JP2016171193A - High-frequency semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a high-frequency semiconductor device having an excellent operability.SOLUTION: A high-frequency semiconductor device according to an embodiment is used by being arranged on a cooling body and arranged in a thermal insulation container together with the cooling body. The high-frequency semiconductor device comprises: a base substance; and a high-frequency circuit in which an airtight package is configured by a substrate having a through-hole in part thereof, a frame body provided on the substrate, and a lid fixed on the frame body, and that includes a low-noise amplification element provided on the substrate of the package. At least a part of the high-frequency circuit is configured by a superconducting circuit. The superconducting circuit is arranged on the base substance in the through-hole of the substrate.SELECTED DRAWING: Figure 2

Description

  Embodiments described herein relate generally to a high-frequency semiconductor device.

  For example, a low-noise amplification element that amplifies a received high-frequency signal is used in a receiving device or the like used for wireless communication. It is generally known that the NF (Noise Figure) characteristics of a low noise amplifying element are improved as the operating temperature is lowered.

  As one means for operating the low noise amplifying element at a low temperature, the low noise amplifying element is arranged on a low temperature cooling body, and the low noise amplifying element arranged on the cooling body is sealed with a heat insulating container. It is done. The low noise amplification element is cooled by the cooling body. Furthermore, since the low noise amplification element arranged on the cooling body is covered with the heat insulating container, the inflow of heat from the outside is suppressed, and the low temperature state can be efficiently maintained.

  In order to obtain better NF characteristics, it is known to use a superconducting circuit for an input circuit or the like for inputting a high frequency signal to a low noise amplifying element.

  However, for example, GaAs HEMTs and superconducting circuits, which are examples of low-noise amplifier elements, are vulnerable to moisture. When the HEMT is exposed to moisture, its characteristics deteriorate, and when the superconducting circuit is exposed to moisture, the superconducting circuit may not be in a superconducting state even when the superconducting circuit is at low temperature. Therefore, in order to protect the low noise amplification element and the superconducting circuit from moisture, it is necessary to keep the inside of the heat insulating container at a high degree of vacuum. In order to keep a high degree of vacuum, the exhaust pump must continue to operate, but at least from an economic point of view, this method is not a practical means. Thus, there is a problem that the operability of the conventional high-frequency semiconductor device including the low noise amplification element and the superconducting circuit is poor.

JP 2011-222893 A

  An object of the embodiment is to provide a high-frequency semiconductor device excellent in operability.

  The high-frequency semiconductor device according to the embodiment is disposed on a cooling body, and is used by being disposed in a heat insulating container together with the cooling body. This high-frequency semiconductor device forms an airtight package by a base, a substrate partially having a through-hole, a frame provided on the substrate, and a lid fixed on the frame. And a high frequency circuit including a low noise amplifying element provided on the substrate. At least a part of the high-frequency circuit is constituted by a superconducting circuit, and the superconducting circuit is arranged on a base in the through hole of the substrate.

It is a figure which shows typically the high frequency semiconductor module containing the high frequency semiconductor device which concerns on 1st Embodiment. 1 is an exploded perspective view showing a high-frequency semiconductor device according to a first embodiment. It is a fragmentary sectional view showing an important section of a package of a high frequency semiconductor device concerning a 1st embodiment. It is a top view which shows the principal part of the high frequency semiconductor device which concerns on 1st Embodiment. It is a top view which shows the principal part of the high frequency semiconductor device which concerns on 2nd Embodiment. It is a top view which shows the principal part of the high frequency semiconductor device which concerns on 3rd Embodiment. It is a top view which expands and shows the principal part of the amplifier circuit of the high frequency semiconductor device which concerns on 3rd Embodiment.

  Hereinafter, a high-frequency semiconductor device according to an embodiment of the present invention will be described in detail with reference to the drawings.

<First Embodiment>
FIG. 1 is a diagram schematically illustrating a high-frequency semiconductor module including the high-frequency semiconductor device according to the first embodiment. A high-frequency semiconductor module 100 shown in FIG. 1 includes a cooling body 101, a high-frequency semiconductor device 10 disposed on the cooling body 101, and a heat insulating container 102 that houses the cooling body 101 and the high-frequency semiconductor device 10 therein. To do. The high-frequency semiconductor device 10 is cooled by the cooling body 101 to about 80K, for example. And since the cooling body 101 and the high frequency semiconductor device 10 are covered with the heat insulation container 102, inflow of the heat from the outside is suppressed and a low temperature state can be maintained efficiently. Therefore, the high-frequency semiconductor device 10 can operate at a low temperature and can suppress a decrease in NF due to an amplification operation. Below, the high frequency semiconductor device 10 used for such a high frequency semiconductor module 100 is demonstrated with reference to drawings.

  FIG. 2 is an exploded perspective view showing the high-frequency semiconductor device according to the first embodiment. As shown in FIG. 2, the high-frequency semiconductor device 10 according to the first embodiment includes a base 11, a substrate 131 including a high-frequency circuit 12 inside a frame body 132, and a lid 133, and an airtight package 13 (hereinafter referred to as “airtight package 13”). , Sometimes referred to as a package 13).

  The package 13 includes a base body 11, a thin plate-like substrate 131 disposed on the base body 11, a frame body 132 provided on the surface of the substrate 131, and a plate-like lid body 133 disposed on the frame body 132. It is configured.

  The base 11 is a metal plate. The base 11 is made of, for example, a material in which a predetermined amount of copper is mixed with molybdenum or tungsten. In addition, the compounding quantity of copper is mentioned later.

  The substrate 131 and the frame 132 are made of an insulating material such as alumina. The substrate 131 and the frame body 132 may be separate parts, but in the present embodiment, they are joined during firing of alumina.

  The high frequency circuit 12 is provided on the surface of the substrate 131 surrounded by the frame body 132. The high frequency circuit 12 is shielded by a metal film 14 that is uniformly provided on the back surface of the lid 133. Below, the shielding effect by the metal film 14 is demonstrated with reference to FIG. 2 and FIG. FIG. 3 is a partial cross-sectional view showing the main part of the package.

  The frame 132 is provided with a plurality of through holes 15 that penetrate the frame 132 and the substrate 131. In these through holes 15, conductors 151 (FIG. 3) are provided, and the base 11 and the metal film 14 on the back surface of the lid 133 are electrically connected by the conductors 151 in the through holes 15. . Since the base 11 is normally grounded, the conductor 151 in the through hole 15 and the metal film 14 of the lid 133 are also grounded. Therefore, the high-frequency circuit 12 is shielded by the metal film 14 of the lid 133, the plurality of through holes 15 that penetrate the frame body 132 and the substrate 131, and the base body 11.

  Please refer to FIG. Such a substrate 131 is disposed on the surface of the base 11 and is bonded to the base 11 by using silver nanoparticles and pressurizing at a bonding temperature of about 200 ° C. Alternatively, the substrate 131 is pressed at a temperature of about 30 ° C. using room temperature bonding (a technique in which the surfaces of metal layers activated by argon beam etching or the like are pressed together in a vacuum) and bonded to the substrate 11. Are joined.

  Similarly, the lid 133 is disposed on the surface of the frame 132 and is bonded to the frame 132 by using silver nanoparticles and pressurizing under a bonding temperature of 200 °. Alternatively, the lid body 133 is bonded to the frame body 132 at a bonding temperature of 30 ° C. using normal temperature bonding. The lid 133 may be fixed to the frame 132 with an epoxy adhesive.

  Here, the amount of copper constituting the base body 11 is such that the thermal expansion coefficient of the base body 11 is the substrate 131 at an intermediate temperature between the bonding temperature between the substrate 131 and the base body 11 and the use temperature of the high-frequency semiconductor device 10. The blending amount is approximately the same as the thermal expansion coefficient. For example, when the bonding temperature is 200 ° C. and the use temperature is −196 ° C. (77 K), the blending amount (15%) is such that the coefficient of thermal expansion of the substrate at 0 ° C. substantially matches the coefficient of thermal expansion of the package. .

  FIG. 4 is a top view showing a main part of the high-frequency semiconductor device according to the first embodiment. FIG. 4 shows the high-frequency circuit 12 provided on the substrate 131. As shown in FIG. 4, the high-frequency circuit 12 provided on the surface of the substrate 131 of the package 13 includes an amplifier circuit 121 including a low-noise amplifier element 16, a matching circuit 18a, and a matching circuit 18b made of, for example, a GaAs HEMT. The branch circuit 122 includes a Lange coupler 17a, and the combining circuit 123 includes a Lange coupler 17b.

  The high-frequency circuit 12 includes an input line 124 connected to the input side of the branch circuit 122 and an output line 125 connected to the output side of the synthesis circuit 123. Each of the input line 124 and the output line 125 extends to the outside of the frame body 132.

  In such a high frequency circuit 12, a part of the input line 124 is constituted by the superconducting circuit 19. In the superconducting circuit 19, a YBCO thin film (not shown) and a gold (Au) thin film (not shown) serving as a protective layer are uniformly provided on a superconductive substrate 191 (magnesium oxide (MgO) substrate or the like). A wiring 192 is provided on the superconducting substrate 191 by dry etching the YBCO thin film and the gold thin film on the substrate.

  Such a superconducting circuit 19 is provided with a through hole 20 in the substrate 131 of the package 13 and is disposed on the base body 11 in the through hole 20. And it fixes to the base | substrate 11 exposed from the through-hole 20, for example by silver nanoparticle. The wiring 192 of the superconducting circuit 19 is electrically connected to the input line 124 around the circuit 19 by a connection conductor 21 such as a wire.

  The wiring 192 of the superconducting circuit 19 has a resistance about 1000 times higher than that of gold in a normal temperature environment, but substantially has a resistance of zero in a low temperature environment of about −200 ° C. Therefore, by using the superconducting circuit 19 in a low-temperature environment, it is possible to suppress loss of the high-frequency signal passing through the circuit 19 and to suppress NF (Noise Figure) deterioration.

  According to the high frequency semiconductor device 10 according to the first embodiment described above, the low noise amplifying element 16 and the superconducting circuit 19 are sealed in the package 13. Then, the high-frequency semiconductor device 10 in which the low-noise amplification element 16 and the superconducting circuit 19 are sealed in this way is arranged in a heat insulating container 102 as shown in FIG. Therefore, even if the degree of vacuum in the heat insulating container 102 is lowered, the low noise amplifying element 16 and the superconducting circuit 19 are disposed in the highly airtight package 13 space and can be protected from moisture. As a result, it is possible to suppress the characteristic deterioration due to moisture of the low noise amplifying element 16 and the superconducting circuit 19 and to provide the high frequency semiconductor device 10 having excellent operability.

  Further, according to the high-frequency semiconductor device 10 according to the first embodiment, the bonding temperature between the base 11 and the package 13 and the bonding temperature between the frame body 132 and the lid body 133 of the package 13 are conventional, such as silver-copper solder. Low compared to technology. Therefore, even if the high frequency semiconductor device 10 is set to a low temperature of, for example, about −200 ° C., the high frequency semiconductor device 10 can be prevented from being damaged.

  That is, a conventional high-frequency semiconductor device including a metal base and a ceramic frame is manufactured by performing both at a high bonding temperature of about 800 ° C. with silver-copper solder. Various materials constituting such a high-frequency semiconductor device are designed so that the stress applied to each portion is minimized with respect to a temperature change from a high junction temperature of about 800 ° C. to room temperature, for example. When such a high-frequency semiconductor device is further lowered to a low temperature of about −200 ° C., the temperature difference from the bonding temperature becomes about 1000 ° C., and the stress applied to each part becomes extremely large. Therefore, when such a conventional high-frequency semiconductor device is brought to a low temperature, the high-frequency semiconductor device may be damaged.

  On the other hand, according to the high-frequency semiconductor device 10 according to the first embodiment, since the junction temperature is low, the temperature difference from the junction temperature is about 400 ° C. even when the temperature is about −200 ° C. The stress applied to the part is reduced. Therefore, even if the high-frequency semiconductor device 10 is set to a low temperature of about −200 ° C., for example, the device 10 can be prevented from being damaged.

  Further, in the conventional high-frequency semiconductor device, the amount of copper constituting the substrate is determined so as to match the thermal expansion coefficient of the frame at room temperature. On the other hand, in the high-frequency semiconductor device 10 according to the first embodiment, the amount of copper constituting the base body 11 matches the thermal expansion coefficient of the package 13 at an intermediate temperature between the bonding temperature and the use temperature. It has been established. Therefore, when the high-frequency semiconductor device 10 is set to a low temperature of about −200 ° C., the stress generated between the base 11 and the package 13 can be further reduced. As a result, when the high-frequency semiconductor device 10 is set to a low temperature of, for example, about −200 ° C., the device 10 can be further prevented from being damaged.

<Second Embodiment>
FIG. 5 is a top view showing a main part of the high-frequency semiconductor device according to the second embodiment. FIG. 5 also shows the high-frequency circuit 22 provided in the package 13 as in FIG. Similarly to the high-frequency circuit 12 of the high-frequency semiconductor device 10 according to the first embodiment, the high-frequency circuit 22 illustrated in FIG. 5 includes a low-noise amplification element 16 configured by, for example, a GaAs-based HEMT, a matching circuit 18a, and a matching circuit 18b. The amplifier circuit 121 includes the branch circuit 24 configured by the Lange coupler 23, and the synthesis circuit 123 configured by the Lange coupler 17b.

  The high frequency circuit 22 includes an input line 124 connected to the input side of the branch circuit 24 and an output line 125 connected to the output side of the synthesis circuit 123. Each of the input line 124 and the output line 125 extends to the outside of the frame body 132.

  Here, in the high-frequency circuit 22 of the high-frequency semiconductor device according to the second embodiment, the Lange coupler 23 of the branch circuit 24 is configured by a superconducting circuit. Since the configuration of the superconducting circuit has already been described, the description thereof is omitted here, but the superconducting circuit constituting the Lange coupler 23 is provided with a through hole 25 in a predetermined portion of the substrate 131 of the package 13 and this through hole. 25 is disposed on the substrate 11 in the interior. And it fixes to the base | substrate 11 exposed from the through-hole 25, for example by silver nanoparticle. The wiring of the superconducting circuit is electrically connected to the wiring around the circuit by a connection conductor 26 such as a wire.

  Also in the high-frequency semiconductor device according to the second embodiment described above, the superconducting circuit constituting the low noise amplifying element 16 and the Lange coupler 23 is sealed in the package 13. Therefore, for the same reason as the high-frequency semiconductor device 10 according to the first embodiment, it is possible to suppress deterioration of characteristics due to moisture in the low-noise amplification element 16 and the superconducting circuit, and to provide a high-frequency semiconductor device excellent in operability. can do.

  In the high-frequency semiconductor device according to the second embodiment, for the same reason as that of the high-frequency semiconductor device 10 according to the first embodiment, the device is damaged when the high-frequency semiconductor device is at a low temperature of about −200 ° C., for example. Can be avoided.

<Third Embodiment>
FIG. 6A is a top view showing the main part of the high-frequency semiconductor device according to the third embodiment. 6A also shows the high-frequency circuit 27 provided in the package 13 as in FIG. Similarly to the high-frequency circuit 12 of the high-frequency semiconductor device 10 according to the first embodiment, the high-frequency circuit 27 illustrated in FIG. The amplifier circuit 28 includes a branch circuit 122 configured by the Lange coupler 17a, and a synthesis circuit 123 configured by the Lange coupler 17b.

  The high-frequency circuit 27 has an input line 124 connected to the input side of the branch circuit 122 and an output line 125 connected to the output side of the synthesis circuit 123. Each of the input line 124 and the output line 125 extends to the outside of the frame body 132.

  FIG. 6B is an enlarged top view showing a main part of the amplifier circuit. As shown in FIG. 6B, in the high-frequency circuit 27 of the high-frequency semiconductor device according to the third embodiment, a part of the amplifier circuit 28 and one of the wirings 29 that connect the branch circuit 122 and the low-noise amplifier element 16. The part is constituted by a superconducting circuit 30. Since the configuration of the superconducting circuit 30 has already been described, the description thereof is omitted here. However, such a superconducting circuit 30 is provided with a through hole 31 in a predetermined portion of the substrate 131 of the package 13, and this through hole The substrate 31 is disposed on the substrate 11. And it fixes to the base | substrate 11 exposed from the through-hole 31, for example by silver nanoparticle. In the superconducting circuit 30, the wiring 302 on the superconducting substrate 301 is electrically connected to the wiring 29 around the circuit 30 by a connection conductor 32 such as a wire.

  Also in the high-frequency semiconductor device according to the third embodiment described above, the low noise amplifying element 16 and the superconducting circuit 30 are sealed in the package 13. Therefore, for the same reason as the high-frequency semiconductor device 10 according to the first embodiment, it is possible to suppress the characteristic deterioration due to moisture of the low noise amplifying element 16 and the superconducting circuit 30 and to improve the operability of the high-frequency semiconductor device. Can be provided.

  Also, in the high-frequency semiconductor device according to the third embodiment, the device is damaged when the high-frequency semiconductor device is brought to a low temperature of about −200 ° C. for the same reason as the high-frequency semiconductor device 10 according to the first embodiment. Can be avoided.

  Although the embodiment of the present invention has been described above, this embodiment is presented as an example and is not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the spirit of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

DESCRIPTION OF SYMBOLS 10 ... High frequency semiconductor device 11 ... Base | substrate 12, 22, 27 ... High frequency circuit 121, 28 ... Amplification circuit 122, 24 ... Branch circuit 123 ... Synthesis circuit 124 ... Input line 125 ... Output line 13 ... Airtight package 131 ... Substrate 132 ... Frame 133 ... Lid 14 ... Metal film 15 ... Through hole 151 ... Conductor 16 ... Low noise amplifying elements 17a, 17b ... Lange couplers 18a, 18b ... matching circuits 19, 30 ... superconducting circuits 191, 301 ... superconducting substrates 192, 302 ... wirings 20, 25, 31 ... through holes 21, 26, 32 ... connecting conductors 23 ... Lange coupler (superconducting circuit)
29 ... Wiring 100 ... High-frequency semiconductor module 101 ... Cooling body 102 ... Thermal insulation container

Claims (4)

A high-frequency semiconductor device disposed on a cooling body and used in a heat insulating container together with the cooling body,
An airtight structure constituted by a base body, a substrate provided on the base body and having a part of a through hole, a frame body provided on the substrate, and a lid body fixed on the frame body Sex package,
A high frequency circuit including a low noise amplifying element provided on the substrate of the hermetic package;
Comprising
At least a part of the high-frequency circuit is constituted by a superconducting circuit,
The high-frequency semiconductor device according to claim 1, wherein the superconducting circuit is disposed on the base in the through hole of the substrate.   The high-frequency semiconductor device according to claim 1, wherein the superconducting circuit is fixed to the base exposed from the through hole with silver nanoparticles. The base and the substrate are bonded by silver nanoparticles or room temperature bonding,
The high-frequency semiconductor device according to claim 1, wherein the frame body and the lid body are bonded by the silver nanoparticles or the room temperature bonding. A metal film uniformly provided on the back surface of the lid,
A plurality of through holes penetrating the frame and the substrate;
A conductor provided in each of the plurality of through holes;
Have
The high-frequency semiconductor device according to claim 3, wherein the metal film and the base are electrically connected by the conductor in the through hole.

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