JP2013069713A - Chip type electronic component and manufacturing method of the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To relax stress that a chip type electronic component receives from the exterior and inhibit cracks from occurring in the chip type electronic component.SOLUTION: A chip type electronic component 10 comprises: a ceramic element assembly 11 including a dielectric body; internal electrodes 17, 18 which are disposed in the ceramic element assembly 11 and partially exposing on a surface of the ceramic element assembly 11; and terminal electrodes 20, 30 disposed on the surface of the ceramic element assembly 11. Terminal electrodes 20, 30 include first resin layers 21, 31 which include a first conductive material and a first resin and are disposed on end surfaces 13, 14 where the internal electrodes 17, 18 of the ceramic element assembly 11 are respectively exposed; and second resin layers 22, 32 which include a second resin, contact with at least parts of the first resin layers 21, 31, and have Young's modulus lower than those of the first resin layers 21, 31.

Description

  The present invention relates to a chip-type electronic component having a terminal electrode containing a conductive resin and a method for manufacturing the chip-type electronic component.

  Chip type electronic components having terminal electrodes on the surface of a ceramic body are known. In recent years, one using a conductive resin containing a conductive material and a resin for a terminal electrode of a chip-type electronic component is known (Patent Document 1).

JP-A-3-266404

  Chip-type electronic components are mounted on a circuit board by soldering terminal electrodes to terminals of the circuit board. For example, when a circuit board on which a chip-type electronic component is mounted expands and contracts due to a rapid temperature change, the chip-type electronic component and the circuit board expand and contract, respectively. At this time, as a result of the difference in expansion and contraction amount due to the difference in thermal expansion coefficient between the two, the chip-type electronic component may receive a stress from the circuit board and generate a crack.

  Patent Document 1 does not consider the stress that a chip-type electronic component receives from a circuit board, and there is room for improvement. An object of the present invention is to relieve stress that a chip-type electronic component receives from the outside and suppress cracks generated in the chip-type electronic component.

  The present invention relates to a ceramic body including a dielectric, an internal electrode disposed inside the ceramic body and partially exposed on the surface of the ceramic body, and disposed on the surface of the ceramic body. A first resin that includes a first conductive material and a first resin, and is disposed on a surface side of the ceramic body from which the internal electrode is exposed. And a second resin layer containing a second resin and contacting at least a part of the first resin layer and having a Young's modulus lower than that of the first resin layer. It is a chip-type electronic component.

  This chip-type electronic component includes a terminal electrode having a first resin layer and a second resin layer. For this reason, the stress (external stress) which the 1st resin layer and the 2nd resin layer receive from the exterior of a chip type electronic component can be relieved. In particular, since the Young's modulus of the second resin layer is lower than the Young's modulus of the first resin layer, external stress can be effectively relieved. As a result, in this chip-type electronic component, cracks generated due to external stress are suppressed, and a decrease in durability is suppressed.

  In the present invention, it is preferable that the first resin layer covers the exposed portion of the internal electrode and the surface of the ceramic body from which the internal electrode is exposed. As described above, the first resin layer directly covers the exposed portion of the internal electrode and the surface of the ceramic body from which the internal electrode is exposed, so that a baking layer for connection to the internal electrode is not necessary. As a result, a high-temperature heat treatment for forming the baking layer is not required, so that cracks in the terminal electrode can be suppressed and a decrease in durability can be suppressed.

  In the present invention, the second resin layer preferably includes a second conductive material. If it does in this way, the 2nd resin layer can be directly connected to the terminal electrode of a circuit board. Moreover, the reliability of the connection with the terminal of a circuit board can be improved by forming a plating layer on the surface of the second resin layer using electrolytic plating or the like.

  In the present invention, the first conductive material preferably includes first conductive particles and second conductive particles having a particle size smaller than that of the first conductive particles. In this case, since the second conductive particles are melted before the first conductive particles, when the first resin layer is cured by heating, the second conductive particles Melt. And while the 2nd electroconductive particle connects an internal electrode and 1st electroconductive particle, the 1st electroconductive particle is connected and these electroconductivity is ensured. In addition, the first conductive particles can reduce the contact resistance between the first conductive particles or reduce the stress acting on the first resin layer by suppressing the shrinkage of the first resin, thereby cracking. Or suppress the occurrence of Furthermore, the first conductive particles can improve the adhesion between the second resin layer and the ceramic body.

  In the present invention, the particle diameter of the first conductive particles is preferably 1 μm or more and 10 μm or less, and the particle diameter of the second conductive particles is preferably 0.1 μm or less. By setting the particle diameters of the first conductive particles and the second conductive particles in the above-described range, the above-described effects such as ensuring conductivity and suppressing cracks can be more reliably obtained.

  In the present invention, the first conductive particles preferably have a particle size smaller than the thickness of the internal electrode. If it does in this way, the 2nd electroconductive particle contained in the 1st resin layer can connect an internal electrode and the 1st electroconductive particle more certainly, and can secure conductivity of both.

  In the present invention, the first conductive particles preferably have a particle size larger than the thickness of the internal electrode. In this way, the effect of reducing the contact resistance due to the first conductive particles contained in the first resin layer and the effect of suppressing the generation of cracks due to the action of suppressing the shrinkage of the first resin are more reliably achieved. Can be obtained. In addition, the effect of improving the adhesion between the first conductive particles and the second resin layer and the ceramic body can be obtained more reliably.

  In the present invention, the second resin layer preferably contains particles of a second conductive material. If it does in this way, the 2nd resin layer can be directly connected to the terminal electrode of a circuit board. Moreover, the reliability of the connection with the terminal of a circuit board can be improved by forming a plating layer on the surface of the second resin layer using electrolytic plating or the like.

  In the present invention, the average particle diameter of the first conductive particles and the second conductive particles contained in the first resin layer is larger than the average particle diameter of the particles of the second conductive material. Small is preferable. If it does in this way, the 1st resin layer and an internal electrode can be connected reliably, and the electroconductivity between both can be ensured more reliably. Moreover, the adhesion strength between the first resin layer and the second resin layer can be improved.

  In the present invention, it is preferable that neither the first resin layer nor the second resin layer contains glass frit. If it does in this way, the electroconductivity of the 1st resin layer and the 2nd resin layer will improve.

  In the present invention, it is preferable that the first conductive material and the second conductive material contain Cu or Ni. If it does in this way, the adhesiveness of an internal electrode and a 1st resin layer can be improved, and both electroconductivity can be improved. In addition, it is possible to suppress the phenomenon that the solder component enters the ceramic body from the outside of the terminal electrode.

  In the present invention, it is preferable to further have a plating layer covering the surface of the second resin layer. In this way, the solder wettability is improved by the plating layer, so that the terminal of the circuit board and the terminal electrode can be reliably connected to improve the reliability.

  In the present invention, the second resin layer covers the surface of the first resin layer leaving a part thereof, and a part of the first resin layer and a part of the plating layer are in contact with each other. It is preferable. In this way, since the first resin layer having a relatively high conductivity and the plating layer are directly electrically connected, the equivalent series resistance of the terminal electrode can be reduced.

  In the present invention, it is preferable that in the terminal electrode, the second resin layer is an outermost layer, and the second conductive material contains Sn. In this way, the terminal electrode can be soldered to the terminal of the circuit board without using the plating layer, so that the manufacturing cost of the chip-type electronic component is reduced and the productivity is improved by not providing the plating layer. Can be achieved.

  The present invention provides a step of preparing a ceramic element body having a lead portion with a part of the internal electrode exposed on the surface, and a first resin on the surface where the lead portion and the lead portion of the ceramic element body are exposed. A first mixture containing a first conductive material is applied and cured to form a first resin layer forming step for forming a first resin layer, and a second resin layer is formed on the surface of the first resin layer. A second resin layer forming step of forming a second resin layer by applying and curing a second mixture containing a resin and a second conductive material, the first resin layer forming step, and In the second resin layer forming step, heat treatment is performed so that the Young's modulus of the second resin layer is smaller than the Young's modulus of the first resin layer. It is a manufacturing method.

  In this method of manufacturing a chip-type electronic component, since the first resin layer and the second resin layer are formed on the ceramic body to serve as terminal electrodes, the first resin layer and There is no need to expose the second resin layer. As a result, cracks generated in the terminal electrode due to thermal stress can be suppressed. Further, in order to make the Young's modulus of the second resin layer smaller than the Young's modulus of the first resin layer, it is only necessary to change the conditions of the heat treatment, so the Young's modulus can be adjusted relatively easily.

  In the present invention, in the second resin layer forming step, the time for heating the second mixture is preferably shorter than the time for heating the first mixture in the first resin layer forming step. In this method of manufacturing a chip-type electronic component, in order to make the Young's modulus of the second resin layer smaller than the Young's modulus of the first resin layer, the heating time in the heat treatment may be changed. And Young's modulus can be adjusted reliably.

  In the present invention, in the second resin layer forming step, the temperature for heating the second mixture is preferably lower than the temperature for heating the first mixture in the first resin layer forming step. In this method of manufacturing a chip-type electronic component, in order to make the Young's modulus of the second resin layer smaller than the Young's modulus of the first resin layer, the heating temperature in the heat treatment may be changed. And Young's modulus can be adjusted reliably.

  The present invention can relieve the stress applied to the chip-type electronic component from the outside and suppress cracks generated in the chip-type electronic component.

FIG. 1 is a perspective view of a chip-type electronic component according to the first embodiment. FIG. 2 is a cross-sectional view of the chip-type electronic component according to the first embodiment. FIG. 3 is an enlarged view of a terminal electrode included in the chip-type electronic component according to the first embodiment. FIG. 4 is an enlarged view showing a modification of the terminal electrode included in the chip-type electronic component according to the first embodiment. FIG. 5 is an enlarged view showing a modification of the terminal electrode included in the chip-type electronic component according to the first embodiment. FIG. 6 is a flowchart of the method for manufacturing the chip-type electronic component according to the first embodiment. FIG. 7A is an explanatory diagram of the method for manufacturing the chip-type electronic component according to the first embodiment. FIG. 7-2 is an explanatory diagram of the method for manufacturing the chip-type electronic component according to the first embodiment. FIG. 7C is an explanatory diagram of the method for manufacturing the chip-type electronic component according to the first embodiment. FIG. 7D is an explanatory diagram of the method for manufacturing the chip-type electronic component according to the first embodiment. FIG. 8 is a cross-sectional view of the chip-type electronic component according to the second embodiment. FIG. 9 is an enlarged view of a terminal electrode included in the chip-type electronic component according to the second embodiment. FIG. 10 is an enlarged view showing a first modification of the terminal electrode included in the chip-type electronic component according to the second embodiment. FIG. 11 is an enlarged view showing a second modification of the terminal electrode included in the chip-type electronic component according to the second embodiment. FIG. 12 is a flowchart of the method for manufacturing the chip-type electronic component according to the second embodiment. FIG. 13A is an explanatory diagram of the method for manufacturing the chip-type electronic component according to the second embodiment. FIG. 13-2 is an explanatory diagram of the method for manufacturing the chip-type electronic component according to the second embodiment. FIG. 13C is an explanatory diagram of the method for manufacturing the chip-type electronic component according to the second embodiment. FIG. 13D is an explanatory diagram of the method for manufacturing the chip-type electronic component according to the second embodiment. FIG. 13-5 is an explanatory diagram of the method for manufacturing the chip-type electronic component according to the second embodiment. FIG. 13-6 is an explanatory diagram of the manufacturing method of the chip-type electronic component according to the second embodiment. FIG. 14 is a cross-sectional view of the chip-type electronic component according to the third embodiment. FIG. 15 is a cross-sectional view of the chip-type electronic component according to the fourth embodiment.

    A mode for carrying out the present invention (hereinafter referred to as an embodiment) will be described in detail with reference to the drawings. The present invention is not limited by the contents described in the following embodiments. The configurations described below include those that can be easily assumed by those skilled in the art and those that are substantially the same. Furthermore, the configurations disclosed below can be combined as appropriate. Furthermore, the configurations disclosed in the following embodiments can be combined as appropriate. Various omissions, substitutions, or changes in the configuration can be made without departing from the scope of the present invention.

(Embodiment 1)
FIG. 1 is a perspective view of a chip-type electronic component according to the first embodiment. FIG. 2 is a cross-sectional view of the chip-type electronic component according to the first embodiment. FIG. 3 is an enlarged view of a terminal electrode included in the chip-type electronic component according to the first embodiment. In the present embodiment, the chip-type electronic component 10 is a ceramic capacitor, but is not limited to this. For example, the chip-type electronic component 10 may be an inductor element such as a varistor or a coil or a resistance element. In the present embodiment, the chip-type electronic component 10 includes six planes, more specifically, two planes (end faces) 13 and 14 that are arranged to face each other and have a substantially square shape in plan view. Although it has a rectangular parallelepiped shape having four flat surfaces (side surfaces) 12 that connect the end faces 13 and 14, the shape of the chip-type electronic component 10 is not limited to this.

  The chip-type electronic component 10 includes a ceramic body 11, internal electrodes 17 and 18, and terminal electrodes 20 and 30. The ceramic body 11 includes a dielectric 15. The internal electrodes 17 and 18 are disposed inside the ceramic body 11 and partly exposed on the surface of the ceramic body 11. More specifically, a part of the internal electrode 17 is exposed on the surface of the end face 13 of the ceramic body 11, and a part of the internal electrode 18 is exposed on the surface of the end face 14 of the ceramic body 11. The terminal electrodes 20 and 30 are disposed on the surface of the ceramic body 11. More specifically, the terminal electrode 20 is disposed on the surface of the end face 13 of the ceramic body 11 where the internal electrode 17 is exposed, and the terminal electrode 30 is formed of the ceramic body 11 where the internal electrode 18 is exposed. It is arranged on the surface of the end face 14.

  The longitudinal direction of the chip-type electronic component 10, that is, the direction orthogonal to the pair of end surfaces 13 and 14 is defined as the Y axis, and the axes orthogonal to the Y axis are defined as the X axis and the Z axis, respectively. The lengths of the sides of the end faces (terminal end faces) 20T, 30T of the terminal electrodes 20, 30 are La in the X-axis direction and Lb in the Z-axis direction. Since the end surfaces 13 and 14 of the chip type electronic component 10 have a substantially square shape, the terminal end surfaces 20T and 30T of the terminal electrodes 20 and 30 included in the chip type electronic component 10 also have a substantially square shape. In the present embodiment, since the terminal end faces 20T and 30T have a shape close to a square, La≈Lb. The length of the chip-type electronic component 10 in the Y-axis direction, that is, the length of the chip-type electronic component 10 in the longitudinal direction is Lc. Lc is the shortest distance between the pair of terminal end surfaces 20T and 30T.

  Since the chip-type electronic component 10 has a substantially rectangular parallelepiped shape as described above, the plan view (as viewed from the Z-axis or X-axis direction) has a rectangular shape (the shape of the side surface 12 is rectangular). For this reason, the chip-type electronic component 10 has a longitudinal direction (Y-axis direction) and a short direction (X-axis or Z-axis direction) in plan view. The chip-type electronic component 10 of this embodiment does not ask | require a dimension. Next, the internal structure of the chip-type electronic component 10 will be briefly described with reference to FIGS. FIG. 2 shows a cross section of the chip-type electronic component 10 taken along a plane orthogonal to the terminal end faces 20T, 30T of the terminal electrodes 20, 30 and the internal electrodes 17, 18.

A ceramic body 11 included in the chip-type electronic component 10 includes internal electrodes 17 and 18 and a dielectric 15 made of a dielectric material. The internal electrodes 17 and 18 are, for example, palladium (Pd), silver (Ag) / palladium alloy, nickel (Ni), copper (Cu), or the like. The dielectric 15 is, for example, barium titanate (BaTiO ₃ ). In the present embodiment, the ceramic body 11 is formed by alternately laminating dielectrics 15 and internal electrodes 17 and 18. In the present embodiment, the dielectric 15 corresponds to a dielectric layer.

  The ceramic body 11 is a rectangular parallelepiped obtained by heating a laminated body obtained by laminating a plurality of ceramic green sheets (unfired ceramic sheets) and bonding them by pressure bonding, cutting, degreasing, and firing. This is a sintered body. The ceramic body 11 has the chip-type electronic component 10 in which the terminal electrode 20 is electrically connected to the internal electrode 17 and the terminal electrode 30 is electrically connected to the internal electrode 18. The ceramic body 11 included in the chip-type electronic component 10 is not limited to the structure of the present embodiment as long as it has an internal electrode and an insulator.

  Internal electrodes 17 and 18 are exposed at the end faces 13 and 14 of the ceramic body 11, respectively. As described above, the pair of terminal electrodes 20 and 30 separately cover the end surfaces 13 and 14, respectively, and the plurality of internal electrodes 17 and 18 are electrically connected. Thus, the end surfaces 13 and 14 of the ceramic body 11 become terminal electrode formation surfaces on which the terminal electrodes 20 and 30 are formed. In the present embodiment, the terminal electrodes 20 and 30 have side surfaces (terminal side surfaces) 20S and 30S that are electrically connected to the terminal end surfaces 20T and 30T. The terminal side surfaces 20S and 30S extend from the terminal end surfaces 20T and 30T to at least one of the four side surfaces 12 of the ceramic body 11, and partially cover them. In this embodiment, the terminal side surfaces 20 </ b> S and 30 </ b> S extend to all four side surfaces 12 of the ceramic body 11. Next, the structure of the terminal electrodes 20 and 30 will be described.

  As shown in FIG. 2, the terminal electrodes 20 and 30 include first resin layers 21 and 31 and second resin layers 22 and 32. As shown in FIG. 3, the first resin layer 21 includes a first conductive material 41 and a first resin 51, and a surface on which the internal electrodes 17 and 18 of the ceramic body 11 are exposed, that is, a ceramic. The element body 11 is disposed on the end faces 13 and 14 side. The second resin layers 22 and 32 include the second resin 52 and are in contact with at least a part of the first resin layers 21 and 31 and have a Young's modulus lower than that of the first resin layers 21 and 31. .

  The terminal electrodes 20 and 30 electrically connect the internal electrodes 17 and 18 of the chip type electronic component 10 and the mounting portion of the circuit board. For this reason, the terminal electrodes 20 and 30 have conductivity. As will be described later, in the present embodiment, both the first resin layers 21 and 31 and the second resin layers 22 and 32 included in the terminal electrodes 20 and 30 have conductivity. The first resin layers 21 and 31 have conductivity by the first conductive material 41, and the second resin layers 22 and 32 have conductivity by the second conductive material 42, respectively.

  In the present embodiment, each of the first conductive material 41 and the second conductive material 42 may be one type or two or more types. For example, the first conductive material 41 or the second conductive material 42 may be a single type of particles obtained from a single type of material, or a plurality of types obtained from different types of materials. It may be a kind of particle. In the present embodiment, each of the first conductive material 41 and the second conductive material 42 is a metal, more specifically, a metal particle, but is not limited thereto. For example, the first conductive material 41 and the second conductive material 42 may be carbon particles or the like. The first conductive material 41 and the second conductive material 42 may be of the same type or different types. If the latter is used, the first resin layers 21 and 31 are used. The functions and characteristics necessary for the second resin layers 22 and 32 can be easily realized.

  In the present embodiment, the first conductive material 41 and the second conductive material 42 are both metal particles. More specifically, the first conductive material 41 is Cu particles, and the second conductive material 42 is particles in a form in which at least a part of the first particles 42A is coated with the coating material 42S. is there. In this example, the first particles 42A are Ni particles, and the coating material 42S is Sn (tin). However, the types and forms of the first conductive material 41 and the second conductive material 42 are not limited to those described above.

  The terminal electrodes 20 and 30 are electrically connected to the mounting portion of the circuit board by solder. At this time, a phenomenon called solder erosion in which Sn or the like contained in the solder enters the inside of the ceramic body 11 from the outside of the terminal electrodes 20 and 30 may occur. As described above, it is preferable that the first conductive material 41 and the second conductive material 42 contain Ni, since solder erosion can be suppressed. Moreover, when the 1st resin layers 21 and 31 contain Ni or Cu, the internal electrodes 17 and 18 and the 1st resin layers 21 and 31 can be connected more reliably, and reliability can be improved.

  In the present embodiment, the first resin layers 21 and 31 and the second resin layers 22 and 32 are both terminal electrodes 20 and 30. In the present embodiment, the first resin layers 21 and 31 are electrically connected to the internal electrodes 17 and 18, and the second resin layers 22 and 32 are electrically connected to the mounting portion of the circuit board. Therefore, the internal electrodes 17 and 18 are electrically connected to the mounting portion of the circuit board via the first resin layers 21 and 31 and the second resin layers 22 and 32. For this reason, both the first resin layers 21 and 31 and the second resin layers 22 and 32 need to be conductive. The first conductive material 41 and the second conductive material 42 preferably have a particle size of 1 μm or more and 10 μm or less. If it is this range, the 1st resin layers 21 and 31 and the 2nd resin layers 22 and 32 can have sufficient electroconductivity.

  The first resin 51 and the second resin 52 may be the same type or different types. In the present embodiment, the first resin 51 and the second resin 52 are the same type. By making the first resin 51 and the second resin 52 the same type, it is not necessary to prepare a plurality of resins, so that the manufacturing cost of the chip-type electronic component 10 can be reduced. Further, by making the first resin 51 and the second resin 52 different, the characteristics required for the first resin layers 21 and 31 and the characteristics required for the second resin layers 22 and 32 are realized. It becomes easy. In the present embodiment, the first resin 51 and the second resin 52 are epoxy resins. In the present embodiment, an epoxy resin having a curing temperature of about 100 ° C. to 200 ° C. is used. However, the first resin 51 and the second resin 52 are not limited to epoxy resins. For example, polyimide, phenol, or the like may be used for the first resin 51 and the second resin 52.

  In the first resin layers 21 and 31, the first conductive material 41 is dispersed in the first resin 51. In the second resin layers 22 and 32, the second conductive material 42 is dispersed in the second resin 52. For this reason, in this embodiment, all the 1st resin layers 21 and 31 and the 2nd resin layers 22 and 32 have electroconductivity. In the present embodiment, it is sufficient that at least the first resin layers 21 and 31 have conductivity, and the second resin layers 22 and 32 do not necessarily have conductivity. This point will be described in the following embodiments. The ratio of the first conductive material 41 to the total volume of the first resin layers 21 and 31 and the ratio of the second conductive material 42 to the total volume of the second resin layers 22 and 32 are 30% by volume. It is preferable that it is 60 volume% or less. If it is this range, the 1st resin layers 21 and 31 and the 2nd resin layers 22 and 32 can have sufficient electroconductivity.

  The chip-type electronic component 10 is in contact with the first resin layers 21 and 31 arranged on the ceramic body 11 side and the first resin layers 21 and 31 and is more ceramic than the first resin layers 21 and 31. It is mounted on the mounting portion of the circuit board via the terminal electrodes 20 and 30 including the second resin layers 22 and 32 disposed at positions away from the element body 11. Thus, the chip-type electronic component 10 includes the terminal electrodes 20 and 30 having the first resin layers 21 and 31 and the second resin layers 22 and 32 between the ceramic body 11 and the mounting portion of the circuit board. Intervene. As a result, the chip-type electronic component 10 has the external (mechanical) stress transmitted from the circuit board to the chip-type electronic component 10 and the two terminal electrodes 20 and 30 fixed the ceramic body 11 to the circuit board. The thermal stress generated when the chip-type electronic component 10 generates heat in this state is relaxed by the terminal electrodes 20 and 30. And since the chip-type electronic component 10 can suppress the generation of cracks in the ceramic body 11 or the terminal electrodes 20 and 30, a decrease in durability is suppressed.

  The terminal electrodes 20, 30 are provided with the first resin layers 21, 31 on the end faces 13, 14 of the ceramic body 11 and are electrically connected to the internal electrodes 17, 18. Further, the terminal electrodes 20 and 30 cover the surface of the ceramic body 11 from which the internal electrodes 17 and 18 are exposed, that is, the end surfaces 13 and 14. Therefore, in the present embodiment, the first resin layers 21 and 31 that are disposed on the ceramic body 11 side and are electrically connected to the internal electrodes 17 and 18 have a function of reliably connecting to the internal electrodes 17 and 18. In addition, a function to firmly adhere to the surface of the ceramic body 11 is required. Therefore, in the present embodiment, the first resin layers 21 and 31 have a high Young's modulus and a high hardness.

  Even when the Young's modulus of the first resin layers 21 and 31 is high and the hardness is high, when the chip type electronic component 10 is mounted on the circuit board, mechanical stress from the outside and the chip type electronic component 10 In order to effectively relieve thermal stress, the terminal electrodes 20 and 30 include second resin layers 22 and 32 having a Young's modulus lower than that of the first resin layers 21 and 31. That is, the terminal electrodes 20 and 30 of the chip-type electronic component 10 are at least part of the first resin layers 21 and 31 at positions farther from the surface of the chip-type electronic component 10 than the first resin layers 21 and 31. And the second resin layers 22 and 32 having a lower Young's modulus and lower hardness than the first resin layers 21 and 31. The second resin layers 22 and 32 are electrically connected to terminals of the circuit board by solder or the like. With such a structure, the chip-type electronic component 10 can more effectively relieve external mechanical stress and thermal stress, and the terminal electrodes 20, 30 and the internal electrodes 17, 18 and the end face 13, 14 is securely connected.

  As described above, the chip type electronic component 10 has the first resin layers 21 and 31 whose Young's modulus is larger than that of the second resin layers 22 and 32, and the internal electrodes 17 and 18 and the end face 13 of the chip type electronic component 10. 14 is firmly connected to each other and securely connected thereto. The second resin layers 22 and 32 that are in contact with the first resin layers 21 and 31 and have a Young's modulus lower than that of the first resin layers 21 and 31 are caused by external (mechanical) stresses and chips. The thermal stress caused by the heat generation of the mold electronic component 10 is more effectively and reliably reduced.

  Further, the chip-type electronic component 10 mounted on the circuit board may generate a sound due to an electrostriction phenomenon generated in the dielectric 15 or a crack may occur in the ceramic body 11. Since the terminal electrodes 20 and 30 have the first resin layers 21 and 31 and the second resin layers 22 and 32, the deformation of the chip-type electronic component 10 due to electrostriction phenomenon is absorbed, and the sound and cracks are absorbed. Can also be suppressed. In particular, since the terminal electrodes 20 and 30 have the second resin layers 22 and 32 whose Young's modulus is lower than that of the first resin layers 21 and 31, they absorb the deformation of the chip-type electronic component 10 due to the electrostriction phenomenon. The sound and cracks can be more effectively and reliably suppressed. Thus, when the chip-type electronic component 10 has the dielectric 15, the terminal electrodes 20, 30 including the first resin layers 21, 31 and the second resin layers 22, 32 generate sound and cracks. There is an advantage that it can be suppressed. The chip-type electronic component 10 may not have the dielectric 15, and in this case, the effect that the terminal electrodes 20 and 30 relieve external stress and thermal stress can be obtained.

  In the present embodiment, the Young's modulus of the first resin layers 21 and 31 is higher than the Young's modulus of the second resin layers 22 and 32, and preferably 2 GPa or more and 6 GPa or less. The Young's modulus of the second resin layers 22 and 32 is preferably 0.1 GPa or more and 3 GPa or less, and particularly preferably 1 GPa or less. By setting the Young's modulus of the first resin layers 21 and 31 and the Young's modulus of the second resin layers 22 and 32 within the above-described ranges, the first resin layers 21 and 31 and the internal electrode of the chip-type electronic component 10 17 and 18 and the end surfaces 13 and 14 can be brought into close contact with each other, and external stress and thermal stress acting on the chip-type electronic component 10 can be reliably relaxed. Further, the first resin layers 21 and 31 and the second resin layers 22 and 32 of the chip-type electronic component 10 can also suppress noise and cracks due to the electrostriction phenomenon of the dielectric 15.

  In order to make the Young's modulus of the second resin layers 22 and 32 smaller than the Young's modulus of the first resin layers 21 and 31, for example, the terminal electrodes 20 and 30 are formed on the end surfaces 13 and 14 of the ceramic body 11. In this case, there is a method in which the heat treatment of the first resin layers 21 and 31 is different from the heat treatment of the second resin layers 22 and 32. For example, when an epoxy resin is used for the first resin 51 included in the first resin layers 21, 31 and the second resin 52 included in the second resin layers 22, 32, the thermosetting time of the second resin 52 is increased. There is a method of making it shorter than the thermosetting time of the first resin 51. There is also a method in which the thermosetting temperature of the second resin 52 is made lower than the thermosetting temperature of the first resin 51. In addition to different heat treatments, the content of the first conductive material 41 included in the first resin layers 21 and 31 and the content of the second conductive material 42 included in the second resin layers 22 and 32 are included. There is also a way to vary the amount. For example, the volume ratio of the second conductive material 42 to the total volume of the second resin layers 22 and 32 is set to be larger than the volume ratio of the first conductive material 41 to the total volume of the first resin layers 21 and 31. Make it smaller. Further, there are methods in which the type of the first resin 51 and the type of the second resin 52 are made different, or the resin component ratios are made different between the first resin 51 and the second resin 52. By using the methods described above alone or in combination, the Young's modulus of the second resin layers 22 and 32 can be made lower than the Young's modulus of the first resin layers 21 and 31.

  Since the first resin layers 21 and 31 having a higher Young's modulus are firmly fixed to and cover the entire end surfaces 13 and 14 of the ceramic body 11, the strength of the end surfaces 13 and 14 is improved. Further, the first resin layers 21 and 31 effectively suppress the penetration of the plating solution or the like into the ceramic body 11. In this embodiment, it is preferable that the 1st resin layers 21 and 31 and the 2nd resin layers 31 and 32 do not have a glass frit. In this way, the conductivity of the first resin layers 21 and 31 and the second resin layers 31 and 32 is improved, so that the equivalent series resistance (ESR) of the terminal electrodes 20 and 30 is increased. Can be suppressed. Moreover, the terminal electrodes 20 and 30 do not need to provide the baking layer containing glass and an electroconductive material in the end surfaces 13 and 14 which the internal electrodes 17 and 18 expose. Since the baking layer is not necessary, heating at a high temperature for forming the baking layer is not necessary. As a result, the chip electronic component 10 can reduce cracks generated by the terminal electrodes 20 and 30.

(Modification of terminal electrode)
4 and 5 are enlarged views showing modifications of the terminal electrodes included in the chip-type electronic component according to the first embodiment. The terminal electrodes 20a and 30a and the terminal electrodes 20b and 30b according to this modification are the same as the terminal electrodes 20 and 30 described above, but the first conductive material 41a and the first conductive material 41a and the first resin layer 21a and 31a have. The second conductive material 42a included in the second resin layers 22a and 32a or the second conductive material 42b included in the second resin layers 22b and 32b is different. The first conductive material 41a includes first conductive particles 41A and second conductive particles 41B having a particle size smaller than that of the first conductive particles 41A. The particle diameter of the first conductive particle 41A is d1, and the particle diameter of the second conductive particle 41B is d2. The particle diameters d1 and d2 were obtained from SEM (Scanning Electron Microscope) images of the first conductive particles 41A and the second conductive particles 41B included in the first resin layers 21a and 31a. An average particle diameter may be used. For example, the average particle diameter is obtained from the particle diameters of the plurality of first conductive particles 41A (or second conductive particles 41B) appearing in the SEM image picked up by polishing the first resin layers 21a and 31a. . The method for obtaining the average particle diameter from the SEM image of the first conductive particles 41A and the like is not limited to this. For example, a straight line having a known width and length may be drawn on the SEM image of the first conductive particle 41A and the like, and the average particle diameter may be obtained from the first conductive particle 41A and the like included in the straight line.

  By doing in this way, the 2nd electroconductive particle 41B with a particle size smaller than the 1st electroconductive particle 41A fuse | melts at a temperature lower than the 1st electroconductive particle 41A. When the first resin 51 included in the first resin layers 21a and 31a is thermally cured, the second resin is heated at a temperature lower than the temperature at which the first conductive particles 41A are melted (about 100 ° C. to 150 ° C.). The conductive particles 41B are melted, and the first conductive particles 41A and the first conductive particles 41A and the internal electrodes 17 and 18 are electrically connected. That is, in the first resin layers 21a and 31a after thermosetting, the internal electrodes 17 and 18 and the first conductive particles 41A are electrically connected via the second conductive particles 41B, and The first conductive particles 41A are electrically connected to each other. With such a structure, the conductivity between the first resin layers 21a and 31a and the internal electrodes 17 and 18 is ensured. In addition, the first resin layers 21a and 31a are configured so that the first conductive particles 41A realize a reduction in contact resistance, and the first resin layers 21a and 31a reduce the shrinkage of the first resin layers 21a and 31a. Cracks generated in 21a and 31a are alleviated. Further, in the first resin layers 21a and 31a, the first conductive particles 41A improve the adhesion with the second resin layers 22a and 32a.

  The particle diameter d1 of the first conductive particles 41A is 1 μm or more and 10 μm or less, and the particle diameter d2 of the second conductive particles 41B is preferably 0.5 μm or less, more preferably 0.1 μm or less. preferable. By doing so, when the first resin 51 is thermally cured, the second conductive particles 41B are surely melted, and the first conductive particles 41A and the internal electrodes 17 and 18 are connected to the first conductive particles 41B. The electrical connection with the conductive particles 41A can be realized with certainty. In addition, by setting the particle diameter d1 and the particle diameter d2 in the above ranges, cracks generated in the first resin layers 21a and 31a can be more effectively mitigated, and the first resin layers 21a and 31a and the second resin layers 21a and 31a can be reduced. Adhesiveness with the resin layers 22a and 32a can be further improved. Further, by setting the particle diameter d1 of the first conductive particles 41A within the above-described range, the effect of reducing the contact resistance between the first conductive particles 41A and the shrinkage of the first resin 51 are suppressed. The effect of relaxing the stress acting on the first resin layers 21a and 31a and suppressing the occurrence of cracks can be obtained more reliably. Furthermore, the adhesiveness with the 2nd resin layers 22a and 32a and the ceramic element | base_body 11 can be improved more by making the particle size d1 of 41 A of 1st electroconductive particle into the range mentioned above. In this modification, the first conductive particles 41A are Ni and the second conductive particles 41B are Cu, but both may be the same material (for example, Cu).

  The particle diameter d2 of the second conductive particles 41B is preferably smaller than the thickness t of the internal electrodes 17 and 18. By doing in this way, the 2nd electroconductive material 42a connects the internal electrodes 17 and 18 and 41 A of 1st electroconductive particles more reliably, and ensures the electrical conductivity between both more reliably. Can do. The particle diameter d1 of the first conductive particles 41A is preferably larger than the thickness t of the internal electrodes 17 and 18. By doing in this way, the 1st electroconductive particle 41A reduces the contact resistance of 1st electroconductive particle 41A more reliably, and also suppresses shrinkage | contraction of 1st resin layer 21a, 31a more reliably. And the crack of the 1st resin layers 21a and 31a can be relieved more effectively. Further, the first conductive particles 41A can further improve the adhesion strength between the first resin layers 21a and 31a and the ceramic body 11 and the second resin layers 22a and 32a, thereby further improving the adhesion. it can.

  In the present modification, the second conductive material 42a includes first particles 42A, second particles 42B, and third particles 42C as the particles of the second conductive material 42a. In the present modification, the first particle 42A, the second particle 42B, and the third particle 42C are Ni, Cu, and Sn, respectively, in order. Further, the second resin layers 22b and 32b of the terminal electrodes 20b and 30b shown in FIG. 5 include the first particles 42A and the second particles 42B as the particles of the second conductive material 42b. The first particles 42A and the second particles 42B are Sn and Cu, respectively, in order. Thus, in the present modification, the first particle 42A, the second particle 42B, and the third particle 42C are three different types of materials, but the third first particle 42A and the second particle shown in FIG. Two different types of materials, such as 42B, may be used. Furthermore, the particles of the second conductive materials 42a and 42b may be particles of the same material, or may be particles of four or more different materials.

  The average particle diameter of the first conductive particles 41A included in the first resin layers 21a and 31a and the average particle diameter of the second conductive particles 41B are the second included in the second resin layers 22a and 32a. It is preferable that the average particle size of the particles of the conductive material 42a is smaller than the average particle size of the particles of the second conductive material 42b included in the second resin layers 22b and 32b. By doing in this way, the electroconductivity with the 1st resin layers 21a and 31a and the internal electrodes 17 and 18 can further be improved. Further, the fixing strength between the first resin layers 21a and 31a and the second resin layers 22a and 32a or the second resin layers 22b and 32b can be further improved. In the present embodiment, the average particle diameter of the first conductive particles 41A, the average particle diameter of the second conductive particles 41B, and the average particle diameter of the particles of the second conductive materials 42a and 42b are the first conductive particles. It was determined from SEM image observation of the conductive particles 41A and the second conductive particles 41B.

(Chip type electronic component manufacturing method)
FIG. 6 is a flowchart of the method for manufacturing the chip-type electronic component according to the first embodiment. 7A to 7D are explanatory diagrams of the method for manufacturing the chip-type electronic component according to the first embodiment. Here, an example of a method for manufacturing the chip-type electronic component 10 shown in FIG. 2 will be described. In manufacturing the chip-type electronic component 10, in step S11, the ceramic body 11 having the lead portions 17L and 18L where the internal electrodes 17 and 18 are partially exposed on the surface is prepared. As illustrated in FIG. 7A, the lead portions 17L and 18L are drawn to the end faces 13 and 14 of the ceramic body 11.

  Next, it progresses to the 1st resin layer formation process shown by step S12. In the first resin layer forming step, as shown in FIG. 7B, the first resin 51 is formed on the surfaces where the drawn portions 17L and 18L and the drawn portions 17L and 18L of the ceramic body 11 are exposed, that is, on the end surfaces 13 and 14. In this step, the first resin layers 21 and 31 are formed by applying and curing the first mixture 21P and 31P including the first conductive material 41 and the first conductive material 41. Next, the first resin layer forming step will be described in more detail. In the first resin layer forming step, as shown in FIG. 7B, first, the first conductive material 41 is dispersed in the liquid first resin 51 on the end faces 13 and 14 of the ceramic body 11. The paste-like first mixtures 21P and 31P are applied by, for example, the dipping method (step S121).

  Next, the first mixtures 21P and 31P are cured by heat treatment (first heat treatment) (step S122). In this embodiment, since the 1st resin 51 uses thermosetting resin like an epoxy resin, for example, it hardens | cures by heating the 1st mixtures 21P and 31P. When the first resin layers 21 and 31 are formed on the end faces 13 and 14 of the ceramic body 11 by the first heat treatment in step S122, the first resin layer forming process in step S12 is completed.

  Next, it progresses to the 2nd resin layer formation process shown by step S12. In the second resin layer forming step, as shown in FIG. 7-3, the second mixture 22P including the second resin 52 and the second conductive material 42 on the surface of the first resin layers 21 and 31, In this step, the second resin layers 22 and 32 are formed by applying and curing 32P. Next, the second resin layer forming step will be described in more detail. In the second resin layer forming step, as shown in FIG. 7C, first, the second conductive material 42 is dispersed in the liquid second resin 52 on the surfaces of the first resin layers 21 and 31. The pasty second mixtures 22P and 32P are applied by, for example, the dipping method or the like (step S131).

  Next, the second mixture 21P, 32P is cured by heat treatment (second heat treatment) (step S132). In the present embodiment, since the second resin 52 uses a thermosetting resin such as an epoxy resin, for example, similarly to the first resin 51, the second mixture 22P and 32P are cured by heating. In the present embodiment, in the first resin layer forming step (step S12) and the second resin layer forming step (step S13), the second resin layer 22, It heat-processes so that the Young's modulus of 32 may become small.

  For example, in the second resin layer forming step, more specifically, the time for heating the second mixture 22P, 32P in the second heat treatment (step S132), the first resin layer forming step, more specifically, In the first heat treatment (step S122), the time is shorter than the time for heating the first mixture 21P, 31P. In this way, since the first resin layers 21 and 31 are more cured, the Young's modulus of the second resin layers 22 and 32 can be relatively lowered. In addition, the second resin layer forming step, more specifically, the temperature at which the second mixture 22P, 32P is heated in the second heat treatment (step S132) is set to the first resin layer forming step, more specifically, In the first heat treatment (step S122), the temperature may be lower than the temperature at which the first mixture 21P, 31P is heated. Even in this case, since the first resin layers 21 and 31 are more cured, the Young's modulus of the second resin layers 22 and 32 can be relatively lowered. Thus, since the manufacturing method for the chip-type electronic component according to the present embodiment changes the heat treatment conditions, the Young's modulus of the second resin layers 22 and 32 can be lowered relatively easily and reliably. Can do.

  7-4, when the second resin layers 22 and 32 are formed on the surfaces of the first resin layers 21 and 31, chip-type electrons having the terminal electrodes 20 and 30 on the surface of the ceramic body 11 are formed. The part 10 is completed. In the present embodiment, the Young's modulus of the second resin layers 22 and 32 is made lower than the Young's modulus of the first resin layers 21 and 31 by adjusting the conditions of the first heat treatment and the second heat treatment. Therefore, the Young's modulus of the second resin layers 22 and 32 and the first resin layers 21 and 31 can be adjusted relatively easily. The Young's modulus of the second resin layers 22 and 32 and the first resin layers 21 and 31 is, for example, the types of the first resin 51 and the second resin 52 and the first conductive material 41 and the second conductive material. It may be adjusted by changing the type of the conductive material 42, adjusting the ratio of the first resin 51 and the first conductive material 41, or using these together with heat treatment.

  As described above, the chip-type electronic component according to the present embodiment includes the terminal electrode having the first resin layer and the second resin layer. For this reason, since the first resin layer and the second resin layer can effectively relieve external stress and thermal stress, generation of cracks in the ceramic body or terminal electrode due to external stress and thermal stress. Can be suppressed. The configuration of the present embodiment can also be applied as appropriate in the following embodiments. Moreover, what has the structure of this embodiment has the effect | action and effect similar to this embodiment.

(Embodiment 2)
FIG. 8 is a cross-sectional view of the chip-type electronic component according to the second embodiment. FIG. 9 is an enlarged view of a terminal electrode included in the chip-type electronic component according to the second embodiment. The chip-type electronic component 10A according to the second embodiment is the same as the chip-type electronic component 10 according to the first embodiment, but has a plating layer 33 that covers the surfaces of the second resin layers 22 and 32, and the second The resin layers 22 and 32 cover the surfaces of the first resin layers 21 and 31 while leaving a part of them, and a part of the first resin layers 21 and 31 and a part of the plating layer are in contact with each other. Different.

  The terminal electrodes 20A, 30A of the chip type electronic component 10A include first resin layers 21, 31, second resin layers 22c, 32c, and plating layers 23, 33. The first resin layers 21 and 31 are the same as the first resin layers 21 and 31 included in the chip-type electronic component 10 of the first embodiment. The second resin layers 22c and 32c included in the chip-type electronic component 10A include a second resin 52 and a second conductive material 42c. The second resin layers 22c and 32c cover the first resin layers 21 and 31 while leaving a part of the first resin layers 21 and 31. The plating layer 33 is disposed at a position farther from the ceramic body 11 than the second resin layers 22c and 32c, covers the second resin layers 22c and 32c, and is formed on the first resin layers 21 and 31. Contact with some. That is, the plating layers 23 and 33 are in contact with and cover portions of the first resin layers 21 and 31 that are not covered by the second resin layers 22c and 32c.

  The plating layers 23 and 33 are Sn plating or Ni-Sn plating. The terminal electrodes 20A and 30A have the plating layers 23 and 33 of such a material, so that the wettability with the solder is improved when the terminal electrodes 20A and 30A are mounted on the circuit board. As a result, the terminal electrodes 20A and 30A are reliably connected to the terminal electrodes of the circuit board, so that the reliability is improved. In addition, when the plating layers 23 and 33 are formed by Sn plating, the plating layers 23 and 33 are one layer. When the plating layers 23 and 33 are formed by Ni—Sn plating, the plating layers 23 and 33 are two plating layers in which the Sn plating layer is provided on the surface of the Ni plating layer.

  The plating layers 23 and 33 are provided on the surfaces of the second resin layers 22c and 32c. Since the plating layers 23 and 33 are provided by electrolytic plating, the second resin layers 22c and 32c need to be conductive. Therefore, the second resin layers 22c and 32c are ensured of conductivity by dispersing the second conductive material 42c in the second resin 52, as shown in FIG. In the present embodiment, the second conductive material 42c is a metal particle, and in this embodiment is Cu. The first conductive material 41 included in the first resin layers 21 and 31 is also a metal particle, which is Cu in this embodiment. Since the first resin layers 21 and 31 and the second resin layers 22c and 32c only have to be conductive, the types of the first conductive material 41 and the second conductive material 42c and The form is not limited to that described above. For example, the first conductive material 41, 41a or the second conductive material 42, 42a, 42b or the like according to the first embodiment described above or its modification is applied to the terminal electrodes 20A, 20B of the chip electronic component 10A. May be. In this case, the operation and effect of the above-described first embodiment or its modification can be obtained. In particular, the first conductive materials 41 and 41a and the second conductive materials 42, 42a, 42b, and 42c are preferably Ni except for Cu.

  In general, a conductive resin has a larger electric resistance than a conductor. In the present embodiment, the terminal electrodes 20A and 30A are formed by laminating first resin layers 21 and 31 having conductivity and second resin layers 22c and 32c having the same conductivity. For this reason, the terminal electrodes 20A and 30A tend to increase the equivalent series resistance. In particular, in the present embodiment, the second resin layers 22c and 32c have a lower Young's modulus than the first resin layers 21 and 31, so the second resin layers 22c and 32c are the first resin layers. There is a tendency that the electrical resistance is higher than those of 21 and 31. As a result, there is a large tendency for the equivalent series resistance of the terminal electrodes 20A and 30A to increase.

  For this reason, in the present embodiment, the second resin layers 22c and 32c cover the first resin layers 21 and 31 while leaving a part thereof. At the same time, the plated layers 23 and 33 are exposed to the first resin layers 21 and 31 exposed from the second resin layers 22c and 32c (that is, the first resin layers 21 and 31 not covered with the second resin layer 22). And the second resin layers 22c and 32c. With such a structure, the chip-type electronic component 10A is electrically connected to the plating layers 23 and 33 and the first resin layers 21 and 31, and therefore has a low conductivity (that is, a high electrical resistance). Decrease in conductivity of the terminal electrodes 20A and 30A due to the resin layers 21 and 31 can be suppressed. As a result, the chip-type electronic component 10A can suppress an increase in the equivalent series resistance of the terminal electrodes 20A and 20B. Thus, the structure of the terminal electrodes 20A and 30A is suitable for a structure having two conductive resin layers and a metal plating layer as the outermost layer.

  When the chip-type electronic component 10A is mounted on the circuit board, the plating layers 23 and 33 are electrically connected to the terminals of the circuit board. In this case, the chip-type electronic component 10 </ b> A has an internal electrode through the first resin layers 21 and 31 and the plating layers 23 and 33 having higher conductivity (that is, lower electrical resistance) than the second resin layers 22 c and 32 c. 17 and 18 are electrically connected to the terminals of the circuit board. That is, the chip-type electronic component 10A can electrically connect the internal electrodes 17 and 18 to the terminals of the circuit board without using the second resin layers 22c and 23c having low conductivity. As a result, the internal electrodes 17 and 18 of the chip-type electronic component 10A and the terminals of the circuit board are electrically connected with low resistance. In the chip-type electronic component 10A, the plating layers 23 and 33 are electrically connected to the terminals of the circuit board, so that the wettability between the solder and the terminal electrodes 20A and 30A is improved. As a result, the reliability of the chip-type electronic component 10A when mounted on the circuit board is improved.

  In the present embodiment, a third resin layer containing a third conductive material may be used instead of the plating layers 23 and 33 included in the terminal electrodes 20A and 30A of the chip-type electronic component 10A. In this case, the third resin layer, the first resin layers 21 and 31, and a part thereof are electrically connected. The third resin layer can be formed by applying a resin containing a third conductive material to the surfaces of the first resin layers 21 and 31 and then curing the resin by heating. For this reason, since the second resin layers 22c and 32c do not need to have conductivity, the second resin layers 22c and 32c may not include the second conductive material 42c. When the third resin layer is used instead of the plating layers 23 and 33, the third resin layer preferably includes Sn because the third resin layer is electrically connected to the terminal of the circuit board. In this way, the wettability between the solder and the third resin layer is improved, so that the reliability of connection between the terminal electrodes 20A, 30A and the terminals of the circuit board is improved.

(Modification of terminal electrode)
FIG. 10 is an enlarged view showing a first modification of the terminal electrode included in the chip-type electronic component according to the second embodiment. The terminal electrodes 20Aa and 30Aa according to this modification are the same as the terminal electrodes 20A and 30A described above, but the second conductive material 42b included in the second resin layers 22b and 32b is the same as the terminal electrodes 20A and 20A described above. Different from 30A. In the present modification, the second resin layers 22b and 32b are the same as the modification of the first embodiment described above (see FIG. 5). That is, the second resin layers 22b and 32b include the first particles 42A and the second particles 42B as the particles of the second conductive material 42b. The first particles 42A are Ni particles, and the second particles 42B are Cu particles. The plating layers 23 and 33 cover the surfaces of the second resin layers 22b and 32b.

  FIG. 11 is an enlarged view showing a second modification of the terminal electrode included in the chip-type electronic component according to the second embodiment. The terminal electrodes 20Ab and 30Ab according to this modification are the same as the terminal electrodes 20A and 30A described above, but the second conductive material 42d included in the second resin layers 22d and 32d is the terminal electrode 20A described above. Different from 30A. In the present modification, the second conductive material 42d included in the second resin layers 22d and 32d is a particle in a form in which at least a part of the first particle 42A is coated with the coating material 42S. The plating layers 23 and 33 cover the surfaces of the second resin layers 22d and 32d. In this example, the first particles 42A are Ni particles, and the coating material 42S is Cu. However, the types of the first particles 42A and the coating material 42S are not limited to those described above.

(Chip type electronic component manufacturing method)
FIG. 12 is a flowchart of the method for manufacturing the chip-type electronic component according to the second embodiment. FIGS. 13-1 to 13-6 are explanatory diagrams of the method for manufacturing the chip-type electronic component according to the second embodiment. Here, an example of a method for manufacturing the chip-type electronic component 10A shown in FIG. 8 will be described. In manufacturing the chip-type electronic component 10A, step S21 and step S22 (FIGS. 13-1 and 13-2) are the same as step S11 and step S12 described in the first embodiment, and thus description thereof is omitted. If the 1st resin layer formation process of Step S22 is completed and the 1st resin layers 21 and 31 are formed in the surface of ceramic body 11, it will progress to Step S23.

  Step S23 is a first resin layer coating step. The first resin layer covering step is a step in which a part of the first resin layers 21 and 31 are covered with the covering material MS. This is because a part of the first resin layers 21 and 31 are not covered with the second resin layers 22 and 32 and the plating layers 23 and 33 and a part of the first resin layers 21 and 31 are electrically connected. It is for making it connect. In the present embodiment, as shown in FIG. 13C, one of the first resin layers 21, 31 is extended from the boundary between the first resin layers 21, 31 and the side surface 12 to the middle part toward the end surfaces 13, 14. The part is covered with the covering material MS. The covering material MS is, for example, a resin such as a resist. When part of the first resin layers 21 and 31 is covered with the covering material MS, the process proceeds to the second resin layer forming step shown in step S24.

  The second resin layer forming step of step S24 is the same as the second resin layer forming step of step S13 described in the first embodiment, but as shown in FIG. 13-4, the first resin layers 21, 31 and The second mixture 22P, 32P is applied to the surface of the covering material MS. Further, the second mixtures 22P and 32P include the second conductive material 42c shown in FIG. Others are the same as in the first embodiment. If the 2nd resin layer formation process of step S24 is complete | finished and the 2nd resin layers 22 and 32 are formed in the surface of the 1st resin layers 21 and 31 and the coating | covering material MS, it will progress to step S25. Step S25 is a covering material removing step. The covering material removing step is a step in which the covering material MS is removed. When the coating material MS is a resin such as a resist, the coating material MS is removed using a solvent that dissolves the coating material MS.

  When the covering material MS is removed, as shown in FIG. 13-5, the first resin layer extends from the boundary between the first resin layers 21 and 31 and the side surface 12 to the middle portion toward the end surfaces 13 and 14. 21 and 31 are not covered with the second resin layers 22 and 32. When the covering material MS is removed, the process proceeds to step S26, and plating layers 23 and 33 are formed on part of the surfaces of the first resin layers 21 and 31 and on the surfaces of the second resin layers 22 and 32. For the plating layers 23 and 33, for example, electrolytic plating is used. In this way, as shown in FIG. 13-6, the chip-type electronic component 10A having the terminal electrodes 20A and 30A on the surface of the ceramic body 11 is completed. Even when the coating material MS is not used, by immersing the first resin layers 21 and 31 of the ceramic body 11 in the paste-like second mixture 22P and 32P, by adjusting the immersion depth, The first resin layers 21 and 31 may be partially exposed.

  In this embodiment, the Young's modulus of the first resin layers 21 and 31 is higher than the Young's modulus of the second resin layers 22 and 32 by adjusting the conditions of the first heat treatment and the second heat treatment. ing. For this reason, the first resin layers 21 and 31 having high hardness are firmly adhered to the end faces 13 and 14 of the ceramic body 11. For this reason, when forming the plating layers 23 and 33, the possibility that the plating solution may enter the ceramic body 11 can be reduced. As a result, the chip-type electronic component manufacturing method according to the present embodiment can improve the reliability of the chip-type electronic component 10 </ b> A having the plating layers 23 and 33. Moreover, since the 2nd resin layers 22 and 32 have the 2nd electroconductive material 42c shown in FIG. 9, the plating layers 23 and 33 can be formed using electrolytic plating.

  Before the plating layers 23 and 33 are formed, the second resin layers 22 and 32 may be polished so that the plating layers 23 and 33 can be reliably formed. Since the Young's modulus of the second resin layers 22 and 32 is lower than the Young's modulus of the first resin layers 21 and 31 in the chip-type electronic component 10A, polishing before forming the plating layers 23 and 33 is easy and This can be performed reliably, and the time required for polishing can be shortened to improve productivity.

  As described above, since the chip-type electronic component according to the present embodiment has the first resin layer and the second resin layer, the same functions and effects as the chip-type electronic component according to Embodiment 1 are exhibited. Furthermore, the chip-type electronic component according to the present embodiment includes a plating layer that is electrically connected to a part of the first resin layer and the second resin layer. This plating layer improves the reliability when the chip-type electronic component is mounted on the circuit board. In addition, since the first resin layer having high conductivity and the plating layer are electrically connected, the equivalent series resistance of the terminal electrode is reduced. The configuration of the present embodiment can also be applied as appropriate in the following embodiments. Moreover, what has the structure of this embodiment has the effect | action and effect similar to this embodiment.

(Embodiment 3)
FIG. 14 is a cross-sectional view of the chip-type electronic component according to the third embodiment. The chip-type electronic component 10B according to the third embodiment is the same as the chip-type electronic component 10 according to the first embodiment, except that a baking layer 20G, between the first resin layers 21 and 31 and the ceramic body 11 is provided. The difference is that it has 30G. Other structures are the same as those of the first embodiment. The terminal electrodes 20B and 30B included in the chip-type electronic component 10B include baking layers 20G and 30G, first resin layers 21 and 31, and second resin layers 22 and 32. In the present embodiment, the second resin layers 22 and 32 cover the entire surface of the first resin layers 21 and 31 and come into contact therewith.

  The baking layers 20G and 30G are provided on the surface of the ceramic body 11 where the internal electrodes 17 and 18 are exposed, that is, on the end surfaces 13 and 14, and are electrically connected to the internal electrodes 17 and 18. For the baking layers 20G and 30G, for example, a paste in which glass frit and particles of a conductive material (for example, metal such as Cu or Ni) are mixed is applied to the end faces 13 and 14 and fired at a temperature of about 850 ° C. It is formed by.

  First resin layers 21 and 31 and second resin layers 22 and 32 are formed in this order on the surfaces of the baking layers 20G and 30G. Thus, between the first resin layers 21 and 31 and the ceramic body 11, layers different from the first resin layers 21 and 31 (baked layers 20G and 30G in this embodiment) are arranged. May be. The second resin layers 22 and 32 may cover all of the first resin layers 21 and 31, or may cover a part of them. In the chip-type electronic component 10B, the second resin layers 22 and 32 are electrically connected to the terminals of the circuit board. For this reason, it is preferable that the 2nd resin layers 22 and 32 contain Sn as a 2nd electroconductive material. In this way, the wettability with the solder is improved, so that the reliability of electrical connection between the terminal electrodes 20B and 30B and the terminals of the circuit board is improved.

  The chip-type electronic component 10B includes terminal electrodes 20B and 30B in which first resin layers 21 and 31 and second resin layers 22 and 32 are formed on the surfaces of the baking layers 20G and 30G. Therefore, in the chip-type electronic component 10B, as in the chip-type electronic component 10 of the first embodiment, the first resin layers 21 and 31 and the second resin layers 22 and 32 have the external stress from the circuit board and the chip. The thermal stress caused by the heat generation of the mold electronic component 10 is relieved to suppress the generation of cracks and to suppress the noise. In particular, since the Young's modulus of the second resin layers 22 and 32 is lower than the Young's modulus of the first resin layers 21 and 31, external stress and thermal stress can be effectively relieved. The configuration of the present embodiment can also be applied as appropriate in the following embodiments. Moreover, what has the structure of this embodiment has the effect | action and effect similar to this embodiment.

(Embodiment 4)
FIG. 15 is a cross-sectional view of the chip-type electronic component according to the fourth embodiment. The chip-type electronic component 10C according to the fourth embodiment is the same as the chip-type electronic component 10 according to the first embodiment, but the third electronic component 10C according to the fourth embodiment is located at a position farther from the ceramic body 11 than the second resin layers 22 and 32. The resin layers 24 and 34 are different. Other structures are the same as those of the first embodiment. The terminal electrodes 20C and 30C included in the chip-type electronic component 10C include first resin layers 21 and 31, second resin layers 22 and 32, and third resin layers 24 and 34. In the present embodiment, the second resin layers 22 and 32 cover the entire surface of the first resin layers 21 and 31 and come into contact therewith.

  The third resin layers 24 and 34 are provided on the surfaces of the second resin layers 22 and 32. The third resin layers 24 and 34 include a third resin and a third conductive material. Further, the second resin layers 22 and 32 include a second conductive material in order to electrically connect the first resin layers 21 and 31 and the third resin layers 24 and 34.

  As the third resin, the same resin as the resin of the first resin layers 21 and 31 or the second resin layers 22 and 32 can be used. In this embodiment, since the 3rd resin layers 24 and 34 are joined with the terminal of a circuit board with solder, it is preferable that Sn is included at least. The third resin layers 24 and 34 can be formed in the same manner as the first resin layers 21 and 31 and the second resin layers 22 and 32. The Young's modulus of the third resin layers 24 and 34 is not particularly limited. For example, if the Young's modulus of the third resin layers 24 and 34 is larger than the Young's modulus of the second resin layers 22 and 32, the outermost layers of the terminal electrodes 20C and 30C are formed. The damage etc. of the 3rd resin layers 24 and 34 arrange | positioned can be reduced.

  The chip-type electronic component 10C further includes third resin layers 24 and 34 as compared with the chip-type electronic component 10 (see FIG. 2) of the first embodiment. For this reason, the chip-type electronic component 10C suppresses the occurrence of cracks by relaxing the external stress from the circuit board and the thermal stress caused by the heat generation of the chip-type electronic component 10 than the chip-type electronic component 10 of the first embodiment. The effect which suppresses and sound generation is high. Further, if the Young's modulus of the third resin layers 24 and 34 is made lower than the Young's modulus of the second resin layers 22 and 32, the effect of effectively relieving external stress and thermal stress and the noise are suppressed. An effect is obtained. Moreover, what has the structure of this embodiment has the effect | action and effect similar to this embodiment.

10, 10A, 10B, 10C Chip-type electronic component 11 Ceramic element body 12 Side face 13, 14 End face 15 Dielectric body 17, 18 Internal electrode 17L, 18L Lead part 20, 20a, 20b, 20A, 20Aa, 20Ab, 20B, 20C, 30, 30a, 30b, 30A, 30Aa, 30Ab, 30B, 30C Terminal electrode 20G, 30G Baking layer 20S Terminal side surface 20T Terminal end surface 21, 21a, 31, 31a First resin layer 21P, 31P First mixture 22, 22a, 22b, 22c, 22d, 32, 32a, 32b, 32c, 32d Second resin layer 22P, 32P Second mixture 23, 33 Plating layer 24, 34 Third resin layer 41, 41a First conductive material 41A First First conductive particle 41B Second conductive particle 42, 42a, 42b, 42c, 42d Second conductive Fee 42A first particle 42B second particles 42C third particulate 42S coating material 51 first resin 52 second resin

Claims (17)

A ceramic body including a dielectric;
An internal electrode disposed inside the ceramic body and partially exposed on the surface of the ceramic body;
A terminal electrode disposed on the surface of the ceramic body,
The terminal electrode is
A first resin layer including a first conductive material and a first resin and disposed on a surface side where the internal electrode of the ceramic body is exposed;
A chip including a second resin and a second resin layer in contact with at least a part of the first resin layer and having a Young's modulus lower than that of the first resin layer Type electronic components.   2. The chip-type electronic component according to claim 1, wherein the first resin layer covers an exposed portion of the internal electrode and a surface of the ceramic body from which the internal electrode is exposed.   The chip-type electronic component according to claim 1, wherein the second resin layer includes a second conductive material.   3. The chip-type electron according to claim 1, wherein the first conductive material includes first conductive particles and second conductive particles having a particle diameter smaller than that of the first conductive particles. parts.   5. The chip-type electronic component according to claim 4, wherein the first conductive particles have a particle size of 1 μm or more and 10 μm or less, and the second conductive particles have a particle size of 0.1 μm or less.   The chip-type electronic component according to claim 4 or 5, wherein the first conductive particles have a particle size smaller than a thickness of the internal electrode.   The chip-type electronic component according to any one of claims 4 to 6, wherein the first conductive particles have a particle size larger than a thickness of the internal electrode.   The chip-type electronic component according to claim 4, wherein the second resin layer includes particles of a second conductive material.   The average particle diameter of the first conductive particles and the second conductive particles contained in the first resin layer is smaller than the average particle diameter of the particles of the second conductive material. The chip-type electronic component according to 1.   10. The chip-type electronic component according to claim 1, wherein each of the first resin layer and the second resin layer does not contain glass frit.   10. The chip-type electronic component according to claim 3, wherein the first conductive material and the second conductive material contain Cu or Ni.   Furthermore, the chip-type electronic component of any one of Claim 3, 8 or 9 which has a plating layer which covers the surface of the said 2nd resin layer.   The second resin layer covers the surface of the first resin layer leaving a part thereof, and a part of the first resin layer and a part of the plating layer are in contact with each other. The chip-type electronic component described.   10. The chip-type electronic component according to claim 3, wherein the terminal electrode has the second resin layer as an outermost layer, and the second conductive material contains Sn. Preparing a ceramic body having a lead portion with a portion of the internal electrode exposed on the surface;
The first resin layer is formed by applying and curing a first mixture containing a first resin and a first conductive material on the exposed surface of the lead portion and the lead portion of the ceramic body. A first resin layer forming step to be formed;
A second resin layer forming step of forming a second resin layer by applying and curing a second mixture containing a second resin and a second conductive material on the surface of the first resin layer. And including
In the first resin layer forming step and the second resin layer forming step, heat treatment is performed so that the Young's modulus of the second resin layer is smaller than the Young's modulus of the first resin layer. A method for manufacturing a chip-type electronic component.   The time for heating the second mixture in the second resin layer forming step is shorter than the time for heating the first mixture in the first resin layer forming step. Production method.   The chip-type electron according to claim 15 or 16, wherein, in the second resin layer forming step, a temperature at which the second mixture is heated is lower than a temperature at which the first mixture is heated in the first resin layer forming step. Manufacturing method of parts.

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