CN112735967A - Testing method for wafer temperature change test - Google Patents
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- CN112735967A CN112735967A CN202011592602.2A CN202011592602A CN112735967A CN 112735967 A CN112735967 A CN 112735967A CN 202011592602 A CN202011592602 A CN 202011592602A CN 112735967 A CN112735967 A CN 112735967A
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Abstract
The invention provides a test method for wafer temperature change test, which comprises the steps of obtaining a probe amount according to the initial temperature, the preset temperature, the initial probe height and the critical point probe height; enabling the temperature of the bearing disc to reach a first test temperature, adjusting the probe card to a first probe height according to the probe aligning amount, and performing first temperature probe alignment in a non-test area; and under a first test temperature, the probe card performs a first test on the wafer to be tested, and the first test has a first test time. The critical point probe height is obtained through judgment according to the test conditions, the first probe height is controlled on the basis of the critical point probe height, contact test can be carried out after a certain period of time is stabilized under the condition that the probe card and the wafer to be tested are at set temperatures, stable and accurate test data are obtained, and the test efficiency is improved.
Description
Technical Field
The invention relates to the technical field of semiconductor testing, in particular to a testing method for wafer temperature change testing.
Background
In recent years, with continuous progress of integrated circuit technology, circuit structures are more and more complex, integration levels are higher and higher, and in the manufacturing process of semiconductor products, hundreds of process steps are needed to ensure the quality and reliability of used IC products, which is one of the key links for ensuring the performance and quality of integrated circuits. Wafer Acceptance Test (WAT) plays an important role as a chip quality detection process. The purpose of the WAT is to detect whether the wafer product meets the specification requirements of the process by performing a WAT parameter electrical test on a specific test structure on the wafer product. Wafer acceptability testing includes a variety of test items, and is an essential step in chip fabrication as important means for verifying design, monitoring production, ensuring quality, analyzing failures, and guiding applications.
The temperature test model is a test extraction model for wafer acceptability at different temperatures in the process of developing a new technology integrated circuit process, and electrical data such as voltage, current, capacitance and inductance of a diode triode device are tested to judge the electrical characteristics of the new technology device. As shown in fig. 1, which is a schematic view of a testing process of a wafer temperature change test in the prior art, generally, in a testing process, a chuck of a device is heated and cooled, a contact critical point of a probe is found after the temperature is heated and cooled, a distance between a probe tip and a wafer in a cooling or heating process is determined, and then the probe directly tests the wafer under a testing condition. The variation of temperature can cause physical variation to various precise parts of the equipment, including the needle point of the probe card, so that the alignment of the probe and the pressure point generates errors when a product is tested; meanwhile, the wafer and the probe are not cooled or heated for enough time, so that the critical point of cooling and heating cannot be accurately found, test data is abnormal, repeated tests are needed, and the test efficiency is low and the production time is delayed.
Because of the long manufacturing cycle and high cost of integrated circuits, it is important to improve the manufacturing efficiency and quality of the manufacturing process. The significance of the test can provide useful information about the manufacturing process besides judging whether the tested device is qualified, thereby being beneficial to improving the yield, providing information about weak links of a design scheme, being beneficial to monitoring problems in the aspect of design and being responsible for the design quality.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provides a test method for wafer temperature change test.
In order to achieve the purpose, the technical scheme of the invention is as follows:
the invention provides a testing method for wafer temperature change testing, which comprises the following steps:
step S01: loading a wafer to be tested into a bearing disc of a probe station, wherein a probe card is positioned at an initial probe position above the wafer to be tested, the probe card is provided with a probe, the vertical distance between the probe tip of the probe and the wafer to be tested is the initial probe height, and the temperature of the bearing disc is the initial temperature;
step S02: setting the temperature of the bearing disc to a preset temperature, positioning a probe card at an initial probe position above the wafer to be detected, setting the vertical distance between the probe tip of the probe and the wafer to be detected at the preset temperature as the probe height of a critical point, and obtaining the probe amount according to the initial temperature, the preset temperature, the initial probe height and the probe height of the critical point;
step S03: setting the temperature of the bearing disc to a first test temperature, adjusting the probe card to a first probe height according to the probe aligning amount, and moving the probe card to a non-test area of the wafer to be tested to perform first temperature probe alignment;
step S04: at a first test temperature, the probe card moves to a test area of the wafer to be tested to perform a first test on the wafer to be tested, and the first test has a first test time;
step S05: the first test is finished and the probe card is returned to the original probe position.
Preferably, the first test temperature is in the range of-55 ℃ to 125 ℃.
Preferably, the first temperature-probe includes adjusting a probe pressure of the probe card according to a needle mark.
Preferably, the initial probe height is less than or equal to 3 μm.
Preferably, the needle alignment amount is a height compensation amount of the probe card under a temperature variation.
Preferably, the needle alignment amount is equal to a ratio of a difference between the initial probe height and the critical point probe height to a difference between the initial temperature and the preset temperature.
Preferably, the first test time is 1 hour or less.
Preferably, the first test time is greater than 1 hour, and step S04 includes: the probe card tests the test area of the wafer to be tested for N hours, wherein N is an integer greater than or equal to 1, and the probe card moves to a non-test area of the wafer to be tested to perform first temperature probe alignment; and ending the first temperature probe alignment, and returning the probe card to the test area to continue the test until the first test is completed.
Preferably, the wafer to be tested further performs an mth test, where M is an integer greater than or equal to 2, and the method further includes: step S06: setting the temperature of the bearing disc to an Mth testing temperature, adjusting the probe card to the Mth probe height according to the probe aligning amount, and moving the probe card to a non-testing area of the wafer to be tested to perform Mth temperature probe alignment; step S07: and at the Mth test temperature, the probe card moves to the test area of the wafer to be tested to carry out the Mth test on the wafer to be tested, and the Mth test has the Mth test time.
Preferably, the mth temperature needle alignment includes adjusting a needle pressure of the probe card according to a needle mark of the mth temperature needle alignment.
According to the technical scheme, the invention provides the test method for the wafer temperature change test, and the probe amount is obtained according to the initial temperature, the preset temperature, the initial probe height and the critical point probe height; enabling the temperature of the bearing disc to reach a first test temperature, adjusting the probe card to a first probe height according to the probe aligning amount, and performing first temperature probe alignment in a non-test area; and under a first test temperature, the probe card performs a first test on the wafer to be tested, and the first test has a first test time. The critical point probe height is obtained through judgment according to the test conditions, the first probe height is controlled on the basis of the critical point probe height, contact test can be carried out after a certain period of time is stabilized under the condition that the probe card and the wafer to be tested are at the set temperature, stable and accurate test data are obtained, and the test efficiency is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic diagram illustrating a wafer temperature variation test in the prior art
FIG. 2 is a schematic flow chart illustrating a testing method for wafer temperature swing testing according to an embodiment of the invention
FIG. 3 is a schematic diagram illustrating critical point probe heights for wafer temperature swing test according to an embodiment of the invention
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention are described in detail below with reference to the accompanying drawings.
Fig. 2 is a schematic flowchart illustrating a testing method of a wafer temperature swing test according to an embodiment of the present invention, and fig. 3 is a schematic diagram illustrating a critical point probe height of the wafer temperature swing test according to an embodiment of the present invention. The invention is of course not limited to this particular embodiment, and general alternatives known to those skilled in the art are also covered by the scope of the invention.
Referring to fig. 2, fig. 2 shows 5 steps in total, and as shown in fig. 2, the flow of the testing method for wafer temperature variation test provided by the present invention includes the following steps:
step S01: the wafer to be tested is loaded into a bearing plate of a probe station, a probe card is positioned at an initial probe position above the wafer to be tested, the probe card is provided with a probe, the vertical distance between the probe tip of the probe and the wafer to be tested is the initial probe height, and the temperature of the bearing plate is the initial temperature.
In this embodiment, a probe test machine is used to test a wafer to be tested, the probe test machine includes a tester and a probe station, the probe station loads the wafer to be tested through a carrier disk (chuck) and also loads a probe card, the probe card has a probe, and under normal test, a vertical distance between a probe tip of the probe and the wafer to be tested is kept unchanged to ensure that the probe and the wafer to be tested are stably contacted under constant needle pressure. The probe for testing is positioned above the wafer to be tested, and the vertical distance between the probe tip of the probe and the wafer to be tested is the initial probe height; the probe test machine is in contact with a test contact pad on a wafer to be tested through a probe point of the probe, the probe test machine sends test electric signals (including signals such as voltage, current and the like), crystal grains on the wafer to be tested are in contact through the probe point of the probe, test data are obtained, the electric signals are fed back to the test machine, parameter test on the wafer to be tested is achieved, and therefore the electrical performance of the wafer to be tested is judged. In this embodiment, the probe card is located at an initial probe position, a distance between the probe card and the wafer to be tested is the initial probe height, and the initial probe height is less than or equal to 3 μm.
Step S02: setting the temperature of the bearing disc to a preset temperature, positioning a probe card at an initial probe position above the wafer to be detected, setting the vertical distance between the probe tip of the probe and the wafer to be detected at the preset temperature as the probe height of a critical point, and obtaining the probe amount according to the initial temperature, the preset temperature, the initial probe height and the probe height of the critical point.
The probe card comprises a probe card body, a probe card, a bearing plate, a probe card and a probe card, wherein the probe card body is provided with a probe, the bearing plate is provided with a probe tip, the probe tip is arranged above a wafer to be tested, the probe tip is arranged above the wafer to be tested, the probe card body is provided with a probe tip, the probe tip is arranged above the wafer to be tested, the probe card body is arranged above the bearing plate, the probe tip is arranged above the wafer to be tested, the probe card body is arranged above. And obtaining a needle alignment amount according to the initial temperature, the preset temperature, the initial probe height and the critical point probe height, wherein the needle alignment amount is equal to the ratio of the difference between the initial probe height and the critical point probe height to the difference between the initial temperature and the preset temperature. The height variable and the temperature variable of the probe card are in a linear relation, so that the first probe height of the probe card is obtained according to the subsequently set first test temperature, the test accuracy is improved, and the test steps are simplified.
After preheating, the precision of each part of the probe station can deviate from the normal temperature, the probe test machine station performs data re-acquisition on each part of the probe station through system calibration and updates calibration data, and in the process, the probe test machine station collects parameters of probe station hardware such as slide holder surface parameters and microscope high and low power lenses through methods such as height measurement, alignment part measurement and the like, so that a necessary basis is accurately provided for subsequent needle mark control.
Fig. 3 is a schematic diagram illustrating critical point probe heights for wafer temperature swing testing according to an embodiment of the invention. As shown in fig. 3, the carrier tray is preheated, and for the subsequent preparation work before the temperature-changing test, the preheating is only required to be set once, and the probe tester is not powered off or idle, and the preheating process does not need to be repeated again.
In this embodiment, the temperature of the carrier plate is set to a preset temperature, the probe card is located at an initial probe position above the wafer to be tested, and the height of the initial probe is less than or equal to 3 μm. After preheating, the needle point of the probe card is heated and expanded, and the relative vertical distance between the needle point of the probe and the wafer to be tested can be kept unchanged by adjusting the height of the probe card, so that the needle amount is obtained by combining the initial probe height and the critical point probe height according to the temperature difference before and after preheating, and a data basis is provided for the subsequent temperature change test.
Step S03: setting the temperature of the bearing disc to a first test temperature, adjusting the probe card to a first probe height according to the probe aligning amount, and moving the probe card to a non-test area of the wafer to be tested to perform first temperature probe alignment.
When the test items have temperature requirements, the probe test machine platform heats the wafer to be tested through the bearing disc, so that the wafer to be tested can reach the corresponding temperature requirements. In this embodiment, the temperature range of the first testing temperature is-55 ℃ to 125 ℃. In order to enable the wafer to be tested to reach the first testing temperature, the temperature of the wafer to be tested is adjusted on the bearing plate through the bearing plate. In the process of reaching the first test temperature, the wafer to be tested expands with heat and contracts with cold along with the change of the temperature of the bearing plate, so that the thickness of the wafer to be tested changes, and therefore the wafer to be tested needs to be placed on the bearing plate for a period of time to be fully heated or cooled, so as to reach a stable state.
The first temperature probe pair is used for verifying the probe state of the probe card at a first test temperature. In this embodiment, the first temperature aligning includes adjusting a needle pressure of the probe card according to a needle mark. In the process from the preset temperature to the first test temperature, physical changes can be generated on various precise parts of the probe test machine table, including the probes, due to the temperature changes. When testing the wafer that awaits measuring like this, the counterpoint of probe and pressure point produces the error, first temperature is to the needle promptly through the microscope measurement of probe test board whether the degree of depth between a plurality of indentures is unanimous on the wafer that awaits measuring, the degree of depth between the indenture is inconsistent, explains the needle point of probe with the perpendicular distance of the wafer that awaits measuring is unstable, promptly the probe still in deformation, then need wait for the deformation of probe is stable, promptly the needle point with the perpendicular distance of the wafer that awaits measuring is stable, in order to guarantee the needle trace of probe is stable, avoids damaging the wafer that awaits measuring or test result inaccurate.
Step S04: and at a first test temperature, the probe card moves to the test area of the wafer to be tested to perform a first test on the wafer to be tested, and the first test has a first test time.
The first test has a first test time and a first test temperature, the first test time is less than or equal to 1 hour, and the probe card performs the first test on the wafer to be tested at the first test temperature until the test of the point to be tested of the wafer to be tested is completed.
In this embodiment, when the point to be tested of the wafer to be tested cannot be tested within 1 hour, and the first testing time is longer than 1 hour, step S04 includes: the probe card tests the test area of the wafer to be tested for N hours, wherein N is an integer greater than or equal to 1, and the probe card moves to a non-test area of the wafer to be tested to perform first temperature probe alignment; and ending the first temperature probe alignment, and returning the probe card to the test area to continue the test until the first test is completed. In a long-time temperature environment, errors can be generated in the alignment between the probe card and the pressure point, so that after 1 hour of testing is finished, the probe card performs first temperature probe alignment in a non-testing area, and the height and the needle pressure of the probe card are corrected.
In another embodiment, the wafer to be tested further performs an mth test, where M is an integer greater than or equal to 2, and the method further includes: step S06: setting the temperature of the bearing disc to an Mth testing temperature, adjusting the probe card to the Mth probe height according to the probe aligning amount, and moving the probe card to a non-testing area of the wafer to be tested to perform Mth temperature probe alignment; step S07: and at the Mth test temperature, the probe card moves to the test area of the wafer to be tested to carry out the Mth test on the wafer to be tested. The temperature range of the Mth testing temperature is-55-125 ℃. And the testing time of the Mth test is less than or equal to 1 hour, and the probe card performs the Mth test on the wafer to be tested at the Mth testing temperature until the point to be tested of the wafer to be tested is tested. The testing time of the mth test is greater than 1 hour, and step S07 further includes: the probe card performs the Mth test on the wafer to be tested within 1 hour; the probe card moves to a non-test area of the wafer to be tested to perform Mth temperature probe alignment, the Mth temperature probe alignment comprises adjusting the probe pressure of the probe card according to the probe trace of the Mth temperature probe alignment to ensure the test stability of the probe card in a long-time test, then the probe card continues to perform the Mth test on the wafer to be tested until the Mth test is completed, the Mth temperature probe alignment step of the Mth test with the test time longer than 1 hour is the same as the first temperature probe alignment step of the first test time longer than 1 hour, and details are not repeated here.
Step S05: the first test is finished and the probe card is returned to the original probe position.
In the prior art, a probe card used for testing passively reaches a testing temperature point through contact with a wafer, which needs a test engineer to judge according to experience, and the operation is time-consuming and labor-consuming and has high randomness, thereby affecting the reliability and stability of test data. The test data according to the present invention shows that the test accuracy of the prior art is 60% at a test time of 5 hours, and that at least three times the time is required to retest the failed test points. The testing method of the invention ensures that the probe of the probe station keeps consistent needle pressure under the condition of expansion with heat and contraction with cold, the testing accuracy is 100% under the condition of 5 hours of testing time, and repeated testing is not needed.
According to the testing method of the wafer variable temperature test, the probe amount is obtained according to the initial temperature, the preset temperature, the initial probe height and the critical point probe height; enabling the temperature of the bearing disc to reach a first test temperature, adjusting the probe card to a first probe height according to the probe aligning amount, and performing first temperature probe alignment in a non-test area; and under a first test temperature, the probe card performs a first test on the wafer to be tested, and the first test has a first test time. The critical point probe height is obtained through judgment according to the test conditions, the first probe height is controlled on the basis of the critical point probe height, contact test can be carried out after a certain period of time is stabilized under the condition that the probe card and the wafer to be tested are at the set temperature, stable and accurate test data are obtained, and the test efficiency is improved.
The above description is only for the preferred embodiment of the present invention, and the embodiment is not intended to limit the scope of the present invention, so that all the equivalent structural changes made by using the contents of the description and the drawings of the present invention should be included in the scope of the present invention.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A test method for wafer temperature change test is characterized by comprising the following steps:
step S01: loading a wafer to be tested into a bearing disc of a probe station, wherein a probe card is positioned at an initial probe position above the wafer to be tested, the probe card is provided with a probe, the vertical distance between the probe tip of the probe and the wafer to be tested is the initial probe height, and the temperature of the bearing disc is the initial temperature;
step S02: setting the temperature of the bearing disc to a preset temperature, positioning a probe card at an initial probe position above the wafer to be detected, setting the vertical distance between the probe tip of the probe and the wafer to be detected at the preset temperature as the probe height of a critical point, and obtaining the probe amount according to the initial temperature, the preset temperature, the initial probe height and the probe height of the critical point;
step S03: setting the temperature of the bearing disc to a first test temperature, adjusting the probe card to a first probe height according to the probe aligning amount, and moving the probe card to a non-test area of the wafer to be tested to perform first temperature probe alignment;
step S04: at a first test temperature, the probe card moves to a test area of the wafer to be tested to perform a first test on the wafer to be tested, and the first test has a first test time;
step S05: the first test is finished and the probe card is returned to the original probe position.
2. The test method of claim 1, wherein the first test temperature is in a temperature range of-55 ℃ to 125 ℃.
3. The test method of claim 1, wherein the first temperature event comprises adjusting a pin pressure of the probe based on a pin mark.
4. The test method of claim 1, wherein the initial probe height is less than or equal to 3 μ ι η.
5. The method of testing of claim 1, wherein the probe amount is a height compensation amount of the probe card under temperature variation.
6. The testing method of claim 5, wherein the probe count is equal to a ratio of a difference between the initial probe height and the critical point probe height to a difference between the initial temperature and the predetermined temperature.
7. The test method of claim 1, wherein the first test time is less than or equal to 1 hour.
8. The testing method of claim 1, wherein the first testing time is greater than 1 hour, and step S04 includes: the probe card tests the test area of the wafer to be tested for N hours, wherein N is an integer greater than or equal to 1, and the probe card moves to a non-test area of the wafer to be tested to perform first temperature probe alignment; and ending the first temperature probe alignment, and returning the probe card to the test area to continue the test until the first test is completed.
9. The method as claimed in claim 1, wherein the wafer to be tested further performs an mth test, M being an integer greater than or equal to 2, further comprising: step S06: setting the temperature of the bearing disc to an Mth testing temperature, adjusting the probe card to the Mth probe height according to the probe aligning amount, and moving the probe card to a non-testing area of the wafer to be tested to perform Mth temperature probe alignment; step S07: and at the Mth test temperature, the probe card moves to the test area of the wafer to be tested to carry out the Mth test on the wafer to be tested, and the Mth test has the Mth test time.
10. The method of testing of claim 9, wherein the mth temperature needle pair comprises adjusting a needle pressure of the probe card according to a needle mark of the mth temperature needle pair.
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Cited By (4)
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| CN115308457A (en) * | 2022-06-30 | 2022-11-08 | 上海泽丰半导体科技有限公司 | Probe card manufacturing method for high and low temperature test and probe card |
| CN115825706A (en) * | 2023-02-24 | 2023-03-21 | 长春光华微电子设备工程中心有限公司 | Control method for probe temperature |
| CN117425953A (en) * | 2021-06-04 | 2024-01-19 | 株式会社东京精密 | Detector control device, detector control method and detector |
| TWI834227B (en) * | 2022-07-25 | 2024-03-01 | 欣銓科技股份有限公司 | Probe preheating method for wafer-level probe card |
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| US20090002011A1 (en) * | 2007-06-29 | 2009-01-01 | Tokyo Electron Limited | Inspecting method and storage medium for storing program of the method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117425953A (en) * | 2021-06-04 | 2024-01-19 | 株式会社东京精密 | Detector control device, detector control method and detector |
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