JP2013203584A - 多孔質材料及びその製造方法、並びにハニカム構造体 - Google Patents
多孔質材料及びその製造方法、並びにハニカム構造体 Download PDFInfo
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- JP2013203584A JP2013203584A JP2012073855A JP2012073855A JP2013203584A JP 2013203584 A JP2013203584 A JP 2013203584A JP 2012073855 A JP2012073855 A JP 2012073855A JP 2012073855 A JP2012073855 A JP 2012073855A JP 2013203584 A JP2013203584 A JP 2013203584A
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- porous material
- mass
- binder
- rare earth
- honeycomb structure
- Prior art date
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- 239000011148 porous material Substances 0.000 title claims abstract description 184
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 238000000034 method Methods 0.000 title description 37
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 41
- 239000011777 magnesium Substances 0.000 claims abstract description 20
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims abstract description 20
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 15
- 239000010703 silicon Substances 0.000 claims abstract description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 10
- 239000001301 oxygen Substances 0.000 claims abstract description 10
- 239000011230 binding agent Substances 0.000 claims description 86
- 239000002994 raw material Substances 0.000 claims description 55
- 238000005452 bending Methods 0.000 claims description 30
- 238000010304 firing Methods 0.000 claims description 30
- 239000000843 powder Substances 0.000 claims description 25
- 239000002245 particle Substances 0.000 claims description 22
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 22
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 17
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 15
- 238000005192 partition Methods 0.000 claims description 10
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 9
- 229910052727 yttrium Inorganic materials 0.000 claims description 9
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 229910052684 Cerium Inorganic materials 0.000 claims description 5
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 5
- 229910052779 Neodymium Inorganic materials 0.000 claims description 5
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 5
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052746 lanthanum Inorganic materials 0.000 claims description 5
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 5
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 5
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 4
- 229910052691 Erbium Inorganic materials 0.000 claims description 4
- 229910052693 Europium Inorganic materials 0.000 claims description 4
- 229910052689 Holmium Inorganic materials 0.000 claims description 4
- 229910052765 Lutetium Inorganic materials 0.000 claims description 4
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 4
- 229910052772 Samarium Inorganic materials 0.000 claims description 4
- 229910052771 Terbium Inorganic materials 0.000 claims description 4
- 229910052775 Thulium Inorganic materials 0.000 claims description 4
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 4
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 claims description 4
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims description 4
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims description 4
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 claims description 4
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 claims description 4
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 claims description 4
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims description 4
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 claims description 4
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims description 4
- 239000000463 material Substances 0.000 abstract description 22
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- 238000010438 heat treatment Methods 0.000 description 18
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- 239000000377 silicon dioxide Substances 0.000 description 7
- 238000001354 calcination Methods 0.000 description 6
- 239000003054 catalyst Substances 0.000 description 6
- 239000011812 mixed powder Substances 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 5
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 5
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- 239000011347 resin Substances 0.000 description 5
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
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- FPAFDBFIGPHWGO-UHFFFAOYSA-N dioxosilane;oxomagnesium;hydrate Chemical compound O.[Mg]=O.[Mg]=O.[Mg]=O.O=[Si]=O.O=[Si]=O.O=[Si]=O.O=[Si]=O FPAFDBFIGPHWGO-UHFFFAOYSA-N 0.000 description 3
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- 238000007561 laser diffraction method Methods 0.000 description 3
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- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical group O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
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- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
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- 229920003088 hydroxypropyl methyl cellulose Polymers 0.000 description 2
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- UFVKGYZPFZQRLF-UHFFFAOYSA-N hydroxypropyl methyl cellulose Chemical compound OC1C(O)C(OC)OC(CO)C1OC1C(O)C(O)C(OC2C(C(O)C(OC3C(C(O)C(O)C(CO)O3)O)C(CO)O2)O)C(CO)O1 UFVKGYZPFZQRLF-UHFFFAOYSA-N 0.000 description 2
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- 229910052863 mullite Inorganic materials 0.000 description 2
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- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 239000001768 carboxy methyl cellulose Substances 0.000 description 1
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- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
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- C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
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Abstract
【解決手段】骨材と、骨材間に細孔を形成した状態で骨材同士を結合する非晶質の結合材とを含有し、結合材が希土類元素を含有し、好ましくは、非晶質の結合材が、マグネシウム、アルミニウム、珪素、希土類元素及び酸素を含有し、好ましくは、非晶質の結合材が、MgOを8.0〜15.0質量%含有し、Al2O3を30.0〜60.0質量%含有し、SiO2を30.0〜55.0質量%含有し、希土類酸化物を1.5〜10.0質量%含有する多孔質材料。
【選択図】なし
Description
本発明の多孔質材料の一実施形態は、骨材と、骨材間に細孔を形成した状態で骨材同士を結合する非晶質の結合材とを含有し、結合材が、希土類元素を含有するものである。
本発明のハニカム構造体の一実施形態は、上述した本発明の多孔質材料の一実施形態により構成され、「一方の端面から他方の端面まで延びる複数のセル」を区画形成する隔壁、を備えたものである。上記セルは、流体の流路となるものである。また、ハニカム構造体は、最外周に位置する外周壁を有する構造であることが好ましい。隔壁の厚さは、30〜1000μmが好ましく、50〜500μmが更に好ましく、50〜350μmが特に好ましい。セル密度は、10〜200セル/cm2が好ましく、20〜200セル/cm2が更に好ましく、50〜150セル/cm2が特に好ましい。
本発明の多孔質材料の製造方法の一実施形態について、以下に説明する。
本発明のハニカム構造体の一実施形態の製造方法について説明する。
炭化珪素(SiC)粉末と結合材用原料(粉末)とを、72.8:27.2の比率(質量比率)で混合して「混合粉末」を作製した。結合材用原料としては、水酸化アルミニウムを52.2質量%、タルクを26.5質量%、シリカを19.8質量%、そして、酸化イットリウム(Y2O3)を1.5質量%含有する粉末を用いた。そして、上記「混合粉末」に、バインダとしてヒドロキシプロピルメチルセルロース、造孔材としてデンプン、吸水性樹脂を添加すると共に、水を添加して多孔質材料用原料(成形原料)とした。バインダの含有量は混合粉末を100質量部としたときに、7質量部であった。造孔材の含有量は混合粉末を100質量部としたときに、12質量部であった。水の含有量は混合粉末を100質量部としたときに、70質量部であった。炭化珪素粉末の平均粒子径は20μmであった。また、造孔材の平均粒子径は、デンプン、吸水性樹脂共に、30μmであった。尚、炭化珪素粉末及び造孔材の平均粒子径は、レーザー回折法で測定した値である。
多孔質材料中の各成分の同定は、粉末X線回折による構成相の同定とともに、EPMA(Electron Probe Micro Analyzer)による定性分析及び元素マッピングの結果に基づいて行う。各成分の含有量は、ICP−AES(Inductively Coupled Plasma Atomic Emission Spectrometry:誘導結合プラズマ−発光分光)の方法で定量する。具体的には、珪素(Si)、アルミニウム(Al)、マグネシウム(Mg)、希土類、炭素(C)、及び酸素(O)の各量を測定する。そして、炭素(C)の量から炭化珪素(SiC)の量を算出する。そして、残りの(炭化珪素(SiC)に含まれない)珪素(Si)を二酸化珪素(SiO2)であるとして、当該二酸化珪素(SiO2)量を算出する。そして、アルミニウム(Al)、マグネシウム(Mg)及び希土類が、いずれも酸化物であるとして、それぞれの酸化物の量を算出する。そして、上記SiO2、Al2O3、MgO及び希土類酸化物の全体に対する、「非晶質の結合材」中の各成分(SiO2、Al2O3、MgO及び希土類酸化物)の含有量を算出する。
気孔率は、水銀圧入法(JIS R 1655準拠)による全細孔容積[cm3/g]と水中アルキメデス法による見掛密度[g/cm3]から算出する。気孔率の算出に際しては、「開気孔率(%)=100×全細孔容積/{(1/見掛密度)+全細孔容積}」の式を用いる。尚、本明細書において、「気孔率」というときは、「開気孔率」を意味する。開気孔率は、「多孔質材料の表面に開口する気孔」についての気孔率のことである。
水銀圧入法(JIS R 1655準拠)により測定する。
水銀圧入法(JIS R 1655準拠)により測定する。
ハニカム構造体をセルが貫通する方向を長手方向とした試験片(厚さ0.3mm×横4mm×長さ40mm)に加工し、JIS R1601に準拠した「曲げ試験」により材料の曲げ強度を算出する。
上記「曲げ強度」の試験により得た「応力−ひずみ曲線」から、その「傾き」を算出し、得られた「傾き」をヤング率とする。
JIS R1618に準拠して、40〜800℃の平均線熱膨張係数(熱膨張係数)を測定する。
各条件を表1に示すものとした以外は実施例1と同様にして多孔質材料(ハニカム構造体)を作製した。実施例1の場合と同様にして、各評価を行った。結果を表1に示す。
Claims (13)
- 骨材と、前記骨材間に細孔を形成した状態で前記骨材同士を結合する非晶質の結合材とを含有し、
前記結合材が、希土類元素を含有する多孔質材料。 - 前記非晶質の結合材が、マグネシウム、アルミニウム、珪素、希土類元素及び酸素を含有する請求項1に記載の多孔質材料。
- 前記結合材中の希土類酸化物の含有量が、前記結合材全体に対して、1.5〜10.0質量%である請求項1又は2に記載の多孔質材料。
- 前記結合材が、前記結合材全体に対して、MgOを8.0〜15.0質量%含有し、Al2O3を30.0〜60.0質量%含有し、SiO2を30.0〜55.0質量%含有し、希土類酸化物を1.5〜10.0質量%含有する請求項1〜3のいずれかに記載の多孔質材料。
- 前記希土類元素が、イットリウム、ランタン、セリウム、プラセオジウム、ネオジウム、サマリウム、ユウロピウム、ガドリニウム、テルビウム、ジスプロシウム、ホルミウム、エルビウム、ツリウム、イッテルビウム及びルテチウムからなる群から選択される少なくとも1種である請求項1〜4のいずれかに記載の多孔質材料。
- 前記骨材と前記結合材の合計質量に対する、前記結合材の質量の比率が7〜45質量%である請求項1〜5のいずれかに記載の多孔質材料。
- 前記骨材が、炭化珪素粒子又は窒化珪素粒子である請求項1〜6のいずれかに記載の多孔質材料。
- 気孔率が52〜70%である請求項1〜7のいずれかに記載の多孔質材料。
- 曲げ強度が10MPa以上であり、曲げ強度/ヤング率比が1.7×10−3以上である請求項1〜8のいずれかに記載の多孔質材料。
- 熱膨張係数が4.3×10−6/K以下である請求項1〜9のいずれかに記載の多孔質材料。
- 骨材粉末と、希土類元素を含む結合材用原料とを含有する多孔質材料用原料を、1400〜1480℃で焼成して多孔質材料を作製する多孔質材料の製造方法。
- 請求項1〜10のいずれかに記載の多孔質材料により構成され、
一方の端面から他方の端面まで延びる複数のセルを区画形成する、隔壁を備えたハニカム構造体。 - 前記一方の端面における所定の前記セルの開口部及び前記他方の端面における残余の前記セルの開口部、に配設された目封止部を備える請求項12に記載のハニカム構造体。
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CN108558432A (zh) * | 2018-01-25 | 2018-09-21 | 武汉科技大学 | 一种含植物本征结构的高铝质隔热砖及其制备方法 |
CN108558432B (zh) * | 2018-01-25 | 2021-01-15 | 武汉科技大学 | 一种含植物本征结构的高铝质隔热砖及其制备方法 |
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US20130255213A1 (en) | 2013-10-03 |
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