う一方の方向に移動するか、図4のようにそれぞれの押
し板を同時又は交互に動作させて、図の一点鎖線に沿っ
て移動させることが望ましい。
In the embodiment shown in FIG. 1, the number of push plates 61 is one and the number of air cylinders 62 is one. However, as shown in FIG. 4, the number of push plates 63 and 65 and the number of air cylinders 64 and 66 are combined. The wafer mounting plate 2 may be pushed from the direction. In this case, it is not preferable to move in only one direction and move it in the other direction while being pressed against one of the reference guides by the force of the air cylinder because the frictional force increases. Therefore, after pressing on one side, release the force and move in the other direction, or move each push plate simultaneously or alternately as shown in Fig. 4 and move it along the dashed line in the figure. Is desirable.

【0022】以上はウエハ載置板2を移動させる場合で
あるが、載置台3を移動させ、その上に載置されている
ウエハ載置板2を停止させれば、ウエハ載置板2を載置
台3に対して移動させることになる。これでも位置合わ
せが可能であり、図5はこのような実施例を示す図であ
る。図5において、7はウエハ載置板2を停止させる部
材で、載置台3の移動方向に対して垂直な接触面を有し
ている。この場合も基準ガイド4は載置台3の移動方向
に対して45°の角度をなす接触面を有している。載置
台3の移動に伴うウエハ載置板2の動作は図1の実施例
と同様であり、図2から図4を参照した説明についても
同様である。
The above is a case where the wafer mounting plate 2 is moved. If the mounting table 3 is moved and the wafer mounting plate 2 mounted thereon is stopped, the wafer mounting plate 2 is moved. It will be moved with respect to the mounting table 3. Positioning is still possible, and FIG. 5 shows such an embodiment. In FIG. 5, reference numeral 7 denotes a member for stopping the wafer mounting plate 2, which has a contact surface perpendicular to the moving direction of the mounting table 3. Also in this case, the reference guide 4 has a contact surface that forms an angle of 45 ° with the moving direction of the mounting table 3. The operation of the wafer mounting plate 2 accompanying the movement of the mounting table 3 is the same as in the embodiment of FIG. 1, and the same applies to the description with reference to FIGS.

【0023】プロービング装置に使用するウエハステー
ジには三軸方向の移動機構が備わっており、図5のよう
な例であれば、停止部材7と基準ガイド4を設け、載置
台3を空気経路を有するものに変更すれば良く、新たに
エアシリンダを設ける必要がないという利点がある。以
上ウエハ載置板2を円形であるものとして説明したが、
この形状に限らず、基準ガイド4に押し当てることで位
置決めするものならばどのようなものでも構わず、手動
によらず位置決め可能とすることで、圧力素子の測定も
より一層自動化を図ることが可能になる。
The wafer stage used in the probing apparatus is provided with a three-axis moving mechanism. In the example shown in FIG. 5, a stop member 7 and a reference guide 4 are provided, and the mounting table 3 is connected to the air path. There is an advantage that the air cylinder need only be changed to the one provided, and it is not necessary to newly provide an air cylinder. As described above, the wafer mounting plate 2 is described as having a circular shape.
The shape of the pressure element is not limited to this shape, and may be anything as long as it is positioned by pressing against the reference guide 4. By enabling positioning without manual operation, the pressure element measurement can be further automated. Will be possible.

【0024】[0024]

【考案の効果】本考案により圧力素子の半導体ウエハを
測定するプロービング装置においてより一層の自動化を
図ることが可能になる。
According to the present invention, it is possible to further automate a probing apparatus for measuring a semiconductor wafer of a pressure element.

【図面の簡単な説明】[Brief description of the drawings]

【図1】ウエハ載置板を押す実施例を示す図である。FIG. 1 is a diagram showing an embodiment in which a wafer mounting plate is pressed.

【図2】図1でのウエハ載置板の移動を説明する図であ
る。
FIG. 2 is a view for explaining movement of a wafer mounting plate in FIG. 1;

【図3】ウエハ載置板を二点で押した時の問題点を説明
する図である。
FIG. 3 is a diagram illustrating a problem when the wafer mounting plate is pressed at two points.

【図4】ウエハ載置板を垂直な二方向から独立して押す
実施例を示す図である。
FIG. 4 is a view showing an embodiment in which a wafer mounting plate is pressed independently from two vertical directions.

【図5】ウエハ載置板を停止させて載置台を移動させる
実施例を示す図である。
FIG. 5 is a view showing an embodiment in which a wafer mounting plate is stopped and a mounting table is moved.

【図6】圧力素子の特性を圧力を加えながら測定するた
めのステージを示す図である。
FIG. 6 is a diagram showing a stage for measuring the characteristics of a pressure element while applying pressure.

【図7】半導体ウエハを載置したウエハ載置板とその基
準面による位置合わせを示す図である。
FIG. 7 is a diagram showing a wafer mounting plate on which a semiconductor wafer is mounted and alignment with a reference surface thereof.

【図8】ウエハ供給を自動化したプロービング装置を示
す図である。
FIG. 8 is a diagram showing a probing apparatus in which wafer supply is automated.

【符号の説明】[Explanation of symbols]

1…半導体ウエハ 2…ウエハ載置板 3…載置台 4…基準ガイド 5…バキューム手段 6…載置板移動手段 7…載置板停止手段 11…圧力素子 21…基準面 22…貫通穴 31…開口 32…空気経路 61…押し板 62…エアシリンダ REFERENCE SIGNS LIST 1 semiconductor wafer 2 wafer mounting plate 3 mounting table 4 reference guide 5 vacuum means 6 mounting plate moving means 7 mounting plate stopping means 11 pressure element 21 reference plane 22 through hole 31 Opening 32: Air path 61: Push plate 62: Air cylinder

───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.6,DB名) G01R 31/26 H01L 21/66 H01L 21/68──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 6 , DB name) G01R 31/26 H01L 21/66 H01L 21/68

Claims (2)

(57)【実用新案登録請求の範囲】(57) [Scope of request for utility model registration] 【請求項1】 半導体ウエハ上に多数形成された圧力素
子の特性を各圧力素子に圧力を加えながら測定するため
の圧力素子測定用圧力印加ステージにおいて、 前記半導体ウエハの各圧力素子に対応した貫通穴を有
し、側面に二つの基準面を有するウエハ載置板、 前記貫通穴に対応する位置に開口を有する相互に連絡し
た空気経路、及び前記基準面が接触される基準ガイドを
上面に有する載置台、 前記空気経路に真空圧を印加するバキューム手段、及び
前記ウエハ載置板を前記載置台上で移動させる載置板移
動手段を備え、 前記圧力素子が前記貫通穴に対応するように前記半導体
ウエハを前記ウエハ載置板上に載置した後、前記ウエハ
載置板の基準面を前記基準ガイドに押し当てることによ
り前記貫通穴と前記空気経路の開口との位置合わせを行
い、前記空気経路より真空圧を印加して各圧力素子に圧
力を印加することを特徴とする圧力素子測定用圧力印加
ステージ。
1. A pressure device for measuring the pressure applied stage for the characteristics measured while applying pressure to the pressure element of a number formed pressure element on a semiconductor wafer, corresponding to the pressure element of the semiconductor wafer through A wafer mounting plate having a hole and two reference surfaces on side surfaces, an interconnected air path having an opening at a position corresponding to the through hole, and a reference guide on the upper surface of which the reference surface is in contact Mounting table, vacuum means for applying a vacuum pressure to the air path, and
A mounting plate transfer for moving the wafer mounting plate on the mounting table.
After the semiconductor wafer is mounted on the wafer mounting plate so that the pressure element corresponds to the through hole, a reference surface of the wafer mounting plate is pressed against the reference guide. A pressure applying stage for pressure element measurement, wherein the through hole is aligned with an opening of the air path, and a vacuum pressure is applied from the air path to apply pressure to each pressure element.
【請求項2】 半導体ウエハ上に多数形成された圧力素
子の特性を各圧力素子に圧力を加えながら測定するため
の圧力素子測定用圧力印加ステージにおいて、 前記半導体ウエハの各圧力素子に対応した貫通穴を有
し、側面に二つの基準面を有するウエハ載置板、 前記貫通穴に対応する位置に開口を有する相互に連絡し
た空気経路、及び前記基準面が接触される基準ガイドを
上面に有する載置台、 前記空気経路に真空圧を印加するバキューム手段、前記載置台を移動させる載置台移動手段、及び 前記載置
台に載置されて移動する前記ウエハ載置板を停止させる
載置板停止手段を 備え、前記圧力素子が前記貫通穴に対
応するように前記半導体ウエハを前記ウエハ載置板上に
載置した後、前記ウエハ載置板の基準面を前記基準ガイ
ドに押し当てることにより前記貫通穴と前記空気経路の
開口との位置合わせを行い、前記空気経路より真空圧を
印加して各圧力素子に圧力を印加することを特徴とする
圧力素子測定用圧力印加ステージ。
2. A pressure device for measuring the pressure applied stage for the characteristics measured while applying pressure to the pressure element of a number formed pressure element on a semiconductor wafer, corresponding to the pressure element of the semiconductor wafer through A wafer mounting plate having a hole and two reference surfaces on side surfaces, an interconnected air path having an opening at a position corresponding to the through hole, and a reference guide on the upper surface of which the reference surface is in contact table, vacuum means for applying a vacuum pressure to the air path, the stage moving means for moving the mounting table, and the placement
Stop the wafer mounting plate that is mounted and moved
After the semiconductor wafer is mounted on the wafer mounting plate such that the pressure element corresponds to the through hole, the reference surface of the wafer mounting plate is pressed against the reference guide. A pressure application stage for measuring a pressure element, wherein the position of the through hole and the opening of the air path is adjusted by applying the pressure, and a vacuum pressure is applied from the air path to each pressure element.
JP1992004022U 1992-02-05 1992-02-05 Pressure application stage for pressure element measurement Expired - Fee Related JP2584546Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1992004022U JP2584546Y2 (en) 1992-02-05 1992-02-05 Pressure application stage for pressure element measurement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1992004022U JP2584546Y2 (en) 1992-02-05 1992-02-05 Pressure application stage for pressure element measurement

Publications (2)

Publication Number Publication Date
JPH0564784U JPH0564784U (en) 1993-08-27
JP2584546Y2 true JP2584546Y2 (en) 1998-11-05

Family

ID=11573343

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1992004022U Expired - Fee Related JP2584546Y2 (en) 1992-02-05 1992-02-05 Pressure application stage for pressure element measurement

Country Status (1)

Country Link
JP (1) JP2584546Y2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230155571A (en) * 2022-01-18 2023-11-10 야마하 로보틱스 홀딩스 가부시키가이샤 Workpiece holding system and workpiece holding device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6236537U (en) * 1985-08-20 1987-03-04
JPH01246842A (en) * 1988-03-29 1989-10-02 Toshiba Corp Device for alignment of semiconductor wafer

Also Published As

Publication number Publication date
JPH0564784U (en) 1993-08-27

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