JP2018123369A - Plasma cvd device and film deposition method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce costs in a plasma CVD device for applying film deposition treatment to inner faces of plural containers.SOLUTION: In one embodiment of the present invention, a plasma CVD device comprises: a high frequency power source 31 with a predetermined frequency; a switcher 22 electrically connected to the high frequency power source; a first stationary matching unit 23a and a second matching unit 23b; a first electrode 3 and a second electrode 33; a first container arranged inside the first electrode; a second container arranged inside the second electrode; a gas supply mechanism for supplying raw material gas; and a vacuum evacuation mechanism for executing vacuum evacuation. The high frequency power source has a first function for varying the predetermined frequency in a range of ±10% or more, and a second function for changing the frequency using the first function to reduce a reaction wave from the first electrode or the second electrode, or a phase difference between a voltage and a current output from the high frequency power source.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a plasma CVD apparatus and a film forming method.

  A plastic container made of polyethylene terephthalate resin (PET) or the like is inferior in gas barrier property to a can. Therefore, a method for improving the gas barrier property in a plastic container by coating a DLC (Diamond Like Carbon) film, which is a hard carbon film, on the inner surface of the plastic container is known. An external electrode is placed on the outside of the plastic container, an internal electrode that also serves as a source gas introduction pipe is placed on the inside of the plastic container, and an automatic aligner is installed from the high-frequency power source while acetylene gas is supplied as the source gas in the container. A high frequency voltage is applied to the external electrode. Thereby, the source gas is turned into plasma, and a DLC film is formed on the inner surface of the plastic container (see, for example, Patent Document 1).

  In the above-described plasma CVD apparatus for forming a DLC film on the inner surface of a plastic container, a DLC film is formed on the inner surface of one plastic container using one automatic aligner for one external electrode. For this reason, when forming a DLC film on a plurality of plastic containers at the same time, as many automatic containers as the number of plastic containers are required. Since the automatic matching unit is expensive, it has been a factor of increasing the device cost. The automatic aligner is arranged in a state of being substantially adjacent to the external electrode, and the external electrode and the automatic aligner are electrically connected by a copper plate.

Japanese Patent No. 2788412

  An object of one embodiment of the present invention is to reduce the cost of a plasma CVD apparatus that performs film formation on the inner surfaces of a plurality of containers.

Hereinafter, various aspects of the present invention will be described.
[1] A high-frequency power source having a predetermined frequency;
A fixed matching unit electrically connected to the high-frequency power source;
An electrode electrically connected to the fixed matcher;
A container disposed inside the electrode;
A gas supply mechanism for supplying a source gas into the container;
An evacuation mechanism for evacuating the container;
Comprising
The high frequency power supply reduces a first function of changing the predetermined frequency within a range of ± 10% or less, a reflected wave from the electrode, or a phase difference between a voltage and a current output from the high frequency power supply. Furthermore, the plasma CVD apparatus has a second function of changing the frequency by using the first function.

[2] A high-frequency power source having a predetermined frequency;
A fixed matching unit electrically connected to the high-frequency power source;
An electrode electrically connected to the fixed matcher;
A container disposed on the electrode;
A gas supply mechanism for supplying a source gas to the outside of the container;
An evacuation mechanism for evacuating the outside of the container;
Comprising
The high frequency power supply reduces a first function of changing the predetermined frequency within a range of ± 10% or less, a reflected wave from the electrode, or a phase difference between a voltage and a current output from the high frequency power supply. Furthermore, the plasma CVD apparatus has a second function of changing the frequency by using the first function.

[3] In the above [1] or [2],
The plasma CVD apparatus, wherein a distance between the fixed matching unit and the electrode is 20 cm or less.

[4] In the above [1] or [2],
The plasma CVD apparatus, wherein the fixed matching unit and the electrode are integrally formed.

[5] a high-frequency power source having a predetermined frequency;
A switch electrically connected to the high-frequency power source;
A first fixed matcher and a second fixed matcher electrically connected to the switch;
A first electrode electrically connected to the first fixed matcher;
A second electrode electrically connected to the second fixed matcher;
A first container disposed inside the first electrode;
A second container disposed inside the second electrode;
A gas supply mechanism for supplying a source gas into the first container and the second container;
An evacuation mechanism for evacuating the inside of the first container and the inside of the second container;
Comprising
The switch includes a first path that electrically connects the high-frequency power source and the first fixed matching device, and a second path that electrically connects the high-frequency power source and the second fixed matching device. Has a route,
The high-frequency power source has a first function for changing the predetermined frequency within a range of ± 10% or less, a reflected wave from the first electrode or the second electrode, or a voltage output from the high-frequency power source. A plasma CVD apparatus having a second function of changing the frequency using the first function so as to reduce a phase difference between current and current.

[6] A high-frequency power source having a predetermined frequency;
A switch electrically connected to the high-frequency power source;
A first fixed matcher and a second fixed matcher electrically connected to the switch;
A first electrode electrically connected to the first fixed matcher;
A second electrode electrically connected to the second fixed matcher;
A first container disposed on the first electrode;
A second container disposed on the second electrode;
A gas supply mechanism for supplying a source gas to the outside of the first container and the outside of the second container;
An evacuation mechanism for evacuating the outside of the first container and the outside of the second container;
Comprising
The switch includes a first path that electrically connects the high-frequency power source and the first fixed matching device, and a second path that electrically connects the high-frequency power source and the second fixed matching device. Has a route,
The high-frequency power source has a first function for changing the predetermined frequency within a range of ± 10% or less, a reflected wave from the first electrode or the second electrode, or a voltage output from the high-frequency power source. A plasma CVD apparatus having a second function of changing the frequency using the first function so as to reduce a phase difference between current and current.

[7] In the above [5] or [6],
The distance between the first fixed matching device and the first electrode is 20 cm or less, and the distance between the second fixed matching device and the second electrode is 20 cm or less. Plasma CVD apparatus.

[8] In the above [5] or [6],
The first fixed matching device and the first electrode are integrally formed, and the second fixed matching device and the second electrode are formed integrally. apparatus.

[9] In any one of [5] to [8] above,
The plasma CVD apparatus characterized in that a distance of 0.5 m or more is provided between the switcher and the first fixed matcher and between the switcher and the second fixed matcher.
Note that the distance between the switch and the first fixed matcher and the distance between the switch and the second fixed matcher may be 3 m or more, or 5 m or more. .

[10] In any one of [5] to [9] above,
The switch and the first fixed matcher are electrically connected by a first cable, and the switch and the second fixed matcher are electrically connected by a second cable. Plasma CVD apparatus.

[11] In the above [5],
A third fixed matcher electrically connected to the switch;
A third electrode electrically connected to the third fixed matcher;
A third container disposed inside the third electrode;
Have
The switch has a third path for electrically connecting the high-frequency power source and the third fixed matcher,
The gas supply mechanism can supply a source gas into the third container,
The plasma CVD apparatus, wherein the evacuation mechanism can evacuate the inside of the third container.

[12] In the above [6],
A third fixed matcher electrically connected to the switch;
A third electrode electrically connected to the third fixed matcher;
A third container disposed on the third electrode;
Have
The switch has a third path for electrically connecting the high-frequency power source and the third fixed matcher,
The gas supply mechanism can supply a source gas to the outside of the third container,
The plasma CVD apparatus, wherein the vacuum exhaust mechanism can exhaust the outside of the third container.

[13] A high-frequency power source having a predetermined frequency;
A fixed matching unit electrically connected to the high-frequency power source;
A switch electrically connected to the fixed matcher;
A first electrode and a second electrode electrically connected to the switch;
A first container disposed inside the first electrode;
A second container disposed inside the second electrode;
A gas supply mechanism for supplying a source gas into the first container and the second container;
An evacuation mechanism for evacuating the inside of the first container and the inside of the second container;
Comprising
The switch includes: a first path that electrically connects the fixed matcher and the first electrode; and a second path that electrically connects the fixed matcher and the second electrode. Have
The high-frequency power source has a first function for changing the predetermined frequency within a range of ± 10% or less, a reflected wave from the first electrode or the second electrode, or a voltage output from the high-frequency power source. And a second function of changing the frequency using the first function so as to reduce the phase difference between the current and the current.

[14] a high-frequency power source having a predetermined frequency;
A fixed matching unit electrically connected to the high-frequency power source;
A switch electrically connected to the fixed matcher;
A first electrode and a second electrode electrically connected to the switch;
A first container disposed on the first electrode;
A second container disposed on the second electrode;
A gas supply mechanism for supplying a source gas to the outside of the first container and the outside of the second container;
An evacuation mechanism for evacuating the outside of the first container and the outside of the second container;
Comprising
The switch includes: a first path that electrically connects the fixed matcher and the first electrode; and a second path that electrically connects the fixed matcher and the second electrode. Have
The high-frequency power source has a first function for changing the predetermined frequency within a range of ± 10% or less, a reflected wave from the first electrode or the second electrode, or a voltage output from the high-frequency power source. And a second function of changing the frequency using the first function so as to reduce the phase difference between the current and the current.

[15] In the above [13] or [14],
The plasma CVD apparatus, wherein the distance between the switch and the first electrode and the distance between the switch and the second electrode are 0.5 m or more.
Note that the distance between the switch and the first external electrode and the distance between the switch and the second external electrode may be 3 m or more, or 5 m or more.

[16] In any one of [13] to [15] above,
The plasma CVD, wherein the switch and the first electrode are electrically connected by a first cable, and the switch and the second electrode are electrically connected by a second cable. apparatus.

[17] In any one of [13] to [16] above,
The plasma CVD apparatus, wherein the fixed matching unit and the switching unit are integrally formed.

[18] In the above [13],
A third electrode electrically connected to the switch;
A third container disposed inside the third electrode;
Have
The switch has a third path for electrically connecting the fixed matching unit and the third electrode,
The gas supply mechanism can supply a source gas into the third container,
The plasma CVD apparatus, wherein the evacuation mechanism can evacuate the inside of the third container.

[19] In the above [14],
A third electrode electrically connected to the switch;
A third container disposed on the third electrode;
Have
The switch has a third path for electrically connecting the fixed matching unit and the third electrode,
The gas supply mechanism can supply a source gas to the outside of the third container,
The plasma CVD apparatus, wherein the vacuum exhaust mechanism can exhaust the outside of the third container.

[20] In any one of [1] to [19] above,
The plasma CVD apparatus, wherein the predetermined frequency is 10 kHz or more and 27.12 MHz or less (preferably 1 MHz or more and 13.56 MHz or less, more preferably 3 MHz or more and 9 MHz or less, and further preferably 5 MHz or more and 7 MHz or less).

[21] Step (a) of evacuating the inside of the container;
Supplying a source gas into the container (b);
A high frequency output of a predetermined frequency is supplied from a high frequency power source to the electrode through a fixed matching device, and a plasma of the source gas is generated in the container disposed inside the electrode, thereby forming a film in the container. A step (c) of forming a film;
Comprising
The high frequency power source has a function of varying the predetermined frequency within a range of ± 10% or less,
In the step (c), the function is used to change the frequency so as to reduce a reflected wave from the electrode or a phase difference between a voltage and a current output from the high-frequency power source. A film forming method, comprising a step of supplying a high-frequency output to the switch.

[22] A step (a) of evacuating the outside of the container;
Supplying a source gas to the outside of the container (b);
A high frequency output of a predetermined frequency is supplied from a high frequency power source to an electrode through a fixed matching unit, and a plasma of the source gas is generated outside the container disposed on the electrode, thereby forming a film on the outer surface of the container A step (c) of forming a film;
Comprising
The high frequency power source has a function of varying the predetermined frequency within a range of ± 10% or less,
In the step (c), the function is used to change the frequency so as to reduce a reflected wave from the electrode or a phase difference between a voltage and a current output from the high-frequency power source. A film forming method, comprising a step of supplying a high-frequency output to the switch.

[23] A step (a) of evacuating the inside of the first container;
A step (b) of evacuating the inside of the second container;
Supplying a first source gas into the first container (c);
Supplying a second source gas into the second container (d);
A high-frequency output of a predetermined frequency is supplied from a high-frequency power source to the switch, and the high-frequency output from the switch is supplied to the first electrode via the first fixed matching unit, and is arranged inside the first electrode. (E) forming a film in the first container by generating plasma of the first source gas in the first container;
After the step (e), the high-frequency output is supplied from the high-frequency power source to the switch, the high-frequency output is supplied from the switch to a second electrode through a second fixed matching unit, and the first A step (f) of forming a film in the second container by generating a plasma of the second source gas in the second container disposed inside the second electrode;
Comprising
The switch includes a first path that electrically connects the high-frequency power source and the first fixed matching device, and a second path that electrically connects the high-frequency power source and the second fixed matching device. Have a route,
The high frequency power source has a function of varying the predetermined frequency within a range of ± 10% or less,
In the step (e), the high-frequency power source is changed while changing the frequency using the function so as to reduce a reflected wave from the first electrode or a phase difference between a voltage and a current output from the high-frequency power source. Supplying the high-frequency output to the switch,
In the step (f), the high frequency is changed while changing the frequency using the function so as to reduce a reflected wave from the second electrode or a phase difference between a voltage and a current output from the high frequency power source. A film forming method comprising the step of supplying the high frequency output from a power source to the switch.

[24] Step (a) of evacuating the outside of the first container;
Evacuating the outside of the second container (b);
Supplying a first source gas to the outer surface of the first container (c);
Supplying a second source gas to the outer surface of the second container (d);
A high-frequency output of a predetermined frequency is supplied from a high-frequency power source to a switch, and a high-frequency output from the switch is supplied to a first electrode through a first fixed matching unit, and the first electrode is disposed on the first electrode. (E) forming a film on the outer surface of the first container by generating plasma of the first source gas on the outside of the first container;
After the step (e), the high-frequency output is supplied from the high-frequency power source to the switch, the high-frequency output is supplied from the switch to a second electrode through a second fixed matching unit, and the first A step (f) of forming a film on the outer surface of the second container by generating plasma of the second source gas outside the second container disposed on the second electrode;
Comprising
The switch includes a first path that electrically connects the high-frequency power source and the first fixed matching device, and a second path that electrically connects the high-frequency power source and the second fixed matching device. Have a route,
The high frequency power source has a function of varying the predetermined frequency within a range of ± 10% or less,
In the step (e), the high-frequency power source is changed while changing the frequency using the function so as to reduce a reflected wave from the first electrode or a phase difference between a voltage and a current output from the high-frequency power source. Supplying the high-frequency output to the switch,
In the step (f), the high frequency is changed while changing the frequency using the function so as to reduce a reflected wave from the second electrode or a phase difference between a voltage and a current output from the high frequency power source. A film forming method comprising the step of supplying the high frequency output from a power source to the switch.

[25] A step (a) of evacuating the inside of the first container;
A step (b) of evacuating the inside of the second container;
Supplying a first source gas into the first container (c);
Supplying a second source gas into the second container (d);
A high-frequency output of a predetermined frequency is supplied from a high-frequency power source to a fixed matching device, and the high-frequency output is supplied from the fixed matching device to a first electrode via a switch, and is arranged inside the first electrode. Forming a film in the first container by generating plasma of the first source gas in the first container (e);
After the step (e), the high-frequency output is supplied from the high-frequency power source to the fixed matching unit, the high-frequency output is supplied from the fixed matching unit to the second electrode through the switch, and the second (F) forming a film in the second container by generating a plasma of the second source gas in the second container disposed inside the electrode;
Comprising
The switch includes: a first path that electrically connects the fixed matcher and the first electrode; and a second path that electrically connects the fixed matcher and the second electrode. Have
The high frequency power source has a function of varying the predetermined frequency within a range of ± 10% or less,
The step (e) includes changing the frequency using the function so as to reduce a reflected wave from the first electrode or a phase difference between a voltage and a current output from the high-frequency power source. Supplying the high-frequency output from a power source to the fixed matching unit;
In the step (f), the high frequency is changed while changing the frequency using the function so as to reduce a reflected wave from the second electrode or a phase difference between a voltage and a current output from the high frequency power source. A film forming method comprising the step of supplying the high frequency output from a power source to the fixed matching unit.

[26] Step (a) of evacuating the outside of the first container;
Evacuating the outside of the second container (b);
Supplying a first source gas to the outer surface of the first container (c);
Supplying a second source gas to the outer surface of the second container (d);
A high-frequency output of a predetermined frequency is supplied from a high-frequency power source to a fixed matching unit, the high-frequency output is supplied from the fixed matching unit to a first electrode via a switch, and the first electrode disposed on the first electrode (E) forming a film on the outer surface of the first container by generating plasma of the first source gas on the outside of the container;
After the step (e), the high-frequency output is supplied from the high-frequency power source to the fixed matching unit, the high-frequency output is supplied from the fixed matching unit to the second electrode through the switch, and the second A step (f) of forming a film on the outer surface of the second container by generating plasma of the second source gas on the outside of the second container disposed on the electrode;
Comprising
The switch includes: a first path that electrically connects the fixed matcher and the first electrode; and a second path that electrically connects the fixed matcher and the second electrode. Have
The high frequency power source has a function of varying the predetermined frequency within a range of ± 10% or less,
The step (e) includes changing the frequency using the function so as to reduce a reflected wave from the first electrode or a phase difference between a voltage and a current output from the high-frequency power source. Supplying the high-frequency output from a power source to the fixed matching unit;
In the step (f), the high frequency is changed while changing the frequency using the function so as to reduce a reflected wave from the second electrode or a phase difference between a voltage and a current output from the high frequency power source. A film forming method comprising the step of supplying the high frequency output from a power source to the fixed matching unit.

The first source gas and the second source gas may be the same gas.
Moreover, the said process (a) and the said process (b) may be performed simultaneously, and the said process (c) and the said process (d) may be performed simultaneously.

  According to one embodiment of the present invention, the cost of a plasma CVD apparatus that performs film formation on the inner surfaces of a plurality of containers can be reduced.

It is sectional drawing which shows typically the plasma CVD apparatus which concerns on 1 aspect of this invention. It is sectional drawing which shows typically the plasma CVD apparatus which concerns on 1 aspect of this invention. It is sectional drawing which shows the 1st external electrode 3 shown in FIG.1 and FIG.2 and its periphery in detail. It is sectional drawing which shows typically the plasma CVD apparatus which concerns on 1 aspect of this invention. It is sectional drawing which shows typically the plasma CVD apparatus which concerns on 1 aspect of this invention. It is sectional drawing which shows the 1st external electrode 3 shown in FIG.4 and FIG.5 and its periphery in detail. It is a block diagram which shows typically the plasma CVD apparatus which concerns on 1 aspect of this invention. FIG. 8 is a partially exploded perspective view of the first upper electrode of the plasma CVD apparatus shown in FIG. 7. It is a block diagram which shows typically the plasma CVD apparatus which concerns on 1 aspect of this invention.

  Hereinafter, embodiments and examples of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments and examples below.

[First Embodiment]
1, 2, and 3 are cross-sectional views schematically illustrating a plasma CVD apparatus according to one embodiment of the present invention.

  As shown in FIG. 1, the plasma CVD apparatus has an RF power source (high frequency power source) 31, and the frequency of the RF power source 31 is 6 MHz. In the present embodiment, the RF power supply 31 having a frequency of 6 MHz is used. However, the present invention is not limited to this, and is 10 kHz or more and 27.12 MHz or less (preferably 1 MHz or more and 13.56 MHz or less, more preferably 3 MHz or more. It is also possible to use an RF power source having a frequency of 9 MHz or less, more preferably 5 MHz to 7 MHz.

  The RF power source 31 is electrically connected to the switch 22. The switch 22 is electrically connected to the first fixed matcher 23a, the second fixed matcher 23b, and the third fixed matcher 23c. Specifically, the switch 22 and the first fixed matcher 22a may be electrically connected by the first coaxial cable 35, and the switch 22 and the second fixed matcher 22b are the second. The switch 22 and the third fixed matching unit 22c may be electrically connected by a third coaxial cable 37. The reason why the first to third coaxial cables 35 to 37 are connected as described above is that the switch 22 and the first to third fixed matching units 22a, 22b, and 22c of the plasma CVD apparatus shown in FIG. This is because the positional relationship is as shown.

  The first fixed matching unit 23a is electrically connected to a first external electrode (also referred to as a first electrode) 3, and the second fixed matching unit 23b is connected to a second external electrode (also referred to as a second electrode). It is electrically connected to 33). The third fixed matching unit 23 c is electrically connected to a third external electrode (also referred to as a third electrode) 34. The distance between the first fixed matching unit 23a and the first external electrode 3 may be 20 cm or less, and the first fixed matching unit 23a and the first external electrode 3 are integrally formed. Good. The distance between the second fixed matching unit 23b and the second external electrode 33 is preferably 20 cm or less, and the second fixed matching unit 23b and the second external electrode 33 are integrally formed. Good. The distance between the third fixed matching unit 23c and the third external electrode 34 may be 20 cm or less, and the third fixed matching unit 23c and the third external electrode 34 are integrally formed. Good.

  The first external electrode 3 and the first fixed matching unit 23a may be electrically connected by the first copper plate 32a, but the first external electrode 3 and the first fixed matching unit 23a May be electrically connected by a cable other than a coaxial cable or a coaxial cable (see FIG. 2). The second external electrode 33 and the second fixed matcher 23b may be electrically connected by the second copper plate 32b, but the second external electrode 33 and the second fixed matcher 23b are coaxial. You may electrically connect by cables other than a cable or a coaxial cable (refer FIG. 2). The third external electrode 34 and the third fixed matching unit 23c may be electrically connected by a third copper plate 32c, but the third external electrode 34 and the third fixed matching unit 23c are coaxial. You may electrically connect by cables other than a cable or a coaxial cable (refer FIG. 2). The sizes of the first to third copper plates 32a, 32b, and 32c are, for example, a width of 30 mm and a thickness of 2 mm. By using such a copper plate, between the first external electrode 3 and the first fixed matching unit 23a, between the second external electrode 33 and the second fixed matching unit 23b, the third external electrode. The respective resistances between 34 and the third fixed matcher 23c can be reduced. In particular, since most of the high-frequency current flows on the surface of the copper plate, the resistance can be made lower than that of wiring such as a cable or a coaxial cable.

  As shown in FIG. 2, the first to third outer electrodes 3, 33, 34 are arranged on the circumference, and are substantially adjacent to the first to third outer electrodes 3, 33, 34, respectively. 3 fixed matching devices 23a, 23b, and 23c are arranged, and a switch 22 is arranged inside the circle. For this reason, the distance between the switching device 22 and each of the first to third fixed matching devices 23a, 23b, and 23c is about the radius of a circle even if it is short. In addition, it is not always possible to arrange the switch 22 on the plane including the circle, and when the switch 22 is arranged above the plane, the switch 22 and the first to third fixed matching units 23a, The distance to each of 23b and 23c is longer than the radius of the circle. Therefore, if the radius of the circle is 1.5 m, for example, at least one of the first to third coaxial cables 35 to 37 needs to have a length of 1.5 m or more. The radius of the circle is longer than 1.5 m, or at least one of the first to third coaxial cables 35 to 37 is longer than 3 m depending on the distance that the position of the switch 22 is away from the plane including the circle. Sometimes it may be 5 meters or more in length. In addition, depending on the device configuration, when the radius of the circle is shorter than 1.5 m, for example, the radius of the circle may be 0.5 m. In that case, at least one of the first to third coaxial cables 35 to 37 is A length of 0.5 m or more is required. In addition, the lengths of the first to third coaxial cables 35 to 37 may be paraphrased as distances at which the switch 22 and the first to third fixed matching units 23a, 23b, and 23c are separated from each other.

  The reason why the first to third external electrodes 3, 33, 34 are arranged on the circumference is that, as shown in FIG. 2, a total of 30 external electrodes can be arranged on the circumference. Because. That is, one RF power supply 31, one switch 22, first to third fixed matching units 23a, 23b, and 23c and first to third external electrodes 3, 33, and 34 are set as one set. By arranging the groups, 30 external electrodes can be arranged on the circumference shown in FIG.

  The switch 22 is configured to electrically connect the RF power source 31 and the first fixed matching unit 23a to the first path, and electrically connect the RF power source 31 and the second fixed matching unit 23b to the second path. And a third path that electrically connects the RF power source 31 and the third fixed matching unit 23c. That is, a high frequency output can be supplied from the RF power source 31 to the first external electrode 3 via the switching unit 22 and the first fixed matching unit 23a, and the switching unit 22 and the second fixed matching unit can be supplied from the RF power source 31. A high-frequency output can be supplied to the second external electrode 33 via 23b, and a high-frequency output is supplied to the third external electrode 34 from the RF power source 31 via the switch 22 and the third fixed matching unit 23c. be able to.

  FIG. 3 is a cross-sectional view showing in detail the first external electrode 3 shown in FIGS. 1 and 2 and the periphery thereof. As shown in FIG. 3, the 1st container 7 is arrange | positioned inside the 1st external electrode 3, and various containers can be used as the 1st container 7, for example, a container for drinks, food A container for goods, a container for medicines, a container for medicines, a container for daily necessities or a container for chemicals. An example of the first container 7 is a plastic container such as a plastic bottle.

  The resin used when molding plastic containers is polyethylene terephthalate resin (PET), polyethylene terephthalate-based copolyester resin (copolymer using cyclohexane dimethanol instead of ethylene glycol as the alcohol component of polyester is called PETG) Eastman), polybutylene terephthalate resin, polyethylene naphthalate resin, polyethylene resin, polypropylene resin (PP), cycloolefin copolymer resin (COC, cyclic olefin copolymer), ionomer resin, poly-4-methylpentene-1 resin , Polymethyl methacrylate resin, polystyrene resin, ethylene-vinyl alcohol copolymer resin, acrylonitrile resin, polyvinyl chloride resin, polyvinylidene chloride resin, polyamido Resin, polyamideimide resin, polyacetal resin, polycarbonate resin, polysulfone resin, or ethylene tetrafluoride resin, acrylonitrile - styrene resins, acrylonitrile - butadiene - styrene resin, can be exemplified. Among these, PET is particularly preferable.

  Each of the second external electrode 33 and the third external electrode 34 shown in FIGS. 1 and 2 has a structure similar to that of the first external electrode 3 shown in FIG. A second container (not shown) is arranged inside the second external electrode 33, and a third container (not shown) is arranged inside the third external electrode 34. Each of the second container and the third container is the same as the first container 7.

  In addition, the plasma CVD apparatus includes a first gas supply mechanism that supplies a source gas into the first container 7 and a first vacuum exhaust mechanism that evacuates the inside of the first container 7. In addition, the plasma CVD apparatus includes a second gas supply mechanism that supplies a source gas into the second container, a third gas supply mechanism that supplies a source gas into the third container, and a second container A second evacuation mechanism for evacuating and a third evacuation mechanism for evacuating the interior of the third container. Each of the second and third gas supply mechanisms is similar to the first gas supply mechanism, and each of the second and third vacuum exhaust mechanisms is similar to the first vacuum exhaust mechanism.

  In the present embodiment, the source gas is supplied into the first container 7 by the first gas supply mechanism, the source gas is supplied into the second container by the second gas supply mechanism, and the third container Although the source gas is supplied by the third gas supply mechanism, the source gas may be supplied by one gas supply mechanism inside each of the first to third containers.

In the present embodiment, the first container 7 is evacuated by the first evacuation mechanism, the second container is evacuated by the second evacuation mechanism, and the third container is evacuated by the third evacuation mechanism. However, the inside of each of the first to third containers may be evacuated by one vacuum evacuation mechanism.
In the present embodiment, the first to third coaxial cables 35 to 37 are used. However, if the frequency of the RF power supply 31 is 50 kHz or less, it is not always necessary to use the coaxial cable, and cables other than the coaxial cable may be used. It may be used. The same applies to the cables connecting the first to third fixed matching units 32a to 32c and the first to third external electrodes 3, 33, 34 respectively.
In this embodiment, a method in which a plurality of external electrodes are arranged on the circumference is used. However, the present invention is not limited to this, and a method in which a plurality of external electrodes are arranged on a straight line is used. Also good.

The plasma CVD apparatus will be described below with reference to FIG.
The plasma CVD apparatus includes a vacuum chamber 6, and the vacuum chamber 6 includes a conductive lid 5, an insulating member 4, and a first external electrode 3. An insulating member 4 is disposed under the lid 5, and a first external electrode 3 is disposed under the insulating member 4. The first external electrode 3 includes an upper electrode 2 and a lower electrode 1, and is configured such that the upper portion of the lower electrode 1 is detachably attached to the lower portion of the upper electrode 2 via an O-ring 8. Further, the first external electrode 3 is insulated from the lid portion 5 by the insulating member 4.

  A space is formed inside the first external electrode 3, and this space is for accommodating the first container 7 to be coated. The space in the first external electrode 3 is formed to be slightly larger than the outer shape of the first container 7 accommodated therein. That is, the first external electrode 3 is arranged so as to surround the outside of the first container 7. The insulating member 4 and the lid portion 5 are provided with an opening portion that leads to a space in the first external electrode 3. Further, a space is provided inside the lid portion 5, and this space is connected to the space in the first external electrode 3 through the opening. The space in the first external electrode 3 is sealed from the outside by an O-ring 8 disposed between the upper electrode 2 and the lower electrode 1.

  The lower electrode 1 of the first external electrode 3 is electrically connected to the first fixed matching unit 23a through the first copper plate 32a, and the first fixed matching unit 23a connects the first coaxial cable 35 to the first fixed matching unit 23a. Via the switch 22. The switch 22 is electrically connected to the RF power source 31.

  The first internal electrode 9 is inserted into the space inside the first external electrode 3 from the top of the lid 5 through the space in the lid 5 and the opening of the lid 5 and the insulating member 4. That is, the base end of the first internal electrode 9 is disposed on the upper portion of the lid 5, and the tip end of the first internal electrode 9 is a space in the first external electrode 3, and is in the first external electrode 3. It arrange | positions inside the accommodated 1st container 7. FIG.

  The first internal electrode 9 has a tube shape whose inside is hollow. A gas outlet 9 a is provided at the tip of the first internal electrode 9. One side of the pipe 10 is connected to the proximal end of the first internal electrode 9, and the other side of the pipe 10 is connected to one side of the mass flow controller 19 via the vacuum valve 16. The other side of the mass flow controller 19 is connected to the source gas generation source 20 through the pipe 11. This source gas generation source 20 generates hydrocarbon gas or the like. The inside of the first internal electrode 9 has a gas supply path for supplying a source gas into the first container 7.

  The first internal electrode 9 is grounded via the lid 5. The space in the lid 5 is connected to one side of the pipe 12, and the other side of the pipe 12 is open to the atmosphere via the vacuum valve 17. The space in the lid 5 is connected to one side of the pipe 13, and the other side of the pipe 13 is connected to the vacuum pump 21 via the vacuum valve 18. This vacuum pump 21 is connected to the exhaust side. The pipe 13 has an exhaust path for evacuating the inside of the first container 7.

  The automatic matching device of the prior art has two variable capacitors, and matches the high frequency output by changing the capacitance values of these variable capacitors. In contrast, the first to third fixed matching units 23a, 23b, and 23c are inexpensive by replacing the variable capacitors with fixed capacitors, unlike the automatic matching units of the prior art. However, it is preferable to derive a suitable value for the capacitance value of the fixed capacitor in advance through experiments or the like, and to incorporate the fixed capacitors having the capacitance value into the first to third fixed matching units 23a, 23b, and 23c.

  The RF power source 31 has a first function of changing a predetermined frequency within a range of ± 10% or less. Further, the RF power source 31 is a reflected wave (plasma reflected wave) from the first external electrode 3, the second external electrode 33 or the third external electrode 34, or a voltage and current output from the RF power source 31. The second function is used to change the frequency using the first function so as to reduce the phase difference. That is, the first to third fixed matching units 23a, 23b, and 23c cannot perform perfect matching as in the conventional automatic matching unit. Therefore, the first external electrode 3 and the second external electrode 33 are not matched. Alternatively, a phase difference occurs between the reflected wave of plasma from the third external electrode 34 or the voltage and current output from the RF power source 31. The RF power source 31 detects this reflected wave or phase difference and changes the frequency within a range of ± 10% or less, thereby reducing or eliminating the reflected wave or phase difference. In other words, by changing the frequency of the RF power source 31, impedance matching that changes depending on the plasma state can be performed.

  Moreover, since the speed of changing the frequency of the RF power supply 31 is faster than the speed of changing the variable capacitor of the automatic matching device, the phase difference between the voltage and current of the high frequency output can be quickly eliminated. As a result, plasma ignition can be shortened. Note that when the phase difference between the voltage and current of the high frequency output is eliminated, power can be efficiently applied to the external electrode.

  Next, a method of forming a DLC film on the inner surfaces of the first container 7, the second container, and the third container using the plasma CVD apparatus shown in FIGS.

  First, the vacuum valve 17 is opened to open the vacuum chamber 6 to the atmosphere. Thereby, air enters the space in the lid 5 and the space in the first external electrode 3 through the pipe 12, and the vacuum chamber 6 is brought to atmospheric pressure. Similarly, the atmospheric pressure is also set in the vacuum chamber of the second external electrode 33 and the vacuum chamber of the third external electrode 34. Next, the lower electrode 1 of the first external electrode 3 is removed from the upper electrode 2, and the first container 7 is inserted into the space in the upper electrode 2 from the lower side of the upper electrode 2 and installed. Thereby, the outside of the first container 7 is surrounded by the first external electrode 3. At this time, the first internal electrode 9 is inserted into the first container 7. Similarly, the outside of the second container is surrounded by the second external electrode 33, and the outside of the third container is surrounded by the third external electrode 34. Similarly, at this time, the second internal electrode is inserted into the second container, and the third internal electrode is inserted into the third container. Next, the lower electrode 1 is attached to the lower part of the upper electrode 2, and the first external electrode 3 is sealed with an O-ring 8. Similarly, each of the second external electrode 33 and the third external electrode 34 is also sealed with an O-ring.

  Thereafter, after the vacuum valve 17 is closed, the vacuum valve 18 is opened and the vacuum pump 21 is operated. As a result, the inside of the vacuum chamber 6 (the space in the first external electrode 3 and the space in the lid 5) including the inside of the first container 7 is exhausted through the pipe 13, and the inside of the first external electrode 3 is evacuated. To do. Similarly, each of the second external electrode 33 and the third external electrode 34 is evacuated.

  Next, the vacuum valve 16 is opened, a hydrocarbon gas is generated in the raw material gas generation source 20, this hydrocarbon gas is introduced into the pipe 11, and the hydrocarbon gas whose flow rate is controlled by the mass flow controller 19 is supplied to the pipe 10 and the ground. The gas is blown out from the gas blowing port 9a through the first internal electrode 9 having a potential. Thereby, the hydrocarbon gas is introduced into the first container 7. The inside of the vacuum chamber 6 and the inside of the first container 7 are maintained at a pressure suitable for DLC film formation (for example, about 0.05 to 0.5 Torr) by controlling the balance between the gas flow rate and the exhaust capacity. Similarly, each of the second container and the third container is maintained at a pressure suitable for DLC film formation (for example, about 0.05 to 0.5 Torr) by controlling the balance between the gas flow rate and the exhaust capacity.

  Thereafter, a high frequency output with a frequency of, for example, 6 MHz is supplied from the RF power source 31 to the first external electrode 3 via the switch 22 and the first fixed matching unit 23a. Thereby, plasma is ignited between the first external electrode 3 and the first internal electrode 9. At this time, the first fixed matching unit 23a matches the impedance of the first external electrode 3 and the first internal electrode 9 by the inductance L and the capacitance C. At the same time, the RF power source 31 detects the phase difference between the reflected wave of the plasma from the first external electrode 3 or the voltage and current output from the RF power source 31, and changes the frequency within a range of ± 10% or less. Therefore, the reflected wave or phase difference is reduced or eliminated. In this way, impedance matching that changes depending on the plasma state is performed. Then, hydrocarbon-based plasma is generated in the first container 7, and a DLC film is formed on the inner surface of the first container 7. The film formation time at this time is as short as several seconds.

  Next, the high-frequency current path is switched by the switch 22, and a high-frequency output with a frequency of 6 MHz is supplied from the RF power source 31 to the second external electrode 33 through the switch 22 and the second fixed matching unit 23 b. Thereby, plasma is ignited between the second external electrode 33 and the second internal electrode. At this time, the second fixed matching unit 23b is matched with the impedance of the second external electrode 33 and the second internal electrode by the inductance L and the capacitance C. At the same time, the RF power supply 31 detects the phase difference between the reflected wave of the plasma from the second external electrode 33 or the voltage and current output from the RF power supply 31, and changes the frequency within a range of ± 10% or less. Therefore, the reflected wave or phase difference is reduced or eliminated. In this way, impedance matching that changes depending on the plasma state is performed. Then, hydrocarbon-based plasma is generated in the second container, and a DLC film is formed on the inner surface of the second container. The film formation time at this time is as short as several seconds.

  Next, the high-frequency current path is switched by the switch 22, and a high-frequency output with a frequency of 6 MHz is supplied from the RF power source 31 to the third external electrode 34 via the switch 22 and the third fixed matching unit 23 c. Thereby, plasma is ignited between the third external electrode 34 and the third internal electrode. At this time, the third fixed matching unit 23c matches the impedance of the third external electrode 34 and the third internal electrode by the inductance L and the capacitance C. At the same time, the RF power source 31 detects the phase difference between the reflected wave of the plasma from the third external electrode 34 or the voltage and current output from the RF power source 31, and changes the frequency within a range of ± 10% or less. Therefore, the reflected wave or phase difference is reduced or eliminated. In this way, impedance matching that changes depending on the plasma state is performed. Then, hydrocarbon-based plasma is generated in the third container, and a DLC film is formed on the inner surface of the third container. The film formation time at this time is as short as several seconds.

  In the present embodiment, the high frequency output supplied to the first to third external electrodes 3, 33, 34 is a continuous wave. However, the present invention is not limited to this, and the first to third external electrodes 3 are not limited thereto. , 33, 34 may be a pulsed output having a predetermined cycle and a DUTY ratio.

Next, the high frequency output from the RF power source 31 is stopped, the vacuum valve 16 is closed, and the supply of the source gas is stopped. Thereafter, the vacuum valve 18 is opened, and the hydrocarbon gas in the vacuum chamber 6 and the first container 7 is exhausted by the vacuum pump 21. Thereafter, the vacuum valve 18 is closed and the vacuum pump 21 is stopped. The degree of vacuum in the vacuum chamber 6 at this time is 5 × 10 ⁻³ Torr to 5 × 10 ⁻² Torr. Thereafter, the vacuum valve 17 is opened to open the vacuum chamber 6 to the atmosphere. Similarly, the hydrocarbon gas in each of the second container and the third container is exhausted by a vacuum pump, and the inside of the vacuum chamber is opened to the atmosphere.

  Next, the DLC film can be formed in many containers by repeating the film forming method described above.

  According to the above embodiment, the first to third fixed matching units 23a, 23b, 23c are connected to the first to third external electrodes 3, 33, 34, respectively, and the first to third fixed matching units 23a are connected. , 23b, and 23c, the RF power source 31 is provided with a function of varying the frequency where the matching is insufficient. Thereby, an expensive automatic matching device can be replaced with an inexpensive fixed matching device. For this reason, it becomes possible to reduce the cost of the plasma CVD apparatus which performs the film-forming process on the inner surface of a some container.

  In the present embodiment, one RF power source 31 is connected to three fixed matching devices by the switcher 22, but the present invention is not limited to this, and two or four RF power sources are switched by the switcher. It is also possible to connect to more than one fixed matcher.

  In the present embodiment, one RF power supply 31 is connected to three fixed matching devices by the switcher 22, but one RF power supply is connected to one fixed matching device without using the switcher 22. It is also possible to implement the plasma CVD apparatus shown in FIG. 2 by providing a configuration, that is, one RF power source, one fixed matching unit, and one external electrode as one set, and preparing 30 sets thereof.

[Second Embodiment]
4, 5, and 6 are cross-sectional views schematically showing a plasma CVD apparatus according to one aspect of the present invention. The same parts as those in FIGS. The description to be omitted is omitted.

  As shown in FIG. 4, the plasma CVD apparatus has an RF power source (high frequency power source) 31. The RF power source 31 is electrically connected to the fixed matching unit 23. The fixed matching unit 23 is electrically connected to the switching unit 22. The fixed matching unit 23 and the switching unit 22 are preferably formed integrally. The fixed matching unit 23 and the switching unit 22 are preferably electrically connected by a copper plate 32 (see FIG. 5). The fixed matching unit 23 and the switching unit 22 are electrically connected by a coaxial cable or a cable other than the coaxial cable. It may be connected to. The size of the copper plate 32 is, for example, a width of 30 mm and a thickness of 2 mm. By using such a copper plate 32, the resistance between the fixed matching device 23 and the switch 22 can be reduced. In particular, since most of the high-frequency current flows on the surface of the copper plate 32, the resistance can be lowered as compared with wiring such as a cable or a coaxial cable.

  The switch 22 is electrically connected to the first external electrode 3, the second external electrode 33, and the third external electrode 34. Specifically, the switch 22 and the first external electrode 3 are preferably electrically connected by a first coaxial cable 35, and the switch 22 and the second external electrode 33 are connected by a second coaxial cable. The switch 22 and the third external electrode 34 are preferably electrically connected by a third coaxial cable 37. The reason why the first to third coaxial cables 35 to 37 are connected as described above is that the switch 22 and the first to third outer electrodes 3, 33, and 34 of the plasma CVD apparatus shown in FIG. 4 are shown in FIG. This is because of such a positional relationship.

  That is, as shown in FIG. 5, the first to third external electrodes 3, 33, and 34 are arranged on the circumference, and the switch 22 is arranged inside the circle. The distance to each of the third external electrodes 3, 33, and 34 is about the radius of a circle even if it is short. Further, the switching device 22 is not necessarily arranged on the plane including the circle, and when the switching device 22 is arranged above the plane, the switching device 22 and the first to third external electrodes 3 and 33 are arranged. , 34 is longer than the radius of the circle. Therefore, if the radius of the circle is 1.5 m, for example, at least one of the first to third coaxial cables 35 to 37 needs to have a length of 1.5 m or more. The radius of the circle is longer than 1.5 m, or at least one of the first to third coaxial cables 35 to 37 is longer than 3 m depending on the distance that the position of the switch 22 is away from the plane including the circle. Sometimes it may be 5 meters or more in length. In addition, depending on the device configuration, when the radius of the circle is shorter than 1.5 m, for example, the radius of the circle may be 0.5 m. In that case, at least one of the first to third coaxial cables 35 to 37 is A length of 0.5 m or more is required. In addition, the lengths of the first to third coaxial cables 35 to 37 may be rephrased as a distance where the switch 22 and the first to third outer electrodes 3, 33, and 34 are separated from each other.

  The reason why the first to third external electrodes 3, 33, and 34 are arranged on the circumference is that, as shown in FIG. 5, a total of 30 external electrodes can be arranged on the circumference. Because. That is, one RF power source 31, one automatic matching unit 23, one switching unit 22, and first to third external electrodes 3, 33, 34 are set as one set, and 10 sets are arranged as shown in FIG. 30 external electrodes can be arranged on the circumference shown in FIG.

  The switching unit 22 includes a first path that electrically connects the fixed matching unit 23 and the first external electrode 3, and a second path that electrically connects the fixed matching unit 23 and the second external electrode 33. There is a third path that electrically connects the path and the fixed matching unit 23 and the third external electrode 34. That is, a high frequency output can be supplied from the RF power source 31 to the fixed matching unit 23, and a high frequency output can be supplied from the fixed matching unit 23 to the first external electrode 3 via the switch 22. A high frequency output can be supplied to the second external electrode 33 via the switch 22, and a high frequency output can be supplied from the fixed matching unit 23 to the third external electrode 34 via the switch 22.

FIG. 6 is a cross-sectional view showing in detail the first external electrode 3 shown in FIGS. 4 and 5 and the periphery thereof.
Each of the second external electrode 33 and the third external electrode 34 shown in FIGS. 4 and 5 has a structure similar to that of the first external electrode 3 shown in FIG. A second container (not shown) is arranged inside the second external electrode 33, and a third container (not shown) is arranged inside the third external electrode 34. Each of the second container and the third container is the same as the first container 7.

Hereinafter, a plasma CVD apparatus will be described with reference to FIG.
The lower electrode 1 of the first external electrode 3 is electrically connected to the switch 22 via the first coaxial cable 35, and the switch 22 is electrically connected to the fixed matching device 23 via the copper plate 32. Has been. The fixed matching unit 23 is electrically connected to the RF power source 31.

  The automatic matching device of the prior art has two variable capacitors, and matches the high frequency output by changing the capacitance values of these variable capacitors. On the other hand, the fixed matching unit 23 is inexpensive by replacing the variable capacitor with a fixed capacitor, unlike the automatic matching unit of the prior art. However, as the capacitance value of the fixed capacitor, a suitable value may be derived in advance by experiments or the like, and a fixed capacitor having the capacitance value may be incorporated in the fixed matching unit 23.

  Since the fixed matching unit 23 cannot perform perfect matching like the automatic matching unit of the prior art, the reflection of plasma from the first external electrode 3, the second external electrode 33, or the third external electrode 34. A phase difference occurs between the voltage or current output from the wave or RF power supply 31. The RF power source 31 detects this reflected wave or phase difference and changes the frequency within a range of ± 10% or less, thereby reducing or eliminating the reflected wave or phase difference. In other words, by changing the frequency of the RF power source 31, impedance matching that changes depending on the plasma state can be performed.

  Next, a method of forming a DLC film on the inner surfaces of the first container 7, the second container, and the third container using the plasma CVD apparatus shown in FIGS.

  First, in the same manner as in the first embodiment, the atmospheric pressure is also set in the vacuum chamber of the first external electrode 3, the vacuum chamber of the second external electrode 33, and the vacuum chamber of the third external electrode 34. . Next, in the same manner as in the first embodiment, the outside of the first container 7 is surrounded by the first external electrode 3, the outside of the second container is surrounded by the second external electrode 33, and the third container The outside of the container is surrounded by a third external electrode 34. At this time, the first internal electrode 9 is inserted into the first container 7, the second internal electrode is inserted into the second container, and the third internal electrode is inserted into the first container 7. It will be in the state inserted in 3 containers. Next, each of the first external electrode 3, the second external electrode 33, and the third external electrode 34 is sealed with an O-ring in the same manner as in the first embodiment.

  Thereafter, the inside of the first external electrode 3, the second external electrode 33, and the third external electrode 34 are evacuated by the same method as in the first embodiment.

  Next, in the same manner as in the first embodiment, DLC film formation is performed in each of the first container 7, the second container, and the third container by controlling the balance between the gas flow rate and the exhaust capacity. The pressure is suitable for the pressure (for example, about 0.05 to 0.5 Torr).

  Thereafter, a high frequency output with a frequency of, for example, 6 MHz is supplied from the RF power source 31 to the first external electrode 3 via the fixed matching unit 23 and the switching unit 22. Thereby, plasma is ignited between the first external electrode 3 and the first internal electrode 9. At this time, the fixed matching unit 23 is matched with the impedance of the first external electrode 3 and the first internal electrode 9 by the inductance L and the capacitance C. At the same time, the RF power source 31 detects the phase difference between the reflected wave of the plasma from the first external electrode 3 or the voltage and current output from the RF power source 31, and changes the frequency within a range of ± 10% or less. Therefore, the reflected wave or phase difference is reduced or eliminated. In this way, impedance matching that changes depending on the plasma state is performed. Then, hydrocarbon-based plasma is generated in the first container 7, and a DLC film is formed on the inner surface of the first container 7. The film formation time at this time is as short as several seconds.

  Next, the high-frequency current path is switched by the switch 22, and a high-frequency output having a frequency of 6 MHz is supplied from the RF power source 31 to the second external electrode 33 through the fixed matching unit 23 and the switch 22. Thereby, plasma is ignited between the second external electrode 33 and the second internal electrode. At this time, the second fixed matching unit 23b is matched with the impedance of the second external electrode 33 and the second internal electrode by the inductance L and the capacitance C. At the same time, the RF power supply 31 detects the phase difference between the reflected wave of the plasma from the second external electrode 33 or the voltage and current output from the RF power supply 31, and changes the frequency within a range of ± 10% or less. Therefore, the reflected wave or phase difference is reduced or eliminated. In this way, impedance matching that changes depending on the plasma state is performed. Then, hydrocarbon-based plasma is generated in the second container, and a DLC film is formed on the inner surface of the second container. The film formation time at this time is as short as several seconds.

  Next, the high-frequency current path is switched by the switch 22, and a high-frequency output having a frequency of 6 MHz is supplied from the RF power source 31 to the third external electrode 34 via the fixed matching unit 23 and the switch 22. Thereby, plasma is ignited between the third external electrode 34 and the third internal electrode. At this time, the third fixed matching unit 23c matches the impedance of the third external electrode 34 and the third internal electrode by the inductance L and the capacitance C. At the same time, the RF power source 31 detects the phase difference between the reflected wave of the plasma from the third external electrode 34 or the voltage and current output from the RF power source 31, and changes the frequency within a range of ± 10% or less. Therefore, the reflected wave or phase difference is reduced or eliminated. In this way, impedance matching that changes depending on the plasma state is performed. Then, hydrocarbon-based plasma is generated in the third container, and a DLC film is formed on the inner surface of the third container. The film formation time at this time is as short as several seconds.

  Next, in the same manner as in the first embodiment, the hydrocarbon gas in the first container 7, the second container, and the third container is exhausted by a vacuum pump, and the vacuum chamber is opened to the atmosphere. To do.

  Next, the DLC film can be formed in many containers by repeating the film forming method described above.

  According to the embodiment, the fixed matching unit 23 is connected to each of the first to third external electrodes 3, 33, and 34 via the switching unit 22, and the matching that is insufficient in the fixed matching unit 23 is RF. The power supply 31 has a function of changing the frequency. Thereby, an expensive automatic matching device can be replaced with an inexpensive fixed matching device. For this reason, it becomes possible to reduce the cost of the plasma CVD apparatus which performs the film-forming process on the inner surface of a some container.

  In the present embodiment, the switch 22 is arranged between the first to third external electrodes 3, 33, 34 and the fixed matching unit 23, and the path of the high-frequency current from the RF power source 31 by the switch 22. It is set as the structure which switches. Accordingly, it is possible to supply a high frequency output from the RF power source 31 to a plurality of external electrodes by one fixed matching unit 23. Therefore, the cost of the plasma CVD apparatus can be reduced as compared with the first embodiment.

  In the present embodiment, one fixed matching unit 23 is connected to three external electrodes by the switching unit 22, but the present invention is not limited to this. It is possible to connect to four or more fixed matchers.

[Third Embodiment]
7 is a configuration diagram schematically illustrating a plasma CVD apparatus according to an aspect of the present invention, and FIG. 8 is a partially exploded view of the first upper electrode of the plasma CVD apparatus illustrated in FIG. 7. It is a perspective view. 7 and 8, the same parts as those in FIGS. The first fixed matching unit 23a, the switching unit 22, and the RF power source 31 that are electrically connected to the first upper electrode 110 shown in FIG. 7 have the same structure as that shown in FIGS. FIG. 7 is a diagram corresponding to FIG.

  The plasma CVD apparatus according to the present embodiment has an RF power source (high frequency power source) 31 shown in FIGS. 1 and 2, a switcher 22 electrically connected to the RF power supply 31, and a switcher 22. The first to third fixed matching units 23a, 23b, and 23c are provided. As shown in FIG. 7, the first fixed matching unit 23a is electrically connected to a first upper electrode (also referred to as a first electrode) 110 by a first copper plate 32a. The second fixed matching unit 23b is electrically connected to a second upper electrode (also referred to as a second electrode) (not shown) by a second copper plate (not shown). The third fixed matching unit 23c is electrically connected to a third upper electrode (also referred to as a third electrode) (not shown) by a third copper plate (not shown).

  FIG. 7 is a cross-sectional view showing in detail the first upper electrode 110 shown in FIGS. 1 and 2 and the periphery thereof. The plasma CVD apparatus shown in FIG. 7 is an apparatus for forming a DLC film on the outer surface of the first container 7. As the first container 7, a container similar to that of the first embodiment can be used, and for example, a chemical bottle (vial) or a plastic container can be used.

  Each of the second upper electrode and the third upper electrode has the same structure as the first upper electrode 110. A second container (not shown) is arranged on the second upper electrode, and a third container (not shown) is arranged on the third upper electrode. Each of the second container and the third container is the same as the first container 7.

  In addition, the plasma CVD apparatus includes a first gas supply mechanism that supplies a source gas to the outer surface of the first container 7 and a first vacuum exhaust mechanism that evacuates the outside of the first container 7. The plasma CVD apparatus also includes a second gas supply mechanism that supplies a source gas to the outer surface of the second container, a third gas supply mechanism that supplies a source gas to the outer surface of the third container, A second evacuation mechanism for evacuating the outside of the container; and a third evacuation mechanism for evacuating the outside of the third container. Each of the second and third gas supply mechanisms is similar to the first gas supply mechanism, and each of the second and third vacuum exhaust mechanisms is similar to the first vacuum exhaust mechanism.

  As shown in FIG. 7, the switch 22 and the first fixed matcher 23a are preferably electrically connected by a first coaxial cable 35. The switch 22 and the second fixed matcher 23b are The second coaxial cable 36 may be electrically connected, and the switch 22 and the third fixed matching unit 23c may be electrically connected by a third coaxial cable 37. The reason why the first to third coaxial cables 35 to 37 are connected as described above is that the switch 22 and the first to third fixed matching units 23a to 23c of the plasma CVD apparatus shown in FIG. 1 are shown in FIG. This is because of the positional relationship.

  The switch 22 is configured to electrically connect the RF power source 31 and the first fixed matching unit 23a to the first path, and electrically connect the RF power source 31 and the second fixed matching unit 23b to the second path. And a third path that electrically connects the RF power source 31 and the third fixed matching unit 23c. That is, a high frequency output from the RF power source 31 can be supplied to the first fixed matching unit 23 a via the switch 22, and a high frequency output from the RF power source 31 to the second fixed matching unit 23 b via the switch 22. The high frequency output from the RF power source 31 can be supplied to the third fixed matching unit 23 c via the switch 22.

  In this embodiment, the source gas is supplied to the outer surface of the first container 7 by the first gas supply mechanism, the source gas is supplied to the outer surface of the second container by the second gas supply mechanism, and the third Although the source gas is supplied to the outer surface of the first container by the third gas supply mechanism, the source gas may be supplied to the outer surface of each of the first to third containers by one gas supply mechanism.

  In the present embodiment, the outside of the first container 7 is evacuated by the first evacuation mechanism, the outside of the second container is evacuated by the second evacuation mechanism, and the outside of the third container is evacuated. Is evacuated by the third evacuation mechanism, but the outside of each of the first to third containers may be evacuated by one evacuation mechanism.

  In the present embodiment, the first to third coaxial cables 35 to 37 are used. However, if the frequency of the RF power supply 31 is 50 kHz or less, it is not always necessary to use the coaxial cable, and cables other than the coaxial cable may be used. It may be used. The same applies to the cables connecting the first to third fixed matching units 23 a to 23 c and the first to third upper electrodes 110.

  In this embodiment, a method in which a plurality of upper electrodes are arranged on the circumference is used. However, the present invention is not limited to this, and a method in which a plurality of upper electrodes are arranged on a straight line is used. Also good.

A plasma CVD apparatus will be described below with reference to FIGS.
This plasma CVD apparatus has a vacuum chamber (not shown), and this vacuum chamber is connected to a first vacuum exhaust mechanism including a leak valve and a vacuum pump (not shown). A vacuum valve (not shown) is attached between the vacuum pump and the vacuum chamber.

  Inside the vacuum chamber, as shown in FIG. 7, a first upper electrode 110 and a first counter earth electrode (lower electrode) 120 are arranged. The distance between the first upper electrode 110 and the first counter ground electrode 120 can be adjusted in the range of 0 mm to 90 mm. The first upper electrode 110 is electrically connected to the first fixed matching unit 23a via the first copper plate 32a. The first fixed matching unit 23a is connected to the switch 22 by the first coaxial cable 35. Electrically connected. The switch 22 is electrically connected to the high frequency power supply 31. The first counter earth electrode 120 is grounded, and a shower head (not shown) of the first gas supply mechanism is attached. From this shower head, the source gas is supplied in the form of a shower in the space between the first upper electrode 110 and the first counter earth electrode 120, whereby the source gas is supplied near the outer surface of the first container 7. The In addition to the shower head, the first gas supply mechanism described above has a pipe 122 for introducing a source gas into the shower head, a mass flow controller (not shown) outside the vacuum chamber, and a source gas supply source. Toluene is preferred as the source gas.

  As shown in FIGS. 7 and 8, the first upper electrode 110 includes an RF application electrode 112 connected to the first fixed matching unit 23a. The RF application electrode 112 has a substantially disk-shaped portion. Outer electrodes 114 and internal electrodes 116 are attached to the surface of the portion facing the first counter earth electrode 120, respectively. Note that an RF shield 119 is attached to the RF application electrode 112 via an insulating material 119a on the surface and the side opposite to the surface on which the outer peripheral electrode 114 is attached.

The outer peripheral electrode 114 is an electrode for surrounding the outer surface of the first container 7, and is detachably attached to the RF application electrode 112 by a bolt 115. The planar shape of the outer peripheral electrode 114 is substantially the same as the substantially disk-shaped portion of the RF application electrode 112.
A plurality of substantially cylindrical through holes 114 a are provided on the surface of the outer peripheral electrode 114 facing the first counter earth electrode 120. The through hole 114a is for arranging the internal electrode 116, the container fixing ring 117, and the first container 7 therein, and the depth thereof is, for example, about 50 mm deeper than the height of the first container 7, and also in the horizontal direction. The size of the cross section is larger than the cross section of the first container 7.

The internal electrode 116 is an electrode inserted into the first container 7, and is located at the mouth and neck 7 a of the first container 7 and in the vicinity thereof. The side surface of the internal electrode 116 has a shape substantially along the mouth and neck portion 7a of the first container 7 and the inner surface in the vicinity thereof. That is, the first container 7 has a surface that is substantially equidistant from the mouth and neck 7a and the inner surface in the vicinity thereof. The surface of the internal electrode 116 may be substantially similar to the mouth and neck portion 7a of the first container 7 and the inner surface shape in the vicinity thereof.
The internal electrode 116 is fixed to the RF application electrode 112 by passing a screw through a female screw hole (not shown) formed in the bottom surface of the internal electrode 116 and the RF application electrode 112.

  The container fixing ring 117 is inserted into the through hole 114a and attached to the RF application electrode 112 in a state where the neck 7a of the first container 7 is fitted in the cavity 117b located at the center. Specifically, as shown in FIG. 5, the container fixing ring 117 is composed of two ring dividing members 117a. Each of the ring dividing members 117a has a shape obtained by dividing the ring into substantially equal parts. When the two ring dividing members 117a are combined, a gap 117c is formed on the side surface of the ring while forming the ring. . The cavity 117b is opened to the outside from the side surface of the container fixing ring 117 through the gap 117c.

  A convex portion 117d is provided on the inner peripheral surface of the ring dividing member 117a. When the inner peripheral surface of the ring dividing member 117a sandwiches the first container 7, the convex portion 117d fits into the neck portion 7a. For this reason, the first container 7 cannot be removed from the through hole 114a. A bolt 118 is used when attaching the ring dividing member 117 a to the RF application electrode 112.

  Next, an example of a method for forming a DLC film on the outer surfaces of the first container 7, the second container, and the third container using the plasma CVD apparatus shown in FIG. 7 will be described. In this example, the distance between the outer peripheral electrode 114 of the first upper electrode 110 and the first counter earth electrode 120 is, for example, 30 mm or more and 50 mm or less.

  First, the vacuum valve located between the vacuum pump and the vacuum chamber is closed, and the leak chamber is opened to open the vacuum chamber to the atmosphere. Next, the bolt 118 and the container fixing ring 117 are removed from the RF application electrode 112. Then, the first container 7 is sandwiched between the inner surfaces of the ring dividing member 117a of the container fixing ring 117, and the container fixing ring 117 and the bolt 118 are RF-fitted in a state where the convex portion 117d is fitted into the neck portion 7a of the first container 7. It is attached to the application electrode 112. At this time, the internal electrode 116 is inserted into the cavity 117b, inserted into the first container 7, and located in the mouth and neck 7a and in the vicinity thereof.

  Next, the inside of the vacuum chamber is evacuated by closing the leak valve and opening the vacuum valve. At this time, the cavity 117b and the inside of the first container 7 are also exhausted through the gap 117c of the container fixing ring 117. When the inside of the vacuum chamber is in a vacuum state of about 0.2 Torr, the source gas, toluene, is vaporized, and the flow of the vaporized toluene is controlled by the mass flow controller so that the pipe 122 and the first counter ground electrode 120 Pour into the shower head. As a result, toluene is introduced between the outer peripheral electrode 114 and the first counter earth electrode 120, and toluene is supplied near the outer surface of the first container 7. The inside of the vacuum chamber becomes a steady state in about several seconds due to the balance between the controlled gas flow rate and the exhaust capacity, and is maintained at a pressure suitable for DLC film formation (for example, about 0.05 to 0.2 Torr).

  Thereafter, a high frequency output with a frequency of, for example, 6 MHz is supplied from the high frequency power source 31 to the RF application electrode 112 of the first upper electrode 110 via the switch 22 and the first fixed matching unit 23a. The high frequency output is, for example, 500 W or more and 2000 W or less. This high frequency output is transmitted from the RF application electrode 112 to the outer peripheral electrode 114 and the inner electrode 116. Thereby, plasma is ignited in the space between the outer peripheral electrode 114 and the internal electrode 116 and the first counter earth electrode 120. At this time, the first fixed matching unit 23a is matched with the impedance of the first upper electrode 110 and the first counter earth electrode 120 by the inductance L and the capacitance C. At the same time, the RF power source 31 detects the phase difference between the reflected wave of the plasma from the first upper electrode 110 or the voltage and current output from the RF power source 31, and changes the frequency within a range of ± 10% or less. Therefore, the reflected wave or phase difference is reduced or eliminated. In this way, impedance matching that changes depending on the plasma state is performed. Then, hydrocarbon-based plasma is generated outside the first container 7, and a DLC film is formed on the outer surface of the first container 7. The film formation time at this time is as short as several seconds.

  Next, the path of the high-frequency current is switched by the switcher 22, and a high-frequency output with a frequency of 6 MHz is supplied from the RF power source 31 to the second upper electrode via the switcher 22 and the second fixed matching unit 23b. The high frequency output is, for example, 500 W or more and 2000 W or less. This high frequency output is transmitted from the RF application electrode to the outer peripheral electrode and the internal electrode. Thereby, plasma is ignited in the space between the outer peripheral electrode and the internal electrode of the second upper electrode and the second counter earth electrode. At this time, the second fixed matching unit 23b is matched with the impedance of the second upper electrode and the second counter ground electrode by the inductance L and the capacitance C. At the same time, the RF power source 31 detects the phase difference between the reflected wave of the plasma from the second upper electrode or the voltage and current output from the RF power source 31 and changes the frequency within a range of ± 10% or less. The reflected wave or phase difference is reduced or eliminated. In this way, impedance matching that changes depending on the plasma state is performed. Then, hydrocarbon-based plasma is generated outside the second container, and a DLC film is formed on the outer surface of the second container. The film formation time at this time is as short as several seconds.

  Next, the path of the high frequency current is switched by the switch 22, and a high frequency output with a frequency of 6 MHz is supplied from the RF power source 31 to the third upper electrode through the switch 22 and the third fixed matching unit 23 c. The high frequency output is, for example, 500 W or more and 2000 W or less. This high frequency output is transmitted from the RF application electrode to the outer peripheral electrode and the internal electrode. As a result, plasma is ignited in the space between the outer peripheral electrode and internal electrode of the third upper electrode and the third counter earth electrode. At this time, the third fixed matching unit 23c is matched with the impedance of the third upper electrode and the third counter earth electrode by the inductance L and the capacitance C. At the same time, the RF power supply 31 detects the phase difference between the reflected wave of the plasma from the third upper electrode or the voltage and current output from the RF power supply 31, and changes the frequency within a range of ± 10% or less. The reflected wave or phase difference is reduced or eliminated. In this way, impedance matching that changes depending on the plasma state is performed. Then, hydrocarbon-based plasma is generated outside the third container, and a DLC film is formed on the outer surface of the third container. The film formation time at this time is as short as several seconds.

  In the present embodiment, the high-frequency output supplied to the first to third upper electrodes 110 is a continuous wave. However, the present invention is not limited to this, and the high-frequency output supplied to the first to third upper electrodes 110 is not limited thereto. The output may be a pulse having a predetermined cycle and a DUTY ratio.

Next, the high frequency output from the RF power source 31 is stopped, the vacuum valve is closed, and the supply of the source gas is stopped. Thereafter, the vacuum valve is opened, and the hydrocarbon gas inside the vacuum chamber and outside the first container 7 is exhausted by a vacuum pump. Thereafter, the vacuum valve is closed and the vacuum pump is stopped. The degree of vacuum in the vacuum chamber at this time is 5 × 10 ⁻³ Torr to 5 × 10 ⁻² Torr. Thereafter, the leak valve is opened to open the vacuum chamber to the atmosphere. Similarly, the hydrocarbon gas in each of the second container and the third container is exhausted by a vacuum pump, and the inside of the vacuum chamber is opened to the atmosphere.

  Next, the DLC film can be formed on the outer surfaces of many containers by repeating the film forming method described above.

  According to the present embodiment, the switch 22 is arranged between each of the first to third fixed matching units 23 a to 23 c and the RF power supply 31, and the high-frequency current path from the RF power supply 31 is routed by the switch 22. It is set as the structure switched. In the first to third fixed matching units 23a, 23b, and 23c, the RF power source 31 is provided with a function of changing the frequency where the matching is insufficient. Thereby, an expensive automatic matching device can be replaced with an inexpensive fixed matching device. For this reason, it becomes possible to reduce the cost of the plasma CVD apparatus which performs the film-forming process on the outer surface of a some container.

  In the present embodiment, one RF power source 31 is connected to three fixed matching devices by the switcher 22, but the present invention is not limited to this, and two or four RF power sources are switched by the switcher. It is also possible to connect to more than one fixed matcher.

  In the present embodiment, one RF power supply 31 is connected to three fixed matching devices by the switcher 22, but one RF power supply is connected to one fixed matching device without using the switcher 22. It is also possible to implement the plasma CVD apparatus shown in FIG. 2 by providing a configuration, that is, one RF power source, one fixed matching unit, and one external electrode as one set, and preparing 30 sets thereof.

  In addition, if the distance between each of the outer peripheral electrode 114 and the inner electrode 116 and the first container 7 is too short, the first container 7 is excessively biased, so that the DLC film becomes hard and easily peeled off. Further, if the distance between the internal electrode 116 and the first container 7 is too long, the first container 7 is less likely to be biased, so that the light shielding property of the DLC film is lowered. For this reason, it is preferable to appropriately adjust the distance between each of the outer peripheral electrode 114 and the inner electrode 116 and the first container 7. For example, the distance between the outer peripheral electrode 114 and the first container 7 is preferably 10 mm or more and 20 mm or less, for example.

[Fourth Embodiment]
FIG. 9 is a configuration diagram schematically illustrating a plasma CVD apparatus according to one embodiment of the present invention. The same parts as those in FIG. 7 are denoted by the same reference numerals, and description of the same parts is omitted. In FIG. 9, the same parts as those in FIGS. The switch 22, the fixed matching unit 23, and the RF power supply 31 that are electrically connected to the first upper electrode 110 shown in FIG. 9 have the same structure as that of FIGS. 4 and 5. FIG. 9 corresponds to FIG.

  The plasma CVD apparatus according to the present embodiment has an RF power source (high frequency power source) 31 shown in FIGS. 4 and 5, a fixed matching unit 23 electrically connected to the RF power source 31, and an electrical connection to the fixed matching unit 23. The switching device 22 is provided. As shown in FIG. 9, the switch 22 is electrically connected to a first upper electrode 110 (also referred to as a first electrode) 110 by a first coaxial cable 35, and is connected to a second upper electrode by a second coaxial cable 36. It is electrically connected to an electrode (also referred to as a second electrode) 133, and is electrically connected to a third upper electrode (also referred to as a third electrode) 134 by a third coaxial cable 37. The reason why the first to third coaxial cables 35 to 37 are connected in this way is that the switch 22 and the first to third fixed matching units 23a to 23c of the plasma CVD apparatus shown in FIG. 4 are shown in FIG. This is because of the positional relationship.

  FIG. 9 is a cross-sectional view showing in detail the first upper electrode 110 shown in FIGS. 4 and 5 and the periphery thereof. The plasma CVD apparatus shown in FIG. 9 is an apparatus for forming a DLC film on the outer surface of the first container 7. As the first container 7, a container similar to that of the second embodiment can be used, and for example, a chemical bottle (vial) or a plastic container can be used.

  Each of the second upper electrode 133 and the third upper electrode 134 has a structure similar to that of the first upper electrode 110. A second container (not shown) is disposed on the second upper electrode 133, and a third container (not illustrated) is disposed on the third upper electrode 134. Each of the second container and the third container is the same as the first container 7.

  In addition, the plasma CVD apparatus includes a first gas supply mechanism that supplies a source gas to the outer surface of the first container 7 and a first vacuum exhaust mechanism that evacuates the outside of the first container 7. The plasma CVD apparatus also includes a second gas supply mechanism that supplies a source gas to the outer surface of the second container, a third gas supply mechanism that supplies a source gas to the outer surface of the third container, A second evacuation mechanism for evacuating the outside of the container; and a third evacuation mechanism for evacuating the outside of the third container. Each of the second and third gas supply mechanisms is similar to the first gas supply mechanism, and each of the second and third vacuum exhaust mechanisms is similar to the first vacuum exhaust mechanism.

  As shown in FIG. 9, the switching unit 22 and the fixed matching unit 23 may be electrically connected by a copper plate 32.

  The switching unit 22 includes a first path that electrically connects the first upper electrode 110 and the fixed matching unit 23, and a second path that electrically connects the second upper electrode 133 and the fixed matching unit 23. There is a third path that electrically connects the path, the third upper electrode 134 and the fixed matching unit 23. That is, a high frequency output from the RF power source 31 can be supplied to the first upper electrode 110 via the fixed matching unit 23 and the switching unit 22, and a high frequency output from the RF power source 31 can be supplied via the fixed matching unit 23 and the switching unit 22. Thus, a high frequency output from the RF power source 31 can be supplied to the third upper electrode 134 via the fixed matching unit 23 and the switch 22.

A plasma CVD apparatus will be described below with reference to FIG.
This plasma CVD apparatus has a vacuum chamber (not shown), and this vacuum chamber is connected to a first vacuum exhaust mechanism including a leak valve and a vacuum pump (not shown). A vacuum valve (not shown) is attached between the vacuum pump and the vacuum chamber.

  The structure of the first upper electrode 110 and the first counter earth electrode (lower electrode) 120 located inside the vacuum chamber is the same as that of the third embodiment.

  Next, an example of a method of forming a DLC film on the outer surfaces of the first container 7, the second container, and the third container using the plasma CVD apparatus shown in FIG. 9 will be described.

  In the same manner as in the third embodiment, the vacuum chamber is opened to the atmosphere, the first container 7 is attached, the inside of the vacuum chamber is evacuated, and toluene as a raw material gas is vaporized. To the vicinity of the outer surface of the container 7. Next, a high frequency output of a frequency of, for example, 6 MHz is supplied from the high frequency power supply 31 to the RF application electrode 112 of the first upper electrode 110 via the fixed matching unit 23 and the switch 22, and the outer peripheral electrode 114, the internal electrode 116 and the first Plasma is ignited in the space between the opposite ground electrodes 120. At this time, the fixed matching unit 23 is matched with the impedance of the first upper electrode 110 and the first counter earth electrode 120 by the inductance L and the capacitance C. At the same time, the RF power source 31 detects the phase difference between the reflected wave of the plasma from the first upper electrode 110 or the voltage and current output from the RF power source 31, and changes the frequency within a range of ± 10% or less. Therefore, the reflected wave or phase difference is reduced or eliminated. In this way, impedance matching that changes depending on the plasma state is performed. Then, hydrocarbon-based plasma is generated outside the first container 7, and a DLC film is formed on the outer surface of the first container 7.

  Next, the path of the high-frequency current is switched by the switch 22, and a high-frequency output with a frequency of 6 MHz is supplied from the RF power source 31 to the second upper electrode via the fixed matching unit 23 and the switch 22, and the second upper electrode Plasma is ignited in the space between the outer peripheral electrode and the inner electrode of the first electrode and the second counter earth electrode. At this time, the fixed matching unit 23 is matched with the impedance of the second upper electrode and the second opposing ground electrode by the inductance L and the capacitance C. At the same time, the RF power source 31 detects the phase difference between the reflected wave of the plasma from the second upper electrode or the voltage and current output from the RF power source 31 and changes the frequency within a range of ± 10% or less. The reflected wave or phase difference is reduced or eliminated. In this way, impedance matching that changes depending on the plasma state is performed. Then, hydrocarbon-based plasma is generated outside the second container, and a DLC film is formed on the outer surface of the second container.

  Next, the path of the high-frequency current is switched by the switch 22, and a high-frequency output having a frequency of 6 MHz is supplied from the RF power source 31 to the third upper electrode via the fixed matching unit 23 and the switch 22, and the third upper electrode Plasma is ignited in the space between the outer peripheral electrode and the inner electrode of the first electrode and the third counter earth electrode. At this time, the fixed matching unit 23 is matched with the impedance of the third upper electrode and the third counter earth electrode by the inductance L and the capacitance C. At the same time, the RF power supply 31 detects the phase difference between the reflected wave of the plasma from the third upper electrode or the voltage and current output from the RF power supply 31, and changes the frequency within a range of ± 10% or less. The reflected wave or phase difference is reduced or eliminated. In this way, impedance matching that changes depending on the plasma state is performed. Then, hydrocarbon-based plasma is generated outside the third container, and a DLC film is formed on the outer surface of the third container.

  Next, the high frequency output from the RF power source 31 is stopped, the vacuum valve is closed, and the supply of the source gas is stopped.

  Next, the DLC film can be formed on the outer surfaces of many containers by repeating the film forming method described above.

  According to the present embodiment, the switch 22 is disposed between the fixed matching unit 23 and each of the first to third upper electrodes 110, 133, and 134, and the switch 22 generates a high-frequency current from the RF power source 31. The route is switched. Then, in the fixed matching unit 23, the RF power source 31 has a function of changing the frequency where the matching is insufficient. Thereby, an expensive automatic matching device can be replaced with an inexpensive fixed matching device. For this reason, it becomes possible to reduce the cost of the plasma CVD apparatus which performs the film-forming process on the inner surface of a some container.

  It should be noted that the first to fourth embodiments described above can be combined with each other.

DESCRIPTION OF SYMBOLS 1 Lower electrode 2 Upper electrode 3 1st external electrode 4 Insulating member 5 Lid part 6 Vacuum chamber 7 1st container 7a Neck part 8 O-ring 9 1st internal electrode 9a Gas blowing port 10,11,12,13 Piping 16 Vacuum valve 17, 18 Vacuum valve 19 Mass flow controller 20 Source gas generation source 21 Vacuum pump 22 Switch 23 Fixed matching unit 23a First fixed matching unit 23b Second fixed matching unit 23c Third fixed matching unit 31 RF power source 32 Copper plate 32a First copper plate 32b Second copper plate 32c Third copper plate 33 Second external electrode 34 Third external electrode 35 First coaxial cable 36 Second coaxial cable 37 Third coaxial cable 110 Upper electrode 112 RF application electrode 114 Peripheral electrode 114a Through hole 115 Bolt 116 Internal electrode 117 Container fixing ring 1 17a Ring dividing material 117b Cavity 117c Crevice 117d Protrusion 118 Bolt 119 RF shield 119a Insulating material 120 Opposite ground electrode (lower electrode)
122 Piping

Claims (26)

A high frequency power source of a predetermined frequency;
A fixed matching unit electrically connected to the high-frequency power source;
An electrode electrically connected to the fixed matcher;
A container disposed inside the electrode;
A gas supply mechanism for supplying a source gas into the container;
An evacuation mechanism for evacuating the container;
Comprising
The high frequency power supply reduces a first function of changing the predetermined frequency within a range of ± 10% or less, a reflected wave from the electrode, or a phase difference between a voltage and a current output from the high frequency power supply. Furthermore, the plasma CVD apparatus has a second function of changing the frequency by using the first function. A high frequency power source of a predetermined frequency;
A fixed matching unit electrically connected to the high-frequency power source;
An electrode electrically connected to the fixed matcher;
A container disposed on the electrode;
A gas supply mechanism for supplying a source gas to the outside of the container;
An evacuation mechanism for evacuating the outside of the container;
Comprising
The high frequency power supply reduces a first function of changing the predetermined frequency within a range of ± 10% or less, a reflected wave from the electrode, or a phase difference between a voltage and a current output from the high frequency power supply. Furthermore, the plasma CVD apparatus has a second function of changing the frequency by using the first function. In claim 1 or 2,
The plasma CVD apparatus, wherein a distance between the fixed matching unit and the electrode is 20 cm or less. In claim 1 or 2,
The plasma CVD apparatus, wherein the fixed matching unit and the electrode are integrally formed. A high frequency power source of a predetermined frequency;
A switch electrically connected to the high-frequency power source;
A first fixed matcher and a second fixed matcher electrically connected to the switch;
A first electrode electrically connected to the first fixed matcher;
A second electrode electrically connected to the second fixed matcher;
A first container disposed inside the first electrode;
A second container disposed inside the second electrode;
A gas supply mechanism for supplying a source gas into the first container and the second container;
An evacuation mechanism for evacuating the inside of the first container and the inside of the second container;
Comprising
The switch includes a first path that electrically connects the high-frequency power source and the first fixed matching device, and a second path that electrically connects the high-frequency power source and the second fixed matching device. Have a route,
The high-frequency power source has a first function for changing the predetermined frequency within a range of ± 10% or less, a reflected wave from the first electrode or the second electrode, or a voltage output from the high-frequency power source. A plasma CVD apparatus having a second function of changing the frequency using the first function so as to reduce a phase difference between current and current. A high frequency power source of a predetermined frequency;
A switch electrically connected to the high-frequency power source;
A first fixed matcher and a second fixed matcher electrically connected to the switch;
A first electrode electrically connected to the first fixed matcher;
A second electrode electrically connected to the second fixed matcher;
A first container disposed on the first electrode;
A second container disposed on the second electrode;
A gas supply mechanism for supplying a source gas to the outside of the first container and the outside of the second container;
An evacuation mechanism for evacuating the outside of the first container and the outside of the second container;
Comprising
The switch includes a first path that electrically connects the high-frequency power source and the first fixed matching device, and a second path that electrically connects the high-frequency power source and the second fixed matching device. Has a route,
The high-frequency power source has a first function for changing the predetermined frequency within a range of ± 10% or less, a reflected wave from the first electrode or the second electrode, or a voltage output from the high-frequency power source. A plasma CVD apparatus having a second function of changing the frequency using the first function so as to reduce a phase difference between current and current. In claim 5 or 6,
The distance between the first fixed matching device and the first electrode is 20 cm or less, and the distance between the second fixed matching device and the second electrode is 20 cm or less. Plasma CVD apparatus. In claim 5 or 6,
The first fixed matching device and the first electrode are integrally formed, and the second fixed matching device and the second electrode are formed integrally. apparatus. In any one of Claims 5 thru | or 8,
The plasma CVD apparatus characterized in that a distance of 0.5 m or more is provided between the switcher and the first fixed matcher and between the switcher and the second fixed matcher. In any one of Claims 5 thru | or 9,
The switch and the first fixed matcher are electrically connected by a first cable, and the switch and the second fixed matcher are electrically connected by a second cable. Plasma CVD apparatus. In claim 5,
A third fixed matcher electrically connected to the switch;
A third electrode electrically connected to the third fixed matcher;
A third container disposed inside the third electrode;
Have
The switch has a third path for electrically connecting the high-frequency power source and the third fixed matcher,
The gas supply mechanism can supply a source gas into the third container,
The plasma CVD apparatus, wherein the evacuation mechanism can evacuate the inside of the third container. In claim 6,
A third fixed matcher electrically connected to the switch;
A third electrode electrically connected to the third fixed matcher;
A third container disposed on the third electrode;
Have
The switch has a third path for electrically connecting the high-frequency power source and the third fixed matcher,
The gas supply mechanism can supply a source gas to the outside of the third container,
The plasma CVD apparatus, wherein the vacuum exhaust mechanism can exhaust the outside of the third container. A high frequency power source of a predetermined frequency;
A fixed matching unit electrically connected to the high-frequency power source;
A switch electrically connected to the fixed matcher;
A first electrode and a second electrode electrically connected to the switch;
A first container disposed inside the first electrode;
A second container disposed inside the second electrode;
A gas supply mechanism for supplying a source gas into the first container and the second container;
An evacuation mechanism for evacuating the inside of the first container and the inside of the second container;
Comprising
The switch includes: a first path that electrically connects the fixed matcher and the first electrode; and a second path that electrically connects the fixed matcher and the second electrode. Have
The high-frequency power source has a first function for changing the predetermined frequency within a range of ± 10% or less, a reflected wave from the first electrode or the second electrode, or a voltage output from the high-frequency power source. And a second function of changing the frequency using the first function so as to reduce the phase difference between the current and the current. A high frequency power source of a predetermined frequency;
A fixed matching unit electrically connected to the high-frequency power source;
A switch electrically connected to the fixed matcher;
A first electrode and a second electrode electrically connected to the switch;
A first container disposed on the first electrode;
A second container disposed on the second electrode;
A gas supply mechanism for supplying a source gas to the outside of the first container and the outside of the second container;
An evacuation mechanism for evacuating the outside of the first container and the outside of the second container;
Comprising
The switch includes: a first path that electrically connects the fixed matcher and the first electrode; and a second path that electrically connects the fixed matcher and the second electrode. Have
The high-frequency power source has a first function for changing the predetermined frequency within a range of ± 10% or less, a reflected wave from the first electrode or the second electrode, or a voltage output from the high-frequency power source. And a second function of changing the frequency using the first function so as to reduce the phase difference between the current and the current. In claim 13 or 14,
The plasma CVD apparatus, wherein the distance between the switch and the first electrode and the distance between the switch and the second electrode are 0.5 m or more. In any one of Claims 13 thru | or 15,
The plasma CVD, wherein the switch and the first electrode are electrically connected by a first cable, and the switch and the second electrode are electrically connected by a second cable. apparatus. In any one of Claims 13 thru | or 16,
The plasma CVD apparatus, wherein the fixed matching unit and the switching unit are integrally formed. In claim 13,
A third electrode electrically connected to the switch;
A third container disposed inside the third electrode;
Have
The switch has a third path for electrically connecting the fixed matching unit and the third electrode,
The gas supply mechanism can supply a source gas into the third container,
The plasma CVD apparatus, wherein the evacuation mechanism can evacuate the inside of the third container. In claim 14,
A third electrode electrically connected to the switch;
A third container disposed on the third electrode;
Have
The switch has a third path for electrically connecting the fixed matching unit and the third electrode,
The gas supply mechanism can supply a source gas to the outside of the third container,
The plasma CVD apparatus, wherein the vacuum exhaust mechanism can exhaust the outside of the third container. In any one of claims 1 to 19,
The plasma CVD apparatus, wherein the predetermined frequency is 10 kHz or more and 27.12 MHz or less. A step (a) of evacuating the inside of the container;
Supplying a source gas into the container (b);
A high frequency output of a predetermined frequency is supplied from a high frequency power source to the electrode through a fixed matching device, and a plasma of the source gas is generated in the container disposed inside the electrode, thereby forming a film in the container. A step (c) of forming a film;
Comprising
The high frequency power source has a function of varying the predetermined frequency within a range of ± 10% or less,
In the step (c), the function is used to change the frequency so as to reduce a reflected wave from the electrode or a phase difference between a voltage and a current output from the high-frequency power source. A film forming method, comprising a step of supplying a high-frequency output to the switch. Evacuating the outside of the container (a);
Supplying a source gas to the outside of the container (b);
A high frequency output of a predetermined frequency is supplied from a high frequency power source to an electrode through a fixed matching unit, and a plasma of the source gas is generated outside the container disposed on the electrode, thereby forming a film on the outer surface of the container A step (c) of forming a film;
Comprising
The high frequency power source has a function of varying the predetermined frequency within a range of ± 10% or less,
In the step (c), the function is used to change the frequency so as to reduce a reflected wave from the electrode or a phase difference between a voltage and a current output from the high-frequency power source. A film forming method, comprising a step of supplying a high-frequency output to the switch. A step (a) of evacuating the inside of the first container;
A step (b) of evacuating the inside of the second container;
Supplying a first source gas into the first container (c);
Supplying a second source gas into the second container (d);
A high-frequency output of a predetermined frequency is supplied from a high-frequency power source to the switch, and the high-frequency output from the switch is supplied to the first electrode via the first fixed matching unit, and is arranged inside the first electrode. (E) forming a film in the first container by generating plasma of the first source gas in the first container;
After the step (e), the high-frequency output is supplied from the high-frequency power source to the switch, the high-frequency output is supplied from the switch to a second electrode through a second fixed matching unit, and the first A step (f) of forming a film in the second container by generating a plasma of the second source gas in the second container disposed inside the second electrode;
Comprising
The switch includes a first path that electrically connects the high-frequency power source and the first fixed matching device, and a second path that electrically connects the high-frequency power source and the second fixed matching device. Have a route,
The high frequency power source has a function of varying the predetermined frequency within a range of ± 10% or less,
In the step (e), the high-frequency power source is changed while changing the frequency using the function so as to reduce a reflected wave from the first electrode or a phase difference between a voltage and a current output from the high-frequency power source. Supplying the high-frequency output to the switch,
In the step (f), the high frequency is changed while changing the frequency using the function so as to reduce a reflected wave from the second electrode or a phase difference between a voltage and a current output from the high frequency power source. A film forming method comprising the step of supplying the high frequency output from a power source to the switch. Evacuating the outside of the first container (a);
Evacuating the outside of the second container (b);
Supplying a first source gas to the outer surface of the first container (c);
Supplying a second source gas to the outer surface of the second container (d);
A high-frequency output of a predetermined frequency is supplied from a high-frequency power source to a switch, and a high-frequency output from the switch is supplied to a first electrode through a first fixed matching unit, and the first electrode is disposed on the first electrode. (E) forming a film on the outer surface of the first container by generating plasma of the first source gas on the outside of the first container;
After the step (e), the high-frequency output is supplied from the high-frequency power source to the switch, the high-frequency output is supplied from the switch to a second electrode through a second fixed matching unit, and the first A step (f) of forming a film on the outer surface of the second container by generating plasma of the second source gas outside the second container disposed on the second electrode;
Comprising
The switch includes a first path that electrically connects the high-frequency power source and the first fixed matching device, and a second path that electrically connects the high-frequency power source and the second fixed matching device. Has a route,
The high frequency power source has a function of varying the predetermined frequency within a range of ± 10% or less,
In the step (e), the high-frequency power source is changed while changing the frequency using the function so as to reduce a reflected wave from the first electrode or a phase difference between a voltage and a current output from the high-frequency power source. Supplying the high-frequency output to the switch,
In the step (f), the high frequency is changed while changing the frequency using the function so as to reduce a reflected wave from the second electrode or a phase difference between a voltage and a current output from the high frequency power source. A film forming method comprising the step of supplying the high frequency output from a power source to the switch. A step (a) of evacuating the inside of the first container;
A step (b) of evacuating the inside of the second container;
Supplying a first source gas into the first container (c);
Supplying a second source gas into the second container (d);
A high-frequency output of a predetermined frequency is supplied from a high-frequency power source to a fixed matching device, and the high-frequency output is supplied from the fixed matching device to a first electrode via a switch, and is arranged inside the first electrode. Forming a film in the first container by generating plasma of the first source gas in the first container (e);
After the step (e), the high-frequency output is supplied from the high-frequency power source to the fixed matching unit, the high-frequency output is supplied from the fixed matching unit to the second electrode through the switch, and the second (F) forming a film in the second container by generating a plasma of the second source gas in the second container disposed inside the electrode;
Comprising
The switch includes: a first path that electrically connects the fixed matcher and the first electrode; and a second path that electrically connects the fixed matcher and the second electrode. Have
The high frequency power source has a function of varying the predetermined frequency within a range of ± 10% or less,
The step (e) includes changing the frequency using the function so as to reduce a reflected wave from the first electrode or a phase difference between a voltage and a current output from the high-frequency power source. Supplying the high-frequency output from a power source to the fixed matching unit;
In the step (f), the high frequency is changed while changing the frequency using the function so as to reduce a reflected wave from the second electrode or a phase difference between a voltage and a current output from the high frequency power source. A film forming method comprising the step of supplying the high frequency output from a power source to the fixed matching unit. Evacuating the outside of the first container (a);
Evacuating the outside of the second container (b);
Supplying a first source gas to the outer surface of the first container (c);
Supplying a second source gas to the outer surface of the second container (d);
A high-frequency output of a predetermined frequency is supplied from a high-frequency power source to a fixed matching unit, the high-frequency output is supplied from the fixed matching unit to a first electrode via a switch, and the first electrode disposed on the first electrode (E) forming a film on the outer surface of the first container by generating plasma of the first source gas on the outside of the container;
After the step (e), the high-frequency output is supplied from the high-frequency power source to the fixed matching unit, the high-frequency output is supplied from the fixed matching unit to the second electrode through the switch, and the second A step (f) of forming a film on the outer surface of the second container by generating plasma of the second source gas on the outside of the second container disposed on the electrode;
Comprising
The switch includes: a first path that electrically connects the fixed matcher and the first electrode; and a second path that electrically connects the fixed matcher and the second electrode. Have
The high frequency power source has a function of varying the predetermined frequency within a range of ± 10% or less,
The step (e) includes changing the frequency using the function so as to reduce a reflected wave from the first electrode or a phase difference between a voltage and a current output from the high-frequency power source. Supplying the high-frequency output from a power source to the fixed matching unit;
In the step (f), the high frequency is changed while changing the frequency using the function so as to reduce a reflected wave from the second electrode or a phase difference between a voltage and a current output from the high frequency power source. A film forming method comprising the step of supplying the high frequency output from a power source to the fixed matching unit.

Images