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JP2012216726A - Semiconductor light-emitting device - Google Patents

Semiconductor light-emitting device Download PDF

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Publication number
JP2012216726A
JP2012216726A JP2011082100A JP2011082100A JP2012216726A JP 2012216726 A JP2012216726 A JP 2012216726A JP 2011082100 A JP2011082100 A JP 2011082100A JP 2011082100 A JP2011082100 A JP 2011082100A JP 2012216726 A JP2012216726 A JP 2012216726A
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circuit board
emitting device
phosphor
light emitting
opening
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JP5697091B2 (en
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Sadato Imai
貞人 今井
Kazuo Funakubo
一夫 舟久保
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Citizen Holdings Co Ltd
Citizen Electronics Co Ltd
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Citizen Holdings Co Ltd
Citizen Electronics Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

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Abstract

PROBLEM TO BE SOLVED: To provide an LED light-emitting device radiating pseudo-white light by using a phosphor containing resin mixed with a blue LED and YAG fluorescent particles, which dissolves yellow ring specific to the LED light-emitting device excellent in heat radiation performance for obtaining bright radiation light with a thin shape and using the phosphor-containing resin for improving luminescent chromaticity.SOLUTION: In a semiconductor light-emitting device including a light-emitting element group mounted on a submount substrate, a circuit board having an opening, and a metal base laminated on an undersurface of the circuit board, the light-emitting element group is provided in the opening of the circuit board and an encapsulation frame is provided on the circuit board to resin encapsulate the light-emitting element group with the phosphor-containing resin. The opening of the circuit board is formed larger than the submount substrate to form a recess part having a predetermined width between an inner edge of the opening of the circuit board and an outer edge of the submount substrate.

Description

本発明は蛍光体含有樹脂を被覆したLED発光装置に関するものであり、詳しくは青色LEDと波長変換粒子を混入した蛍光体含有樹脂とを組み合わせた白色発光装置におけるイエローリングを解消した半導体発光装置に関する。   The present invention relates to an LED light-emitting device coated with a phosphor-containing resin, and more particularly to a semiconductor light-emitting device that eliminates yellowing in a white light-emitting device that combines a blue LED and a phosphor-containing resin mixed with wavelength conversion particles. .

近年、半導体素子であるLED素子は、長寿命で優れた駆動特性を有し、さらに小型で発光効率が良く鮮やかな発光色を有することから、カラー表示装置のバックライトや照明等に広く利用されるようになってきた。   In recent years, LED elements, which are semiconductor elements, have long life and excellent driving characteristics, and are also widely used in backlights and lighting of color display devices because they are small, have high luminous efficiency and have a bright emission color. It has come to be.

特にLED素子と波長変換粒子を混入した蛍光体含有樹脂による白色発光装置として、青色LEDとYAG蛍光体との組み合わせによる白色発光装置が開発されるに至り、これらの白色発光装置として色々な提案がされている(例えば特許文献1、特許文献2)。   In particular, a white light emitting device using a combination of a blue LED and a YAG phosphor has been developed as a white light emitting device using a phosphor-containing resin mixed with an LED element and wavelength conversion particles, and various proposals have been made for these white light emitting devices. (For example, Patent Document 1 and Patent Document 2).

以下、特許文献1における従来のLED発光装置について説明する。図12は、特許文献1におけるLED発光装置の断面図であり、発明の趣旨を逸脱しない範囲において図面の簡素化を行い、部品名称も本発明と同じにしている。図12においてLED発光装置100は複数のLED101を実装したサブマウント基板112を放熱用の金属ベース111に搭載している。そしてサブマウント基板112の周囲には電源供給端子を有する配線電極103が設けられ、サブマウント基板112上で直並列に接続された(図示せず)複数のLED101の端部はワイヤー104によって配線電極103に接続されている。さらにサブマウント基板112上のLED101群及びワイヤー104は蛍光粒子を混入した蛍光体含有樹脂105によって被覆されている。   Hereinafter, a conventional LED light emitting device in Patent Document 1 will be described. FIG. 12 is a cross-sectional view of the LED light emitting device in Patent Document 1, and the drawings are simplified and the part names are the same as those of the present invention without departing from the spirit of the invention. In FIG. 12, the LED light emitting device 100 has a sub-mount substrate 112 on which a plurality of LEDs 101 are mounted mounted on a metal base 111 for heat dissipation. A wiring electrode 103 having a power supply terminal is provided around the submount substrate 112, and ends of a plurality of LEDs 101 connected in series and parallel on the submount substrate 112 (not shown) are wired by wires 104. 103. Further, the LED 101 group and the wire 104 on the submount substrate 112 are covered with a phosphor-containing resin 105 mixed with fluorescent particles.

上記構成におけるLED発光装置100は、LED101として青色LEDを用い、蛍光体含有樹脂105には波長変換部材としてYAG蛍光粒子を混入した蛍光体含有樹脂を事例として説明する。前記LED発光装置100は配線電極103に設けられた電源供給端子に電源を供給すると、青色LED101の青色の放射光とYAGによって波長変換された黄色の放射光との混色による疑似白色光を放射する。   The LED light emitting device 100 having the above-described configuration will be described using a phosphor-containing resin in which a blue LED is used as the LED 101 and YAG fluorescent particles are mixed in the phosphor-containing resin 105 as a wavelength conversion member. When the LED light emitting device 100 supplies power to the power supply terminal provided on the wiring electrode 103, the LED light emitting device 100 emits pseudo white light by mixing the blue radiated light of the blue LED 101 and the yellow radiated light wavelength-converted by YAG. .

図13は、特許文献2におけるLED発光装置の断面図であり、発明の趣旨を逸脱しない範囲において図面の簡素化を行い、部品名称も本発明と同じにしている。図13においてLED発光装置200は2本のリード203a,203bの一方のリード203aにLED201を搭載し、LED201の2個の電極をワイヤー204によって、それぞれ2本のリード203a,203bに接続している。さらにLED201と2本のリード203a,203bの実装部分を透明樹脂206で砲弾形に被覆し、砲弾形の透明樹脂206の表面に一定厚みを有する蛍光体含有樹脂205のキャップで被覆している。   FIG. 13 is a cross-sectional view of the LED light emitting device in Patent Document 2, and the drawings are simplified and the part names are the same as those of the present invention without departing from the spirit of the invention. In FIG. 13, the LED light emitting device 200 has the LED 201 mounted on one of the two leads 203 a and 203 b, and the two electrodes of the LED 201 are connected to the two leads 203 a and 203 b by wires 204, respectively. . Further, the mounting portion of the LED 201 and the two leads 203a and 203b is covered with a transparent resin 206 in a shell shape, and the surface of the shell-like transparent resin 206 is covered with a cap of a phosphor-containing resin 205 having a certain thickness.

LED発光装置200もLED201として青色LEDを用い、蛍光体含有樹脂205には波長変換部材としてYAG蛍光粒子を混入した蛍光体含有樹脂を事例として説明する。前記2本のリード203a,203bの透明樹脂206より突出した部分を電源供給端子とし、この電源供給端子に電源を供給すると、LED発光装置200は青色LED201の青色の放射光とYAGによって波長変換された黄色の放射光との混色による疑似白色光を放射する。   The LED light emitting device 200 also uses a blue LED as the LED 201, and a phosphor-containing resin 205 in which YAG fluorescent particles are mixed as a wavelength conversion member will be described as an example. The portion of the two leads 203a and 203b protruding from the transparent resin 206 is used as a power supply terminal. When power is supplied to the power supply terminal, the LED light emitting device 200 is wavelength-converted by the blue radiated light of the blue LED 201 and YAG. Pseudo white light is emitted by color mixing with bright yellow radiation.

特開2010−170945号公報(図6参照)JP 2010-170945 A (see FIG. 6) 特開平10−200165号公報(図1参照)Japanese Patent Laid-Open No. 10-200185 (see FIG. 1)

上記LEDとして青色LEDを用い、蛍光体含有樹脂には波長変換部材としてYAG蛍光粒子を混入した蛍光体含有樹脂を用いて、青色の放射光とYAGによって波長変換された黄色の放射光との混色による疑似白色光を放射するLED発光装置においては、以下のことが要求されている。
明るい放射光を得るために放熱特性が良く、形状的には薄型化されていること、さらに発光色度を良くするために蛍光体含有樹脂を用いたLED発光装置に特有のイエローリングを解消することである。
Blue LED is used as the LED, and phosphor-containing resin is a phosphor-containing resin in which YAG fluorescent particles are mixed as a wavelength conversion member, and a mixture of blue radiation light and yellow radiation light wavelength-converted by YAG is used. In the LED light-emitting device that emits pseudo white light by the following, the following is required.
It has good heat dissipation characteristics to obtain bright synchrotron radiation, is thin in shape, and eliminates the yellow ring peculiar to LED light emitting devices using phosphor-containing resin to improve emission chromaticity. That is.

このイエローリングの発生理由に付いて図14、図15を用いて説明する。図14は図12に示すLED発光装置100の放射光の状態を示した断面図であり、構成は図12のLED発光装置100と同じなので、重複する説明は省略する。すなわち青色のLED101から上方に出射される出射光Phは矩形形状に被覆された蛍光体含有樹脂105を通過する距離が短いので、青色の放射光とYAGによって波長変換された黄色の放射光との混色が適切に行われ、白色に近い放射光となる。これに対しLED101から斜め横方向に出射される出射光Pyは蛍光体含有樹脂105を通過する距離が長くなるので、YAG蛍光粒子との衝突回数が多くなり、黄色味を帯びた出射光となる。   The reason for the occurrence of this yellow ring will be described with reference to FIGS. FIG. 14 is a cross-sectional view showing the state of the emitted light of the LED light emitting device 100 shown in FIG. 12, and the configuration is the same as that of the LED light emitting device 100 of FIG. That is, since the outgoing light Ph emitted upward from the blue LED 101 has a short distance passing through the phosphor-containing resin 105 coated in a rectangular shape, the blue emitted light and the yellow emitted light wavelength-converted by YAG Color mixing is performed appropriately, and the emitted light is close to white. On the other hand, the outgoing light Py emitted diagonally from the LED 101 has a longer distance to pass through the phosphor-containing resin 105, so that the number of collisions with the YAG fluorescent particles increases, resulting in a yellowish outgoing light. .

この状態を示したのが図15である。すなわち図15は図14における蛍光体含有樹脂105の部分の上面図であり、その中央部分は白色光Phが出射されているが、周辺部分は黄色味を帯びた黄色光Pyがリング状に出射されている。この周辺のリング状の黄色光Pyがイエローリングであり、照明装置としても見難いばかりでなく、カメラのフラッシュに使用する場合には、カラー写真に色変化が生じるため致命傷となる。   FIG. 15 shows this state. That is, FIG. 15 is a top view of the portion of the phosphor-containing resin 105 in FIG. 14. White light Ph is emitted from the central portion, but yellowish yellow light Py is emitted in a ring shape at the peripheral portion. Has been. The ring-shaped yellow light Py around this is a yellow ring, which is not only difficult to see as a lighting device, but also causes a fatal wound when used in a camera flash because color changes occur in a color photograph.

上記疑似白色光を放射するLED発光装置における、3つの条件を考慮すると、図12に示すLED発光装置100は、放熱特性と、薄型化の点についての条件は良いが、イエローリングが発生するという問題がある。また図13に示すLED発光装置200は透明樹脂206の周囲に一定厚さの蛍光体含有樹脂層205が設けられているため、LED201の放射光が全ての方向で、一定厚さの蛍光体含有樹脂層205を通過するため、蛍光体含有樹脂層205を通過する距離が全ての方向で一定の短さとなり、青色の放射光とYAGによって波長変換された黄色の放射光との混色が適切に行われ、白色に近い放射光となり、イエローリングの解消がなされている。しかし形状が砲弾型になっているため、放熱特性や薄型化の点において問題がある。   In consideration of the three conditions in the LED light emitting device that emits pseudo white light, the LED light emitting device 100 shown in FIG. 12 has good heat dissipation characteristics and thinning conditions, but yellow rings are generated. There's a problem. Further, since the LED light emitting device 200 shown in FIG. 13 is provided with the phosphor-containing resin layer 205 having a certain thickness around the transparent resin 206, the emitted light of the LED 201 contains the phosphor having a certain thickness in all directions. Since it passes through the resin layer 205, the distance passing through the phosphor-containing resin layer 205 becomes a certain short length in all directions, and the color mixture of the blue radiation light and the yellow radiation light wavelength-converted by YAG is appropriately It is done, and it becomes the radiation light near white, and the yellow ring is eliminated. However, since the shape is bullet-shaped, there are problems in terms of heat dissipation characteristics and thinning.

本発明の目的は上記問題点を解決しようとするものであり、放熱特性が良く、形状的に薄型化が達成されると同時に、蛍光体含有樹脂を用いたLED発光装置に特有のイエローリングの解消を行ったLED発光装置を提供することである。   The object of the present invention is to solve the above-mentioned problems, and the heat dissipation characteristics are good, the shape is reduced in thickness, and at the same time, the yellow ring specific to the LED light emitting device using the phosphor-containing resin is achieved. It is providing the LED light-emitting device which eliminated.

上記目的を達成するための本発明における構成は、複数の半導体発光素子を、サブマウント基板に実装した発光素子群と、開口を有する回路基板と、概回路基板の下面に積層した金属ベースを備え、前記回路基板の開口内に前記発光素子群を実装したサブマウント基板を配設すると共に、前記回路基板上の開口の外側に封止枠を設けて、前記発光素子群を蛍光粒子を混入した蛍光体含有樹脂で充填封止する半導体発光装置において、前記回路基板の開口を前記サブマウント基板より大きく形成することによって、前記回路基板の開口の内縁と前記サブマウント基板の外縁との間に所定の幅を有する凹部を形成し、前記充填封止された蛍光体含有樹脂に混入された蛍光粒子を前記凹部内に沈殿させることにより、前記発光素子群の斜め横方向の蛍光体の濃度を下げたことを特徴とする。   In order to achieve the above object, a configuration in the present invention includes a light emitting element group in which a plurality of semiconductor light emitting elements are mounted on a submount substrate, a circuit board having an opening, and a metal base laminated on the lower surface of the general circuit board. A submount substrate on which the light emitting element group is mounted is disposed in the opening of the circuit board, and a sealing frame is provided outside the opening on the circuit board, and the light emitting element group is mixed with fluorescent particles. In a semiconductor light emitting device filled and sealed with a phosphor-containing resin, a predetermined opening is formed between an inner edge of the circuit board opening and an outer edge of the submount substrate by forming the opening of the circuit board larger than the submount substrate. Forming a recess having a width of 2 mm, and precipitating the fluorescent particles mixed in the filled and sealed phosphor-containing resin into the recess, thereby causing the light emitting element group to move in the oblique lateral direction. Characterized in that lowering the concentration of the light body.

上記構成によれば、開口を有する回路基板を金属ベースに積層し、前記回路基板の開口内に発光素子群を実装したサブマウント基板を配設すると共に、前記回路基板上の開口の外側に封止枠を設けて、前記発光素子群を蛍光粒子を混入した蛍光体含有樹脂で充填封止する構成において、前記回路基板の開口の内縁と前記サブマウント基板の外縁との間に所定の幅を有する凹部を形成し、前記充填封止された蛍光体含有樹脂に混入された蛍光粒子を前記凹部内に沈殿させることにより、前記発光素子群の斜め横方向の蛍光体の濃度を下げたので、放熱特性が良く、形状的に薄型化が達成されると同時に、蛍光体含有樹脂を用いたLED発光装置に特有のイエローリングの解消を行うことができた。   According to the above configuration, the circuit board having the opening is laminated on the metal base, the submount board on which the light emitting element group is mounted is disposed in the opening of the circuit board, and sealed outside the opening on the circuit board. In a configuration in which a stop frame is provided and the light emitting element group is filled and sealed with a phosphor-containing resin mixed with fluorescent particles, a predetermined width is provided between the inner edge of the opening of the circuit board and the outer edge of the submount substrate. The concentration of the phosphor in the oblique lateral direction of the light-emitting element group is lowered by forming a recess having, and precipitating the fluorescent particles mixed in the filled and sealed phosphor-containing resin in the recess. The heat dissipation characteristics were good and the reduction in shape was achieved, and at the same time, the yellow ring specific to the LED light emitting device using the phosphor-containing resin could be eliminated.

前記サブマウント基板にセラミック基板等の絶縁性基板を使用し、前記絶縁性基板の上面に実装された複数の半導体発光素子をフリップチップボディングすると良い。   An insulating substrate such as a ceramic substrate may be used as the submount substrate, and a plurality of semiconductor light emitting elements mounted on the upper surface of the insulating substrate may be flip-chip bonded.

上記の如く本発明によれば、開口を有する回路基板を金属ベースに積層し、前記回路基板の開口内に発光素子群を実装したサブマウント基板を配設すると共に、前記回路基板上の開口の外側に封止枠を設けて、前記発光素子群を蛍光粒子を混入した蛍光体含有樹脂で充填封止する構成において、前記回路基板の開口の内縁と前記サブマウント基板の外縁との間に所定の幅を有する凹部を形成し、前記充填封止された蛍光体含有樹脂に混入された蛍光粒子を前記凹部内に沈殿させることにより、前記発光素子群の斜め横方向の蛍光粒子の濃度を薄くしたので、放熱特性が良く、形状的に薄型化が達成されると同時に、蛍光体含有樹脂を用いたLED発光装置に特有のイエローリングを解消したLED発光装置を提供できる。   As described above, according to the present invention, the circuit board having the opening is laminated on the metal base, the submount board on which the light emitting element group is mounted is disposed in the opening of the circuit board, and the opening on the circuit board is disposed. In a configuration in which a sealing frame is provided on the outside and the light emitting element group is filled and sealed with a phosphor-containing resin mixed with fluorescent particles, a predetermined interval is provided between the inner edge of the opening of the circuit board and the outer edge of the submount substrate. And reducing the concentration of fluorescent particles in the oblique lateral direction of the light emitting element group by precipitating the fluorescent particles mixed in the filled and sealed phosphor-containing resin into the concave portion. Therefore, it is possible to provide an LED light emitting device that has good heat dissipation characteristics and is thin in shape, and at the same time, eliminates the yellow ring specific to the LED light emitting device using the phosphor-containing resin.

本発明におけるLED発光装置の第1実施形態を示す平面図である。It is a top view which shows 1st Embodiment of the LED light-emitting device in this invention. 図1に示すLED発光装置のA−A断面図である。It is AA sectional drawing of the LED light-emitting device shown in FIG. 図1に示すLED発光装置の金属基板の平面図及びA−A断面図である。It is the top view and AA sectional drawing of the metal substrate of the LED light-emitting device shown in FIG. 図1に示すLED発光装置の回路基板の平面図及びA−A断面図である。It is the top view and AA sectional drawing of the circuit board of the LED light-emitting device shown in FIG. 図4に示す回路基板に、配線電極の一部をのこして反射層を形成し、封止枠を取り付けた状態を示す平面図及びA−A断面図である。FIG. 5 is a plan view and a cross-sectional view taken along line AA showing a state where a part of the wiring electrode is formed on the circuit board shown in FIG. 4 to form a reflective layer and a sealing frame is attached. 図5に示す回路基板の裏面に図3に示す金属板を積層した状態を示す平面図及びA−A断面図である。It is the top view and AA sectional view which show the state which laminated | stacked the metal plate shown in FIG. 3 on the back surface of the circuit board shown in FIG. 図1に示すLRDブロックの拡大平面図及びA−A断面図である。FIG. 2 is an enlarged plan view and an AA cross-sectional view of the LRD block shown in FIG. 1. 図6に示す回路基板に図7に示すLEDブロックを実装した状態を示す平面 図及び各断面図である。It is the top view and each sectional drawing which show the state which mounted the LED block shown in FIG. 7 on the circuit board shown in FIG. 図8(b)に示す完成LED発光装置10の蛍光体含有樹脂5の蛍光粒子5 aが沈殿した状態を示す断面図である。It is sectional drawing which shows the state which the fluorescent particle 5a of the fluorescent substance containing resin 5 of the completion LED light-emitting device 10 shown in FIG.8 (b) precipitated. 図9に示すLED発光装置の点線で示すB部分の拡大断面図である。FIG. 10 is an enlarged cross-sectional view of a portion B indicated by a dotted line of the LED light emitting device shown in FIG. 本発明におけるLED発光装置の第2実施形態を示す断面図である。It is sectional drawing which shows 2nd Embodiment of the LED light-emitting device in this invention. 引用文献1に示す従来のLED発光装置の断面図である。It is sectional drawing of the conventional LED light-emitting device shown in the cited reference 1. 引用文献2に示す従来のLED発光装置の断面図である。It is sectional drawing of the conventional LED light-emitting device shown in the cited reference 2. 図13に示す従来のLED発光装置の発光状態を示す断面図である。It is sectional drawing which shows the light emission state of the conventional LED light-emitting device shown in FIG. 図14に示す蛍光体含有樹脂面の発光状態を示す平面図である。It is a top view which shows the light emission state of the fluorescent substance containing resin surface shown in FIG.

(第1実施形態)
以下図面により、本発明の第1実施形態におけるLED発光装置の構成を説明する。
図1から図10は第1実施形態におけるLED発光装置10の構成を示すものであり、図1はLED発光装置の蛍光体含有樹脂を充填する前の平面図を示し、図2は図1に示すLED発光装置に蛍光体含有樹脂を充填した完成状態におけるA−A断面図である。図1及び図2においてLED発光装置10の構成は後述する如く中心に実装開口2aを有する回路基板2には、実装開口2aの周辺に2個の接続電極3a,3bと、回路基板2の対角位置に2個の端子電極に3c、3dを備えると共に、回路基板2の端子電極3c,3dと逆の対角位置には2個の取付孔16が設けられている。また回路基板2の上面側の接続電極3a,3b、端子電極3c,3dを除く全面には絶縁性の反射層7が形成され、さらに回路基板2の中心に設けられた実装開口2a周辺の接続電極3a,3bの外側に封止枠8が設けられている。
(First embodiment)
The configuration of the LED light-emitting device according to the first embodiment of the present invention will be described below with reference to the drawings.
1 to 10 show the configuration of the LED light emitting device 10 according to the first embodiment. FIG. 1 shows a plan view of the LED light emitting device before filling with a phosphor-containing resin, and FIG. It is AA sectional drawing in the completion state which filled fluorescent substance containing resin in the LED light-emitting device to show. 1 and 2, the configuration of the LED light emitting device 10 is a circuit board 2 having a mounting opening 2a at the center as will be described later, and two connection electrodes 3a and 3b around the mounting opening 2a. Two terminal electrodes 3 c and 3 d are provided at the corner positions, and two mounting holes 16 are provided at diagonal positions opposite to the terminal electrodes 3 c and 3 d of the circuit board 2. An insulating reflective layer 7 is formed on the entire surface of the circuit board 2 except for the connection electrodes 3a and 3b and the terminal electrodes 3c and 3d on the upper surface side. Further, the connection around the mounting opening 2a provided at the center of the circuit board 2 is formed. A sealing frame 8 is provided outside the electrodes 3a and 3b.

また回路基板2の下面には金属ベース11が積層されており、前記回路基板2の実装開口2a内に露出した金属ベース11には、複数のLED1を実装したサブマウント基板12より構成された発光素子群13(以下LEDブロック13とする)が配設されており、サブマウント基板12の対角位置に設けられたサブマウント電極12a、12bが回路基板2に設けられた接続電極3a,3bにワイヤー4によって接続されている。この状態において図1に示す如く回路基板2の実装開口2aをLEDブロック13を構成するサブマウント基板12より十分に大きく形成しておくことにより、前記回路基板2の実装開口2aの内縁と前記サブマウント基板12の外縁との間に所定の幅Wを有する凹部14が形成される。   A metal base 11 is laminated on the lower surface of the circuit board 2, and the metal base 11 exposed in the mounting opening 2 a of the circuit board 2 has a light emission composed of a submount substrate 12 on which a plurality of LEDs 1 are mounted. An element group 13 (hereinafter referred to as an LED block 13) is provided, and submount electrodes 12a and 12b provided at diagonal positions of the submount substrate 12 are connected to connection electrodes 3a and 3b provided on the circuit board 2, respectively. Connected by a wire 4. In this state, as shown in FIG. 1, the mounting opening 2a of the circuit board 2 is formed sufficiently larger than the submount substrate 12 constituting the LED block 13, so that the inner edge of the mounting opening 2a of the circuit board 2 and the sub A recess 14 having a predetermined width W is formed between the outer edge of the mount substrate 12.

次に、前記回路基板2の実装開口2aの外側に設けられた封止枠8の内部に蛍光粒子5a(後述する図10参照)を混入した蛍光体含有樹脂5を充填封止してLED発光装置10が完成する。このとき、回路基板2の実装開口2aの内縁と前記サブマウント基板12の外縁との間に所定の幅Wを有する凹部14が形成されているため、前記充填封止された蛍光体含有樹脂5に混入された蛍光粒子5aが前記凹部14内に沈殿させることにより、梨地模様の濃淡で示す如くLEDブロック13の周囲に高濃度部分5c(濃い梨地で示す)と低濃度部分5d(薄い梨地で示す)の層を形成することができる。この蛍光粒子5aの濃度を下げることの効果については後述する。   Next, the phosphor-containing resin 5 in which fluorescent particles 5a (see FIG. 10 to be described later) are mixed is sealed inside the sealing frame 8 provided outside the mounting opening 2a of the circuit board 2 to emit LED light. The device 10 is completed. At this time, since the recess 14 having a predetermined width W is formed between the inner edge of the mounting opening 2a of the circuit board 2 and the outer edge of the submount substrate 12, the filled and sealed phosphor-containing resin 5 is formed. When the fluorescent particles 5a mixed in are precipitated in the concave portion 14, a high-concentration portion 5c (shown in a dark satin) and a low-concentration portion 5d (in a thin satin finish) are surrounded around the LED block 13 as shown in a shading pattern. Layer) can be formed. The effect of lowering the concentration of the fluorescent particles 5a will be described later.

次の図3〜図8によりLED発光装置10を構成する各エレメント及び組み立て手順を説明する。図3は金属ベース11を示し、(a)は平面図、(b)は(a)に示す金属ベース11のA−A断面図である。金属ベース11は放熱用のベース部材であり、図1のLED発光装置10に示す如く2個の取付孔16を有する金属板である。   Each element and assembly procedure constituting the LED light emitting device 10 will be described with reference to FIGS. FIG. 3 shows the metal base 11, (a) is a plan view, and (b) is an AA cross-sectional view of the metal base 11 shown in (a). The metal base 11 is a base member for heat dissipation, and is a metal plate having two mounting holes 16 as shown in the LED light emitting device 10 of FIG.

図4は回路基板2であり、(a)は平面図、(b)は(a)に示す回路基板2のA−A断面図である。回路基板2はガラスエポキシ等の基板材料に銅箔を張り付けた胴張り樹脂基板であり、中心に実装開口2aが設けられると共に、上面側の銅箔がエッチング加工により2個の接続電極3a,3bと2個の端子電極3c,3dが2本の配線電極3e、3fで接続されている。   4A and 4B are circuit boards 2, in which FIG. 4A is a plan view and FIG. 4B is a cross-sectional view taken along line AA of the circuit board 2 shown in FIG. The circuit board 2 is a trunk-lined resin board in which a copper foil is attached to a substrate material such as glass epoxy, and a mounting opening 2a is provided at the center, and the upper side copper foil is etched to form two connection electrodes 3a and 3b. And two terminal electrodes 3c and 3d are connected by two wiring electrodes 3e and 3f.

図5は回路基板2の途中工程を示すものであり、(a)は平面図、(b)は(a)に示す回路基板2のA−A断面図である。回路基板2の上面側の接続電極3a,3b、端子電極3c,3dを除く全面には絶縁性の反射層7が形成され、さらに回路基板2の中心に設けられた実装開口2a周辺の接続電極3a,3bの外側に封止枠8が設けられている。   5A and 5B show intermediate steps of the circuit board 2, wherein FIG. 5A is a plan view and FIG. 5B is a cross-sectional view taken along line AA of the circuit board 2 shown in FIG. An insulating reflective layer 7 is formed on the entire surface excluding the connection electrodes 3 a and 3 b and the terminal electrodes 3 c and 3 d on the upper surface side of the circuit board 2, and connection electrodes around the mounting opening 2 a provided at the center of the circuit board 2. A sealing frame 8 is provided on the outside of 3a and 3b.

図6は回路基板2と金属ベース11の積層構成を示すもので、(a)は平面図、(b)は(a)に示す回路基板2と金属ベース11の積層体のA−A断面図である。すなわち回路基板2の実装開口2aの部分に積層された金属ベース11の露出面がみえている。   6A and 6B show a laminated structure of the circuit board 2 and the metal base 11, wherein FIG. 6A is a plan view, and FIG. 6B is a cross-sectional view taken along line AA of the laminated body of the circuit board 2 and the metal base 11 shown in FIG. It is. That is, the exposed surface of the metal base 11 stacked on the mounting opening 2a of the circuit board 2 is seen.

図7はLEDブロック13の拡大図を示し、(a)は平面図、(b)は(a)に示LEDブロック13のA−A断面図である。すなわちセラミック等の熱伝導性の良い絶縁材料で構成され、図示しない配線電極を有するサブマウント基板12に複数のLED1がフリップチップ実装によって直並列に接続さらており、電力を供給するための電源電極12a,12bが対角位置のコーナにもうけられている。   FIG. 7 is an enlarged view of the LED block 13, (a) is a plan view, and (b) is an AA cross-sectional view of the LED block 13 shown in (a). That is, a plurality of LEDs 1 are connected in series and parallel by flip-chip mounting to a submount substrate 12 made of an insulating material having good thermal conductivity such as ceramic and having a wiring electrode (not shown), and a power supply electrode for supplying power 12a and 12b are provided at the corners at the diagonal positions.

図8(a)は回路基板2の実装開口2aに露出した金属ベース11の露出面にLEDブロック13を実装した実装回路基板を示す平面図であり、図1に示すLED発光装置10の平面図と同じものであり、ワイヤー4によって回路基板2の接続電極3a,3bとサブマウント基板12の電源電極12a,12bが接続された状態を示している。この回路基板2の接続電極3a,3bとサブマウント基板12の電源電極12a,12bとの接続は、図8に示す如く回路基板2に設けられた円形の実装開口2aの内部に矩形形状のサブマウント基板12を配設し、サブマウント基板12のコーナに電源電極12a,12bが設けられているので、ワイヤー4による回路基板2の接続電極3a,3bとサブマウント基板12の電源電極12a,12bとの接続は最短距離の位置で行われることになる。なお、この状態ではまだ蛍光体含有樹脂5の充填は行われていない。
図8(b)(c)は(a)に示す実装回路基板に蛍光体含有樹脂5の充填を行ったLED発光装置10のA−A断面図及びB−B断面図である。
FIG. 8A is a plan view showing a mounting circuit board in which the LED block 13 is mounted on the exposed surface of the metal base 11 exposed in the mounting opening 2a of the circuit board 2, and is a plan view of the LED light emitting device 10 shown in FIG. The connection electrodes 3 a and 3 b of the circuit board 2 and the power supply electrodes 12 a and 12 b of the submount board 12 are connected by the wire 4. The connection electrodes 3a and 3b of the circuit board 2 and the power supply electrodes 12a and 12b of the submount board 12 are connected to a rectangular sub-opening 2a provided in the circuit board 2 as shown in FIG. Since the mount substrate 12 is disposed and the power supply electrodes 12a and 12b are provided at the corners of the submount substrate 12, the connection electrodes 3a and 3b of the circuit substrate 2 by the wires 4 and the power supply electrodes 12a and 12b of the submount substrate 12 are provided. Is connected at the position of the shortest distance. In this state, the phosphor-containing resin 5 is not yet filled.
8B and 8C are an AA sectional view and a BB sectional view of the LED light emitting device 10 in which the mounting circuit board shown in FIG. 8A is filled with the phosphor-containing resin 5.

図9は図8(b)に示す完成LED発光装置10の蛍光体含有樹脂5の充填を行った後に、蛍光体含有樹脂5が硬化して行く過程において蛍光粒子5aが凹部14内に沈殿した状態を示す断面図であり、回路基板2の実装開口2aに露出した金属ベース11の露出面にLEDブロック13を実装した状態における実装開口2aの内縁と、サブマウント基板12の外縁との間に形成された凹部14内に蛍光粒子5aが沈殿することで、LEDブロック13に実装された発光素子群の斜め横方向の蛍光粒子5aの濃度が下がっていることを梨地模様の濃淡で示している。   In FIG. 9, after the phosphor-containing resin 5 of the completed LED light emitting device 10 shown in FIG. 8B is filled, the phosphor particles 5 a are precipitated in the recesses 14 in the process of curing the phosphor-containing resin 5. FIG. 6 is a cross-sectional view showing a state between the inner edge of the mounting opening 2a and the outer edge of the submount substrate 12 in a state where the LED block 13 is mounted on the exposed surface of the metal base 11 exposed in the mounting opening 2a of the circuit board 2; As the fluorescent particles 5a are precipitated in the formed recesses 14, the concentration of the fluorescent particles 5a in the oblique horizontal direction of the light emitting element group mounted on the LED block 13 is shown by the shading pattern shading. .

図10は図9に示す完成LED発光装置10の部分拡大断面図であり、図9の点線で示したB部分の拡大断面を示している。すなわち封止枠8の内部に充填された蛍光体含有樹脂5の蛍光粒子5aは(黒点で示す)硬化する過程において、全体として沈殿していくが、LED1の周辺の蛍光粒子5aはLED1の近傍に残るに対し、回路基板2の実装開口2aとサブナウント基板12によって構成された凹部14の部分では、凹部14内に蛍光粒子5aが沈殿して高濃度部分5c(濃い梨地で示す)と低濃度部分5d(薄い梨地で示す)の層を形成するので、発光素子群の斜め横方向の蛍光粒子5aの濃度が下がり、LEDブロック13から斜め横方向に出射され出射光もYAG蛍光粒子5aとの衝突の確率が減少することで、LED1から上方に出射される出射光と同様に、青色の放射光とYAG蛍光粒子5aによって波長変換された黄色の放射光との混色が適切に行われ、全体として白色光Phに近い放射光となりイエローリングが解消される。   FIG. 10 is a partial enlarged cross-sectional view of the completed LED light emitting device 10 shown in FIG. 9, and shows an enlarged cross-section of a portion B indicated by a dotted line in FIG. That is, the fluorescent particles 5a of the phosphor-containing resin 5 filled in the sealing frame 8 precipitate as a whole in the process of curing (indicated by black dots), but the fluorescent particles 5a around the LED 1 are in the vicinity of the LED 1 On the other hand, in the concave portion 14 constituted by the mounting opening 2a of the circuit board 2 and the sub-nant substrate 12, the fluorescent particles 5a are precipitated in the concave portion 14 to form a high concentration portion 5c (shown in dark satin) and a low concentration. Since the layer of the portion 5d (shown in thin satin) is formed, the concentration of the fluorescent particles 5a in the oblique horizontal direction of the light emitting element group decreases, and the emitted light is emitted obliquely from the LED block 13 in the oblique horizontal direction. By reducing the probability of collision, the color mixture of the blue radiated light and the yellow radiated light wavelength-converted by the YAG fluorescent particles 5a is appropriate as in the case of the emitted light emitted upward from the LED 1 Performed, yellow ring becomes emitted light close to white light Ph is eliminated as a whole.

(第2実施形態)
図11は本発明におけるLED発光装置の第2実施形態を示す断面図であり、図2に示す第1実施形態のLED発光装置10と基本的構成は同じなので、同一要素には同一番号を付し、重複する説明は省略する。図11に示す第2実施形態のLED発光装置20が第1実施形態のLED発光装置10と異なるところは、以下の点である。
第1実施形態のLED発光装置10のLEDブロック13がサブナウント基板12として絶縁性の基板を使用し、複数のLED1をフリップチップ実装していたのに対し、第2実施形態のLED発光装置20はLEDブロック23のサブナウント基板22として金属性の基板を使用し、複数のLED1をフェースアップに実装すると共に、上面のIC端子をワイヤー24によって接続していることである。このLED発光装置20の構成ではサブナウント基板22を金属で構成し、金属ベース11に密着させているため、LED発光装置20の放熱特性は著しく向上している。
(Second Embodiment)
FIG. 11 is a cross-sectional view showing a second embodiment of the LED light-emitting device according to the present invention. Since the basic configuration is the same as that of the LED light-emitting device 10 of the first embodiment shown in FIG. In addition, overlapping explanation is omitted. The LED light emitting device 20 of the second embodiment shown in FIG. 11 is different from the LED light emitting device 10 of the first embodiment in the following points.
Whereas the LED block 13 of the LED light emitting device 10 of the first embodiment uses an insulating substrate as the sub-nound substrate 12 and a plurality of LEDs 1 are flip-chip mounted, the LED light emitting device 20 of the second embodiment is That is, a metallic substrate is used as the sub-noun substrate 22 of the LED block 23, a plurality of LEDs 1 are mounted face up, and the IC terminals on the upper surface are connected by wires 24. In the configuration of the LED light-emitting device 20, the sub-noun substrate 22 is made of metal and is in close contact with the metal base 11, so that the heat dissipation characteristics of the LED light-emitting device 20 are remarkably improved.

上記の如く、本発明においては回路基板の実装開口とサブマウント基板との間に所定の幅を有する凹部を形成することで、蛍光体含有樹脂封止のLED発光装置に特有なイエローリングを解消することができ、また回路基板の実装開口に露出した金属ベースにLEDブロックを密着させることによって放熱特性の改善を同時に達成することができた。なお、本実施形態においては、回路基板に設けた円形の実装開口に矩形のサブマウント基板を用いたLEDブロックを配設したが、これに限定されるものではなく、例えば円形のサブマウント基板を用いてリング状の凹部を形成しても良い。   As described above, in the present invention, the yellow ring peculiar to the phosphor-containing resin-sealed LED light emitting device is eliminated by forming a recess having a predetermined width between the mounting opening of the circuit board and the submount substrate. In addition, the heat radiation characteristics could be improved at the same time by bringing the LED block into close contact with the metal base exposed in the mounting opening of the circuit board. In this embodiment, the LED block using the rectangular submount substrate is disposed in the circular mounting opening provided in the circuit board. However, the present invention is not limited to this. For example, a circular submount substrate is used. It may be used to form a ring-shaped recess.

1,101,201 LED
2,102,202 回路基板
2a 実装開口
3, 3a,3b,103a,103,203a,203b 接続電極
3c,3d 端子電極
3e,3f,103,203 配線電極
4,24,104,204 ワイヤー
5,105,205 蛍光体含有樹脂
5a 蛍光粒子
5c 高濃度部分
5d 低濃度部分
6,206 透明樹脂
7 反射層
8 封止枠
10,20,100,200 LED発光装置
11,111 金属ベース
12,22,112 サブマウント基板
12a,12b 電源電極
13,23 LEDブロック
14 凹部
16 取付孔
105a 白色光
105b イエローリング
1,101,201 LED
2, 102, 202 Circuit board 2a Mounting opening 3, 3a, 3b, 103a, 103, 203a, 203b Connection electrode 3c, 3d Terminal electrode 3e, 3f, 103, 203 Wiring electrode 4, 24, 104, 204 Wire 5,105 , 205 Phosphor-containing resin 5a Fluorescent particles 5c High concentration portion 5d Low concentration portion 6,206 Transparent resin 7 Reflective layer 8 Sealing frame 10, 20, 100, 200 LED light emitting device 11, 111 Metal base 12, 22, 112 Sub Mount substrate 12a, 12b Power supply electrode 13, 23 LED block 14 Recess 16 Mounting hole
105a white light
105b yellow ring

Claims (5)

複数の半導体発光素子を、サブマウント基板に実装した発光素子群と、開口を有する回路基板と、該回路基板の下面に積層した金属ベースを備え、前記回路基板の開口内に前記発光素子群を実装したサブマウント基板を配設すると共に、前記回路基板上の開口の外側に封止枠を設けて、前記発光素子群を蛍光粒子を混入した蛍光体含有樹脂を充填封止する半導体発光装置において、前記回路基板の開口は円形形状で、前記サブマウント基板は四角形状であり、前記回路基板の開口をサブマウント基板より大きく形成することによって、前記回路基板の開口の内縁と前記サブマウント基板の外縁との間に所定の幅を有する凹部を形成し、前記充填封止された蛍光体含有樹脂に混入された蛍光粒子を前記凹部内に沈殿させることにより、前記発光素子群の斜め横方向の蛍光体の濃度を下げたことを特徴とする半導体発光装置。   A light emitting element group in which a plurality of semiconductor light emitting elements are mounted on a submount substrate, a circuit board having an opening, and a metal base laminated on a lower surface of the circuit board, and the light emitting element group is disposed in the opening of the circuit board. In a semiconductor light emitting device in which a mounted submount substrate is disposed and a sealing frame is provided outside an opening on the circuit board, and the light emitting element group is filled and sealed with a phosphor-containing resin mixed with fluorescent particles The circuit board opening has a circular shape, the submount substrate has a square shape, and the circuit board opening is formed larger than the submount substrate, whereby the inner edge of the circuit board opening and the submount substrate A recess having a predetermined width is formed between the outer edge and the phosphor particles mixed in the filled and sealed phosphor-containing resin are precipitated in the recess to thereby emit the light. The semiconductor light emitting device characterized by having a reduced concentration of oblique lateral phosphor element group. 前記サブマウント基板に絶縁性基板を使用し、前記絶縁性基板の上面に四角形状に並べて実装された複数の半導体発光素子をフリップチップボンディングにて接続した請求項1に記載の半導体発光装置。   The semiconductor light-emitting device according to claim 1, wherein an insulating substrate is used as the submount substrate, and a plurality of semiconductor light-emitting elements mounted in a square shape on the upper surface of the insulating substrate are connected by flip-chip bonding. 前記絶縁性基板がセラミック基板である請求項2に記載の半導体発光装置。   The semiconductor light-emitting device according to claim 2, wherein the insulating substrate is a ceramic substrate. 前記サブマウント基板に金属基板を使用し、前記金属基板の上面に四角形状に並べて実装された複数の半導体発光素子をワイヤーボンディングにて接続した請求項1に記載の半導体発光装置。   The semiconductor light-emitting device according to claim 1, wherein a metal substrate is used as the submount substrate, and a plurality of semiconductor light-emitting elements mounted in a square shape on the upper surface of the metal substrate are connected by wire bonding. 前記回路基板の上面に反射層を形成した請求項1から4のいずれかに記載の半導体発光装置。
The semiconductor light emitting device according to claim 1, wherein a reflective layer is formed on an upper surface of the circuit board.
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014192407A (en) * 2013-03-28 2014-10-06 Citizen Electronics Co Ltd Semiconductor light-emitting device
JP2015065431A (en) * 2013-08-30 2015-04-09 日亜化学工業株式会社 Substrate for mounting light emitting element and fixing method of the same
JP2015079917A (en) * 2013-10-18 2015-04-23 スタンレー電気株式会社 Semiconductor light emitting device
JP2015128139A (en) * 2013-11-29 2015-07-09 日亜化学工業株式会社 Light emitting device and lighting device
JP2017085096A (en) * 2015-10-23 2017-05-18 シチズン電子株式会社 Light-emitting module
JP2017120897A (en) * 2015-12-25 2017-07-06 シチズン電子株式会社 Light-emitting apparatus and color-matching apparatus

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007295007A (en) * 2005-09-20 2007-11-08 Matsushita Electric Works Ltd Led lighting equipment
JP2008218511A (en) * 2007-02-28 2008-09-18 Toyoda Gosei Co Ltd Semiconductor light emitting device and method formanufacturing the same
WO2012029695A1 (en) * 2010-08-31 2012-03-08 日亜化学工業株式会社 Light emitting device and method for manufacturing same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007295007A (en) * 2005-09-20 2007-11-08 Matsushita Electric Works Ltd Led lighting equipment
JP2008218511A (en) * 2007-02-28 2008-09-18 Toyoda Gosei Co Ltd Semiconductor light emitting device and method formanufacturing the same
WO2012029695A1 (en) * 2010-08-31 2012-03-08 日亜化学工業株式会社 Light emitting device and method for manufacturing same

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014192407A (en) * 2013-03-28 2014-10-06 Citizen Electronics Co Ltd Semiconductor light-emitting device
JP2015065431A (en) * 2013-08-30 2015-04-09 日亜化学工業株式会社 Substrate for mounting light emitting element and fixing method of the same
JP2015079917A (en) * 2013-10-18 2015-04-23 スタンレー電気株式会社 Semiconductor light emitting device
US10014453B2 (en) 2013-10-18 2018-07-03 Stanley Electric Co., Ltd. Semiconductor light-emitting device emitting light mixtures with substantially white tone
JP2015128139A (en) * 2013-11-29 2015-07-09 日亜化学工業株式会社 Light emitting device and lighting device
JP2017085096A (en) * 2015-10-23 2017-05-18 シチズン電子株式会社 Light-emitting module
JP2017120897A (en) * 2015-12-25 2017-07-06 シチズン電子株式会社 Light-emitting apparatus and color-matching apparatus

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