JP2023048267A - Prober, probe position correction method, probe position correction program and manufacturing method of semiconductor device - Google Patents

Abstract

To provide a prober capable of accurately and stably bringing a probe needle into contact with a semiconductor chip without measuring a temperature.SOLUTION: A prober 100 generates first tip position data of a probe needle 121 at a predetermined time interval during a successive inspection of a semiconductor chip for constructing a transition pattern DB and further generates transition pattern data by arraying the generated first tip position data in time series. The prober 100 generates a transition pattern data group obtained by changing a preset temperature of a wafer chuck for each of transition pattern data. While semiconductor chips are newly successively inspected, the prober 100 then identifies, from a transition pattern data group, transition pattern data including a portion most similar to sub transition data, which are obtained by arraying second tip position data of the probe needle 121 in every predetermined timing in time series, and corrects a relative position based on the identified transition pattern data.SELECTED DRAWING: Figure 7

Description

The present invention relates to a prober, a probe position correction method, a probe position correction program, and a method of manufacturing a semiconductor device.

A large number of semiconductor chips formed on the surface of a semiconductor wafer are tested by a prober. The prober has a function of relatively moving a wafer chuck holding a semiconductor wafer and a probe card having probe needles to bring the probe needles into contact with the electrode pads of the semiconductor chip. A tester interlocking with this prober performs an electrical test of the semiconductor chip through probe needles 121 brought into contact with the electrode pads.

Semiconductor chips to be inspected are used in a wide range of applications, and some are used in a wide temperature range from -40°C to +125°C. Therefore, semiconductor chips may be tested at room temperature (normal temperature), high temperature, and low temperature. In such a case, when the temperature of the wafer chuck is controlled and falls within a predetermined temperature range, the temperature of the semiconductor wafer held on the wafer chuck is also considered to be within the predetermined inspection temperature range, and inspection is started. do.

At the start of testing, the prober first detects the relative position between the tip of the probe needle and the electrode pad of the semiconductor chip, and based on this relative position, the tip of the probe needle can come into contact with the vicinity of the center of the electrode pad. Correct the position of the tip of the probe needle to the reference position.

However, in high-temperature or low-temperature testing, as a large number of semiconductor chips are sequentially tested, the temperature of each portion of the prober other than the wafer chuck gradually changes to approach the temperature of the wafer chuck. As a result, each part including the probe needle deforms due to expansion due to heating or contraction due to cooling, and the relative position between the tip of the probe needle and the electrode pad of the semiconductor chip changes. For this reason, a "probing error" may occur in which the tip of the probe needle does not properly contact the electrode pad of the semiconductor chip.

Specifically, in an inspection at a high temperature or a low temperature, if the three-dimensional coordinates representing the position of the tip of the probe needle are (X, Y, Z), the expansion or contraction of the probe needle and the resin substrate holding the probe needle A positional displacement occurs in each of (X, Y, Z) due to the deflection of . As a result, for example, erroneous judgment of inspection results, deterioration of long-term reliability of semiconductor chips due to probe contact with places other than electrode pads, damage to electrode pads due to excessive probe pressure, wire bonding caused by this damage connection failure, etc. may occur.
In order to avoid these problems, it is conceivable to wait until the expansion or contraction of each part subsides before starting the inspection, but this reduces productivity.

In order to prevent such probing errors, a method of correcting the relative position between the probe needle and the semiconductor chip during the wafer test has been proposed.
As an example, disclosed is a prober that corrects a relative position detected by a displacement amount data generator based on the measurement result of a temperature sensor attached to a probe card (see Patent Document 1).
As another example, the amount of change in the relative position is calculated based on the prediction model obtained from the measurement results of temperature sensors placed at multiple locations and the information on the relative position between the electrode pad and the probe, and the relative position is corrected. A prober is disclosed that does this (see, for example, Patent Documents 2 and 3).

JP-A-2006-173206 JP 2007-311389 A JP 2018-117095 A

However, due to the mechanism of the prober, it is difficult to install the temperature sensors in the vicinity of the semiconductor chip to be tested, and it is necessary to install the temperature sensors at multiple locations to ensure the reliability of the measurement. In this regard, when the temperature sensor is replaced, it may be difficult to correct the relative position if the installation position is shifted before and after the replacement, or if there is individual difference in the temperature sensor. Furthermore, multiple temperature sensors make correction more difficult.

An object of one aspect of the present invention is to provide a prober capable of accurately and stably bringing a probe needle into contact with a semiconductor chip without measuring temperature.

A prober in one embodiment of the present invention comprises:
a probe card having probe needles for contacting semiconductor chips formed on the surface of a semiconductor wafer;
a wafer chuck capable of holding the semiconductor wafer and heating or cooling it to a predetermined set temperature;
a first image acquisition device that acquires a first image including the tip of the probe needle;
a second image acquisition device that acquires a second image including the electrode pads of the semiconductor chip;
moving the wafer chuck holding the semiconductor wafer relative to the probe needle based on the relative positions of the tip of the probe needle and the electrode pad obtained from the first image and the second image; a stage for sequentially contacting the probe needles with the electrode pads;
a prober having
generating first tip position data indicating the position of the tip of the probe needle at predetermined time intervals when the semiconductor chips are sequentially inspected, and arranging the generated first tip position data in time series; a data generation unit that further generates transition pattern data by
a data group constructing unit constructing a transition pattern data group obtained by changing the set temperature of the wafer chuck for each transition pattern data;
including a portion most similar to partial transition data obtained by arranging second tip position data indicating the tip position of the probe needle at each predetermined timing when the semiconductor chips are sequentially inspected anew in time series; a pattern identification unit that identifies the transition pattern data from the transition pattern data group;
a correction unit that corrects the relative position based on the transition pattern data identified by the pattern identification unit;
have

According to one aspect of the present invention, it is possible to provide a prober capable of accurately and stably bringing a probe needle into contact with a semiconductor chip without measuring temperature.

FIG. 1 is a schematic side view showing the structure of the prober in this embodiment. FIG. 2 is a block diagram showing the hardware configuration of the prober in this embodiment. FIG. 3 is a block diagram showing the functional configuration of the prober in this embodiment. FIG. 4 is a flowchart showing the flow of processing for building a transition pattern DB in advance in this embodiment. FIG. 5 is an explanatory diagram showing an example of transition patterns when the relative positions of the tip of the probe needle and the electrode pad gradually shift. FIG. 6 is an explanatory diagram showing an example of the configuration of a transition pattern DB. FIG. 7 is a flow chart showing the flow of processing for correcting the relative position between the tip of the probe and the semiconductor chip in this embodiment.

Hereinafter, one form for carrying out the present invention will be described in detail with reference to the drawings.
In addition, in the drawings, the same components may be denoted by the same reference numerals, and redundant description may be omitted. The drawings are schematic and width, length and depth ratios are not as shown in the drawings.
Also, in the drawings, the X-axis, the Y-axis and the Z-axis are orthogonal to each other. A direction that includes the +X-axis direction and the direction opposite to the +X-axis direction (−X-axis direction) is called the “X-axis direction”, and the +Y-axis direction and the direction opposite to the +Y-axis direction (−Y-axis direction) ) is called the “Y-axis direction”, and the direction including the +Z-axis direction and the direction opposite to the +Z-axis direction (−Z-axis direction) is called the “Z-axis direction” (height direction, thickness direction).
Further, a plane containing the X and Y axes is called an "XY plane", a plane containing the X and Z axes is called an "XZ plane", and a plane containing the Y and Z axes is called a "YZ plane".

A prober in one embodiment of the present invention is a device that implements a probe position correction method in one embodiment of the present invention by executing a probe position correction program in one embodiment of the present invention. Therefore, the description of the probe position correction program and the probe position correction method in one embodiment of the present invention is replaced with the description of the operation of the prober in one embodiment of the present invention.
A method of manufacturing a semiconductor device according to an embodiment of the present invention includes a step of inspecting a semiconductor chip using the prober according to an embodiment of the present invention. is a method of manufacturing Therefore, in the method of manufacturing a semiconductor device according to one embodiment of the present invention, the explanation of the step of inspecting the semiconductor chip is replaced with the explanation of the operation of the prober according to one embodiment of the present invention, and the step of sealing the inspected semiconductor chip. Since general steps are sufficient for the above, the description thereof is omitted.

FIG. 1 is a schematic side view showing the structure of the prober in this embodiment.
As shown in FIG. 1, the prober 100 in this embodiment is a device for testing electrical characteristics of a plurality of semiconductor chips formed on a semiconductor wafer W. Probe needles 121 are connected to a tester (not shown). has a function of sequentially bringing the electrode pads of the semiconductor chip into contact with each other.
This prober 100 has a test head 110 , a probe card 120 , a wafer chuck 130 and a stage 140 .

The test head 110 is a signal connection mechanism with the tester and mechanically holds the probe card 120 .

The probe card 120 includes probe needles 121 that are brought into contact with semiconductor chips formed on the surface of the semiconductor wafer W. As shown in FIG. The probe card 120 is provided with connection terminals (not shown) electrically connected to the probe needles 121 , and the connection terminals are connected to the test head 110 . The tester, which is connected to the test head 110 by a cable or the like, supplies various test signals to the electrode pads of the semiconductor chip through the connection terminals and the probe needles 121, and outputs signals from other electrode pads of the semiconductor chip. By receiving the output signal, it is inspected whether the semiconductor chip operates normally.

The wafer chuck 130 is fixed on the stage 140 and can hold the semiconductor wafer W by various holding methods such as vacuum suction.
Also, the wafer chuck 130 can heat or cool the semiconductor wafer W to a predetermined set temperature by, for example, a heater mechanism, a chiller mechanism, a heat pump mechanism, or the like.

The stage 140 moves in the X-axis direction, the Y-axis direction, and the Z-axis direction in a predetermined space inside the housing of the prober 100 based on a control signal from a stage control section 151b, which will be described later. Further, the stage 140 can rotate about the central axis in the Z-axis direction, and can correct the so-called θ deviation.
Thereby, the stage 140 can relatively move the semiconductor wafer W held by the wafer chuck 130 and the probe needles 121 . Further, the stage 140 can sequentially bring the probe needles 121 into contact with the semiconductor chips on the surface of the semiconductor wafer W held by the wafer chuck 130 by moving in the Z-axis direction.

Also, as will be described later, the prober 100 can detect the positions of the tip of the probe needle 121 and the electrode pad of the semiconductor wafer W with the cameras 160a and 160b, respectively, to obtain relative positions.
As a result, the stage 140 moves to the reference position where the tip of the probe needle 121 can contact the vicinity of the center of the electrode pad based on the obtained relative position before inspecting the semiconductor chip, and performs initial position correction. . Note that the reference position may be a position corresponding to a predetermined set temperature. When the semiconductor chips are sequentially inspected, the stage 140 relatively moves the wafer chuck 130 holding the semiconductor wafer W with respect to the probe needles 121 based on the position data of the semiconductor chips on the semiconductor wafer W. The semiconductor chips on the surface of the wafer W are brought into contact with the probe needles 121 one after another. At the timing when the stage 140 contacts the semiconductor chip with the probe needle 121, the semiconductor chip is inspected in conjunction with the tester.

In this manner, the prober 100 controls the temperature of the wafer chuck 130 and the operation of the stage 140, and operates in conjunction with the tester to measure the electrical characteristics of the semiconductor chips formed on the semiconductor wafer W at a predetermined set temperature. can be inspected individually.

FIG. 2 is a block diagram showing the hardware configuration of the prober in this embodiment.
As shown in FIG. 2, the prober 100 further includes a prober controller 150, a camera 160a as a first image acquisition device, and a camera 160b as a second image acquisition device.

The prober control device 150 includes a processor 151 , a RAM (Random Access Memory) 152 , a ROM (Read Only Memory) 153 , a HDD (Hard Disk Drive) 154 and a communication interface 155 .

The processor 151 is a CPU (Central Processing Unit) or the like, and implements various functions by executing an OS (Operating System) stored in the ROM 153 and HDD 154 and various programs.
This processor 151 is used to control the overall operation of the prober 100, and performs various controls and calculations to execute a probe position correction program 153a stored in the ROM 153. FIG.

The RAM 152 functions as a work area or the like that is expanded when various programs such as a probe position correction program are executed by the processor 151 .

The ROM 153 stores various programs such as a BIOS (Basic Input/Output System) including a probe position correction program 153a.

The HDD 154 is a storage device that stores various programs, various data, and the like. The various types of data include image data, tip position data, probe trace data, and the like, which will be described later.
The HDD 154 also includes a transition pattern DB 154a, which is a database of transition pattern data that is a series of position data of the tips of the probe needles 121 arranged in chronological order.
In addition, hereinafter, the "transition pattern data database" may be referred to as a "transition pattern data group", and the "database" may be referred to as a "DB".
In addition, in this embodiment, the HDD 154 is provided with the transition pattern DB 154a, but without being limited to this, instead of the HDD 154, for example, a solid state drive, a magnetic tape, a portable storage device, a storage device on the network, etc. good. Portable storage devices include, for example, a CD (Compact Disc) drive, a USB (Universal Serial Bus) memory, and the like.

The communication interface 155 transmits various control signals from the processor 151 to the wafer chuck 130, the stage 140 and the cameras 160a and 160b. The communication interface 155 also receives signals from the wafer chuck 130 , the stage 140 and the cameras 160 a and 160 b and outputs them to the processor 151 .

The camera 160a moves the probe needle 121 based on the control signal from the image acquisition unit 151c in order to confirm the position of the tip of the probe needle 121 before and during the semiconductor chip inspection. An image containing the tip (first image) is acquired.
In this embodiment, the camera 160a is fixed to the housing of the prober 100, and acquires an image of the tip of one probe needle 121 out of a plurality of probe needles when the stage 140 moves to the origin position. , but not limited to this.

In order to check the positions of the electrode pads of the semiconductor chip before inspection of the semiconductor chip, the camera 160b captures an image (second image).
During inspection of the semiconductor chip, the camera 160b acquires an image further including probe traces caused by the contact of the probe needle 121 to the electrode pad of the semiconductor chip based on the control signal from the image acquisition unit 151c.
In this embodiment, the camera 160a is fixed to the housing of the prober 100, and acquires an image of the electrode pads of one semiconductor chip out of a plurality of semiconductor chips when the stage 140 moves to the origin position. , but not limited to this.

FIG. 3 is a block diagram showing the functional configuration of the prober in this embodiment.
As shown in FIG. 3, the functions of the processor 151 include a wafer chuck control unit 151a, a stage control unit 151b, an image acquisition unit 151c, a data generation unit 151d, a data group construction unit 151e, and a pattern identification unit 151f. , and a correction unit 151g.

The wafer chuck control unit 151a transmits to the wafer chuck 130 a control signal for holding the semiconductor wafer W or a control signal for adjusting the set temperature.

The stage control unit 151b transmits a control signal for moving in each axial direction or a control signal for rotating to the stage 140 .

The image acquiring unit 151c sends a control signal to the camera 160a to acquire an image including the tip of the probe needle before inspecting the semiconductor chips and at predetermined time intervals during the successive inspection of the semiconductor chips. Send.
Further, the image acquiring unit 151c transmits to the camera 160b a control signal for acquiring an image of the probe mark caused by the probe needle 121 contacting the semiconductor chip at predetermined time intervals while the semiconductor chips are sequentially inspected. .
Then, the image acquisition unit 151c associates the data of the acquired image with the data of the date and time when the image was acquired, and stores the data in the data table of the HDD 154 .

The data generation unit 151d generates various data as follows from the images that the image acquisition unit 151c causes the cameras 160a and 160b to acquire.

Before testing the semiconductor chip, the data generation unit 151d generates pad position data of the electrode pads by performing image processing on an image including the electrode pads. The data generator 151d also generates “tip position data” indicating the position of the tip of the probe needle 121 by performing image processing on the image including the tip of the probe needle.
Thus, the relative position between the tip of the probe needle and the electrode pad can be obtained from the pad position data of the electrode pad and the tip position data of the probe needle 121 before testing the semiconductor chip. Based on the obtained correlation position, the stage control unit 151b moves the stage 140 to move the wafer chuck 130 holding the semiconductor wafer W to the reference position where the tip of the probe needle 121 can come into contact with the vicinity of the center of the electrode pad. It can be moved to make an initial position correction. In addition, by moving the stage 140, the stage control unit 151b can move the wafer chuck 130 holding the semiconductor wafer W relative to the probe needles 121, and sequentially bring the probe needles 121 into contact with the electrode pads.

The data generator 151d also generates probe mark data from an image including probe marks, and further generates tip position data (first tip position data) of the probe needle 121 from the probe mark data. Then, the data generation unit 151d generates transition pattern data by arranging the probe mark data and the first tip position data in time series.

Specifically, the data generator 151d performs image processing on the image including the probe mark, so that the center of the outer shape of the electrode pad is set to the reference coordinates (0, 0) on the XY plane, and the position coordinates of the center of the probe mark are calculated. Find (X, Y). That is, the position coordinates (X, Y) of the center of the probe mark correspond to the position coordinates (X, Y) of the tip of the probe needle 121 .
Further, the data generation unit 151d obtains the size (area) of the probe mark quantified by image processing such as counting the number of dots in the image. Next, the data generation unit 151d refers to a comparison data table indicating the position (height) of the tip of the probe needle 121 in the Z-axis direction with respect to the size of the probe mark obtained, and calculates the position coordinates of the tip of the probe needle 121. Find (Z).

In this way, the data generation unit 151d generates first tip position data ( X, Y, Z).

Next, the data generation unit 151d adds data of the date and time when the image was obtained and data of the set temperature of the wafer chuck 130 to the first tip position data (X, Y, Z) together with the probe mark data. link with Then, the data generation unit 151d arranges the first tip position data along with the series of probe mark data in the data table of the HDD 154 in time series, and generates difference data from the first tip position data generated first in time series. Generates transition pattern data added to subsequent data respectively. This difference data becomes a correction value for returning the position of the tip of the probe needle 121 to the position after the initial position correction when the plus and minus of the coordinates are reversed.
In this embodiment, the first tip position data generated first in time series is used as the reference for the difference data. good.

In addition, in order to construct the transition pattern DB 154a, the data generation unit 151d generates probe trace data obtained when the semiconductor chips are sequentially inspected in advance within a predetermined cumulative inspection time while the wafer chuck 121 is kept at a predetermined set temperature. The first tip position data and the difference data are arranged in time series to generate transition pattern data.

The data group constructing unit 151e constructs a transition pattern data group obtained by changing the set temperature of the wafer chuck 130 for each transition pattern data as a transition pattern DB 154a, and stores it in the HDD 154 in advance.
Specifically, the data group construction unit 151e causes the HDD 154 to store in advance a transition pattern data group as shown in FIG.

After the data group constructing unit 151e constructs the transition pattern DB 154a, when new semiconductor chips are being sequentially inspected, the data generating unit 151d generates the first Second tip position data is generated, and partial transition data is generated by arranging the generated second tip position data in time series.
The pattern identifying unit 151f identifies transitional pattern data including a portion most similar to the partial transitional data generated by the data generation unit 151d from the transitional pattern data group.

The correcting unit 151g automatically corrects the relative position of the semiconductor chip with respect to the probe needle 121 based on the transition pattern data specified by the pattern specifying unit 151f when the semiconductor chips are newly inspected sequentially.
Specifically, the correction unit 151g causes the stage control unit 151b to transmit a control signal for moving in each axial direction using the difference data of the transition pattern data as a correction value.

Next, the process of storing a plurality of pieces of transition pattern data and constructing a transition pattern DB will be described in detail along the flowchart shown in FIG. 4 and with reference to FIGS. 1 to 3, 5 and 6. FIG.

FIG. 4 is a flowchart showing the flow of processing for building a transition pattern DB in advance in this embodiment.
As shown in FIG. 4, first, in order to acquire the transition pattern data, the wafer chuck control unit 151a causes the wafer chuck 130 to hold the semiconductor wafer W, and sets the wafer chuck temperature to −40° C., which is the set temperature. 130 is controlled (step S01).

Next, the image acquisition unit 151c causes the cameras 160a and 160b to respectively acquire images of the tip of the probe needle 121 and the electrode pad of the semiconductor chip. The data generator 151d obtains the relative position between the tip of the probe needle 121 and the electrode pad of the semiconductor chip from the images acquired by the cameras 160a and 160b. Based on this relative position, the stage controller 151b corrects the position of the stage 140 to a reference position where the tip of the probe needle 121 can come into contact with the vicinity of the center of the electrode pad P (step S02).

Next, the stage control unit 151b moves the stage 140 to the position of the semiconductor chip to be inspected first based on the position data of the semiconductor chip (step S03). It is brought into contact with the electrode pad P. At this timing, the tester tests the semiconductor chip (step S04).

The angle at which the tip of the probe needle 121 is brought into contact with the electrode pad of the semiconductor chip is selected from the viewpoint that the electrode pad is less likely to be seriously damaged and the area of the probe trace is likely to change depending on the height of the tip. Rather than making contact in the normal direction of the pad, it is preferable to make the range of a predetermined angle with respect to the normal direction of the electrode pad.
Further, the shape of the probe needle 121 is such that the probe needle 121 tends to have elasticity when the tip of the probe needle 121 is brought into contact with the normal direction of the electrode pad within a predetermined angle range. is preferred.
The range of the predetermined angle is not particularly limited and can be appropriately selected according to the purpose, but is preferably 0° or more and 45° or less.

Next, the prober control device 150 determines whether or not a predetermined time interval has passed since the first inspection or the last acquisition of the probe mark image (step S05).
When the prober controller 150 determines that the predetermined time interval has not elapsed, the stage controller 151b moves the stage 140 to the position of the next semiconductor chip to be inspected based on the semiconductor chip position data (step S06), the stage 140 is raised to bring the probe needle 121 into contact with the electrode pad of the semiconductor chip. At this timing, the tester tests the semiconductor chip (returns to step S04).
When the prober control device 150 determines that the predetermined time interval has passed, the image acquisition unit 151c obtains an image including the probe mark M made on the electrode pad that was last inspected and brought into contact with the probe needle 121. (step S07).

As for the operation of the image acquisition unit 151c in step S07, the image acquisition unit 151c repeatedly acquires an image including the probe mark M at predetermined time intervals T, as shown in FIG. FIG. 5 shows a case where the position of the tip of the probe needle 121 gradually moves to the positive side in each of the X-, Y-, and Z-axis coordinates as the inspection time increases. 5(a) to 5(c) show different viewpoints with respect to the tip of the probe needle 121, and correspond to each other in the vertical direction in the drawing.

Next, the data generation unit 151d generates probe mark data and first tip position data from the image acquired by the image acquisition unit 151c. Then, the data generation unit 151d generates data in the HDD 154 by associating the first tip position data together with the probe trace data with the data of the date and time when the image was obtained and the data of the set temperature of the wafer chuck 130 . Store in the table (step S08).

Next, the prober control device 150 determines whether or not a predetermined cumulative inspection time has passed since the first inspection (step S09).
When the prober control device 150 determines that the predetermined cumulative inspection time has not elapsed, the stage control unit 151b moves the stage 140 to the position of the next semiconductor chip to be inspected based on the semiconductor chip position data ( Step S06), the stage 140 is raised to bring the probe needles 121 into contact with the electrode pads P of the semiconductor chip. At this timing, the tester tests the semiconductor chip (returns to step S04).
When the prober control device 150 determines that the predetermined cumulative inspection time has passed, the data generator 151d arranges the series of probe mark data and the first tip position data in the data table of the HDD 154 in chronological order. , transition pattern data is generated by adding difference data from the first tip position data generated first in time series to subsequent data. The data group construction unit 151e stores the transition pattern data generated by the data generation unit 151d in the transition pattern DB 154a of the HDD 154 (step S10).

In this way, the data group constructing unit 151e constructs the transition pattern DB 154a by storing the transition pattern data obtained by changing the set temperature of the wafer chuck for each transition pattern data in the HDD 154. FIG.
Specifically, as shown in FIG. 6, the data group constructing unit 151e treats a series of probe mark data as one piece of transitional pattern data, groups the pieces of transitional pattern data, and stores them in the transitional pattern DB.

Next, referring to FIGS. 1 to 3, 5, and 6 along the flow chart shown in FIG. while explaining.

FIG. 7 is a flow chart showing the flow of processing for correcting the relative position between the tip of the probe and the semiconductor chip in this embodiment.
The processing from steps S01 to S06 in FIG. 7 is the same as the processing from steps S01 to S06 in FIG. For this reason, in a new inspection, the wafer chuck 130 is controlled to a predetermined set temperature to start the inspection of the semiconductor chip. The description up to the process of storing some data in the data table will be omitted. Below, the contents of step S11, which is the subsequent process, will be described.

In step S05, when the prober control device 150 determines that the predetermined time interval has passed, the image acquisition unit 151c acquires an image including the tip of the probe needle 121 (step S11). Then, the data generator 151d generates second tip position data indicating the position of the tip of the probe needle 121 by image processing from the image including the tip of the probe needle 121 . Then, the data generation unit 151d stores the second tip position data in the data table of the HDD 154 by associating the data of the date and time when the image was acquired and the data of the set temperature of the wafer chuck 130. (Step S12).

Next, the pattern identifying unit 151f determines whether transitional pattern data including a portion most similar to the second tip position data arranged in chronological order up to the present time exists in the transitional pattern data group in the transitional pattern DB 154a. Determine (step S13).

Specifically, the similarity determination performed by the pattern identifying unit 151f compares the difference data of the probe mark data, and determines that the patterns are similar if the similarity is 70% or higher.
However, at the beginning of a new inspection, there is little deviation in the relative position between the tip of the probe needle and the semiconductor chip, and the number of second tip position data is small. There will be a lot of transition pattern data. Therefore, in this embodiment, if the number of transitional pattern data determined to include a similar portion is equal to or greater than a predetermined number, the pattern identifying unit 151f determines that there is no transitional pattern data including a similar portion. .
Note that in the present embodiment, if the number of transitional pattern data determined to include a similar portion is equal to or greater than a predetermined number, it is determined that there is no transitional pattern data including a similar portion. Alternatively, for example, the process may not proceed to step S13 unless the number of pieces of second tip position data in a new examination is equal to or greater than a predetermined number of pieces of data.

In step S13, when the pattern specifying unit 151f determines that there is no similar transition pattern data, the stage control unit 151b moves the stage 140 to the position of the next semiconductor chip to be inspected (step S06). 140 is raised to bring the probe needle 121 into contact with the electrode pad of the semiconductor chip. At this timing, the tester tests the semiconductor chip (returns to step S04).

Further, when the pattern identifying unit 151f determines that there is similar transitional pattern data, if there is only one similar transitional pattern data, the pattern identifying unit 151f identifies that transitional pattern data. If there are multiple pieces of similar transitional pattern data, the pattern identifying unit 151f identifies the most similar transitional pattern data among the plurality of pieces of transitional pattern data.

Next, the correction unit 151f corrects the relative position between the tip of the probe and the semiconductor chip by rewriting the position data of the semiconductor chip after the next inspection based on the transition pattern data specified by the pattern specifying unit 151f ( step S14).
Thereafter, the process returns to step S06, and the stage control unit 151b moves the stage 140 to the position of the semiconductor chip to be inspected next based on the corrected positional information of the semiconductor chip after the next inspection, and raises the stage 140. The probe needle 121 is brought into contact with the electrode pad P of the semiconductor chip, and the tester repeats testing of the semiconductor chip (returning to step S04).

As described above, the prober 100 of the present embodiment sequentially inspects semiconductor chips for a predetermined cumulative inspection time in order to construct a transition pattern DB. One tip position data is generated, and transition pattern data is further generated by arranging the generated first tip position data in time series. The prober 100 constructs a transition pattern data group obtained by changing the set temperature of the wafer chuck for each transition pattern data. Then, the prober 100 includes the most similar part to the partial transition data obtained by arranging the second tip position data of the probe needle 121 in chronological order at every predetermined timing when sequentially testing new semiconductor chips. Transition pattern data is identified from the transition pattern data group, and the relative position is corrected based on the identified transition pattern data.
Accordingly, the prober 100 can accurately and stably bring the probe needle 121 into contact with the semiconductor chip without measuring the temperature.

In the present embodiment, when constructing the transition pattern data group, probe mark data is generated from images including probe marks acquired at predetermined time intervals, and first tip position data is further generated from the probe mark data. However, it is not limited to this. For example, if the main factors that prevent the probe needle from making accurate and stable contact with the electrode pad are expansion or contraction of the probe needle, or bending of the resin substrate that holds the probe needle, an image including the tip of the probe needle The first tip position data may be generated. That is, generating the first tip position data from an image including probe marks includes not only expansion or contraction of each part related to the probe needle, but also factors including expansion or contraction of other parts. will do.

In addition, in the present embodiment, the second tip position data is generated from the image including the tip of the probe needle acquired at each predetermined timing when the semiconductor chips are newly inspected sequentially. is not limited to For example, probe mark data may be generated from an image including probe marks acquired at predetermined timings, and second tip position data may be further generated from the probe mark data.

Furthermore, in this embodiment, the probe position correction program is stored in the ROM, but it may be stored in the HDD, or may not necessarily be stored in the prober from the beginning. The probe position correction program is stored in, for example, another information processing device that is communicably connected to the prober via the Internet, etc., and the prober acquires the probe position correction program from these devices and executes it. You may Also, the probe position correction program may be stored in, for example, a computer-readable recording medium, and the prober may obtain and execute the probe position correction program from this recording medium.

100 prober 110 test head 120 probe card 121 probe needle 130 wafer chuck 140 stage 150 prober control device 151 processor 151a wafer chuck control unit 151b stage control unit 151c image acquisition unit 151d data generation unit 151e data group construction unit 151f pattern identification unit 151g correction Part 152 RAM
153 ROMs
153a Probe position correction program 154 HDD
154a transition pattern DB (transition pattern data group)
155 communication interface 160a camera (first image acquisition device)
160b camera (second image acquisition device)
P electrode pad W semiconductor wafer

Claims (10)

a probe card having probe needles for contacting semiconductor chips formed on the surface of a semiconductor wafer;
a wafer chuck capable of holding the semiconductor wafer and heating or cooling it to a predetermined set temperature;
a first image acquisition device that acquires a first image including the tip of the probe needle;
a second image acquisition device that acquires a second image including the electrode pads of the semiconductor chip;
moving the wafer chuck holding the semiconductor wafer relative to the probe needle based on the relative positions of the tip of the probe needle and the electrode pad obtained from the first image and the second image; a stage for sequentially contacting the probe needles with the electrode pads;
a prober having
generating first tip position data indicating the position of the tip of the probe needle at predetermined time intervals when the semiconductor chips are sequentially inspected, and arranging the generated first tip position data in time series; a data generation unit that further generates transition pattern data by
a data group constructing unit constructing a transition pattern data group obtained by changing the set temperature of the wafer chuck for each transition pattern data;
including a portion most similar to partial transition data obtained by arranging second tip position data indicating the position of the tip of the probe needle at each predetermined timing in chronological order when the semiconductor chips are newly inspected sequentially; a pattern identification unit that identifies the transition pattern data from the transition pattern data group;
a correction unit that corrects the relative position based on the transition pattern data identified by the pattern identification unit;
A prober characterized by having: When constructing the transition pattern data group,
wherein the image acquisition unit acquires the second image further including a probe mark caused by the probe needle contacting the electrode pad at the predetermined time interval, using the second image acquisition device;
2. The prober according to claim 1, wherein said data generator generates probe mark data from said second image further including said probe mark, and further generates said first tip position data from said probe mark data. When constructing the transition pattern data group,
The image acquisition unit acquires the first image including the tip of the probe needle at the predetermined time interval by the first image acquisition device,
2. The prober according to claim 1, wherein said data generator generates said first tip position data from said first image. When newly inspecting the semiconductor chips one by one,
The image acquisition unit acquires the first image including the tip of the probe needle by the first image acquisition device at each predetermined timing,
4. The prober according to claim 1, wherein said data generator generates said first tip position data from said first image. When newly inspecting the semiconductor chips one by one,
The image acquisition unit acquires the second image further including probe traces caused by the probe needle coming into contact with the electrode pad by the second image acquisition device at predetermined timings,
4. Any one of claims 1 to 3, wherein the data generator generates probe mark data from the second image further including the probe mark, and further generates the first tip position data from the probe mark data. Prober as described. 6. The prober according to any one of claims 1 to 5, wherein an angle at which the tip of said probe needle contacts said electrode pad is a predetermined angle with respect to a normal line direction of said electrode pad. 7. The prober according to claim 1, wherein said probe needle is bent. 8. A method of manufacturing a semiconductor device, comprising the step of inspecting using the prober according to any one of claims 1 to 7. a probe card having probe needles for contacting semiconductor chips formed on the surface of a semiconductor wafer;
a wafer chuck capable of holding the semiconductor wafer and heating or cooling it to a predetermined set temperature;
a first image acquisition device that acquires a first image including the tip of the probe needle;
a second image acquisition device that acquires a second image including the electrode pads of the semiconductor chip;
moving the wafer chuck holding the semiconductor wafer relative to the probe needle based on the relative positions of the tip of the probe needle and the electrode pad obtained from the first image and the second image; a stage for sequentially contacting the probe needles with the electrode pads;
A probe position correction method using a prober having
generating first tip position data indicating the position of the tip of the probe needle at predetermined time intervals when the semiconductor chips are sequentially inspected, and arranging the generated first tip position data in time series; to further generate transition pattern data,
constructing a transition pattern data group obtained by changing the set temperature of the wafer chuck for each transition pattern data;
including a portion most similar to partial transition data obtained by arranging second tip position data indicating the position of the tip of the probe needle at each predetermined timing in chronological order when the semiconductor chips are newly inspected sequentially; identifying the transition pattern data from the transition pattern data group;
correcting the relative position based on the transition pattern data identified by the pattern identification unit;
A probe position correction method, comprising: a probe card having probe needles for contacting semiconductor chips formed on the surface of a semiconductor wafer;
a wafer chuck capable of holding the semiconductor wafer and heating or cooling it to a predetermined set temperature;
a first image acquisition device that acquires a first image including the tip of the probe needle;
a second image acquisition device that acquires a second image including the electrode pads of the semiconductor chip;
moving the wafer chuck holding the semiconductor wafer relative to the probe needle based on the relative positions of the tip of the probe needle and the electrode pad obtained from the first image and the second image; a stage for sequentially contacting the probe needles with the electrode pads;
A probe position correction program using a prober having
to the computer,
generating first tip position data indicating the position of the tip of the probe needle at predetermined time intervals when the semiconductor chips are sequentially inspected, and arranging the generated first tip position data in time series; to further generate transition pattern data,
constructing a transition pattern data group obtained by changing the set temperature of the wafer chuck for each transition pattern data;
including a portion most similar to partial transition data obtained by arranging second tip position data indicating the tip position of the probe needle at each predetermined timing when the semiconductor chips are sequentially inspected anew in time series; specifying the transition pattern data from the transition pattern data group;
correcting the relative position based on the transition pattern data identified by the pattern identifying unit;
A probe position correction program characterized by comprising:

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