JP2010034305A5 - - Google Patents
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- Publication number
- JP2010034305A5 JP2010034305A5 JP2008195061A JP2008195061A JP2010034305A5 JP 2010034305 A5 JP2010034305 A5 JP 2010034305A5 JP 2008195061 A JP2008195061 A JP 2008195061A JP 2008195061 A JP2008195061 A JP 2008195061A JP 2010034305 A5 JP2010034305 A5 JP 2010034305A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008195061A JP5281842B2 (ja) | 2008-07-29 | 2008-07-29 | 半導体レーザ装置 |
| US12/501,778 US8000365B2 (en) | 2008-07-29 | 2009-07-13 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008195061A JP5281842B2 (ja) | 2008-07-29 | 2008-07-29 | 半導体レーザ装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010034305A JP2010034305A (ja) | 2010-02-12 |
| JP2010034305A5 true JP2010034305A5 (ja) | 2011-04-14 |
| JP5281842B2 JP5281842B2 (ja) | 2013-09-04 |
Family
ID=41608310
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008195061A Expired - Fee Related JP5281842B2 (ja) | 2008-07-29 | 2008-07-29 | 半導体レーザ装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8000365B2 (ja) |
| JP (1) | JP5281842B2 (ja) |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5585957A (en) | 1993-03-25 | 1996-12-17 | Nippon Telegraph And Telephone Corporation | Method for producing various semiconductor optical devices of differing optical characteristics |
| JPH10256652A (ja) * | 1997-03-17 | 1998-09-25 | Mitsubishi Electric Corp | 活性層吸収型パルセーション半導体レーザダイオードとその製造方法 |
| US6522676B1 (en) | 1999-01-26 | 2003-02-18 | Sanyo Electric Co., Ltd | Nitride semiconductor laser device |
| JP2000286504A (ja) | 1999-01-26 | 2000-10-13 | Sanyo Electric Co Ltd | 窒化物半導体レーザ素子 |
| JP3697406B2 (ja) * | 2001-09-26 | 2005-09-21 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
| JP2003133642A (ja) | 2001-10-19 | 2003-05-09 | Hitachi Ltd | 半導体レーザ素子及び光電子装置 |
| JP2003198057A (ja) * | 2001-12-27 | 2003-07-11 | Sony Corp | 半導体レーザ素子及びその製造方法 |
| JP4540347B2 (ja) * | 2004-01-05 | 2010-09-08 | シャープ株式会社 | 窒化物半導体レーザ素子及び、その製造方法 |
| WO2006106886A1 (ja) | 2005-03-30 | 2006-10-12 | Optoenergy, Inc. | 半導体レーザ素子 |
| JPWO2009057254A1 (ja) * | 2007-11-02 | 2011-03-10 | パナソニック株式会社 | 半導体レーザ装置 |
| JP4582210B2 (ja) * | 2008-06-20 | 2010-11-17 | ソニー株式会社 | 半導体レーザ、半導体レーザの製造方法、光ディスク装置および光ピックアップ |
-
2008
- 2008-07-29 JP JP2008195061A patent/JP5281842B2/ja not_active Expired - Fee Related
-
2009
- 2009-07-13 US US12/501,778 patent/US8000365B2/en not_active Expired - Fee Related