JP2014029285A - Temperature regulator, temperature adjustment method, manufacturing method of electronic apparatus, and temperature adjustment program - Google Patents

Abstract

PROBLEM TO BE SOLVED: To adjust the temperature of a heat generator within a predetermined range with high accuracy.SOLUTION: A temperature regulator comprises: a housing 209 having an air intake 209a and an exhaust port 209b; a heat sink 210 incorporated in the housing 209; and a heat sink unit 207A including a sprayer 215. A semiconductor package 100 which is a heat generator is thermally connected to the heat sink 210, and a gas phase refrigerant 230 is circulated from the air intake 209a toward the exhaust port 209b of the housing 209. Furthermore, mist of a liquid phase refrigerant 240 is sprayed to the heat sink 210 from the sprayer 215 by a temperature of the semiconductor package 100.

Description

  The present invention relates to a temperature control device, a temperature control method, an electronic device manufacturing method, and a temperature control program.

  Regarding temperature control of an electronic device, for example, a technique is known in which a refrigerant is circulated through a heat exchanger through a cooling plate that cools electronic components on a printed circuit board. In addition, the technology for cooling the semiconductor device on the printed circuit board by air blowing, the technology for spraying and cooling the mist directly on the upper surface of the semiconductor device, and the mist spraying on the thermally conductive plate-like member provided on the upper surface of the semiconductor device Cooling technology is known. Also, a test apparatus such as a burn-in apparatus that employs such a cooling technique is known.

Japanese Utility Model Publication No. 61-114377 JP 2006-46974 A JP 2006-90805 A

  Even if the conventional cooling technology is adopted, when cooling multiple heating elements such as electronic parts and semiconductor devices, or when the heating value of each heating element is different, the temperature of each heating element is kept within the specified range. It was difficult to adjust with high accuracy.

  In the case of a cooling technique in which a liquid refrigerant is sprayed, a liquid refrigerant has to be dried before taking out a heating element such as an electronic component or a semiconductor device from a test apparatus or the like.

  According to one aspect of the present invention, a housing having an air inlet and an exhaust port, a heat radiating member provided inside the housing, and provided outside the housing and thermally connected to the heat radiating member There is provided a temperature control device including a connecting portion, a first supply portion that supplies a gas-phase refrigerant to the intake port, and a second supply portion that supplies a liquid-phase refrigerant to the surface of the heat dissipation member.

  According to another aspect of the present invention, there are provided a temperature adjustment method using a temperature adjustment device, a method for manufacturing an electronic device, and a temperature adjustment program for causing a computer to execute processing of the temperature adjustment device.

  According to the disclosed technology, the temperature of the heating element can be accurately adjusted using a gas phase refrigerant or a liquid phase refrigerant. Further, even when a liquid phase refrigerant is used, the subsequent heating element drying step can be omitted.

It is a figure which shows an example of a semiconductor package. It is a figure which shows an example of the burn-in apparatus which concerns on 1st Embodiment. It is a figure which shows an example of the refrigerant path of the burn-in apparatus which concerns on 1st Embodiment. It is FIG. (1) which shows an example of the heat sink unit which concerns on 1st Embodiment. It is FIG. (2) which shows an example of the heat sink unit which concerns on 1st Embodiment. It is FIG. (3) which shows an example of the heat sink unit which concerns on 1st Embodiment. It is FIG. (1) which shows an example of the temperature control flow of the burn-in apparatus which concerns on 1st Embodiment. It is FIG. (2) which shows an example of the temperature control flow of the burn-in apparatus which concerns on 1st Embodiment. It is FIG. (3) which shows an example of the temperature control flow of the burn-in apparatus which concerns on 1st Embodiment. It is a figure which shows an example of the heat sink unit which concerns on 2nd Embodiment. It is FIG. (1) which shows an example of the heat sink unit which concerns on 3rd Embodiment. It is FIG. (2) which shows an example of the heat sink unit which concerns on 3rd Embodiment. It is a figure which shows the structural example of the hardware of the computer used for a burn-in apparatus.

Hereinafter, an example in which the temperature control device is applied to a burn-in device used for a burn-in test of a semiconductor package will be described in detail with reference to the drawings.
First, the burn-in test will be described.

  In the manufacturing process of a semiconductor package, screening is performed to remove the semiconductor package containing a potential defect. As a screening method, there is a burn-in test in which an electrical stress such as a voltage is applied to the semiconductor package or the semiconductor package is operated under a high temperature condition.

FIG. 1 is a diagram illustrating an example of a semiconductor package.
The semiconductor package 100 includes a semiconductor chip 10 mounted on a package substrate 30 provided with circuit wiring, and a sealing unit 20 that seals the mounted semiconductor chip 10. In the burn-in test, the temperature (junction temperature) Tj at the junction between the semiconductor chip 10 and the sealing portion 20 in the semiconductor package 100 is adjusted within a predetermined range such as 125 ° C. to 150 ° C. for a predetermined time under a predetermined temperature condition. Then, the semiconductor chip 10 is brought into an operating state. As a burn-in apparatus used for the burn-in test, a semiconductor package 100 is mounted on a burn-in board such as a printed circuit board, and power and signals are supplied to the semiconductor package 100 through the burn-in board mounted on the apparatus main body so as to put it in an operating state. It has been. Further, as a burn-in apparatus, a burn-in board on which a plurality of burn-in boards carrying a plurality of semiconductor packages 100 can be mounted is known.

  In the burn-in test, power and signals are supplied to the semiconductor package 100 through the burn-in board, and a current flows therewith, so that the semiconductor chip 10 and the semiconductor package 100 generate heat according to the power consumption of the semiconductor chip 10. In the burn-in test, a voltage higher than that in the normal operation is applied to the semiconductor package 100, and accordingly, the current becomes larger than that in the normal operation. For this reason, variations in power consumption due to manufacturing variations of the semiconductor chip 10 and the like appear remarkably in the difference in heat generation between the semiconductor chip 10 and the semiconductor package 100. If the power consumption of the semiconductor chip 10 varies, it may be difficult to control the junction temperature Tj within a predetermined temperature range.

Here, as a method of obtaining the junction temperature Tj, for example, there is a method of calculating using the following formula (1) or formula (2).
Tj = PW × θja + Ta (1)
Tj = PW × θjc + Tc (2)
In Equation (1), PW is the power consumption of the semiconductor chip 10, θja (= θjc + θca) is the thermal resistance between the semiconductor chip 10 and the surrounding environment of the semiconductor package 100, and Ta is the semiconductor package. 100 ambient temperature (ambient temperature) (FIG. 1). The thermal resistance θja is obtained in advance by experiments, calculations, simulations, etc. before the burn-in test. By detecting the power consumption PW of the semiconductor chip 10 and the ambient temperature Ta of the semiconductor package 100 during the burn-in test, the junction temperature Tj can be calculated from the equation (1).

  In Equation (2), PW is the power consumption of the semiconductor chip 10, θjc is the thermal resistance between the semiconductor chip 10 and the surface of the semiconductor package 100, and Tc is the temperature of the surface of the semiconductor package 100. (Surface temperature) (FIG. 1). The thermal resistance θjc is obtained in advance by experiments, calculations, simulations, etc. before the burn-in test. By detecting the power consumption of the semiconductor chip 10 and the surface temperature Tc of the semiconductor package 100 during the burn-in test, the junction temperature Tj can be calculated by Equation (2).

  The thermal resistance θjc is about 0.15 ° C./W, and the thermal resistance θja is about 0.2 ° C./W even if a heat radiating member such as a heat sink is attached to the semiconductor package 100. For example, it is assumed that a plurality of semiconductor packages 100 including the semiconductor chip 10 having a power consumption of about 400 W are mounted on a burn-in board, mounted on the burn-in apparatus, and the burn-in test is performed with the ambient temperature Ta set to 50 ° C. . Now, assuming that there is a variation of ± 20% in the power consumption 400 W between the semiconductor chips 10 for the plurality of semiconductor packages 100 that perform the burn-in test, the difference in the junction temperature Tj between the semiconductor chips 10 is about 30 ° C. .

  In order to level the junction temperature Tj between the semiconductor chips 10 within the range of 125 ° C. to 150 ° C., it is conceivable to individually adjust the ambient temperature Ta or the surface temperature Tc of each semiconductor package 100. However, for example, in the case of a burn-in apparatus in which a plurality of semiconductor packages 100 are placed in the same temperature environment, such individual temperature adjustment is difficult.

  In addition, there is a device that cools the semiconductor package 100 by boiling evaporation of the coolant by bringing a cooling plate in which the coolant is circulated into contact with the semiconductor package 100 regarding temperature control of the periphery and surface of the semiconductor package 100. However, in such an apparatus, when a plurality of semiconductor packages 100 are cooled by a single cooling plate, the refrigerant flowing in the cooling plate absorbs heat from the plurality of semiconductor packages 100. Therefore, at the refrigerant inlet and outlet of the cooling plate. The refrigerant temperature cannot be kept uniform. Therefore, it is difficult to individually adjust the ambient temperature Ta, the surface temperature Tc, and the junction temperature Tj of each semiconductor chip 10 of each semiconductor package 100.

  If a cooling plate in which such a coolant is circulated is provided in each of the plurality of semiconductor packages 100, the temperature of each semiconductor package 100 and each semiconductor chip 10 can be adjusted. However, it is necessary to provide as many heat exchangers as the number of cooling plates, that is, the number of semiconductor packages 100, for cooling the refrigerant circulating in each cooling plate, which may increase the size of the burn-in apparatus. In addition, the number of semiconductor packages 100 that can be mounted on one burn-in board may be limited. Therefore, there is a possibility that the cost of the burn-in test increases and the manufacturing cost of the semiconductor package 100 including the burn-in test increases.

  Further, regarding temperature control of the semiconductor package 100, there is an apparatus that sprays a mist of coolant directly on the semiconductor package 100 mounted on the burn-in board in a closed space. However, when spraying mist directly on the semiconductor package 100, it is necessary to dry the semiconductor package 100 and the burn-in board on which the semiconductor package 100 is mounted after the burn-in test, and then to remove the burn-in board from the burn-in apparatus. The drying step includes a process in which the temperature is raised to a temperature at which the refrigerant used evaporates, and after drying, the temperature is lowered to a temperature at which the burn-in board can be taken out. The time is approximately 2 to 3 hours. Such a drying process after the burn-in test may increase the entire burn-in test, increase the cost, and increase the manufacturing cost of the semiconductor package 100 including the burn-in test.

  In order to shorten the drying time of such a drying process, it is conceivable to use a low boiling point refrigerant that vaporizes at a lower temperature in advance during the burn-in test. However, when such a low-boiling-point refrigerant is used, the refrigerant sprayed in the form of mist during the burn-in test is liable to vaporize before reaching the semiconductor package 100. Therefore, it may happen that the original action of absorbing heat by the heat of vaporization of the refrigerant adhering to the semiconductor package 100 is not sufficiently obtained.

In view of the above, a burn-in apparatus having the following configuration is used as a burn-in apparatus used for the burn-in test of the semiconductor package 100.
First, the first embodiment will be described.

FIG. 2 is a view showing an example of a burn-in apparatus according to the first embodiment.
The burn-in apparatus 200 shown in FIG. 2 includes a slot area 202 in which a burn-in board 201 on which the semiconductor package 100 is mounted is mounted. A plurality of sockets 203 are mounted on the burn-in board 201. By connecting the semiconductor package 100 to these sockets 203 of the burn-in board 201, the semiconductor package 100 (the package substrate 30 and the semiconductor chip 10) for performing the burn-in test and the burn-in board 201 are electrically connected. The

  Thus, the burn-in board 201 on which the semiconductor package 100 is mounted is inserted into the slot area 202 while being guided by the rails 204 provided in the slot area 202, and the tip portion is attached to the connector 205. The connector 205 is connected to an input portion of an electric signal such as a power source and a signal generator (not shown) provided in a power source and signal generator arrangement area 206. By attaching the tip of the burn-in board 201 to the connector 205, a predetermined power and signal can be supplied to the semiconductor package 100 mounted on the burn-in board 201 so that the semiconductor package 100 can be in a predetermined operation state. It has become.

  In the slot area 202, a plurality of heat sink units 207A functioning as heat radiators are provided. These heat sink units 207A are arranged on the base plate 208 so as to face the upper surfaces of the respective semiconductor packages 100 on the burn-in board 201 attached to the connector 205.

  Each heat sink unit 207A includes a housing 209 and a heat sink 210 provided as a heat radiating member inside the housing 209. A pipe 211 is connected to each casing 209. A radiator 213 and a fan 214 arranged in the lower area 212 of the burn-in device 200 are provided in the path of the pipe 211 so that a gas-phase refrigerant (for example, air) is circulated and circulated through the pipe 211 and the casing 209. It has become. It should be noted that a compressor may be used instead of the fan 214 and a compressed gas phase refrigerant (for example, compressed air) may be supplied to the pipe 211.

  Each heat sink unit 207 </ b> A includes a sprayer 215 such as a nozzle provided in the housing 209. Each sprayer 215 is connected to a pipe 216 including a flow path of a liquid phase refrigerant (for example, a fluorine-based inert liquid or industrial pure water). The liquid refrigerant flow path of the pipe 216 is connected to a tank 217 that is disposed in the lower area 212 and stores the liquid refrigerant. The liquid phase refrigerant is supplied from the tank 217 to the pipe 216 by the pump 217a, and a gas such as compressed air is supplied to the sprayer 215, so that the mist of the liquid phase refrigerant is sprayed from the sprayer 215 onto the heat sink 210 in the housing 209. It has become so.

  During the burn-in test, the heat sink unit 207A including the housing 209, the heat sink 210, and the sprayer 215 is lowered (thick arrow in FIG. 2) by the lifting cylinder 218 that moves the base plate 208 up and down. Thus, the heat sink 210 built in the housing 209 of the heat sink unit 207A is thermally connected to the upper surface of the semiconductor package 100. In order to make it possible to raise and lower the casing 209 containing the heat sink 210 and the sprayer 215 while preventing the refrigerant from leaking from the pipe 211 and the pipe 216, both the pipe 211 and the pipe 216 have an expandable bellows joint 219. Is used.

  Note that the base plate 208 and the heat sink unit 207A disposed on the base plate 208 may be fixed without using the joint 219 having the bellows structure. In this case, a mechanism is adopted in which the burn-in board 201 attached to the connector 205 can be moved up and down, and the burn-in board 201 is raised to thermally connect the semiconductor package 100 to the heat sink 210.

  In the burn-in device 200, a semiconductor mounted on the burn-in board 201 using a gas-phase refrigerant that flows into the housing 209 through the pipe 211 and a liquid-phase refrigerant sprayed from the sprayer 215 into the housing 209 through the pipe 216. The package 100 is cooled. That is, first, heat generated from the semiconductor package 100 during operation is transferred to the heat sink 210 that is thermally connected. The gas-phase refrigerant circulated in the housing 209 through the pipe 211 cools the heat sink 210 in the housing 209. The liquid-phase refrigerant sprayed from the sprayer 215 into the housing 209 through the pipe 216 adheres to the surface of the heat sink 210 in the housing 209 and then cools the heat sink 210 when vaporized.

  The liquid-phase refrigerant sprayed from the sprayer 215 is attached to the surface of the heat sink 210 in the housing 209 and vaporized, then sent to the radiator 213 through the pipe 211 and condensed there. The condensed liquid phase refrigerant is collected in the tank 217 through the pipe 220.

  The burn-in apparatus 200 includes a control unit 221 that controls the entire apparatus. The control unit 221 moves the base plate 208 up and down by the lifting cylinder 218, supplies power to the connector 205 and electric signals such as signals, drives the pump 217 a and the fan 214, and the vapor phase refrigerant or sprayer that flows through the housing 209. The amount of liquid refrigerant sprayed from 215 is controlled. The controller 221 detects the temperature (surface temperature Tc or ambient temperature Ta) of the semiconductor package 100 using a thermocouple, detects the power consumption PW, and calculates the junction temperature Tj. And the control part 221 controls the quantity of the gaseous-phase refrigerant | coolant distribute | circulated to the housing | casing 209 and the quantity of the liquid-phase refrigerant | coolant sprayed from the sprayer 215 based on the calculated junction temperature Tj. Further, depending on the temperature of the semiconductor package 100, the control unit 221 heats the semiconductor package 100 using a heater and raises the temperature. In addition, the control unit 221 has a function of issuing an alarm when the semiconductor package 100 is not adjusted to a predetermined temperature range by controlling the amounts of the gas-phase refrigerant and the liquid-phase refrigerant or by heating with the heater.

  The burn-in device 200 also provides various information (junction temperature Tj adjustment range, thermal resistance θja, θjc, power supply and signal supply conditions, test temperature, test time, etc.) used in the burn-in test of the semiconductor package 100. A storage unit 225 for storing is provided.

The burn-in apparatus 200 having the above configuration will be described in more detail.
FIG. 3 is a diagram illustrating an example of a refrigerant path of the burn-in device according to the first embodiment. Here, for the sake of convenience, regarding the slot area 202, the arrangement of the heat sink unit 207A, the piping 211, and the piping 216 as seen from the base plate 208 side where the lifting cylinder 218 is provided is transparent to the base plate 208. It is shown in the figure.

  In the burn-in apparatus 200, as shown in FIG. 3, a plurality of heat sink units 207 </ b> A are provided for one base plate 208. FIG. 3 illustrates a total of twelve heat sink units 207 </ b> A in which three sets of four heat sink units 207 </ b> A are arranged in parallel. The semiconductor package 100 mounted on the burn-in board 201 via the socket 203 is disposed so as to face the heat sink unit 207A.

  With respect to each group of four heat sink units 207A, each housing 209 is provided with an intake port 209a and an exhaust port 209b connected to a pipe 211 for the gas-phase refrigerant. The gas-phase refrigerant is circulated in the pipe 211 by the fan 214 in the lower area 212 and flows into the housing 209 from the intake port 209a (solid arrow in FIG. 3). And it flows out of the housing | casing 209 from the exhaust port 209b, flows in the piping 211, and is sent to the radiator 213 of the lower area 212 (dashed line arrow of FIG. 3). The gas-phase refrigerant that has passed through the radiator 213 is sent to the housing 209 through the pipe 211 again. In this way, the gas-phase refrigerant is circulated through a path including the housing 209 of each heat sink unit 207A.

  Further, a sprayer 215 connected to the liquid phase refrigerant pipe 216 is provided for each of the four heat sink units 207A in each group. The liquid phase refrigerant stored in the tank 217 is supplied to each sprayer 215 through the pump 217a and the pipe 216 (dotted line arrow in FIG. 3), and gas such as compressed air is supplied. Thereby, the mist of the liquid phase refrigerant is sprayed from each sprayer 215 into each housing 209. For example, the mist of the liquid-phase refrigerant sprayed from the sprayer 215 adheres to the surface of the heat sink 210 thermally connected to the semiconductor package 100 and evaporates by removing heat from the heat sink 210. The evaporated refrigerant flows in the pipe 211 together with the gas-phase refrigerant flowing in the housing 209 and is sent to the radiator 213 (the chain line arrow in FIG. 3), condensed in the radiator 213, passes through the pipe 220, and enters the tank 217. To be recovered. In this way, the liquid refrigerant is circulated through the path including the housing 209 of each heat sink unit 207A.

  In the burn-in device 200, the supply amount (flow rate) of the gas-phase refrigerant circulated from the intake port 209a to the exhaust port 209b of the housing 209 of each heat sink unit 207A can be controlled by the fan 214. In this case, the gas phase refrigerant is supplied to all the casings 209 at a substantially constant flow rate.

  Note that the flow rate of the gas-phase refrigerant can be individually controlled for the housing 209 of each heat sink unit 207A. For example, the flow rate of the gas-phase refrigerant flowing through each housing 209 can be individually controlled by providing a flow rate adjusting valve at the inlet 209a of the housing 209 of each heat sink unit 207A and controlling the opening degree. Such control of the opening degree of the flow regulating valve can be performed by the control unit 221.

  Further, in the burn-in device 200, the supply amount (spray amount, spray speed) of the liquid-phase refrigerant sprayed from the sprayer 215 of each heat sink unit 207A can be controlled. For example, the amount of liquid-phase refrigerant sprayed in each housing 209 is provided by providing a flow rate adjusting valve in each of the liquid-phase refrigerant flow path and the compressed air flow path of each sprayer 215 and controlling the opening degree thereof. And spraying speed can be controlled individually. Such control of the opening degree of the flow regulating valve can be performed by the control unit 221.

  4-6 is a figure which shows an example of the heat sink unit which concerns on 1st Embodiment. 4 is a cross-sectional view taken along the line L1-L1 (circulation direction of the gas-phase refrigerant) in FIG. 3, and FIG. 5 is along the line L2-L2 (direction perpendicular to the circulation direction of the gas-phase refrigerant) in FIG. FIG. 6A is an exploded view of the heat sink unit, and FIG. 6B is an enlarged view of a portion X in FIG. 6A.

  4 and 5 show a state where the heat sink unit 207A is bonded to the upper surface of the semiconductor package 100 connected to the socket 203 of the burn-in board 201. FIG.

  The housing 209 of the heat sink unit 207A includes a flat housing lower portion 209c and a hollow housing upper portion 209d covering the housing lower portion 209c, as shown in FIGS. An intake port 209a and an exhaust port 209b are provided in the housing upper part 209d so as to face each other. For the housing lower part 209c and the housing upper part 209d, for example, a material having thermal conductivity such as iron (Fe) or stainless steel is used. A material such as aluminum (Al) or copper (Cu) can be used for the housing lower portion 209c and the housing upper portion 209d.

  A heat sink 210 is bonded on the lower housing portion 209c via a bonding layer 207a having good thermal conductivity such as a thermal sheet. The heat sink 210 is made of a material having good thermal conductivity such as Al or Cu. The bonding layer 207 a serves not only as a bonding material for bonding the housing lower portion 209 c and the heat sink 210 but also as a buffer material between the housing lower portion 209 c and the heat sink 210. The housing upper part 209d is put on the housing lower part 209c to which the heat sink 210 is joined in this way, and the housing lower part 209c and the housing upper part 209d are joined using a technique such as welding.

A sprayer 215 is attached to the housing upper part 209d before or after joining to the housing lower part 209c.
A bonding layer 207b having a good thermal conductivity such as a thermal sheet is provided on the lower surface of the heat sink unit 207A (the surface of the housing lower portion 209c on the semiconductor package 100 side). The bonding layer 207b serves not only as a bonding material for bonding the semiconductor package 100 and the lower housing portion 209c but also as a buffer material between the semiconductor package 100 and the lower housing portion 209c. For example, a thermocouple 222 and a heater 223 are provided on the lower surface (surface on the semiconductor package 100 side) of the bonding layer 207b. The thermocouple 222 and the heater 223 are electrically connected to a control unit 221 included in the burn-in device 200. The heat sink unit 207A is bonded to the upper surface of the semiconductor package 100 with the bonding layer 207b and a thermocouple 222 and a heater 223 provided on the bonding layer 207b interposed therebetween. Accordingly, the heat sink 210 in the housing 209 of the heat sink unit 207A is thermally connected to the upper surface of the semiconductor package 100 via the bonding layer 207a, the housing lower portion 209c, and the bonding layer 207b.

  The temperature of the semiconductor package 100 is detected using the thermocouple 222 and is heated using the heater 223. Detection of temperature using the thermocouple 222 (detection of the surface temperature Tc or ambient temperature Ta and calculation of the junction temperature Tj) and heating using the heater 223 are controlled by the detection unit 221a and the heating unit 221b of the control unit 221, respectively. Is done.

  The sprayer 215 of the heat sink unit 207 </ b> A is connected to a pipe 216 including a liquid phase refrigerant channel 216 a and a compressed air channel 216 b via a flow rate regulator 224. The flow rate regulator 224 includes a flow rate adjustment valve 224a in a flow path that leads to the liquid phase refrigerant flow path 216a, and a flow rate adjustment valve 224b in a flow path that leads to the compressed air flow path 216b. The opening degree of the flow rate adjustment valve 224a and the opening degree of the flow rate adjustment valve 224b are respectively controlled by the adjustment unit 221c of the control unit 221 included in the burn-in device 200.

  A gas phase refrigerant 230 (thick arrow in FIG. 4) such as air is circulated in the housing 209 of the heat sink unit 207A having such a configuration from the intake port 209a toward the exhaust port 209b. The For example, mist of a liquid phase refrigerant 240 such as a fluorine-based inert liquid or industrial pure water is sprayed from the sprayer 215 to the heat sink 210 in the housing 209 through which the gas-phase refrigerant 230 is circulated in this way. In this case, for example, if the inner dimension of the housing 209 is about 150 mm, the gas-phase refrigerant 230 preferably has a flow rate of about 7 m / s to 10 m / s. By setting the flow rate of the gas-phase refrigerant 230 flowing in the housing 209 within this range, the mist liquid-phase refrigerant 240 sprayed from the sprayer 215 is effectively attached to the surface of the heat sink 210, and the surface of the heat sink 210 Can be vaporized.

  Note that if the flow rate of the gas-phase refrigerant 230 flowing through the housing 209 is too high, the liquid-phase refrigerant 240 sprayed from the sprayer 215 does not adhere to the surface of the heat sink 210 or before it adheres to the surface of the heat sink 210. It can happen to vaporize. Further, if the flow rate of the gas-phase refrigerant 230 flowing through the housing 209 is too slow, the heat-sink 210 may not be sufficiently cooled by the gas-phase refrigerant 230.

  Spraying the mist of the liquid-phase refrigerant 240 sprayed from the sprayer 215 onto the surface of the heat sink 210 with good uniformity can contribute to improvement in cooling efficiency. When the mist of the liquid-phase refrigerant 240 is blown to the heat sink 210 in the housing 209 in which the gas-phase refrigerant 230 flows from the intake port 209a toward the exhaust port 209b, for example, the liquid from the intake port 209a on the windward side The phase refrigerant 240 is sprayed. Thereby, it becomes possible to spray the mist of the liquid-phase refrigerant 240 on the surface of the heat sink 210 with good uniformity, and to improve the cooling efficiency.

  The heat sink 210 provided in the housing 209 of the heat sink unit 207A can have various forms. For example, a heat sink 210 in which a plurality of needle-like members are arranged on the surface of the plate material, and a heat sink 210 in which a plurality of plate-like or corrugated fins are arranged on the surface of the plate material can be used.

Next, the temperature adjustment flow of the burn-in apparatus (temperature adjustment apparatus) will be described.
7-9 is a figure which shows an example of the temperature control flow of the burn-in apparatus which concerns on 1st Embodiment.

  In the burn-in test using the burn-in apparatus 200, first, the semiconductor package 100 is connected to each of the plurality of sockets 203 mounted on the burn-in board 201. A plurality of the burn-in boards 201 on which the plurality of semiconductor packages 100 are mounted are inserted into the slot area 202 of the burn-in apparatus 200 while being guided by the rails 204 and attached to the corresponding connectors 205.

In the following, for convenience, the flow of temperature adjustment will be described by focusing on one of the plurality of semiconductor packages 100 mounted on one burn-in board 201.
The adjustment range of the junction temperature Tj of the semiconductor package 100 is set for the burn-in device 200 to which the burn-in board 201 is mounted as described above (FIG. 7; step S10). The adjustment range of the junction temperature Tj is set in the burn-in device 200 by the user and stored in the storage unit 225. The adjustment range of the junction temperature Tj is set to a range of 125 ° C. to 150 ° C., for example.

  In the burn-in device 200 in which the adjustment range of the junction temperature Tj is set, the flow of the gas-phase refrigerant such as air is started to the housing 209 of each heat sink unit 207A (FIG. 7; step S11). For example, the control unit 221 drives the fan 214 to circulate and circulate the gas-phase refrigerant through the pipe 211 including the inside of the housing 209. As a result, the gas-phase refrigerant hits the heat sink 210 in the housing 209, and preparation for cooling (air cooling) of the heat sink 210 is completed.

  Next, in the burn-in apparatus 200, the control unit 221 moves the base plate 208 by the lifting cylinder 218 (FIG. 7, step S12). Here, the base plate 208 is lowered, and the heat sink unit 207 </ b> A descending together with the base plate 208 is joined to the upper surface of the semiconductor package 100. In the heat sink unit 207 </ b> A, the bonding layer 207 b on the lower surface thereof is bonded to the upper surface of the semiconductor package 100 with the thermocouple 222 and the heater 223 interposed therebetween. By joining in this way, the heat sink 210 of the heat sink unit 207 </ b> A is thermally connected to the upper surface of the semiconductor package 100.

  Next, in the burn-in apparatus 200, the control unit 221 supplies an electrical signal to the connector 205, that is, inputs a predetermined power and signal from the power source of the arrangement area 206 and the signal generator (FIG. 7; step S13). . The power and signals supplied to the connector 205 are transmitted through the burn-in board 201 attached to the connector 205 and the socket 203 mounted thereon, and supplied to the semiconductor package 100 connected to the socket 203. Thereby, the semiconductor package 100 is brought into a predetermined operation state.

  The semiconductor package 100 in the operating state in this way consumes power and generates heat. The heat generated in the semiconductor package 100 is transferred to the heat sink 210 that is thermally connected. In the burn-in apparatus 200, the control unit 221 detects the temperature of the upper surface of the semiconductor package 100 using the thermocouple 222, that is, the surface temperature Tc (FIG. 7; step S14). Further, in the burn-in apparatus 200, the control unit 221 detects the power consumption PW of the semiconductor package 100 in this operating state (FIG. 7; step S15).

  In the burn-in apparatus 200, the thermal resistance θjc between the semiconductor chip 10 and the surface of the semiconductor package 100 obtained in advance, the detected surface temperature Tc, and the power consumption PW are used, and the control unit 221 uses the above formula ( The junction temperature Tj is calculated from 2) (FIG. 7; step S16).

  Here, the case where the junction temperature Tj is calculated using the thermal resistance θjc, the surface temperature Tc, and the power consumption PW is illustrated. In addition, the ambient temperature Ta of the semiconductor package 100 is detected, the power consumption PW at that time, and the thermal resistance θja between the semiconductor chip 10 and the ambient environment of the semiconductor package 100 determined in advance are used to obtain the above formula (1). Alternatively, the junction temperature Tj may be calculated. Alternatively, a diode may be formed on the semiconductor chip 10 of the semiconductor package 100, and the forward voltage of the diode may be detected to calculate the junction temperature Tj.

  After calculating the junction temperature Tj, in the burn-in apparatus 200, the control unit 221 determines whether the calculated junction temperature Tj is equal to or higher than a lower limit value, for example, a minimum value (125 ° C.) of a set adjustment range. Is determined (FIG. 7; step S17).

  When it is determined in step S17 that it is equal to or higher than the lower limit value, in the burn-in device 200, the calculated junction temperature Tj is set to the upper limit value, for example, the maximum value (150 It is determined whether the temperature is equal to or lower than (° C.) (FIG. 7; step S18). The upper limit value may be set to a temperature that is several degrees lower than the maximum value of the set adjustment range. When the temperature is equal to or lower than the upper limit value, the semiconductor package 100 has its junction temperature Tj adjusted to a predetermined range only by the circulation of the gas-phase refrigerant into the housing 209 containing the heat sink 210 of the heat sink unit 207A. become.

  In the burn-in apparatus 200 in which the junction temperature Tj of the semiconductor package 100 is adjusted to a predetermined range, the control unit 221 determines whether or not a predetermined test time of the burn-in test has elapsed (FIG. 7; step S19). . When it is determined that the predetermined test time has not elapsed, the burn-in device 200 performs the processes after step S14. When it is determined that the predetermined test time has elapsed, in the burn-in apparatus 200, the control unit 221 stops the supply of power and signals, and the semiconductor package 100 is brought into a non-operating state. Then, the base plate 208 is raised by the lifting cylinder 218, and the heat sink unit 207 </ b> A is pulled away from the semiconductor package 100. Further, the burn-in board 201 is extracted from the connector 205 and the slot area 202, and the burn-in test is completed.

  On the other hand, when it is determined in step S18 that the calculated junction temperature Tj exceeds the upper limit value, in the burn-in device 200, the control unit 221 causes the liquid phase refrigerant from the sprayer 215 to the heat sink 210 in the housing 209. Is sprayed (FIG. 8; step S20). The supply amount of the liquid-phase refrigerant from the sprayer 215 to the heat sink 210 is controlled by the control unit 221 based on the calculated junction temperature Tj, a difference from the upper limit value, and the like. The control unit 221 controls the opening amounts of the flow rate adjustment valve 224 a and the flow rate adjustment valve 224 b of the flow rate regulator 224 connected to the sprayer 215, and controls the supply amount of the liquid phase refrigerant from the sprayer 215.

  In the housing 209 of the heat sink unit 207A, the vapor phase refrigerant is circulated from the intake port 209a to the exhaust port 209b, and the liquid phase refrigerant is sprayed from the sprayer 215 to the heat sink 210. In the burn-in apparatus 200, in the cooling state as described above, the controller 221 detects the surface temperature Tc (FIG. 8; step S21), the power consumption PW (FIG. 8; step S22), and the junction temperature Tj. Calculation (FIG. 8; step S23) is performed. In the burn-in apparatus 200, the control unit 221 determines whether or not the calculated junction temperature Tj is equal to or lower than the upper limit value (FIG. 8; step S24).

  When it is determined in step S24 that the calculated junction temperature Tj exceeds the upper limit value, in the burn-in device 200, an alarm is issued by the control unit 221 (FIG. 8; step S25). When it is determined that the calculated junction temperature Tj has become equal to or lower than the upper limit value, the burn-in device 200 performs the processing from step 19 (FIG. 7) onward.

  If it is determined in step S17 (FIG. 7) that the calculated junction temperature Tj is lower than the lower limit value, in the burn-in apparatus 200, the control unit 221 heats the semiconductor package 100 with the heater 223. (FIG. 9; step S30). In the burn-in apparatus 200, in such a heating state (and cooling by the gas-phase refrigerant circulation), the controller 221 detects the surface temperature Tc (FIG. 9; step S31) and the power consumption PW (FIG. 9) as described above. Step S32), the junction temperature Tj is calculated (FIG. 9; Step S33). In the burn-in apparatus 200, the control unit 221 determines whether or not the calculated junction temperature Tj is equal to or higher than the lower limit value (FIG. 9; step S34).

  In step S34, when it is determined that the calculated junction temperature Tj is lower than the lower limit value, in the burn-in device 200, an alarm is issued by the control unit 221 (FIG. 9; step S35). When it is determined that the calculated junction temperature Tj is equal to or higher than the lower limit value, the burn-in device 200 performs the processing from step 19 (FIG. 7) onward.

  In the burn-in apparatus 200, the heat sink unit 207A is cooled and the semiconductor package 100 is heated during the burn-in test according to the flow shown in FIGS. 7 to 9, and the junction temperature Tj of the semiconductor package 100 is accurately within a predetermined range. Adjusted. In the burn-in apparatus 200, such adjustment of the junction temperature Tj is performed for each of the plurality of semiconductor packages 100 mounted on each of the plurality of burn-in boards 201. Even when there is a difference in the amount of heat generated between the plurality of semiconductor packages 100 performing the burn-in test, the junction temperature Tj of each semiconductor package 100 is accurately adjusted within a predetermined range, and the burn-in test of the plurality of semiconductor packages 100 is appropriately performed. Can be done.

Next, a second embodiment will be described.
FIG. 10 is a diagram illustrating an example of a heat sink unit according to the second embodiment. 10A is an exploded view of the heat sink unit, and FIG. 10B is an assembly view of the heat sink unit.

  The heat sink unit 207B shown in FIG. 10 has a structure in which a lower portion 210a of the heat sink 210 penetrates the lower case portion 209c and is exposed from the lower surface of the lower case portion 209c. The heat sink 210 is bonded to the lower housing portion 209c via a bonding layer 207a such as a thermal sheet, and the lower housing portion 209c and the upper housing portion 209d are bonded using a technique such as welding in a state in which the heat sink 210 is incorporated. Is done. A sprayer 215 is attached to the housing upper part 209d before or after joining to the housing lower part 209c. A bonding layer 207 b such as a thermal sheet is provided on the lower surface (surface on the semiconductor package 100 side) of the lower part 210 a of the heat sink 210. For example, a thermocouple 222 and a heater 223 are provided on the lower surface (surface on the semiconductor package 100 side) of the bonding layer 207b.

  The burn-in apparatus 200 may be provided with a heat sink unit 207B as shown in FIG. In this case, when the heat sink unit 207B is lowered together with the base plate 208 by the lifting cylinder 218, the heat sink 210 is thermally connected to the upper surface of the semiconductor package 100 via the lower portion 210a and the bonding layer 207b. . The semiconductor package 100 is thermally connected to the heat sink 210 with a lower thermal resistance without passing through the housing lower part 209c.

  Even when such a heat sink unit 207B is used, the same temperature adjustment (FIGS. 7 to 9) as in the case of the heat sink unit 207A described in the first embodiment can be performed. The burn-in test of the plurality of semiconductor packages 100 can be appropriately performed by accurately adjusting the junction temperatures Tj of the plurality of semiconductor packages 100 to be burned-in test within a predetermined range.

Next, a third embodiment will be described.
11 and 12 are diagrams showing an example of a heat sink unit according to the third embodiment. 11 is a cross-sectional view along the flow direction of the gas-phase refrigerant, and FIG. 12 is a cross-sectional view along the direction orthogonal to the flow direction of the gas-phase refrigerant.

  In the heat sink unit 207C shown in FIG. 11 and FIG. 12, the heat sink 210 is provided on the housing lower portion 209c via the bonding layer 207a, and the housing upper portion 209d is joined to the housing lower portion 209c so as to cover the heat sink 210. Have a structure. A bonding layer 207b is provided on the lower surface of the housing lower portion 209c, and a thermocouple 222 connected to the detection unit 221a of the control unit 221 and a heater 223 connected to the heating unit 221b are provided on the bonding layer 207b. Yes.

  The heat sink 210 incorporated in the housing 209 of the heat sink unit 207C has a hollow portion 210b provided therein, and a through hole 210c provided so as to communicate with the surface of the heat sink 210 from the hollow portion 210b. Yes. A pipe 227 provided with a flow rate regulator 226 including a flow rate regulating valve 226a is connected to the hollow portion 210b, and this pipe 227 is connected to a pipe 216 through which a liquid refrigerant flows. The flow rate regulator 226 is controlled by the adjustment unit 221c of the control unit 221. A plurality of through-holes 210c are provided so that the hollow portion 210b communicates with the external space of the heat sink 210.

  11 and 12 illustrate a state where the heat sink unit 207C is bonded to the upper surface of the semiconductor package 100 connected to the socket 203 of the burn-in board 201.

  The burn-in apparatus 200 may be provided with a heat sink unit 207C as shown in FIGS. In the burn-in device 200 using the heat sink unit 207C, the gas-phase refrigerant 230 such as air flowing through the pipe 211 by the fan 214 or the like is circulated from the intake port 209a of the housing 209 toward the exhaust port 209b. Thus, the heat sink 210 is cooled by circulating the gas-phase refrigerant 230.

  In the burn-in device 200 using the heat sink unit 207C, the flow rate of the liquid phase refrigerant 240 such as a fluorine-based inert liquid or industrial pure water flowing through the pipe 216 by the pump 217a is adjusted by the flow rate regulator 226, Into the hollow portion 210b. The liquid-phase refrigerant 240 that has flowed into the cavity 210b is pushed out from the through hole 210c to the surface of the heat sink 210. As a result, liquid droplets of the liquid phase refrigerant 240 are attached to the surface of the heat sink 210. For example, if the through holes 210 c are arranged at an equal pitch, the liquid phase refrigerant can be evenly attached to the surface of the heat sink 210. In this way, the liquid phase refrigerant adhering to the surface of the heat sink 210 is vaporized, whereby the heat sink 210 is cooled.

  According to the heat sink unit 207C, even when the flow rate of the gas-phase refrigerant 230 flowing through the housing 209 from the intake port 209a toward the exhaust port 209b increases, the liquid-phase refrigerant 240 adheres to the surface of the heat sink 210. Can produce. The liquid-phase refrigerant 240 can be attached to the surface of the heat sink 210, and the flow rate of the gas-phase refrigerant 230 can be increased, and the cooling effect by the gas-phase refrigerant 230 and the liquid-phase refrigerant 240 of the heat sink 210 is enhanced. Is possible. Further, according to the heat sink unit 207C, even when the size of the heat sink 210 in the housing 209 is large and the sprayer 215 cannot spray the liquid refrigerant 240 with good overall uniformity, the heat sink 210 has good overall uniformity. Liquid phase refrigerant can be deposited.

  In the heat sink unit 207C, the through-hole 210c is sized so that the liquid-phase refrigerant is pushed out from the cavity 210b with a predetermined pressure, and the pushed-out liquid-phase refrigerant is turned into droplets. For example, a through hole 210c having an inner diameter of 0.3 mm to 0.5 mm can be formed.

The processing function of the control unit 221 of the burn-in apparatus 200 as described above can be realized using a computer.
FIG. 13 is a diagram illustrating a configuration example of computer hardware used in the burn-in apparatus.

  The entire computer 300 used in the burn-in apparatus 200 is controlled by the processor 301. The processor 301 is connected to a RAM (Random Access Memory) 302 and a plurality of peripheral devices via a bus 309. The processor 301 may be a multiprocessor. The processor 301 is, for example, a central processing unit (CPU), a micro processing unit (MPU), a digital signal processor (DSP), an application specific integrated circuit (ASIC), or a programmable logic device (PLD). The processor 301 may be a combination of two or more of CPU, MPU, DSP, ASIC, and PLD.

  The RAM 302 is used as a main storage device of the computer 300. The RAM 302 temporarily stores at least part of an OS (Operating System) program and application programs to be executed by the processor 301. The RAM 302 stores various data necessary for processing by the processor 301.

  Peripheral devices connected to the bus 309 include an HDD (Hard Disk Drive) 303, a graphic processing device 304, an input interface 305, an optical drive device 306, a device connection interface 307, and a network interface 308.

  The HDD 303 is used as an auxiliary storage device for the computer 300. The HDD 303 stores an OS program, application programs, and various data. A semiconductor storage device such as a flash memory can be used as the auxiliary storage device.

  A monitor 311 such as a display device using a CRT (Cathode Ray Tube) or a liquid crystal display device is connected to the graphic processing device 304. The graphic processing device 304 displays an image on the screen of the monitor 311 in accordance with an instruction from the processor 301.

  An input device 312 such as a keyboard, a touch panel, and a mouse is connected to the input interface 305. The input interface 305 transmits a signal transmitted from the input device 312 to the processor 301.

  The optical drive device 306 uses an optical disk such as a DVD (Digital Versatile Disc), a DVD-RAM, a CD-ROM (Compact Disc Read Only Memory), and a CD-R (Recordable) / RW (ReWritable) using a laser beam or the like. The data recorded in 314 is read.

  The device connection interface 307 is a communication interface for connecting peripheral devices to the computer 300. For example, the device connection interface 307 can be connected to a memory device 315 equipped with a communication function with the device connection interface 307 and a memory reader / writer 316 that writes data to or reads data from the memory card 317.

  The network interface 308 is connected to the network 310. The network interface 308 transmits and receives data to and from other computers or communication devices via the network 310.

With the hardware configuration as described above, the processing function of the burn-in apparatus 200 can be realized.
The computer 300 realizes the processing function of the burn-in apparatus 200 by executing a program recorded on a computer-readable recording medium, for example. A program describing the processing contents to be executed by the computer 300 can be recorded in various recording media. For example, a program to be executed by the computer 300 can be stored in the HDD 303. The processor 301 loads at least a part of the program in the HDD 303 into the RAM 302 and executes the program. In addition, a program to be executed by the computer 300 can be recorded on a portable recording medium such as the optical disk 314, the memory device 315, and the memory card 317. The program stored in the portable recording medium becomes executable after being installed in the HDD 303 under the control of the processor 301, for example. The processor 301 can also read and execute a program directly from a portable recording medium.

  In the above description, the burn-in test of the semiconductor package 100 and the burn-in apparatus 200 used for the semiconductor package 100 are taken as an example. However, the burn-in test target includes various electronic devices such as a semiconductor package that generate heat in accordance with the operation. Electronic device of the form. The form of the burn-in board 201 and the socket 203 mounted thereon is selected according to the form of the burn-in test target.

  In the above description, the temperature control device that controls the temperature using the gas phase and the liquid phase refrigerant is applied to the burn-in device. However, the temperature control device can control the temperature in addition to the burn-in test. It is applicable to various tests and manufacturing processes that are performed.

Regarding the embodiment described above, the following additional notes are further disclosed.
(Appendix 1) A housing having an air inlet and an air outlet;
A heat dissipating member provided inside the housing;
A connection portion provided outside the housing and thermally connected to the heat dissipation member;
A first supply unit for supplying a gas-phase refrigerant to the intake port;
And a second supply part for supplying a liquid refrigerant to the surface of the heat radiating member.

(Additional remark 2) The detection part which detects the temperature of the heat generating body which contacts the said heat radiating member,
And a control unit that controls the supply amount of the gas-phase refrigerant by the first supply unit and the supply amount of the liquid-phase refrigerant by the second supply unit based on the temperature detected by the detection unit. The temperature control apparatus according to appendix 1, characterized by:

(Supplementary note 3)
When the temperature detected by the detection unit is higher than a set lower limit value and lower than a set upper limit value, the gas phase refrigerant is supplied by the first supply unit, and the second supply The supply of the liquid-phase refrigerant by the unit,
Supplying the gas-phase refrigerant by the first supply unit and supplying the liquid-phase refrigerant by the second supply unit when the temperature detected by the detection unit is higher than the upper limit value. The temperature control apparatus according to Supplementary Note 2, which is a feature.

(Additional remark 4) The heating part which heats the said heat generating body is further included,
The temperature control apparatus according to appendix 3, wherein the control unit heats the heating element by the heating unit when the temperature detected by the detection unit is lower than the lower limit value.

(Additional remark 5) The said 2nd supply part is equipped with the sprayer which sprays the said liquid phase refrigerant | coolant, The temperature control apparatus in any one of Additional remark 1 thru | or 4 characterized by the above-mentioned.
(Additional remark 6) The said heat radiating member is provided with the cavity provided in the said heat radiating member, and the through-hole which leads to the said surface from the said cavity,
The temperature control according to any one of appendices 1 to 4, wherein the second supply unit supplies the liquid refrigerant to the cavity, and supplies the liquid refrigerant to the surface from the through hole. apparatus.

(Appendix 7) The heating element is an electronic device,
The temperature control device according to any one of appendices 2 to 6, further comprising: a substrate on which the electronic device is mounted; and an input unit that inputs an electrical signal to the electronic device through the substrate.

(Supplementary Note 8) A housing having an air inlet and an exhaust port, a heat radiating member provided inside the housing, a heat radiating member provided outside the housing, thermally connected to the heat radiating member, A radiator including a contact portion, a first supply portion for supplying a gas-phase refrigerant to the intake port, and a second supply portion for supplying a liquid-phase refrigerant to the surface of the heat dissipation member;
A detector for detecting the temperature of the heating element;
A temperature control including: a control unit that controls a supply amount of the gas-phase refrigerant by the first supply unit and a supply amount of the liquid-phase refrigerant by the second supply unit based on the temperature detected by the detection unit; A temperature control method using an apparatus,
Thermally connecting the heating element to the connecting portion of the radiator;
Detecting the temperature by the detection unit;
When the temperature detected by the detection unit is higher than a set lower limit value and lower than a set upper limit value by the control unit, the gas phase refrigerant is supplied by the first supply unit, and And stopping the supply of the liquid refrigerant by the second supply unit;
When the temperature detected by the detection unit by the control unit is higher than the upper limit value, the gas phase refrigerant is supplied by the first supply unit, and the liquid phase refrigerant is supplied by the second supply unit. And a step of supplying the temperature.

(Additional remark 9) The said temperature control apparatus further contains the heating part which heats the said heat generating body,
The temperature control method according to appendix 8, wherein the control unit heats the heating element by the heating unit when the temperature detected by the detection unit is lower than the lower limit value.

(Additional remark 10) The said 2nd supply part is equipped with the sprayer which sprays the said liquid phase refrigerant | coolant, The temperature control method of Additional remark 8 or 9 characterized by the above-mentioned.
(Additional remark 11) The said heat radiating member is provided with the cavity provided in the said heat radiating member, and the through-hole which leads to the said surface from the said cavity,
The temperature adjustment method according to appendix 8 or 9, wherein the second supply unit supplies the liquid refrigerant to the cavity and supplies the liquid refrigerant to the surface from the through hole.

(Supplementary Note 12) The heating element is an electronic device,
The temperature control device further includes a substrate on which the electronic device is mounted, and an input unit that inputs an electrical signal to the electronic device through the substrate,
The temperature adjustment method according to any one of appendices 8 to 11, wherein the detection unit detects the temperature of the electronic device to which the electrical signal is input by the input unit.

(Supplementary note 13) forming an electronic device;
Performing a test on the formed electronic device using a temperature control device, and
The temperature control device is:
A housing having an air inlet and an exhaust port, a heat radiating member provided inside the housing, a connection provided outside the housing, thermally connected to the heat radiating member, and contacting the electronic device A radiator including a first portion, a first supply portion that supplies a gas-phase refrigerant to the air inlet, and a second supply portion that supplies a liquid-phase refrigerant to the surface of the heat dissipation member;
A detector for detecting the temperature of the electronic device;
A control unit that controls the supply amount of the gas-phase refrigerant by the first supply unit and the supply amount of the liquid-phase refrigerant by the second supply unit based on the temperature detected by the detection unit;
The step of performing the test includes
Thermally connecting the electronic device to the connection of the radiator;
Detecting the temperature by the detection unit;
When the temperature detected by the detection unit is higher than a set lower limit value and lower than a set upper limit value by the control unit, the gas phase refrigerant is supplied by the first supply unit, and And stopping the supply of the liquid refrigerant by the second supply unit;
When the temperature detected by the detection unit by the control unit is higher than the upper limit value, the gas phase refrigerant is supplied by the first supply unit, and the liquid phase refrigerant is supplied by the second supply unit. A method for manufacturing an electronic device, comprising:

(Supplementary Note 14) A housing having an air inlet and an exhaust port, a heat radiating member provided inside the housing, a heat radiating member provided outside the housing, thermally connected to the heat radiating member, A radiator including a contact portion, a first supply portion for supplying a gas-phase refrigerant to the intake port, and a second supply portion for supplying a liquid-phase refrigerant to the surface of the heat dissipation member;
A detector for detecting the temperature of the heating element;
A temperature control including: a control unit that controls a supply amount of the gas-phase refrigerant by the first supply unit and a supply amount of the liquid-phase refrigerant by the second supply unit based on the temperature detected by the detection unit; A temperature control program for causing a computer to execute processing of the apparatus,
In the computer,
The detection unit detects the temperature of the heating element thermally connected to the connection part of the radiator,
When the temperature detected by the detection unit is higher than a set lower limit value and lower than a set upper limit value by the control unit, the gas phase refrigerant is supplied by the first supply unit, and , Stopping the supply of the liquid phase refrigerant by the second supply unit,
When the temperature detected by the detection unit by the control unit is higher than the upper limit value, the gas phase refrigerant is supplied by the first supply unit, and the liquid phase refrigerant is supplied by the second supply unit. A temperature control program characterized by causing a process to be supplied to be executed.

DESCRIPTION OF SYMBOLS 10 Semiconductor chip 20 Sealing part 30 Package substrate 100 Semiconductor package 200 Burn-in apparatus 201 Burn-in board 202 Slot area 203 Socket 204 Rail 205 Connector 206 Arrangement area 207A, 207B, 207C Heat sink unit 207a, 207b Bonding layer 208 Base plate 209 Housing 209a Inlet 209b Exhaust 209c Lower casing 209d Upper casing 210 Heat sink 210a Lower 210b Cavity 210c Through hole 211, 216, 220, 227 Piping 212 Lower area 213 Radiator 214 Fan 215 Nebulizer 216a Liquid phase refrigerant flow path 216b Compressed air flow Path 217 Tank 217a Pump 218 Lifting cylinder 219 Joint 221 Control unit 221a Detection unit 221b Heating unit 221c Adjustment unit 222 Thermocouple 223 Heater 224, 226 Flow rate regulators 224a, 224b, 226a Flow rate adjustment valve 225 Storage unit 230 Gas phase refrigerant 240 Liquid phase refrigerant 300 Computer 301 Processor 302 RAM
303 HDD
304 graphic processing device 305 input interface 306 optical drive device 307 device connection interface 308 network interface 309 bus 310 network 311 monitor 312 input device 314 optical disk 315 memory device 316 memory reader / writer 317 memory card

Claims (8)

A housing having an air inlet and an air outlet;
A heat dissipating member provided inside the housing;
A connection portion provided outside the housing and thermally connected to the heat dissipation member;
A first supply unit for supplying a gas-phase refrigerant to the intake port;
And a second supply part for supplying a liquid refrigerant to the surface of the heat radiating member. A detection unit for detecting the temperature of the heating element in contact with the heat dissipation member;
And a control unit that controls the supply amount of the gas-phase refrigerant by the first supply unit and the supply amount of the liquid-phase refrigerant by the second supply unit based on the temperature detected by the detection unit. The temperature control device according to claim 1, wherein: The controller is
When the temperature detected by the detection unit is higher than a set lower limit value and lower than a set upper limit value, the gas phase refrigerant is supplied by the first supply unit, and the second supply The supply of the liquid-phase refrigerant by the unit,
Supplying the gas-phase refrigerant by the first supply unit and supplying the liquid-phase refrigerant by the second supply unit when the temperature detected by the detection unit is higher than the upper limit value. The temperature control apparatus according to claim 2, wherein   The temperature control apparatus according to claim 1, wherein the second supply unit includes a sprayer that sprays the liquid-phase refrigerant. The heat dissipating member includes a cavity provided inside the heat dissipating member, and a through hole that communicates from the cavity to the surface.
4. The temperature according to claim 1, wherein the second supply unit supplies the liquid-phase refrigerant to the hollow portion, and supplies the liquid-phase refrigerant to the surface from the through hole. Adjusting device. A housing having an air inlet and an air outlet, a heat radiating member provided inside the housing, and a connecting portion provided outside the housing and thermally connected to the heat radiating member and in contact with the heating element A radiator including a first supply unit that supplies a gas-phase refrigerant to the intake port, and a second supply unit that supplies a liquid-phase refrigerant to the surface of the heat dissipation member;
A detector for detecting the temperature of the heating element;
A temperature control including: a control unit that controls a supply amount of the gas-phase refrigerant by the first supply unit and a supply amount of the liquid-phase refrigerant by the second supply unit based on the temperature detected by the detection unit; A temperature control method using an apparatus,
Thermally connecting the heating element to the connecting portion of the radiator;
Detecting the temperature by the detection unit;
When the temperature detected by the detection unit is higher than a set lower limit value and lower than a set upper limit value by the control unit, the gas phase refrigerant is supplied by the first supply unit, and And stopping the supply of the liquid refrigerant by the second supply unit;
When the temperature detected by the detection unit by the control unit is higher than the upper limit value, the gas phase refrigerant is supplied by the first supply unit, and the liquid phase refrigerant is supplied by the second supply unit. And a step of supplying the temperature. Forming an electronic device;
Performing a test on the formed electronic device using a temperature control device, and
The temperature control device is:
A housing having an air inlet and an exhaust port, a heat radiating member provided inside the housing, a connection provided outside the housing, thermally connected to the heat radiating member, and contacting the electronic device A radiator including a first portion, a first supply portion that supplies a gas-phase refrigerant to the air inlet, and a second supply portion that supplies a liquid-phase refrigerant to the surface of the heat dissipation member;
A detector for detecting the temperature of the electronic device;
A control unit that controls the supply amount of the gas-phase refrigerant by the first supply unit and the supply amount of the liquid-phase refrigerant by the second supply unit based on the temperature detected by the detection unit;
The step of performing the test includes
Thermally connecting the electronic device to the connection of the radiator;
Detecting the temperature by the detection unit;
When the temperature detected by the detection unit is higher than a set lower limit value and lower than a set upper limit value by the control unit, the gas phase refrigerant is supplied by the first supply unit, and And stopping the supply of the liquid refrigerant by the second supply unit;
When the temperature detected by the detection unit by the control unit is higher than the upper limit value, the gas phase refrigerant is supplied by the first supply unit, and the liquid phase refrigerant is supplied by the second supply unit. A method for manufacturing an electronic device, comprising: A housing having an air inlet and an air outlet, a heat radiating member provided inside the housing, and a connecting portion provided outside the housing and thermally connected to the heat radiating member and in contact with the heating element A radiator including a first supply unit that supplies a gas-phase refrigerant to the intake port, and a second supply unit that supplies a liquid-phase refrigerant to the surface of the heat dissipation member;
A detector for detecting the temperature of the heating element;
A temperature control including: a control unit that controls a supply amount of the gas-phase refrigerant by the first supply unit and a supply amount of the liquid-phase refrigerant by the second supply unit based on the temperature detected by the detection unit; A temperature control program for causing a computer to execute processing of the apparatus,
In the computer,
The detection unit detects the temperature of the heating element thermally connected to the connection part of the radiator,
When the temperature detected by the detection unit is higher than a set lower limit value and lower than a set upper limit value by the control unit, the gas phase refrigerant is supplied by the first supply unit, and , Stopping the supply of the liquid phase refrigerant by the second supply unit,
When the temperature detected by the detection unit by the control unit is higher than the upper limit value, the gas phase refrigerant is supplied by the first supply unit, and the liquid phase refrigerant is supplied by the second supply unit. A temperature control program characterized by causing a process to be supplied to be executed.

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