JP2013125891A5 - - Google Patents
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- JP2013125891A5 JP2013125891A5 JP2011274370A JP2011274370A JP2013125891A5 JP 2013125891 A5 JP2013125891 A5 JP 2013125891A5 JP 2011274370 A JP2011274370 A JP 2011274370A JP 2011274370 A JP2011274370 A JP 2011274370A JP 2013125891 A5 JP2013125891 A5 JP 2013125891A5
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- amorphous
- amorphous silicon
- film
- type amorphous
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- 229910021417 amorphous silicon Inorganic materials 0.000 claims 33
- 239000010408 film Substances 0.000 claims 26
- 239000004065 semiconductor Substances 0.000 claims 17
- 239000000758 substrate Substances 0.000 claims 12
- -1 silicon carbon Chemical compound 0.000 claims 11
- 238000006243 chemical reaction Methods 0.000 claims 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N Silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N Silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 6
- 239000010409 thin film Substances 0.000 claims 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 4
- 229910052732 germanium Inorganic materials 0.000 claims 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 4
- 238000000151 deposition Methods 0.000 claims 2
- 230000003287 optical Effects 0.000 claims 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
Claims (9)
前記半導体基板の一方の表面側に設けられ、前記第1の導電型と反対の第2の導電型を有する第1の非晶質膜と、
前記半導体基板の面内方向において前記第1の非晶質膜に隣接して前記半導体基板の一方の表面側に設けられ、前記第1の導電型を有する第2の非晶質膜と、
前記第1の非晶質膜と前記第2の非晶質膜との間に設けられ、前記第1および第2の非晶質膜の両方よりも大きい光学バンドギャップを有する半導体薄膜とを備える光電変換素子。 A semiconductor substrate made of single crystal silicon having a first conductivity type;
A first amorphous film provided on one surface side of the semiconductor substrate and having a second conductivity type opposite to the first conductivity type;
A second amorphous film having the first conductivity type, provided on one surface side of the semiconductor substrate adjacent to the first amorphous film in an in-plane direction of the semiconductor substrate;
A semiconductor thin film provided between the first amorphous film and the second amorphous film and having an optical band gap larger than both of the first and second amorphous films. Photoelectric conversion element.
前記半導体基板と前記第2の非晶質層との間に設けられ、i型の導電型を有する第4の非晶質膜とを更に備える、請求項1に記載の光電変換素子。 A third amorphous film provided between the semiconductor substrate and the first amorphous layer and having an i-type conductivity;
The photoelectric conversion element according to claim 1, further comprising a fourth amorphous film that is provided between the semiconductor substrate and the second amorphous layer and has an i-type conductivity type.
前記第1の非晶質膜は、p型非晶質膜からなり、
前記第2の非晶質膜は、n型非晶質膜からなる、請求項1から請求項4のいずれか1項に記載の光電変換素子。 The semiconductor substrate is made of n-type single crystal silicon,
The first amorphous film is a p-type amorphous film,
The photoelectric conversion element according to any one of claims 1 to 4 , wherein the second amorphous film is an n-type amorphous film.
前記第2の非晶質膜は、n型アモルファスシリコンカーバイド、n型アモルファスシリコンナイトライド、n型アモルファスシリコンカーボンナイトライド、n型アモルファスシリコンオキサイド、n型アモルファスシリコン、n型アモルファスシリコンゲルマニウムおよびn型アモルファスゲルマニウムのいずれかからなる、請求項5に記載の光電変換素子。 The first amorphous film includes p-type amorphous silicon carbide, p-type amorphous silicon nitride, p-type amorphous silicon carbon nitride, p-type amorphous silicon oxide, p-type amorphous silicon, p-type amorphous silicon germanium, and p-type. Made of either amorphous germanium,
The second amorphous film includes n-type amorphous silicon carbide, n-type amorphous silicon nitride, n-type amorphous silicon carbon nitride, n-type amorphous silicon oxide, n-type amorphous silicon, n-type amorphous silicon germanium, and n-type. The photoelectric conversion element according to claim 5 , comprising any one of amorphous germanium.
前記第1の非晶質膜は、n型非晶質膜からなり、
前記第2の非晶質膜は、p型非晶質膜からなる、請求項1から請求項4のいずれか1項に記載の光電変換素子。 The semiconductor substrate is made of p-type single crystal silicon,
The first amorphous film is an n-type amorphous film,
The photoelectric conversion element according to any one of claims 1 to 4 , wherein the second amorphous film is a p-type amorphous film.
前記第2の非晶質膜は、p型アモルファスシリコンカーバイド、p型アモルファスシリコンナイトライド、p型アモルファスシリコンカーボンナイトライド、p型アモルファスシリコンオキサイド、p型アモルファスシリコン、p型アモルファスシリコンゲルマニウムおよびp型アモルファスゲルマニウムのいずれかからなる、請求項7に記載の光電変換素子。 The first amorphous film includes n-type amorphous silicon carbide, n-type amorphous silicon nitride, n-type amorphous silicon carbon nitride, n-type amorphous silicon oxide, n-type amorphous silicon, n-type amorphous silicon germanium, and n-type. Made of either amorphous germanium,
The second amorphous film includes p-type amorphous silicon carbide, p-type amorphous silicon nitride, p-type amorphous silicon carbon nitride, p-type amorphous silicon oxide, p-type amorphous silicon, p-type amorphous silicon germanium, and p-type. The photoelectric conversion element according to claim 7 , comprising any one of amorphous germanium.
前記半導体基板の面内方向における前記第1の非晶質膜の両端部を覆うように半導体薄膜を形成する第2の工程と、
前記半導体基板の面内方向において前記第1の非晶質膜に隣接して前記半導体薄膜および前記半導体基板の一方の表面上に前記第1の導電型を有する第2の非晶質膜を堆積する第3の工程とを備え、
前記半導体薄膜は、前記第1および第2の非晶質膜の両方よりも大きい光学バンドギャップを有する、光電変換素子の製造方法。 A first step of depositing a first amorphous film having a second conductivity type opposite to the first conductivity type on one surface of a semiconductor substrate made of single crystal silicon having a first conductivity type. When,
A second step of forming a semiconductor thin film so as to cover both end portions of the first amorphous film in the in-plane direction of the semiconductor substrate;
Depositing the semiconductor thin film and the second amorphous film having the first conductivity type on one surface of the semiconductor substrate adjacent to the first amorphous film in the in-plane direction of the semiconductor substrate And a third step to
The method for manufacturing a photoelectric conversion element, wherein the semiconductor thin film has an optical band gap larger than both of the first and second amorphous films.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011274370A JP2013125891A (en) | 2011-12-15 | 2011-12-15 | Photoelectric conversion element and manufacturing method of the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011274370A JP2013125891A (en) | 2011-12-15 | 2011-12-15 | Photoelectric conversion element and manufacturing method of the same |
Publications (2)
Publication Number | Publication Date |
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JP2013125891A JP2013125891A (en) | 2013-06-24 |
JP2013125891A5 true JP2013125891A5 (en) | 2015-01-22 |
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Family Applications (1)
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JP2011274370A Pending JP2013125891A (en) | 2011-12-15 | 2011-12-15 | Photoelectric conversion element and manufacturing method of the same |
Country Status (1)
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JP (1) | JP2013125891A (en) |
Families Citing this family (1)
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WO2016140309A1 (en) * | 2015-03-04 | 2016-09-09 | シャープ株式会社 | Photoelectric conversion element and method for manufacturing same |
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JP2545066B2 (en) * | 1985-11-14 | 1996-10-16 | 鐘淵化学工業株式会社 | Semiconductor device |
FR2880989B1 (en) * | 2005-01-20 | 2007-03-09 | Commissariat Energie Atomique | SEMICONDUCTOR DEVICE WITH HETEROJUNCTIONS AND INTERDIGITAL STRUCTURE |
JP2009152222A (en) * | 2006-10-27 | 2009-07-09 | Kyocera Corp | Manufacturing method of solar cell element |
JP2010021490A (en) * | 2008-07-14 | 2010-01-28 | Kobe Steel Ltd | Semiconductor wiring |
KR101142861B1 (en) * | 2009-02-04 | 2012-05-08 | 엘지전자 주식회사 | Solar cell and manufacturing method of the same |
EP2293351B1 (en) * | 2009-09-07 | 2017-04-12 | Lg Electronics Inc. | Solar cell |
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- 2011-12-15 JP JP2011274370A patent/JP2013125891A/en active Pending
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