JP2018174300A - Plasma processing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a plasma processing device capable of performing desired plasma processing on a work-piece conveyed by a rotary body in a circulation manner, corresponding to positions different in rotary body surface passage rate.SOLUTION: A plasma processing device comprises: a vacuum chamber 20; a rotary body 31; a barrel unit having, at one end, an opening arranged to extend in a direction in which the barrel unit faces a conveyance path in the vacuum chamber 20; a window unit 52 for partitioning between a gas space of the barrel unit and the outside; a supplying unit 53 for supplying processing gas G2 into the gas space; and an antenna 55 which generates inductively coupled plasma of the processing gas G2 in the gas space for plasma processing a work-piece W passing the conveyance path when electric power is applied thereto. The supplying unit 53 supplies the processing gas G2 from a plurality of positions different in time of a surface of the rotary body 31 passing a processing region to perform plasma processing, and has an adjustment part for individually adjusting a supplying amount of the processing gas G2 per unit time at the plurality of positions of the supplying unit 53 according to time of passing through the processing region.SELECTED DRAWING: Figure 3

Description

  The present invention relates to a plasma processing apparatus.

  In the manufacturing process of various products such as a semiconductor device, a liquid crystal display, and an optical disk, a thin film such as an optical film may be formed on a workpiece such as a wafer or a glass substrate. The thin film can be formed by forming a film of metal or the like on the workpiece, or performing film processing such as etching, oxidation, or nitriding on the formed film.

  Film formation or film treatment can be performed by various methods, one of which is a method using plasma. In film formation, an inert gas is introduced into a chamber in which a target is placed, and a DC voltage is applied. A plasma is formed by causing ions of an inert gas to collide with a target and depositing a material knocked out of the target on a workpiece. In film processing, a process gas is introduced into a chamber in which electrodes are arranged, and a high frequency voltage is applied to the electrodes. The membrane treatment is performed by colliding active species such as plasma process gas ions and radicals with the membrane on the workpiece.

  In order to perform such film formation and film processing continuously, a rotating table as a rotating body is attached inside one chamber, and a film forming unit and a film processing unit are arranged in the circumferential direction above the rotating table. There is a plasma processing apparatus in which a plurality of plasma processing apparatuses are arranged (for example, see Patent Document 1). In this way, the work is held on the rotary table and conveyed, and an optical film or the like is formed by passing under the film forming unit and the film processing unit.

  In a plasma processing apparatus using a rotary table, a cylindrical electrode (hereinafter referred to as “cylindrical electrode”) having an upper end closed and an opening at the lower end may be used as a film processing unit. When the cylindrical electrode is used, an opening is provided in the upper part of the chamber, and the upper end of the cylindrical electrode is attached to the opening via an insulator. The side wall of the cylindrical electrode extends into the chamber, and the opening at the lower end faces the rotary table with a slight gap. The chamber is grounded, the cylindrical electrode functions as an anode, and the chamber and turntable function as a cathode. A process gas is introduced into the cylindrical electrode and a high frequency voltage is applied to generate plasma. Electrons contained in the generated plasma flow into the turntable side which is a cathode. By passing the work held on the rotary table under the opening of the cylindrical electrode, active species such as ions and radicals generated by the plasma collide with the work to perform film processing.

Japanese Patent No. 4428873 Japanese Patent No. 3586198

  In recent years, workpieces to be processed have become larger in size, and improvement in processing efficiency has been demanded. Therefore, there is a tendency for an area for film formation and film processing by generating plasma to expand. However, when a plasma is generated by applying a voltage to the cylindrical electrode, it may be difficult to generate a wide range and high density plasma.

  Therefore, a plasma processing apparatus has been developed that can generate a relatively wide and high-density plasma to perform film processing on a large workpiece (see, for example, Patent Document 2). In such a plasma processing apparatus, the antenna is disposed outside the chamber through a window member such as a dielectric between the antenna and a gas space into which a process gas is introduced. Then, by applying a high-frequency voltage to the antenna, plasma processing is performed by generating plasma by inductive coupling in the gas space.

  Consider a case where a film processing unit using inductively coupled plasma is used as the film processing unit in the plasma processing apparatus using the rotary table as described above. In this case, in order to suppress an increase in the weight of the dielectric window, it is conceivable to make the width of the dielectric window constant in the circumferential direction of the rotary table. In connection with this, it is also conceivable that the range in which the film processing is performed in the circumferential direction of the turntable, that is, the width of the processing region is formed in parallel in the direction along the radial direction of the turntable. By the way, there is a difference in the speed of passing through the treatment area on the surface of the rotary table between the inner peripheral side and the outer peripheral side of the rotary table. That is, the passing speed within the same distance is faster on the outer peripheral side of the rotary table and slower on the inner peripheral side. When the width of the processing region is formed in parallel in the direction along the radial direction of the turntable as described above, the surface of the turntable passes through the treatment region in a shorter time on the outer peripheral side than on the inner peripheral side. It will be. For this reason, the film processing rate after processing for a certain time is small on the outer peripheral side and increased on the inner peripheral side.

  Then, for example, when a film of niobium or silicon formed in the film forming unit is oxidized or nitrided as a film process to generate a compound film, niobium or silicon is formed on the inner peripheral side and the outer peripheral side of the rotary table. The degree of oxidation or nitridation of the film is greatly different. Therefore, it is difficult to uniformly process the entire workpiece or to change the degree of processing at a desired position of the workpiece.

  This problem also occurs, for example, when a wafer such as a semiconductor as a work is arranged in a row in the circumferential direction on a rotary table and plasma processing is performed. Furthermore, from the standpoint of improving processing efficiency and the like, when a plurality of plasma processes can be performed in the radial direction, the problem becomes more prominent. Specifically, when the radius of the rotary table exceeds 1.0 m and the width of the processing area in the radial direction of the rotary table increases to reach 0.5 m, the difference in processing rate between the inner peripheral side and the outer peripheral side is very large. Will become bigger.

  An object of the present invention is to provide a plasma processing apparatus capable of performing desired plasma processing on a work circulated and conveyed by a rotating body in accordance with a position where the passing speed of the surface of the rotating body is different.

  In order to achieve the above object, a plasma processing apparatus of the present invention has a vacuum vessel capable of evacuating the interior, and a rotating body provided in the vacuum vessel and mounted with a work for rotation. A conveying unit that circulates and conveys the workpiece along a circumferential conveying path by rotating the rotating body, and a cylindrical part in which an opening at one end extends in a direction toward the conveying path inside the vacuum vessel, A window portion provided in the cylinder portion and configured to partition between a gas space into which a process gas between the inside of the cylinder portion and the rotating body is introduced and the outside of the gas space; and the process in the gas space. A supply unit for supplying a gas, and a plasma that is disposed outside the gas space and in the vicinity of the window, and is applied with electric power to process gas in the gas space to pass through the transfer path. Guidance to process An antenna for generating a combined plasma, and the supply unit supplies the process gas from a plurality of locations where the surface of the rotating body passes through a processing region where the plasma processing is performed, and the supply gas is supplied. An adjustment unit that individually adjusts the supply amount of the process gas per unit time at a plurality of locations in the unit according to the passing time.

  A plurality of supply ports provided corresponding to a plurality of locations where the supply unit supplies the process gas, and the process gas supplied from the supply port are disposed at a position facing the supply port at intervals. And a dispersion plate that is dispersed and flows into the gas space.

  The flow path of the process gas between the dispersion plate and the supply port may be closed on the rotating body side and communicated with the gas space on the window side.

  The adjusting unit may adjust the supply amount of the process gas introduced from each supply port according to a position in a direction intersecting the transport path.

  A film forming unit is provided at a position facing the work to be circulated and conveyed on the conveying path, and deposits a film forming material on the work by sputtering to form a film, and the film deposited on the work by the film forming unit. A film treatment using the inductively coupled plasma may be performed on the film of the film material.

  The supply port corresponds to a region where the film forming unit forms a film, and is provided in an annular film forming region along the transfer path, and is also provided outside the film forming region. The supply port provided outside may be excluded from an adjustment target of the supply amount of the process gas by the adjustment unit.

  The supply port may be disposed at a position facing each other across the gas space and in a direction along the transport path.

  The adjustment unit may adjust the supply amount of the process gas introduced from each gas introduction port according to the film thickness formed on the workpiece and the passing time.

  ADVANTAGE OF THE INVENTION According to this invention, a desired plasma process can be performed with respect to the workpiece | work conveyed by the rotary body according to the position from which the passage speed of the surface of a rotary body differs.

It is a see-through | perspective perspective view of the film-forming apparatus of embodiment. It is a perspective top view of the film-forming apparatus of embodiment. It is the sectional view on the AA line of FIG. FIG. 3 is a sectional view taken along line B-B in FIG. 2. It is an enlarged view which shows the detail of the A section of FIG. It is a disassembled perspective view which shows the processing unit of embodiment. It is a see-through plan view showing a processing unit of an embodiment. It is a schematic diagram which shows the flow path of a process gas. It is a perspective view which shows the antenna of embodiment. It is a block diagram which shows the structure of the control apparatus of embodiment. It is a graph which shows the test result of a comparative example and an Example.

Embodiments of the present invention (hereinafter referred to as the present embodiments) will be specifically described with reference to the drawings.
[Overview]
A plasma processing apparatus 100 shown in FIG. 1 is an apparatus that forms a compound film on the surface of each workpiece W using plasma. In other words, as shown in FIGS. 1 to 3, in the plasma processing apparatus 100, when the rotating body 31 rotates, the workpiece W on the tray 34 held by the holding unit 33 moves along a circumferential locus. By this movement, the workpiece W repeatedly passes through a position facing the film forming unit 40A, 40B, or 40C. For each passage, the particles of the targets 41A to 41C are attached to the surface of the workpiece W by sputtering. Further, the workpiece W repeatedly passes through a position facing the film processing unit 50A or 50B. Each time this passes, the particles adhering to the surface of the workpiece W combine with the substance in the introduced process gas G2 to form a compound film.

[Constitution]
As shown in FIGS. 1 to 3, such a plasma processing apparatus 100 includes a vacuum vessel 20, a transport unit 30, film forming units 40 </ b> A, 40 </ b> B, 40 </ b> C, film processing units 50 </ b> A, 50 </ b> B, a load lock unit 60, and a control device. 70.

[Vacuum container]
The vacuum vessel 20 is a so-called chamber that can be evacuated. The vacuum chamber 20 has a vacuum chamber 21 formed therein. The vacuum chamber 21 is a cylindrical sealed space formed by being surrounded by the ceiling 20a, the inner bottom surface 20b, and the inner peripheral surface 20c inside the vacuum vessel 20. The vacuum chamber 21 is airtight and can be evacuated by reduced pressure. The ceiling 20a of the vacuum container 20 is configured to be openable and closable.

  A reactive gas G is introduced into a predetermined region inside the vacuum chamber 21. The reactive gas G includes a sputtering gas G1 for film formation and a process gas G2 for film processing (see FIG. 3). In the following description, when the sputtering gas G1 and the process gas G2 are not distinguished, they may be referred to as reaction gases G. The sputtering gas G <b> 1 is a gas for causing the generated ions to collide with the targets 41 </ b> A to 41 </ b> C by plasma generated by applying electric power and depositing the material of the targets 41 </ b> A to 41 </ b> C on the surface of the workpiece W. For example, an inert gas such as argon gas can be used as the sputtering gas G1.

The process gas G2 is a gas for forming a compound film by allowing active species generated by plasma generated by inductive coupling to permeate the film deposited on the surface of the workpiece W. Hereinafter, such a surface treatment using plasma and not using the targets 41A to 41C may be referred to as reverse sputtering. The process gas G2 can be changed as appropriate according to the purpose of processing. For example, when oxynitriding a film, a mixed gas of oxygen O ₂ and nitrogen N ₂ is used.

  As shown in FIG. 3, the vacuum container 20 has an exhaust port 22 and an introduction port 24. The exhaust port 22 is an opening for performing the exhaust E while ensuring the gas flow between the vacuum chamber 21 and the outside. The exhaust port 22 is formed at the bottom of the vacuum vessel 20, for example. An exhaust unit 23 is connected to the exhaust port 22. The exhaust part 23 has piping, a pump, a valve (not shown), and the like. The inside of the vacuum chamber 21 is depressurized by the exhaust processing by the exhaust unit 23.

  The introduction port 24 is an opening for introducing the sputtering gas G1 into each of the film forming units 40A, 40B, and 40C. For example, the introduction port 24 is provided in an upper portion of the vacuum container 20. A gas supply unit 25 is connected to the introduction port 24. The gas supply unit 25 includes a gas supply source of a reaction gas G (not shown), a pump, a valve, and the like in addition to piping. The gas supply unit 25 introduces the sputtering gas G 1 into the vacuum chamber 21 from the introduction port 24. As will be described later, an opening 21a into which the film processing units 50A and 50B are inserted is provided in the upper part of the vacuum vessel 20.

[Transport section]
An outline of the transport unit 30 will be described. The transport unit 30 includes a rotating body 31 provided in the vacuum container 20. The rotating body 31 carries a workpiece W. The conveyance unit 30 is a device that circulates and conveys the workpiece W along a circumferential conveyance path T by rotating the rotating body 31. Circulating conveyance refers to repetitively moving the workpiece W in a circular path. The conveyance path T is a trajectory along which the workpiece W or a tray 34 described later moves by the conveyance unit 30 and is a donut-shaped annular ring. Hereinafter, details of the conveyance unit 30 will be described.

  The rotary body 31 is a circular plate-shaped rotary table. The rotating body 31 may be formed by spraying aluminum oxide on the surface of a plate member made of stainless steel, for example. Hereinafter, the simple term “circumferential direction” means “the circumferential direction of the rotating body 31”, and the simple term “radial direction” means “the radial direction of the rotating body 31”. In the present embodiment, a flat substrate is used as an example of the workpiece W, but the type, shape, and material of the workpiece W to be subjected to plasma processing are not limited to specific ones. For example, you may use the curved board | substrate which has a recessed part or a convex part in the center. Further, a material including a conductive material such as metal or carbon, a material including an insulator such as glass or rubber, or a material including a semiconductor such as silicon may be used. Further, the number of workpieces W to be subjected to plasma processing is not limited to a specific number.

  The transport unit 30 includes a motor 32 and a holding unit 33 in addition to the rotating body 31. The motor 32 is a driving source that applies a driving force to the rotating body 31 and rotates it about the center of a circle. The holding unit 33 is a component that holds the tray 34 that is conveyed by the conveyance unit 30. On the surface of the rotating body 31, a plurality of holding portions 33 are arranged at circumferentially equidistant positions. The surface of the rotator 31 in the present embodiment is a surface that faces upward when the rotator 31 is in the horizontal direction, that is, a top surface. For example, the region where each holding portion 33 holds the tray 34 is formed in a direction parallel to the tangent to the circumferential circle of the rotator 31 and is provided at equal intervals in the circumferential direction. More specifically, the holding unit 33 is a groove, a hole, a protrusion, a jig, a holder, or the like that holds the tray 34, and can be configured by a mechanical chuck, an adhesive chuck, or the like.

  The tray 34 is a member having a flat placement surface on which the work W is mounted on one of the rectangular flat plates. The material of the tray 34 is preferably a material having high thermal conductivity, for example, metal. In the present embodiment, the material of the tray 34 is SUS. The material of the tray 34 may be, for example, ceramics or resin having good thermal conductivity, or a composite material thereof. The workpiece W may be directly mounted on the mounting surface of the tray 34, or may be indirectly mounted via a frame or the like having an adhesive sheet. A single workpiece W may be mounted for each tray 34, or a plurality of workpieces W may be mounted.

  In the present embodiment, since six holding portions 33 are provided, six trays 34 are held on the rotating body 31 at intervals of 60 °. However, the holding part 33 may be one or plural. The rotating body 31 circulates and conveys the tray 34 on which the workpiece W is mounted, and repeatedly passes the positions facing the film forming units 40A, 40B, and 40C and the film processing units 50A and 50B.

[Deposition unit]
The film forming units 40A, 40B, and 40C are processing units that are provided at positions facing the work W that is circulated and transported through the transport path T, and deposit a film forming material on the work W by sputtering to form a film. Hereinafter, when the plurality of film forming units 40A, 40B, and 40C are not distinguished, the film forming unit 40 will be described. As illustrated in FIG. 3, the film forming unit 40 includes a sputtering source 4, a partitioning unit 44, and a power supply unit 6.

(Sputter source)
The sputtering source 4 is a supply source of a film forming material for forming a film by depositing a film forming material on the workpiece W by sputtering. As shown in FIGS. 2 and 3, the sputtering source 4 includes targets 41 </ b> A, 41 </ b> B, 41 </ b> C, a backing plate 42, and an electrode 43. The targets 41 </ b> A, 41 </ b> B, and 41 </ b> C are formed of a film forming material that is deposited on the workpiece W to be a film, and are disposed at positions facing the transport path T apart.

  In the present embodiment, the three targets 41A, 41B, and 41C are provided at positions aligned on the vertices of the triangle in plan view. The targets 41A, 41B, and 41C are arranged in this order from the rotation center of the rotating body 31 toward the outer periphery. Hereinafter, when the targets 41A, 41B, and 41C are not distinguished, the target 41 will be described. The surface of the target 41 faces the workpiece W moved by the transport unit 30 with a distance. Note that the area where the film forming material can be adhered by the three targets 41A, 41B, and 41C is larger than the size of the tray 34 in the radial direction. In this way, an annular region along the transfer path T corresponding to the region where the film forming unit 40 forms a film is defined as a film forming region F (indicated by a dotted line in FIG. 2). The width in the radial direction of the film formation region F is longer than the width of the tray 34 in the radial direction. In the present embodiment, the three targets 41 </ b> A to 41 </ b> C are arranged so that the film forming material can be adhered without gaps over the entire width in the radial direction of the film forming region F.

  For example, niobium or silicon is used as the film forming material. However, various materials can be used as long as the materials are formed by sputtering. Further, the target 41 has, for example, a cylindrical shape. However, other shapes such as a long cylindrical shape and a prismatic shape may be used.

  The backing plate 42 is a member that individually holds the targets 41A, 41B, and 41C. The electrode 43 is a conductive member for individually applying power to each of the targets 41A, 41B, and 41C from the outside of the vacuum vessel 20. The electric power applied to each target 41A, 41B, 41C can be changed individually. The sputter source 4 is appropriately provided with a magnet, a cooling mechanism, etc. as necessary.

(Separator)
The delimiter 44 is a member that partitions film forming positions M2, M4, and M5 where the workpiece W is formed by the sputtering source 4 and film processing positions M1 and M3 that perform film processing. As shown in FIG. 2, the delimiter 44 is a rectangular wall plate arranged radially from the rotation center of the rotating body 31 of the transport unit 30. For example, as shown in FIG. 1, the partition unit 44 is provided between the film processing unit 50A, the film forming unit 40A, the film processing unit 50B, the film forming unit 40B, and the film forming unit 40C of the ceiling 20a of the vacuum chamber 21. ing. The lower end of the partitioning portion 44 faces the rotating body 31 with a gap through which the workpiece W passes. The presence of the partitioning portion 44 can suppress the diffusion of the reaction gas G and the film forming material at the film forming positions M2, M4, and M5 into the vacuum chamber 21.

  A range in the horizontal direction of the film forming positions M2, M4, and M5 is an area partitioned by the pair of partitioning portions 44. The workpiece W circulated and conveyed by the rotating body 31 repeatedly passes through the positions facing the targets 41 at the deposition positions M2, M4, and M5, so that the deposition material is deposited on the surface of the workpiece W as a film. These film formation positions M2, M4, and M5 are areas where most of the film formation is performed, but even if the film is out of this area, there is a leakage of film formation material, so there is no film deposition at all. . That is, the area where film formation is performed is an area slightly wider than the film formation positions M2, M4, and M5.

(Power supply part)
The power supply unit 6 is a component that applies power to the target 41. When power is applied to the target 41 by the power supply unit 6, a sputtered gas G1 that is turned into plasma is generated. Then, the ions generated by the plasma collide with the target, so that the film forming material knocked out of the target can be deposited on the workpiece W. The electric power applied to each target 41A, 41B, 41C can be changed individually. In the present embodiment, the power supply unit 6 is, for example, a DC power supply that applies a high voltage. In the case of an apparatus that performs high-frequency sputtering, an RF power source may be used. Further, the power supply unit 6 may be provided for each of the film forming units 40A, 40B, and 40C, or only one power supply unit 6 may be provided for the plurality of film forming units 40A, 40B, and 40C. When only one power supply unit 6 is provided, the power application is switched and used. The rotating body 31 has the same potential as the grounded vacuum container 20 and generates a potential difference by applying a high voltage to the target 41 side.

  The plurality of film forming units 40A, 40B, and 40C can increase the film formation amount within a predetermined time, that is, the film formation rate, by simultaneously forming a film using the same film forming material. In addition, the film forming units 40A, 40B, and 40C can form a film composed of a plurality of layers of film forming materials by using different types of film forming materials.

  In the present embodiment, as shown in FIG. 2, three film forming units 40A, 40B, and 40C are disposed between the film processing units 50A and 50B in the transport direction of the transport path T. The film forming positions M2, M4, and M5 correspond to the three film forming units 40A, 40B, and 40C. The film processing positions M1 and M3 correspond to the two film processing units 50A and 50B.

[Membrane treatment part]
The film processing units 50 </ b> A and 50 </ b> B are processing units that perform film processing on the material deposited on the workpiece W conveyed by the conveyance unit 30. This film treatment is reverse sputtering without using the target 41. Hereinafter, the film processing units 50A and 50B will be described as the film processing unit 50 when they are not distinguished. The film processing unit 50 includes a processing unit 5. A configuration example of the processing unit 5 will be described with reference to FIGS.

  As shown in FIGS. 3 and 4, the processing unit 5 includes a cylinder part H, a window part 52, a supply part 53, an adjustment part 54 (see FIG. 8), and an antenna 55. The cylindrical portion H is a cylindrical component in which an opening Hо at one end extends in a direction toward the transport path T inside the vacuum vessel 20. The cylinder part H includes a cylindrical body 51, a cooling part 56, and a dispersion part 57. Among the members constituting the cylindrical portion H, the cylindrical body 51 will be described first, and the cooling portion 56 and the dispersing portion 57 will be described later. The cylindrical body 51 is a cylinder whose horizontal section is a rounded rectangular shape. Here, the rounded rectangular shape is a track shape in track and field events. The track shape is a shape in which a pair of partial circles are opposed to each other with the convex side being opposed to each other and both ends are connected by parallel straight lines. The cylindrical body 51 is made of the same material as that of the rotating body 31. The cylindrical body 51 is inserted into the opening 21a provided in the ceiling 20a of the vacuum vessel 20 so that the opening 51a is spaced from the rotating body 31 side. Thereby, most of the side wall of the cylindrical body 51 is accommodated in the vacuum chamber 21. The cylindrical body 51 is arranged so that its major axis is parallel to the radial direction of the rotating body 31. It is not necessary to be strictly parallel, and there may be some inclination. Further, the processing region, which is a region where the plasma processing, that is, the film processing is performed, has a rounded rectangular shape similar to the opening 51 a of the cylindrical body 51. That is, the width of the processing region in the rotation direction is the same in the radial direction.

  As shown in FIGS. 4 and 5, an inner flange 511 is formed at one end of the cylindrical body 51 over the entire circumference. The inner flange 511 is a thick portion in which the inner edge of one end of the cylindrical body 51 protrudes over the entire circumference so that the vertical cross section orthogonal to the outer circumference is L-shaped. The innermost edge of the inner flange 511 is a rounded rectangular opening 51 a substantially similar to the cross section of the cylindrical body 51. The inner flange 511 has a stepped shape by having shelf surfaces 511a, 511b, and 511c that become lower from the inner wall of the cylindrical body 51 toward the opening 51a.

  As shown in FIGS. 7 and 8, the inner flange 511 is formed with a plurality of supply ports 512 </ b> A to D and 512 a to d. Hereinafter, when the supply ports 512A to 512D and 512a to d are not distinguished, the supply ports 512 will be described. The supply port 512 is a hole for supplying the process gas G <b> 2 into the cylindrical body 51 as shown in FIGS. 4 and 5. Each supply port 512 penetrates from the shelf surface 511a to the opening 51a so as to be L-shaped as shown in FIG.

  Here, when the center side (inner peripheral side) and the outer peripheral side of the rotating body 31 of the work W mounted on the rotating body 31 are compared, a difference occurs in the speed of passing a certain distance. That is, in this embodiment, the cylindrical body 51 is disposed so that the major axis is parallel to the radial direction of the rotating body 31. Moreover, the straight portions of the opening 51a in which the plurality of supply ports 512 are formed are parallel to each other in the radial direction. In the case of such a configuration, the time for the workpiece W to pass a certain distance below the cylindrical body 51 is shorter on the outer peripheral side than on the inner peripheral side in the rotating body 31. For this reason, the plurality of supply ports 512 are provided at a plurality of locations where the surface of the rotating body 31 has different times for passing through the processing region where the plasma processing is performed. The direction in which the plurality of supply ports 512 are arranged in parallel intersects the transport path T. Furthermore, the supply port 512 is arrange | positioned in the position which opposes on both sides of the gas space R. The arrangement direction of the supply ports 512 facing each other across the gas space R is along the transport path T.

More specifically, as shown in FIG. 8, the supply ports 512 </ b> A to 512 </ b> D are arranged in the longitudinal direction of the cylindrical body 51,
That is, they are juxtaposed at equal intervals along one inner wall in the long diameter direction. Further, the supply ports 512a to 512d are arranged in parallel at equal intervals along the other inner wall of the cylindrical body 51 in the longitudinal direction. The supply ports 512A to 512D are arranged in the order of the supply port 512A, the supply port 512B, the supply port 512C, and the supply port 512D from the inner peripheral side toward the outer peripheral side. Similarly, the supply ports 512a to 512d are arranged in the order of the supply port 512a, the supply port 512b, the supply port 512c, and the supply port 512d. The supply ports 512 </ b> A to 512 </ b> D are arranged on the downstream side of the conveyance path T, and the supply ports 512 a to 512 d are arranged on the upstream side of the conveyance path T. The supply port 512A and the supply port 512a, the supply port 512B and the supply port 512b, the supply port 512C and the supply port 512c, and the supply port 512D and the supply port 512d are opposed to each other on the downstream side and the upstream side.

  Furthermore, as shown in FIG. 4, an outer flange 51b is formed at the end of the cylindrical body 51 opposite to the opening 51a. Between the lower surface of the outer flange 51b and the top surface of the vacuum vessel 20, an O-ring 21b is disposed over the entire circumference, and the opening 21a is hermetically sealed.

  The window part 52 is a member that is provided in the cylinder part H and partitions the gas space R into which the process gas G2 in the vacuum vessel 20 is introduced and the outside. In the present embodiment, the window portion 52 is provided in the cylindrical body 51 that constitutes the cylindrical portion H. The gas space R is a space formed between the rotating body 31 and the inside of the cylindrical portion H in the film processing unit 50, and the workpiece W circulated and conveyed by the rotating body 31 repeatedly passes through the gas space R. The window 52 is a dielectric flat plate that fits inside the cylindrical body 51 and is substantially similar to the horizontal cross section of the cylindrical body 51. The window 52 is placed on an O-ring 21b fitted in a groove formed in a circumferential shape on the shelf surface 511b, and hermetically seals the opening 51a. Note that the window 52 may be a dielectric such as alumina or a semiconductor such as silicon.

  The supply unit 53 supplies a process gas G2 to the gas space R as shown in FIGS. The supply unit 53 is a device that supplies the process gas G2 from a plurality of locations where the surface of the rotator 31 passes through the processing region at different times. The plurality of locations correspond to the arrangement positions of the supply ports 512 in the longitudinal direction of the cylindrical body 51. Specifically, the supply unit 53 includes a supply source of process gas G2 such as a cylinder (not shown) and pipes 53a, 53b, and 53c connected thereto. The process gas G2 is, for example, oxygen and nitrogen. The pipes 53a are a pair of paths from the supply sources of the respective process gases G2. That is, it consists of a path connected to an oxygen supply source and a path connected to a nitrogen supply source. Four sets of the pipes 53a are provided corresponding to the arrangement positions of the supply ports 512. The pipe 53b is one path to which the pipe 53a that is a pair of paths is connected. Each piping 53b is connected to each of the supply ports 512A to 512D in one row. Moreover, the piping 53c branched from each piping 53b is each connected to each supply port 512a-d of the other row | line | column.

  The leading ends of the branched pipes 53 c extend from the outer flange 51 b side to the opening 51 a side along the inner wall of the cylindrical body 51, and are connected to the end portion of the supply port 512 on the shelf surface 511 a side. Similarly, the pipe 53b is connected to the end of the supply port 512 on the shelf surface 511a side. Thereby, the supply part 53 is process gas G2 to the gas space R from the several location from which the speed | rate to which the workpiece | work W passes differs via supply port 512A-D and supply port 512a-d arranged in parallel as mentioned above. Supply. That is, the supply ports 512A to 512D and the supply ports 512a to 512d are provided corresponding to a plurality of locations where the supply unit 53 supplies the process gas G2. In the present embodiment, the innermost supply ports 512A and 512a and the outermost supply ports 512D and 512d are located outside the film formation region F.

  As shown in FIG. 8, the adjusting unit 54 adjusts the supply amount of the process gas G <b> 2 introduced from each supply port 512 according to the position in the direction intersecting the transport path T. That is, the adjustment unit 54 individually adjusts the supply amount of the process gas G2 per unit time at a plurality of locations in the supply unit 53 according to the time during which the surface of the rotating body 31 passes through the processing region. The adjusting unit 54 includes a mass flow controller (MFC) 54a provided in each of the pair of paths of the pipe 53a. The MFC 54a is a member having a mass flow meter that measures the flow rate of a fluid and an electromagnetic valve that controls the flow rate.

  The antenna 55 is a member that generates inductively coupled plasma for processing the workpiece W passing through the transfer path T, as shown in FIGS. 4, 7, and 9. The antenna 55 is disposed outside the gas space R and in the vicinity of the window portion 52. When electric power is applied to the antenna 55, an electric field induced by a magnetic field generated by the antenna current is generated, and the process gas G2 in the gas space R is turned into plasma. The distribution shape of the inductively coupled plasma generated can be changed depending on the shape of the antenna 55. In other words, the distribution shape of the inductively coupled plasma can be determined by the shape of the antenna 55. In the present embodiment, by forming the antenna 55 into the shape shown below, inductively coupled plasma having a shape substantially similar to the horizontal cross section of the gas space R can be generated.

  The antenna 55 includes a plurality of conductors 551a to 551d and a capacitor 552. Each of the plurality of conductors 551 is a strip-like conductive member, and is connected to each other via a capacitor 552 to form a rounded rectangular electric circuit when viewed from the plane direction. The outer shape of the antenna 55 is smaller than the opening 51a.

  Each capacitor 552 has a substantially cylindrical shape, and is connected in series between the conductors 551a, 551b, 551c, and 551d. If the antenna 55 is composed only of a conductor, the voltage amplitude becomes excessive at the end portion on the power source side, and the window portion 52 is locally cut. Therefore, by dividing the conductor and connecting the capacitor 552, a small voltage amplitude is generated at the ends of the conductors 551a, 551b, 551c, and 551d, so that the window 52 is prevented from being scraped.

  However, in the capacitor 552 portion, the continuity of the conductors 551a, 551b, 551c, and 551d is cut, and the plasma density is lowered. Therefore, the end portions of the conductors 551a, 551b, 551c, and 551d facing the window portion 52 are configured to overlap each other in the planar direction so as to sandwich the capacitor 552 from above and below. More specifically, the connection ends of the conductors 551a, 551b, 551c, and 551d with respect to the capacitor 552 are bent so that the cross section has an inverted L shape as shown in FIG. The horizontal plane at the end of the adjacent conductors 551a and 551b is provided with a gap for sandwiching the capacitor 552 from above and below. Similarly, gaps that sandwich the capacitor 552 from above and below are provided on the horizontal surfaces of the ends of the conductors 551b and 551c and the horizontal surfaces of the ends of the conductors 551c and 551d, respectively.

  An RF power supply 55a for applying high frequency power is connected to the antenna 55. A matching box 55b, which is a matching circuit, is connected in series to the output side of the RF power supply 55a. For example, one end of the conductor 551d and the RF power supply 55a are connected. In this example, the conductor 551a is the ground side. A matching box 55b is connected between the RF power supply 55a and one end of the conductor 551d. The matching box 55b stabilizes the plasma discharge by matching the impedance on the input side and the output side.

  As shown in FIGS. 4 to 6, the cooling unit 56 is a rounded rectangular tubular member having substantially the same size as the tubular body 51, and the upper surface thereof is in contact with the bottom surface of the tubular body 51. Are provided at the matching positions. Although not shown, a cavity through which cooling water flows is provided inside the cooling unit 56. A supply port connected to a chiller, which is a cooling water circulation device that circulates and supplies cooling water, and a drain port communicate with the cavity. The cooling water cooled by the chiller is supplied from the supply port, circulates in the cavity, and is discharged from the drain port, whereby the cooling unit 56 is cooled and the cylindrical body 51 and the dispersion unit 57 are heated. Is suppressed.

  The dispersing portion 57 is a rounded rectangular tubular member having substantially the same size as the cylindrical body 51 and the cooling portion 56, and is provided at a position where the upper surface is in contact with and coincides with the bottom surface of the cooling portion 56. An opening Hо of the cylindrical portion H is provided on the bottom surface. The dispersion part 57 is provided with a dispersion plate 57a. The dispersion plate 57 a is spaced from the supply port 512 and is disposed at a position facing the supply port 512. The dispersion plate 57 a disperses the process gas G 2 introduced from the supply port 512 and flows it into the gas space R. Since the dispersion plate 57 a is provided on the inner side, the horizontal width of the annular portion of the dispersion portion 57 is larger than that of the cylindrical body 51.

  More specifically, the dispersion plate 57 a is raised over the entire periphery from the inner edge of the dispersion part 57, extends beyond the cooling part 56 to a position close to the bottom surface of the window part 52. As shown in FIG. 5, the flow path of the process gas G2 between the dispersion plate 57a and the supply port 512 is closed on the rotating body 31 side and communicated with the gas space R on the window 52 side. In other words, an annular gap is formed between the inner flange 511 and the dispersion plate 57 a so that the upper side communicates with the gas space R below the window part 52 along the lower surface of the window part 52.

  Note that the vertical interval between the bottom surface of the dispersing portion 57 and the surface of the rotating body 31 has a length that allows the workpiece W to pass through the transport path T. Further, since the dispersion plate 57a enters the gas space R in the cylindrical body 51, the plasma generation region in the gas space R is a space inside the dispersion plate 57a. The distance between the dispersion plate 57a and the window portion 52 is, for example, 1 mm to 5 mm. When this distance is 5 mm or less, abnormal discharge can be prevented from occurring in the gap.

  The process gas G2 is introduced into the gas space R from the supply unit 53 through the supply port 512, and a high frequency voltage is applied to the antenna 55 from the RF power source 55a. Then, an electric field is generated in the gas space R through the window 52, and the process gas G2 is turned into plasma. Thereby, active species such as electrons, ions and radicals are generated.

[Load lock section]
In a state where the vacuum in the vacuum chamber 21 is maintained, the load lock unit 60 carries the tray 34 loaded with the unprocessed workpiece W from the outside into the vacuum chamber 21 by a transfer means (not shown), and the processed workpiece W is loaded. This is a device for carrying the mounted tray 34 out of the vacuum chamber 21. Since the load lock unit 60 can be of a known structure, description thereof is omitted.

[Control device]
The control device 70 is a device that controls each part of the plasma processing apparatus 100. The control device 70 can be configured by, for example, a dedicated electronic circuit or a computer that operates with a predetermined program. In other words, the control contents are programmed with respect to the control related to the introduction and exhaust of the sputtering gas G1 and the process gas G2 into the vacuum chamber 21, the control of the power supply unit 6 and the RF power supply 55a, the control of the rotation of the rotating body 31, and the like. . In the control device 70, this program is executed by a processing device such as a PLC or a CPU, and can cope with various types of plasma processing specifications.

  Specific objects to be controlled are as follows. That is, the rotational speed of the motor 32, the initial exhaust pressure of the plasma processing apparatus 100, the selection of the sputtering source 4, the power applied to the target 41 and the antenna 55, the flow rates, types, introduction time and exhaust time of the sputtering gas G1 and process gas G2. , Film formation time and film processing time.

  In particular, in the present embodiment, the control device 70 controls the deposition rate by controlling the application of electric power to the target 41 of the deposition unit 40 and the supply amount of the sputtering gas G1 from the gas supply unit 25. Further, the control device 70 controls the film processing rate by controlling the application of electric power to the antenna 55 and the supply amount of the process gas G2 from the supply unit 53.

  The configuration of the control device 70 for executing the operation of each unit as described above will be described with reference to FIG. 10 which is a virtual functional block diagram. That is, the control device 70 includes a mechanism control unit 71, a power supply control unit 72, a gas control unit 73, a storage unit 74, a setting unit 75, and an input / output control unit 76.

  The mechanism control unit 71 is a processing unit that controls a drive source such as the exhaust unit 23, the gas supply unit 25, the supply unit 53, the adjustment unit 54, the motor 32, the load lock unit 60, an electromagnetic valve, a switch, and a power source. The power supply control unit 72 is a processing unit that controls the power supply unit 6 and the RF power supply 55a. For example, the power controller 72 individually controls the power applied to the targets 41A, 41B, and 41C. When it is desired to make the film formation rate uniform over the entire work W, the power is sequentially increased so that the speed difference between the inner peripheral side and the outer peripheral side is taken into consideration, such that target 41A <target 41B <target 41C. That is, the power may be determined in proportion to the speeds on the inner and outer peripheral sides. However, the proportional control is an example, and the power may be set higher as the speed increases, and the processing rate may be set to be uniform. Moreover, what is necessary is just to raise the applied electric power to the target 41 about the location which wants to thicken the film thickness formed in the workpiece | work W, and lower the applied electric power to the target 41 about the location which wants to make thin film thickness.

  The gas control unit 73 is a processing unit that controls the amount of process gas G2 introduced by the adjusting unit 54. For example, the supply amount per unit time of the process gas G2 from each supply port 512 is individually controlled. When it is desired to make the film processing rate uniform throughout the workpiece W, the supply amount from each supply port 512 is changed from the inner peripheral side to the outer peripheral side in consideration of the speed difference between the inner peripheral side and the outer peripheral side. Increase in order. Specifically, the supply amount is set as supply port 512A <supply port 512B <supply port 512C <supply port 512D, supply port 512a <supply port 512b <supply port 512c <supply port 512d. That is, the supply amount may be determined in proportion to the speed on the inner peripheral side and the outer peripheral side. Further, the supply amount of the process gas G2 supplied from each supply port 512 is adjusted according to the film thickness formed on the workpiece W. That is, the supply amount of the process gas G2 is increased so that the amount of film processing is increased at the portion where the film thickness is increased. And about the location which makes a film thickness thin, the supply amount of process gas G2 is decreased so that the amount of film processing may decrease. Further, for example, in the case of film processing for a film formed such that the film thickness is increased toward the inner peripheral side, the supply amount of the process gas G2 can be set to increase toward the inner peripheral side. Thereby, in combination with the above-described relationship with the speed, the supply amount from each supply port 512 may be uniform as a result. That is, the adjustment unit 54 may adjust the supply amount of the process gas G2 supplied from each supply port 512 according to the film thickness formed on the workpiece W and the time for which the rotating body 31 passes through the processing region. The gas control unit 73 also controls the introduction amount of the sputtering gas G1.

  The storage unit 74 is a component that stores information necessary for the control of the present embodiment. Information stored in the storage unit 74 includes the exhaust amount of the exhaust unit 23, the power applied to each target 41, the supply amount of the sputtering gas G1, the power applied to the antenna 55, and the supply of the process gas G2 for each supply port 512. Including quantity. The setting unit 75 is a processing unit that sets information input from the outside in the storage unit 74. The electric power applied to the antenna 55 is determined by, for example, a desired film thickness that is formed while the rotator 31 rotates once and the rotation speed (rpm) of the rotator 31.

  Furthermore, the power applied to the targets 41A, 41B, and 41C and the supply amount of the process gas G2 from the supply ports 512A to 512A and 512a to d may be linked. That is, when the rotation speed (rpm) of the rotating body 31 is constant and the power applied to the targets 41A, 41B, and 41C is set by the setting unit, the supply ports 512A to 512A and 512a to d are proportionally proportional thereto. May be set. Further, when the rotation speed (rpm) of the rotating body 31 is constant and the supply amount from each of the supply ports 512A to 512D and 512a to d is set by the setting unit, each of the targets 41A, 41B, and 41C is proportionally proportional thereto. The power to be applied may be set.

Such a setting can be performed as follows, for example. First, the relationship between the film thickness and the applied power or the supply amount of the process gas G2 corresponding to the film thickness, and the relationship between the applied power and the supply amount of the process gas G2 corresponding thereto are obtained in advance by experiments or the like. Then, at least one of these is tabulated and stored in the storage unit 74. Then, according to the input film thickness, applied power, or supply amount, the setting unit 75 determines the applied power and supply amount with reference to the table.

  The input / output control unit 76 is an interface for controlling signal conversion and input / output with each unit to be controlled. Further, an input device 77 and an output device 78 are connected to the control device 70. The input device 77 is input means such as a switch, a touch panel, a keyboard, and a mouse for an operator to operate the plasma processing apparatus 100 via the control device 70. For example, the selection of the film forming unit 40 to be used, the film processing unit 50, the desired film thickness, the applied power of each of the targets 41A to 41C, the supply amount of the process gas G2 from each of the supply ports 512A to 512, 512a to d, etc. It can be input by input means.

  The output device 78 is an output means such as a display, a lamp, and a meter that makes information for confirming the state of the device visible to the operator. For example, the output device 78 can display an information input screen from the input device 77. In this case, the targets 41 </ b> A, 41 </ b> B, 41 </ b> C and the supply ports 512 </ b> A to 512 </ b> D, 512 a to d may be displayed in a schematic diagram so that each position can be selected and a numerical value can be input. Furthermore, the targets 41A, 41B, and 41C and the supply ports 512A to 512D and 512a to d may be displayed in a schematic diagram, and the values set for each may be displayed numerically.

[Operation]
The operation of the present embodiment as described above will be described below with reference to FIGS. Although not shown in the figure, the tray 34 loaded with the workpieces W is carried into the plasma processing apparatus 100 by a conveying means such as a conveyor or a robot arm.

  The plurality of trays 34 are sequentially carried into the vacuum container 20 by the conveying means of the load lock unit 60. The rotating body 31 sequentially moves the empty holding unit 33 to the place where the load lock unit 60 carries in. The holding unit 33 individually holds the trays 34 carried in by the conveying unit. In this way, as shown in FIGS. 2 and 3, all the trays 34 on which the workpieces W to be deposited are mounted are placed on the rotating body 31.

  As described above, the film forming process for the workpiece W introduced into the plasma processing apparatus 100 is performed as follows. The following operations are examples in which film formation and film processing are performed by operating one of the film formation unit 40 and the film processing unit 50, such as only the film formation unit 40A and only the film processing unit 50A. is there. However, a plurality of sets of film forming units 40 and film processing units 50 may be operated to increase the processing rate. An example of film formation and film processing by the film forming unit 40 and the film processing unit 50 is a process of forming a silicon oxynitride film. The formation of the silicon oxynitride film is performed by repeating the process of permeating oxygen ions and nitrogen ions while circulating the work W every time silicon is attached to the work W at the atomic level.

First, the vacuum chamber 21 is always evacuated and decompressed by the exhaust part 23. When the vacuum chamber 21 reaches a predetermined pressure, the rotating body 31 rotates as shown in FIGS. Accordingly, the workpiece W held by the holding unit 33 moves along the transport path T and passes under the film forming units 40A, 40B, and 40C and the film processing units 50A and 50B. When the rotating body 31 reaches a predetermined rotation speed, the gas supply unit 25 of the film forming unit 40 supplies the sputtering gas G1 around the target 41. At this time, the supply unit 53 of the film processing unit 50 also supplies the process gas G2 to the gas space R.

  In the film forming unit 40, the power supply unit 6 applies power to the targets 41A, 41B, and 41C. Thereby, the sputtering gas G1 is turned into plasma. In the sputtering source 4, active species such as ions generated by the plasma collide with the target 41 to fly particles of the film forming material. For this reason, film | membrane of the film-forming material is deposited on the surface of the workpiece | work W which passes the film-forming part 40 for every passage, and a film | membrane is produced | generated. In this example, a silicon layer is formed.

The power applied to each of the targets 41A, 41B, and 41C by the power supply unit 6 is set in the storage unit 74 so as to increase sequentially from the inner peripheral side to the outer peripheral side of the rotating body 31. In accordance with the power set in the storage unit 74, the power source control unit 72 determines that the power source unit 6
An instruction is output to control the power applied to 1. Because of this control, the film formation amount per unit time by sputtering increases as it goes from the inner circumference side to the outer circumference side, but the passing speed of the rotating body 31 increases as it goes from the inner circumference side to the outer circumference side. As a result, the entire film thickness of the workpiece W is uniform.

  Even if the workpiece W passes through the film forming unit 40 and the film processing unit 50 that are not in operation, the workpiece W is not heated because it is not subjected to film formation or film processing. In this unheated region, the workpiece W releases heat. The film forming unit 40 that is not operating is, for example, film forming positions M4 and M5. The film processing unit 50 that is not operating is, for example, the film processing position M3.

  On the other hand, the deposited workpiece W passes through a position facing the opening Hо of the cylindrical portion H in the processing unit 5. In the processing unit 5, as shown in FIG. 8, oxygen and nitrogen, which are process gases G2, are supplied into the gas space R from the supply unit 53 via the supply port 512, and a high frequency voltage is applied to the antenna 55 from the RF power source 55a. Applied. By applying the high frequency voltage, an electric field is applied to the gas space R through the window 52, and plasma is generated. Oxygen ions and nitrogen ions generated by the generated plasma impinge on the film material by colliding with the surface of the formed workpiece W.

  The flow rate per unit time of the process gas G2 introduced from the supply port 512 is set in the storage unit 74 such that the flow rate per unit time is smaller on the inner peripheral side of the rotating body 31 and larger on the outer peripheral side. The gas control unit 73 outputs an instruction so that the adjustment unit 54 controls the flow rate of the process gas G2 flowing through the pipes 53a according to the flow rate set in the storage unit 74. For this reason, the amount of active species such as ions per unit volume generated in the gas space R is larger on the outer peripheral side than on the inner peripheral side. Therefore, the amount of membrane treatment that depends on the amount of active species increases from the inner peripheral side to the outer peripheral side. However, the processing region to be subjected to the film processing is a rounded rectangular shape similar to the opening 51 a of the cylindrical body 51. For this reason, the width of the processing region, that is, the width in the rotation direction is the same in the radial direction. That is, the processing area has a constant width in the radial direction. On the other hand, the speed at which the workpiece W passes through the processing region increases from the inner circumference side to the outer circumference side. For this reason, the time for the workpiece W to pass through the processing region decreases as it goes from the inner circumference side to the outer circumference side. By increasing the supply amount of the process gas G2 toward the outer peripheral side, the film processing amount increases toward the outer peripheral side, so that the short transit time of the processing region can be compensated. As a result, the entire film processing amount of the workpiece W becomes uniform.

When film processing is performed using two or more kinds of process gases G2 as in oxynitridation processing, the film formed in the film forming unit 40 is completely converted into a compound film while the rotator rotates once. At the same time, it is necessary to make the composition of the film uniform over the entire surface. The present embodiment is suitable for the plasma processing apparatus 100 that performs film processing using two or more kinds of process gases G2. For example, assume that a film in which the ratio of x and y of silicon oxynitride (SiO _x N _y ) is 1: 1 is desired. Then, it is necessary to control both the amount of active species in which the formed film becomes a compound film and the ratio of oxygen and nitrogen contained in the active species. In the present embodiment, a plurality of process gas G2 supply locations are provided, and the supply amount of the process gas G2 at each supply location can be adjusted for each type of process gas G2. Therefore, both the amount and the ratio are controlled. It's easy to do.

  Further, as shown in FIG. 5, the process gas G2 supplied from the supply port 512 spreads horizontally along the vertical surface of the dispersion plate 57a by colliding with the dispersion plate 57a, and from the upper edge of the dispersion plate 57a. It flows into the gas space R. Thus, since the process gas G2 is dispersed, only the flow rate of the process gas G2 in the vicinity of the supply port 512 does not increase extremely. That is, the distribution of the gas flow rate from the inner circumference side to the outer circumference side is prevented from being locally increased, and increases with a linear gradient. This prevents the film processing rate from partially increasing or decreasing and causing variations in processing.

  During the process of forming the film as described above, the rotating body 31 continues to rotate and continues to circulate and convey the tray 34 on which the workpiece W is mounted. In this way, the compound film is formed by repeating the film formation and the film treatment by circulating the workpiece W. In the present embodiment, a silicon oxynitride film is formed on the surface of the workpiece W as the compound film.

  When a predetermined processing time during which the silicon oxynitride film has a desired thickness has elapsed, the film forming unit 40 and the film processing unit 50 are stopped. That is, the application of power to the target 41 by the power supply unit 6, the supply of the process gas G2 from the supply port 512, the application of voltage by the RF power supply 55a, and the like are stopped.

  As described above, after the film forming process is completed, the tray 34 on which the work W is mounted is sequentially positioned on the load lock unit 60 by the rotation of the rotating body 31 and is carried out to the outside by the transport unit.

[Film formation test results]
The film forming test results of the example corresponding to the present embodiment and the comparative example will be described with reference to the graph of FIG. Examples 1 to 3 are test results in which the flow rates per unit time of oxygen and nitrogen from the plurality of supply ports 512 are increased stepwise from the inner peripheral side to the outer peripheral side. Examples 1 and 3 are examples in which the dispersion plate 57a is used, and Example 2 is an example in which the gas is directly supplied from the supply port 512 to the gas space without using the dispersion plate 57a.

  However, in Examples 2 and 3, the flow rate of the process gas G2 at the outermost supply ports 512D and 512d outside the film formation region F is not maximized, but smaller than the supply ports 512B, C, 512b, and c. ing. That is, the flow rate is set so that supply port 512A <supply port 512D <supply port 512B <supply port 512C, supply port 512a <supply port 512d <supply port 512b <supply port 512c.

  Since the workpiece W does not pass through a position outside the film formation region F, there is no need to supply the process gas G2. However, as shown in FIG. 7, when the cylindrical body 51 is formed with a margin outside the film formation region F, the film formation must be performed unless the process gas G2 is supplied to the outside of the film formation region F. In the vicinity of the inner peripheral edge or the outer peripheral edge of the region F, the process gas G2 is diffused out of the film formation region F. As a result, the processing rate decreases in the vicinity of the inner peripheral edge and the outer peripheral edge of the film formation region F. For this reason, it is preferable to supply the process gas G2 preliminarily also outside the film formation region F. Since the process gas G2 at this time may be sufficient to compensate for the decrease due to diffusion, it may be an amount that can prevent diffusion in relation to the size of the above-described area. However, it may be necessary to increase the supply amount as compared to the supply ports 512C and 512c. Thus, the supply ports 512A, 512a, 512D, and 512d located outside the film formation region F may be excluded from the process gas G2 adjustment targets by the adjustment unit 54 according to the passage time.

In the comparative example, the process gas G2 is supplied from one place. Other conditions are common to Examples 1 to 3 and the comparative example. For example, the voltage applied to the target 41 is controlled so that the film thickness formed on the workpiece W by the film forming unit 40 is uniform.

  In the graph of FIG. 11, the horizontal axis indicates the radial distance [mm] from the rotation center of the rotating body 31 toward the outer periphery, and the vertical axis indicates the refractive index Nf of the film formed. Since the refractive index of the film changes depending on the degree of film treatment, the degree of film treatment can be determined by measuring the refractive index. As is clear from this graph, in the comparative example, the variation in the refractive index between the inner peripheral side and the outer peripheral side was large, which was ± 4.17%. On the other hand, Example 1 was ± 1.21% and Example 2 was ± 1.40%. Example 3 had the smallest variation of ± 1.00%.

  From this test result, it can be seen that by adjusting the flow rate of the process gas G2 from each supply port 512, it is possible to suppress variations in film processing from the inner peripheral side to the outer peripheral side. It can also be seen that by providing the dispersion plate 57a, the degree of the entire film treatment can be made more uniform.

  Further, the supply ports 512D and 512d outside the film formation region F are less involved in the film processing and do not need to maximize the flow rate of the process gas G2, but supply the process gas G2 even in a small amount. Thus, it can be seen that the degree of film treatment can be made more uniform. This is considered the same for the supply ports 512A and 512a on the inner peripheral side. That is, by providing the supply port 512 outside the film formation region F, it is possible to obtain effects such as equalizing the degree of film processing.

[Function and effect]
(1) This embodiment has a vacuum vessel 20 that can be evacuated inside, and a rotary body 31 that is provided in the vacuum vessel 20 and rotates by mounting a work W. The rotary body 31 rotates. By carrying out, the conveyance part 30 which circulates and conveys the workpiece | work W by the circumferential conveyance path | route T, the cylinder part H in which the opening 51a of one end extended in the direction which goes to the conveyance path | route T inside the vacuum vessel 20, and the cylinder part H And a window 52 for partitioning between the gas space R into which the process gas G2 between the inside of the cylindrical portion H and the rotating body 31 is introduced and the outside of the gas space R, and a process gas in the gas space R. A workpiece 53 that passes through the transfer path T to the process gas G2 in the gas space R by being supplied with power by applying a power to the supply unit 53 that supplies G2 and the vicinity of the window 52 outside the gas space R. Inductively coupled plasma for plasma processing of W Having an antenna 55 for generating. The supply unit 53 supplies the process gas G2 from a plurality of locations where the surface of the rotating body 31 passes through the processing region where the plasma treatment is performed, and the process gas per unit time of the plurality of locations of the supply unit 53 It has the adjustment part 54 which adjusts the supply amount of G2 separately according to the time which passes a process area | region.

  For this reason, the degree of the plasma treatment for the work W circulated and conveyed by the rotator 31 can be adjusted according to the position where the passing speed of the surface of the rotator 31 is different. For this reason, it is possible to perform a desired plasma process such as making the degree of processing on the workpiece W uniform or changing the degree of processing at a desired position. This is more effective as the diameter of the rotating body 31 is larger and the width of the film formation region F is larger, that is, the difference in peripheral speed between the inner peripheral side and the outer peripheral side of the film formation region F is larger. In the present embodiment, since the shape of the opening 51a of the cylindrical body 51 into which the process gas G2 is introduced is a rounded rectangular shape similar to that of the antenna 55, the gas space R in the vicinity of the antenna 55 is more accurately placed. Process gas G2 can be supplied, and high-efficiency plasma can be obtained.

(2) In the present embodiment, the supply unit 53 is provided corresponding to a plurality of locations where the process gas G2 is supplied, and a plurality of supply ports 512 for supplying the process gas G2 to the gas space R, The dispersion plate 57a is disposed at a position that is spaced apart from the supply port 512 and disperses the process gas G2 supplied from the supply port 512 and flows into the gas space R.

  For this reason, the process gas G2 is dispersed by the dispersion plate 57a, and the gas flow is not concentrated locally, thereby preventing variations in processing. Further, the dispersion plate 57a can prevent the hollow cathode discharge from occurring at the supply port 512. For example, in the state where there is no dispersion plate 57 a and the supply port 512 is exposed to the gas space R, there is a possibility that hollow cathode discharge occurs at the supply port 512. When a hollow cathode discharge occurs, it cannot interfere with the plasma due to inductive coupling to form a uniform plasma. In the present embodiment, the dispersive plate 57 a is spaced from the supply port 512 and disposed at a position facing the supply port 512, thereby generating a hollow cathode discharge between the dispersal plate 57 a and the supply port 512. To prevent that. Further, the process gas G2 is introduced from the supply port 512 into the gas space R in the vicinity of the window portion 52 through the dispersion plate 57a. For this reason, the process gas G2 can be more accurately supplied to the gas space R in the vicinity of the antenna 55, and high-efficiency plasma can be obtained.

(3) The flow path of the process gas G2 between the dispersion plate 57a and the supply port 512 is closed on the rotating body 31 side and communicated with the gas space R on the window 52 side.

  For this reason, since the process gas G2 is supplied along the lower surface of the window part 52 in the vicinity of the window part 52 where the electric field is generated, a plasma having a high density is formed, and the processing efficiency is improved. Further, since the flow path of the process gas G2 between the dispersion plate 57a and the supply port 512 is closed on the rotating body 31 side, the process gas G2 accumulates below the flow path. The dispersion plate 57a is cooled by the cooling unit 56 through the accumulated process gas G2. Since the plasma is suppressed from being deactivated when the dispersion plate 57a is cooled in this manner, the plasma can be generated with high efficiency. Such an effect is further enhanced by cooling the upper surface of the dispersion portion 57 in contact with the bottom surface of the cooling portion 56.

(4) The adjusting unit 54 adjusts the supply amount of the process gas G2 introduced from each supply port 512 in accordance with the position of the rotating body 31 in the direction intersecting the transport path T.

  For this reason, the supply amount of the process gas G2 from the plurality of supply ports 512 can be individually adjusted according to the position where the passage speed of the surface of the rotating body 31 is different.

(5) The film forming unit 40 is provided at a position facing the work W that is circulated and transferred through the transfer path T, and forms a film by depositing a film forming material on the work W by sputtering. The film processing by the inductively coupled plasma is performed on the film of the film forming material deposited on the workpiece W.

  For this reason, the degree of the film treatment on the formed film can be adjusted according to the position where the passing speed of the surface of the rotator 31 is different.

(6) The supply port 512 corresponds to a region where the film forming unit 40 forms a film, and is provided in the film forming region F that is an annular region along the transfer path T and outside the film forming region F. Also, the supply port 512 provided outside the film formation region F is excluded from the adjustment target of the supply amount of the process gas G2 by the adjustment unit 54.

  In this way, even when outside the film formation region F, supply of the process gas G2 can prevent the flow rate of the process gas G2 from being insufficient at the end of the film formation region F. For example, even if the outermost supply port 512 and the innermost supply port 512 are outside the film formation region F, the film processing can be made uniform by supplying the process gas G2. However, outside the outermost film formation region F, the flow rate can be saved because the flow rate in the film formation region F does not become insufficient even if the maximum flow rate is not set. That is, the supply location of the process gas G2 outside the film formation region F functions as an auxiliary supply location and an auxiliary supply port that supplement the flow rate of the process gas G2 in the film formation region F.

(7) The supply port 512 is a position that faces the gas space and is disposed in the direction along the transport path T. For this reason, the process gas G2 can be spread in the gas space in a short time.

(8) The adjusting unit 54 adjusts the supply amount of the process gas G2 introduced from each supply port 512 according to the film thickness formed on the workpiece W and the time for which the rotating body 31 passes through the processing region. For this reason, the film | membrane process suitable for a film thickness can be performed.

(9) Since the pipes 53b and 53c are connected to the cylindrical body 51 and the process gas G2 is discharged from the cylindrical body 51, it is easy to remove the cylindrical portion H from the plasma processing apparatus 100. That is, the cylindrical portion H can be removed while the pipes 53b and 53c are connected to the cylindrical body 51. For example, when the pipes 53 b and 53 c are introduced into the vacuum chamber 21 from the side surface of the vacuum vessel 20 and connected to the cylindrical body 51, the pipes 53 b and 53 c are removed when the cylindrical portion H is removed from the plasma processing apparatus 100. It is necessary to perform an operation for releasing the connection between the tube 51 and the tubular body 51. Moreover, when attaching the cylinder part H to the plasma processing apparatus 100, since piping 53b, 53c and the cylindrical body 51 must be connected again, work becomes complicated. Alternatively, when the pipes 53b and 53c are introduced into the vacuum chamber 21 from the side surface of the vacuum vessel 20, it is conceivable to provide a cutout in the cylinder portion H to avoid the pipes 53b and 53c. In this case, it is easy to remove the cylindrical portion H from the plasma processing apparatus 100, but most of the process gas G2 dispersed by the dispersion plate 57a leaks from the cutout portion. For this reason, since the process gas G2 cannot be introduced into the gas space R near the antenna 55, high-efficiency plasma cannot be obtained. Further, the leaked process gas G2 may flow to the film forming unit 40 and be mixed with the sputtering gas G1. When the process gas G2 and the sputtering gas G1 are mixed, the film forming rate of the film forming unit 40 may be reduced. When the film forming rate of the film forming unit 40 is lowered, not only the productivity is lowered, but also the optimum supply amount obtained in advance is not optimum, so that the uniformity of the film quality may be deteriorated. On the other hand, the cylinder part H of this embodiment narrows the space | interval of the perpendicular direction of the bottom face of the dispersion | distribution part 57, and the surface of the rotary body 31 to the length which the workpiece | work W can pass. For this reason, it is suppressed that the process gas G2 leaks from the gas space R. Moreover, even if it leaks very slightly, the partition 44 prevents the flow into the film forming unit 40.

(10) On the premise of specific conditions, the supply amount of the process gas G2 from a plurality of locations can be obtained by calculation. For this reason, the control device 70 may have a supply amount calculation unit that calculates the supply amount of the process gas G2. The supply amount calculation unit calculates the supply amount of the process gas G <b> 2 based on, for example, a condition input from the input device 77 or a condition stored in the storage unit 74. The calculated supply amount is set in the storage unit 74. Based on the set supply amount, the adjustment unit 54 adjusts the supply amount of the process gas G2 supplied from each supply port 512. A more specific example will be described below.

(Constitution)
The basic configuration of the plasma processing apparatus 100 is the same as that described above. The control device 70 has a supply amount calculation unit, and the storage unit 74 has an innermost or outermost film thickness, an optimal supply amount for the film thickness, and a distance from the rotation center of the rotating body 31 of each supply port 512. (The radius of a circle passing through the center of each supply port 512).

(Calculation processing)
When it is desired to form a film having a uniform film thickness and a uniform film quality in a large area, the following four conditions must be taken into consideration when adjusting the supply amount of the process gas G2.
[1] Film thickness formed in the film forming section during one rotation of the rotating body [2] Film thickness distribution of the film formed in the radial direction of the rotating body [3] Inner and outer speeds of the rotating body Difference [4] Width of plasma generation region (width of treatment region)

Here, the condition [2] can be removed from the condition by applying power individually to each of the targets 41A, 41B, and 41C of the film forming unit 40 to obtain a uniform film thickness. Further, as in the above-described embodiment, the antenna 55 and the gas space R have a rounded rectangular shape when viewed from the plane direction, so that the width of the processing region extends from the innermost periphery to the outermost periphery of the film formation region F. It will be the same. For this reason, since it can be set as the same plasma density in the range of the width | variety, the conditions of [4] can also be excluded from conditions.

  Therefore, the supply amount of each supply port 512 can be determined from the conditions [1] and [3]. That is, as the condition of [1], either the innermost or outermost film thickness of the film formation region F and the optimum supply amount suitable for the film thickness are obtained by a prior experiment or the like. And the speed difference between the inner periphery and the outer periphery of [3] is related (proportional) to the radius of the inner periphery and the outer periphery, so that the radial position (distance from the rotation center) of the plurality of supply ports 512 and the above-mentioned The supply amount of each of the plurality of supply ports 512 can be determined from the film thickness and the optimal supply amount. It should be noted that the film thickness is formed while the rotator 31 in the innermost periphery of the film formation region F is rotated once, and the film is formed while the rotator 31 is rotated once in the outermost periphery of the film formation region F. The information stored in the storage unit 74 includes the film thickness, the optimum supply amount suitable for the film thickness, and the radial position of each supply port 512.

For example, the optimum supply amount of the innermost supply port 512 with respect to a predetermined film thickness of the film formed by the film forming unit 40 is a, the innermost radius is Lin, the outermost radius is Lou, and the outermost radius The optimum supply amount of the supply port 512 is A. First, the case where the optimum supply amount a of the innermost supply port 512 is known will be described. The supply amount calculation unit obtains, from the storage unit 74, the optimum supply amount a of the innermost circumference, the radius Lin of the circle passing through the innermost supply port 512, and the radius L ou of the circle passing through the outermost supply port 512. Based on the following formula, an optimum supply amount A at the outermost periphery is obtained.
A = a × Lou / Lin
Similarly, the optimum supply amount of the other supply ports 512 can also be obtained according to the ratio of the radii. That is, when the optimum supply amount of the supply port 512 is Ax and the radius of the circle passing through the supply port 512 is Px, the optimum supply amount Ax can be obtained based on the following equation.
Ax = a × Px / Lin
On the contrary, when the optimum supply amount A of the outermost supply port 512 is known, the optimum supply amount ax of each supply port 512 is determined from the radius px of the circle passing through the supply port 512 as follows: Based on the formula, it can be obtained.
ax = A × px / Lou

(effect)
As described above, [1] if the film thickness of the film formed by the film forming unit 40 is known during one rotation of the rotating body, the supply amounts from the plurality of supply ports 512 are automatically determined. For this reason, as an assumed pattern of the supply amount from each supply port 512, the amount of data held in the storage unit 74 can be reduced as compared with the case where a large amount of data is held. For example, in the case of a film whose refractive index changes depending on the composition, such as SiON, the supply amount of each supply port 512 is automatically determined from the innermost or outermost film thickness of the film formation region F. Therefore, N ₂ and O If the mixing ratio of ₂ is adjusted, a film having a desired refractive index can be obtained.

[Other Embodiments]
The present invention is not limited to the above embodiment, and includes the following aspects.
(1) As the film forming material, various materials that can be formed by sputtering can be applied. For example, tantalum, titanium, aluminum, or the like can be applied. Various materials can be applied to the material for forming the compound.

(2) The number of targets in the film forming unit is not limited to three. The number of targets may be one, two, or four or more. By increasing the number of targets and adjusting the applied power, a finer film thickness can be controlled. Further, the number of film forming units may be one, two, or four or more. By increasing the number of film forming portions, the film forming rate can be improved. Accordingly, the number of film processing units can be increased to improve the film processing rate.

(3) Film formation by the film formation unit is not necessarily performed, and the film formation unit may not be provided. That is, the present invention is not limited to a plasma processing apparatus that performs film processing, and can be applied to a plasma processing apparatus that performs processing on a processing target using active species generated by plasma. For example, the processing unit may be configured as a plasma processing apparatus that generates plasma in a gas space and performs surface modification such as etching and ashing, cleaning, and the like. In this case, for example, an inert gas such as argon may be used as the process gas.

(4) The process gas supply port may not be provided in the cylindrical body. For example, each pipe in the supply section may be extended into a cylindrical body, and the tip of each pipe may be used as a supply port. The tip of the pipe may have a nozzle shape with a reduced diameter. In this case as well, piping may be provided not only in the film formation region but also outside the film formation region so as to function as an auxiliary supply port and an auxiliary nozzle that supplement the flow rate of the process gas in the film formation region.

(5) The number of locations where the supply unit supplies the process gas and the number of supply ports are not limited to the numbers exemplified in the above embodiment, as long as the passage speeds on the surface of the rotating body are different. By providing three or more lines in the film formation region, finer flow rate control according to the processing position can be performed. Further, as the number of supply points and supply ports is increased, the gas flow distribution can be made closer to a linear shape, and local processing variations can be prevented. The supply ports may be arranged in any one row without being provided in the two opposite rows of the cylindrical body. Further, the supply ports may not be arranged on a straight line but may be arranged at positions shifted in the height direction.

(6) The configuration of the adjustment unit is not limited to the above example. A mode in which a manual valve is provided in each pipe and adjustment is performed manually may be employed. Since it is only necessary to adjust the gas supply amount, the pressure may be constant and may be adjusted by opening and closing the valve, or the pressure may be raised and lowered. The adjustment unit may be realized by a supply port. For example, the supply amount of the process gas may be adjusted by providing supply ports having different diameters according to positions where the passage speeds of the surface of the rotating body are different. The supply port may be replaceable with a nozzle having a different diameter. Further, the diameter of the supply port may be changeable by a shutter or the like.

(7) Since the speed is a distance moved per unit time, the supply amount of the process gas from each supply port is set based on the relationship with the time required to pass through the processing region in the radial direction. Also good.

(8) The shapes of the cylindrical body, the window portion, and the antenna are not limited to those exemplified in the above embodiment. The horizontal cross section may be square, circular, or oval. However, since the passage time of the workpiece W on the inner peripheral side and the outer peripheral side is different in the shape having the same interval between the inner peripheral side and the outer peripheral side, the process gas supply amount is adjusted according to the difference in processing time. easy. In addition, when the inner peripheral side and the outer peripheral side have the same interval, for example, a space can be created between the partitioning unit 44 that separates the film forming unit 40 and the film processing unit 50. For this reason, the effect of preventing the process gas G2 such as oxygen and nitrogen from flowing into the film forming unit 40 is enhanced. Further, for example, the antenna may be formed in a fan shape or the like so that the processing area has a fan shape. In this case, the amount of process gas supplied may be the same because the time required to pass through the processing region is the same or substantially the same even if the speed increases toward the outer peripheral side.

(9) The number of trays and workpieces that are simultaneously conveyed by the conveying unit and the number of holding units that hold them may be at least one, and are not limited to the numbers exemplified in the above embodiment. That is, a mode in which one workpiece is circulated and conveyed or two or more workpieces may be circulated and conveyed. A mode in which the workpieces are circulated and conveyed in two or more rows in the radial direction may be employed.

(10) In the above embodiment, the rotating body is a rotating table, but the rotating body is not limited to a table shape. It may be a rotating body that rotates while holding a tray or a work on an arm that extends radially from the center of rotation. The film forming unit and the film processing unit may be on the bottom side of the vacuum vessel, and the vertical relationship between the film forming unit and the film processing unit and the rotating body may be reversed. In this case, the surface of the rotating body on which the holding unit is disposed is a surface that faces downward when the rotating body is in the horizontal direction, that is, the lower surface.

(11) Although the embodiment of the present invention and the modification of each part have been described above, this embodiment and the modification of each part are presented as examples, and are not intended to limit the scope of the invention. . These novel embodiments described above can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the spirit of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention and included in the invention described in the claims.

DESCRIPTION OF SYMBOLS 100 Plasma processing apparatus 20 Vacuum vessel 20a Ceiling 20b Inner bottom surface 20c Inner peripheral surface 21 Vacuum chamber 21a Opening 21b O-ring 22 Exhaust port 23 Exhaust part 24 Inlet port 25 Gas supply part 30 Conveying part 31 Rotating body 32 Motor 33 Holding part 34 Tray 40, 40A, 40B, 40C Film forming part 4 Sputtering source 41, 41A, 41B, 41C Target 42 Backing plate 43 Electrode 44 Separating part 5 Processing unit 50, 50A, 50B Film processing part 51 Cylindrical body 51a Opening 51b Outer flange 511 Inner flanges 511a, 511b, 511c Shelves 512, 512A to D, 512a to d Supply port 52 Window part 53 Supply part 53a, 53b, 53c Pipe 54 Adjusting part 54a MFC
55 Antenna 55a RF power supply 55b Matching box 551, 551a-d Conductor 552 Capacitor 56 Cooling part 57 Dispersion part 57a Dispersion plate 6 Power supply part 60 Load lock part 70 Control device 71 Mechanism control part 72 Power supply control part 73 Gas control part 74 Storage part 75 Setting unit 76 Input / output control unit 77 Input device 78 Output device E Exhaust T Transfer path M1, M3 Film processing positions M2, M4, M5 Film forming position G Reaction gas G1 Sputtering gas G2 Process gas H Cylindrical section H opening A Region R Gas space

Claims (8)

A vacuum vessel capable of creating a vacuum inside;
A transport unit that is provided in the vacuum vessel, has a rotating body that rotates by mounting a workpiece, and circulates and transports the work in a circumferential transport path by rotating the rotating body;
A cylindrical portion having an opening at one end extending in a direction toward the transport path inside the vacuum vessel;
A window part that is provided in the cylinder part and partitions between a gas space into which a process gas between the inside of the cylinder part and the rotating body is introduced and the outside of the gas space;
A supply unit for supplying the process gas to the gas space;
An inductively coupled plasma is disposed outside the gas space and in the vicinity of the window portion, and by applying power to the process gas in the gas space, the inductively coupled plasma for plasma processing the workpiece passing through the transfer path. An antenna to generate,
Have
The supply unit supplies the process gas from a plurality of locations where the surface of the rotating body has different times for passing through the processing region for performing the plasma processing,
A plasma processing apparatus, comprising: an adjustment unit that individually adjusts the supply amount of the process gas per unit time at a plurality of locations of the supply unit according to the passing time. A plurality of supply ports provided corresponding to a plurality of locations where the supply unit supplies process gas;
A dispersion plate that is arranged at a position facing the supply port at an interval, disperses the process gas supplied from the supply port, and flows into the gas space;
The plasma processing apparatus according to claim 1, comprising:   The flow path of the process gas between the dispersion plate and the supply port is closed on the rotating body side and communicated with the gas space on the window side. Plasma processing equipment.   4. The plasma processing according to claim 1, wherein the adjustment unit adjusts a supply amount of a process gas introduced from each supply port in accordance with a position in a direction intersecting the transfer path. 5. apparatus. A film forming section that is provided at a position facing the work that is circulated and conveyed through the conveying path, and that forms a film by depositing a film forming material on the work by sputtering;
5. The plasma processing apparatus according to claim 1, wherein a film processing by the inductively coupled plasma is performed on a film of a film forming material deposited on a work by the film forming unit. The supply port corresponds to a region where the film forming unit forms a film, is provided in an annular film forming region along the transfer path, and is also provided outside the film forming region,
The plasma processing apparatus according to claim 5, wherein the supply port provided outside the film formation region is excluded from an adjustment target of the supply amount of the process gas by the adjustment unit.   The plasma processing apparatus according to claim 5, wherein the supply port is disposed at a position facing each other with the gas space interposed therebetween and in a direction along the transfer path.   7. The plasma according to claim 5, wherein the adjustment unit adjusts a supply amount of a process gas supplied from each supply port in accordance with a film thickness formed on the workpiece and the passing time. Processing equipment.

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