JP2014176800A - Mist separator, resist coating device and production method of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a mist separator in which the surface area of a filter is large.SOLUTION: A mist separator MS is provided with a cylindrical first filter FL1 and a second filter FL2. The second filter FL2 is formed in a space SP. The space SP is surround with the first filter FL1 in plan view and a space overlapping the first filter FL1 in a height direction of the first filter FL1. The second filter FL2 is formed by a sheet-like filter and formed so that the second filter FL2 has a protrusion rising in a direction toward one end EG1 of the first filter FL1 from the other end EG2 of the first filter FL1.

Description

  The present invention relates to a mist separator, a resist coating apparatus, and a method for manufacturing a semiconductor device, and is a technique applicable to, for example, resist coating.

  Various types of filters are currently proposed for separating substances contained in mist, including resist mist, from other substances. Patent Document 1 describes a mist collector filter including a rectifying plate formed in an inverted conical shape. Patent Document 2 describes a mist collecting device provided with a mesh-like twisted plate. Patent Document 3 describes a resist coating apparatus in which a mist trap is provided in the vicinity of an exhaust hole of an exhaust pipe. Patent Document 4 describes a particulate matter filter made of a ceramic porous body and formed in a conical container shape. Patent Document 5 describes an intake / exhaust valve including a conical filter. Patent Document 6 describes a grease filter formed in a conical shape.

Japanese Utility Model Publication No. 4-134417 Japanese Utility Model Publication No. 5-76520 JP 2003-236445 A JP 2004-332581 A JP 2006-316809 A JP 2009-172563 A

  A mist separator may be used for collecting the mist. In order to improve the collection property of the mist in the mist separator, it is required to increase the surface area of the filter in the mist separator. The present inventors examined increasing the surface area of the filter in the mist separator.

  Other problems and novel features will become apparent from the description of the specification and the accompanying drawings.

  According to one embodiment, the mist separator includes a cylindrical first filter and a second filter. The second filter is formed in a space surrounded by the first filter in a plan view and overlapping the first filter in the height direction of the first filter. The second filter is formed by a sheet-like filter. And the 2nd filter is formed so that it may have a convex part raised in the direction which goes to the end of the 1st filter from the other end of the 1st filter.

  According to the one embodiment, a mist separator having a high mist collecting property is provided.

It is a schematic perspective view which shows the mist separator in 1st Embodiment. It is sectional drawing of the mist separator shown by FIG. It is a schematic perspective view which shows an example of the manufacturing method of the mist separator shown by FIG. It is a schematic perspective view which shows the mist separator in 2nd Embodiment. It is sectional drawing of the mist separator shown by FIG. It is a schematic perspective view which shows an example of the manufacturing method of a 3rd filter. It is sectional drawing which shows the resist coating device in 3rd Embodiment. It is an enlarged view of the vicinity of the mist separator shown by FIG. It is sectional drawing which shows the semiconductor device in 3rd Embodiment. FIG. 10 is a cross-sectional view showing a method for manufacturing the semiconductor device shown in FIG. 9. FIG. 10 is a cross-sectional view showing a method for manufacturing the semiconductor device shown in FIG. 9. FIG. 10 is a cross-sectional view showing a method for manufacturing the semiconductor device shown in FIG. 9.

  Hereinafter, embodiments will be described with reference to the drawings. In all the drawings, the same reference numerals are given to the same components, and the description will be omitted as appropriate.

(First embodiment)
FIG. 1 is a schematic perspective view showing a mist separator MS in the first embodiment. FIG. 1 is a schematic diagram showing a mist separator MS, and the configuration of the mist separator MS is not limited to that shown in FIG. FIG. 2 is a cross-sectional view of the vicinity of the center of the mist separator MS shown in FIG.

  The mist separator MS includes a first filter FL1 and a second filter FL2. The first filter FL1 is formed in a cylindrical shape. An opening OP is formed at one end EG1 of the first filter FL1. The second filter FL2 is formed in the space SP. The space SP is a space surrounded by the first filter FL1 in plan view and overlapping the first filter FL1 in the height direction of the first filter FL1. A plurality of holes HL1 are formed in the sidewall SW of the first filter FL1. The hole HL1 passes through the side wall SW of the first filter FL1. The area surrounded by the one end EG1 of the first filter FL1 in plan view is larger than the area surrounded by the other end EG2 of the first filter FL2 in plan view. The space SP is divided into two spaces (a space SP1 and a space SP2) by the second filter FL2. The second filter FL2 is formed by a sheet-like filter. The sheet-like filter has a plurality of through holes HL2. The second filter FL2 is formed so as to have a convex portion protruding in the direction from the other end EG2 of the first filter FL1 to the one end EG1 of the first filter FL1.

  The second filter FL2 of the mist separator MS is formed so as to have a convex portion protruding in the direction from the other end EG2 of the first filter FL1 toward the one end EG1 of the first filter FL1. In this case, the surface area of the second filter FL2 can be made larger than when the second filter FL2 is formed in a planar shape along the other end EG2 of the first filter FL1. As a result, the mist collecting property in the mist separator MS is high.

  The mist separator MS in this embodiment will be described in detail with reference to FIGS. As shown in FIGS. 1 and 2, the mist separator MS includes a first filter FL1 and a second filter FL2.

  The first filter FL1 is formed in a cylindrical shape. An opening OP is formed at one end EG1 of the first filter FL1. The first filter FL1 may be formed in a cylindrical shape as shown in FIG. As another example, the first filter FL1 may be formed so that the cross-sectional shape of the first filter FL1 in a plan view is a polygon (for example, a triangle or a regular octagon) or an ellipse. The first filter FL1 may be made of metal. In FIG. 1, the side wall SW of the first filter FL1 is not depicted where the second filter FL2 is depicted for the convenience of explanation. The sidewall SW of the first filter FL1 shown in FIG. 1 covers the second filter FL2 as shown in FIG.

  The area surrounded by the one end EG1 of the first filter FL1 in plan view is larger than the area surrounded by the other end EG2 of the first filter FL2 in plan view. When the first filter FL1 is formed in a cylindrical shape as shown in FIG. 1, the diameter d1 at one end EG1 of the first filter FL1 is larger than the diameter d2 at the other end EG2 of the first filter FL2. (D1> d2). As shown in FIG. 1, the area surrounded by the first filter FL1 in plan view may change in a tapered shape from one end EG1 of the first filter FL1 toward the other end EG2 of the first filter FL1. As another example, the area surrounded by the first filter FL1 in plan view may increase after decreasing from one end EG1 of the first filter FL1 toward the other end EG2 of the first filter FL1. The area surrounded by the first filter FL1 in plan view may increase after increasing from one end EG1 of the first filter FL1 toward the other end EG2 of the first filter FL1, and then decrease. The area surrounded by the first filter FL1 in plan view may change stepwise from one end EG1 of the first filter FL1 toward the other end EG2 of the first filter FL1. Further, the center of the region surrounded by the one end EG1 of the first filter FL1 in plan view is the same as the center of the region surrounded by the other end EG2 of the first filter FL1 in plan view as shown in FIG. You may do it.

  A plurality of holes HL1 are formed in the sidewall SW of the first filter FL1. The hole HL1 passes through the side wall SW of the first filter FL1. The hole HL1 has a function of capturing the mist that has reached the mist separator MS. Therefore, the diameter of the hole HL1 is preferably a size suitable for the mist captured by the hole HL1. The diameter of the hole HL1 may be constant from the inside to the outside of the side wall SW of the first filter FL1, may be increased, or may be decreased. When the diameter of the hole HL1 decreases from the inside of the side wall SW of the first filter FL1 to the outside, large particles contained in the mist are easily captured near the inside of the first filter FL1, while Small particles are easily trapped near the outside of the first filter FL1. In this way, efficient mist capture is possible. Examples of the shape of the hole HL1 include a circle, an ellipse, or a polygon (for example, a square). The plurality of holes HL1 may be arranged irregularly. As another example, the plurality of holes HL1 may be arranged on lattice points. In this case, the hole HL1 may not be formed on some points of the lattice points, or may be formed on all points of the lattice points. The plurality of holes HL1 may be formed on points arranged in a staggered pattern. In this case, the holes HL1 may not be formed on some of the points arranged in a staggered pattern, or are formed on all the points arranged in a staggered pattern. May be. Such a hole HL1 may be a hole formed in a sheet-like member constituting the first filter FL1. As another example, the hole HL1 may be a mesh gap in which a plurality of linear members constituting the first filter FL1 are knitted together. In this case, the first filter FL1 is formed in a mesh shape. In FIG. 1, the holes HL <b> 1 formed in a quadrangular shape are arranged on the lattice points. In FIG. 1, the hole HL1 is not partially depicted for convenience of explanation. In the mist separator MS in FIG. 1, the hole HL1 is formed in the entire side wall SW.

  The second filter FL2 is formed in the space SP as shown in FIG. The space SP is a space surrounded by the first filter FL1 in plan view and overlapping the first filter FL1 in the height direction of the first filter FL1. As shown in FIG. 2, the space SP is partitioned into two spaces (a space SP1 and a space SP2) by the second filter FL2. The space SP1 is a space in which the opening OP is provided. The second filter FL2 is formed by a sheet-like filter. The sheet-like filter has a plurality of through holes HL2. The second filter FL2 is formed so as to have a convex portion protruding in the direction from the other end EG2 of the first filter FL1 to the one end EG1 of the first filter FL1. The second filter FL2 may be made of metal. In FIG. 1, the second filter FL2 is not depicted in a part near the other end EG2 of the first filter FL1 for convenience of explanation. The second filter FL2 in FIG. 1 is in contact with the entire other end EG2 of the first filter FL1.

  The shape of the second filter FL2 is not limited to a specific shape as long as the second filter FL2 can have a larger surface area than the second filter FL2 is formed in a planar shape. As shown in FIG. 2, the area surrounded by the second filter FL2 in the second filter FL2 changes in a tapered shape from the other end EG2 of the first filter FL1 toward the one end EG1 of the first filter FL1. It may be formed as follows. The second filter FL2 may be formed such that the area surrounded by the second filter FL2 in a plan view changes stepwise from the other end EG2 of the first filter FL1 toward the one end EG1 of the first filter FL1. . The second filter FL2 is formed so that the area surrounded by the second filter FL2 in a plan view increases after decreasing from the other end EG2 of the first filter FL1 toward the one end EG1 of the first filter FL1, and then decreases again. May be. The second filter FL2 may be formed in a conical shape as shown in FIG. The second filter FL2 may be formed such that the cross-sectional shape of the second filter FL2 in plan view is a polygon (for example, a triangle or a regular octagon) or an ellipse. The second filter FL2 may be formed in a dome shape. As shown in FIG. 2, the second filter EL2 may be connected to the first filter FL1 at the other end EG2 of the first filter FL1. In this regard, the place where the first filter FL1 and the second filter FL2 are connected may be any place on the inner wall of the side wall SW of the first filter FL1 as long as the first filter FL is formed in the space SP. . The surface area of the second filter FL2 increases as the height h2 of the second filter FL2 increases. The relationship between the height h2 of the second filter FL2 and the height h1 of the first filter FL1 may be, for example, 0.8 ≦ h2 / h1 <1.0.

  A plurality of through holes HL2 are formed in the second filter FL2. The through hole HL2 passes through the second filter FL2. The through hole HL2 has a function of capturing the mist that has reached the mist separator MS. Therefore, the diameter of the through hole HL2 is preferably a size suitable for the mist captured by the through hole HL2. The diameter of the through hole HL2 may be constant or increased from the surface where the second filter FL2 faces the space SP1 toward the surface where the second filter FL2 faces the space SP2. It may be good or decreased. When the diameter of the through hole HL2 decreases from the surface where the second filter FL2 faces the space SP1 toward the surface where the second filter FL2 faces the space SP2, large particles contained in the mist are While the second filter FL2 is likely to be captured near the surface facing the space SP1, small particles contained in the mist are likely to be captured near the surface where the second filter FL2 faces the space SP2. In this way, efficient mist capture is possible. Examples of the shape of the through hole HL2 include a circle, an ellipse, or a polygon (for example, a square). The plurality of through holes HL2 may be arranged irregularly. As another example, the plurality of through holes HL2 may be arranged on lattice points. In this case, the through-hole HL2 may not be formed on some points of the lattice points, or may be formed on all points of the lattice points. The plurality of through-holes HL2 may be formed on points arranged in a staggered pattern. In this case, the through holes HL2 may not be formed on some of the points arranged in a staggered pattern, or are formed on all the points arranged in a staggered pattern. It may be. Such a through hole HL2 may be a hole formed in a sheet-like member constituting the second filter FL2. As another example, the through hole HL2 may be a mesh gap formed by knitting a plurality of linear members constituting the second filter FL2. In this case, the second filter FL2 is formed in a mesh shape. In FIG. 1, the through holes HL <b> 2 formed in a quadrangular shape are arranged on the lattice points. In FIG. 1, the through hole HL2 is not partially depicted for convenience of explanation. In the mist separator MS in FIG. 1, the through hole HL2 is formed in the entire second filter FL2.

  Next, a method for manufacturing the mist separator MS will be described. FIG. 3 is a schematic perspective view showing an example of a manufacturing method of the mist separator MS. The first filter FL1 and the second filter FL2 may be formed by different members. In this case, the first filter FL1 and the second filter FL2 may be formed separately as shown in FIG. The first filter FL1 and the second filter FL2 that are separately formed may be connected via a connecting member (for example, an adhesive). Alternatively, the second filter FL2 may be fixed to the first filter FL1 by being sandwiched between the inner walls of the side wall SW of the first filter FL1 without using a connection member. Thereby, a mist separator MS is formed (FIG. 3B). At this time, the second filter FL2 is connected to the side wall SW of the first filter FL1. As shown in FIG. 3, the second filter FL2 may be connected at the other end EG2 of the first filter FL2. On the other hand, the first filter FL1 and the second filter FL2 may be formed of the same member. In this case, the second filter FL2 is continuously formed from the other end EG2 of the first filter FL1. The mist separator MS in which the first filter FL1 and the second filter FL2 are continuously formed includes a step of forming a cylindrical first filter FL1 having a bottom portion, and a bottom portion of the first filter FL1 inward. And the step of bending.

  According to the mist separator MS in the present embodiment, the surface area of the second filter FL2 can be increased as compared with the case where the second filter FL2 is formed in a planar shape along the other end EG2 of the first filter FL1. In addition, the second filter FL2 is raised on the inside rather than the outside of the first filter FL1. For this reason, the space occupied by the mist separator MS in the present embodiment is not different from the case where the second filter FL2 is formed in a planar shape along the other end of the first filter FL1. As described above, according to the mist separator MS in the present embodiment, the occupation space can be reduced while efficiently collecting the mist.

(Second Embodiment)
FIG. 4 is a schematic perspective view showing a mist separator MS in the second embodiment. FIG. 4 is a schematic diagram showing the mist separator MS, and the configuration of the mist separator MS is not limited to that shown in FIG. FIG. 5 is a cross-sectional view of the mist separator MS shown in FIG. The cross-sectional view shown in FIG. 5 is a cross-sectional view seen in the direction of the filter FL3a. The mist separator MS in the present embodiment has the same configuration as the mist separator MS in the first embodiment, except that the mist separator MS further includes a third filter FL3.

  The mist separator MS in the present embodiment includes a third filter FL3. The third filter FL3 includes a filter FL3a, a filter FL3b, and a filter FL3c. The filters FL3a, FL3b, and FL3c are formed in a sheet shape. A plurality of through holes HL3a are formed in the filter FL3a. The through hole HL3a passes through the filter FL3a. Similarly to the filter FL3a, a plurality of through holes HL3b and a plurality of through holes HL3c (not shown) are formed in the filter FL3b and the filter FL3c. The filters FL3a, FL3b, and FL3c are formed in the space SP1. The filters FL3a, FL3b, and FL3c are formed along the height direction of the first filter FL1. Note that the number of filters included in the third filter FL3 is not limited to three (filter FL3a, filter FL3b, and filter FL3c) as shown in FIG. 4, and may be one or plural. May be. As the number of filters included in the third filter FL3 increases, the surface area of the third filter FL3 increases.

  The mist separator MS in the present embodiment includes a third filter FL3. For this reason, the surface area of the filter in this embodiment is larger than the surface area of the filter of the mist separator MS in the first embodiment. For this reason, according to the mist separator MS in this embodiment, the collection of mist more efficiently than the mist separator MS in the first embodiment is realized.

  The mist separator MS in this embodiment will be described in detail. As shown in FIGS. 4 and 5, the mist separator MS includes a third filter FL3 in addition to the first filter FL1 and the second filter FL2.

  As shown in FIG. 4, the third filter FL3 includes a filter FL3a, a filter FL3b, and a filter FL3c. The filters FL3a, FL3b, and FL3c are formed in a sheet shape. The filters FL3a, FL3b, and FL3c are formed along the height direction of the filter FL1, as shown in FIG. The filter FL3a (filters FL3b and FL3c) is formed in the space SP1, as shown in FIG. The space SP1 is a space on the side where the opening OP is provided in the space SP. Filter FL3a (filters FL3b and FL3c) may be in contact with side wall SW of filter FL1 and filter FL2, as shown in FIG. When filter FL3a (filters FL3b and FL3c) is in contact with side wall SW of filter FL1 and filter FL2, filter FL3a (filters FL3b and FL3c) is stably fixed to filter FL1 and filter FL2. Filters FL3a, FL3b and FL3c may be made of metal.

  A plurality of through holes HL3a are formed in the filter FL3a. The through hole HL3a passes through the filter FL3a. The through hole HL3a has a function of capturing the mist that has reached the mist separator MS. Therefore, the diameter of the through hole HL3a is preferably a size suitable for mist captured by the through hole HL3a. Examples of the shape of the through hole HL3a include a circle, an ellipse, or a polygon (for example, a square). The plurality of through holes HL3a may be arranged irregularly. As another example, the plurality of through holes HL3a may be arranged on lattice points. In this case, the through hole HL3a may not be formed on a part of the lattice points, or may be formed on all the points of the lattice points. The plurality of through-holes HL3a may be formed on points arranged in a staggered pattern. In this case, the through holes HL3a may not be formed on a part of the points arranged in a staggered pattern, or are formed on all the points arranged in a staggered pattern. It may be. Such a through hole HL3a may be a hole formed in a sheet-like member constituting the filter FL3a. As another example, the through-hole HL3a may be a mesh gap in which a plurality of linear members constituting the filter FL3a are knitted together. In this case, the filter FL3a is formed in a mesh shape. 4 and 5, the through holes HL3a formed in a quadrangular shape are arranged on the lattice points. In FIG. 4, the through hole HL3a is not partially depicted for convenience of explanation. In the mist separator MS in FIG. 4, the through hole HL3a is formed in the entire filter FL3a. The matters regarding the through hole HL3a described above are the same for the through holes HL3b and HL3c (not shown) formed in the filters FL3b and FL3c, respectively. The shapes of the through holes HL3a, HL3b, and HL3c may be the same as or different from each other. The arrangement of the through holes HL3a, HL3b, and HL3c may be the same as or different from each other.

  Next, a method for manufacturing the third filter FL3 will be described. FIG. 6 is a schematic perspective view showing an example of a method for manufacturing the third filter FL3. First, a filter FL3a formed in a sheet shape is prepared. As shown in FIG. 6A, the filter FL3a may be formed along the sides S1, S2, S3, and S4. The sides S1 and S2 are in contact with the side wall SW of the first filter FL1. The sides S3 and S4 are in contact with the second filter FL2. Next, a slit is formed in a part of the center S of the filter FL3a (FIG. 6A). The same processing is applied to the filters FL3b and FL3c. Next, the filters FL3a, FL3b, and FL3c are combined through a slit formed at the center of each of them (FIG. 6B). Thereby, the third filter FL3 is formed. The completed third filter FL3 is connected to the first filter FL1 and the second filter FL2. Thereby, the mist separator MS in this embodiment is formed. The third filter FL3 may be connected to the first filter FL1 and the second filter FL2 via a connection member (for example, an adhesive). Alternatively, the third filter FL3 may be fixed to the first filter FL1 by being sandwiched between the inner walls of the side wall SW of the first filter FL1 without using a connection member.

  According to the mist separator MS in the present embodiment, the surface area of the filter can be made larger than the mist separator MS in the first embodiment due to the presence of the third filter FL3. In addition, the third filter FL3 is formed inside the first filter FL1. For this reason, the space occupied by the mist separator MS in the present embodiment is not different from the space occupied by the mist separator MS in the first embodiment. As described above, according to the mist separator MS in the present embodiment, the occupation space can be reduced while efficiently collecting the mist.

(Third embodiment)
FIG. 7 is a cross-sectional view showing a resist coating apparatus AP in the third embodiment. In the present embodiment, the mist separator MS in the first embodiment or the second embodiment is used for the resist coating apparatus AP. The resist coating apparatus AP is an apparatus that applies a resist to a substrate (for example, a semiconductor substrate such as a silicon substrate). When applying the resist to the substrate, excess resist may be discharged as resist mist. In the present embodiment, a mist separator MS is used for such a resist mist.

  As shown in FIG. 7, the resist coating apparatus AP includes a mounting table STG, a discharge pipe DN, a blower BST, and a mist separator MS. The mounting table STG is a table for applying a resist on the substrate by rotating the substrate. The discharge pipe DN is a pipe for discharging the resist mist. An introduction port IO is formed in the discharge pipe DN. The resist mist generated by the resist on the mounting table STG is introduced into the introduction port IO. The discharge pipe DN discharges the resist mist through the introduction port IO. The air blowing unit BST guides resist mist from the mounting table STG to the introduction port IO by airflow. The mist separator MS is the mist separator MS in the first embodiment or the second embodiment. The mist separator MS is provided in the discharge port DN. The mist separator MS is provided such that one end EG1 of the first filter FL1 is located upstream of the other end EG2 of the first filter.

  The resist coating apparatus AP in the present embodiment will be described in detail with reference to FIG.

  A substrate is mounted on the mounting table STG. A resist is applied to the substrate. The resist applied to the substrate may be supplied from a resist nozzle RN as shown in FIG. The resist nozzle RN may be formed on the center of the mounting table STG as shown in FIG. In this case, the resist supplied from the resist nozzle RN is supplied by dropping. The mounting table STG is connected to the rotation mechanism RT. The mounting table STG is rotated in the horizontal direction by the rotation mechanism RT. In the resist coating apparatus according to the present embodiment, the resist dropped from the resist nozzle RN onto the substrate is applied to the entire surface of the substrate by the centrifugal force generated by the rotation of the mounting table STG. According to such a resist coating method, the thickness of the resist coated on the substrate can be made uniform.

  According to the resist coating method described above, excess resist may become resist mist and scatter from the mounting table STG. Such scattered resist mist is guided to the introduction port IO by the air flow generated by the blower BST. The white arrows in FIG. 7 conceptually show the airflow generated by the blower BST. Even if the resist mist scattered is deviated from the induction by the airflow generated by the blower BST, such resist mist adheres to the cup CP. For this reason, the resist mist is not scattered outside the cup CP.

  The airflow including the resist mist guided to the introduction port IO is discharged to the discharge pipe DN. The resist mist contained in the airflow is collected by a mist separator MS. As shown in FIG. 8, the mist separator MS is attached to the bottom BT of the resist coating apparatus AP. FIG. 8 is an enlarged view of the vicinity of the mist separator MS shown in FIG. The mist separator MS is formed in the discharge pipe DN. As shown in FIG. 8, the mist separator MS is provided such that one end EG1 of the first filter FL1 is located upstream of the other end EG2 of the first filter. As shown in FIG. 8, the mist separator MS may be provided in the discharge pipe DN so that the direction from the one end EG1 of the first filter FL1 to the other end EG2 of the first filter FL1 is along the discharge pipe DN. Good. The mist separator MS may be formed such that the direction from the one end EG1 of the first filter FL1 toward the other end EG2 of the first filter FL1 is along the vertical direction. In this case, as shown in FIG. 8, the mist separator MS may be formed such that one end EG1 of the first filter FL1 is higher than the other end EG2 of the second filter FL1. The mist separator MS may be fixed to the bottom portion BT via a ring RG. In this case, an opening through which the discharge pipe DN is exposed is formed in the ring RG. Ring RG may be made of metal (for example, aluminum). In this case, the mist separator MS may be fixed to the bottom portion BT by welding of the ring RG. The diameter of the inner wall of the discharge pipe DN may be constant regardless of the position.

  According to the resist coating apparatus AP in the present embodiment, the surface area of the filter of the mist separator MS is large. For this reason, in the resist coating apparatus AP in the present embodiment, clogging of resist mist in the mist separator MS hardly occurs. If such resist mist clogging occurs, the flow velocity or flow path of the resist mist exhaust airflow may be affected. Such a flow rate of the exhaust air flow or a change in the flow path may affect the thickness of the resist applied on the substrate. In addition, a reduction in the resist mist exhaust amount may result in unnecessary resist adhering to the substrate. On the other hand, in the resist coating apparatus AP in the present embodiment in which clogging of resist mist is unlikely to occur, the above-described problems are unlikely to occur.

  The resist coating apparatus AP in the present embodiment may be used, for example, for forming the wiring layer WI in the semiconductor device SD shown in FIG. FIG. 9 is a cross-sectional view showing the semiconductor device SD in the present embodiment. The semiconductor device SD includes a substrate SUB, a transistor TR provided on the substrate SUB, and a multilayer wiring structure including a plurality of wiring layers WI.

The semiconductor device SD will be described in detail with reference to FIG. The substrate SUB may be a semiconductor substrate (for example, a silicon substrate). An element isolation film STI is formed on the substrate SUB. The element isolation film STI functions to electrically isolate the transistor TR from other elements. The element isolation film STI may be formed of an insulating film (for example, a silicon oxide film). The transistor TR includes a gate insulating film GI, a gate electrode GE, a sidewall SDW, and a diffusion region (source / drain region) DR. The gate insulating film GI is provided on the substrate SUB. The gate insulating film GI is formed of an insulating film. The gate insulating film GI may be formed of a silicon oxide film (SiO ₂ ), a silicon oxynitride film (SiON film), or a high dielectric constant film (for example, a hafnium silicate film (HfSiO) or a nitrogen-added hafnium silicate film). . The gate electrode GE is provided on the gate insulating film GI. The gate electrode GE may be formed of polycrystalline silicon. The gate electrode GE may include a metal film or a silicide film. The sidewall SDW is formed on the side surfaces of the gate insulating film GI and the gate electrode GE. The sidewall SDW may be formed of an insulating film (silicon oxide film or silicon nitride film). The diffusion region DR is formed in the substrate SUB on the side of the gate electrode GE. A silicide layer SC is formed in the diffusion region DR. The silicide layer SC is formed of silicide. The silicide layer SC may be formed of Ni silicide (Ni _1-x Pt _x Si (0 <x <1)) containing Ni silicide, Pt silicide, Co silicide, Ti silicide, or Pt. On the substrate SUB, an etching stopper film ES1 is formed so as to cover the transistor TR. The etching stopper film ES1 is formed of an insulating film. The etching stopper film ES1 may be formed of a silicon nitride film. An interlayer insulating film ID1 is formed on the etching stopper film ES1. The interlayer insulating film ID1 is formed of an insulating film. The interlayer insulating film ID1 may be formed of a silicon oxide film or a low dielectric constant film. A contact plug CP is formed in the interlayer insulating film ID1. The contact plug CP reaches the diffusion region DR through the interlayer insulating film ID1 and the etching stopper film ES1. The contact plug may be made of metal or polycrystalline silicon.

  On the interlayer insulating film ID1, a multilayer wiring layer formed by laminating a plurality of wiring layers WI is formed. The wiring layer WI includes an etching stopper film ES2, an interlayer insulating film ID2 provided on the etching stopper film ES2, and a wiring IC and a via plug VP formed in the interlayer insulating film ID2. The etching stopper film ES2 is formed of an insulating film. The etching stopper film ES1 may be formed of a silicon nitride film. The interlayer insulating film ID1 is formed of an insulating film. The interlayer insulating film ID1 may be formed of a silicon oxide film or a low dielectric constant film. The wiring IC is composed of a metal film ML (not shown in FIG. 9) and a barrier metal film BM (not shown in FIG. 9) that covers the side surfaces thereof. The wiring IC and the via plug VP may have a dual damascene structure or a single damascene structure.

  Next, a method for manufacturing the semiconductor device SD according to the present embodiment will be described in detail. The semiconductor device SD according to the present embodiment is obtained by forming a transistor TR on the substrate SUB and then forming a multilayer wiring structure including a plurality of wiring layers WI on the transistor TR.

  Each wiring layer WI is formed as shown in FIGS. 10 to 12 are cross-sectional views showing a method for manufacturing the semiconductor device SD.

  First, the hard mask HM, the antireflection film AR, and the resist film RS are formed in this order on the interlayer insulating film ID2 formed on the substrate SUB (not shown in FIGS. 10 to 12) (FIG. 10A). )). Next, the resist film RS is exposed to the light LT through the mask MK on which the pattern is formed (FIG. 10B). Next, the exposed resist film RS is developed to form a resist pattern RP (FIG. 11A). Next, a wiring groove IT is formed in the interlayer insulating film ID2 by etching using the resist film RS on which the resist pattern RP is formed as a mask (FIG. 11B). For this etching, dry etching may be used. Next, the resist film RS, the antireflection film AR, and the hard mask HM are removed from the interlayer insulating film ID2. Next, a barrier metal film BM is formed on the bottom and side surfaces of the wiring trench IT and the entire surface of the interlayer insulating film ID2 (FIG. 12A). The barrier metal film BM may be formed of titanium, titanium nitride, tantalum, tantalum nitride, or tungsten nitride. Next, a metal film ML (conductive film) is embedded in the wiring trench IT (FIG. 12B). The metal film ML may be made of copper. The metal film ML may be formed by a plating process. As shown in FIG. 12B, the metal film ML is formed not only on the wiring trench IT but also on the interlayer insulating film ID2 outside the wiring trench IT. Such a metal film ML is removed by, for example, chemical mechanical polishing (CMP). Thereby, a wiring IC embedded in the wiring trench IT is obtained. As described above, each wiring layer WI is obtained.

  The resist coating apparatus AP in the present embodiment may be used in the step of forming the resist film RS shown in FIG. In this case, the substrate SUB is mounted on the mounting table STG of the resist coating apparatus AP. At this time, the substrate SUB may be mounted such that the center of the substrate SUB coincides with the rotation axis of the mounting table STG. The resist film RS may be formed by a process of applying a resist for forming the resist film RS by placing the substrate SUB on the mounting table STG of the resist coating apparatus AP, and a process of heating the substrate SUB. The resist coating device AP is used for forming the semiconductor device SD not only when the above-described resist film RS is formed. The resist coating apparatus AP can be used for any process of forming a resist film on the substrate SUB. As an example, the resist coating apparatus AP can be used when a resist film is formed on the substrate SUB in order to form the diffusion region DR of the semiconductor device SD. In this case, the substrate SUB is mounted on the mounting table STG of the resist coating apparatus AP. As another example, the resist coating apparatus AP can be used when a resist film is formed on the interlayer insulating film ID1 in order to form the contact plug CP of the semiconductor device SD. Also in this case, the substrate SUB is mounted on the mounting table STG of the resist coating apparatus AP.

  When the resist coating apparatus AP is used for manufacturing the semiconductor device SD, the uniformity of the resist film formed in each process is improved. This makes it possible to improve the characteristics of the semiconductor device SD.

  As mentioned above, the invention made by the present inventor has been specifically described based on the embodiment. However, the present invention is not limited to the embodiment, and various modifications can be made without departing from the scope of the invention. Needless to say.

MS mist separator FL1 1st filter FL2 2nd filter FL3 3rd filter FL3a Filter FL3b Filter FL3c Filter HL1 Hole HL2 Through hole HL3a Through hole EG1 One end EG2 Other end SW Side wall OP Opening SP Space SP1 Space SP2 Space AP Resist coating device STG Base RT Rotating mechanism BST Blowing section RN Resist nozzle CP Cup IO Inlet DN DN Exhaust pipe BT Bottom RG Ring SD Semiconductor device SUB Substrate STI Element isolation film TR Transistor DR Diffusion area SC Silicide layer GI Gate insulating film SDW Side wall GE Gate electrode CP Contact plug ES1 Etching stopper film ES2 Etching stopper film ID1 Interlayer insulating film ID2 Interlayer insulating film WI Wiring layer VP Via plug IC Wiring HM Hard mask AR Reflection Prevention film RS Resist film MK Mask LT Optical RP Resist pattern IT Wiring groove BM Barrier metal film ML Metal film

Claims (9)

A cylindrical first filter having an opening at one end;
A second filter formed in a space surrounded by the first filter in a plan view and overlapping the first filter in the height direction of the first filter;
With
A plurality of holes penetrating the side wall of the first filter are formed in the side wall of the first filter,
The area surrounded by the one end of the first filter in plan view is larger than the area surrounded by the other end of the first filter in plan view,
The space is divided into two spaces by the second filter,
The second filter is formed of a sheet-like filter in which a plurality of through holes are formed, and has a convex portion that protrudes from the other end of the first filter toward the one end of the first filter. Mist separator that is formed as follows. The mist separator according to claim 1,
The first filter and the second filter are formed by different members,
The second filter is a mist separator connected to the side wall of the first filter. The mist separator according to claim 1,
The first filter and the second filter are formed by the same member,
The second filter is a mist separator formed continuously from the other end of the first filter. The mist separator according to claim 1,
The area surrounded by the first filter in a plan view is a mist separator that changes in a tapered shape from the one end of the first filter toward the other end of the first filter. The mist separator according to claim 1,
The first filter is formed in a cylindrical shape,
The second filter is a mist separator formed in a conical shape. The mist separator according to claim 1,
The plurality of holes of the first filter are arranged on lattice points,
The plurality of through holes of the second filter are mist separators disposed on lattice points. The mist separator according to claim 1,
A sheet-like third filter in which a plurality of through holes are formed;
The third filter is a mist separator formed in a space on the side where the opening of the first filter is formed in the space, and formed along the height direction of the first filter. A mounting table for applying a resist on the substrate by rotating the substrate;
An introduction port for introducing resist mist generated by the resist in the mounting table is formed, and a discharge pipe for discharging the resist mist through the introduction port;
A blowing section for guiding the resist mist from the mounting table to the introduction port by an air current;
A mist separator provided in the discharge port;
With
The mist separator is
A cylindrical first filter having an opening at one end;
A second filter formed in a space surrounded by the first filter in a plan view and overlapping the first filter in the height direction of the first filter;
With
A plurality of holes penetrating the side wall of the first filter are formed in the side wall of the first filter,
The area surrounded by the one end of the first filter in plan view is larger than the area surrounded by the other end of the first filter in plan view,
The space is divided into two spaces by the second filter,
The second filter is formed by a sheet-like filter in which a plurality of through holes are formed, and is formed so as to protrude from the other end of the first filter toward the one end of the first filter. And
The mist separator is a resist coating apparatus provided such that the one end of the first filter is located upstream of the other end of the first filter. Forming an insulating film on the substrate;
Forming a resist film on the insulating film;
Forming a resist pattern by exposing the resist film through a mask formed with a pattern;
Forming a wiring groove in the insulating film by etching using the resist film on which the resist pattern is formed as a mask;
Embedding a conductive film in the wiring trench;
With
9. The method of manufacturing a semiconductor device, wherein in the step of forming the resist film, the resist film is formed by mounting the substrate on the mounting table of the resist coating apparatus according to claim 8.

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