WO2024166299A1

WO2024166299A1 - Plasma processing device

Info

Publication number: WO2024166299A1
Application number: PCT/JP2023/004383
Authority: WO
Inventors: 大輔松尾; 靖典安東
Original assignee: 日新電機株式会社
Priority date: 2023-02-09
Filing date: 2023-02-09
Publication date: 2024-08-15

Abstract

A plasma processing device (1) comprises: a vacuum vessel (2) that contains a workpiece (W) in an interior of said vacuum vessel; a high-frequency window (WR) that introduces a high-frequency magnetic field into the interior of the vacuum vessel (2); an antenna (7) that is provided so as to face the high-frequency window (WR) and generates the high-frequency magnetic field; and a turntable (3) on which the workpiece (W) is placed, said turntable rotating. The plasma processing device (1) further comprises a blocking plate (4) that is provided in the interior of the vacuum vessel (2) so as to be above the turntable (3) and to face the high-frequency window (WR), said blocking plate blocking a plasma and dividing the interior of the vacuum vessel (2) into a plasma processing area (PA) and a cooling area (CA), wherein the blocking plate (4) has formed therein a passage hole (4b1) that allows passage therethrough of the workpiece (W) that is placed on the turntable (3).

Description

Plasma Processing Equipment

This disclosure relates to a plasma processing apparatus.

Plasma processing apparatuses are known that use an antenna to generate plasma inside a vacuum chamber. Depending on the type of plasma processing apparatus, the apparatus performs a specific plasma processing on the workpiece using the generated plasma. Specifically, plasma processing apparatuses are known that perform, for example, a film removal process to remove a coating from the surface of the workpiece.

For example, Patent Document 1 discloses a coating removal device that irradiates an ion flow onto a coating material to remove the coating from the coating material. This conventional coating removal device places the coated coating material in an ion flow concentration area where two or more ion flows overlap, and removes the coating from the coating material by irradiating the ion flow onto the coating material.

International Publication No. 2016/163278

However, the above-mentioned conventional techniques have the problem that they are unable to efficiently remove the film from the object being treated.

This disclosure has been made in consideration of the above problems, and aims to provide a plasma processing device that can efficiently process objects to be processed.

In order to solve the above problems, a plasma processing apparatus according to one aspect of the present disclosure includes a vacuum vessel that houses an object to be processed therein, a high-frequency window that introduces into the vacuum vessel a high-frequency magnetic field that generates plasma inside the vacuum vessel, an antenna that is provided outside the vacuum vessel facing the high-frequency window and generates the high-frequency magnetic field, a turntable on which the object to be processed is placed and that rotates inside the vacuum vessel, and a shielding plate that is provided inside the vacuum vessel above the turntable and facing the high-frequency window, shielding the plasma and dividing the interior of the vacuum vessel into a plasma processing region and a cooling region, the shielding plate having a passage hole that allows the object to be processed placed on the turntable to pass through.

According to one aspect of the present disclosure, it is possible to provide a plasma processing apparatus capable of efficiently processing a workpiece.

1 is a diagram illustrating a configuration of a main part of a plasma processing apparatus according to a first embodiment of the present disclosure. 2 is a top view showing a configuration of a main part of the plasma processing apparatus. FIG. 2A to 2C are diagrams illustrating an example of the configuration of a holder shown in FIG. 1 . 4 is a graph showing an example of the relationship between plasma electron density and sheath thickness in the plasma processing apparatus. 1A and 1B are diagrams illustrating an example of a relationship between a workpiece and a sheath in a film removal process. 2 is a diagram for explaining the shielding plate shown in FIG. 1 and the plasma processing region and cooling region formed thereby in the plasma processing apparatus. FIG. 2 is a graph showing an example of a relationship between the rotation angle of the turntable shown in FIG. 1 and the electron density of plasma. FIG. 11 is a top view showing a configuration of a main part of a plasma processing apparatus according to a second embodiment of the present disclosure. FIG. 11 is a diagram illustrating a configuration of a main part of a plasma processing apparatus according to a third embodiment of the present disclosure. FIG. 13 is a diagram illustrating a configuration of a main part of a plasma processing apparatus according to a fourth embodiment of the present disclosure.

[Embodiment 1]
Hereinafter, the first embodiment of the present disclosure will be described in detail with reference to Fig. 1 to Fig. 3. Fig. 1 is a diagram illustrating the configuration of the main parts of a plasma processing apparatus 1 according to the first embodiment of the present disclosure. Fig. 2 is a top view illustrating the configuration of the main parts of the plasma processing apparatus 1. Fig. 3 is a diagram illustrating an example of the configuration of a holder H shown in Fig. 1.

In the following explanation, we will use as an example a plasma processing device 1 that uses inductively coupled plasma as a specific plasma treatment to perform a film removal process that removes a coating from the surface of a workpiece W as a processing object in order to regenerate the surface of the workpiece W.

However, the present disclosure can be applied to a plasma processing apparatus that performs, as a specified plasma treatment, a metal surface treatment such as carburizing, nitriding, ashing, or etching on the surface of the workpiece W. The present disclosure can also be applied to a plasma processing apparatus that performs, as a specified plasma treatment, a film formation treatment in which a specified coating is formed on the surface of the workpiece W by a plasma CVD (Chemical Vapor Deposition) method or a sputtering method.

<Configuration of Plasma Processing Apparatus 1>
As shown in Fig. 1, the plasma processing apparatus 1 of the present embodiment 1 includes a vacuum vessel 2, a turntable 3, a shielding plate 4, a high-frequency window WR, and an antenna 7. The plasma processing apparatus 1 also includes a cooling mechanism CM and an application mechanism SM. In addition, in the plasma processing apparatus 1, the workpiece W is carried in and out of the vacuum vessel 2 through a door provided in the vacuum vessel 2 by a transport mechanism (not shown). In addition to this description, the vacuum vessel 2 may be opened and the workpieces W may be replaced one by one or for each turntable 3.

The workpiece W may be, for example, a drill for metal processing made of a metal material such as tungsten carbide or high-speed tool steel. The workpiece W may also be a tool other than a drill, for example, an end mill, a mold, or a special tool, or a special part for an automobile or an aircraft. The plasma processing device 1 removes a coating, such as a diamond-like carbon film, that has been formed on the surface of the workpiece W by the above-mentioned specified plasma processing.

<Vacuum vessel 2>
The vacuum vessel 2 is made of, for example, a metal material, and includes a vessel body 2a for forming a processing chamber in which the above-mentioned predetermined plasma processing is performed on the workpiece W. The vessel body 2a is, for example, cylindrical in shape, as shown in Figures 1 and 2. An upper lid and a lower lid (not shown) are airtightly attached to the upper and lower openings of the vessel body 2a, and the vacuum vessel 2 is configured to be brought to a predetermined vacuum level by a vacuum pump (not shown) with the workpiece W accommodated therein. The vacuum vessel 2 is grounded via a grounding wire (not shown), and a predetermined processing gas such as argon can be introduced into the vacuum vessel 2 as appropriate.

<Turntable 3>
The turntable 3 is made of, for example, a metal material, and includes a disk-shaped table body 3a and a rotating shaft 3b provided at the center of the table body 3a. The turntable 3 also forms a path for applying a predetermined bias voltage by an application mechanism SM, and applies the bias voltage to the workpiece W. In the turntable 3, the rotating shaft 3b is rotatably and airtightly attached to the lower lid of the vacuum vessel 2, and a driving mechanism (not shown) is connected to the rotating shaft 3b. In the turntable 3, the rotating shaft 3b rotates in the R1 direction shown in FIG. 1, so that the table body 3a revolves (rotates) in the R1 direction inside the vacuum vessel 2.

The table body 3a is provided with, for example, multiple holders H that support the workpieces W, and a predetermined plasma treatment is sequentially performed on the workpieces W inside the plasma treatment area PA described below. In other words, the table body 3a rotates at a predetermined rotation speed (for example, 10 rpm), and the film removal treatment on each workpiece W is completed, for example, by the table body 3a rotating several times. Note that it is preferable that the diameter of the table body 3a is as close as possible to the inner diameter of the container body 2a, in order to make effective use of the high-density plasma inside the plasma treatment area PA.

<Shielding plate 4>
The shielding plate 4 is made of a conductive material such as a metal material, and is provided inside the vacuum vessel 2 above the turntable 3 and facing the high frequency window WR. As shown in FIG. 2, the shielding plate 4 has a shielding plate body 4a formed in a V-shape when viewed from above. As shown in FIG. 6, the shielding plate body 4a is provided inside the vessel body 2a of the vacuum vessel 2 symmetrically with respect to the center and with each end of the shielding plate body 4a opening at a predetermined angle with respect to the center. In the shielding plate 4, the shielding plate body 4a shields the space between the high frequency window WR and the shielding plate 4, and the space functions as a plasma processing area PA where the above-mentioned predetermined plasma processing is performed on the workpiece W. In other words, the shielding plate 4 is configured to confine the plasma generated by the high frequency magnetic field from the high frequency window WR to the inside of the plasma processing area PA as much as possible by the shielding plate body 4a. That is, the shielding plate 4 has the function of shielding the plasma and dividing the inside of the vacuum chamber 2 into a plasma processing area PA and a cooling area CA, which will be described later.

The shielding plate body 4a has through holes 4b1 and 4b2 that allow the workpiece W placed on the turntable 3 and the holder H supporting it to pass through. As a result, when the table body 3a revolves, the workpiece W and the holder H can pass through the through holes 4b1 and 4b2 to enter and exit the plasma processing area PA.

Furthermore, in the shielding plate 4, the potential of the shielding plate body 4a is floating. Specifically, the left and right ends of the shielding plate body 4a are attached to the inner wall surface 2b of the container body 2a via insulators 4c (Figure 2) made of a dielectric material. As a result, even when the shielding plate 4 confines plasma in the plasma processing area PA, the shielding plate body 4a can be charged to the plasma potential because the shielding plate 4 is not grounded. As a result, the shielding plate 4 can efficiently confine plasma in the plasma processing area PA while suppressing loss of plasma in the shielding plate body 4a, and the electron density of the plasma can be increased.

In addition to the above description, the shielding plate body 4a may be attached to the upper lid of the vacuum vessel 2. The shielding plate 4 may also be made of a dielectric material such as glass. In this case, the installation of the insulator 4c may be omitted.

<High frequency window WR>
The high frequency window WR includes a metal plate 5 and a dielectric plate 6, and is configured to introduce a high frequency magnetic field for generating plasma inside the vessel body 2a of the vacuum vessel 2 into the vessel body 2a. Specifically, the metal plate 5 is provided with a plurality of slits, and the metal plate 5 is attached to the vessel body 2a so as to close the opening 2b1 provided in the inner wall surface 2b of the vessel body 2a. The dielectric plate 6 is attached to the metal plate 5 so as to cover at least the slits.

<Antenna 7>
The antenna 7 is, for example, linear and made of a metal material such as copper. The antenna 7 is provided vertically outside the container body 2a so as to face the high-frequency window WR. The antenna 7 generates a high-frequency magnetic field using high-frequency power from a power source 8, and introduces the high-frequency magnetic field into the container body 2a through the high-frequency window WR.

Specifically, one end of the antenna 7 is electrically connected to the power supply 8 via an impedance adjustment unit (not shown) having a matching circuit. The other end of the antenna 7 is electrically grounded via a variable capacitor (not shown). The power supply 8 supplies high-frequency power of, for example, 13.56 MHz to one end of the antenna 7 via the impedance adjustment unit. In the plasma processing apparatus 1, a control unit (not shown) changes the capacitance of the variable capacitor to control the efficient supply of high-frequency power to the antenna 7.

<Cooling mechanism CM>
The cooling mechanism CM is installed in a cooling area CA provided inside the container body 2a. The cooling area CA is the space inside the container body 2a separated by the shielding plate 4, excluding the plasma processing area PA. In other words, the cooling area CA is the area inside the container body 2a on the opposite side of the shielding plate 4 from the antenna 7. The cooling mechanism CM also includes a cooling plate CM1 arranged in the cooling area CA, and is configured to cool the workpiece W using the cooling plate CM1.

Specifically, the cooling mechanism CM includes a cooling plate CM1 formed in an arc shape using a metal material, and a pipe CM2 provided on the inner wall surface 2b side of the container body 2a of the cooling plate CM1 for circulating a cooling medium such as water. In addition, in the cooling mechanism CM, the surface of the cooling plate CM1 is provided inside the container body 2a so as to contact the holder H. As a result, in this embodiment 1, the workpiece W can be cooled at a higher speed, and the processing rate of the workpiece W can be made faster. In addition, since the workpiece W can be cooled in this manner in this embodiment 1, the temperature rise in the workpiece W due to plasma processing can be suppressed, and damage to the workpiece W caused by the heat load due to the temperature rise can be significantly suppressed. Furthermore, in this embodiment 1, the cooling plate CM1 cools the workpiece W by contacting the holder H without directly contacting the workpiece W, so that the workpiece W can be reliably cooled without being damaged.

<Application mechanism SM>
The application mechanism SM includes a power source SM1 provided outside the container body 2a, and applies a predetermined bias voltage from the power source SM1 to the workpiece W via the turntable 3. In other words, in the plasma processing apparatus 1, the workpiece W is subjected to a predetermined plasma processing in the plasma processing area PA while the bias voltage from the application mechanism SM is applied to the workpiece W. The power source SM1 is configured using, for example, a DC power source, a pulse power source, or an AC power source. In the application mechanism SM, the control unit is configured to change the bias voltage from the power source SM1 depending on the content of the plasma processing on the workpiece W and the electron density of the plasma in the plasma processing area PA, so that the plasma processing is performed appropriately.

The application mechanism SM also has a number of holders H that are provided at predetermined intervals along the circumference of the table body 3a of the turntable 3. Each of the multiple holders H is for holding a workpiece W on the table body 3a, and in this embodiment 1, as described above, the table body 3a revolves, allowing the predetermined plasma processing to be performed sequentially on the multiple workpieces W.

As shown in FIG. 3, the holder H includes cylindrical support members H1 and H2 and a columnar application member H3. The support members H1 and H2 are made of, for example, a dielectric material. The support member H2 and application member H3 are provided on the table body 3a of the turntable 3. The support member H1 is supported rotatably by the support member H2, application member H3, and table body 3a. The application member H3 is electrically connected to the table body 3a and the workpiece W supported by the support member H1, and applies the bias voltage to the workpiece W supported by the support member H1.

Furthermore, in the holder H, the support member H1 is configured to come into contact with the cooling plate CM1. As a result, in this embodiment 1, the support member H1 comes into contact with the cooling plate CM1 as the table body 3a revolves, and the support member H1 (holder H) rotates (spins) in the R2 direction shown in FIG. 2. As a result, in this embodiment 1, since the workpiece W rotates together with the holder H in the plasma processing area PA, the opposing surface of the workpiece W with respect to the high-frequency window WR can be changed in accordance with the spin. Therefore, in this embodiment 1, it is possible to reliably perform more uniform processing on the workpiece W.

The plasma processing apparatus 1 of the present embodiment 1 configured as described above includes a vacuum vessel 2 that houses a workpiece W therein, a high-frequency window WR that introduces a high-frequency magnetic field into the vacuum vessel 2, and an antenna 7 that is disposed opposite the high-frequency window WR and generates a high-frequency magnetic field. The plasma processing apparatus 1 also includes a turntable 3 on which the workpiece W is placed and rotates, and an application mechanism SM that applies a predetermined bias voltage from a power source SM1 to the workpiece W via the turntable 3. The plasma processing apparatus 1 includes a shielding plate 4 that is disposed above the turntable 3 and inside the vacuum vessel 2 opposite the high-frequency window WR, shielding the space between the turntable 3 and the high-frequency window WR, and has through holes 4b1 and 4b2 formed in the shielding plate 4 that allow the workpiece W placed on the turntable 3 to pass through.

With the above configuration, in this embodiment 1, a plasma processing apparatus 1 capable of efficiently processing the workpieces W can be configured. Specifically, in this embodiment 1, the inside of the vacuum vessel 2 is divided into plasma processing areas PA by the shielding plate 4, so that the electron density of the plasma in the plasma processing area PA can be increased, and the film removal rate (processing rate) for the workpieces W can be increased. As a result, in this embodiment 1, the workpieces W can be efficiently processed. Also, in this embodiment 1, as shown in Figures 1 and 2, a single plasma source having one antenna 7 and one high-frequency window WR can be used to sequentially perform a predetermined plasma processing on multiple workpieces W. As a result, in this embodiment 1, a low-cost plasma processing apparatus 1 capable of performing plasma processing on multiple workpieces W can be configured.

Below, the effect of the plasma processing apparatus 1 of this embodiment 1 will be specifically described with reference to Figs. 4 to 7. Fig. 4 is a graph showing an example of the relationship between plasma electron density and sheath thickness in the plasma processing apparatus 1. Fig. 5 is a diagram explaining an example of the relationship between the workpiece W and the sheath SA in a film removal process. Fig. 6 is a diagram explaining the shielding plate 4 shown in Fig. 1, and the plasma processing area PA and cooling area CA formed thereby in the plasma processing apparatus 1. Fig. 7 is a graph showing an example of the relationship between the rotation angle of the turntable 3 shown in Fig. 1 and the plasma electron density. Note that the power supply 8, power supply SM1, and piping CM2 are not shown in Fig. 6.

As shown in FIG. 4, in the plasma processing apparatus 1 of this embodiment 1, for example, when the control unit controls the power supply 8 to change the power (high frequency power) supplied to the antenna 7, the electron density of the plasma generated in the plasma processing area PA changes as shown on the horizontal axis of FIG. 4. Also, in the plasma processing apparatus 1 of this embodiment 1, for example, when the control unit controls the power supply SM1 to change the bias voltage, the sheath thickness of the sheath SA (FIG. 5) generated around the workpiece W in the plasma processing area PA changes according to the plasma electron density for each bias voltage. Here, the sheath SA, as is well known, is a shielding layer that is generated to surround the workpiece W by the bias voltage and prevents the plasma ions from approaching the workpiece W.

Specifically, when the bias voltage is, for example, -100V, the sheath thickness changes according to the plasma electron density, as shown by curve 71 in FIG. 4. When the bias voltage is, for example, -250V, the sheath thickness changes according to the plasma electron density, as shown by curve 72 in FIG. 4. When the bias voltage is, for example, -500V, the sheath thickness changes according to the plasma electron density, as shown by curve 73 in FIG. 4. In other words, as is clear from curves 71 to 73 in FIG. 4, the higher the plasma electron density in the plasma processing area PA and the smaller the absolute value of the bias voltage applied to the workpiece W, the smaller the sheath thickness can be, and the more accurately the plasma processing of the workpiece W can be performed.

Furthermore, as shown in 501 in FIG. 5, when the workpiece W is the above-mentioned drill, the sheath thickness around the workpiece W in a cross-sectional view of the workpiece W varies depending on the plasma electron density, as shown in 502 and 503 in FIG. 5. Specifically, when the plasma electron density is low, the thickness of the sheath SA becomes large, as shown in 502 in FIG. 5. Therefore, the plasma ions P1 are prevented from approaching the surface of the workpiece W by the relatively thick sheath SA. As a result, when the plasma electron density is low and the sheath thickness is large, it becomes difficult to perform a uniform film removal process on the workpiece W.

On the other hand, when the plasma electron density can be increased, as in the plasma processing apparatus 1 of this embodiment 1, the thickness of the sheath SA can be made smaller, as shown in 503 in FIG. 5, than that shown in 502 in FIG. 5. Therefore, in the plasma processing apparatus 1 of this embodiment 1, the relatively thin sheath SA prevents the plasma ions P1 from approaching the surface of the workpiece W. In other words, in the plasma processing apparatus 1 of this embodiment 1, the plasma ions P1 can more easily approach the surface of the workpiece W, allowing for uniform film removal processing.

6, in the plasma processing apparatus 1 of the present embodiment 1, the inside of the vessel body 2a of the vacuum vessel 2 is divided by the shielding plate 4 into a plasma processing area PA on the plasma source side and a cooling area CA on the opposite side of the plasma source. Specifically, the shielding plate 4 is installed inside the vessel body 2a so that the center of the shielding plate body 4a is, for example, on the center C1 of the rotation axis 3b of the turntable 3. In addition, the shielding plate body 4a has an opening angle of its left and right ends, and the above-mentioned predetermined angle θ is set to, for example, 120°. In the plasma processing apparatus 1, the plasma processing area PA in which the electron density of the plasma is increased by the shielding plate 4 and the cooling area CA in which the plasma processing on the workpiece W is temporarily stopped and the temperature rise in the workpiece W due to the execution of the plasma processing can be appropriately formed by substantially shielding the plasma source with the shielding plate 4 and suppressing the spread of the plasma. In addition, in the plasma processing apparatus 1, the above-mentioned predetermined plasma processing can be performed more efficiently in the plasma processing area PA.

More specifically, in the plasma processing apparatus 1 of the present embodiment 1, when a plasma having an electron density of, for example, 1E+17/ ^m3 is generated as a reference electron density, the plasma electron density in the plasma processing area PA can be set to a value greater than the reference electron density, as shown by the upward arrow in Fig. 7. As a result, in the plasma processing apparatus 1, the plasma processing of the workpiece W can be efficiently performed in the plasma processing area PA. The rotation angle on the horizontal axis in Fig. 7 is the rotation angle of the turntable 3 with respect to the center C1, and is set to 0° when any reference position of the turntable 3 faces the antenna 7.

Furthermore, in the cooling area CA, as shown by the downward arrow in FIG. 7, the plasma electron density can be set to a value smaller than the reference electron density. As a result, in the cooling area CA, the execution of plasma processing is suppressed, so that the temperature rise in the workpiece W due to the plasma processing can be suppressed, and the temperature of the workpiece W can be easily lowered. Furthermore, in the plasma processing apparatus 1, since the workpiece W is cooled by the cooling plate CM1 of the cooling mechanism CM, the temperature rise in the workpiece W can be significantly suppressed. As a result, in the plasma processing apparatus 1, the occurrence of damage, etc., in the workpiece W can be significantly reduced.

In the above description, the shielding plate 4 is arranged inside the container body 2a so that the center of the shielding plate body 4a is located on the center C1 of the rotation axis 3b of the turntable 3. However, this embodiment is not limited to this, and for example, the center of the shielding plate body 4a may be arranged closer to the high frequency window WR than the center C1. This is preferable because it allows the electron density of the plasma to be increased.

[Embodiment 2]
The second embodiment of the present disclosure will be specifically described with reference to Fig. 8. Fig. 8 is a top view showing a main configuration of a plasma processing apparatus 1 according to the second embodiment of the present disclosure. For convenience of explanation, the same reference numerals are used for members having the same functions as those described in the first embodiment, and the explanations thereof will not be repeated. Also, in Fig. 8, the power source 8, the power source SM1, and the piping CM2 are not shown.

The main difference between this embodiment 2 and the above embodiment 1 is that a contact member 2c is provided that rotates the support member H1 in response to the rotation of the turntable 3.

As shown in FIG. 8, in the plasma processing apparatus 1 of this embodiment 2, a contact member 2c is provided on the inner wall surface 2b of the vacuum vessel 2. This contact member 2c is, for example, made of a metal material and has a rod-like shape. One end of the contact member 2c is attached to the inner wall surface 2b so as to protrude from the inner wall surface 2b into the inside of the vessel body 2a. The other end (protruding end) of the contact member 2c is configured so as to be able to come into contact with the support member H1 of the holder H.

In the plasma processing apparatus 1 of this embodiment 2, when the support member H1 of the holder H comes into contact with the other end of the contact member 2c in response to the rotation of the turntable 3, the support member H1 is pressed (kicked) against the other end of the contact member 2c in response to the rotation. As a result, in the holder H, the support member H1 rotates (spins) while supporting the workpiece W in response to the rotation of the turntable 3.

With the above configuration, the plasma processing apparatus 1 of this embodiment 2 achieves the same effects as that of embodiment 1.

Furthermore, in the plasma processing apparatus 1 of this embodiment 2, in addition to rotation due to contact with the cooling plate CM1, the support member H1 of the holder H is rotated by contact with the contact member 2c, so that more uniform processing of the workpiece W can be performed more reliably. However, for example, in a case where the installation of the cooling mechanism CM is omitted, the support member H1 may be rotated only by contact with the contact member 2c.

In the above description of the first and second embodiments, the support member H1 of the holder H is rotated by contact with the cooling plate CM1 and/or the contact member 2c. However, this embodiment is not limited to this, and for example, a rotation mechanism such as a gear may be provided that is connected to the holder H and rotates the support member H1 of the holder H using a rotational force from a drive mechanism that drives the rotation shaft 3b of the turntable 3.

[Embodiment 3]
The third embodiment of the present disclosure will be specifically described with reference to Fig. 9. Fig. 9 is a diagram for explaining the main configuration of a plasma processing apparatus 1 according to the third embodiment of the present disclosure. For convenience of explanation, the same reference numerals are given to members having the same functions as those described in the first embodiment, and the explanations thereof will not be repeated. In Fig. 9, the cooling mechanism CM is omitted.

The main difference between this embodiment 3 and the above embodiment 1 is that multiple workpieces W are provided along the extension direction of the antenna 7.

As shown in FIG. 9, in the plasma processing apparatus 1 of this embodiment 3, multiple groups of holders H, for example, two rows, are provided, each arranged in an arc along the extension direction of the antenna 7. Specifically, the lower vertical group of holders H is attached to the table body 3a of the turntable 3, as in the embodiment 1. The upper vertical group of holders H is attached to the table body 3a via a support rod 15, one end of which is provided on the table body 3a. The support rod 15 is adapted to rotatably support a support member H1 that supports the workpiece W.

Furthermore, in the plasma processing apparatus 1 of this embodiment 3, the inside of the vessel body 2a is divided into a plasma processing area PA and a cooling area CA by a shielding plate 14 having a shielding plate body 14a. As illustrated in FIG. 9, the shielding plate 14 is provided with a passing hole 14b1 that allows the vertically upper and lower groups of holders H to pass through. As a result, in this embodiment 3, the workpieces W held by each holder H of the upper group and the workpieces W held by each holder H of the lower group can be moved between the plasma processing area PA and the cooling area CA in accordance with the rotation of the turntable 3.

With the above configuration, the plasma processing apparatus 1 of this embodiment 3 achieves the same effects as that of embodiment 1.

In addition, in the plasma processing apparatus 1 of this embodiment 3, the workpieces W are supported by two rows of holders H along the extension direction of the antenna 7, so the number of workpieces W processed per unit time can be easily increased.

In the above explanation, a case has been described in which multiple workpieces W are arranged along the extension direction of the antenna 7 using the support rod 15. However, this embodiment is not limited to this, and for example, two mutually opposing turntables may be installed inside the container body 2a, and multiple holders H may be provided on each turntable.

[Embodiment 4]
The fourth embodiment of the present disclosure will be specifically described with reference to Fig. 10. Fig. 10 is a diagram for explaining the configuration of the main parts of a plasma processing apparatus 1 according to the fourth embodiment of the present disclosure. For convenience of explanation, the same reference numerals are given to members having the same functions as those explained in the first embodiment, and the explanations thereof will not be repeated.

The main difference between this embodiment 4 and the above embodiment 1 is that a predetermined plasma treatment is performed on a relatively large workpiece W0.

As shown in FIG. 10, in the plasma processing apparatus 1 of the present embodiment 4, for example, a cylindrical workpiece W0 is placed on the table body 3a of the turntable 3. The workpiece W0 is placed above the rotation axis 3b, which is the center of rotation of the turntable 3. In the plasma processing apparatus 1 of the present embodiment 4, the inside of the container body 2a is divided into a plasma processing area PA and a cooling area CA by a shielding plate 24 having a shielding plate body 24a. As shown in FIG. 10, the shielding plate 24 is provided with a through hole 24b that allows the workpiece W0, which rotates with the rotation of the turntable 3, to pass through. As a result, in the present embodiment 4, the opposing surface of the workpiece W0 with respect to the high-frequency window WR can be changed according to the rotation of the turntable 3. As a result, in the present embodiment 4, a part of the workpiece W0 can be moved sequentially between the plasma processing area PA and the cooling area CA.

With the above configuration, the plasma processing apparatus 1 of this embodiment 4 achieves the same effects as that of embodiment 1.

〔summary〕
In order to solve the above problems, the plasma processing apparatus of the first aspect of the present disclosure comprises a vacuum vessel for accommodating a workpiece therein, a high-frequency window for introducing a high-frequency magnetic field into the vacuum vessel to generate plasma inside the vacuum vessel, an antenna arranged outside the vacuum vessel facing the high-frequency window and generating the high-frequency magnetic field, a turntable on which the workpiece is placed and which rotates inside the vacuum vessel, and a shielding plate arranged inside the vacuum vessel above the turntable and facing the high-frequency window, shielding from plasma and dividing the inside of the vacuum vessel into a plasma processing region and a cooling region, the shielding plate having a passage hole formed therein to allow the workpiece placed on the turntable to pass through.

The above configuration makes it possible to provide a plasma processing apparatus that can efficiently process the workpiece.

In a second aspect of the present disclosure, in the plasma processing apparatus of the first aspect, when viewed from the top of the vacuum vessel, the shielding plate may be provided inside the vacuum vessel so that it is symmetrical with respect to its center and that each of the left and right ends opens at a predetermined angle with respect to the center.

With the above configuration, the shielding plate can appropriately form a plasma processing area inside the vacuum vessel, allowing plasma processing to be performed more efficiently.

In a third aspect of the present disclosure, in the plasma processing apparatus of the first or second aspect, the potential of the shielding plate may be floating.

The above configuration makes it possible to prevent plasma loss and maintain a higher plasma density.

A fourth aspect of the present disclosure is a plasma processing apparatus according to any one of the first to third aspects, further comprising an application mechanism that includes a power source provided outside the vacuum vessel and applies a predetermined bias voltage from the power source to the workpiece via the turntable, and the application mechanism has a holder provided on the turntable to hold the workpiece, the holder being provided on the turntable and including a support member that rotatably supports the workpiece, and an application member that is electrically connected to the turntable and the workpiece supported by the support member and applies the bias voltage to the workpiece supported by the support member.

The above configuration ensures that the workpiece is treated more uniformly.

A fifth aspect of the present disclosure is the plasma processing apparatus of the fourth aspect, in which a contact member may be provided inside the vacuum vessel to come into contact with the support member of the holder and rotate the support member in response to the rotation of the turntable.

The above configuration makes it possible to more reliably perform more uniform processing on the workpiece.

A sixth aspect of the present disclosure is a plasma processing apparatus according to either the fourth or fifth aspect, which may include a cooling plate disposed inside the vacuum vessel in an area of the shielding plate opposite the antenna, and a cooling mechanism that uses the cooling plate to cool the workpiece.

The above configuration allows the workpiece to be cooled more quickly, resulting in a faster processing rate.

In a seventh aspect of the present disclosure, in the plasma processing apparatus of the sixth aspect, the cooling plate may be in contact with the holder.

The above configuration ensures that the workpiece can be cooled without damaging it.

In an eighth aspect of the present disclosure, in the plasma processing apparatus of any one of the first to seventh aspects, a plurality of the objects to be processed may be provided inside the vacuum vessel along the extension direction of the antenna.

The above configuration makes it easy to increase the number of objects processed per unit time.

This disclosure is not limited to the above-described embodiments, and various modifications are possible within the scope of the claims. Embodiments obtained by appropriately combining the technical means disclosed in different embodiments are also included in the technical scope of this disclosure.

REFERENCE SIGNS LIST 1 Plasma processing apparatus 2 Vacuum vessel 2c Contact member 3 Turntable 3b

Rotating shaft

4, 14, 24 Shielding plate 4b1, 4b2, 14b1, 24b Passing hole 5 Metal plate (high frequency window)
6. Dielectric plate (high frequency window)
7 Antenna W, W0 Work (processing object)
SM: Voltage application mechanism SM1: Power supply H: Holder H1, H2: Support member H3: Voltage application member CM: Cooling mechanism CM1: Cooling plate WR: High frequency window PA: Plasma processing area CA: Cooling area

Claims

a vacuum vessel for accommodating an object to be treated therein;
a high frequency window for introducing a high frequency magnetic field into the vacuum vessel to generate plasma therein;
an antenna that is provided outside the vacuum vessel so as to face the high frequency window and that generates the high frequency magnetic field;
a turntable on which the object to be processed is placed and which rotates within the vacuum vessel;
a shielding plate provided inside the vacuum vessel above the turntable and facing the high-frequency window, shielding the plasma and dividing the inside of the vacuum vessel into a plasma processing region and a cooling region, the shielding plate having a passage hole formed therein to allow the workpiece placed on the turntable to pass through.
The plasma processing apparatus according to claim 1, wherein the shielding plate is provided inside the vacuum vessel so that, when viewed from above the vacuum vessel, it is symmetrical with respect to its center and each of the left and right ends opens at a predetermined angle with respect to the center.
The plasma processing apparatus of claim 1, wherein the potential of the shielding plate is floating.
The vacuum chamber further includes a power supply provided outside the vacuum chamber, and an application mechanism for applying a predetermined bias voltage from the power supply to the workpiece via the turntable;
The application mechanism includes:
a holder provided on the turntable for holding the workpiece;
The holder is
A support member that is provided on the turntable and rotatably supports the object to be processed;
2. The plasma processing apparatus according to claim 1, further comprising: an application member electrically connected to said turntable and said workpiece supported by said support member, and applying said bias voltage to said workpiece supported by said support member.
The plasma processing apparatus according to claim 4, wherein a contact member is provided inside the vacuum vessel, the contact member being in contact with the support member of the holder and rotating the support member in response to the rotation of the turntable.
The plasma processing apparatus according to claim 4, further comprising a cooling plate disposed inside the vacuum vessel in an area of the shielding plate opposite the antenna, and a cooling mechanism for cooling the workpiece using the cooling plate.
The plasma processing apparatus of claim 6, wherein the cooling plate is in contact with the holder.
The plasma processing apparatus according to claim 1 , wherein a plurality of the objects to be processed are provided inside the vacuum vessel along an extending direction of the antenna.