JP2015146332A5 - - Google Patents
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- JP2015146332A5 JP2015146332A5 JP2014017619A JP2014017619A JP2015146332A5 JP 2015146332 A5 JP2015146332 A5 JP 2015146332A5 JP 2014017619 A JP2014017619 A JP 2014017619A JP 2014017619 A JP2014017619 A JP 2014017619A JP 2015146332 A5 JP2015146332 A5 JP 2015146332A5
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- Prior art keywords
- development
- oxide semiconductor
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- thin film
- developing
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- WGTYBPLFGIVFAS-UHFFFAOYSA-M Tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- -1 polysiloxane Polymers 0.000 description 3
- 230000001681 protective Effects 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- OKKJLVBELUTLKV-UHFFFAOYSA-N methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 2
- 229960001231 Choline Drugs 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 229910000318 alkali metal phosphate Inorganic materials 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- CRBHXDCYXIISFC-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CC[O-] CRBHXDCYXIISFC-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- OZAIFHULBGXAKX-UHFFFAOYSA-N precursor Substances N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 1
- 125000005373 siloxane group Chemical group [SiH2](O*)* 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Description
近年、高解像度ディスプレイ向けに、アモルファスＩｎＧａＺｎＯに代表される酸化物半導体を用いた薄膜トランジスタの開発が活発に行われている。酸化物半導体は、液晶ディスプレイに使用されているアモルファスシリコン薄膜トランジスタと比較して、電子移動度が大きく、大きなON/OFF比など優れた電気特性を示すことから、有機ELディスプレイの駆動素子や、省電力素子として期待されている。ディスプレイ向けの開発においては、特にトランジスタとしてのデバイス動作安定性と大面積基板上での均一性を保つことが重要な課題となっている。デバイス動作安定性に極めて重要な要素としては、酸化物半導体層を外部雰囲気から保護する絶縁膜がある。しかし、このような絶縁膜としては、従来のアモルファスシリコンを用いた薄膜トランジスタに利用されてきた保護用絶縁膜が主に使用されており（特許文献１および２）、酸化物半導体が本質的に持つ物性を十分活かせていない虞がある。そして、このことが酸化物半導体を用いた薄膜トランジスタの性能が制限される要因の一つとなっていると考えられている。 In recent years, thin film transistors using an oxide semiconductor typified by amorphous InGaZnO have been actively developed for high-resolution displays. Oxide semiconductor, as compared with amorphous silicon thin film transistor used in liquid crystal displays, the electron mobility is large, because it exhibits excellent electrical properties, such as large ON / OFF ratio, Ya driving element of an organic EL Di scan play It is expected as a power-saving element. In the development for displays, it is particularly important to maintain device operation stability as a transistor and uniformity over a large area substrate. An extremely important element for device operation stability is an insulating film that protects the oxide semiconductor layer from the external atmosphere. However, as such an insulating film, a protective insulating film that has been used for a conventional thin film transistor using amorphous silicon is mainly used (Patent Documents 1 and 2), and an oxide semiconductor has essentially. The physical properties may not be fully utilized. This is considered to be one of the factors that limit the performance of a thin film transistor using an oxide semiconductor.
＜現像工程＞
露光後、必要に応じて露光後加熱を行ったあと、保護膜前駆体層を現像処理する。現像の際に用いられる現像液としては、従来周知の感光性シロキサン組成物の現像に用いられている任意の現像液を用いることができる。本発明においてはポリシロキサンの溶解速度を特定するために水酸化テトラメチルアンモニウム（ＴＭＡＨ）水溶液を用いるが、硬化膜を形成させるときに用いる現像液はこれに限定されない。好ましい現像液としては、水酸化テトラアルキルアンモニウム、コリン、アルカリ金属水酸化物、アルカリ金属メタ珪酸塩（水和物）、アルカリ金属燐酸塩（水和物）、アンモニア、アルキルアミン、アルカノールアミン、複素環式アミンなどのアルカリ性化合物の水溶液であるアルカリ現像液が挙げられ、特に好ましいアルカリ現像液は、ＴＭＡＨ水溶液である。これらアルカリ現像液には、必要に応じ更にメタノール、エタノールなどの水溶性有機溶剤、あるいは界面活性剤が含まれていてもよい。現像方法も従来知られている方法から任意に選択することができる。具体的には、現像液への浸漬（ディップ）、パドル、シャワー、スリット、キャップコート、スプレーなどの方法挙げられる。この現像によって、パターンを得ることができる。現像液により現像が行われた後には、水洗がなされることが好ましい。なお、本発明による製造方法においては、図３に示すように、現像によって形成したコンタクトホール９を介して、ドレイン電極６と保護膜７の上に形成した透明電極（画素電極８）とを導通させることもできる。
<Development process>
After the exposure, after the post-exposure heating as necessary, the protective film precursor layer is developed. As a developing solution used at the time of development, any developing solution used for developing a known photosensitive siloxane composition can be used. In the present invention, an aqueous tetramethylammonium hydroxide (TMAH) solution is used to specify the dissolution rate of polysiloxane, but the developer used for forming a cured film is not limited thereto. Preferred developers include tetraalkylammonium hydroxide, choline, alkali metal hydroxide, alkali metal metasilicate (hydrate), alkali metal phosphate (hydrate), ammonia, alkylamine, alkanolamine, complex Examples include an alkaline developer that is an aqueous solution of an alkaline compound such as a cyclic amine, and a particularly preferred alkaline developer is an aqueous TMAH solution. These alkaline developers may further contain a water-soluble organic solvent such as methanol and ethanol, or a surfactant, if necessary. The developing method can be arbitrarily selected from conventionally known methods. Specific examples include immersion (dip) in a developer, paddle, shower, slit, cap coat, and spray. By this development, a pattern can be obtained. After development with a developer, it is preferably washed with water. In the manufacturing method according to the present invention, as shown in FIG. 3, the drain electrode 6 and the transparent electrode (pixel electrode 8) formed on the protective film 7 are electrically connected through the contact hole 9 formed by development. It can also be made.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014017619A JP6237279B2 (en) | 2014-01-31 | 2014-01-31 | Thin film transistor substrate having protective film and method for manufacturing the same |
| CN201510046590.6A CN104821337B (en) | 2014-01-31 | 2015-01-29 | The thin film transistor base plate and its manufacturing method for having protective film |
| TW104102947A TWI626511B (en) | 2014-01-31 | 2015-01-29 | A method of manufacturing a thin film transistor substrate having a passivation film |
| KR1020150015443A KR102302306B1 (en) | 2014-01-31 | 2015-01-30 | A thin film transistor substrate having a passivation film, and a method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014017619A JP6237279B2 (en) | 2014-01-31 | 2014-01-31 | Thin film transistor substrate having protective film and method for manufacturing the same |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015146332A JP2015146332A (en) | 2015-08-13 |
| JP2015146332A5 true JP2015146332A5 (en) | 2016-11-24 |
| JP6237279B2 JP6237279B2 (en) | 2017-11-29 |
Family
ID=53731582
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014017619A Active JP6237279B2 (en) | 2014-01-31 | 2014-01-31 | Thin film transistor substrate having protective film and method for manufacturing the same |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6237279B2 (en) |
| KR (1) | KR102302306B1 (en) |
| CN (1) | CN104821337B (en) |
| TW (1) | TWI626511B (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3194502A4 (en) | 2015-04-13 | 2018-05-16 | Honeywell International Inc. | Polysiloxane formulations and coatings for optoelectronic applications |
| KR101862710B1 (en) * | 2015-10-30 | 2018-05-30 | 삼성에스디아이 주식회사 | Photo-sensitive Composition, Cured Film Prepared Therefrom, and Device Incoporating the Cured Film |
| TW201723096A (en) * | 2015-12-31 | 2017-07-01 | 奇美實業股份有限公司 | Photosensitive resin composition and uses thereof |
| WO2017200201A1 (en) * | 2016-05-19 | 2017-11-23 | Rohm And Haas Electronic Materials Korea Ltd. | Photosensitive resin composition and cured film prepared therefrom |
| KR102310794B1 (en) * | 2016-05-19 | 2021-10-12 | 롬엔드하스전자재료코리아유한회사 | Photosensitive resin composition and cured film prepared therefrom |
| JP6852296B2 (en) * | 2016-07-19 | 2021-03-31 | 株式会社リコー | Manufacturing method of field effect transistor |
| CN110073476B (en) * | 2016-11-28 | 2023-09-01 | 默克专利有限公司 | Thin film transistor substrate having protective film and method for manufacturing the same |
| KR102028642B1 (en) * | 2016-12-19 | 2019-10-04 | 삼성에스디아이 주식회사 | Photo-sensitive Composition, Cured Film Prepared Therefrom, and Electronic Device Incoporating the Cured Film |
| KR20220046598A (en) * | 2019-08-16 | 2022-04-14 | 도쿄엘렉트론가부시키가이샤 | Methods and Processes for Probability-Based Defect Correction |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006236839A (en) * | 2005-02-25 | 2006-09-07 | Mitsubishi Electric Corp | Organic electroluminescent display device |
| KR101800015B1 (en) * | 2007-12-10 | 2017-11-21 | 카네카 코포레이션 | Alkali-developable curable composition, insulating thin film using the same, and thin film transistor |
| WO2011077978A1 (en) * | 2009-12-25 | 2011-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing display device |
| KR101799260B1 (en) * | 2010-08-24 | 2017-11-20 | 메르크 파텐트 게엠베하 | Positive photosensitive siloxane composition |
| US9236496B2 (en) * | 2011-03-11 | 2016-01-12 | Sharp Kabushiki Kaisha | Thin film transistor and display device |
| JP2012235104A (en) | 2011-04-22 | 2012-11-29 | Kobe Steel Ltd | Thin film transistor structure, and thin film transistor and display device including the structure |
| KR101902164B1 (en) * | 2011-05-20 | 2018-10-01 | 메르크 파텐트 게엠베하 | Positive photosensitive siloxane composition |
| KR20130042867A (en) * | 2011-10-19 | 2013-04-29 | 삼성디스플레이 주식회사 | Solution composition for passivation layer, thin film transistor array panel and manufacturing method for thin film transistor array panel |
| JPWO2013108301A1 (en) * | 2012-01-20 | 2015-05-11 | パナソニック株式会社 | Thin film transistor |
| JP5965696B2 (en) | 2012-03-29 | 2016-08-10 | 株式会社半導体エネルギー研究所 | Semiconductor device and manufacturing method of semiconductor device |
| JP6175740B2 (en) | 2012-03-30 | 2017-08-09 | 株式会社Ｊｏｌｅｄ | THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, DISPLAY DEVICE AND ELECTRONIC DEVICE |
| TWI567497B (en) * | 2012-04-06 | 2017-01-21 | Ａｚ電子材料盧森堡有限公司 | Negative-type photosensitive siloxane composition |
| JP6306278B2 (en) * | 2012-04-09 | 2018-04-04 | Jsr株式会社 | Semiconductor element, semiconductor substrate, radiation-sensitive resin composition, protective film, and display element |
-
2014
- 2014-01-31 JP JP2014017619A patent/JP6237279B2/en active Active
-
2015
- 2015-01-29 TW TW104102947A patent/TWI626511B/en active
- 2015-01-29 CN CN201510046590.6A patent/CN104821337B/en active Active
- 2015-01-30 KR KR1020150015443A patent/KR102302306B1/en active IP Right Grant
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