JP2023018680A - 量子ドット及び、量子ドットを用いた波長変換部材、照明部材、バックライト装置、表示装置、並びに、量子ドットの製造方法 - Google Patents
量子ドット及び、量子ドットを用いた波長変換部材、照明部材、バックライト装置、表示装置、並びに、量子ドットの製造方法 Download PDFInfo
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- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- IOQPZZOEVPZRBK-UHFFFAOYSA-N octan-1-amine Chemical compound CCCCCCCCN IOQPZZOEVPZRBK-UHFFFAOYSA-N 0.000 description 1
- WWZKQHOCKIZLMA-UHFFFAOYSA-M octanoate Chemical compound CCCCCCCC([O-])=O WWZKQHOCKIZLMA-UHFFFAOYSA-M 0.000 description 1
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 1
- 150000002903 organophosphorus compounds Chemical class 0.000 description 1
- AUONHKJOIZSQGR-UHFFFAOYSA-N oxophosphane Chemical compound P=O AUONHKJOIZSQGR-UHFFFAOYSA-N 0.000 description 1
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011116 polymethylpentene Substances 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- IRPLSAGFWHCJIQ-UHFFFAOYSA-N selanylidenecopper Chemical compound [Se]=[Cu] IRPLSAGFWHCJIQ-UHFFFAOYSA-N 0.000 description 1
- 229940065287 selenium compound Drugs 0.000 description 1
- 150000003343 selenium compounds Chemical class 0.000 description 1
- 125000003748 selenium group Chemical group *[Se]* 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 239000004054 semiconductor nanocrystal Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical group [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 150000003498 tellurium compounds Chemical class 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- IYMHCKVVJXJPDB-UHFFFAOYSA-N tributyl(selanylidene)-$l^{5}-phosphane Chemical compound CCCCP(=[Se])(CCCC)CCCC IYMHCKVVJXJPDB-UHFFFAOYSA-N 0.000 description 1
- PHYFQTYBJUILEZ-IUPFWZBJSA-N triolein Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OCC(OC(=O)CCCCCCC\C=C/CCCCCCCC)COC(=O)CCCCCCC\C=C/CCCCCCCC PHYFQTYBJUILEZ-IUPFWZBJSA-N 0.000 description 1
- FIQMHBFVRAXMOP-UHFFFAOYSA-N triphenylphosphane oxide Chemical compound C=1C=CC=CC=1P(C=1C=CC=CC=1)(=O)C1=CC=CC=C1 FIQMHBFVRAXMOP-UHFFFAOYSA-N 0.000 description 1
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- YZYKBQUWMPUVEN-UHFFFAOYSA-N zafuleptine Chemical compound OC(=O)CCCCCC(C(C)C)NCC1=CC=C(F)C=C1 YZYKBQUWMPUVEN-UHFFFAOYSA-N 0.000 description 1
- 229940102001 zinc bromide Drugs 0.000 description 1
- BOXSVZNGTQTENJ-UHFFFAOYSA-L zinc dibutyldithiocarbamate Chemical compound [Zn+2].CCCCN(C([S-])=S)CCCC.CCCCN(C([S-])=S)CCCC BOXSVZNGTQTENJ-UHFFFAOYSA-L 0.000 description 1
- RKQOSDAEEGPRER-UHFFFAOYSA-L zinc diethyldithiocarbamate Chemical compound [Zn+2].CCN(CC)C([S-])=S.CCN(CC)C([S-])=S RKQOSDAEEGPRER-UHFFFAOYSA-L 0.000 description 1
- 229940105125 zinc myristate Drugs 0.000 description 1
- 229940012185 zinc palmitate Drugs 0.000 description 1
- NRINZBKAERVHFW-UHFFFAOYSA-L zinc;dicarbamate Chemical compound [Zn+2].NC([O-])=O.NC([O-])=O NRINZBKAERVHFW-UHFFFAOYSA-L 0.000 description 1
- GPYYEEJOMCKTPR-UHFFFAOYSA-L zinc;dodecanoate Chemical compound [Zn+2].CCCCCCCCCCCC([O-])=O.CCCCCCCCCCCC([O-])=O GPYYEEJOMCKTPR-UHFFFAOYSA-L 0.000 description 1
- GJAPSKMAVXDBIU-UHFFFAOYSA-L zinc;hexadecanoate Chemical compound [Zn+2].CCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCC([O-])=O GJAPSKMAVXDBIU-UHFFFAOYSA-L 0.000 description 1
- NHXVNEDMKGDNPR-UHFFFAOYSA-N zinc;pentane-2,4-dione Chemical compound [Zn+2].CC(=O)[CH-]C(C)=O.CC(=O)[CH-]C(C)=O NHXVNEDMKGDNPR-UHFFFAOYSA-N 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
- GBFLQPIIIRJQLU-UHFFFAOYSA-L zinc;tetradecanoate Chemical compound [Zn+2].CCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCC([O-])=O GBFLQPIIIRJQLU-UHFFFAOYSA-L 0.000 description 1
- DUBNHZYBDBBJHD-UHFFFAOYSA-L ziram Chemical compound [Zn+2].CN(C)C([S-])=S.CN(C)C([S-])=S DUBNHZYBDBBJHD-UHFFFAOYSA-L 0.000 description 1
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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- C—CHEMISTRY; METALLURGY
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
- C09K11/881—Chalcogenides
- C09K11/883—Chalcogenides with zinc or cadmium
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
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Abstract
Description
脂肪族1級アミン系、オレイルアミン:C18H35NH2、ステアリル(オクタデシル)アミン:C18H37NH2、ドデシル(ラウリル)アミン:C12H25NH2、デシルアミン:C10H21NH2、オクチルアミン:C8H17NH2
脂肪酸、オレイン酸:C17H33COOH、ステアリン酸:C17H35COOH、パルミチン酸:C15H31COOH、ミリスチン酸:C13H27COOH、ラウリル酸:C11H23COOH、デカン酸:C9H19COOH、オクタン酸:C7H15COOH
チオール系、オクタデカンチオール:C18H37SH、ヘキサンデカンチオール:C16H33SH、テトラデカンチオール:C14H29SH、ドデカンチオール:C12H25SH、デカンチオール:C10H21SH、オクタンチオール:C8H17SH
ホスフィン系、トリオクチルホスフィン:(C8H17)3P、トリフェニルホスフィン:(C6H5)3P、トリブチルホスフィン:(C4H9)3P
ホスフィンオキシド系、トリオクチルホスフィンオキシド:(C8H17)3P=O、トリフェニルホスフィンオキシド:(C6H5)3P=O、トリブチルホスフィンオキシド:(C4H9)3P=O
本発明では、カドミウムを含まない量子ドットを合成するにあたり以下の原料を用いた。
オクタデセン:Aldrich株式会社製、出光興産株式会社製
オレイルアミン:花王株式会社製
オレイン酸:花王株式会社製
ヨウ化亜鉛:Aldrich株式会社製
酢酸亜鉛2水和物:生駒化学株式会社製
無水酢酸亜鉛:Aldrich株式会社製
テルル(4N:99.99%):新興化学株式会社製、またはAldrich社製
セレン(4N:99.99%):新興化学株式会社製、またはAldrich社製
硫黄:キシダ化学株式会社製
トリオクチルホスフィンオキシド: Aldrich社製
テトラデカン:東京化成(TCI)社製
亜リン酸トリフェニル:Aldrich社製
ヘキサデシルアミン:日油株式会社製
ドデカンチオール:アルケマ社製
蛍光分光計:日本分光株式会社製 F-2700
紫外-可視光分光光度計:日立株式会社製 V-770
量子収率測定装置:大塚電子株式会社製 QE-1100
X線回折装置(XRD):Bruker社製 D2 PHASER
走査線電子顕微鏡(SEM):日立株式会社製 SU9000
100mL反応容器に、無水酢酸銅:Cu(OAc)2 36.3mgとドデカンチオール:DDT 0.5mLと、オレイルアミン:OLAm 0.1mLと、オクタデセン:ODE 4mLを入れた。そして、不活性ガス(N2)雰囲気下で攪拌しながら加熱し、原料を溶解させた。
100mL反応容器に、無水酢酸銅:Cu(OAc)2 36.3mgと、ヘキサデカンチオール:HDT 63.8μLと、オレイルアミン:OLAm 0.1mLと、オクタデセン:ODE 10mLを入れた。そして、不活性ガス(N2)雰囲気下で攪拌しながら加熱し、原料を溶解させた。
100mL反応容器に、無水酢酸銅:Cu(OAc)2 36.3mgと、ドデカンチオール:DDT 5mLを入れた。そして、不活性ガス(N2)雰囲気下で攪拌しながら加熱し、原料を溶解させた。
100mL反応容器に無水酢酸銅:Cu(OAc)2 72.7mgとトリオクチルホスフィンテルリド:Te-TOP溶液(0.5M)0.4mLとトリオクチルホスフィンセレニド:Se-TOP溶液(1M)0.2mLとドデカンチオール:DDT 1mLとオクタデセン:ODE 8mLを入れ、不活性ガス(N2)雰囲気下で攪拌しながら加熱し、原料を溶解させた。
100mL反応容器に無水酢酸銅:Cu(OAc)236.3mgとトリオクチルホスフィンテルリド:Te-TOP溶液(0.5M)0.2mLとドデカンチオール:DDT0.5mLとオクタデセン:ODE 4mLを入れ、不活性ガス(N2)雰囲気下で攪拌しながら加熱し、原料を溶解させた。
100mL反応容器に無水酢酸銅:Cu(OAc)2 36.3mgとトリオクチルホスフィンテルリド:Te-TOP溶液(0.5M)0.2mLとドデカンチオール:DDT 4mLを入れ、不活性ガス(N2)雰囲気下で攪拌しながら加熱し、原料を溶解させた。
100mL反応容器に無水酢酸銅:Cu(OAc)2 0.091gとドデカンチオール:DDT 0.625mLとトリオクチルホスフィン:TOP 0.625mLとトリオクチルホスフィンオキシド:TOPO 0.194gとテトラデカン 10mLを入れ、不活性ガス(N2)雰囲気下で攪拌しながら加熱し、原料を溶解させた。
100mL反応容器にオレイン酸銅:Cu(OLAc)2 (0.5M)0.8mLとトリオクチルホスフィンテルリド:Te-TOP溶液(0.5M)0.4mLとSe-ODE溶液(0.1M)2mLとドデカンチオール:DDT 1mLとオクタデセン:ODE 6.2mLを入れ、不活性ガス(N2)雰囲気下で攪拌しながら加熱し、原料を溶解させた。
100mL反応容器に無水酢酸銅:Cu(OAc)2 0.182gとトリオクチルホスフィンテルリド:Te-TOP溶液(0.5M)1mLとSe-DDT/OLAm溶液(0.285M)0.439mLとドデカンチオール:DDT 2.5mLとオレイルアミン:OLAm 0.25mLとトリオクチルホスフィンオキシド:TOPO 0.387gとオクタデセン:ODE 20mLを入れ、不活性ガス(N2)雰囲気下で攪拌しながら加熱し、原料を溶解させた。
100mL反応容器に無水酢酸銅:Cu(OAc)2 0.091gとドデカンチオール:DDT 0.625mLとトリオクチルホスフィン:TOP 0.625mLとトリオクチルホスフィンオキシド:TOPO 0.194gとオクタデセン:ODE 10mLを入れ、不活性ガス(N2)雰囲気下で攪拌しながら加熱し、原料を溶解させた。
100mL反応容器に無水酢酸銅:Cu(OAc)2 0.091gとドデカンチオール:DDT 1.25mLとトリオクチルホスフィン:TOP 0.625mLとオクタデセン:ODE 10mLを入れ、不活性ガス(N2)雰囲気下で攪拌しながら加熱し、原料を溶解させた。
100mL反応容器に無水酢酸銅:Cu(OAc)2 0.091gとドデカンチオール:DDT 1.25mLとトリオクチルホスフィン:TOP 0.625mLとオクタデセン:ODE 10mLを入れ、不活性ガス(N2)雰囲気下で攪拌しながら加熱し、原料を溶解させた。
100mL反応容器に、無水酢酸銅:Cu(OAc)2 0.182gとトリオクチルホスフィンテルリド:Te-TOP溶液(0.5M)1mLとドデカンチオール:DDT 2.5mLとオクタデセン:ODE 20mLを入れた。そして、不活性ガス(N2)雰囲気下で攪拌しながら加熱し、原料を溶解させた。
100mL反応容器に無水酢酸銅:Cu(OAc)2 0.182gとトリオクチルホスフィンテルリド:Te-TOP溶液(0.5M)1mLとSe-DDT/OLAm溶液(0.285M)0.439mLとドデカンチオール:DDT 2.5mLとオレイルアミン:OLAm 0.25mLとトリオクチルホスフィンオキシド:TOPO 0.387gとオクタデセン:ODE 20mLを入れ、不活性ガス(N2)雰囲気下で攪拌しながら加熱し、原料を溶解させた。
100mL反応容器に、無水酢酸銅:Cu(OAc)2 72.7mgとドデカンチオール:DDT 0.5mLと、オレイルアミン:OLAm 0.1mLと、オクタデセン:ODE 10mLを入れた。そして、不活性ガス(N2)雰囲気下で攪拌しながら加熱し、原料を溶解させた。
100mL反応容器に、アセチルアセトナト銅:Cu(acac)2 131mgと、ドデカンチオール:DDT 1.5mLと、オレイルアミン:OLAm 4.75mLと、オクタデセン:ODE 6.25mLを入れた。そして、不活性ガス(N2)雰囲気下で攪拌しながら加熱し、原料を溶解させた。
100mL反応容器に、無水酢酸亜鉛:Zn(OAc)2 91.7mgと、オクタデセン:ODE 10mL、オレイルアミン:OLAm 3mL、トリオクチルホスフィン:TOP 3mLを入れた。そして、不活性ガス(N2)雰囲気下で攪拌しながら加熱し、原料を溶解させた。
100mL反応容器に、塩化亜鉛無水物:ZnCl2 68.1mgと、オクタデセン:ODE 10mL、オレイルアミン:OLAm 3mL、トリオクチルホスフィン:TOP 3mLを入れた。そして、不活性ガス(N2)雰囲気下で攪拌しながら加熱し、原料を溶解させた。
100mL反応容器に、ステアリン酸亜鉛:Zn(OC(C=O)C17H35)2 316.2mgと、オクタデセン 10mL、オレイルアミン:OLAm 3mL、トリオクチルホスフィン:TOP 3mLを入れた。そして、不活性ガス(N2)雰囲気下で攪拌しながら加熱し、原料を溶解させた。
100mL反応容器に、オレイン酸亜鉛:Zn(OC(=O)C17H33)2 314.2mgと、オクタデセン:ODE 10mL、オレイルアミン:OLAm 3mL、トリオクチルホスフィン:TOP 3mLを入れた。そして、不活性ガス(N2)雰囲気下で攪拌しながら加熱し、原料を溶解させた。
Claims (4)
- Cdを含まず、蛍光半値幅が、40nm以下であり、コアが、ZnTe、ZnTeS、ZnTeSe、或いは、ZnTeSeSで形成される、ことを特徴とする量子ドット。
- 銅カルゴゲニドを前駆体として金属交換反応により合成される、ことを特徴とする請求項1に記載の量子ドット。
- 有機銅化合物、或いは、無機銅化合物と、有機カルコゲン化合物とから、前駆体としての銅カルコゲニドが合成され、前記前駆体を用いて、前記量子ドットが合成される、ことを特徴とする請求項1又は請求項2に記載の量子ドット。
- 前記コアが、ZnTeで形成され、Cuの残存量が100ppm以下である、ことを特徴とする請求項1から請求項3のいずれかに記載の量子ドット。
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JP2020145240A (ja) * | 2019-03-04 | 2020-09-10 | 中原大學 | 発光ダイオードパッケージ構造およびそれを製造する方法 |
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WO2020213094A1 (ja) * | 2019-04-17 | 2020-10-22 | シャープ株式会社 | 電界発光素子、表示装置、及び電界発光素子の製造方法 |
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WO2021029389A1 (ja) * | 2019-08-15 | 2021-02-18 | Nsマテリアルズ株式会社 | 量子ドット、及び、その製造方法 |
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WO2021070858A1 (ja) * | 2019-10-09 | 2021-04-15 | Nsマテリアルズ株式会社 | 量子ドット、及び、その製造方法 |
KR20220110486A (ko) * | 2019-12-02 | 2022-08-08 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 양자 도트, 파장 변환 재료, 백라이트 유닛, 화상 표시 장치 및 양자 도트의 제조 방법 |
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WO2022162840A1 (ja) * | 2021-01-28 | 2022-08-04 | シャープ株式会社 | 量子ドット及び電界発光素子 |
TWI741954B (zh) * | 2021-02-22 | 2021-10-01 | 國立清華大學 | 穩定性佳的量子點及其製作方法 |
JP2023028127A (ja) * | 2021-08-18 | 2023-03-03 | 昭栄化学工業株式会社 | コア/シェル型半導体ナノ粒子の製造方法、及び半導体ナノ粒子複合体 |
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