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JP2013012745A - Electronic device - Google Patents

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Publication number
JP2013012745A
JP2013012745A JP2012150112A JP2012150112A JP2013012745A JP 2013012745 A JP2013012745 A JP 2013012745A JP 2012150112 A JP2012150112 A JP 2012150112A JP 2012150112 A JP2012150112 A JP 2012150112A JP 2013012745 A JP2013012745 A JP 2013012745A
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Prior art keywords
electronic device
resin
frame member
light receiving
sealing
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JP2012150112A
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Inventor
Kenji Uchida
建次 内田
Hiroki Hirasawa
宏希 平沢
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Renesas Electronics Corp
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Renesas Electronics Corp
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Priority to JP2012150112A priority Critical patent/JP2013012745A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide an electronic device in which contamination in a functional part of an exposed element is reduced and which has high reliability, and to provide a manufacturing method for the electronic device.SOLUTION: An electronic device 108 comprises: a light-receiving device 101; a frame member 502 composed of first resin erected so as to surround a light-receiving part 101b of the light-receiving device 101; and an encapsulating resin layer 106 composed of second resin filling the periphery of the frame member 502. The light-receiving part 101b of the light-receiving device 101 is exposed, in space surrounded by the frame member 502. An upper surface of the frame member 502 is set higher than an upper surface of the encapsulating resin layer 106.

Description

本発明は、電子装置に関する。   The present invention relates to an electronic device.

近年の技術の発展に伴い、機能素子の一部を露出させた電子装置が実用化されている。これは、光信号を電気信号に変換させる素子においては、電子装置の外部から入力する光信号を直接光素子の受光部に入力するような電子装置において、光信号の減衰を抑制すること、また、黒色樹脂を使用することにより電子装置の耐湿性を向上させ鉛フリー実装時のリフロー条件に適合させること、等の要請があるためである。特に、光信号に青色光を使用する光記録技術において、その光信号を電気信号に変化する受光装置に使用しているエポキシ樹脂が青色光により劣化し光透過特性が悪くなり使用できなくなるという点で、光路上からエポキシ樹脂を排除した前述の機能素子の一部を露出させた電子装置が必要となる。また、このような構造の電子装置は、ＭＥＭＳ（Ｍｉｃｒｏ Ｅｌｅｃｔｒｏ−Ｍｅｃｈａｎｉｃａｌ ｓｙｓｔｅｍｓ）、電機音響フィルター等の機能素子中に可動部があり、この可動部分を樹脂封止出来ない装置や、カメラ用の固体撮像素子にも応用が期待できる。   With the development of technology in recent years, electronic devices in which a part of functional elements are exposed have been put into practical use. This is because, in an element that converts an optical signal into an electrical signal, the attenuation of the optical signal is suppressed in an electronic device in which an optical signal input from the outside of the electronic device is directly input to the light receiving portion of the optical element. This is because there is a demand for improving the moisture resistance of the electronic device by using a black resin and adapting it to the reflow conditions at the time of lead-free mounting. In particular, in optical recording technology that uses blue light as an optical signal, the epoxy resin used in the light receiving device that converts the optical signal into an electrical signal deteriorates due to blue light, and the light transmission characteristics deteriorate, making it unusable. Therefore, an electronic device in which a part of the above-described functional element in which the epoxy resin is removed from the optical path is exposed is required. In addition, the electronic device having such a structure has a movable part in a functional element such as a MEMS (Micro Electro-Mechanical Systems), an electric acoustic filter, etc., and the movable part cannot be sealed with a resin, or a solid for a camera. Applications can also be expected for image sensors.

図１２は、特許文献１に記載された固体撮像装置を示す断面図である。図１２に示すように、固体撮像装置は、固体撮像素子チップ８１と、固体撮像素子チップ８１上に接着剤８５により接着された受光部（図示なし）のみに穴空き部８３を有するエボキシ系樹脂シート８４と、エボキシ系樹脂シート８４上に接着剤８５により接着された平板部となる透明部材８６と、を備えている。固体撮像素子チップ８１は、パッケージ又は基板８１０にダイボンドされ、ボンディングワイヤ８１１を用いて固体撮像素子チップ８１のパッド部８１ａとパッケージ又は基板８１０との所定の接続を行って実装され、気密封止部以外のボンディングワイヤ接続部を含む周辺部を、封止樹脂８１２により樹脂封止されている。また、透明部材８６は、受光部の保護膜として機能している。   FIG. 12 is a cross-sectional view showing the solid-state imaging device described in Patent Document 1. As shown in FIG. 12, the solid-state imaging device includes a solid-state imaging device chip 81 and an epoxy resin having a perforated portion 83 only in a light receiving portion (not shown) bonded to the solid-state imaging device chip 81 with an adhesive 85. A sheet 84 and a transparent member 86 serving as a flat plate bonded to the epoxy resin sheet 84 with an adhesive 85. The solid-state image pickup device chip 81 is die-bonded to a package or substrate 810, and is mounted by making a predetermined connection between the pad portion 81a of the solid-state image pickup device chip 81 and the package or substrate 810 using a bonding wire 811. The peripheral part including the bonding wire connecting part other than the above is sealed with a sealing resin 812. The transparent member 86 functions as a protective film for the light receiving part.

図１３、１４は、特許文献２に記載された固体撮像装置を示す断面図である。図１３に示すように、固体撮像装置は、マイクロレンズ９３を設けた受光エリア９２のみを透明封止部材９４で気密封止した固体撮像素子チップ９１を備えている。固体撮像素子チップ９１は、基板９２１と直接ダイボンドで接着され、固体撮像素子チップ９１の電極と基板９２１との電極間をボンディングワイヤ９２２で接続されたのち、固体撮像素子チップ９１の受光エリア９２のみに設けた透明封止部材９４以外のチップ表面及びボンディングワイヤ９２２による接続部分を、封止樹脂９２３で封止されている。
図１４に示すように、透明封止部材９１１は、平板部９１１ａと枠部９１１ｂとを有し、枠部９１１ｂの上面に平板部９１１ａが形成された構造となっている。透明封止部材９１１は、受光エリア９２を保護し、平板部９１１ａは、保護膜として機能している。図１４に示す透明封止部材９１１は、図１３に示す透明封止部材９４に対応している。 13 and 14 are cross-sectional views showing the solid-state imaging device described in Patent Document 2. FIG. As shown in FIG. 13, the solid-state imaging device includes a solid-state imaging element chip 91 in which only a light receiving area 92 provided with a microlens 93 is hermetically sealed with a transparent sealing member 94. The solid-state image pickup device chip 91 is directly bonded to the substrate 921 by die bonding, and the electrodes of the solid-state image pickup device chip 91 and the electrodes of the substrate 921 are connected by bonding wires 922, and then only the light receiving area 92 of the solid-state image pickup device chip 91 is connected. The surface of the chip other than the transparent sealing member 94 provided on the surface and the connection portion by the bonding wire 922 are sealed with a sealing resin 923.
As shown in FIG. 14, the transparent sealing member 911 has a flat plate portion 911a and a frame portion 911b, and the flat plate portion 911a is formed on the upper surface of the frame portion 911b. The transparent sealing member 911 protects the light receiving area 92, and the flat plate portion 911a functions as a protective film. A transparent sealing member 911 shown in FIG. 14 corresponds to the transparent sealing member 94 shown in FIG.

特開２００１−２５７３３４号公報JP 2001-257334 A 特開平７−２０２１５２号公報JP-A-7-202152

しかしながら、図１２で説明した固体撮像装置では、エボキシ系樹脂シート８４の上面より封止樹脂８１２の上面が高くなっている。そのため、エボキシ系樹脂シート８４上に形成された透明部材８６の側面が封止樹脂８１２に覆われる。これにより、透明部材８６の側面が封止樹脂８１２と接着し、透明部材８６の剥離が困難となる。
図１３、１４で説明した固体撮像装置では、枠部９１１ｂの上面より封止樹脂９２３の上面が高くなっている。図１３に示すように透明封止部材９４の側面が封止樹脂９２３に覆われていることから、平板部９１１ａの側面が封止樹脂９２３に覆われることとなる（不図示）。これにより、平板部９１１ａの側面が封止樹脂９２３と接着し、平板部９１１ａの剥離が困難となる。また、平板部９１１ａの接着面の面積は、枠部９１１ｂの上面の面積によって制限されるため、接着面積を広くして高い接着力を得ることが困難である。 However, in the solid-state imaging device described with reference to FIG. 12, the upper surface of the sealing resin 812 is higher than the upper surface of the epoxy resin sheet 84. Therefore, the side surface of the transparent member 86 formed on the epoxy resin sheet 84 is covered with the sealing resin 812. Thereby, the side surface of the transparent member 86 adheres to the sealing resin 812, and the transparent member 86 becomes difficult to peel off.
In the solid-state imaging device described with reference to FIGS. 13 and 14, the upper surface of the sealing resin 923 is higher than the upper surface of the frame portion 911b. As shown in FIG. 13, since the side surface of the transparent sealing member 94 is covered with the sealing resin 923, the side surface of the flat plate portion 911a is covered with the sealing resin 923 (not shown). Thereby, the side surface of the flat plate portion 911a adheres to the sealing resin 923, and it becomes difficult to peel off the flat plate portion 911a. Further, since the area of the bonding surface of the flat plate portion 911a is limited by the area of the upper surface of the frame portion 911b, it is difficult to increase the bonding area and obtain a high bonding force.

本発明による電子装置は、
素子と、
前記素子の機能部を囲むように立設する第１樹脂からなる枠材と、
前記枠材の周囲を埋める第２樹脂からなる樹脂層と、を備え、
前記枠材に囲まれた空間に前記素子の機能部が露出し、
前記枠材の上面と、前記樹脂層の上面と、が同一平面をなす、または前記枠材の上面が、前記樹脂層の上面より高いことを特徴とする。 An electronic device according to the present invention comprises:
Elements,
A frame material made of a first resin standing up to surround the functional portion of the element;
A resin layer made of a second resin filling the periphery of the frame material,
The functional part of the element is exposed in the space surrounded by the frame material,
The upper surface of the frame member and the upper surface of the resin layer are flush with each other, or the upper surface of the frame member is higher than the upper surface of the resin layer.

この電子装置においては、枠材の上面と、樹脂層の上面と、が同一平面をなすか、または枠材の上面が、樹脂層の上面より高くなっている。すなわち、枠材の上面と、樹脂層の上面とを覆う保護膜の着脱が容易となり、機能部の汚染を低減でき、高い信頼性の電子装置を実現できる。   In this electronic device, the upper surface of the frame member and the upper surface of the resin layer are flush with each other, or the upper surface of the frame member is higher than the upper surface of the resin layer. That is, the protective film covering the upper surface of the frame member and the upper surface of the resin layer can be easily attached and detached, contamination of the functional unit can be reduced, and a highly reliable electronic device can be realized.

本発明による電子装置は、
素子と、
前記素子の機能部を囲むように立設する第１樹脂からなる枠材と、
前記枠材の周囲を埋める第２樹脂からなる樹脂層と、を備え、
前記枠材に囲まれた空間に前記素子の機能部が露出し、
前記枠材の上面が、前記樹脂層の上面より高いことを特徴とする。 An electronic device according to the present invention comprises:
Elements,
A frame material made of a first resin standing up to surround the functional portion of the element;
A resin layer made of a second resin filling the periphery of the frame material,
The functional part of the element is exposed in the space surrounded by the frame material,
The upper surface of the frame material is higher than the upper surface of the resin layer.

この電子装置においては、枠材の上面が、樹脂層の上面より高くなっている。すなわち、枠材の上面と、樹脂層の上面とを覆う保護膜の着脱が容易となり、機能部の汚染を低減でき、高い信頼性の電子装置を実現できる。   In this electronic device, the upper surface of the frame member is higher than the upper surface of the resin layer. That is, the protective film covering the upper surface of the frame member and the upper surface of the resin layer can be easily attached and detached, contamination of the functional unit can be reduced, and a highly reliable electronic device can be realized.

本発明による電子装置の製造方法は、
複数の素子が形成されたウエハ上に、樹脂膜を形成する工程と、
前記樹脂膜をパターニングし、前記素子の機能部を囲むように立設する、第１樹脂からなる枠材を形成する工程と、
前記素子を基材の上に搭載し、前記枠材の上面および前記基材の下面にそれぞれ封止用金型の成型面を圧接し、前記封止用金型の成型面に囲まれた空隙部分のうち、前記枠材に囲まれた空間を除く前記空隙部分に第２樹脂を注入して、前記枠材の周囲を埋める樹脂層を形成する封止工程と、
を含むことを特徴とする。 An electronic device manufacturing method according to the present invention includes:
Forming a resin film on a wafer on which a plurality of elements are formed;
Patterning the resin film, and standing up to surround the functional part of the element, forming a frame material made of a first resin;
The element is mounted on a base material, the molding surface of the sealing mold is pressed against the upper surface of the frame member and the lower surface of the base material, respectively, and the gap surrounded by the molding surface of the sealing mold A sealing step of injecting a second resin into the gap portion excluding the space surrounded by the frame material and forming a resin layer that fills the periphery of the frame material;
It is characterized by including.

この電子装置の製造方法においては、枠材の上面および基材の下面にそれぞれ封止用金型の成型面を圧接し、封止用金型の成型面に囲まれた空隙部分のうち、枠材に囲まれた空間を除く空隙部分に第２樹脂を注入して、枠材の周囲を埋める樹脂層を形成しているため、枠材の上面と、樹脂層の上面と、が同一平面をなすように形成される。これにより、枠材の上面と、樹脂層の上面とがなす平面を覆う保護膜の着脱が容易となり、機能部の汚染を低減できる。これにより、高い信頼性の電子装置を簡便な方法により得ることができる。   In this method for manufacturing an electronic device, the molding surface of the sealing mold is pressed against the upper surface of the frame material and the lower surface of the base material, respectively, and the frame portion is surrounded by the molding surface of the sealing mold. Since the second resin is injected into the gap portion excluding the space surrounded by the material to form a resin layer that fills the periphery of the frame material, the upper surface of the frame material and the upper surface of the resin layer are flush with each other. It is formed to make. Thereby, it becomes easy to attach or detach the protective film that covers the plane formed by the upper surface of the frame member and the upper surface of the resin layer, and contamination of the functional unit can be reduced. Thereby, a highly reliable electronic device can be obtained by a simple method.

本発明によれば、露出した素子の機能部の汚染が低減された、高い信頼性の電子装置およびその製造方法が実現される。   ADVANTAGE OF THE INVENTION According to this invention, the highly reliable electronic device with which the contamination of the functional part of the exposed element was reduced, and its manufacturing method are implement | achieved.

（ａ）第１実施形態における電子装置を示す斜視図、および（ｂ）図１（ａ）中のＩ−Ｉ'で切断した電子装置を示す断面図である。1A is a perspective view showing an electronic device in the first embodiment, and FIG. 1B is a cross-sectional view showing the electronic device cut along II ′ in FIG. 第１実施形態における電子装置の製造工程を示す断面図である。It is sectional drawing which shows the manufacturing process of the electronic device in 1st Embodiment. 第１実施形態における電子装置の製造工程を示す断面図である。It is sectional drawing which shows the manufacturing process of the electronic device in 1st Embodiment. 第１実施形態における電子装置の製造工程を示す断面図である。It is sectional drawing which shows the manufacturing process of the electronic device in 1st Embodiment. 第１実施形態における電子装置の製造工程を示す断面図である。It is sectional drawing which shows the manufacturing process of the electronic device in 1st Embodiment. （ａ）第１実施形態における電子装置を示す斜視図、および（ｂ）図６（ａ）中のＩＩ−ＩＩ'で切断した電子装置を示す断面図である。(A) The perspective view which shows the electronic device in 1st Embodiment, (b) It is sectional drawing which shows the electronic device cut | disconnected by II-II 'in Fig.6 (a). 第２実施形態における電子装置の製造工程を示す断面図である。It is sectional drawing which shows the manufacturing process of the electronic device in 2nd Embodiment. 第３実施形態における電子装置の製造工程を示す断面図である。It is sectional drawing which shows the manufacturing process of the electronic device in 3rd Embodiment. 第４実施形態における電子装置の製造工程を示す断面図である。It is sectional drawing which shows the manufacturing process of the electronic device in 4th Embodiment. （ａ）第５実施形態における電子装置を示す斜視図、および（ｂ）図１０（ａ）中のＩＩＩ−ＩＩＩ'で切断した電子装置を示す断面図である。(A) The perspective view which shows the electronic device in 5th Embodiment, (b) It is sectional drawing which shows the electronic device cut | disconnected by III-III 'in Fig.10 (a). 第６実施形態における電子装置の製造工程を示す断面図である。It is sectional drawing which shows the manufacturing process of the electronic device in 6th Embodiment. 従来の電子装置を示す断面図である。It is sectional drawing which shows the conventional electronic device. 従来の電子装置を示す断面図である。It is sectional drawing which shows the conventional electronic device. 従来の電子装置を示す断面図である。It is sectional drawing which shows the conventional electronic device.

以下、図面を参照しつつ、本発明による電子装置およびその製造方法の好適な実施形態について詳細に説明する。なお、図面の説明においては、同一要素には同一符号を付し、重複する説明を省略する。   Hereinafter, preferred embodiments of an electronic device and a method for manufacturing the same according to the present invention will be described in detail with reference to the drawings. In the description of the drawings, the same reference numerals are assigned to the same elements, and duplicate descriptions are omitted.

（第１実施形態）
図１（ａ）は、第１実施形態における電子装置を示す斜視図、図１（ｂ）は、図１（ａ）中のＩ−Ｉ'で切断した断面図である。
図１（ｂ）に示すように、電子装置１０８は、受光素子１０１と、受光素子１０１の受光部１０１ｂ（機能部）を囲むように立設する第１樹脂からなる枠材１０２と、枠材１０２の周囲を埋める第２樹脂からなる封止樹脂層１０６と、を備えている。図１（ｂ）には図示されていないが、電子装置１０８は、枠材１０２の上面と、封止樹脂層１０６の上面とがなす平面を覆う保護膜をさらに有する。また、受光素子１０１は、金属細線１０５を介してリードフレーム１０４と電気的に接続されている。 (First embodiment)
FIG. 1A is a perspective view illustrating the electronic device according to the first embodiment, and FIG. 1B is a cross-sectional view taken along line II ′ in FIG.
As shown in FIG. 1B, the electronic device 108 includes a light receiving element 101, a frame material 102 made of a first resin standing so as to surround the light receiving part 101 b (functional part) of the light receiving element 101, and a frame material. And a sealing resin layer 106 made of a second resin filling the periphery of 102. Although not illustrated in FIG. 1B, the electronic device 108 further includes a protective film that covers a plane formed by the upper surface of the frame member 102 and the upper surface of the sealing resin layer 106. In addition, the light receiving element 101 is electrically connected to the lead frame 104 through a thin metal wire 105.

枠材１０２の上面と、封止樹脂層１０６の上面と、が同一平面をなしている。すなわち、枠材１０２の上面と、封止樹脂層１０６の上面とが、面一なので、枠材１０２の上面と、封止樹脂層１０６の上面とを覆う保護膜の接着および剥離を容易にできる。   The upper surface of the frame member 102 and the upper surface of the sealing resin layer 106 are on the same plane. That is, since the upper surface of the frame member 102 and the upper surface of the sealing resin layer 106 are flush with each other, the protective film covering the upper surface of the frame member 102 and the upper surface of the sealing resin layer 106 can be easily attached and peeled off. .

受光素子１０１の表面には、機能部として受光部１０１ｂが形成されている。すなわち、受光部１０１ｂは、受光素子１０１の表面に露出している。   On the surface of the light receiving element 101, a light receiving portion 101b is formed as a functional portion. That is, the light receiving portion 101 b is exposed on the surface of the light receiving element 101.

枠材１０２は、受光素子１０１上に形成され、受光部１０１ｂを囲むように立設している。枠材１０２に囲まれた空間に受光素子１０１の受光部１０１ｂが露出している。   The frame member 102 is formed on the light receiving element 101 and is erected so as to surround the light receiving unit 101b. The light receiving portion 101b of the light receiving element 101 is exposed in a space surrounded by the frame material 102.

枠材１０２の高さは、０．０８ｍｍとなっている。枠材１０２の高さとしては、０．０５ｍｍ以上が好ましく、０．１ｍｍ以上がより好ましい。これにより、受光素子１０１の所定の位置からリードフレーム１０４と接続された金属細線１０５が、電子装置１０８の製造過程において用いられる封止用金型１１１ａ、１１１ｂと接触するのを防ぐことができる（図４（ａ）参照）。そのため、封止用金型１１１ａと枠材１０２の上面とを強着でき、封止樹脂層１０６の枠材１０２内側への浸入を抑制できる。また、枠材１０２の高さとは、受光素子１０１の上面から枠材１０２の上面までの垂直方向の長さであって、第１樹脂からなる樹脂膜の厚さをいう。   The height of the frame member 102 is 0.08 mm. The height of the frame member 102 is preferably 0.05 mm or more, and more preferably 0.1 mm or more. Thereby, it is possible to prevent the fine metal wire 105 connected to the lead frame 104 from a predetermined position of the light receiving element 101 from coming into contact with the sealing molds 111a and 111b used in the manufacturing process of the electronic device 108 ( (See FIG. 4 (a)). Therefore, the sealing mold 111a and the upper surface of the frame member 102 can be strongly attached, and the penetration of the sealing resin layer 106 into the frame member 102 can be suppressed. The height of the frame member 102 is the length in the vertical direction from the upper surface of the light receiving element 101 to the upper surface of the frame member 102, and is the thickness of the resin film made of the first resin.

枠材１０２の弾性率は、２０℃で１ＧＰａ以上６ＧＰａ以下、かつ２００℃で１０ＭＰａ以上３ＧＰａ以下が好ましい。２０℃で１ＧＰａ以上６ＧＰａ以下とすることにより、電子装置１０８の受光部１０１ｂを保護する枠材１０２として機能できる。また、２００℃で１０ＭＰａ以上３ＧＰａ以下とすることにより、電子装置１０８の製造過程における封止用金型１１１ａ、１１１ｂによる圧接時に、枠材１０２がわずかに弾性変形して緩衝材として機能するため、受光部１０１ｂを外圧から保護できる。また、枠材１０２の弾性率とは、第１樹脂を光および熱により完全に硬化した状態の弾性率をいう。   The elastic modulus of the frame member 102 is preferably 1 GPa to 6 GPa at 20 ° C. and 10 MPa to 3 GPa at 200 ° C. By setting it to 1 GPa or more and 6 GPa or less at 20 ° C., it can function as the frame member 102 that protects the light receiving portion 101 b of the electronic device 108. In addition, by setting the pressure at 10 ° C. to 3 GPa at 200 ° C., the frame material 102 slightly elastically deforms and functions as a buffer material when pressed by the sealing molds 111a and 111b in the manufacturing process of the electronic device 108. The light receiving unit 101b can be protected from external pressure. Further, the elastic modulus of the frame member 102 means an elastic modulus in a state where the first resin is completely cured by light and heat.

枠材１０２は、第１樹脂から形成されている。第１樹脂は、光および熱により硬化可能な樹脂を硬化させたものである。光および熱により硬化可能な樹脂とは、アクリル系樹脂などの光反応性樹脂と、エポキシ樹脂などの熱硬化性樹脂とを含む樹脂である。   The frame member 102 is made of a first resin. The first resin is obtained by curing a resin that can be cured by light and heat. The resin curable by light and heat is a resin including a photoreactive resin such as an acrylic resin and a thermosetting resin such as an epoxy resin.

封止樹脂層１０６は、第２樹脂から形成されている。第２樹脂は、電子装置１０８の封止に用いられる封止樹脂である。枠材１０２の上面と封止樹脂層１０６の上面とは、全体で平坦な面を形成している。   The sealing resin layer 106 is formed from the second resin. The second resin is a sealing resin used for sealing the electronic device 108. The upper surface of the frame member 102 and the upper surface of the sealing resin layer 106 form a flat surface as a whole.

図２乃至図６を参照しつつ、第１実施形態における電子装置の製造方法について説明する。図２乃至図５は、第１実施形態における電子装置の製造工程を示す断面図である。図６（ａ）は、第１実施形態における電子装置を示す斜視図、図６（ｂ）は、図６（ａ）中のＩＩ−ＩＩ'で切断した断面図である。   With reference to FIGS. 2 to 6, a method of manufacturing the electronic device in the first embodiment will be described. 2 to 5 are cross-sectional views illustrating the manufacturing steps of the electronic device according to the first embodiment. FIG. 6A is a perspective view showing the electronic device according to the first embodiment, and FIG. 6B is a cross-sectional view taken along II-II ′ in FIG.

まず、図２（ａ）に示すように、ウエハ１０１ａを準備する。このウエハ１０１ａは複数の受光素子１０１が形成され、夫々の受光素子１０１の表面には受光部１０１ｂが露出している。なお図２（ａ）では、ウエハ１０１ａに配置された受光素子１０１のうち、２つのみを示しており、２つの受光部１０１ｂが露出している。   First, as shown in FIG. 2A, a wafer 101a is prepared. A plurality of light receiving elements 101 are formed on the wafer 101a, and a light receiving portion 101b is exposed on the surface of each light receiving element 101. In FIG. 2A, only two of the light receiving elements 101 arranged on the wafer 101a are shown, and the two light receiving portions 101b are exposed.

次に、図２（ｂ）に示すように、ウエハ１０１ａ上に、樹脂膜１０２ａ（第１樹脂）を形成する。ここでは、樹脂膜１０２ａは、均一な厚みを持つフィルムである。このフィルム状の樹脂膜１０２ａを用いる理由は、ウエハ全体に均一なかつ０．０５ｍｍ以上の膜厚の樹脂膜を形成するためである。すなわち、樹脂膜１０２ａとして液状の樹脂を用いた場合、ウエハ全体に均一な膜厚とするためには低粘度樹脂を用いることになり、その低粘度のために０．０５ｍｍの膜厚みを得ることが困難である。一方、液状の樹脂を用いてウエハ全体に０．０５ｍｍ以上の膜厚みを形成しようとすると、高粘度樹脂を用いることとなり、その高粘度のためにウエハ上への塗布時に粘性抵抗が高く、高さのバラツキが大きくなり、均一な膜厚を得ることが困難である。すなわち、フィルム状の樹脂膜１０２ａを用いることによって、０．０５ｍｍ以上の均一な膜厚の樹脂膜１０２ａが実現できる。本実施形態において、樹脂膜１０２ａによりウエハ１０１ａ全体を被覆する。樹脂膜１０２ａの厚さは、０．０８ｍｍである。これにより、高さが０．０８ｍｍの枠材１０２が得られる。   Next, as shown in FIG. 2B, a resin film 102a (first resin) is formed on the wafer 101a. Here, the resin film 102a is a film having a uniform thickness. The reason for using the film-like resin film 102a is to form a uniform resin film having a thickness of 0.05 mm or more over the entire wafer. That is, when a liquid resin is used as the resin film 102a, a low-viscosity resin is used to obtain a uniform film thickness over the entire wafer, and a film thickness of 0.05 mm is obtained due to the low viscosity. Is difficult. On the other hand, if an attempt is made to form a film thickness of 0.05 mm or more on the entire wafer using a liquid resin, a high-viscosity resin will be used. The variation in thickness becomes large, and it is difficult to obtain a uniform film thickness. That is, by using the film-like resin film 102a, a resin film 102a having a uniform film thickness of 0.05 mm or more can be realized. In the present embodiment, the entire wafer 101a is covered with the resin film 102a. The thickness of the resin film 102a is 0.08 mm. Thereby, the frame material 102 whose height is 0.08 mm is obtained.

続いて、図２（ｃ）に示すように、受光部１０１ｂが露光用マスク１０３の上面に形成された筒状部の内径に収まるように位置合せをして、露光を行い、枠材１０２を形成するように樹脂膜１０２ａをパターニングする。   Subsequently, as shown in FIG. 2C, alignment is performed so that the light receiving portion 101b fits within the inner diameter of the cylindrical portion formed on the upper surface of the exposure mask 103, exposure is performed, and the frame member 102 is removed. The resin film 102a is patterned so as to be formed.

さらに、図２（ｄ）に示すように、現像処理を行い、枠材１０２以外の樹脂膜１０２ａを除去し、受光部１０１ｂをそれぞれ囲むように立設した枠材１０２が形成される。
このように、枠材１０２は、フォトリソグラフィ工法を用いて形成することができる。このため、受光部１０１ｂに対する封止樹脂層１０６の接触を完全に排除し、封止樹脂層１０６が枠材１０２の内部に残留するのを防止できる。
なお、この現像処理後の時点では、枠材１０２は完全に硬化していないため、枠材１０２とウエハ１０１ａ、すなわち枠材１０２と受光素子１０１とは、弱い接合力で接着しているが、強固に接着はしていない。 Further, as shown in FIG. 2D, development processing is performed, the resin film 102a other than the frame material 102 is removed, and the frame material 102 erected so as to surround the light receiving portion 101b is formed.
Thus, the frame member 102 can be formed using a photolithography method. For this reason, the contact of the sealing resin layer 106 with the light receiving portion 101 b can be completely eliminated, and the sealing resin layer 106 can be prevented from remaining inside the frame member 102.
Since the frame member 102 is not completely cured at the time after the development processing, the frame member 102 and the wafer 101a, that is, the frame member 102 and the light receiving element 101 are bonded with a weak bonding force. It is not firmly bonded.

つづいて、枠材１０２が形成されたウエハ１０１ａを熱処理し、枠材１０２を完全硬化させ、枠材１０２とウエハ１０１ａ、すなわち枠材１０２と受光素子１０１の間を強固に接着させる。この熱処理による枠材１０２の形状的な変化は無いため、枠材１０２の形状は図２（ｄ）に示された枠材１０２の形状と同様である。   Subsequently, the wafer 101a on which the frame member 102 is formed is heat-treated to completely cure the frame member 102, and the frame member 102 and the wafer 101a, that is, the frame member 102 and the light receiving element 101 are firmly bonded. Since there is no change in the shape of the frame member 102 due to this heat treatment, the shape of the frame member 102 is the same as the shape of the frame member 102 shown in FIG.

次いで、図３（ａ）に示すように、ウエハ１０１ａから個々の受光素子１０１を切り出して、枠材１０２を有する受光素子１０１を得る。
図６（ａ）に示すように、枠材１０２は、内側に空洞部を有する円筒状に形成されている。ここで、枠材１０２の形状は円筒状だけでなく、受光部１０１ｂの形状によりその周囲に枠を形成するよう楕円、あるいは四角形などの筒状に形成することもできる。また、図６（ｂ）に示すように、受光部１０１ｂの上方は枠材１０２の内側の空洞部となっているため、受光部１０１ｂは受光素子１０１の表面に露出している。
ここで、枠材１０２の弾性率は、常温で約２．４ＧＰａ、２００℃で約１５ＭＰａに調整されている。枠材１０２の弾性率は、光および熱で硬化可能な樹脂の種類や硬化剤など含有物の組成比の変更、または硬化光量や硬化温度などの製造条件を適宜設定すること等により、適宜調整できる。 Next, as shown in FIG. 3A, individual light receiving elements 101 are cut out from the wafer 101 a to obtain the light receiving elements 101 having the frame material 102.
As shown in FIG. 6A, the frame member 102 is formed in a cylindrical shape having a hollow portion inside. Here, the shape of the frame member 102 is not limited to a cylindrical shape, but may be formed in a cylindrical shape such as an ellipse or a quadrangle so as to form a frame around the light receiving portion 101b. Further, as shown in FIG. 6B, the light receiving portion 101 b is exposed on the surface of the light receiving element 101 because the upper portion of the light receiving portion 101 b is a hollow portion inside the frame member 102.
Here, the elastic modulus of the frame member 102 is adjusted to about 2.4 GPa at room temperature and about 15 MPa at 200 ° C. The elastic modulus of the frame member 102 is appropriately adjusted by changing the composition ratio of the content such as the type of resin curable with light and heat and the curing agent, or appropriately setting the production conditions such as the amount of curing light and the curing temperature. it can.

次いで、図３（ｂ）に示すように、受光素子１０１をリードフレーム１０４上の所定の位置に接着剤を介して接着させる。続いて、図３（ｃ）に示すように、受光素子１０１とリードフレーム１０４のそれぞれの所定の位置を、金属細線１０５を介して、電気的に接続させる。   Next, as shown in FIG. 3B, the light receiving element 101 is adhered to a predetermined position on the lead frame 104 with an adhesive. Subsequently, as shown in FIG. 3C, the respective predetermined positions of the light receiving element 101 and the lead frame 104 are electrically connected through the fine metal wire 105.

次いで、図４（ａ）に示すように、平坦な面を成型面とする封止用金型１１１ａ，１１１ｂを用意し、図４（ｂ）に示されたリードフレーム１０４上の受光素子１０１を、封止用金型１１１ａ，１１１ｂの所定の位置に固定する。続いて、枠材１０２の上面に封止用金型１１１ａの成型面を、リードフレーム１０４の下面に封止用金型１１１ｂの成型面を、それぞれ圧接する。すなわち、枠材１０２の上面と封止用金型１１１ａの成型面とのすき間、およびリードフレーム１０４の下面と封止用金型１１１ｂの成型面とのすき間を最小限におさえ、両者をそれぞれ密着する。   Next, as shown in FIG. 4A, sealing molds 111a and 111b having a flat surface as a molding surface are prepared, and the light receiving element 101 on the lead frame 104 shown in FIG. Then, the sealing molds 111a and 111b are fixed at predetermined positions. Subsequently, the molding surface of the sealing mold 111 a is pressed against the upper surface of the frame member 102, and the molding surface of the sealing mold 111 b is pressed against the lower surface of the lead frame 104. That is, the gap between the upper surface of the frame member 102 and the molding surface of the sealing mold 111a and the gap between the lower surface of the lead frame 104 and the molding surface of the sealing mold 111b are minimized, and the two are in close contact with each other. To do.

次いで、図４（ａ）に示すように、圧接された状態のまま、熱によって溶融した封止樹脂（第２樹脂）を、封止用金型１１１ａ，１１１ｂのそれぞれの成型面に囲まれた空隙部分のうち、枠材１０２に囲まれた空間を除く空隙部分に注入し、枠材１０２の周囲を埋める封止樹脂層１０６を形成する。この時、受光部１０１ｂの上方には、枠材１０２と封止用金型１１１ａとで囲まれた閉空間が形成されている。さらに、封止用金型１１１ａの成型面と枠材１０２の上面と間は挟圧による外力で強固に密着され、かつ受光素子１０１と枠材１０２の間は前述の通り強く接着されている。このとき、枠材１０２は２０℃で１ＧＰａ以上６ＧＰａ以下、かつ２００℃で１０ＭＰａ以上３ＧＰａ以下の弾性率であれば、封止用金型による挟圧により枠材１０２自身が弾性変形し、この挟圧による外力を吸収して受光素子１０１を保護することが出来る。さらに、この弾性変形は枠材１０２を封止用金型１１１ａに密着させる反力を生むことが出来る。よって、封止樹脂は、枠材１０２の内側、すなわち受光部１０１ｂの上方に形成された閉空間に流れ込めない。上述した枠材１０２の弾性変形による封止用金型１１１ａの密着力を増すために、枠材１０２の上面の高さが封止樹脂層１０６上面の高さから０ｍｍ以上０．０５ｍｍ以下間で設計してもよい。ここで、枠材１０２の上面が封止樹脂層１０６の上面より０．０５ｍｍより高い設計では、封止用金型１１１ａの挟圧による外力が強まり、枠材１０２の変形が塑性変形に至り、破断する事がある。一方、枠材１０２の上面が封止樹脂層１０６の上面より低い場合、すなわち枠材１０２の上面の高さ封止樹脂層１０６の上面の高さ未満（０ｍｍ未満）であれば、封止樹脂が枠材１０２の内部に流入することは自明である。   Next, as shown in FIG. 4A, the sealing resin (second resin) melted by heat was surrounded by the molding surfaces of the sealing molds 111a and 111b while being pressed. The sealing resin layer 106 that fills the periphery of the frame member 102 is formed by injecting the void portion excluding the space surrounded by the frame member 102. At this time, a closed space surrounded by the frame member 102 and the sealing mold 111a is formed above the light receiving portion 101b. Further, the molding surface of the sealing mold 111a and the upper surface of the frame member 102 are firmly adhered to each other by an external force caused by clamping pressure, and the light receiving element 101 and the frame member 102 are strongly adhered as described above. At this time, if the elastic modulus of the frame member 102 is 1 GPa or more and 6 GPa or less at 20 ° C. and 10 MPa or more and 3 GPa or less at 200 ° C., the frame member 102 itself is elastically deformed by the clamping pressure by the sealing mold, The light receiving element 101 can be protected by absorbing external force due to pressure. Further, this elastic deformation can generate a reaction force that causes the frame member 102 to be in close contact with the sealing mold 111a. Therefore, the sealing resin cannot flow into the closed space formed inside the frame member 102, that is, above the light receiving unit 101b. In order to increase the adhesion of the sealing mold 111a due to the elastic deformation of the frame material 102 described above, the height of the upper surface of the frame material 102 is between 0 mm and 0.05 mm from the height of the upper surface of the sealing resin layer 106. You may design. Here, in the design where the upper surface of the frame member 102 is higher than 0.05 mm than the upper surface of the sealing resin layer 106, the external force due to the clamping pressure of the sealing mold 111a is increased, and the deformation of the frame member 102 leads to plastic deformation, It may break. On the other hand, if the upper surface of the frame member 102 is lower than the upper surface of the sealing resin layer 106, that is, if the height of the upper surface of the frame member 102 is less than the height of the upper surface of the sealing resin layer 106 (less than 0 mm), the sealing resin It is obvious that the gas flows into the frame member 102.

次いで、封止用金型１１１ａ，１１１ｂを取り外して、図４（ｂ）に示すような枠材１０２の上面と封止樹脂１０６の上面とが同じ高さに形成された受光素子１０１を得る。すなわち、リードフレーム１０４上の複数の受光素子１０１が一括して封止される。   Next, the sealing molds 111a and 111b are removed to obtain the light receiving element 101 in which the upper surface of the frame member 102 and the upper surface of the sealing resin 106 are formed at the same height as shown in FIG. That is, the plurality of light receiving elements 101 on the lead frame 104 are collectively sealed.

次いで、図５（ａ）に示すように、枠材１０２の上面および封止樹脂層１０６の上面を覆う保護テープ１０７を形成する。保護テープ１０７は、受光部１０１ｂを保護する機能を有する。保護テープ１０７としては、特に限定されないが、リフロー温度以上の耐熱性のある剥離可能な樹脂を用いることができる。   Next, as shown in FIG. 5A, a protective tape 107 that covers the upper surface of the frame member 102 and the upper surface of the sealing resin layer 106 is formed. The protective tape 107 has a function of protecting the light receiving unit 101b. The protective tape 107 is not particularly limited, but a peelable resin having a heat resistance equal to or higher than the reflow temperature can be used.

続いて、図５（ｂ）に示すように、受光素子１０１ごとに分割し、所望の形状の電子装置１０８を得る。   Subsequently, as shown in FIG. 5B, the light receiving element 101 is divided to obtain the electronic device 108 having a desired shape.

続いて、電子装置１０８は、必要な電気回路が形成された実装基板１０９上に半田１１０リフロー工法で接続される。その後、保護テープ１０７が除去され、図５（ｃ）に示すように、実装された電子装置１０８が得られる。   Subsequently, the electronic device 108 is connected to the mounting substrate 109 on which a necessary electric circuit is formed by a solder 110 reflow method. Thereafter, the protective tape 107 is removed, and the mounted electronic device 108 is obtained as shown in FIG.

電子装置１０８とは、半導体基板やガラス基板の表面に、受動素子または能動素子の一方または両方が形成されたものをいう。   The electronic device 108 refers to a semiconductor substrate or a glass substrate on which one or both of a passive element and an active element are formed.

本実施形態の効果を説明する。
電子装置１０８は、枠材１０２の上面と、封止樹脂層１０６の上面と、が同一平面をなす構造を有している。かかる構造の電子装置１０８によれば、枠材１０２の上面と、封止樹脂層１０６の上面とを覆う保護テープ１０７の接着および除去を容易にできる。そのため、受光部１０１ｂの汚染が低減できる。また、電子装置１０８の使用時には、露出した受光部１０１ｂの光路上にある保護テープ１０７を容易に排除できるので、光信号の減衰を防止できる。このため、高い信頼性を有する電子装置１０８が実現される。 The effect of this embodiment will be described.
The electronic device 108 has a structure in which the upper surface of the frame member 102 and the upper surface of the sealing resin layer 106 are on the same plane. According to the electronic device 108 having such a structure, it is possible to easily attach and remove the protective tape 107 that covers the upper surface of the frame member 102 and the upper surface of the sealing resin layer 106. Therefore, contamination of the light receiving unit 101b can be reduced. Further, when the electronic device 108 is used, the protective tape 107 on the optical path of the exposed light receiving portion 101b can be easily removed, so that attenuation of the optical signal can be prevented. For this reason, the electronic device 108 having high reliability is realized.

また、電子装置１０８の製造の際に、保護テープ１０７は、実装基板１０９に電子装置１０８が接続された後に、除去される。そのため、電子装置１０８の実装基板１０９への実装の際に、枠材１０２の内部に異物などが浸入し、受光部１０１ｂが汚染されるのを抑制できる。   Further, when the electronic device 108 is manufactured, the protective tape 107 is removed after the electronic device 108 is connected to the mounting substrate 109. Therefore, when the electronic device 108 is mounted on the mounting substrate 109, it is possible to prevent foreign matter and the like from entering the frame member 102 and contaminating the light receiving unit 101b.

電子装置１０８の製造方法は、枠材１０２の上面およびリードフレーム１０４の下面にそれぞれ平坦な面を成型面とする封止用金型１１１ａ，１１１ｂの成型面を圧接し、封止用金型１１１ａ，１１１ｂの成型面に囲まれた空隙部分のうち、枠材１０２に囲まれた空間を除く空隙部分に封止樹脂を注入して、枠材１０２の周囲を埋める封止樹脂層１０６を形成している。そのため、枠材１０２の上面と、封止樹脂層１０６の上面と、が同一平面をなす構造を簡便な方法により得ることができる。そのため、電子装置１０８の生産性が向上できる。   The manufacturing method of the electronic device 108 is such that the molding surfaces of the sealing molds 111a and 111b having a flat surface as the molding surface are pressed against the upper surface of the frame member 102 and the lower surface of the lead frame 104, respectively. , 111b, a sealing resin layer 106 that fills the periphery of the frame member 102 is formed by injecting a sealing resin into the void portion excluding the space surrounded by the frame member 102. ing. Therefore, a structure in which the upper surface of the frame member 102 and the upper surface of the sealing resin layer 106 are on the same plane can be obtained by a simple method. Therefore, the productivity of the electronic device 108 can be improved.

また、樹脂膜１０２ａは、均一な厚みを持つフィルムであるため、ウエハ１０１ａ全面に一括して均一な高さを持つ枠材１０２が構築できる。これにより、受光素子１０１上の枠材１０２の高さのバラツキを抑え、かつ、一括処理して封止がおこなえる。そのため、電子装置１０８の生産性が向上できる。   Further, since the resin film 102a is a film having a uniform thickness, the frame material 102 having a uniform height can be constructed on the entire surface of the wafer 101a. Thereby, the variation in the height of the frame member 102 on the light receiving element 101 is suppressed, and sealing can be performed by batch processing. Therefore, the productivity of the electronic device 108 can be improved.

また、枠材１０２は、電子装置１０８の製造過程において、受光部１０１ｂを保護でき、電子装置１０８の完成後においても除去されない。そのため、枠材１０２を除去する工程が省略でき、製造工程数の増大を招くことなく、信頼性の高い電子装置１０８を得ることができる。   Further, the frame member 102 can protect the light receiving portion 101b in the manufacturing process of the electronic device 108, and is not removed even after the electronic device 108 is completed. Therefore, the step of removing the frame member 102 can be omitted, and the highly reliable electronic device 108 can be obtained without increasing the number of manufacturing steps.

なお、本実施形態においては、樹脂膜１０２ａの厚さが０．０８ｍｍである例を示したが、樹脂膜１０２ａの厚さは適宜調整でき、枠材１０２の高さを０．０８ｍｍ以上、より好ましくは０．１ｍｍ以上とする場合には、樹脂膜１０２ａの厚さをさらに厚くしてもよい。また、本実施形態においては、樹脂膜１０２ａが一層である例を示したが、樹脂膜１０２ａは何層であってもよい。   In this embodiment, the example in which the thickness of the resin film 102a is 0.08 mm is shown, but the thickness of the resin film 102a can be adjusted as appropriate, and the height of the frame member 102 is set to 0.08 mm or more. When the thickness is preferably 0.1 mm or more, the thickness of the resin film 102a may be further increased. In the present embodiment, an example in which the resin film 102a is a single layer has been described, but the resin film 102a may have any number of layers.

（第２実施形態）
図７は、第２実施形態における電子装置の製造工程を示す断面図である。第１実施形態が保護テープ１０７を適用した構造であったのに対し、本実施形態は保護ガラス２０７を適用した構造である。その他の構成は、第１実施形態と同様である。 (Second Embodiment)
FIG. 7 is a cross-sectional view showing the manufacturing process of the electronic device according to the second embodiment. The first embodiment has a structure to which the protective tape 107 is applied, whereas the present embodiment has a structure to which the protective glass 207 is applied. Other configurations are the same as those of the first embodiment.

保護ガラス２０７は、枠材１０２の上面と、封止樹脂層１０６の上面とがなす同一の平面上に形成されている。保護ガラス２０７としては、光学的に透明なガラスを用いることができる。
かかる構成の電子装置２０８は、図２（ａ）から図４（ｂ）に示す製造工程までは、電子装置１０８と同様にして製造することができる。ここでは、図４（ｂ）に示す工程以後の製造工程について説明する。 The protective glass 207 is formed on the same plane formed by the upper surface of the frame member 102 and the upper surface of the sealing resin layer 106. As the protective glass 207, an optically transparent glass can be used.
The electronic device 208 having such a configuration can be manufactured in the same manner as the electronic device 108 from the manufacturing steps shown in FIGS. 2A to 4B. Here, the manufacturing process after the process shown in FIG. 4B will be described.

まず、図７（ａ）に示すように、枠材１０２の上面と、封止樹脂層１０６の上面とを覆うように保護ガラス２０７を貼り付ける。ここで、保護ガラス２０７はリフロー温度以上の耐熱性のある接着剤で貼り付けられている。
次に、図７（ｂ）に示すように、リードフレーム１０４上に複数形成されている電子装置２０８を個々に切り出して、所望の形状の電子装置２０８を得る。
次に、図７（ｃ）に示すように、電子装置２０８は必要な電気回路が形成された実装基板１０９に半田１１０によりリフロー工法で接続され、実装される。 First, as shown in FIG. 7A, a protective glass 207 is attached so as to cover the upper surface of the frame member 102 and the upper surface of the sealing resin layer 106. Here, the protective glass 207 is affixed with an adhesive having a heat resistance equal to or higher than the reflow temperature.
Next, as shown in FIG. 7B, a plurality of electronic devices 208 formed on the lead frame 104 are individually cut out to obtain an electronic device 208 having a desired shape.
Next, as shown in FIG. 7C, the electronic device 208 is connected to the mounting board 109 on which a necessary electric circuit is formed by solder 110 using a reflow method and mounted.

第２実施形態における電子装置２０８では、保護ガラス２０７を光学的に透明なガラスを用いるので、リフロー工程終了後に、保護ガラス２０７を引き剥がす工程が不要となる効果を奏する。   In the electronic device 208 according to the second embodiment, since the protective glass 207 is made of an optically transparent glass, there is an effect that a step of peeling off the protective glass 207 after the reflow process is unnecessary.

本実施形態においても、枠材１０２の上面と、封止樹脂層１０６の上面とが同一の平面をなす構造を有しているため、保護ガラス２０７の貼り付けを容易にする電子装置２０８およびその製造方法が実現されている。本実施形態のその他の効果は、上記実施形態と同様である。   Also in this embodiment, since the upper surface of the frame member 102 and the upper surface of the sealing resin layer 106 have the same plane, the electronic device 208 that makes it easy to attach the protective glass 207 and the electronic device 208 A manufacturing method has been realized. Other effects of this embodiment are the same as those of the above embodiment.

（第３実施形態）
図８は、第３実施形態における電子装置の製造工程を示す断面図である。第３実施形態における電子装置の構成は、第１実施形態における電子装置１０８と同様である。
第３実施形態における電子装置の枠材３０２は、図８に示すような製造工程により形成される。その他の製造工程は、第１実施形態と同様である。図８（ａ）から図８（ｄ）は、図２（ａ）から図２（ｄ）に対応する。その他の製造工程は、第１実施形態と同様であるので説明は省略する。 (Third embodiment)
FIG. 8 is a cross-sectional view illustrating a manufacturing process of the electronic device according to the third embodiment. The configuration of the electronic device in the third embodiment is the same as that of the electronic device 108 in the first embodiment.
The frame material 302 of the electronic device in the third embodiment is formed by a manufacturing process as shown in FIG. Other manufacturing processes are the same as those in the first embodiment. FIGS. 8A to 8D correspond to FIGS. 2A to 2D. Since other manufacturing processes are the same as those in the first embodiment, the description thereof will be omitted.

まず、図８（ａ）に示すように、複数の受光素子１０１が形成されたウエハ１０１ａを準備する。このウエハ１０１ａに配置されたそれぞれの受光素子１０１の表面には、受光部１０１ｂが露出している。なお図８（ａ）では、ウエハ１０１ａに配置された複数の受光素子１０１のうち、２つのみを示している。
また、フィルム状に形成され光および熱により硬化可能な樹脂からなる樹脂膜３０２ａを用意する。樹脂膜３０２ａには、枠材３０２の空洞部分に相当する開口部が予め穿孔されている。
次に、図８（ｂ）に示すように、樹脂膜３０２ａが有する開口部の内側に受光部１０１ｂが収まるように位置決めをした上で、樹脂膜３０２ａによりウエハ１０１ａ全体を被覆する。 First, as shown in FIG. 8A, a wafer 101a on which a plurality of light receiving elements 101 are formed is prepared. A light receiving portion 101b is exposed on the surface of each light receiving element 101 arranged on the wafer 101a. In FIG. 8A, only two of the light receiving elements 101 arranged on the wafer 101a are shown.
In addition, a resin film 302a made of a resin that is formed into a film and can be cured by light and heat is prepared. In the resin film 302a, an opening corresponding to the hollow portion of the frame member 302 is previously perforated.
Next, as shown in FIG. 8B, after positioning so that the light receiving portion 101b is accommodated inside the opening of the resin film 302a, the entire wafer 101a is covered with the resin film 302a.

続いて、図８（ｃ）に示すように、露光を行い、枠材３０２を形成するように樹脂膜３０２ａをパターニングする。   Subsequently, as illustrated in FIG. 8C, exposure is performed, and the resin film 302 a is patterned so as to form the frame member 302.

さらに、図８（ｄ）に示すように、現像処理を行い、枠材３０２以外の樹脂膜３０２ａを除去し、受光部１０１ｂをそれぞれ囲むように立設した枠材３０２が形成される。
このように、枠材３０２は、フォトリソグラフィ工法を用いて形成することができる。
なお、この現像処理後の時点では、枠材３０２は完全に硬化していないため、枠材３０２と受光素子１０１とは、弱い接合力により接着しているが、強固には接着していない。 Further, as shown in FIG. 8D, development processing is performed, the resin film 302a other than the frame material 302 is removed, and the frame material 302 standing so as to surround each of the light receiving portions 101b is formed.
Thus, the frame member 302 can be formed using a photolithography method.
Note that since the frame member 302 is not completely cured at the time after the development processing, the frame member 302 and the light receiving element 101 are bonded by a weak bonding force, but are not firmly bonded.

枠材３０２の内側の空洞部が予め形成されているため、現像処理のみでは完全に除去することが困難であった枠材３０２の内側での樹脂膜３０２ａの残留を防止できる。そのため、受光部１０１ｂの汚染がさらに抑制でき、より信頼性の高い電子装置およびその製造方法が実現される。
また、第１実施形態で説明したような枠材１０２の内壁と外壁が同時に形成される製造方法では、枠材１０２の内壁を受光素子１０１表面に対し垂直に形成することが困難であるのに対し、第３実施形態で説明したような枠材３０２は、樹脂膜３０２ａに予め開口部を形成することで、枠材３０２の内壁を受光素子１０１表面に対し垂直に形成することができる。このため受光部１０１ｂと枠材３０２の距離を縮小でき、受光部１０１ｂの汚染がさらに低減できる。また、電子装置のサイズの縮小も可能になるという効果を奏する。 Since the cavity inside the frame member 302 is formed in advance, it is possible to prevent the resin film 302a from remaining inside the frame member 302, which has been difficult to remove completely only by the development process. Therefore, contamination of the light receiving unit 101b can be further suppressed, and a more reliable electronic device and a manufacturing method thereof are realized.
Further, in the manufacturing method in which the inner wall and the outer wall of the frame member 102 are simultaneously formed as described in the first embodiment, it is difficult to form the inner wall of the frame member 102 perpendicular to the surface of the light receiving element 101. On the other hand, in the frame member 302 as described in the third embodiment, the inner wall of the frame member 302 can be formed perpendicular to the surface of the light receiving element 101 by forming an opening in the resin film 302a in advance. For this reason, the distance between the light receiving portion 101b and the frame member 302 can be reduced, and contamination of the light receiving portion 101b can be further reduced. In addition, the electronic device can be reduced in size.

本実施形態においても、電子装置の構成は第１実施形態と同様である。本実施形態のその他の効果は、上記実施形態と同様である。   Also in this embodiment, the configuration of the electronic device is the same as that of the first embodiment. Other effects of this embodiment are the same as those of the above embodiment.

（第４実施形態）
図９は、第４実施形態における電子装置の製造工程を示す断面図である。第４実施形態における電子装置の構成は、第１実施形態における電子装置１０８と同様である。
第４実施形態における電子装置は、図９に示すような製造工程により形成される。その他の製造工程は、第１実施形態と同様である。図９（ａ）、（ｂ）は、図４（ａ）、（ｂ）に対応する。その他の製造工程は、第１実施形態と同様であるので説明は省略する。 (Fourth embodiment)
FIG. 9 is a cross-sectional view illustrating a manufacturing process of the electronic device according to the fourth embodiment. The configuration of the electronic device in the fourth embodiment is the same as that of the electronic device 108 in the first embodiment.
The electronic device according to the fourth embodiment is formed by a manufacturing process as shown in FIG. Other manufacturing processes are the same as those in the first embodiment. 9A and 9B correspond to FIGS. 4A and 4B. Since other manufacturing processes are the same as those in the first embodiment, the description thereof will be omitted.

まず、図９（ａ）に示すように、平坦な面を成型面とする封止用金型１１１ａ，１１１ｂを用意し、封止用金型１１１ａの成型面に真空吸着により、樹脂フィルム４１２を装着する。続けて、リードフレーム１０４上の受光素子１０１を、封止用金型１１１ａ，１１１ｂの所定の位置に固定する。
次に、枠材４０２の上面に封止用金型１１１ａの成型面を、リードフレーム１０４の下面に封止用金型１１１ｂの成型面を、それぞれ圧接する。すなわち、枠材４０２の上面と封止用金型１１１ａの成型面との間に樹脂フィルム４１２を挟んで圧接する。これにより、樹脂フィルム４１２を介して枠材４０２の上面と封止用金型１１１ａの成型面とのすき間、およびリードフレーム１０４の下面と封止用金型１１１ｂの成型面とのすき間を最小限におさえ、両者をそれぞれ密着する。 First, as shown in FIG. 9A, sealing molds 111a and 111b having a flat surface as a molding surface are prepared, and a resin film 412 is attached to the molding surface of the sealing mold 111a by vacuum suction. Installing. Subsequently, the light receiving element 101 on the lead frame 104 is fixed at a predetermined position of the sealing molds 111a and 111b.
Next, the molding surface of the sealing mold 111 a is pressed against the upper surface of the frame member 402, and the molding surface of the sealing mold 111 b is pressed against the lower surface of the lead frame 104. That is, the resin film 412 is sandwiched between the upper surface of the frame member 402 and the molding surface of the sealing mold 111a so as to be pressed. This minimizes the gap between the upper surface of the frame member 402 and the molding surface of the sealing mold 111a and the gap between the lower surface of the lead frame 104 and the molding surface of the sealing mold 111b via the resin film 412. In addition, both are in close contact with each other.

次いで、図９（ｂ）に示すように、圧接された状態のまま、熱によって溶融した封止樹脂を、封止用金型１１１ａ，１１１ｂのそれぞれの成型面に囲まれた空隙部分のうち、枠材４０２に囲まれた空間を除く空隙部分に注入し、枠材４０２の周囲を埋める封止樹脂層１０６を形成する。この時、受光部１０１ｂの上方には、枠材４０２と封止用金型１１１ａとで囲まれた閉空間が形成されている。さらに、封止用金型１１１ａの成型面と枠材４０２の上面との間は挟圧による外力で強固に密着され、かつ受光素子１０１と枠材４０２の間は前述の通り強く接着されている。よって、封止樹脂は、枠材４０２の内側、すなわち受光部１０１ｂの上方に形成された閉空間に流れ込めない。   Next, as shown in FIG. 9 (b), the sealing resin melted by heat is kept in the pressure contact state, among the void portions surrounded by the respective molding surfaces of the sealing molds 111a and 111b, The sealing resin layer 106 that fills the periphery of the frame material 402 is formed by injecting it into the void portion excluding the space surrounded by the frame material 402. At this time, a closed space surrounded by the frame member 402 and the sealing mold 111a is formed above the light receiving portion 101b. Further, the molding surface of the sealing mold 111a and the upper surface of the frame member 402 are firmly adhered by an external force due to clamping pressure, and the light receiving element 101 and the frame member 402 are strongly adhered as described above. . Therefore, the sealing resin cannot flow into the closed space formed inside the frame member 402, that is, above the light receiving unit 101b.

次いで、封止用金型１１１ａ，１１１ｂを取り外して、図９（ｂ）に示すような受光素子１０１を得る。すなわち、リードフレーム１０４上の複数の受光素子１０１が一括して封止される。この際、樹脂フィルム４１２は封止用金型１１１ａに吸着されているので、枠材４０２の上面および封止樹脂層１０６の上面に残らない。   Next, the sealing molds 111a and 111b are removed to obtain the light receiving element 101 as shown in FIG. That is, the plurality of light receiving elements 101 on the lead frame 104 are collectively sealed. At this time, since the resin film 412 is adsorbed to the sealing mold 111 a, it does not remain on the upper surface of the frame member 402 and the upper surface of the sealing resin layer 106.

本実施形態において、枠材４０２の弾性率は、９ＧＰａである。そのため、枠材４０２の剛性が向上し、枠材４０２内の空洞部への封止樹脂の浸入防護がより強力になり、受光部１０１ｂを一層保護できる。さらに、枠材４０２の弾性率が６ＧＰａ以上であった場合、上述のようにして、封止用金型１１１ａにより枠材４０２の上面が直接挟圧されると、枠材４０２の弾性変形が充分でなく、挟圧による外力が受光素子１０１に及ぶ可能性がある。そのため、受光素子１０１が破壊され、受光部１０１ｂの機能が害され、さらには対環境試験で劣化を招く原因となりうる。しかし、本実施形態においては、枠材４０２の上面と封止用金型１１１ａの成型面との間には、樹脂フィルム４１２が挟まれているため、樹脂フィルム４１２が緩衝材として機能し、受光素子１０１が破壊され、受光部１０１ｂの機能が害されるといった不具合を回避できる。   In this embodiment, the elastic modulus of the frame member 402 is 9 GPa. Therefore, the rigidity of the frame member 402 is improved, the protection of the sealing resin from entering the hollow portion in the frame member 402 becomes stronger, and the light receiving portion 101b can be further protected. Further, when the elastic modulus of the frame member 402 is 6 GPa or more, if the upper surface of the frame member 402 is directly clamped by the sealing mold 111a as described above, the frame member 402 is sufficiently elastically deformed. In addition, an external force due to the pinching pressure may reach the light receiving element 101. Therefore, the light receiving element 101 is destroyed, the function of the light receiving unit 101b is impaired, and further, it can cause deterioration in an environmental test. However, in this embodiment, since the resin film 412 is sandwiched between the upper surface of the frame member 402 and the molding surface of the sealing mold 111a, the resin film 412 functions as a buffer material and receives light. It is possible to avoid such a problem that the element 101 is destroyed and the function of the light receiving unit 101b is impaired.

また、枠材４０２の弾性率は、６ＧＰａ以上であってもよいため、枠材４０２の材料としての第１の樹脂の選択の自由度を向上できる。また、完全硬化後の弾性率が９ＧＰａの樹脂を材料として枠材４０２を形成するために、枠材４０２の剛性が向上し、受光部１０１ｂへの封入時の溶融封入樹脂の浸入防護がより強くなる、という効果を奏する。   Further, since the elastic modulus of the frame member 402 may be 6 GPa or more, the degree of freedom in selecting the first resin as the material of the frame member 402 can be improved. Further, since the frame member 402 is formed using a resin having a modulus of elasticity of 9 GPa after complete curing, the rigidity of the frame member 402 is improved, and the infiltration protection of the molten encapsulated resin when sealed in the light receiving unit 101b is stronger. The effect of becoming.

また、枠材４０２の弾性率とは、光および熱により完全に硬化した状態の弾性率をいう。
枠材４０２は、第１樹脂から形成されている。第１樹脂は、光および熱により硬化可能な樹脂を硬化させたものである。光および熱により硬化可能な樹脂とは、アクリル系樹脂などの光反応性樹脂と、エポキシ樹脂などの熱硬化性樹脂とを含む樹脂である。 Further, the elastic modulus of the frame member 402 refers to an elastic modulus in a state of being completely cured by light and heat.
The frame member 402 is formed from the first resin. The first resin is obtained by curing a resin that can be cured by light and heat. The resin curable by light and heat is a resin including a photoreactive resin such as an acrylic resin and a thermosetting resin such as an epoxy resin.

樹脂フィルム４１２の弾性率は、３ＧＰａである。そのため、封止用金型１１１ａにより枠材４０２の上面を圧接した際に、弾性変形し緩衝材と機能し、受光素子１０１を保護できる。   The elastic modulus of the resin film 412 is 3 GPa. Therefore, when the upper surface of the frame material 402 is pressed into contact with the sealing mold 111a, it is elastically deformed and functions as a buffer material, so that the light receiving element 101 can be protected.

なお、本実施形態においては枠材４０２の上面と封止用金型１１１ａの成型面との間には、樹脂フィルム４１２が挟まれている例を示したが、リードフレーム１０４の下面と封止用金型１１１ｂの成型面との間に、同様の樹脂フィルムを挟んで圧接してもよい。こうすることにより、リードフレーム１０４の下面と封止用金型１１１ｂの成型面との間に溶融した封止樹脂が浸入するといった不具合を回避できる。   In this embodiment, an example in which the resin film 412 is sandwiched between the upper surface of the frame member 402 and the molding surface of the sealing mold 111a is shown. A similar resin film may be sandwiched and pressed between the molding surface of the mold 111b. By doing so, it is possible to avoid the problem that the molten sealing resin enters between the lower surface of the lead frame 104 and the molding surface of the sealing mold 111b.

（第５実施形態）
図１０（ａ）は、第５実施形態における電子装置を示す斜視図、図１０（ｂ）は、図１０（ａ）のＩＩＩ−ＩＩＩ'で切断した断面図である。第１実施形態が枠材の上面と、封止樹脂層の上面とが同一平面をなす構造であったのに対し、本実施形態は枠材の上面が、封止樹脂層の上面よりも高くなり、上方に突き出た構造である。その他の構成は、第１実施形態と同様である。図１０（ａ）、（ｂ）はそれぞれ図１（ａ）、（ｂ）に対応する。第５実施形態における電子装置の製造方法は、図２（ａ）から図５（ｃ）に示した第１実施形態における電子装置の製造方法と同様である。 (Fifth embodiment)
FIG. 10A is a perspective view showing an electronic device according to the fifth embodiment, and FIG. 10B is a cross-sectional view taken along line III-III ′ of FIG. While the first embodiment has a structure in which the upper surface of the frame member and the upper surface of the sealing resin layer are in the same plane, the upper surface of the frame member is higher than the upper surface of the sealing resin layer in the present embodiment. This is a structure protruding upward. Other configurations are the same as those of the first embodiment. FIGS. 10A and 10B correspond to FIGS. 1A and 1B, respectively. The manufacturing method of the electronic device in the fifth embodiment is the same as the manufacturing method of the electronic device in the first embodiment shown in FIGS. 2 (a) to 5 (c).

試作結果において、電子装置の製造工程における枠材５０２の高さのばらつきは、標準偏差で約１０マイクロメータである。枠材５０２の高さのばらつきとは、均一な厚みを持つ第１樹脂からなるフィルムをフォトリソグラフィ工法を用いて形成する際、露光時の光量や現像処理時の現像液や処理時間の変化など、枠材５０２の形成工程において生じうる枠材５０２の高さの差である。枠材５０２の高さは、このような製造工程におけるばらつきを考慮し、最も低い場合でも封止樹脂層１０６よりも高くしなくては、第２樹脂（封止樹脂）が枠材５０２内側に浸入して空洞部を破壊してしまう可能性がある。   In the prototype result, the variation in the height of the frame member 502 in the manufacturing process of the electronic device is about 10 micrometers in standard deviation. The variation in the height of the frame member 502 is, for example, a change in the amount of light at the time of exposure, the developing solution at the time of development processing, or the processing time when a film made of the first resin having a uniform thickness is formed using a photolithography method. This is a difference in height of the frame material 502 that can occur in the process of forming the frame material 502. Considering such a variation in the manufacturing process, the height of the frame member 502 must be higher than the sealing resin layer 106 even in the lowest case, so that the second resin (sealing resin) is placed inside the frame member 502. There is a possibility that it will penetrate and destroy the cavity.

これに対して本実施形態における電子装置は、図１０（ａ）に示すように、枠材５０２の上面は、封止樹脂層１０６の上面よりも１０マイクロメータから６０マイクロメータ、高くなっている。このような枠材５０２の高さは、枠材５０２の高さのばらつきの標準偏差の３倍の値である約３０マイクロメータ封止樹脂層１０６の上面よりも高くなるように設計することにより得られる。またこのような枠材５０２の高さの設計は、封止工程において枠材５０２を圧接する圧力を調整すること等によって、適宜設定できる。   In contrast, in the electronic device according to the present embodiment, as shown in FIG. 10A, the upper surface of the frame member 502 is higher by 10 to 60 micrometers than the upper surface of the sealing resin layer 106. . The height of the frame member 502 is designed to be higher than the upper surface of the sealing resin layer 106 of about 30 micrometers, which is three times the standard deviation of the height variation of the frame member 502. can get. Further, the design of the height of the frame member 502 can be appropriately set by adjusting the pressure with which the frame member 502 is pressed in the sealing process.

第５実施形態における電子装置は、第１実施形態と同様の効果が得られる。また、枠材５０２の上面が、枠材５０２の高さのばらつきの標準偏差値の３倍分、封止樹脂層１０６の上面より高くなっていても、枠材５０２内の空洞部への封止樹脂の浸入が抑制でき、信頼性の高い電子装置が得られる。したがって、電子装置の製造工程において、標準偏差で約１０マイクロメータ程度の枠材５０２の高さのばらつきが生じても、封止樹脂が枠材５０２の内側に浸入して空洞部を破壊し、受光部１０１ｂを汚染してしまうのを抑制することができる。   The electronic device according to the fifth embodiment can obtain the same effects as those of the first embodiment. Even if the upper surface of the frame member 502 is higher than the upper surface of the sealing resin layer 106 by three times the standard deviation value of the height variation of the frame member 502, the frame member 502 is sealed in the cavity portion. Infiltration of the stop resin can be suppressed, and a highly reliable electronic device can be obtained. Therefore, in the manufacturing process of the electronic device, even if the height variation of the frame material 502 of about 10 micrometers with a standard deviation occurs, the sealing resin enters the inside of the frame material 502 and destroys the cavity, Contamination of the light receiving unit 101b can be suppressed.

さらに、図１０（ｂ）に示すように、枠材５０２の上面が封止樹脂層１０６の上面よりも高い構成により、封止用金型１１１ａ，１１１ｂの成型面へ圧接する際の枠材５０２にかかる圧力をより強くすることが可能となる（図４（ａ）参照）。そのため、枠材５０２内の空洞部への封止樹脂の浸入防護がより強力になり、受光部１０１ｂをいっそう保護できる。   Further, as shown in FIG. 10B, the frame material 502 is in pressure contact with the molding surfaces of the sealing molds 111 a and 111 b with a configuration in which the upper surface of the frame material 502 is higher than the upper surface of the sealing resin layer 106. It is possible to further increase the pressure applied to (see FIG. 4A). As a result, the penetration protection of the sealing resin into the hollow portion in the frame member 502 becomes stronger, and the light receiving portion 101b can be further protected.

（第６実施形態）
図１１は、第６実施形態における電子装置の製造工程を示す断面図である。第６実施形態における電子装置の構成は、第１実施形態の枠材は１層の第１樹脂で形成される構造であったのに対し、本実施形態の枠材は第１樹脂からなるフィルムを２枚重ね合わせており、枠材の高さをより高くした２層の構造である。その他の構成は、第１実施形態と同様である。
第６実施形態における電子装置の枠材６０２は、図１１に示すような製造工程により形成される。その他の製造工程は、第１実施形態と同様であるので説明は省略する。 (Sixth embodiment)
FIG. 11 is a cross-sectional view illustrating the manufacturing process of the electronic device according to the sixth embodiment. The configuration of the electronic device in the sixth embodiment is a structure in which the frame material of the first embodiment is formed by a single layer of the first resin, whereas the frame material of the present embodiment is a film made of the first resin. Is a two-layer structure in which two frames are stacked and the height of the frame material is increased. Other configurations are the same as those of the first embodiment.
The frame member 602 of the electronic device in the sixth embodiment is formed by a manufacturing process as shown in FIG. Since other manufacturing processes are the same as those in the first embodiment, the description thereof will be omitted.

まず、図１１（ａ）に示すように、ウエハ１０１ａを準備する。このウエハ１０１ａは複数の受光素子１０１が形成され、夫々の受光素子１０１の表面には受光部１０１ｂが露出している。なお図１１（ａ）では、ウエハ１０１ａに配置された受光素子１０１のうち、２つのみを示しており、２つの受光部１０１ｂが露出している。   First, as shown in FIG. 11A, a wafer 101a is prepared. A plurality of light receiving elements 101 are formed on the wafer 101a, and a light receiving portion 101b is exposed on the surface of each light receiving element 101. In FIG. 11A, only two of the light receiving elements 101 arranged on the wafer 101a are shown, and the two light receiving portions 101b are exposed.

次に、図１１（ｂ）に示すように、フィルム状に形成された光および熱により硬化可能な樹脂からなる厚み０．０６ｍｍの樹脂膜６０２ａ、６０２ｂを用意する。樹脂膜６０２ａと６０２ｂとをロールラミネーター法によりロール６０３ａ、および６０３ｂの間を、圧力をかけながら重ね合わせることにより、「ゆがみ」や「しわ」がほとんどない樹脂膜６０２ｃを得る。また、樹脂膜６０２ａ、６０２ｂとしていずれも均一な厚みを持つフィルムを用いるため、樹脂膜６０２ａと６０２ｂが重なり合った樹脂膜６０２ｃも均一な厚みを持つフィルムとなる（図１１（ｃ））。   Next, as shown in FIG. 11B, resin films 602a and 602b having a thickness of 0.06 mm made of a resin curable by light and heat formed in a film shape are prepared. By overlapping the resin films 602a and 602b between the rolls 603a and 603b by a roll laminator method while applying pressure, a resin film 602c having almost no “distortion” or “wrinkle” is obtained. Further, since a film having a uniform thickness is used as each of the resin films 602a and 602b, the resin film 602c in which the resin films 602a and 602b overlap is also a film having a uniform thickness (FIG. 11C).

次に、図１１（ｄ）に示すように、樹脂膜６０２ｃをウエハ１０１ａ上に真空ラミネーター法により、樹脂膜６０２ｃとウエハ１０１ａの接触面には気泡などの発生がほとんど無い形成を行い、樹脂膜６０２ｃによりウエハ１０１ａ全体を被覆する。樹脂膜６０２ｃの厚さは、０．１２ｍｍである。   Next, as shown in FIG. 11 (d), the resin film 602c is formed on the wafer 101a by a vacuum laminator method so that almost no bubbles are generated on the contact surface between the resin film 602c and the wafer 101a. The entire wafer 101a is covered with 602c. The thickness of the resin film 602c is 0.12 mm.

続いて、１１（ｅ）に示すように、露光を行い、枠材６０２を形成するように樹脂膜６０２ｃをパターニングする。   Subsequently, as shown in 11 (e), exposure is performed and the resin film 602 c is patterned so as to form the frame member 602.

さらに、図１１（ｆ）に示すように、現像処理を行い、枠材６０２以外の樹脂膜６０２ｃを除去し、受光部１０１ｂをそれぞれ囲むように立設した枠材６０２が形成される。
試作結果によって、このように枠材６０２は、樹脂膜６０２ａと６０２ｂが重なり合った樹脂膜６０２ｃであっても、フォトリソグラフィ工法を用いて形成することができる。 Further, as shown in FIG. 11 (f), development processing is performed to remove the resin film 602 c other than the frame material 602, and the frame material 602 erected so as to surround the light receiving portion 101 b is formed.
Depending on the result of trial manufacture, the frame member 602 can be formed by using a photolithography method even if the frame member 602 is the resin film 602c in which the resin films 602a and 602b overlap each other.

第６実施形態における電子装置は、第１実施形態と同様の効果が得られる。
本実施形態において、樹脂膜６０３ｃは、第１樹脂として二層のフィルム状樹脂が用いられている。これにより、樹脂膜６０３ｃの厚みを０．０８ｍｍ以上にすることができる。第１樹脂に用いられる溶剤は、フィルム状にするために除去される必要がある。この溶剤を除去するには、樹脂膜６０３ｃの厚みが０．０８ｍｍを越えると除去が困難になる。すなわち、フィルムなどの加工物から溶剤を除去するのが難しくなる。したがって、溶剤を除去でき、加工が容易な０．０８ｍｍ以下のフィルムを２枚重ね合わせて用いることにより、いいかえるとフィルム状の第１樹脂を重ね合わせることにより、樹脂膜６０３ｃの膜厚を大きくすることができる。 The electronic device according to the sixth embodiment can obtain the same effects as those of the first embodiment.
In the present embodiment, the resin film 603c uses a two-layer film resin as the first resin. Thereby, the thickness of the resin film 603c can be 0.08 mm or more. The solvent used for the first resin needs to be removed to form a film. In order to remove this solvent, removal becomes difficult when the thickness of the resin film 603c exceeds 0.08 mm. That is, it becomes difficult to remove the solvent from a workpiece such as a film. Therefore, the film thickness of the resin film 603c is increased by overlapping two films of 0.08 mm or less that can remove the solvent and are easy to process, in other words, by overlapping the film-like first resin. be able to.

また、ウエハ１０１ａ上に樹脂膜６０２ｃを形成する前に、樹脂膜６０２ａと６０２ｂを重ね合わせることにより、樹脂膜６０２ａ、６０２ｂの粘着性のため樹脂膜６０２ａ、６０２ｂ（樹脂膜６０２ｃ）の「ゆがみ」や「しわ」が生じてしまうのを低減できる。すなわち、ウエハ１０１ａ上に順に樹脂膜６０２ａ、６０２ｂを形成する場合、ウエハ１０１ａに最初の１枚、たとえば樹脂膜６０２ａを形成した後、２枚目の樹脂膜、たとえば樹脂膜６０２ｂを更に形成する際、樹脂膜６０２ａ、６０２ｂの粘着性のため樹脂膜６０２ａ、６０２ｂ（樹脂膜６０２ｃ）の「ゆがみ」や「しわ」が生じてしまうのを抑制できる。   Further, before the resin film 602c is formed on the wafer 101a, the resin films 602a and 602b are overlapped to form “distortion” of the resin films 602a and 602b (resin film 602c). And “wrinkles” can be reduced. That is, when the resin films 602a and 602b are sequentially formed on the wafer 101a, the first resin film, for example, the resin film 602a is formed on the wafer 101a, and then the second resin film, for example, the resin film 602b is further formed. Further, due to the adhesiveness of the resin films 602a and 602b, the occurrence of “distortion” and “wrinkle” of the resin films 602a and 602b (resin film 602c) can be suppressed.

また、樹脂膜６０２ａ、６０２ｂの重ね合わせには前述のロールラミネーター法を用いることができる。ロールラミネーター法により、樹脂膜６０２ａ、６０２ｂの圧接部位が樹脂膜内の局部に限られ、樹脂膜同士に粘着性があっても、「ゆがみ」や「しわ」が圧接未了の部位に逃げ、結果として樹脂膜同士を「ゆがみ」や「しわ」がほとんど無く重ね合わせられることができる。   In addition, the above-described roll laminator method can be used for overlaying the resin films 602a and 602b. By the roll laminator method, the pressure contact parts of the resin films 602a and 602b are limited to local portions in the resin film, and even if the resin films are sticky, "distortion" and "wrinkles" escape to the part where pressure welding has not been completed. As a result, the resin films can be overlapped with almost no “distortion” or “wrinkle”.

また、ウエハ１０１ａ上に重ね合わせた樹脂膜６０２ｃを形成する方法は、真空ラミネーター法を用いることができる。すなわち、真空ラミネーター法により、ウエハ１０１ａと樹脂膜６０２ｃとの間の気泡が抜かれ易く、かつ薄いウエハ１０１ａを用いても、ウエハ１０１ａ全体に均一に圧力をかけることができ、ウエハ１０１ａの割れを防ぐことができる。   Further, a vacuum laminator method can be used as a method of forming the resin film 602c superimposed on the wafer 101a. That is, by the vacuum laminator method, air bubbles between the wafer 101a and the resin film 602c can be easily removed, and even when the thin wafer 101a is used, the entire wafer 101a can be uniformly pressed to prevent cracking of the wafer 101a. be able to.

樹脂膜の重ね合わせで形成した枠材６０２は、その高さが高くなり、金属細線１０５の頂点と封止用金型１１１ａ、１１１ｂの離間距離が大きくなり、金属細線１０５の接触をより余裕をもって防ぐことができる（図１１（ｇ）参照）。また、枠材６０２を高くすることで、封止樹脂層１０６と枠材６０２の高さの設計の自由度を増すことが出来る。
第１実施形態の中で述べたように、枠材６０２の高さは封止樹脂層１０６の高さより０．０５ｍｍまで高く設計することが出来る。更に、枠材６０２は封止樹脂層１０６から高くしていけば、弾性変形が強まり、この反力で枠材６０２と封止用金型１１１ａは強く密着でき、封止樹脂層１０６の枠材６０２内側への浸入を抑制できる。枠材６０２を高くすることで封止樹脂層１０６の厚みを確保し、受光素子１０１や金属細線１０５を露出することなく封止樹脂で保護しながら、この封止樹脂層１０６からの枠材６０２の高さを０．０５ｍｍまで高くすることも可能となる。 The frame member 602 formed by superposing the resin films is increased in height, and the distance between the apex of the fine metal wire 105 and the sealing molds 111a and 111b is increased, so that the fine metal wire 105 can be brought into contact with more margin. This can be prevented (see FIG. 11G). In addition, by increasing the frame material 602, the degree of freedom in designing the height of the sealing resin layer 106 and the frame material 602 can be increased.
As described in the first embodiment, the height of the frame member 602 can be designed to be 0.05 mm higher than the height of the sealing resin layer 106. Further, if the frame material 602 is raised from the sealing resin layer 106, the elastic deformation becomes stronger, and the reaction material can strongly adhere the frame material 602 and the sealing mold 111a. The intrusion into the inner side of 602 can be suppressed. The thickness of the sealing resin layer 106 is secured by increasing the frame material 602, and the frame material 602 from the sealing resin layer 106 is protected while being protected by the sealing resin without exposing the light receiving element 101 and the fine metal wire 105. It is also possible to increase the height to 0.05 mm.

本発明による電子装置およびその製造方法は、上記実施形態に限定されるものではなく、様々な変形が可能である。   The electronic device and the manufacturing method thereof according to the present invention are not limited to the above-described embodiment, and various modifications are possible.

例えば、上記各実施形態においては、素子としてＤＶＤなどに用いる受光素子１０１を用いた例を示したが、デジタルビデオカメラ、デジタルスチルカメラに用いる撮像素子、各種のＭＥＭＳ、および電気振動を利用する電気音響フィルター等でもよい。また、低誘電率を必要とするために素子の周囲に空気層が必要な半導体装置などに用いてもよい。また、上記実施形態では、基材をリードフレームで説明したが、リードフレームに限定するものではなく、例えば樹脂基板やフィルム状基板などでも適用できる。   For example, in each of the above-described embodiments, an example in which the light receiving element 101 used for a DVD or the like is used as an element is shown. However, an image pickup element used for a digital video camera, a digital still camera, various MEMS, and an electric device that uses electric vibration. An acoustic filter or the like may be used. Further, it may be used for a semiconductor device or the like that requires an air layer around the element in order to require a low dielectric constant. Moreover, although the base material was demonstrated with the lead frame in the said embodiment, it is not limited to a lead frame, For example, a resin substrate, a film-like board | substrate, etc. are applicable.

１０１ 受光素子
１０１ａ ウエハ
１０１ｂ 受光部
１０２ 枠材
１０２ａ 樹脂膜
１０３ 露光用マスク
１０４ リードフレーム
１０５ 金属細線
１０６ 封止樹脂層
１０７ 保護テープ
１０８ 電子装置
１０９ 実装基板
１１０ 半田
１１１ａ 封止用金型
１１１ｂ 封止用金型
２０７ 保護ガラス
２０８ 電子装置
３０２ 枠材
３０２ａ 樹脂膜
４０２ 枠材
４１２ 樹脂フィルム
５０２ 枠材
６０２ 枠材
６０２ａ 樹脂膜
６０２ｂ 樹脂膜
６０２ｃ 樹脂膜
６０３ａ ローラ
６０３ｂ ローラ DESCRIPTION OF SYMBOLS 101 Light receiving element 101a Wafer 101b Light receiving part 102 Frame material 102a Resin film 103 Exposure mask 104 Lead frame 105 Metal fine wire 106 Sealing resin layer 107 Protective tape 108 Electronic device 109 Mounting substrate 110 Solder 111a Sealing mold 111b Sealing Mold 207 Protective glass 208 Electronic device 302 Frame material 302a Resin film 402 Frame material 412 Resin film 502 Frame material 602 Frame material 602a Resin film 602b Resin film 602c Resin film 603a Roller 603b Roller

Claims (8)

素子と、
前記素子の機能部を囲むように立設する第１樹脂からなる枠材と、
前記枠材の周囲を埋める第２樹脂からなる樹脂層と、を備え、
前記枠材に囲まれた空間に前記素子の機能部が露出し、
前記枠材の上面が、前記樹脂層の上面より高いことを特徴とする電子装置。 Elements,
A frame material made of a first resin standing up to surround the functional portion of the element;
A resin layer made of a second resin filling the periphery of the frame material,
The functional part of the element is exposed in the space surrounded by the frame material,
An electronic device, wherein an upper surface of the frame member is higher than an upper surface of the resin layer. 請求項１に記載の電子装置において、
前記第１樹脂は光および熱により硬化可能な樹脂を硬化させたものであることを特徴とする電子装置。 The electronic device according to claim 1,
The electronic device, wherein the first resin is obtained by curing a resin that can be cured by light and heat. 請求項１または２記載の電子装置において、
前記第１樹脂の硬化後の弾性率が、２０℃で１ＧＰａ以上６ＧＰａ以下、かつ２００℃で１０ＭＰａ以上３ＧＰａ以下であることを特徴とする電子装置。 The electronic device according to claim 1 or 2,
An electronic device having an elastic modulus after curing of the first resin of 1 GPa to 6 GPa at 20 ° C. and 10 MPa to 3 GPa at 200 ° C. 請求項１乃至３いずれかに記載の電子装置において、
前記第１樹脂はフィルム状樹脂であることを特徴とする電子装置。 The electronic device according to any one of claims 1 to 3,
The electronic device is characterized in that the first resin is a film-like resin. 請求項１乃至４いずれかに記載の電子装置において、
前記枠材の高さが０．０５ｍｍ以上であることを特徴とする電子装置。 The electronic device according to claim 1,
The electronic device according to claim 1, wherein a height of the frame member is 0.05 mm or more. 請求項１乃至５いずれかに記載の電子装置において、
前記枠材の上面と、前記樹脂層の上面とがなす平面が保護膜により覆われていることを特徴とする電子装置。 The electronic device according to any one of claims 1 to 5,
An electronic device, wherein a plane formed by the upper surface of the frame member and the upper surface of the resin layer is covered with a protective film. 請求項６に記載の電子装置において、
前記保護膜は、剥離可能な樹脂より形成されることを特徴とする電子装置。 The electronic device according to claim 6.
The electronic device is characterized in that the protective film is made of a peelable resin. 請求項６または７に記載の電子装置において、
前記保護膜は、光学的に透明な物質から形成されることを特徴とする電子装置。 The electronic device according to claim 6 or 7,
The electronic device according to claim 1, wherein the protective film is formed of an optically transparent material.
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