JP2015103842A - Phased array antenna device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a small size phased array antenna device capable of preventing deterioration of a radiation characteristic when scanning beam at a low cost.SOLUTION: Plural radiation elements 11 are arrayed at the same distance as plural semiconductor chips 2 on an insulator film 4. On the insulator film 4, a ground conductor pattern 7 is continuously formed in an area of a size which includes an area where plural radiation elements 11 are arrayed on a layer above the layer on which re-wiring patterns 5a and 5b are formed. With this, even when a beam scan is made with different excitation phase among neighboring radiation elements 11, the radiation characteristic is prevented from being deteriorated.

Description

  The present invention relates to a phased array antenna apparatus composed of a plurality of radiating elements.

Patent Document 1 below discloses a phased array antenna device in which a plurality of high-frequency modules including radiating elements are arranged on a mounting substrate as a small and inexpensive phased array antenna device.
In this phased array antenna device, the ground of the radiation element is provided inside the high-frequency module, and the ground is divided between adjacent high-frequency modules, so that radiation characteristics may be deteriorated during beam scanning.

Japanese Unexamined Patent Publication No. 11-340724 (paragraph number [0011], FIG. 4)

Since the conventional phased array antenna apparatus is configured as described above, the ground of the radiating element is provided inside the high frequency module, and the ground is divided between adjacent high frequency modules. For this reason, there has been a problem that radiation characteristics may deteriorate during beam scanning.
In addition, heat generated in the semiconductor chip provided in the high-frequency module is discharged from the high-frequency module through the lower mounting board. Therefore, when using a semiconductor chip with a large output, sufficient heat dissipation must be performed. There was a problem that could not be done.
Furthermore, since a large number of high-frequency modules are arranged and configured, the number of parts is large, and particularly in the millimeter wave band where the spacing between the radiating elements is narrow, there is a problem that the assembling cost increases.

  The present invention has been made to solve the above-described problems, and an object of the present invention is to obtain a small and low-cost phased array antenna apparatus capable of suppressing deterioration of radiation characteristics during beam scanning.

  A phased array antenna device according to the present invention includes a reconstructed wafer in which a resin material is filled between a plurality of semiconductor chips arranged at periodic intervals, and a plurality of reconstructed wafers formed on the reconstructed wafer. An insulating film composed of layers and a plurality of radiating elements arranged on the insulating film at periodic intervals, and the insulating film is formed with conductor wiring connected to the semiconductor chip The first ground conductor is continuously formed in a region including a region where a plurality of radiating elements are arranged in a layer above the layer in which the conductor wiring is formed, A coupling means for coupling a signal passing through the conductor wiring to the plurality of radiating elements is formed on the first ground conductor.

  According to the present invention, a plurality of radiating elements are arranged at periodic intervals on the insulating film, and the plurality of radiating elements are arranged in a layer above the layer where the conductor wiring is formed in the insulating film. Since the first ground conductor is continuously formed in an area having a size including the area where the current is performed, a phased array antenna apparatus capable of suppressing deterioration of radiation characteristics during beam scanning is provided. There is an effect to be obtained.

It is a perspective view which shows the state by which the phased array antenna apparatus by Embodiment 1 of this invention is decomposed | disassembled for every layer. It is sectional drawing which shows typically the cross-section of the phased array antenna apparatus by Embodiment 1 of this invention. It is a perspective view which shows the state by which the phased array antenna apparatus by Embodiment 2 of this invention is decomposed | disassembled for every layer. It is sectional drawing which shows typically the cross-section of the phased array antenna apparatus by Embodiment 2 of this invention. It is a perspective view which shows the state by which the phased array antenna apparatus by Embodiment 3 of this invention is decomposed | disassembled for every layer. It is sectional drawing which shows typically the cross-section of the phased array antenna apparatus by Embodiment 3 of this invention.

Embodiment 1 FIG.
1 is a perspective view showing a state in which a phased array antenna apparatus according to Embodiment 1 of the present invention is disassembled for each layer.
FIG. 2 is a cross-sectional view schematically showing a cross-sectional structure of the phased array antenna apparatus according to Embodiment 1 of the present invention.
1 and 2, a reconstructed wafer 1 is a wafer in which a mold resin 3 (resin material) is filled between a plurality of semiconductor chips 2 arranged at periodic intervals. And the mold resin 3 are integrated.

The insulating film 4 is composed of two upper and lower layers, and is formed on the reconstructed wafer 1 by a method such as spin coating.
In the insulating film 4, for example, rewiring patterns 5a and 5b (conductor wirings) are formed by metal film formation such as sputtering, and conductor vias 6a and 6b are formed. The rewiring patterns 5a and 5b are electrically connected to the circuit of the semiconductor chip 2 through the conductor vias 6a and 6b.
In the insulating film 4, the ground conductor pattern 7 and the conductor via 6c are formed in the layer above the layer on which the rewiring patterns 5a and 5b are formed by performing the insulating film formation and the wiring formation process again. Yes.
The ground conductor pattern 7 as the first ground conductor is continuously formed in a region where a plurality of semiconductor chips 2 are arranged, that is, a region having a size including a region where the radiating elements 11 are arranged. Yes.
The hole provided in the ground conductor pattern 7 is a coupling hole 8 that couples a high-frequency signal passing through the rewiring pattern 5b to the radiating element 11, and the coupling hole 8 constitutes a coupling means.

An external connection pad pattern 9, which is an interface for inputting signals from the outside, is provided on the same surface as the ground conductor pattern 7, and is connected to the rewiring pattern 5a through a conductor via 6c.
The antenna substrate 10 is arranged on the ground conductor pattern 7 so as not to overlap with the external connection pad pattern 9.
A plurality of radiation elements 11 are arranged on the antenna substrate 10 at the same intervals as the plurality of semiconductor chips 2.
The metal base 12 is attached to the lower side of the reconstructed wafer 1.

Next, the operation will be described.
In the phased array antenna apparatus of FIG. 1, the external connection pad pattern 9 is connected to an external substrate (not shown) by wire bonding or a flexible substrate, and the external connection pad pattern 9 is transmitted from the external substrate to a high frequency signal. Supplied with control signals and power supply.
A signal (high-frequency signal, control signal, power supply, etc.) input from the external connection pad pattern 9 is propagated to the rewiring pattern 5a through the conductor via 6c, and is distributed by the rewiring pattern 5a. It is propagated to a plurality of semiconductor chips 2 via 6a.

The semiconductor chip 2 includes, for example, a variable attenuator and a variable phase shifter. When a signal input from the external connection pad pattern 9 is received, the variable attenuator and the variable phase shift are received according to the control signal in the signal. By controlling the device, the amplitude and phase of the high-frequency signal input from the external connection pad pattern 9 are adjusted.
The high frequency signal whose amplitude and phase are adjusted by the semiconductor chip 2 is output to the rewiring pattern 5b through the conductor via 6b.
The high-frequency signal propagated through the rewiring pattern 5b is coupled to the radiating element 11 through the coupling hole 8, and radio waves are radiated from the radiating element 11 to the space.

Here, the ground conductor pattern 7 acting as the ground of the radiating element 11 is continuously formed in a region including a region where the semiconductor chips 2 are arranged (a region where the radiating elements 11 are arranged). Therefore, stable radiation characteristics can be obtained without depending on the excitation distribution of each radiation element 11.
Further, the heat generated by the loss of the circuit included in the semiconductor chip 2 is transmitted to the metal base 12 through the mold resin 3. Since the distance from the semiconductor chip 2 to the metal base 12 is short, it is possible to efficiently exhaust heat.

  As apparent from the above, according to the first embodiment, the plurality of radiating elements 11 are arranged on the insulating film 4 at the same intervals as the plurality of semiconductor chips 2, and the rewiring pattern is formed in the insulating film 4. The ground conductor pattern 7 is continuously formed in a region including a region where a plurality of radiating elements 11 are arranged in a layer above the layer in which 5a and 5b are formed. Therefore, even when beam scanning is performed with a difference in excitation phase between adjacent radiating elements 11, there is an effect that a phased array antenna apparatus that can suppress deterioration in radiation characteristics can be obtained.

  Further, according to the first embodiment, since the metal base 12 is configured to be attached to the lower side of the reconstructed wafer 1, the heat generated in the semiconductor chip 2 in the reconstructed wafer 1 can be efficiently metallized. As a result, heat can be exhausted to the base 12, and as a result, even when the semiconductor chip 2 having a large output is mounted, a phased array antenna device in which the temperature rise inside the device during operation is small can be realized.

  Furthermore, according to the first embodiment, since the insulating film 4 and the wiring pattern can be formed on the reconstructed wafer 1 all at once, it is not necessary to assemble parts for each radiation element 11. For this reason, a phased array antenna apparatus with low assembly cost can be realized.

Embodiment 2. FIG.
FIG. 3 is a perspective view showing a state in which the phased array antenna apparatus according to Embodiment 2 of the present invention is disassembled for each layer.
FIG. 4 is a cross-sectional view schematically showing a cross-sectional structure of a phased array antenna apparatus according to Embodiment 2 of the present invention.
3 and FIG. 4, the same reference numerals as those in FIG. 1 and FIG.

In the first embodiment, an example in which the insulating film 4 composed of two upper and lower layers is used has been described. In the second embodiment, an example in which the insulating film 21 composed of three layers is used will be described. To do.
In the middle layer of the insulating film 21, rewiring patterns 5a and 5b and conductor vias 6a and 6b are formed.
Conductive vias 6 c, ground conductor patterns 7, coupling holes 8, and external connection pad patterns 9 are formed in a layer above the insulating film 21.
In the layer below the insulating film 21, a ground conductor pattern 22 and conductor vias 23a and 23b, which are second ground conductors, are formed.

Next, the operation will be described.
In the phased array antenna apparatus of FIG. 3, the external connection pad pattern 9 is connected to an external substrate (not shown) by wire bonding or a flexible substrate, and the external connection pad pattern 9 is transmitted from the external substrate to a high-frequency signal. Supplied with control signals and power supply.
A signal (high-frequency signal, control signal, power supply, etc.) input from the external connection pad pattern 9 is propagated to the rewiring pattern 5a through the conductor via 6c, and is distributed by the rewiring pattern 5a. It is propagated to a plurality of semiconductor chips 2 via 6a and 23a.

The semiconductor chip 2 includes, for example, a variable attenuator and a variable phase shifter. When a signal input from the external connection pad pattern 9 is received, the variable attenuator and the variable phase shift are received according to the control signal in the signal. By controlling the device, the amplitude and phase of the high-frequency signal input from the external connection pad pattern 9 are adjusted.
The high frequency signal whose amplitude and phase are adjusted by the semiconductor chip 2 is output to the rewiring pattern 5b through the conductor vias 23b and 6b.
The high-frequency signal propagated through the rewiring pattern 5b is coupled to the radiating element 11 through the coupling hole 8, and radio waves are radiated from the radiating element 11 to the space.

In the second embodiment, ground conductor patterns 7 and 22 are provided on the upper and lower sides of the rewiring patterns 5a and 5b, respectively, to form strip lines.
Since the ground conductor pattern 22 is provided between the rewiring patterns 5a and 5b and the semiconductor chip 2, the coupling between the rewiring patterns 5a and 5b and the circuit formed on the semiconductor chip 2 can be suppressed. it can.
Therefore, it is not necessary to arrange a wiring pattern for supplying a signal to each semiconductor chip 2 from the outside, so that a phased array antenna device having higher density wiring can be realized.

Embodiment 3 FIG.
FIG. 5 is a perspective view showing a state in which the phased array antenna apparatus according to Embodiment 3 of the present invention is disassembled for each layer.
FIG. 6 is a cross-sectional view schematically showing a cross-sectional structure of a phased array antenna apparatus according to Embodiment 3 of the present invention.
5 and FIG. 6, the same reference numerals as those in FIG. 3 and FIG.

In the first and second embodiments, the example in which the connection relationship between the semiconductor chip 2 and the radiating element 11 is 1: 1, but in the third embodiment, the connection relationship between the semiconductor chip 2 and the radiating element 11 is 1. An example of many-to-many is shown.
That is, in the phased array antenna apparatus of FIG. 5, four radiating elements 11 are associated with one semiconductor chip 2.
Each semiconductor chip 2 includes a distribution circuit that distributes the high-frequency signal into four, and after changing the amplitude and phase of each high-frequency signal to a desired state by the variable attenuator and the variable phase shifter, the respective high-frequency signals are distributed. The four radiating elements 11 are excited by outputting signals to the four radiating elements 11 through the conductor vias 23b and 6b, the rewiring pattern 5b, and the coupling hole 8.

  According to the third embodiment, since a high-frequency signal is supplied from one semiconductor chip 2 to the plurality of radiating elements 11, it is possible to reduce the number of pads for integrating a circuit and inputting a signal to the semiconductor chip 2. As a result, the area of the semiconductor chip 2 per radiating element 11 can be reduced, and a smaller and less expensive phased array antenna apparatus can be realized.

  In the present invention, within the scope of the invention, any combination of the embodiments, or any modification of any component in each embodiment, or omission of any component in each embodiment is possible. .

  DESCRIPTION OF SYMBOLS 1 Reconstructed wafer, 2 Semiconductor chip, 3 Mold resin (resin material), 4 Insulating film, 5a, 5b Rewiring pattern (conductor wiring), 6a, 6b, 6c Conductor via, 7 Ground conductor pattern (1st ground conductor) ), 8 coupling hole (coupling means), 9 external connection pad pattern (interface), 10 antenna substrate, 11 radiating element, 12 metal base, 21 insulating film, 22 ground conductor pattern (second ground conductor), 23a, 23b Conductor via.

Claims (6)

A reconstructed wafer filled with a resin material between a plurality of semiconductor chips arranged at periodic intervals;
An insulating film composed of a plurality of layers formed on the reconstructed wafer;
A plurality of radiating elements arranged at periodic intervals on the insulating film,
The insulating film includes a conductor wiring connected to the semiconductor chip, and includes a region where the plurality of radiation elements are arranged in a layer above the layer where the conductor wiring is formed. A first ground conductor is continuously formed in a region of a size
A phased array antenna apparatus, wherein coupling means for coupling a signal passing through the conductor wiring to the plurality of radiating elements is formed on the first ground conductor.   The phased array antenna apparatus according to claim 1, wherein a second ground conductor is formed in a layer below the layer in which the conductor wiring is formed in the insulating film.   The interface for inputting a signal from the outside is formed in the insulating film, and the signal input from the interface is propagated to the plurality of semiconductor chips via the conductor wiring. Item 3. The phased array antenna device according to Item 2.   The phased array antenna device according to any one of claims 1 to 3, wherein a metal base is disposed below the reconstructed wafer.   The phased array antenna apparatus according to any one of claims 1 to 4, wherein the coupling means is a coupling hole provided in the first ground conductor.   6. The phased array antenna device according to claim 1, wherein the connection relationship between the semiconductor chip and the radiating element is one-to-many.

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