JP2015046470A - Photoelectric conversion module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a photoelectric conversion module which can maintain excellent characteristics even if the usage amount of a sealing material is reduced by thinning down the sealing material.SOLUTION: A photoelectric conversion module 100 comprises: a substrate 1 having a main surface; a photoelectric conversion part 11 on a central portion of the main surface; a first wiring conductor 9 extending in a first direction parallel to a first side of the photoelectric conversion part 11; a second wiring conductor 19 which is arranged along a second side adjacent to the first side while being spaced apart from the photoelectric conversion part 11, and which extends in a second direction parallel to the second side; an auxiliary electrode 18 having a first portion on its top face to which one end of the first wiring conductor 9 is electrically connected and a second portion, different from the first portion, on the top face to which one end of the second wiring conductor 19 is electrically connected; a sealing material 12 which is arranged on the main surface so as to seal the photoelectric conversion part 11, the auxiliary conductor 18, the first wiring conductor 9, and the second wiring conductor 19; and a protective substrate 13 arranged on the sealing material 12.

Description

  The present invention relates to a photoelectric conversion module including a wiring conductor for taking out electric power generated by a photoelectric conversion unit.

  In recent years, photovoltaic power generation that converts light energy into electric energy has attracted attention as energy problems and environmental problems become more serious.

  In the photoelectric conversion module used for this photovoltaic power generation, the electric power obtained from the photoelectric conversion unit is taken out through a wiring conductor such as a lead wire. In such a photoelectric conversion module, the photoelectric conversion part is formed in the center part of the surface of the substrate, and the wiring conductors connected to the positive electrode and the negative electrode of the photoelectric conversion part are around the photoelectric conversion part on the surface of the substrate. After being routed by the part, it is led out to the inside of the terminal box disposed on the back surface of the substrate (see, for example, Patent Document 1).

JP 2010-056251 A

  As shown in Patent Document 1, when a wiring conductor is routed, it is necessary to bend at a right angle to change the extending direction of the wiring conductor. When the wiring conductor is bent at a right angle, the thickness of the bent portion increases. Therefore, it is necessary to increase the thickness of the sealing material that seals the photoelectric conversion portion and the wiring conductor, and the amount of the sealing material used increases, making it difficult to reduce the cost.

  Therefore, the present invention provides a photoelectric conversion module that can maintain good characteristics even when the sealing material is thinned to reduce the amount of the sealing material used.

  The photoelectric conversion module which concerns on 1 aspect of this invention is along the 1st edge | side of the board | substrate which has one main surface, the rectangular-shaped photoelectric conversion part arrange | positioned on the center part of the said one main surface, and the said photoelectric conversion part. A first wiring conductor that is arranged to be electrically connected to the photoelectric conversion unit and extends in a first direction parallel to the first side, and a second side adjacent to the first side of the photoelectric conversion unit. A second wiring conductor that is spaced apart from the photoelectric conversion unit and extends in a second direction parallel to the second side, a virtual extension line of the first wiring conductor on the one main surface, and the second A layered conductor disposed at an intersection where virtual extension lines of the wiring conductor intersect; one end of the first wiring conductor is electrically connected to a first portion of the upper surface; One end of the second wiring conductor is electrically connected to a second part different from the one part. An auxiliary electrode, a sealing material that is disposed on the one main surface and seals the photoelectric conversion unit, the auxiliary conductor, the first wiring conductor, and the second wiring conductor, and is disposed on the sealing material And a protective substrate.

  According to the photoelectric conversion module of one embodiment of the present invention, it is possible to reduce the usage of the sealing material by thinning the sealing material while maintaining good characteristics.

It is a perspective view in the state where the sealing material and the protective substrate of the photoelectric conversion module according to the first embodiment are not provided. It is a top view of the photoelectric conversion module shown in FIG. It is sectional drawing of the photoelectric conversion module in the AA line of FIG. It is sectional drawing of the photoelectric conversion module in the BB line of FIG. It is a principal part enlarged view of the photoelectric conversion module of FIG. It is sectional drawing of the photoelectric conversion module of the state which provided the sealing material and the protective substrate. It is a top view of the photoelectric conversion module which concerns on 2nd Embodiment. It is a top view of the photoelectric conversion module which concerns on 3rd Embodiment. It is a top view of the photoelectric conversion module which concerns on 4th Embodiment.

  A photoelectric conversion module according to one embodiment of the present invention will be described with reference to the drawings. In each figure, right-handed XYZ coordinates with the X-axis as the arrangement direction of photoelectric conversion cells described later are attached.

<Photoelectric Conversion Module According to First Embodiment>
1 to 5 show the photoelectric conversion module 100 according to the first embodiment in a state in which the sealing material 12 and the protective substrate 13 are removed in order to make the configuration of the wiring conductor and the like easier to see (hereinafter, the sealing material 12 and the protective substrate). 13 shows a configuration of the photoelectric conversion module 100 according to the first embodiment excluding 13 is referred to as a first module 101).

  1 is a perspective view of the first module 101, and FIG. 2 is a plan view of the first module 101 shown in FIG. 3 is a cross-sectional view of the first module 101 taken along line AA in FIG. 2, and FIG. 4 is a cross-sectional view of the first module 101 taken along line BB in FIG. FIG. 5 is an enlarged view of a main part of the first module 101 of FIG.

  The first module 101 includes a substrate 1, a photoelectric conversion unit 11, an output electrode 8, an auxiliary electrode 18, a first wiring conductor 9, and a second wiring conductor 19. Then, by providing the first module 101 with the sealing material 12 and the protective substrate 13, the photoelectric conversion module 100 according to the first embodiment shown in FIG. 6 is obtained. 6 is a cross-sectional view of the photoelectric conversion module 100 in the same direction as FIG.

  The substrate 1 has a function of supporting the photoelectric conversion unit 11. Examples of the material of the substrate 1 include blue plate glass (soda lime glass) or borosilicate glass having a thickness of about 1 to 3 mm. Note that the material of the substrate 1 is not limited to this, and other glass, ceramics, resin, metal, or the like may be used. Moreover, the shape of the board | substrate 1 should just be flat form, such as rectangular shape and circular shape, for example.

  The photoelectric conversion unit 11 is provided on one main surface of the substrate 1. In the photoelectric conversion unit 11, a plurality of photoelectric conversion cells are electrically connected to each other and integrated on the substrate 1 from the viewpoint of increasing the output of power generation. And the whole shape of the photoelectric conversion part 11 when the 1st module 101 is planarly viewed is a rectangular shape. Details of the photoelectric conversion unit 11 will be described later.

  The output electrode 8 is provided on one main surface of the substrate 1 so that a pair of electrodes are electrically connected to the pair of electrodes of the photoelectric conversion unit 11. In the example of FIGS. 1 to 5, the output electrode 8 is a pair of an output electrode 8 </ b> A connected to one electrode of the photoelectric conversion unit 11 and an output electrode 8 </ b> B connected to the other electrode of the photoelectric conversion unit 11. The example which has is shown.

The output electrode 8 may be a thin film containing a metal such as molybdenum (Mo), aluminum (Al), titanium (Ti), tantalum (Ta), gold (Au), or an alloy thereof. Moreover, the structure formed by laminating | stacking these metals may be sufficient. The output electrode 8 may be formed to a thickness of about 0.2 to 1 μm on the substrate 1 by using a sputtering method or a vapor deposition method, for example. From the viewpoint of simplifying the process, the output electrode 8 may be manufactured at the same time as the lower electrode layer 2 with the same material as the lower electrode layer 2 described later.

  The first wiring conductor 9 is disposed along the first side of the photoelectric conversion unit 11 so as to extend in a first direction (Y-axis direction) parallel to the first side. Further, the first wiring conductor 9 is connected to the output electrode 8, whereby the photoelectric conversion unit 11 and the first wiring conductor 9 are electrically connected. Note that the first side of the photoelectric conversion unit 11 is a side on the + X side and −X side (side parallel to the Y axis) of the photoelectric conversion unit 11 indicated by a thick bold line in FIG. In the example of FIGS. 1 to 5, the first wiring conductor 9 has a pair of the first wiring conductor 9A connected to the output electrode 8A and the first wiring conductor 9B connected to the output electrode 8B. Show.

  The second wiring conductor 19 is disposed so as to extend in a second direction (X-axis direction) parallel to the second side along the second side adjacent to the first side of the photoelectric conversion unit 11. Further, the second wiring conductor 19 is arranged with a space from the photoelectric conversion unit 11. Note that the second side of the photoelectric conversion unit 11 is a side on the + Y side (side parallel to the X axis) of the photoelectric conversion unit 11 indicated by a thick bold line in FIG. In the example of FIGS. 1 to 5, the second wiring conductor 19 includes a second wiring conductor 19A connected to the first wiring conductor 9A via an auxiliary electrode 18A described later, and the first wiring conductor via the auxiliary electrode 18B. The example which has a pair with the 2nd wiring conductor 19B connected to 9B is shown.

  The 1st wiring conductor 9 and the 2nd wiring conductor 19 are conductors, such as silver (Ag), copper (Cu), and Al, and are strip | belt shape whose thickness is about 0.3-2 mm and width is about 2-6 mm. . The first wiring conductor 9 is electrically connected to the output electrode 8 by soldering, bonding with a conductive adhesive, welding, or the like. Similarly, the first wiring conductor 9 and the second wiring conductor 19 are electrically connected to the auxiliary electrode 18 by soldering, bonding with a conductive adhesive, welding, or the like.

  The auxiliary electrode 18 is a layered conductor that is disposed at the intersection of the virtual extension line of the first wiring conductor 9 and the virtual extension line of the second wiring conductor 19 on one main surface of the substrate 1. One end of the first wiring conductor 9 is electrically connected to the first portion of the upper surface of the auxiliary electrode 18 (the main surface on the + Z side), and is different from the first portion of the upper surface of the auxiliary electrode 18. One end of the second wiring conductor 19 is electrically connected to the second part. In the examples of FIGS. 1 to 5, the auxiliary conductor 18 includes an auxiliary conductor 18A connected to the first wiring conductor 9A and the second wiring conductor 19A, and an auxiliary conductor connected to the first wiring conductor 9B and the second wiring conductor 19B. The example which has 1 pair with the conductor 18B is shown.

  The auxiliary electrode 18 can electrically connect the first wiring conductor 9 and the second wiring conductor 19 without increasing the thickness, and can be a wiring conductor having a constant thickness and bent in different directions. it can. As a result, the auxiliary electrode 18 can be sufficiently sealed even if the thickness of the sealing material 12 described later is reduced, and the amount of the sealing material 12 used can be reduced while maintaining the favorable characteristics of the photoelectric conversion module 100. Can be reduced.

The auxiliary electrode 18 may be a thin film containing a metal such as Mo, Al, Ti, Ta or Au, or an alloy thereof. Moreover, the structure formed by laminating | stacking these metals may be sufficient. The auxiliary electrode 18 may be formed to a thickness of about 0.2 to 1 μm on the substrate 1 by using a sputtering method or a vapor deposition method, for example. As shown in FIGS. 1 to 5, the auxiliary electrode 8 may be one in which the output electrode 8 is extended. With such a configuration, the electrical resistance of the first wiring conductor 9 can be further reduced. From the viewpoint of simplifying the process, the auxiliary electrode 8 may be manufactured at the same time as the output electrode 8 and the lower electrode layer 2 with the same material as the output electrode 8 and the lower electrode layer 2 described later.

  On the auxiliary electrode 18, the 1st wiring conductor 9 and the 2nd wiring conductor 19 may be arrange | positioned apart, as shown in sectional drawing of FIG. In this case, since the sealing material 12 enters between the first wiring conductor 9 and the second wiring conductor 19, the connection between the first wiring conductor 9 and the auxiliary electrode 18 of the second wiring conductor 19 is maintained well. be able to. Note that the first wiring conductor 9 and the second wiring conductor 19 may be in contact with each other on the auxiliary electrode 18. In this case, the electrical resistance between the first wiring conductor 9 and the second wiring conductor 19 can be reduced.

  The first wiring conductor 9, the auxiliary electrode 18, and the second wiring conductor 19 function as a conductive path for taking out the electric power generated by the photoelectric conversion unit 11 to the outside of the photoelectric conversion module 100. The end of the second wiring conductor 19 opposite to the auxiliary electrode 18 is led out of the photoelectric conversion module 100. As a method for deriving the end portion of the second wiring conductor 19 to the outside of the photoelectric conversion module 100, for example, as shown in FIGS. May be led out to the outside through a through hole 1a penetrating the substrate 1 from the opposite main surface. Alternatively, the end of the second wiring conductor 19 may be led out from the outer periphery of one main surface of the substrate 1. Alternatively, the end of the second wiring conductor 19 may be led out through the sealing material 12 and the protective substrate 13.

  1 and 2 show an example in which the auxiliary electrodes 18A and 18B and the second wiring conductors 19A and 19B are connected to the pair of first wiring conductors 9A and 9B, respectively. The auxiliary electrode 18 and the second wiring conductor 19 may be connected to only one of the wiring conductors 9. For example, if the through hole 1a of the substrate 1 is provided on the extension of the first wiring conductor 9A, it is only necessary to connect the auxiliary electrode 18B and the second wiring conductor 19B only to the first wiring conductor 9B. The conductor 9A can be directly led out to the through hole 1a.

  As shown in FIG. 6, the sealing material 12 is disposed on one main surface of the substrate 1, and the photoelectric conversion unit 11, the output electrode 8, the first wiring conductor 9, the auxiliary electrode 18, and the second wiring conductor. 19 has a function of sealing. Examples of such a sealing material include a resin mainly composed of copolymerized ethylene vinyl acetate (EVA) and a resin mainly composed of polyvinyl butyral (PVB).

  As shown in FIG. 6, the protective substrate 13 is provided so as to cover the sealing material 12, and includes the photoelectric conversion unit 11, the output electrode 8, the first wiring conductor 9, the auxiliary electrode 18, and the second wiring conductor 19. Has a function to protect. Glass or the like can be used as the protective substrate 13.

<Photoelectric conversion unit>
Next, the photoelectric conversion unit 11 will be described. FIG. 4 is a partial cross-sectional view showing the photoelectric conversion unit 11 at the center of the first module 101 in the Y direction, and FIG. 5 is a perspective view of the main part of the part. 4 and 5 show an example of the photoelectric conversion unit 11 used in the first module 101, and the present invention is not limited to this.

  The photoelectric conversion unit 11 includes a lower electrode layer 2, a first semiconductor layer 3, a second semiconductor layer 4 having a conductivity type different from the first semiconductor layer 3, an upper electrode layer 5, and a collecting electrode 6. A plurality of photoelectric conversion cells 10 including the above are connected in series in the X direction of FIG. In the adjacent photoelectric conversion cell 10, the upper electrode layer 5 of one photoelectric conversion cell 10 is connected to the lower electrode layer 2 of the other adjacent photoelectric conversion cell 10 through the collector electrode 6 and the connection conductor 7. An output electrode 8A is formed outside one end of the photoelectric conversion unit 11, and is electrically connected to the lower electrode layer 2 of the photoelectric conversion cell 10 on the one end side. An output electrode 8B is also formed outside the other end of the photoelectric conversion unit 11 on the opposite side, and is electrically connected to the upper electrode layer 5 of the photoelectric conversion cell 10 on the other end side.

  Next, each member of the photoelectric conversion unit 11 will be described.

  A plurality of lower electrode layers 2 are arranged on one main surface of the substrate 1 at intervals in one direction (X direction in FIG. 4). The number of the lower electrodes 3 is not limited to that shown in FIG. Such a lower electrode layer 2 may be a thin film containing a metal such as Mo, Al, Ti, Ta or Au, or an alloy thereof. Moreover, the structure formed by laminating | stacking these metals may be sufficient. The lower electrode layer 2 may be formed to a thickness of about 0.2 to 1 μm on the substrate 1 by using a sputtering method or a vapor deposition method, for example.

  The first semiconductor layer 3 is disposed on the lower electrode layer 2. For example, amorphous silicon or a compound semiconductor is used for the first semiconductor layer 3. Examples of the compound semiconductor include an I-III-VI compound, an I-II-IV-VI group compound semiconductor, and an II-VI group compound semiconductor.

An I-III-VI compound semiconductor is a compound of a group IB element (also referred to as a group 11 element), a group III-B element (also referred to as a group 13 element) and a group VI-B element (also referred to as a group 16 element). It is a semiconductor. Such an I-III-VI compound semiconductor has a chalcopyrite structure and is also called a chalcopyrite compound semiconductor (also referred to as a CIS compound semiconductor). Examples of the I-III-VI compound semiconductor include copper indium diselenide (CuInSe ₂ ), copper indium diselenide / gallium (Cu (In, Ga) Se ₂ ), diselen selenide / copper indium / gallium (gallium ( Cu (In, Ga) (Se, S) ₂ ), copper indium gallium disulfide (Cu (In, Ga) S ₂ ), or a thin film of selenium disulfide / copper indium / gallium as a surface layer There are multi-element compound semiconductor thin films such as copper indium selenide and gallium.

In addition, the I-II-IV-VI group compound semiconductors are IB group elements, II-B group elements (also referred to as group 12 elements), IV-B group elements (also referred to as group 14 elements), and VI-B. It is a compound semiconductor of a group element. Examples of the I-II-IV-VI group compound include Cu ₂ ZnSnS ₄ .

  The II-VI group compound semiconductor is a compound semiconductor of II-B group elements and VI-B group elements. Examples of II-VI group compound semiconductors include CdTe.

  The first semiconductor layer 3 is formed by a vacuum process such as sputtering or vapor deposition. The first semiconductor layer 3 is also formed by a process called a coating method or a printing method. In the application method or the printing method, for example, a complex solution of an element mainly contained in the first semiconductor layer 3 is applied on the lower electrode layer 2, and then drying and heat treatment are performed.

  The second semiconductor layer 4 is provided on the main surface on the + Z side of the first semiconductor layer 3 with a thickness of, for example, 10 to 200 nm, and has a conductivity different from the conductivity type of the first semiconductor layer 3. Mainly includes semiconductors with molds. Note that semiconductors having different conductivity types are semiconductors having different conductive carriers. For example, if the first semiconductor layer 3 is p-type, the second semiconductor layer 4 is n-type and vice versa. Further, another semiconductor layer such as i-type may be interposed between the first semiconductor layer 3 and the second semiconductor layer 4.

  The second semiconductor layer 4 may be formed by doping the surface portion of the first semiconductor layer 3 with another element, and is formed by heterojunction with a compound different from the first semiconductor layer 3. It may be.

  The upper electrode layer 5 is provided on the main surface on the + Z side of the second semiconductor layer 4. For example, the upper electrode layer 5 is a translucent conductive layer having the same conductivity type as that of the second semiconductor layer 4. The upper electrode layer 5 serves as an electrode for extracting carriers generated in the first semiconductor layer 3 and the second semiconductor layer 4. The upper electrode layer 5 mainly includes a material having a lower electrical resistivity than the second semiconductor layer 4.

The upper electrode layer 5 mainly includes a material having a wide forbidden bandwidth, a light transmitting property, and a low electrical resistance. Examples of such a material include zinc oxide (ZnO), a compound of zinc oxide, and metal oxide semiconductors such as indium oxide (ITO) containing tin and tin oxide (SnO ₂ ). The zinc oxide compound contains any one element of aluminum, boron, gallium, indium, and fluorine.

  The upper electrode layer 5 can be formed by sputtering, vapor deposition, chemical vapor deposition (CVD), or the like. The thickness of the upper electrode layer 5 is, for example, 0.05 to 3.0 μm. Here, if the upper electrode layer 5 has a resistivity of less than 1 Ω · cm and a sheet resistance of 50 Ω / □ or less, the first semiconductor layer 3 and the second semiconductor layer 3 are interposed via the upper electrode layer 5. Carriers can be taken out from the semiconductor layer 4 satisfactorily.

  If the thickness of the upper electrode layer 5 is 0.05 to 0.5 μm, the light transmissivity in the translucent conductive layer 6 can be improved, and at the same time, the current generated by the photoelectric conversion can be transmitted well. Furthermore, if the absolute refractive index of the upper electrode layer 5 and the absolute refractive index of the second semiconductor layer 4 are substantially the same, light is reflected at the interface between the upper electrode layer 5 and the second semiconductor layer 4. The resulting incident light loss can be reduced.

  The collecting electrode 6 is linearly provided on the + Z side main surface (also referred to as one main surface) of the upper electrode layer 5 from the end of the upper electrode layer 5 to the connection conductor 7. For example, the carriers collected by the upper electrode layer 5 of the photoelectric conversion cell 10 can be further collected by the current collecting electrode 6 and transmitted to the adjacent photoelectric conversion cell 10 via the connection conductor 7.

  By providing the current collecting electrode 6, the conductivity of the upper electrode layer 5 is supplemented, so that the upper electrode layer 5 can be thinned. Thereby, securing of the carrier extraction efficiency and improvement of light transmittance in the upper electrode layer 5 can both be achieved. If the current collecting electrode 6 mainly contains a metal having excellent conductivity such as silver, for example, the conversion efficiency in the photoelectric conversion cell 10 can be improved. In addition, as a metal contained in the current collection electrode 6, copper, aluminum, nickel, etc. are mentioned, for example.

  Moreover, if the width | variety of the current collection electrode 6 is 50-400 micrometers, the fall of the incident amount of the light to the 1st semiconductor layer 3 will be reduced, ensuring the favorable electroconductivity between the adjacent photoelectric conversion cells 10. FIG. obtain. When a plurality of collector electrodes 6 are provided in one photoelectric conversion cell 10, the interval between the plurality of collector electrodes 6 may be about 2.5 mm, for example.

  The connection conductor 7 is disposed in a separation groove that separates the first semiconductor layer 3 and the second semiconductor layer 4. The connection conductor 7 is electrically connected to the current collecting electrode 6. The connection conductor 7 is connected to the lower electrode layer 2 extended from the adjacent photoelectric conversion cell 10. Thereby, the connection conductor 7 can electrically connect the upper electrode layer 5 of one photoelectric conversion cell 10 and the lower electrode layer 2 of the other photoelectric conversion cell 10 among the adjacent photoelectric conversion cells 10.

  The connection conductor 7 may be made of the same material and method as the current collecting electrode 6. Therefore, the connection conductor 7 may be performed simultaneously with the formation of the current collecting electrode 6. Further, the connection conductor 7 may be obtained by extending the upper electrode layer 5.

<Photoelectric Conversion Module According to Second Embodiment>
The present invention is not limited to the above-described embodiment, and many modifications and changes can be made within the scope of the present invention. In the photoelectric conversion module 100 according to the first embodiment, the auxiliary electrode 18 is configured by extending the output electrode 8, but is not limited thereto. As shown in the photoelectric conversion module according to the second embodiment in FIG. 7, the auxiliary electrode 28 may be disposed at a distance from the output electrode 8. FIG. 7 shows the photoelectric conversion module (second module 201) according to the second embodiment in a state where the sealing material 12 and the protective substrate 13 are removed. With such a configuration, stress due to thermal expansion or the like of the output electrode 8 becomes difficult to be transmitted to the auxiliary electrode 28, and the connection of the first wiring conductor 9 and the second wiring conductor 19 to the auxiliary electrode 28 can be better maintained.

<Photoelectric Conversion Module According to Third Embodiment>
Moreover, the following may be used as another example of the photoelectric conversion module. 8 shows a photoelectric conversion module according to the third embodiment (FIG. 8 shows the third module 301 in a state where the sealing material 12 and the protective substrate 13 are removed from the photoelectric conversion module according to the third embodiment). As described above, the auxiliary electrode 38 may have an elongated shape extending along the second direction (X-axis direction) that is the extending direction of the second wiring conductor 19. With such a configuration, since the second wiring conductor 19 can be joined along the auxiliary electrode 38 with solder or the like, the second wiring conductor 19 can be favorably joined to the substrate 1 via the auxiliary electrode 38. This can effectively reduce the peeling of the second wiring conductor 19.

<Photoelectric Conversion Module According to Fourth Embodiment>
Moreover, the following may be used as another example of the photoelectric conversion module. 9 shows the photoelectric conversion module according to the fourth embodiment (FIG. 9 shows the fourth module 401 in a state where the sealing material 12 and the protective substrate 13 are removed from the photoelectric conversion module according to the fourth embodiment). As described above, the auxiliary electrode 48 has an elongated shape extending along the second direction (X-axis direction) that is the extending direction of the second wiring conductor 19 and may be connected to the output electrode 8. With such a configuration, similarly to the third module 301, the peeling of the second wiring conductor 19 can be effectively reduced, and the electric power generated from the photoelectric conversion unit 11 is output to the outside of the photoelectric conversion module with lower electrical resistance. can do.

DESCRIPTION OF SYMBOLS 100: Photoelectric conversion module 101: 1st module 201: 2nd module 301: 3rd module 401: 4th module 1: Board | substrate 11: Photoelectric conversion part 8: Output electrode 9: 1st wiring conductor 12: Sealing material 13: Protective substrate 18: Auxiliary electrode 19: Second wiring conductor

Claims (4)

A substrate having a major surface;
A rectangular photoelectric conversion portion disposed on the central portion of the one main surface;
A first wiring conductor disposed along the first side of the photoelectric conversion unit to be electrically connected to the photoelectric conversion unit and extending in a first direction parallel to the first side;
A second wiring conductor arranged in a second direction parallel to the second side and spaced apart from the photoelectric conversion unit along a second side adjacent to the first side of the photoelectric conversion unit;
A layered conductor disposed at an intersection where the virtual extension line of the first wiring conductor and the virtual extension line of the second wiring conductor on the one main surface intersect, and the first wiring on a first portion of the upper surface; An auxiliary electrode in which one end portion of the conductor is electrically connected and one end portion of the second wiring conductor is electrically connected to a second portion different from the first portion on the upper surface;
A sealing material disposed on the one main surface and sealing the photoelectric conversion unit, the auxiliary conductor, the first wiring conductor and the second wiring conductor;
A photoelectric conversion module comprising a protective substrate disposed on the sealing material.   2. The photoelectric device according to claim 1, wherein the photoelectric conversion unit includes an output electrode to which the first wiring conductor is connected, and the output electrode extends to the intersecting portion to constitute the auxiliary electrode. Conversion module.   The photoelectric conversion module according to claim 1, wherein the auxiliary electrode has an elongated shape extending along the second direction.   The said board | substrate or the said protective substrate has a through-hole along the lamination direction of the said board | substrate, the said sealing material, and the said protective substrate, The said 2nd wiring conductor is penetrated by this through-hole. The photoelectric conversion module according to any one of 1 to 3.

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