JP2013514637A - 導体構造要素及び導体構造要素を製造するための方法 - Google Patents
導体構造要素及び導体構造要素を製造するための方法 Download PDFInfo
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- JP2013514637A JP2013514637A JP2012543532A JP2012543532A JP2013514637A JP 2013514637 A JP2013514637 A JP 2013514637A JP 2012543532 A JP2012543532 A JP 2012543532A JP 2012543532 A JP2012543532 A JP 2012543532A JP 2013514637 A JP2013514637 A JP 2013514637A
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- Prior art keywords
- layer
- conductive pattern
- support
- copper
- pattern structure
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- 238000000034 method Methods 0.000 title claims description 49
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 71
- 229910052802 copper Inorganic materials 0.000 claims abstract description 61
- 239000010949 copper Substances 0.000 claims abstract description 61
- 238000000576 coating method Methods 0.000 claims abstract description 36
- 239000011248 coating agent Substances 0.000 claims abstract description 34
- 238000004070 electrodeposition Methods 0.000 claims abstract description 5
- 238000010030 laminating Methods 0.000 claims abstract 2
- 239000010410 layer Substances 0.000 claims description 141
- 239000004020 conductor Substances 0.000 claims description 42
- 238000005530 etching Methods 0.000 claims description 36
- 238000007747 plating Methods 0.000 claims description 21
- 230000008569 process Effects 0.000 claims description 18
- 238000003825 pressing Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 12
- 239000011889 copper foil Substances 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 229910000838 Al alloy Inorganic materials 0.000 claims description 3
- 239000012790 adhesive layer Substances 0.000 claims description 2
- 238000000227 grinding Methods 0.000 claims description 2
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- 239000004065 semiconductor Substances 0.000 claims 2
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- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 239000011888 foil Substances 0.000 description 9
- 229920005989 resin Polymers 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 238000011282 treatment Methods 0.000 description 5
- 238000005452 bending Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000004922 lacquer Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
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- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005553 drilling Methods 0.000 description 3
- 235000011121 sodium hydroxide Nutrition 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
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- 239000010409 thin film Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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Abstract
【選択図】図10
Description
すなわち、硬質な支持体12の裏面上(図示しているように)の該支持体12の銅めっき14をエッチングするためのエッチング工程、続いて、硬質な支持体12の選択的なエッチングを行い、そして最後に多層構造の裏面にある銅コーティング14をたとえばディファレンシャルエッチングで除去し、導電パターン構造16を露出させる。この間に、銅層32の個々のポイント(参照番号38参照)及び銅層14の個々のポイント(図示せず)についても選択的にエッチングすることができる。
生成される構造(“パッケージ”)は、硬質な支持体12を除去した後であっても、さらに処理、たとえばドリル加工(レーザー、機械的、プラズマ)及びそれに続く銅によるめっきの手段で、スルーめっき40を生成する処理、を施すことができる。
Claims (25)
- 導体構造要素を製造するための方法であって、
硬質な支持体(12)を用意する工程と、
前記硬質な支持体(12)上に銅の層(14)を電着によって形成する工程と、
前記銅のコーティング(14)上に導電パターン構造(16)を適用し、次いでおそらくは部品を組み付ける工程と、
前記支持体に少なくとも1つの電気絶縁層(24、28)を積層する工程と、
前記硬質な支持体(12)を取り外す工程と、
前記導電パターン構造(16、14、42)の露出が生じるように、前記硬質な支持体(12)の残りの銅のコーティング(14)を少なくとも部分的に除去する工程と
を含む方法。 - 前記硬質な支持体(12)が、両性金属からなる請求項1に記載の方法。
- 前記硬質な支持体(12)が、アルミニウム(Al)またはアルミニウム合金からなる請求項1または2に記載の方法。
- 前記硬質な支持体(12)の前記銅のコーティング(14)が、約2〜約7μmの間の厚さを有する請求項1〜3のいずれか一項に記載の方法。
- 前記適用される導電パターン構造(16)が、銅からなる請求項1〜4のいずれか一項に記載の方法。
- 前記導電パターン構造(16)が、電着によって形成される請求項1〜5のいずれか一項に記載の方法。
- 前記平坦な銅のコーティング(14)が、該コーティング上にさらなる導電外パターン(42、44)が付着させられるまでは除去されない請求項1〜6のいずれか一項に記載の方法。
- 前記導電パターン構造(16)の下方に(前記導電パターン構造(16)の適用前に)耐エッチング金属層を付着させる工程
を含む請求項1〜7のいずれか一項に記載の方法。 - 前記導電パターン構造(16)上の部品のための接続点(18)に、1つ以上の接点コーティングを形成する工程
を含む請求項1〜8のいずれか一項に記載の方法。 - 前記導電パターン構造(16)上に部品の接続点としての1つ以上の組み付けドーム(18’)を形成する工程
を含む請求項1〜9のいずれか一項に記載の方法。 - 導電パターン構造(16)を適用する工程が、第1のめっきを適用した後に、該第1のめっき上の少なくともいくつかの領域をめっきして、層において異なる銅の層の厚さを達成することを含む請求項1〜11のいずれか一項に記載の方法。
- 前記部品の組み付けに先立って、前記大面積の支持体(製造時の形態)のより小さな形態サイズ(C)(個々のカードサイズ)への分割または個別化が行われる請求項1〜11のいずれか一項に記載の方法。
- 前記組み付けられた部品(20)のうちの少なくとも1つにアンダーフィル(22)を施す工程を含む請求項1〜12のいずれか一項に記載の方法。
- 前記個々のカード(C)をさらなる処理のためにフィッティングフレーム(100)に戻す工程を含む請求項12または13に記載の方法。
- 前記硬質な支持体(12)を取り外す工程に先立って、
当該多層の構造体に少なくとも1つの接着層(24、28)を配置する工程と、
積層体の形成の最終層としての銅箔(F)を押し付け、さらには/あるいはいくつかの導電および絶縁層の連なりからなるPCB半完成品を押し付ける工程と
が用意される請求項1〜14のいずれか一項に記載の方法。 - 組み付けられたチップ(20)の裏面薄化または削除の工程
を含む請求項1〜15のいずれか一項に記載の方法。 - 前記裏面薄化の工程が、チップの縁に有効なチップ層(20.1)の側面を覆う耐エッチング層(54)を適用し、その後に突き出している有効でないチップ層(20.2)を除去することを含む請求項16に記載の方法。
- 前記チップ(20)の裏面薄化が、研削によって機械的に行われ、さらには/あるいは化学的に行われる請求項16または17に記載の方法。
- 前記チップ(20)の有効な層(20.1)が、裏面薄化のプロセスの際にチップの有効な層をエッチングの攻撃から保護する耐エッチング層(21)上に製造されている請求項16〜18のいずれか一項に記載の方法。
- 請求項1〜19のいずれか一項に記載の方法に従って製造された導体構造要素。
- 基本的に同一面の様相で誘電体層(28’)の表面に隣接する導電パターン構造(16)を備える請求項20に記載の導体構造要素。
- 前記導電パターン構造(16)が、もっぱら電着による銅で構成されている請求項21に記載の導体構造要素。
- めっきによる導体(44)が、沈められた前記導電パターン構造(16)から突き出している請求項22に記載の導体構造要素。
- 請求項16〜19のいずれか一項に記載の方法において使用するための半導体素子(20)であって、
有効な層を有する層(20.1)と、有効でない層を有する層(20.2)とを備え、該2つの層(20.1、20.2)の間に耐エッチング材料の層(21)が設けられている半導体素子(20)。 - 可撓基板(60)に金属化された穴(62)によって無はんだの様相で電気的に接続された請求項9に記載の導体構造要素(10)を有する電子アセンブリ。
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CN112739073B (zh) * | 2018-11-20 | 2021-11-02 | 广东依顿电子科技股份有限公司 | 一种盲孔线路板及其制作方法 |
CN111372369B (zh) | 2018-12-25 | 2023-07-07 | 奥特斯科技(重庆)有限公司 | 具有部件屏蔽的部件承载件及其制造方法 |
CN111696928B (zh) * | 2019-03-15 | 2022-10-28 | 富泰华工业(深圳)有限公司 | 半导体封装结构及其制造方法 |
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EP2814306A1 (de) | 2014-12-17 |
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WO2011079918A2 (de) | 2011-07-07 |
DE202010017809U1 (de) | 2012-11-15 |
US20120320549A1 (en) | 2012-12-20 |
EP2415332A2 (de) | 2012-02-08 |
DE102009060480A1 (de) | 2011-06-22 |
WO2011079918A3 (de) | 2011-10-13 |
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