JP2017163385A - 電子装置及び電子機器 - Google Patents
電子装置及び電子機器 Download PDFInfo
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- JP2017163385A JP2017163385A JP2016046892A JP2016046892A JP2017163385A JP 2017163385 A JP2017163385 A JP 2017163385A JP 2016046892 A JP2016046892 A JP 2016046892A JP 2016046892 A JP2016046892 A JP 2016046892A JP 2017163385 A JP2017163385 A JP 2017163385A
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 67
- 239000004020 conductor Substances 0.000 claims description 338
- 229910000679 solder Inorganic materials 0.000 claims description 32
- 230000008054 signal transmission Effects 0.000 abstract description 42
- 239000010410 layer Substances 0.000 description 203
- 239000004065 semiconductor Substances 0.000 description 17
- 238000010586 diagram Methods 0.000 description 16
- 239000010949 copper Substances 0.000 description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 12
- 238000004458 analytical method Methods 0.000 description 12
- 229910052802 copper Inorganic materials 0.000 description 12
- 230000005672 electromagnetic field Effects 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 230000005540 biological transmission Effects 0.000 description 10
- 239000011810 insulating material Substances 0.000 description 10
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- 239000000758 substrate Substances 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
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- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
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Abstract
Description
ここでは、マイクロ波、ミリ波、テラヘルツ波等の高周波が用いられる半導体装置と回路基板、一例としてMMIC(モノリシックマイクロ波集積回路)チップとプリント配線板との接続構造を含む電子装置を例に、その接続構造について述べる。
以上のような点に鑑み、ここでは以下に実施の形態として示すような構成を採用し、電子部品間の接続部の微細化を抑えて低損失な信号伝送を行うことのできる接続構造を有する電子装置、そのような電子装置を備える電子機器を実現する。
ここでは上記同様、プリント配線板とMMICチップとを有する電子装置を例にする。
図3〜図5は第1の実施の形態に係る電子装置の一例を示す図である。図3は第1の実施の形態に係る電子装置の一例の要部斜視模式図である。図4(A)は図3の面S1に沿った断面模式図、図4(B)は図3の面S2に沿った断面模式図である。図5(A)は図3の面S3に沿った断面をMMICチップ側に見た時の平面模式図、図5(B)は図3の面S3に沿った断面をプリント配線板側に見た時の平面模式図である。
プリント配線板10は、図3に示すように、信号線11、誘電体層12及び導体層13を含む。図3、図4(A)及び図4(B)に示すように、誘電体層12の一方の面に、導体層13が設けられ、誘電体層12の他方の面に、導体層13に対向して信号線11が設けられる。誘電体層12には、各種絶縁材料を用いることができ、例えば、エポキシやポリイミド等の有機系絶縁材料、酸化シリコンや窒化シリコン等の無機系絶縁材料を用いることができる。導体層13及び信号線11には、各種導体材料を用いることができ、例えば、銅(Cu)を用いることができる。導体層13は、電子装置1の動作時に接地電位となる導体層(接地導体面)である。信号線11は、後述するMMICチップ20の信号線21との間で信号の伝送が行われる信号線である。プリント配線板10の信号の伝送線路は、例えば50Ωの特性インピーダンスを持つように設計されるマイクロストリップ線路である。
プリント配線板10上に実装されるMMICチップ20は、図3に示すように、信号線21、誘電体層22及び導体層23を含む。図3、図4(A)及び図4(B)に示すように、誘電体層22の一方の面に、導体層23が設けられ、誘電体層22の他方の面に、導体層23に対向して信号線21が設けられる。誘電体層22には、各種絶縁材料を用いることができ、例えば、エポキシやポリイミド等の有機系絶縁材料、酸化シリコンや窒化シリコン等の無機系絶縁材料を用いることができる。導体層23及び信号線21には、各種導体材料を用いることができ、例えば、銅を用いることができる。導体層23は、電子装置1の動作時に接地電位となる導体層(接地導体面)である。信号線21は、前述したプリント配線板10の信号線11との間で信号伝送が行われる信号線である。MMICチップ20の信号の伝送線路は、例えば50Ωの特性インピーダンスを持つように設計されるマイクロストリップ線路である。
図8は第1の実施の形態に係る電子装置の接続部の構成例を示す図である。図8(A)〜図8(C)はそれぞれ、電子装置の一例の要部断面模式図である。
図9は第1の実施の形態に係る導波管の電磁界解析モデルの一例を示す図、図10は第1の実施の形態に係る導波管の電磁界解析結果の一例を示す図である。
上記第1の実施の形態では、プリント配線板10の接地導体群(導体層13,14及び導体部15)と、MMICチップ20の接地導体群(導体層23,24及び導体部25)とを、不連続に配置される接続部30群によって、電気的及び機械的に接続した。このほか、プリント配線板10及びMMICチップ20の接地導体群は、一対の連続した導体壁によって、電気的及び機械的に接続されてもよい。
図11に示す電子装置1Aは、プリント配線板10の導体層14と、MMICチップ20の導体層24とが、一対の連続した導体壁30Aで電気的及び機械的に接続された構成を有する。このように電子装置1Aでは、プリント配線板10とMMICチップ20とが、導体壁30A群を接続部として、電気的及び機械的に接続される。電子装置1Aは、このような点で、上記第1の実施の形態で述べた電子装置1と相違する。
例えば、半田を用いた導体壁30Aは、プリント配線板10上へのMMICチップ20の実装時に、互いの導体層14と導体層24との間に、予め壁状に形成した半田を介在させ、その半田をリフローすることで、得られる。
ここでも上記第1に実施の形態と同様に、プリント配線板とMMICチップとを有する電子装置を例にする。
プリント配線板80は、図12〜図14に示すように、信号線81、誘電体層82及び導体層83を含む。誘電体層82の一部を介して、MMICチップ90と接続される面側の表層に導体層83が設けられ、プリント配線板80の内層に、導体層83に対向して信号線81が設けられる。導体層83は、開口部84(スリット)を有する。信号線81は、平面視又は断面視で開口部84を横断するように配置され、先端部がビア等の導体部85で導体層83に接続されて短絡される。導体層83は、電子装置1Bの動作時に接地電位となる導体層(接地導体面)である。信号線81は、後述するMMICチップ90の信号線91との間で信号伝送が行われる信号線である。プリント配線板80の信号の伝送線路は、マイクロストリップ線路である。誘電体層82には、各種絶縁材料を用いることができる。導体層83、信号線81及び導体部85には、銅等の各種導体材料を用いることができる。
プリント配線板80上に実装されるMMICチップ90は、図12〜図14に示すように、信号線91、誘電体層92及び導体層93を含む。誘電体層92の一部を介して、プリント配線板80と接続される面側の表層に導体層93が設けられ、MMICチップ90の内層に、導体層93に対向して信号線91が設けられる。導体層93は、開口部94(スリット)を有する。信号線91は、平面視又は断面視で開口部94を横断するように配置され、先端部がビア等の導体部95で導体層93に接続されて短絡される。導体層93は、電子装置1Bの動作時に接地電位となる導体層(接地導体面)である。信号線91は、前述したプリント配線板80の信号線81との間で信号伝送が行われる信号線である。MMICチップ90の信号の伝送線路は、マイクロストリップ線路である。誘電体層92には、各種絶縁材料を用いることができる。導体層93、信号線91及び導体部95には、銅等の各種導体材料を用いることができる。
図15は第3の実施の形態に係る電子装置の電磁界解析結果の一例を示す図である。
また、電子装置1Bにおいて、上記第2の実施の形態で述べた導体壁30Aの例に従い、接続部100群に替えて、導体層83と導体層93とを電気的及び機械的に接続し所定の領域を囲む導体壁を設けてもよい。
図16(A)には、誘電体層142の一方の面に接地導体の導体層143が設けられ、他方の面に信号線141が設けられた、マイクロストリップ線路140の要部断面を模式的に図示している。上記のように、プリント配線板10の信号線11やプリント配線板80の信号線81、MMICチップ20の信号線21やMMICチップ90の信号線91には、図16(A)のようなマイクロストリップ線路140を採用することができる。
また、以上の説明では、プリント配線板10とMMICチップ20との接続、及びプリント配線板80とMMICチップ90との接続を例にしたが、上記手法は、各種電子部品群の接続に同様に採用することができる。
図17には、接続部170群によって接続された電子部品180と電子部品190とを含む電子装置200の要部断面を模式的に図示している。接続部170群は、電子部品180に設けられる接地導体183(GND)、及び電子部品190に設けられる接地導体193(GND)と電気的に接続される。電子部品180の接地導体183、及び電子部品の接地導体193にはそれぞれ、対応する位置に設けられた接地導体面が含まれている。電子部品180の接地導体183、電子部品190の接地導体193、及びそれらを接続する接続部170群によって、導波管210、変換部220及び変換部230が形成される。
また、上記手法が採用される電子装置1,1A,1B,200等は、各種電子機器に用いることができる。例えば、コンピュータ(パーソナルコンピュータ、スーパーコンピュータ、サーバ等)、スマートフォン、携帯電話、タブレット端末、センサ、カメラ、オーディオ機器、測定装置、検査装置、製造装置といった、各種電子機器に用いることができる。
図18には、電子機器の一例を模式的に図示している。図18に示すように、例えば上記図17に示したような電子装置200が、先に例示したような各種の電子機器250に搭載(内蔵)される。
以上説明した実施の形態に関し、更に以下の付記を開示する。
前記第1電子部品の上方に設けられ、第2信号線、及び前記第1接地導体面に対向する第2接地導体面を含む第2電子部品と、
前記第1接地導体面、前記第2接地導体面、及び前記第1接地導体面と前記第2接地導体面との間に設けられた対向する一対の第1接地導体壁を含む導波管と、
前記第1信号線と前記導波管との間で信号を変換する第1変換部と、
前記第2信号線と前記導波管との間で信号を変換する第2変換部と
を含むことを特徴とする電子装置。
(付記3) 前記一対の第1接地導体壁はそれぞれ、連続した壁であることを特徴とする付記1に記載の電子装置。
(付記6) 前記接続部にポストが用いられることを特徴とする付記4又は5に記載の電子装置。
前記第1誘電体層の他方の面に、前記第3接地導体面に対向して前記第1信号線が設けられることを特徴とする付記1乃至6のいずれかに記載の電子装置。
前記第3接地導体面と、
前記第3接地導体面に対向して前記第2電子部品に設けられた第4接地導体面と、
前記第3接地導体面と前記第4接地導体面との間に設けられた第2接地導体壁と
を含むことを特徴とする付記7に記載の電子装置。
前記第3接地導体面は、前記第1信号線と前記第4接地導体面との間に第1開口部を含むことを特徴とする付記8に記載の電子装置。
(付記11) 前記導波管の前記第1接地導体面は、前記第3接地導体面と同一の層内に、前記第3接地導体面に連続して設けられることを特徴とする付記7乃至10のいずれかに記載の電子装置。
前記第2誘電体層の他方の面に、前記第5接地導体面に対向して前記第2信号線が設けられることを特徴とする付記1乃至11のいずれかに記載の電子装置。
前記第5接地導体面と、
前記第5接地導体面に対向して前記第1電子部品に設けられた第6接地導体面と、
前記第5接地導体面と前記第6接地導体面との間に設けられた第3接地導体壁と
を含むことを特徴とする付記12に記載の電子装置。
前記第5接地導体面は、前記第2信号線と前記第6接地導体面との間に第2開口部を含むことを特徴とする付記13に記載の電子装置。
(付記16) 前記導波管の前記第2接地導体面は、前記第5接地導体面と同一の層内に、前記第5接地導体面に連続して設けられることを特徴とする付記12乃至15のいずれかに記載の電子装置。
前記第1電子部品の上方に設けられ、第2信号線、及び前記第1接地導体面に対向する第2接地導体面を含む第2電子部品と、
前記第1接地導体面、前記第2接地導体面、及び前記第1接地導体面と前記第2接地導体面との間に設けられた対向する一対の第1接地導体壁を含む導波管と、
前記第1信号線と前記導波管との間で信号を変換する第1変換部と、
前記第2信号線と前記導波管との間で信号を変換する第2変換部と
を含む電子装置を備えることを特徴とする電子機器。
10,80,310 プリント配線板
11,21,81,91,141,151,161,181,191 信号線
12,22,82,92,142,152,162 誘電体層
13,14,14a,23,24,24a,83,93,143,153,163 導体層
15,25,85,95 導体部
20,90,320 MMICチップ
20a,90a 本体部
30,73,100,170,340 接続部
30A 導体壁
31 半田バンプ
32,34,35 ポスト
33,36 半田
40,40a,40b,40c,40A,110,210 導波管
50,50A,60,60A,120,130,220,230 変換部
70 モデル
71,72 接地導体面
84,94 開口部
140 マイクロストリップ線路
150 ストリップ線路
160 コプレーナ線路
180,190 電子部品
183,193 接地導体
250 電子機器
311,321 電極
330 ワイヤ
Claims (7)
- 第1信号線及び第1接地導体面を含む第1電子部品と、
前記第1電子部品の上方に設けられ、第2信号線、及び前記第1接地導体面に対向する第2接地導体面を含む第2電子部品と、
前記第1接地導体面、前記第2接地導体面、及び前記第1接地導体面と前記第2接地導体面との間に設けられた対向する一対の第1接地導体壁を含む導波管と、
前記第1信号線と前記導波管との間で信号を変換する第1変換部と、
前記第2信号線と前記導波管との間で信号を変換する第2変換部と
を含むことを特徴とする電子装置。 - 前記一対の第1接地導体壁はそれぞれ、複数の第1壁部を含むことを特徴とする請求項1に記載の電子装置。
- 前記一対の第1接地導体壁はそれぞれ、連続した壁であることを特徴とする請求項1に記載の電子装置。
- 前記一対の第1接地導体壁はそれぞれ、前記第1電子部品と前記第2電子部品とを電気的及び機械的に接続する接続部であることを特徴とする請求項1乃至3のいずれかに記載の電子装置。
- 前記接続部に半田が用いられることを特徴とする請求項4に記載の電子装置。
- 前記接続部にポストが用いられることを特徴とする請求項4又は5に記載の電子装置。
- 第1信号線及び第1接地導体面を含む第1電子部品と、
前記第1電子部品の上方に設けられ、第2信号線、及び前記第1接地導体面に対向する第2接地導体面を含む第2電子部品と、
前記第1接地導体面、前記第2接地導体面、及び前記第1接地導体面と前記第2接地導体面との間に設けられた対向する一対の第1接地導体壁を含む導波管と、
前記第1信号線と前記導波管との間で信号を変換する第1変換部と、
前記第2信号線と前記導波管との間で信号を変換する第2変換部と
を含む電子装置を備えることを特徴とする電子機器。
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JPWO2020189699A1 (ja) * | 2019-03-20 | 2021-12-09 | 株式会社村田製作所 | 伝送路基板、および伝送路基板の実装構造 |
JP7160180B2 (ja) | 2019-03-20 | 2022-10-25 | 株式会社村田製作所 | 伝送路基板、および伝送路基板の実装構造 |
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