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JP2013125891A5 - - Google Patents

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Publication number
JP2013125891A5
JP2013125891A5 JP2011274370A JP2011274370A JP2013125891A5 JP 2013125891 A5 JP2013125891 A5 JP 2013125891A5 JP 2011274370 A JP2011274370 A JP 2011274370A JP 2011274370 A JP2011274370 A JP 2011274370A JP 2013125891 A5 JP2013125891 A5 JP 2013125891A5
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type
amorphous
amorphous silicon
film
type amorphous
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JP2011274370A
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JP2013125891A (en
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Claims (9)

第1の導電型を有する単結晶シリコンからなる半導体基板と、
前記半導体基板の一方の表面側に設けられ、前記第1の導電型と反対の第2の導電型を有する第1の非晶質膜と、
前記半導体基板の面内方向において前記第1の非晶質膜に隣接して前記半導体基板の一方の表面側に設けられ、前記第1の導電型を有する第2の非晶質膜と、
前記第1の非晶質膜と前記第2の非晶質膜との間に設けられ、前記第1および第2の非晶質膜の両方よりも大きい光学バンドギャップを有する半導体薄膜とを備える光電変換素子。
A semiconductor substrate made of single crystal silicon having a first conductivity type;
A first amorphous film provided on one surface side of the semiconductor substrate and having a second conductivity type opposite to the first conductivity type;
A second amorphous film having the first conductivity type, provided on one surface side of the semiconductor substrate adjacent to the first amorphous film in an in-plane direction of the semiconductor substrate;
A semiconductor thin film provided between the first amorphous film and the second amorphous film and having an optical band gap larger than both of the first and second amorphous films. Photoelectric conversion element.
前記半導体基板と前記第1の非晶質層との間に設けられ、i型の導電型を有する第3の非晶質膜と、
前記半導体基板と前記第2の非晶質層との間に設けられ、i型の導電型を有する第4の非晶質膜とを更に備える、請求項1に記載の光電変換素子。
A third amorphous film provided between the semiconductor substrate and the first amorphous layer and having an i-type conductivity;
The photoelectric conversion element according to claim 1, further comprising a fourth amorphous film that is provided between the semiconductor substrate and the second amorphous layer and has an i-type conductivity type.
前記第3および第4の非晶質膜の各々は、i型アモルファスシリコンカーバイド、i型アモルファスシリコンナイトライド、i型アモルファスシリコンカーボンナイトライド、i型アモルファスシリコンオキサイド、i型アモルファスシリコンおよびi型アモルファスシリコンゲルマニウムのいずれかからなる、請求項に記載の光電変換素子。 Each of the third and fourth amorphous films includes i-type amorphous silicon carbide, i-type amorphous silicon nitride, i-type amorphous silicon carbon nitride, i-type amorphous silicon oxide, i-type amorphous silicon, and i-type amorphous. The photoelectric conversion element according to claim 2 , comprising any one of silicon germanium. 前記半導体薄膜は、i型アモルファスシリコンカーバイド、i型アモルファスシリコンナイトライド、i型アモルファスシリコンカーボンナイトライド、およびi型アモルファスシリコンオキサイドのいずれかからなる、請求項1から請求項のいずれか1項に記載の光電変換素子。 The semiconductor thin film, i-type amorphous silicon carbide, i type amorphous silicon nitride, i-type amorphous silicon carbon nitride, and consists of either i-type amorphous silicon oxide, any one of claims 1 to 3 The photoelectric conversion element as described in 2. 前記半導体基板は、n型単結晶シリコンからなり、
前記第1の非晶質膜は、p型非晶質膜からなり、
前記第2の非晶質膜は、n型非晶質膜からなる、請求項1から請求項のいずれか1項に記載の光電変換素子。
The semiconductor substrate is made of n-type single crystal silicon,
The first amorphous film is a p-type amorphous film,
The photoelectric conversion element according to any one of claims 1 to 4 , wherein the second amorphous film is an n-type amorphous film.
前記第1の非晶質膜は、p型アモルファスシリコンカーバイド、p型アモルファスシリコンナイトライド、p型アモルファスシリコンカーボンナイトライド、p型アモルファスシリコンオキサイド、p型アモルファスシリコン、p型アモルファスシリコンゲルマニウムおよびp型アモルファスゲルマニウムのいずれかからなり、
前記第2の非晶質膜は、n型アモルファスシリコンカーバイド、n型アモルファスシリコンナイトライド、n型アモルファスシリコンカーボンナイトライド、n型アモルファスシリコンオキサイド、n型アモルファスシリコン、n型アモルファスシリコンゲルマニウムおよびn型アモルファスゲルマニウムのいずれかからなる、請求項に記載の光電変換素子。
The first amorphous film includes p-type amorphous silicon carbide, p-type amorphous silicon nitride, p-type amorphous silicon carbon nitride, p-type amorphous silicon oxide, p-type amorphous silicon, p-type amorphous silicon germanium, and p-type. Made of either amorphous germanium,
The second amorphous film includes n-type amorphous silicon carbide, n-type amorphous silicon nitride, n-type amorphous silicon carbon nitride, n-type amorphous silicon oxide, n-type amorphous silicon, n-type amorphous silicon germanium, and n-type. The photoelectric conversion element according to claim 5 , comprising any one of amorphous germanium.
前記半導体基板は、p型単結晶シリコンからなり、
前記第1の非晶質膜は、n型非晶質膜からなり、
前記第2の非晶質膜は、p型非晶質膜からなる、請求項1から請求項のいずれか1項に記載の光電変換素子。
The semiconductor substrate is made of p-type single crystal silicon,
The first amorphous film is an n-type amorphous film,
The photoelectric conversion element according to any one of claims 1 to 4 , wherein the second amorphous film is a p-type amorphous film.
前記第1の非晶質膜は、n型アモルファスシリコンカーバイド、n型アモルファスシリコンナイトライド、n型アモルファスシリコンカーボンナイトライド、n型アモルファスシリコンオキサイド、n型アモルファスシリコン、n型アモルファスシリコンゲルマニウムおよびn型アモルファスゲルマニウムのいずれかからなり、
前記第2の非晶質膜は、p型アモルファスシリコンカーバイド、p型アモルファスシリコンナイトライド、p型アモルファスシリコンカーボンナイトライド、p型アモルファスシリコンオキサイド、p型アモルファスシリコン、p型アモルファスシリコンゲルマニウムおよびp型アモルファスゲルマニウムのいずれかからなる、請求項に記載の光電変換素子。
The first amorphous film includes n-type amorphous silicon carbide, n-type amorphous silicon nitride, n-type amorphous silicon carbon nitride, n-type amorphous silicon oxide, n-type amorphous silicon, n-type amorphous silicon germanium, and n-type. Made of either amorphous germanium,
The second amorphous film includes p-type amorphous silicon carbide, p-type amorphous silicon nitride, p-type amorphous silicon carbon nitride, p-type amorphous silicon oxide, p-type amorphous silicon, p-type amorphous silicon germanium, and p-type. The photoelectric conversion element according to claim 7 , comprising any one of amorphous germanium.
第1の導電型を有する単結晶シリコンからなる半導体基板の一方の表面上に前記第1の導電型と反対の第2の導電型を有する第1の非晶質膜を堆積する第1の工程と、
前記半導体基板の面内方向における前記第1の非晶質膜の両端部を覆うように半導体薄膜を形成する第2の工程と、
前記半導体基板の面内方向において前記第1の非晶質膜に隣接して前記半導体薄膜および前記半導体基板の一方の表面上に前記第1の導電型を有する第2の非晶質膜を堆積する第3の工程とを備え、
前記半導体薄膜は、前記第1および第2の非晶質膜の両方よりも大きい光学バンドギャップを有する、光電変換素子の製造方法。
A first step of depositing a first amorphous film having a second conductivity type opposite to the first conductivity type on one surface of a semiconductor substrate made of single crystal silicon having a first conductivity type. When,
A second step of forming a semiconductor thin film so as to cover both end portions of the first amorphous film in the in-plane direction of the semiconductor substrate;
Depositing the semiconductor thin film and the second amorphous film having the first conductivity type on one surface of the semiconductor substrate adjacent to the first amorphous film in the in-plane direction of the semiconductor substrate And a third step to
The method for manufacturing a photoelectric conversion element, wherein the semiconductor thin film has an optical band gap larger than both of the first and second amorphous films.
JP2011274370A 2011-12-15 2011-12-15 Photoelectric conversion element and manufacturing method of the same Pending JP2013125891A (en)

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JP2013125891A5 true JP2013125891A5 (en) 2015-01-22

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