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JP2014103300A - Photovoltaic generator - Google Patents

Photovoltaic generator Download PDF

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JP2014103300A
JP2014103300A JP2012255118A JP2012255118A JP2014103300A JP 2014103300 A JP2014103300 A JP 2014103300A JP 2012255118 A JP2012255118 A JP 2012255118A JP 2012255118 A JP2012255118 A JP 2012255118A JP 2014103300 A JP2014103300 A JP 2014103300A
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photovoltaic
photovoltaic device
metal conductor
transparent conductive
conductive adhesive
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Kimikazu HASHIMOTO
公一 橋本
Masazumi Ouchi
正純 大内
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Choshu Industry Co Ltd
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Choshu Industry Co Ltd
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

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Abstract

PROBLEM TO BE SOLVED: To provide a photovoltaic generator (solar battery) which can be manufactured at a relatively low cost without degrading a power generation efficiency.SOLUTION: In a photovoltaic generator 10 having a photovoltaic element 11 in which transparent conductive oxides 18 formed on a front and rear surfaces, and for generating power by light irradiation; and collector members provided on the front and rear surfaces of the photovoltaic element 11, only metal conductive lines 27 stretched in parallel on the transparent conductive oxide 18 at the front surface at a predetermined pitch, are used for the collector member at the front surface, and metal conductive lines 27 and the transparent conductive oxide 18 are joined each other by using a conductive adhesive (for example silver paste) 28.

Description

本発明はヘテロ接合光発電装置に適用し、金属(例えば、銀)ペーストの使用量がより少なく、更に直列抵抗降下による電力損失の解消、及び受光面積の拡大による発電効率の向上を図る光発電装置に関する。 The present invention is applied to a heterojunction photovoltaic device and uses less metal (for example, silver) paste, further eliminates power loss due to series resistance drop, and improves power generation efficiency by increasing the light receiving area. Relates to the device.

現在、地球温暖化対策として世界全体で大幅なCO排出量削減が唱えられ、CO等のガスを発生しないクリーンなエネルギー源として光発電装置が注目されている。その中で、発電効率の高いヘテロ接合の光発電装置が広く用いられている。なお、この光発電装置は、複数の光発電素子(ヘテロジャンクション光発電素子)11を有し、光発電素子11は、図5に示すように、n型単結晶シリコン基板(c−Si)12の一面(上面)に、真性アモルファスシリコン層(i層)13を介してp型非晶質シリコン系薄膜層14を、n型単結晶シリコン基板(c−Si)12の他面(下面)に真性アモルファスシリコン層(i層)15を介してn型非晶質シリコン系薄膜層16を備え、p型非晶質シリコン系薄膜層14の上及びn型非晶質シリコン系薄膜層16の下にそれぞれ透明導電酸化物(Transparent Conductive Oxide)18、19を有している。 Currently, drastic reduction of CO 2 emissions is advocated as a global warming countermeasure, and photovoltaic devices are attracting attention as a clean energy source that does not generate CO 2 or other gases. Among them, a heterojunction photovoltaic power generation device with high power generation efficiency is widely used. This photovoltaic device has a plurality of photovoltaic elements (heterojunction photovoltaic elements) 11, and the photovoltaic element 11 is an n-type single crystal silicon substrate (c-Si) 12 as shown in FIG. A p-type amorphous silicon thin film layer 14 is disposed on one surface (upper surface) of the n-type single crystal silicon substrate (c-Si) 12 via an intrinsic amorphous silicon layer (i layer) 13. An n-type amorphous silicon thin film layer 16 is provided via an intrinsic amorphous silicon layer (i layer) 15, above the p type amorphous silicon thin film layer 14 and below the n type amorphous silicon thin film layer 16. Respectively have transparent conductive oxides 18 and 19.

図6(A)、(B)に示すように、透明導電酸化物18、19の表面には、発生した電力を集めるためのフィンガー電極21とこのフィンガー電極21に接続されるバスバー電極22が設けられている(特許文献1、2参照)。そして、このフィンガー電極21(通常の幅が50〜100μm)とバスバー電極22(通常の幅が0.5〜2mm)はスクリーン印刷によって同時に形成される。なお、複数の光発電素子11はインターコネクター25を介して直列に接続され、全体の光発電装置の発電電圧を高めている。 As shown in FIGS. 6A and 6B, finger electrodes 21 for collecting generated power and bus bar electrodes 22 connected to the finger electrodes 21 are provided on the surfaces of the transparent conductive oxides 18 and 19. (See Patent Documents 1 and 2). And this finger electrode 21 (normal width is 50-100 micrometers) and the bus-bar electrode 22 (normal width is 0.5-2 mm) are formed simultaneously by screen printing. The plurality of photovoltaic elements 11 are connected in series via the interconnector 25 to increase the power generation voltage of the entire photovoltaic apparatus.

特開2005−317886号公報JP 2005-317886 A 特開2012−54442号公報JP 2012-54442 A

しかしながら、フィンガー電極21及びバスバー電極22は銀ペーストによって構成され、インターコネクター25は金属であるので、非透光性であり、発電に有効な光を遮蔽する。更に、フィンガー電極21の幅は50〜100μm程度で細くしているが、同一断面積では通常の金属導体(例えば、銅)等より電気抵抗が大きく抵抗損が発生する。従って、フィンガー電極21とバスバー電極22の断面積を大きくすることが光発電装置セル(光発電素子11)の効率を増加させることになる。そこで、複数回スクリーン印刷を行って、比較的幅が狭い状態で、フィンガー電極21及びバスバー電極22の厚み(高さ)を増すことも可能であるが、銀ペーストの量が増加して原料高となってしまうという問題がある。 However, since the finger electrode 21 and the bus bar electrode 22 are made of silver paste and the interconnector 25 is a metal, it is non-translucent and shields light that is effective for power generation. Furthermore, although the width of the finger electrode 21 is reduced to about 50 to 100 μm, the electrical resistance is larger than that of a normal metal conductor (for example, copper) or the like, and resistance loss occurs in the same cross-sectional area. Therefore, increasing the cross-sectional area of the finger electrode 21 and the bus bar electrode 22 increases the efficiency of the photovoltaic device cell (photovoltaic element 11). Therefore, it is possible to increase the thickness (height) of the finger electrode 21 and the bus bar electrode 22 in a relatively narrow state by performing screen printing a plurality of times. There is a problem of becoming.

本発明はかかる事情に鑑みてなされたもので、発電効率を低下させないで、比較的安価に製造できる光発電装置を提供することを目的とする。 The present invention has been made in view of such circumstances, and an object of the present invention is to provide a photovoltaic power generation apparatus that can be manufactured relatively inexpensively without reducing power generation efficiency.

前記目的に沿う第1の発明に係る光発電装置は、表裏に透明導電酸化物が形成され、光照射によって電力を発生する光発電素子と、該光発電素子の表裏に設けられた集電部材とを有する光発電装置において、
表側の前記集電部材に、表側の前記透明導電酸化物上に所定ピッチで平行に張られた金属導体線のみを用い、該金属導体線と前記透明導電酸化物とは導電性接着剤を用いて接合されている。従って、この発明においては、従来のフィンガー電極は用いられておらず、光発電素子の表側の集電部材は平行配置された金属導体線のみが用いられている。
The photovoltaic device according to the first invention that meets the above-mentioned object is a photovoltaic device in which a transparent conductive oxide is formed on the front and back sides and generates electric power by light irradiation, and a current collecting member provided on the front and back of the photovoltaic device In the photovoltaic device having
For the current collecting member on the front side, only a metal conductor wire stretched in parallel at a predetermined pitch on the transparent conductive oxide on the front side is used, and the metal conductor wire and the transparent conductive oxide use a conductive adhesive. Are joined. Therefore, in this invention, the conventional finger electrode is not used, and only the metal conductor wire arranged in parallel is used for the current collecting member on the front side of the photovoltaic device.

第2の発明に係る光発電装置は、第1の発明に係る光発電装置において、前記金属導体線のピッチは15mm以下でかつ前記金属導体線を接合する前記導電性接着剤の幅の9倍以上のピッチで配置されている。ここで、金属導体線は良導体の必要があり、光発電装置全体を安価にする場合は、銅線(銅合金線を含む)又はアルミニウム線(アルミ合金線を含む)を使用するのが好ましい。また、金属導体線として、銀線又は銀でコートされた銅線を使用することもできる。 A photovoltaic device according to a second invention is the photovoltaic device according to the first invention, wherein the pitch of the metal conductor wire is 15 mm or less and 9 times the width of the conductive adhesive joining the metal conductor wire. They are arranged at the above pitch. Here, the metal conductor wire needs to be a good conductor, and when making the whole photovoltaic apparatus inexpensive, it is preferable to use a copper wire (including a copper alloy wire) or an aluminum wire (including an aluminum alloy wire). Moreover, a silver wire or a copper wire coated with silver can also be used as the metal conductor wire.

第3の発明に係る光発電装置は、第2の発明に係る光発電装置において、前記金属導体線及び前記導電性接着剤によって生じる遮光率は10%以下である。これによって、発電効率は維持される。 The photovoltaic device according to a third aspect of the present invention is the photovoltaic device according to the second aspect of the invention, wherein the light shielding rate generated by the metal conductor wire and the conductive adhesive is 10% or less. Thereby, the power generation efficiency is maintained.

第4の発明に係る光発電装置は、第1〜第3の発明に係る光発電装置において、前記光発電素子の裏側に設けられた前記集電部材は金属シートからなっている。なお、この金属シートは導電性接着剤を用いて光発電素子の裏側に貼着されている。 A photovoltaic device according to a fourth invention is the photovoltaic device according to the first to third inventions, wherein the current collecting member provided on the back side of the photovoltaic element is made of a metal sheet. In addition, this metal sheet is stuck to the back side of the photovoltaic device using a conductive adhesive.

そして、第5の発明に係る光発電装置は、第4の発明に係る光発電装置において、前記光発電素子の表側に配置されている前記金属導体線は、その一端部が折れ曲がって隣に配置される前記光発電素子の前記金属シートに接続されている。 And the photovoltaic device which concerns on 5th invention is the photovoltaic device which concerns on 4th invention. WHEREIN: The said metal conductor wire arrange | positioned at the front side of the said photovoltaic element is bent and arrange | positioned adjacently Connected to the metal sheet of the photovoltaic device.

本発明に係る光発電装置においては、従来、導電性接着剤(例えば、銀ペースト)を用いてフィンガー電極及びバスバー電極を構成し、このため多量の導電性接着剤を使用していたが、これらを省くことによって導電性接着剤の使用量が激減した。これによって、光発電装置の製造コストを下げることができた。 In the photovoltaic device according to the present invention, conventionally, finger electrodes and bus bar electrodes are configured using a conductive adhesive (for example, silver paste), and thus a large amount of conductive adhesive is used. The amount of conductive adhesive used was drastically reduced by omitting. As a result, the manufacturing cost of the photovoltaic power generation apparatus could be reduced.

更に、従来のバスバー電極の代わりに、多数の金属導体線を用いることで、抵抗損の減少を図ることができる。 Furthermore, resistance loss can be reduced by using a large number of metal conductor wires instead of the conventional bus bar electrodes.

本発明の一実施の形態に係る光発電装置の平面図である。It is a top view of the photovoltaic device concerning one embodiment of the present invention. 同側面図である。It is the same side view. (A)は同断面図、(B)は更に好ましい例の拡大断面図である。(A) is the same sectional view, (B) is an enlarged sectional view of a more preferred example. (A)、(B)はそれぞれ本発明の他の実施の形態に係る光発電装置の断面図、同変形例の断面図である。(A), (B) is sectional drawing of the photovoltaic device which concerns on other embodiment of this invention, respectively, and sectional drawing of the modification. 従来例に係る光発電装置に用いる光発電素子の模式図である。It is a schematic diagram of the photovoltaic device used for the photovoltaic device which concerns on a prior art example. (A)は同光発電装置の平面図、(B)は同光発電装置の側面図である。(A) is a top view of the photovoltaic power generation apparatus, (B) is a side view of the photovoltaic power generation apparatus.

続いて、添付した図面を参照しながら、本発明を具体化した実施の形態について説明する。
図1、図2、図3(A)に示すように、本発明の一実施の形態に係る光発電装置10は、直列に接続される光発電素子11を有している。この光発電素子11は図5に示す構造と同一で、中央にn型単結晶シリコン基板(c−Si)12を、その上下に真性アモルファスシリコン層13、15を、更にその外側にそれぞれp型非晶質シリコン系薄膜層14とn型非晶質シリコン系薄膜層16を有し、上下面にはそれぞれ透明導電酸化物18、19を有している。
Next, embodiments of the present invention will be described with reference to the accompanying drawings.
As shown in FIGS. 1, 2, and 3A, a photovoltaic device 10 according to an embodiment of the present invention has photovoltaic elements 11 connected in series. This photovoltaic element 11 has the same structure as that shown in FIG. 5, an n-type single crystal silicon substrate (c-Si) 12 at the center, intrinsic amorphous silicon layers 13 and 15 above and below it, and p-type on the outside. An amorphous silicon thin film layer 14 and an n-type amorphous silicon thin film layer 16 are provided, and transparent conductive oxides 18 and 19 are provided on the upper and lower surfaces, respectively.

この光発電素子11の表面に光(例えば、太陽光)を当てた場合、表裏の透明導電酸化物18、19の間に電位差を生じて電力が発生するが、一つの光発電素子11の起電力は、約0.7Vと小さいので、複数の光発電素子11を直列に接続し、所定の電圧を得るようにしている。これらの技術については、周知であるので、詳しい説明を省略する。 When light (for example, sunlight) is applied to the surface of the photovoltaic element 11, a potential difference is generated between the transparent conductive oxides 18 and 19 on the front and back sides to generate electric power. Since the electric power is as small as about 0.7 V, a plurality of photovoltaic elements 11 are connected in series to obtain a predetermined voltage. Since these techniques are well known, detailed description thereof is omitted.

光発電素子11の表裏には、透明導電酸化物18、19を有し、図1、図2に示すように、透明導電酸化物18の表面には、金属導体線の一例である銅線27(表側の集電部材を構成している)が所定間隔で平行に多数配置され、導電性接着剤(例えば、銀ペースト)28を用いて透明導電酸化物18に接合されている。導電性接着剤28は非透光であるので、多数の銅線27を用いると、透明導電酸化物18の表面の遮光率が増加する(即ち、光線の透過率が悪くなる)。 The photovoltaic element 11 has transparent conductive oxides 18 and 19 on the front and back sides thereof. As shown in FIGS. 1 and 2, the surface of the transparent conductive oxide 18 has a copper wire 27 as an example of a metal conductor wire. A large number of (which constitutes the current collecting member on the front side) are arranged in parallel at predetermined intervals, and are joined to the transparent conductive oxide 18 using a conductive adhesive (for example, silver paste) 28. Since the conductive adhesive 28 is non-translucent, when a large number of copper wires 27 are used, the light shielding rate on the surface of the transparent conductive oxide 18 increases (that is, the light transmittance decreases).

図3に示すように、平行に張られた銅線27のピッチをp、導電性接着剤28の最大幅をwとすると、遮光率は、(w/p)×100(%)となるので、遮光率を10%以下にするのが好ましい。また、銅線27の直径dは100〜500μmのものを使用するのが好ましく、銅線27のピッチpは15mm以下とするのが好ましい。なお、銅線27のピッチpが15mmを超えると、透明導電酸化物18の表面抵抗が効いて電圧降下が発生し、発電効率が下がる。なお、ピッチpは導電性接着剤28の幅wの9倍以上として光透過率を一定以上にしている。 As shown in FIG. 3, when the pitch of the copper wires 27 stretched in parallel is p and the maximum width of the conductive adhesive 28 is w, the light shielding rate is (w / p) × 100 (%). The light shielding rate is preferably 10% or less. The copper wire 27 preferably has a diameter d of 100 to 500 μm, and the pitch p of the copper wire 27 is preferably 15 mm or less. In addition, when the pitch p of the copper wire 27 exceeds 15 mm, the surface resistance of the transparent conductive oxide 18 works, a voltage drop occurs, and the power generation efficiency decreases. The pitch p is 9 times or more the width w of the conductive adhesive 28, so that the light transmittance is a certain level or more.

また、遮光率が10%を超えると、遮光率に比例して発電効率が下がるので、導電性接着剤28の全体の面積は、従来のフィンガー電極及びバスバー電極を用いるタイプと同等若しくはそれ以下とするのが好ましい。 If the light shielding rate exceeds 10%, the power generation efficiency decreases in proportion to the light shielding rate. Therefore, the entire area of the conductive adhesive 28 is equal to or less than that of a type using conventional finger electrodes and bus bar electrodes. It is preferable to do this.

この実施の形態では、図3(A)に示すように、銅線27の周囲に導電性接着剤28が比較的厚く塗布された素材を使用し、接合にあっては張設状態の複数の銅線27を光発電素子11の表面に被せるようにして接合したが、図3(B)に示すように、銅線27の下部にのみ導電性接着剤29を付着し、この状態で、銅線27を光発電素子11の上に被せるようにして接合することもできる。これによって、導電性接着剤29の最大幅をw2とすると、遮光率が(w2/p)×100(%)となるので、遮光率を下げることができ、場合によっては、銅線27のピッチを狭めて、電力損失を減らした光発電素子とすることもできる。 In this embodiment, as shown in FIG. 3 (A), a material in which a conductive adhesive 28 is applied relatively thickly around the copper wire 27 is used. The copper wire 27 was joined so as to cover the surface of the photovoltaic element 11, but as shown in FIG. 3B, a conductive adhesive 29 was attached only to the lower portion of the copper wire 27, and in this state, the copper wire 27 It is also possible to join the wire 27 so as to cover the photovoltaic element 11. As a result, when the maximum width of the conductive adhesive 29 is w2, the light shielding rate is (w2 / p) × 100 (%), so that the light shielding rate can be lowered. In some cases, the pitch of the copper wire 27 The photovoltaic device can also be reduced by reducing the power loss.

図4(A)には、本発明の他の実施の形態に係る光発電装置32の一部断面を示すが、光発電素子11の表面側には、金属導体線の一例である断面矩形の銅線33が使用され、導電性接着剤34は銅線33の底部分のみにある。これによって、銅線33の電気抵抗を下げると共に、導電性接着剤34の幅を小さくして、遮光率を小さくしている。なお、断面矩形の銅線は、図4(B)に示すように、幅狭で高さの高いものがより効果的である。 FIG. 4A shows a partial cross section of a photovoltaic device 32 according to another embodiment of the present invention. On the surface side of the photovoltaic device 11, a rectangular section that is an example of a metal conductor wire is shown. Copper wire 33 is used and the conductive adhesive 34 is only on the bottom portion of the copper wire 33. As a result, the electrical resistance of the copper wire 33 is lowered, and the width of the conductive adhesive 34 is reduced to reduce the light shielding rate. In addition, as shown in FIG. 4B, a copper wire having a rectangular cross section is more effective if it is narrow and high in height.

図1、図2に示すように、光発電素子11の裏側には、裏側の集電部材を構成するアルミ箔(金属シートの一例)36が接合されている。この場合の接着剤にも銀ペーストを使用することができるが、他の安価な導電性接着剤でもよい。アルミ箔36は光発電素子11から一部突出して、その部分に、隣に配置される光発電素子11の金属導体線(銅線27、33)が、その一端部を折り曲げて接合されている。この接合は、銀ペーストを用いてもよい。 As shown in FIGS. 1 and 2, an aluminum foil (an example of a metal sheet) 36 constituting a current collecting member on the back side is joined to the back side of the photovoltaic element 11. A silver paste can also be used as the adhesive in this case, but other inexpensive conductive adhesives may be used. A part of the aluminum foil 36 protrudes from the photovoltaic element 11, and a metal conductor wire (copper wires 27, 33) of the photovoltaic element 11 disposed next to the aluminum foil 36 is bent and joined at one end. . This bonding may use a silver paste.

この実施の形態においては、従来のように集電部材(即ち、バスバー電極)に導電性接着剤を用いておらず、金属導体線を用いているので、折り曲げることが可能となり、インターコネクター等が不要となり、より簡単に製造できる。 In this embodiment, since the current collecting member (that is, the bus bar electrode) does not use a conductive adhesive and uses a metal conductor wire, it can be bent and an interconnector or the like can be used. It becomes unnecessary and can be manufactured more easily.

また、透明導電酸化物19の表面に金属シートを貼らないで、導電材料をめっき又は真空蒸着して金属膜を形成することもできるが、この場合も、金属導体線の端部を金属膜に接合することは可能となる。 In addition, it is possible to form a metal film by plating or vacuum-depositing a conductive material without attaching a metal sheet to the surface of the transparent conductive oxide 19, but in this case, the end portion of the metal conductor wire is used as the metal film. It is possible to join.

本発明の作用、効果を確認するために行った実施例を表1に示すが、本発明の一実施の形態は、No.4の形態に属する。No.1、2は従来のバスバー電極を有する場合、No3は、フィンガー電極はそのままで、インターコネクターの代わりに銅線を用いた場合を示す。光発電素子の開口率(1−遮光率)を約90〜92%として、電流(Isc)、電圧(Voc)、FF、効率(η)の値を示すが、本発明の一実施の形態に係る光発電装置であっても、性能は従来型の光発電装置と殆ど変わらない。一方、銀ペーストの使用量を0にすることによって、製造単価を下げることができる。 Examples performed for confirming the operation and effect of the present invention are shown in Table 1. It belongs to 4 forms. No. Nos. 1 and 2 have a conventional bus bar electrode, and No. 3 shows a case where a finger wire is used as it is and a copper wire is used instead of an interconnector. The values of current (Isc), voltage (Voc), FF, and efficiency (η) are shown assuming that the aperture ratio (1-light shielding ratio) of the photovoltaic element is about 90 to 92%. Even with such a photovoltaic device, the performance is almost the same as that of a conventional photovoltaic device. On the other hand, the manufacturing unit price can be lowered by reducing the amount of silver paste used to zero.

Figure 2014103300
Figure 2014103300

本発明は前記した実施の形態に限定されるものではなく、本発明の要旨を変更しない範囲でその構成を変更することもできる。例えば、前記実施の形態においては、金属導体線として銅線を用いているが、アルミ線等を使用できる。更に、金属導体線の表面にはめっきを施すこともできる。また、導電性接着剤として銀ペーストを用いているが、他の導電性接着剤(ニッケル粉、銀コートされた銅粉を含有したもの)を使用することもできる。 The present invention is not limited to the above-described embodiment, and the configuration thereof can be changed without changing the gist of the present invention. For example, in the embodiment, a copper wire is used as the metal conductor wire, but an aluminum wire or the like can be used. Further, the surface of the metal conductor wire can be plated. Moreover, although silver paste is used as a conductive adhesive, other conductive adhesives (containing nickel powder and silver-coated copper powder) can also be used.

また、前記実施の形態では、光入射側を上面として、p型非晶質シリコン系薄膜層側から光を入射させるようにしていたが、逆に光入射側を下面として、n型非晶質シリコン系薄膜層側から光を入射させる光発電素子を用いる場合も本発明は適用される。 In the above embodiment, light is incident from the p-type amorphous silicon thin film layer side with the light incident side as the upper surface. Conversely, the n-type amorphous material with the light incident side as the lower surface. The present invention is also applied to the case where a photovoltaic element that makes light incident from the silicon-based thin film layer side is used.

10:光発電装置、11:光発電素子、12:n型単結晶シリコン基板、13:真性アモルファスシリコン層、14:p型非晶質シリコン系薄膜層、15:真性アモルファスシリコン層、16:n型非晶質シリコン系薄膜層、18、19:透明導電酸化物、21:フィンガー電極、22:バスバー電極、25:インターコネクター、27:銅線、28、29:導電性接着剤、32:光発電装置、33:銅線、34:導電性接着剤、36:アルミ箔 10: photovoltaic device, 11: photovoltaic device, 12: n-type single crystal silicon substrate, 13: intrinsic amorphous silicon layer, 14: p-type amorphous silicon thin film layer, 15: intrinsic amorphous silicon layer, 16: n Type amorphous silicon thin film layer, 18, 19: transparent conductive oxide, 21: finger electrode, 22: bus bar electrode, 25: interconnector, 27: copper wire, 28, 29: conductive adhesive, 32: light Power generation device, 33: copper wire, 34: conductive adhesive, 36: aluminum foil

Claims (5)

表裏に透明導電酸化物が形成され、光照射によって電力を発生する光発電素子と、該光発電素子の表裏に設けられた集電部材とを有する光発電装置において、
表側の前記集電部材に、表側の前記透明導電酸化物上に所定ピッチで平行に張られた金属導体線のみを用い、該金属導体線と前記透明導電酸化物とは導電性接着剤を用いて接合されていることを特徴とする光発電装置。
In the photovoltaic device having a transparent conductive oxide formed on the front and back, and a photovoltaic element that generates power by light irradiation, and a current collecting member provided on the front and back of the photovoltaic element,
For the current collecting member on the front side, only a metal conductor wire stretched in parallel at a predetermined pitch on the transparent conductive oxide on the front side is used, and the metal conductor wire and the transparent conductive oxide use a conductive adhesive. A photovoltaic device characterized by being joined together.
請求項1記載の光発電装置において、前記金属導体線のピッチは15mm以下でかつ前記金属導体線を接合する前記導電性接着剤の幅の9倍以上のピッチで配置されていることを特徴とする光発電装置。 2. The photovoltaic device according to claim 1, wherein the pitch of the metal conductor wires is 15 mm or less and the pitch is 9 times or more the width of the conductive adhesive for joining the metal conductor wires. Photovoltaic power generator. 請求項2記載の光発電装置において、前記金属導体線及び前記導電性接着剤によって生じる遮光率は10%以下であることを特徴とする光発電装置。 3. The photovoltaic device according to claim 2, wherein a light shielding rate caused by the metal conductor wire and the conductive adhesive is 10% or less. 請求項1〜3のいずれか1項に記載の光発電装置において、前記光発電素子の裏側に設けられた前記集電部材は金属シートからなっていることを特徴とする光発電装置。 The photovoltaic device of any one of Claims 1-3 WHEREIN: The said current collection member provided in the back side of the said photovoltaic device consists of metal sheets, The photovoltaic device characterized by the above-mentioned. 請求項4記載の光発電装置において、前記光発電素子の表側に配置されている前記金属導体線は、その一端部が折れ曲がって隣に配置される前記光発電素子の前記金属シートに接続されていることを特徴とする光発電装置。 5. The photovoltaic device according to claim 4, wherein the metal conductor wire disposed on the front side of the photovoltaic element is connected to the metal sheet of the photovoltaic element that is bent at one end and adjacent to the photovoltaic element. A photovoltaic power generation device characterized by comprising:
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