JP2017045938A - Substrate processing apparatus and discharge head - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of suppressing the amount of protective solution used, while ensuring a protective solution film having a predetermined thickness in the liquid contact region on the substrate, and a discharge head.SOLUTION: A lower opening 51 of a cylindrical member 50 includes a first liquid contact region 55 and a second liquid contact region 65, in the horizontal plane view, and is in close proximity with the upper surface of a substrate W across a gap 101. When the cylindrical member 50 blocks a protective solution supplied from a protective solution nozzle 6, a first liquid membrane 63 is formed on the first liquid contact region 55, and the first liquid membrane 63 becomes thicker than a second liquid membrane 64. Consequently, the first liquid membrane 63 of a predetermined thickness can be formed reliably on the first liquid contact region 55, while reducing the amount of protective solution used in cleaning processing.SELECTED DRAWING: Figure 6

Description

  The present invention relates to a substrate processing apparatus and a discharge head for processing a substrate. Examples of substrates to be processed include semiconductor wafers, liquid crystal display substrates, plasma display substrates, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, and photomasks. Substrate, ceramic substrate, solar cell substrate and the like.

  In a manufacturing process of a semiconductor device, a liquid crystal display device, or the like, a process using a processing liquid is performed on a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display device. For example, a substrate processing apparatus described in Patent Document 1 includes a spin chuck that horizontally holds and rotates a substrate, a droplet nozzle that causes a droplet of a processing liquid to collide with the upper surface of the substrate held by the spin chuck, And a protective liquid nozzle that discharges the protective liquid toward the upper surface of the substrate held by the spin chuck.

  In this substrate processing apparatus, after forming a protective liquid film on the upper surface of the substrate, the droplets of the processing liquid ejected from the liquid droplet nozzle collide with the liquid deposition region (first liquid deposition region described later) on the upper surface of the substrate. Then, the deposits attached to the landing area are removed (that is, the substrate is washed).

  During the cleaning process, when the film thickness of the protective liquid film formed in the liquid deposition region is smaller than the first threshold value indicating the lower limit of the allowable range, the liquid droplets of the processing liquid discharged from the liquid droplet nozzles are protected liquid. There is a possibility that the device formed in the liquid landing region of the substrate is destroyed by strongly colliding with the liquid landing region of the substrate without being sufficiently interfered by the film. On the other hand, when the film thickness of the protective liquid film is larger than the second threshold value indicating the upper limit of the allowable range during the cleaning process, the liquid droplets of the processing liquid discharged from the liquid droplet nozzle are more than necessary by the protective liquid film. There is a possibility that the liquid landing area of the substrate cannot be sufficiently cleaned because of buffering. Therefore, it is desirable that a protective liquid film having a predetermined film thickness in the range from the first threshold value to the second threshold value is formed in the liquid deposition region.

JP 2012-216777 A JP 2011-9602 A

  However, it is not easy to secure a protective liquid film having a predetermined film thickness in the liquid landing region on the substrate because of the influence of centrifugal force accompanying the rotation of the substrate and the influence of collision between the processing liquid and the protective liquid. .

  Therefore, Patent Document 2 discloses a technique in which the protective liquid is dammed by a dam provided around the substrate, a protective liquid film is formed on the entire surface of the substrate, and then a droplet of the processing liquid is discharged from the droplet nozzle. Has been. According to this technique, it is possible to secure a protective liquid film having a predetermined thickness on the entire surface including the liquid deposition region.

  However, in the technique of Patent Document 2, in order to secure a protective liquid film having a predetermined film thickness on the entire surface of the substrate as well as a liquid deposition region where it is necessary to ensure a protective liquid film having a predetermined film thickness, The new subject that the usage-amount of a liquid increases arises.

  The present invention has been made to solve these problems, and a substrate processing apparatus and a discharge device capable of suppressing the amount of use of a protective liquid while ensuring a protective liquid film having a predetermined film thickness in a liquid deposition region on the substrate. The object is to provide a head.

  A substrate processing apparatus according to a first aspect of the present invention includes a substrate holder that holds a substrate horizontally, and a plurality of treatment liquids in a first liquid deposition region on the upper surface of the substrate held by the substrate holder. A first nozzle that discharges droplets; a second nozzle that is attached to the first nozzle and that discharges a protective liquid to a second liquid deposition region on the upper surface of the substrate held by the substrate holder; and above the substrate A cylindrical member that accommodates the discharge ports of the first nozzle and the second nozzle, and a lower opening of the cylindrical member includes the first and second liquid-receiving regions in a horizontal plan view. And a cylindrical member holding part for holding the cylindrical member in a state where the lower opening is close to the upper surface of the substrate with a gap therebetween, and the second nozzle discharges the protective liquid. By the inside of the tubular member on the substrate. A first liquid film of the protective liquid is formed on the substrate, and a second liquid film of the protective film is formed on the upper surface of the substrate outside the cylindrical member from which the protective liquid has flowed out through the gap. One liquid film is thicker than the second liquid film.

  A substrate processing apparatus according to a second aspect of the present invention is the substrate processing apparatus according to the first aspect of the present invention, comprising a lid member that covers an upper opening of the cylindrical member, and the first nozzle and The second nozzle is provided through the lid member, and has a discharge port below the lid member.

  A substrate processing apparatus according to a third aspect of the present invention is the substrate processing apparatus according to the first aspect or the second aspect of the present invention, wherein the second nozzle travels along an inner wall of the cylindrical member. The protective liquid is supplied to the upper surface of the substrate.

  A substrate processing apparatus according to a fourth aspect of the present invention is the substrate processing apparatus according to any one of the first to third aspects of the present invention, and is a cylindrical member elevating unit that elevates and lowers the cylindrical member. It is characterized by providing.

  A substrate processing apparatus according to a fifth aspect of the present invention is the substrate processing apparatus according to the fourth aspect of the present invention, and includes a first nozzle lifting / lowering part that lifts and lowers the first nozzle, and a lifting / lowering of the second nozzle. A second nozzle lifting part, and the cylindrical member lifting part, the first nozzle lifting part, and the second nozzle lifting part can be driven independently of each other.

  A substrate processing apparatus according to a sixth aspect of the present invention is the substrate processing apparatus according to the fourth aspect or the fifth aspect of the present invention, comprising: a detection unit that detects the film thickness of the first liquid film; It is characterized by providing.

  A substrate processing apparatus according to a seventh aspect of the present invention is the substrate processing apparatus according to any one of the first to fifth aspects of the present invention, wherein the cylindrical member has a side surface at a certain height position. At least one opening is provided.

  A substrate processing apparatus according to an eighth aspect of the present invention is the substrate processing apparatus according to any one of the first to seventh aspects of the present invention, wherein the first nozzle includes a gas, the processing liquid, and the like. It is a two-fluid type nozzle that mixes and discharges.

  A substrate processing apparatus according to a ninth aspect of the present invention is the substrate processing apparatus according to any one of the first to seventh aspects of the present invention, wherein the first nozzle supplies the processing liquid to an ink jet system. The nozzle is characterized in that it is a nozzle that ejects fine droplets.

  A substrate processing apparatus according to a tenth aspect of the present invention is the substrate processing apparatus according to any one of the first to ninth aspects of the present invention, wherein the first nozzle, the second nozzle, and A horizontal moving unit that integrally moves the cylindrical member in a horizontal direction; a substrate rotating unit that rotates the substrate held by the substrate holding unit around an axis extending in the vertical direction through the center of the substrate; It is characterized by providing.

  An ejection head according to an eleventh aspect of the present invention is an ejection head for ejecting liquid onto the upper surface of a horizontally held substrate, and ejects a plurality of droplets of a processing liquid downward. A nozzle, a second nozzle that is attached to the first nozzle and discharges the protective liquid downward, and stores the discharge ports of the first nozzle and the second nozzle, and are spaced downward from these discharge ports. And a cylindrical member having a lower opening at a position.

  In the first aspect to the tenth aspect of the present invention, the lower opening of the cylindrical member includes the first and second landing areas in a horizontal plan view, and the lower opening is spaced from the upper surface of the substrate with a gap. It is close. The cylindrical member dams up the protective liquid supplied from the second nozzle, thereby forming a first liquid film of the protective liquid formed inside the cylindrical member. It becomes thicker than the film thickness of the second liquid film formed outside the shaped member.

  Therefore, in the first aspect to the tenth aspect of the present invention, compared to other aspects in which a liquid film of the protective liquid is formed on the upper surface of the substrate only by supplying the protective liquid without using the cylindrical member. A first liquid film having a predetermined film thickness can be reliably formed on one liquid deposition region. Further, in the first aspect to the tenth aspect of the present invention in which the protective liquid is dammed in the cylindrical member, the protective liquid in the cleaning process is not compared with other aspects in which the protective liquid is not dammed by the cylindrical member. The amount used can be reduced.

  The discharge head according to the eleventh aspect of the present invention is suitably used in the substrate processing apparatus according to the first to tenth aspects of the present invention.

FIG. 1 is a schematic diagram showing a schematic configuration of a substrate processing apparatus. FIG. 2 is a plan view showing the configuration of the ejection head and its peripheral part. FIG. 3 is a longitudinal sectional view showing the configuration of the ejection head and its peripheral part. FIG. 4 is a longitudinal sectional view showing the configuration of the ejection head and its peripheral part. FIG. 5 is a longitudinal sectional view showing the configuration of the ejection head and its peripheral part. FIG. 6 is a longitudinal sectional view showing the configuration of the ejection head and its peripheral part. FIG. 7 is a longitudinal sectional view showing the configuration of the ejection head and its peripheral part in the second embodiment. FIG. 8 is a longitudinal sectional view showing the configuration of the ejection head and its peripheral part in the third embodiment.

<1 First Embodiment>
<1.1 Configuration of Substrate Processing Apparatus 1>
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

  FIG. 1 is a schematic diagram showing a schematic configuration of the substrate processing apparatus 1. FIG. 2 is a top view of the ejection head 100 and a configuration related thereto. FIG. 3 is a longitudinal sectional view showing the ejection head 100 and its peripheral part.

  The substrate processing apparatus 1 is a single-wafer type substrate processing apparatus that processes a disk-shaped substrate W such as a semiconductor wafer one by one. The substrate processing apparatus 1 supplies a rinsing liquid to a spin chuck 2 (substrate holding unit, substrate rotating unit) that rotates while holding the substrate W horizontally, a cylindrical cup 3 that surrounds the spin chuck 2, and the substrate W. A rinse liquid nozzle 4, a discharge head 100 that supplies a processing liquid and a protective liquid to the substrate W, and a control device 7 that controls the operation of the apparatus provided in the substrate processing apparatus 1 such as the spin chuck 2 and the opening and closing of the valve. I have.

  The spin chuck 2 holds a substrate W horizontally and can rotate about a vertical rotation axis L1 passing through the center C1 of the substrate W, and a spin motor that rotates the spin base 8 about the rotation axis L1. 9 and the like. The spin chuck 2 may be a holding chuck that horizontally holds the substrate W while holding the substrate W in a horizontal direction, or by adsorbing the back surface (lower surface) of the substrate W that is a non-device forming surface. A vacuum chuck that holds the substrate W horizontally may be used. In the first embodiment, the spin chuck 2 is a clamping chuck.

  The rinse liquid nozzle 4 is connected to a rinse liquid supply pipe 11 in which a rinse liquid valve 10 is interposed. When the rinse liquid valve 10 is opened, the rinse liquid is discharged from the rinse liquid nozzle 4 toward the center of the upper surface of the substrate W. On the other hand, when the rinse liquid valve 10 is closed, the discharge of the rinse liquid from the rinse liquid nozzle 4 is stopped. As the rinsing liquid supplied to the rinsing liquid nozzle 4, pure water (deionized water), carbonated water, electrolytic ionic water, hydrogen water, ozone water, hydrochloric acid water having a diluted concentration (for example, about 10 to 100 ppm), etc. It can be illustrated.

  The discharge head 100 includes a droplet nozzle 5 (first nozzle) that discharges a plurality of liquid droplets of the processing liquid downward, and a protective liquid nozzle 6 that is attached to the droplet nozzle 5 and discharges the protective liquid downward. (Second nozzle), a cylindrical member 50 having a plurality of discharge ports 32 of the droplet nozzle 5 and a discharge port 62 of the protective liquid nozzle 6 and having a lower opening 51 at a position spaced downward from these discharge ports. And a detection unit 57 that detects the film thickness of the liquid film formed in the cylindrical member 50.

The droplet nozzle 5 is an inkjet nozzle that ejects the processing liquid by atomizing it with an inkjet method. The droplet nozzle 5 is connected to the processing liquid supply mechanism 13 via the processing liquid supply pipe 12. Further, the droplet nozzle 5 is connected to a processing liquid discharge pipe 15 in which a discharge valve 14 is interposed. The processing liquid supply mechanism 13 includes, for example, a pump. The processing liquid supply mechanism 13 always supplies the processing liquid to the droplet nozzle 5 at a predetermined pressure (for example, 10 MPa or less). Examples of the processing liquid supplied to the droplet nozzle 5 include pure water, carbonated water, and SC-1 (mixed liquid containing NH ₄ OH and H ₂ O ₂ ). The control device 7 can change the pressure of the processing liquid supplied to the droplet nozzle 5 to an arbitrary pressure by controlling the processing liquid supply mechanism 13.

  The droplet nozzle 5 includes a piezoelectric element 16 (piezo element) disposed inside the droplet nozzle 5. The piezoelectric element 16 is connected to the voltage application mechanism 18 via the wiring 17. The voltage application mechanism 18 includes, for example, an inverter. The voltage application mechanism 18 applies an alternating voltage to the piezoelectric element 16. When an AC voltage is applied to the piezoelectric element 16, the piezoelectric element 16 vibrates at a frequency corresponding to the frequency of the applied AC voltage. The control device 7 can change the frequency of the AC voltage applied to the piezoelectric element 16 to an arbitrary frequency (for example, several hundred KHz to several MHz) by controlling the voltage application mechanism 18. Therefore, the frequency of vibration of the piezoelectric element 16 is controlled by the control device 7.

  The droplet nozzle 5 includes a main body 26 that discharges droplets of the processing liquid, a cover 27 that covers the main body 26, the piezoelectric element 16 that is covered with the cover 27, and a seal 28 that is interposed between the main body 26 and the cover 27. Including. The main body 26 and the cover 27 are both made of a material having chemical resistance. The main body 26 is made of, for example, quartz. The cover 27 is made of, for example, a fluorine resin. The seal 28 is made of an elastic material such as EPDM (ethylene-propylene-diene rubber). The main body 26 has a strength that can withstand high pressure. A part of the main body 26 and the piezoelectric element 16 are accommodated in the cover 27. The end of the wiring 17 is connected to the piezoelectric element 16 inside the cover 27 by, for example, solder. The inside of the cover 27 is sealed with a seal 28.

  The main body 26 includes a supply port 29 to which a processing liquid is supplied, a discharge port 30 that discharges the processing liquid supplied to the supply port 29, a processing liquid flow passage 31 that connects the supply port 29 and the discharge port 30, And a plurality of discharge ports 32 connected to the processing liquid flow passage 31. The processing liquid flow passage 31 is provided inside the main body 26. The supply port 29, the discharge port 30, and the discharge port 32 are opened on the surface of the main body 26. The supply port 29 and the discharge port 30 are located above the discharge port 32. The lower surface 5 a of the main body 26 is, for example, a horizontal flat surface, and the discharge port 32 opens at the lower surface 5 a of the main body 26. The discharge port 32 is a fine hole having a diameter of several μm to several tens of μm, for example. The processing liquid supply pipe 12 and the processing liquid discharge pipe 15 are connected to a supply port 29 and a discharge port 30, respectively.

  The processing liquid supply mechanism 13 always supplies the processing liquid to the droplet nozzle 5 at a high pressure. The processing liquid supplied from the processing liquid supply mechanism 13 to the supply port 29 via the processing liquid supply pipe 12 is supplied to the processing liquid flow passage 31. In the state where the discharge valve 14 is closed, the pressure (liquid pressure) of the processing liquid in the processing liquid flow passage 31 is high. Therefore, when the discharge valve 14 is closed, the processing liquid is discharged from each discharge port 32 by liquid pressure. Further, when an AC voltage is applied to the piezoelectric element 16 with the discharge valve 14 being closed, the vibration of the piezoelectric element 16 is imparted to the processing liquid flowing through the processing liquid flow path 31 and discharged from each discharge port 32. The treated liquid is divided by this vibration. Therefore, when an alternating voltage is applied to the piezoelectric element 16 with the discharge valve 14 being closed, a droplet of the processing liquid is discharged from each discharge port 32. As a result, a large number of droplets of processing liquid having a uniform particle size are simultaneously ejected at a uniform speed.

  On the other hand, in a state where the discharge valve 14 is open, the processing liquid supplied to the processing liquid flow passage 31 is discharged from the discharge port 30 to the processing liquid discharge pipe 15. That is, in the state where the discharge valve 14 is opened, the liquid pressure in the treatment liquid flow passage 31 is not sufficiently increased, so that the treatment liquid supplied to the treatment liquid flow passage 31 is discharged from each discharge port having a small diameter. Without being discharged from 32, it is discharged from the discharge port 30 to the processing liquid discharge pipe 15. Therefore, the discharge of the processing liquid from each discharge port 32 is controlled by opening and closing the discharge valve 14. The control device 7 opens the discharge valve 14 while the droplet nozzle 5 is not used for processing the substrate W (while the droplet nozzle 5 is on standby). Therefore, even when the droplet nozzle 5 is on standby, the state where the processing liquid is circulating inside the droplet nozzle 5 is maintained.

  When the treatment liquid droplets collide with the upper surface of the substrate W, the control device 7 moves the ejection head 100 by the moving mechanism 19, so that the lower surface 5 a of the droplet nozzle 5 (the lower surface 5 a of the main body 26) is moved to the substrate. Close to the upper surface of W. Then, the control device 7 closes the discharge valve 14 to increase the pressure of the processing liquid flow path 31 and drives the piezoelectric element 16 with the lower surface 5a of the droplet nozzle 5 facing the upper surface of the substrate W. By doing so, vibration is applied to the processing liquid in the processing liquid flow passage 31. As a result, a large number of droplets of processing liquid having a uniform particle size are simultaneously ejected at a uniform speed. A large number of liquid droplets discharged from the discharge port 32 of the liquid droplet nozzle 5 collide with the first liquid deposition region 55 on the upper surface of the substrate W. Due to this collision, the adhering matter adhering to the first landing region 55 of the substrate W is removed (in other words, the first landing region 55 of the substrate W is washed).

  The protective liquid nozzle 6 is provided alongside the droplet nozzle 5. The protective liquid nozzle 6 is connected to a protective liquid supply pipe 25 in which a protective liquid valve 23 and a flow rate adjusting valve 24 are interposed. When the protective liquid valve 23 is opened, the protective liquid is discharged from the protective liquid nozzle 6 toward the upper surface of the substrate W. On the other hand, when the protective liquid valve 23 is closed, the discharge of the protective liquid from the protective liquid nozzle 6 is stopped. The discharge speed of the protective liquid from the protective liquid nozzle 6 is changed by the control device 7 adjusting the opening degree of the flow rate adjusting valve 24. Examples of the protective liquid supplied to the protective liquid nozzle 6 include a rinse liquid and a chemical liquid such as SC-1.

  The protective liquid nozzle 6 has one discharge port 62 for discharging the protective liquid. The diameter of the discharge port 62 is larger than the diameter of each discharge port 32, and the protective liquid discharged from the discharge port 62 of the protective liquid nozzle 6 is deposited on the second liquid deposition region 65 on the upper surface of the substrate W. In the cleaning process to be described later, prior to the discharge of the treatment liquid droplets from the droplet nozzle 5, the protection liquid is discharged from the protection liquid nozzle 6, and the protection liquid is preliminarily placed in a range including the first liquid deposition region 55. A liquid film is formed. As a result, the liquid film plays a role of buffering the collision between the droplet of the processing liquid and the first liquid deposition region 55, and deposits adhering to the device are protected while protecting the device formed on the upper surface of the substrate W. Removed.

  The cylindrical member 50 is configured by a cylindrical member (for example, a cylindrical member having a diameter of 80 mm) having openings above and below, respectively. The cylindrical member 50 is provided above the substrate W held by the spin chuck 2 and accommodates the plurality of discharge ports 32 of the droplet nozzle 5 and the discharge ports 62 of the protective liquid nozzle 6. The upper opening of the cylindrical member 50 is covered with a lid member 52, and the droplet nozzle 5 and the protective liquid nozzle 6 are provided so as to penetrate the lid member 52 in the vertical direction and have a discharge port below the lid member 52. . The edge constituting the lower opening 51 of the cylindrical member 50 is flat along the horizontal plane, and when the lower opening 51 of the cylindrical member 50 is opposed to the upper surface of the substrate W, the substrate W, the cylindrical member 50, The separation distance is uniform. Each of the droplet nozzle 5, the protective liquid nozzle 6, and the cylindrical member 50 may be configured to be movable integrally, or may be configured to be independently movable. Hereinafter, the droplet nozzle 5 and the protective liquid nozzle 6 are fixed to the cylindrical member 50, and the droplet nozzle 5, the protective liquid nozzle 6, and the cylindrical member 50 are moved together by a moving mechanism 19 described later. The configuration to be performed will be described.

  The detection unit 57 is a part that detects the film thickness of the liquid film formed in the cylindrical member 50, and is electrically connected to the control device 7. The detection part 57 is comprised by the laser length measuring device, for example. The control device 7 controls driving of the moving mechanism 19 to be described later based on the detection result by the detection unit 57.

  The substrate processing apparatus 1 further includes an arm 20 that holds the cylindrical member 50 and a moving mechanism 19 that moves the arm 20 in the horizontal direction or the vertical direction.

  In the arm 20 (cylindrical member holding portion), the lower opening 51 includes the first liquid receiving area 55 and the second liquid receiving area 65 in a horizontal view, and the lower opening 51 is close to the upper surface of the substrate W with a gap 101 therebetween. In this state, the cylindrical member 50 is held. Since the droplet nozzle 5 and the protective liquid nozzle 6 are fixed to the cylindrical member 50 as described above, the ejection head 100 is moved in accordance with the movement of the arm 20 that holds the cylindrical member 50.

  The moving mechanism 19 includes a turning mechanism 21 connected to the arm 20 and an elevating mechanism 22 connected to the turning mechanism 21. The rotation mechanism 21 includes, for example, a motor. The elevating mechanism 22 includes, for example, a ball screw mechanism and a motor that drives the ball screw mechanism. The rotation mechanism 21 rotates the arm 20 around a vertical rotation axis L2 provided around the spin chuck 2. As the arm 20 rotates, the ejection head 100 also rotates around the rotation axis L2 and moves in the horizontal direction. The raising / lowering mechanism 22 raises / lowers the rotating mechanism 21 in the vertical direction. As the rotating mechanism 21 moves up and down, the arm 20 and the ejection head 100 also move up and down along the vertical direction.

  As shown in FIG. 2, the rotation mechanism 21 (horizontal movement unit) moves the ejection head 100 horizontally along an arcuate locus X1 extending along the upper surface of the substrate W held by the spin chuck 2. The locus X1 is a curve that connects two positions that do not overlap the upper surface of the substrate W in a horizontal plan view and passes through the center C1 of the upper surface of the substrate W.

<1.2 Operation of Substrate Processing Apparatus 1>
4 to 6 are longitudinal sectional views showing the ejection head 100 and the peripheral portion in each process of substrate processing.

  The unprocessed substrate W is transported by a transport robot (not shown) and placed on the spin chuck 2 with the surface, which is a device formation surface, facing up. Then, the control device 7 holds the substrate W by the spin chuck 2. Thereafter, the control device 7 controls the spin motor 9 to rotate the substrate W held on the spin chuck 2.

  Next, a process of supplying a rinsing liquid (for example, pure water) from the rinsing liquid nozzle 4 to the substrate W and covering the upper surface of the substrate W with pure water is performed. Specifically, the control device 7 opens the rinse liquid valve 10 while rotating the substrate W by the spin chuck 2, and moves from the rinse liquid nozzle 4 toward the center of the upper surface of the substrate W held by the spin chuck 2. To discharge pure water. The pure water discharged from the rinsing liquid nozzle 4 is supplied to the central portion of the upper surface of the substrate W, and spreads outward along the upper surface of the substrate W under the centrifugal force due to the rotation of the substrate W. Thus, pure water is supplied to the entire upper surface of the substrate W, and a liquid film of pure water is formed to cover the entire upper surface of the substrate W. When a predetermined time elapses after the rinsing liquid valve 10 is opened, the control device 7 closes the rinsing liquid valve 10 and stops the discharge of pure water from the rinsing liquid nozzle 4.

  Next, a protective liquid (for example, SC-1 liquid) is supplied to the substrate W from the protective liquid nozzle 6 to form a first liquid film 63 of the protective liquid on the upper surface of the substrate W inside the cylindrical member 50. A film forming step is performed. Specifically, the control device 7 opens the protective liquid valve 23 and the flow rate adjustment valve 24 while rotating the substrate W by the spin chuck 2, so that the substrate W held on the spin chuck 2 from the protective liquid nozzle 6 is opened. The protective liquid is discharged toward the upper surface. Further, the control device 7 lowers the ejection head 100 by the elevating mechanism 22 so that the gap 101 has a sufficiently short interval (for example, 0.2 mm). Thereby, the first liquid film 63 is formed in the cylindrical member 50 in a short time. Further, the second liquid film 64 is formed on the upper surface of the substrate W outside the cylindrical member 50 from which the protective liquid has flowed out through the gap 101. Since the cylindrical member 50 plays a role of blocking the protective liquid supplied from the protective liquid nozzle 6, the film thickness of the first liquid film 63 is larger than the film thickness of the second liquid film 64. FIG. 4 is a longitudinal sectional view showing the ejection head 100 and the peripheral portion at this point.

  When the detection unit 57 detects that the film thickness of the first liquid film 63 has reached a predetermined film thickness (for example, 0.8 mm), the controller 7 cleans the gap 101 with the lifting mechanism 22. The ejection head 100 is raised so that an interval suitable for processing (for example, 0.6 mm) is obtained. FIG. 5 is a longitudinal sectional view showing the ejection head 100 and the peripheral portion at this point. Then, the cleaning process is started.

  In the cleaning process, a droplet of a processing liquid (for example, carbonated water) is supplied from the droplet nozzle 5 to the substrate W, and a deposit attached to the upper surface of the substrate W due to collision with the droplet is removed. The liquid film forming step described above is executed in parallel. Specifically, the control device 7 opens the protective liquid valve 23 and the flow rate adjustment valve 24 while rotating the substrate W by the spin chuck 2, so that the substrate W held on the spin chuck 2 from the protective liquid nozzle 6 is opened. The protective liquid is discharged toward the upper surface. In addition, the control device 7 closes the discharge valve 14 while performing each control for executing the above-described liquid film forming step, and applies an alternating voltage of a predetermined frequency to the piezoelectric element of the droplet nozzle 5 by the voltage application mechanism 18. 16 is applied. Further, the control device 7 causes the moving mechanism 19 to reciprocate the discharge head 100 a plurality of times along the locus X1 between the center position Pc and the peripheral position Pe (half scan). As shown by a solid line in FIG. 2, the center position Pc is a position where the ejection head 100 and the center of the upper surface of the substrate W overlap in a plan view, and as shown by a two-dot chain line in FIG. This is a position where the ejection head 100 and the peripheral edge of the upper surface of the substrate W overlap in plan view.

  When a large number of droplets of carbonated water are discharged downward from the droplet nozzle 5, a large number of carbonated water droplets are applied to the first liquid deposition region 55 covered with the first liquid film 63 of SC-1. Be sprayed. Further, since the control device 7 moves the ejection head 100 between the center position Pc and the peripheral position Pe while rotating the substrate W, the upper surface of the substrate W is scanned by the first liquid deposition region 55, and the first The landing area 55 passes through the entire upper surface of the substrate W. Accordingly, carbonated water droplets are sprayed over the entire upper surface of the substrate W. Foreign substances such as particles adhering to the upper surface of the substrate W are physically removed by the collision of the droplets with the substrate W. Further, the bonding force between the foreign matter and the substrate W is weakened by the SC-1 dissolving the substrate W. Therefore, foreign matters are more reliably removed. Further, since the carbonated water droplets are sprayed onto the first liquid deposition region 55 in a state where the entire upper surface of the substrate W is covered with the liquid film, the reattachment of foreign matters to the substrate W is suppressed or prevented. FIG. 6 is a longitudinal sectional view showing the ejection head 100 and the peripheral portion at this point.

  When the film thickness of the first liquid film 63 is smaller than a first threshold value (for example, 0.6 mm) indicating the lower limit of the allowable range during the cleaning process (cleaning process and liquid film forming process), the droplets The liquid droplets of the processing liquid discharged from the nozzle 5 strongly collide with the first liquid deposition region 55 of the substrate W without being sufficiently interfered by the first liquid film 63, and the device formed on the upper surface of the substrate W is destroyed. May occur. On the other hand, during the cleaning process, when the film thickness of the first liquid film 63 is larger than a second threshold value (for example, 1.0 mm) indicating the upper limit of the allowable range, the processing liquid discharged from the droplet nozzle 5 The liquid droplets are buffered more than necessary by the first liquid film 63, and there is a possibility that the first liquid deposition region 55 on the upper surface of the substrate W cannot be sufficiently cleaned. Therefore, it is desirable that the film thickness of the first liquid film 63 is always maintained between the first threshold value and the second threshold value during the cleaning process.

  Therefore, during the cleaning process, an adjustment process is performed to adjust the film thickness of the first liquid film 63 between the first threshold value and the second threshold value based on the detection result of the detection unit 57. Specifically, the control device 7 controls the flow rate adjustment valve 24 based on the detection result of the detection unit 57, and when the film thickness based on the detection result is close to the first threshold, the flow rate of the protective liquid is increased. When the film thickness according to the detection result is close to the second threshold value, the flow rate of the protective liquid is decreased. As a result, the film thickness of the first liquid film 63 is kept within an allowable range in the cleaning process.

  When the cleaning process is performed for a predetermined time, the control device 7 opens the discharge valve 14 and stops the discharge of the droplets from the droplet nozzle 5. Further, the control device 7 closes the protective liquid valve 23 and stops the discharge of SC-1 from the protective liquid nozzle 6. Further, the control device 7 retracts the ejection head 100 to the side of the substrate W.

  Next, a rinsing process is performed in which a rinsing liquid (for example, pure water) is supplied from the rinsing liquid nozzle 4 to the substrate W to wash away the liquid and foreign matters adhering to the substrate W. Specifically, the control device 7 opens the rinsing liquid valve 10 while rotating the substrate W by the spin chuck 2, and moves from the rinsing liquid nozzle 4 toward the center of the upper surface of the substrate W held by the spin chuck 2. To discharge pure water. The pure water discharged from the rinsing liquid nozzle 4 is supplied to the central portion of the upper surface of the substrate W, and spreads outward along the upper surface of the substrate W under the centrifugal force due to the rotation of the substrate W. Thereby, pure water is supplied to the entire upper surface of the substrate W, and the liquid and foreign matters adhering to the substrate W are washed away. When a predetermined time elapses after the rinsing liquid valve 10 is opened, the control device 7 closes the rinsing liquid valve 10 and stops the discharge of pure water from the rinsing liquid nozzle 4.

  Next, a drying process for drying the substrate W is performed. Specifically, the control device 7 controls the spin motor 9 to rotate the substrate W at a high rotation speed (for example, several thousand rpm). As a result, a large centrifugal force acts on the pure water adhering to the substrate W, and the pure water adhering to the substrate W is shaken off around the substrate W. In this way, pure water is removed from the substrate W, and the substrate W is dried. Then, after the drying process is performed for a predetermined time, the control device 7 controls the spin motor 9 to stop the rotation of the substrate W by the spin chuck 2. Thereafter, the processed substrate W is unloaded from the spin chuck 2 by the transfer robot.

<1.3 Effect>
As described above, in the first embodiment, the lower opening 51 of the cylindrical member 50 includes the first landing area 55 and the second landing area 65 in the horizontal plan view, and the lower opening 51 separates the gap 101 and the substrate. Close to the top surface of W. The tubular member 50 dams up the protective liquid supplied from the protective liquid nozzle 6, whereby a first liquid film 63 of the protective liquid is formed on the first liquid deposition region 55, and the film of the first liquid film 63 is formed. The thickness is greater than the thickness of the second liquid film 64.

  Therefore, in the aspect of the first embodiment, the first liquid deposition region is compared with other aspects in which the liquid film of the protective liquid is formed on the upper surface of the substrate W only by supplying the protective liquid without using the cylindrical member 50. The first liquid film 63 having a predetermined film thickness can be reliably formed on 55. Moreover, in the aspect of 1st Embodiment which dams a protective liquid in the cylindrical member 50, the usage-amount of the protective liquid in a washing | cleaning process can be reduced compared with the said other aspect which does not dam the protective liquid. For example, in the case of performing the cleaning process for 1 minute, 2.0 liters of protective liquid is used in the above-described other aspects, whereas 0.5 liter of protective liquid is sufficient in the aspect of the first embodiment.

  In the first embodiment, a lid member 52 that covers the upper opening of the tubular member 50 is provided, and the ejection head 100 opens only downward. Therefore, even if the protective liquid or the treatment liquid droplet collides in the cylindrical member 50, the liquid splash due to the collision is prevented from scattering to each part of the substrate processing apparatus 1.

  Further, in the first embodiment, the protective liquid nozzle 6 is provided in contact with the inner wall of the cylindrical member 50, and the protective liquid nozzle 6 travels along the inner wall of the cylindrical member 50 and applies the protective liquid to the upper surface of the substrate W. Supply. For this reason, in the aspect of 1st Embodiment, the surface of the 1st liquid film 63 has the surface of the 1st liquid film 63 compared with the other aspect in which the protective liquid nozzle 6 supplies a protective liquid to the upper surface of the board | substrate W, without passing along the inner wall of the cylindrical member 50. Rippling is suppressed. When the surface of the first liquid film 63 undulates, the film thickness of the first liquid film 63 is not determined at the undulation location, and the film thickness is smaller than the first threshold value or the film thickness is larger than the second threshold value. Can occur. In the aspect of the first embodiment, it is desirable that the surface of the first liquid film 63 has a corrugated first liquid film 63 whose film thickness is outside the allowable range, and that the adverse effect of the cleaning process does not easily occur.

  In the first embodiment, a detection unit 57 that detects the film thickness of the first liquid film 63 is provided, and the control device 7 adjusts the opening degree of the flow rate adjustment valve 24 based on the detection result of the detection unit 57. To do. Thereby, the film thickness of the first liquid film 63 is appropriately maintained between the first threshold value and the second threshold value.

<2 Second Embodiment>
FIG. 7 is a longitudinal sectional view showing the configuration of the ejection head 100A in the second embodiment.

  Hereinafter, the ejection head 100A of the second embodiment will be described with reference to FIG. 7, but the same elements as those of the first embodiment are denoted by the same reference numerals, and redundant description will be omitted.

  The substrate processing apparatus of the second embodiment is different from the substrate processing apparatus 1 of the first embodiment mainly with respect to the configuration of the ejection head. Hereinafter, this difference will be mainly described.

  In the ejection head 100A of the second embodiment, at least one opening 58 is provided at a certain height position on the side surface of the cylindrical member 50A. On the side surface of the cylindrical member 50A, for example, ten openings 58 are provided at equal intervals along the circumferential direction of the cylindrical cylindrical member 50A in a horizontal plane view. In FIG. 7, only two of the ten openings 58 are shown.

  In the second embodiment, first, the cylinder D is set so that the height D3 from the upper surface of the substrate W to the lower end position of each opening 58 substantially matches the value obtained by dividing the sum of the first threshold value D1 and the second threshold value D2 by 2. The shaped member 50A is moved up and down. Then, a cleaning process is performed in which the protective liquid nozzle 6 discharges the protective liquid and the droplet nozzle 5 discharges the treatment liquid droplets.

  In the aspect of the second embodiment, when the film thickness of the first liquid film 63 reaches the height D3 or more during the cleaning process, the protective liquid in the cylindrical member 50A flows out from the opening 58 to the outside. The film thickness of the first liquid film 63 is kept between the first threshold value D1 and the second threshold value D2 (that is, the allowable range of film thickness in the cleaning process).

  Thus, in the aspect of the second embodiment, unlike the aspect of the first embodiment in which the thickness of the first liquid film 63 falls within the allowable range by electrically controlling the detection unit 57 and the flow rate adjustment valve 24, The film thickness of the first liquid film 63 can be within an allowable range with a simpler configuration.

<3 Third Embodiment>
FIG. 8 is a longitudinal sectional view showing the configuration of the ejection head 100B in the third embodiment.

  Hereinafter, the ejection head 100B of the third embodiment will be described with reference to FIG. 8, but the same elements as those of the first embodiment are denoted by the same reference numerals, and redundant description will be omitted.

  The substrate processing apparatus of the third embodiment is different from the substrate processing apparatus 1 of the first embodiment mainly with respect to the configuration of the ejection head. Hereinafter, this difference will be mainly described.

  A discharge head 100B according to the third embodiment has a two-fluid type droplet nozzle 120 that mixes and discharges a processing liquid and a gas instead of the inkjet type droplet nozzle 5 in the discharge head 100 according to the first embodiment. Prepare.

  The droplet nozzle 120 includes a discharge unit 121 that mixes and discharges gas and liquid, a processing liquid supply pipe 122 that supplies the processing liquid supplied from the processing liquid supply mechanism 13 to the discharge unit 121, and a gas (not shown). A gas supply pipe 123 that supplies gas (for example, nitrogen) supplied from the supply mechanism to the discharge unit 121.

  Also in the third embodiment, as in the case of the first embodiment, discharge of the protective liquid by the protective liquid nozzle 6 is first executed, and the first liquid film 63 is formed in the cylindrical member 50. Thereafter, a cleaning process is performed in which the protective liquid nozzle 6 discharges the protective liquid and the liquid droplet nozzle 120 discharges the treatment liquid droplets.

  In the aspect of the third embodiment using the two-fluid droplet nozzle 120, the momentum of the droplet discharged toward the substrate W can be easily controlled by adjusting the flow rate of the gas mixed with the processing liquid. Can do. On the other hand, in the aspect of the first embodiment using the ink jet type droplet nozzle 5, unlike the aspect of the third embodiment using the two-fluid type droplet nozzle 120, an air flow is hardly generated in the vicinity of the nozzle outlet. . For this reason, in the aspect of 3rd Embodiment, the liquid droplet of a process liquid can be made to collide with the 1st liquid deposition area | region 55, suppressing the wave of the 1st liquid film 63 compared with the aspect of 1st Embodiment.

<4 Modification>
While the embodiments of the present invention have been described above, the present invention can be modified in various ways other than those described above without departing from the spirit of the present invention.

  The liquids such as the rinse liquid, the treatment liquid, and the protective liquid are not limited to those exemplified in the above embodiment, and various liquids can be applied.

  Moreover, although the said embodiment demonstrated the aspect (mode which the cylindrical member 50, the droplet nozzle 5, and the protective liquid nozzle 6 raise / lower integrally) that the discharge head 100 raises / lowers by the drive of the raising / lowering mechanism 22, It is not limited to this. The substrate processing apparatus includes a cylindrical member lifting / lowering unit that lifts and lowers the cylindrical member 50, a droplet nozzle lifting / lowering unit (first nozzle lifting / lowering unit) that lifts and lowers the droplet nozzle 5, and a protective liquid nozzle that lifts and lowers the protective liquid nozzle 6. An elevator unit (second nozzle elevator unit) may be provided, and the tubular member elevator unit, the treatment liquid nozzle elevator unit, and the droplet nozzle elevator unit may be driven independently of each other.

  Moreover, although the said embodiment demonstrated the aspect in which the cover member 52 which covers the upper opening of the cylindrical member 50 was provided and the discharge head opened only below, it is not restricted to this. The cover member 52 may not be provided, and the upper and lower sides of the cylindrical member 50 may be open.

  In the above embodiment, the protective liquid nozzle 6 supplies the protective liquid to the upper surface of the substrate W through the inner wall of the cylindrical member 50. However, the present invention is not limited to this. The protective liquid nozzle 6 may supply the protective liquid directly to the upper surface of the substrate W without passing along the inner wall of the cylindrical member 50.

  In the above embodiment, the flow rate adjustment valve 24 is feedback-controlled based on the detection result of the detection unit 57 to adjust the film thickness of the first liquid film 63, and the opening 58 is provided in the cylindrical member 50. Although the aspect which adjusts the film thickness of the 1st liquid film 63 was demonstrated by these, it is not restricted to these. For example, various parameters such as the flow rate of the protective liquid and the elevation position of the discharge head 100 are acquired in advance, and the thickness of the first liquid film 63 is adjusted by controlling each part based on these various parameters. Good.

  Moreover, although the said embodiment demonstrated the aspect in which the rinse liquid nozzle 4 was provided separately from the discharge head 100, the rinse liquid nozzle 4 is not an essential structure in a substrate processing apparatus.

  Although the substrate processing apparatus and the ejection head according to the embodiment and the modifications thereof have been described above, these are examples of the preferred embodiment of the present invention, and do not limit the scope of implementation of the present invention. Within the scope of the invention, the present invention can be freely combined with each embodiment, modified with any component in each embodiment, or omitted with any component in each embodiment.

DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 2 Spin chuck 3 Cup 4 Rinse liquid nozzle 5 Droplet nozzle 6 Protective liquid nozzle 7 Control apparatus 8 Spin base 19 Moving mechanism 20 Arm 50, 50A Cylindrical member 51 Lower opening 55 First liquid deposition area 57 Detection part 58 opening 63 first liquid film 64 second liquid film 65 second liquid deposition region 100, 100A, 100B discharge head 120 droplet nozzle W substrate

Claims (11)

A substrate holder for horizontally holding the substrate;
A first nozzle that discharges a plurality of droplets of a processing liquid to a first liquid deposition region on the upper surface of the substrate held by the substrate holding unit;
A second nozzle that is attached to the first nozzle and discharges a protective liquid to a second liquid deposition region on the upper surface of the substrate held by the substrate holding unit;
A cylindrical member that is provided above the substrate and accommodates the discharge ports of the first nozzle and the second nozzle;
The cylindrical member has a lower opening that includes the first and second liquid landing regions in a horizontal view, and the lower opening is close to the upper surface of the substrate with a gap therebetween. A cylindrical member holding portion for holding the member;
With
When the second nozzle discharges the protective liquid, a first liquid film of the protective liquid is formed on the upper surface of the substrate inside the cylindrical member, and the protective liquid flows out through the gap. A second liquid film of the protective liquid is formed on the upper surface of the substrate outside the cylindrical member;
The substrate processing apparatus, wherein the first liquid film is thicker than the second liquid film. The substrate processing apparatus according to claim 1,
A lid member covering the upper opening of the tubular member,
The substrate processing apparatus, wherein the first nozzle and the second nozzle are provided through the lid member and have a discharge port below the lid member. The substrate processing apparatus according to claim 1 or 2, wherein
The substrate processing apparatus, wherein the second nozzle supplies the protective liquid to an upper surface of the substrate along an inner wall of the cylindrical member. A substrate processing apparatus according to any one of claims 1 to 3,
A substrate processing apparatus comprising: a cylindrical member elevating unit configured to elevate and lower the cylindrical member. The substrate processing apparatus according to claim 4,
A first nozzle raising / lowering part for raising and lowering the first nozzle;
A second nozzle raising / lowering part for raising and lowering the second nozzle;
With
The substrate processing apparatus, wherein the cylindrical member elevating part, the first nozzle elevating part, and the second nozzle elevating part can be driven independently of each other. The substrate processing apparatus according to claim 4 or 5, wherein
A substrate processing apparatus comprising: a detection unit configured to detect a film thickness of the first liquid film. A substrate processing apparatus according to any one of claims 1 to 5,
At least one opening is provided in the height position with the side surface of the said cylindrical member, The substrate processing apparatus characterized by the above-mentioned. A substrate processing apparatus according to any one of claims 1 to 7,
The substrate processing apparatus, wherein the first nozzle is a two-fluid type nozzle that mixes and discharges a gas and the processing liquid. A substrate processing apparatus according to any one of claims 1 to 7,
The substrate processing apparatus according to claim 1, wherein the first nozzle is a nozzle that atomizes and discharges the processing liquid by an inkjet method. A substrate processing apparatus according to any one of claims 1 to 9, wherein
A horizontal moving unit that integrally moves the first nozzle, the second nozzle, and the cylindrical member in a horizontal direction;
A substrate rotating unit that rotates the substrate held by the substrate holding unit around an axis extending in the vertical direction through the center of the substrate;
A substrate processing apparatus comprising: An ejection head for ejecting liquid onto the upper surface of a horizontally held substrate,
A first nozzle that discharges a plurality of droplets of the processing liquid downward;
A second nozzle that is attached to the first nozzle and that discharges the protective liquid downward;
A cylindrical member that houses the discharge ports of the first nozzle and the second nozzle and has a lower opening at a position spaced downward from these discharge ports;
An ejection head comprising:

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